JP2008514027A - 透過性シリコーン及び蛍光体を含むパターニング可能な皮膜を備える半導体発光デバイス、およびその製造方法 - Google Patents

透過性シリコーン及び蛍光体を含むパターニング可能な皮膜を備える半導体発光デバイス、およびその製造方法 Download PDF

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JP2008514027A
JP2008514027A JP2007533460A JP2007533460A JP2008514027A JP 2008514027 A JP2008514027 A JP 2008514027A JP 2007533460 A JP2007533460 A JP 2007533460A JP 2007533460 A JP2007533460 A JP 2007533460A JP 2008514027 A JP2008514027 A JP 2008514027A
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light emitting
phosphor
semiconductor light
emitting device
film
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JP2008514027A5 (https=
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エイチ．ネグリー ジェラルド
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Wolfspeed Inc
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Cree Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
JP2007533460A 2004-09-23 2005-07-05 透過性シリコーン及び蛍光体を含むパターニング可能な皮膜を備える半導体発光デバイス、およびその製造方法 Pending JP2008514027A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/947,704 US7372198B2 (en) 2004-09-23 2004-09-23 Semiconductor light emitting devices including patternable films comprising transparent silicone and phosphor
PCT/US2005/023874 WO2006036251A1 (en) 2004-09-23 2005-07-05 Semiconductor light emitting devices including patternable films comprising transparent silicone and phosphor, and methods of manufacturing same

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JP2008514027A true JP2008514027A (ja) 2008-05-01
JP2008514027A5 JP2008514027A5 (https=) 2011-12-22

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US (2) US7372198B2 (https=)
EP (1) EP1794810B1 (https=)
JP (1) JP2008514027A (https=)
KR (1) KR20070053782A (https=)
CN (1) CN100539213C (https=)
TW (1) TWI377694B (https=)
WO (1) WO2006036251A1 (https=)

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US8258528B2 (en) 2008-06-25 2012-09-04 Stanley Electric Co., Ltd. Semiconductor light-emitting device
KR101181415B1 (ko) * 2009-09-15 2012-09-19 (주)라이타이저코리아 발광다이오드 및 그 제조방법
JP2013140965A (ja) * 2011-12-28 2013-07-18 Led Engin Inc ステンシル印刷によるダイ上部への蛍光体の堆積

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US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US20110195583A1 (en) * 2010-02-11 2011-08-11 Koninklijke Philips Electronics N.V. Wavelength converting layer for a light emitting device
CN102714263B (zh) * 2010-02-25 2015-11-25 韩国莱太柘晶电株式会社 发光二极管及其制造方法
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Also Published As

Publication number Publication date
WO2006036251A1 (en) 2006-04-06
CN100539213C (zh) 2009-09-09
US7591702B2 (en) 2009-09-22
EP1794810B1 (en) 2019-03-13
EP1794810A1 (en) 2007-06-13
US7372198B2 (en) 2008-05-13
KR20070053782A (ko) 2007-05-25
CN101027785A (zh) 2007-08-29
TW200625680A (en) 2006-07-16
US20060061259A1 (en) 2006-03-23
TWI377694B (en) 2012-11-21
US20080076316A1 (en) 2008-03-27

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