WO2005098091A3 - A method of plasma etch endpoint detection using a v-i probe diagnostics - Google Patents

A method of plasma etch endpoint detection using a v-i probe diagnostics Download PDF

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Publication number
WO2005098091A3
WO2005098091A3 PCT/US2005/011214 US2005011214W WO2005098091A3 WO 2005098091 A3 WO2005098091 A3 WO 2005098091A3 US 2005011214 W US2005011214 W US 2005011214W WO 2005098091 A3 WO2005098091 A3 WO 2005098091A3
Authority
WO
WIPO (PCT)
Prior art keywords
plasma processing
electrical parameters
probe
mhz
endpoint detection
Prior art date
Application number
PCT/US2005/011214
Other languages
French (fr)
Other versions
WO2005098091A2 (en
WO2005098091B1 (en
Inventor
Armen Avoyan
Francois Chandrasekar Dassapa
Brian Mcmillin
Original Assignee
Lam Res Corp
Armen Avoyan
Francois Chandrasekar Dassapa
Brian Mcmillin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp, Armen Avoyan, Francois Chandrasekar Dassapa, Brian Mcmillin filed Critical Lam Res Corp
Priority to JP2007506334A priority Critical patent/JP2007531999A/en
Publication of WO2005098091A2 publication Critical patent/WO2005098091A2/en
Publication of WO2005098091A3 publication Critical patent/WO2005098091A3/en
Publication of WO2005098091B1 publication Critical patent/WO2005098091B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)

Abstract

A plasma processing control system including a V-I probe for effectively monitoring a plasma processing chamber, where the probe can provide electrical parameters in response to a radio frequency (RF) supply (e.g., about 2 MHz, about 27 MHz, or about 60 MHz), a processor coupled to and/or included with a commercially available probe product that can provide harmonics for each of the electrical parameters, and a controller coupled to the processor that can select one of the electrical parameters and one of the associated harmonics for endpoint detection for a plasma processing step is disclosed. The electrical parameters can include voltage, phase, and current and the plasma processing application can be dielectric etching. A system according to embodiments of the invention may be particularly suited for dielectric etching in a production environment.
PCT/US2005/011214 2004-03-30 2005-03-30 A method of plasma etch endpoint detection using a v-i probe diagnostics WO2005098091A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007506334A JP2007531999A (en) 2004-03-30 2005-03-30 Plasma etch endpoint detection method using VI probe diagnostic method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/813,829 2004-03-30
US10/813,829 US20050217795A1 (en) 2004-03-30 2004-03-30 Method of plasma etch endpoint detection using a V-I probe diagnostics

Publications (3)

Publication Number Publication Date
WO2005098091A2 WO2005098091A2 (en) 2005-10-20
WO2005098091A3 true WO2005098091A3 (en) 2007-03-15
WO2005098091B1 WO2005098091B1 (en) 2007-04-26

Family

ID=35052981

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/011214 WO2005098091A2 (en) 2004-03-30 2005-03-30 A method of plasma etch endpoint detection using a v-i probe diagnostics

Country Status (6)

Country Link
US (1) US20050217795A1 (en)
JP (1) JP2007531999A (en)
KR (1) KR20070020226A (en)
CN (1) CN1998069A (en)
TW (1) TW200610051A (en)
WO (1) WO2005098091A2 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100937164B1 (en) * 2007-12-20 2010-01-15 정진욱 Process monitoring apparatus and the method of the same
JP5643198B2 (en) * 2008-07-07 2014-12-17 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ RF bias capacitively coupled electrostatic (RFB-CCE) probe configuration for characterizing a film in a plasma processing chamber, method associated therewith, and program storage medium storing code for performing the method
US8440061B2 (en) * 2009-07-20 2013-05-14 Lam Research Corporation System and method for plasma arc detection, isolation and prevention
TWI531023B (en) * 2009-11-19 2016-04-21 蘭姆研究公司 Methods and apparatus for controlling a plasma processing system
CN102209425B (en) * 2011-01-08 2012-07-18 大连理工大学 Radio frequency discharge plasma diagnostic device
US9197196B2 (en) * 2012-02-22 2015-11-24 Lam Research Corporation State-based adjustment of power and frequency
US10297433B2 (en) * 2016-07-05 2019-05-21 Bruker Daltonik Gmbh Suppressing harmonic signals in ion cyclotron resonance mass spectrometry
US10269545B2 (en) * 2016-08-03 2019-04-23 Lam Research Corporation Methods for monitoring plasma processing systems for advanced process and tool control
US10395896B2 (en) 2017-03-03 2019-08-27 Applied Materials, Inc. Method and apparatus for ion energy distribution manipulation for plasma processing chambers that allows ion energy boosting through amplitude modulation
JP2022545774A (en) 2019-08-19 2022-10-31 アプライド マテリアルズ インコーポレイテッド Method and apparatus for controlling RF parameters at multiple frequencies
CN114063479B (en) * 2021-11-12 2024-01-23 华科电子股份有限公司 Radio frequency power supply control method and system applied to multi-output module of etching machine
WO2024019020A1 (en) * 2022-07-21 2024-01-25 東京エレクトロン株式会社 Plasma processing device and endpoint detection method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5576629A (en) * 1994-10-24 1996-11-19 Fourth State Technology, Inc. Plasma monitoring and control method and system

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US1538538A (en) * 1924-04-28 1925-05-19 Wood Marie Elizabeth Pad for children's chairs
US2254466A (en) * 1938-04-15 1941-09-02 Albert Lisa High-chair pad
US2652183A (en) * 1950-06-15 1953-09-15 Hlivka Bernice Baby holder for children's chairs
US3578380A (en) * 1969-03-07 1971-05-11 Rosalind R Jacobus Sanitary cover for shopping cart seat
US4659143A (en) * 1986-01-27 1987-04-21 Maclennan Diane Food catcher for attaching to table
US4848834A (en) * 1989-01-24 1989-07-18 Ron Linski Infant food catch
US5121938A (en) * 1991-03-04 1992-06-16 Invacare Corporation Slip covers for wheelchairs
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Patent Citations (1)

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US5576629A (en) * 1994-10-24 1996-11-19 Fourth State Technology, Inc. Plasma monitoring and control method and system

Also Published As

Publication number Publication date
KR20070020226A (en) 2007-02-20
US20050217795A1 (en) 2005-10-06
JP2007531999A (en) 2007-11-08
WO2005098091A2 (en) 2005-10-20
WO2005098091B1 (en) 2007-04-26
CN1998069A (en) 2007-07-11
TW200610051A (en) 2006-03-16

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