JP2008502156A - 接触抵抗が低減された半導体デバイス - Google Patents
接触抵抗が低減された半導体デバイス Download PDFInfo
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Abstract
【解決手段】 第1の導電性の材料から構成され、表面に電極を有する半導体ダイと、前記第1の導電性の材料の抵抗率よりも低い抵抗率を有する第2の材料から構成され、前記電極の上に設けられた導電性本体とを備える半導体デバイスと、第1の導電性の材料から構成された、半導体デバイスの電極の表面にバリア層を形成するステップと、前記第1の材料の電気抵抗率よりも電気抵抗率が低い第2の導電性の材料から構成されたシード層を、前記バリア層の上に形成するステップと、前記第2の材料から構成された前記シード層の上に導電製本体を形成するステップとを有する、半導体デバイスを製造するための方法に関する。
【選択図】図3
Description
−最小220μmの間隙
−最も近いAlの特徴部に対する最小50μmの間隙
ソース上の特徴部の面積:2×4.34mm2
ゲート上の特徴部の面積:0.77mm2
−最小300μmの間隙
−最も近いAlの特徴部に対する最小50μmの間隙
ソース上の特徴部の面積:2×3.80mm2
ゲート上の特徴部の面積:0.77mm2
−パッシベーション開口部と同一
ソース上の特徴部の面積:2×1.75mm2
ゲート上の特徴部の面積:0.71mm2
12 パワー電極
14 制御電極
16 第2パワー電極
18 バリア層
20 導電性本体
22 ハンダ付け可能な本体
24 パッシベーション本体
26 開口部
28 カン
30 接着層
32 接続表面
34 導電性パッド
36 基板
100 パワー電極
102 ウェーハ
104 制御電極
106 バリア層
108 シード層
110 フォトレジスト層
112 開口部
Claims (25)
- 第1の導電性の材料から構成され、表面に電極を有する半導体ダイと、
前記第1の導電性の材料の抵抗率よりも低い抵抗率を有する第2の材料から構成され、前記電極の上に設けられた導電性本体とを備える半導体デバイス。 - 前記電極は、アルミニウムから構成されている、請求項1記載のデバイス。
- 前記電極と前記導電性デバイスとの間に挟持されたバリア層を含む、請求項1記載のデバイス。
- 前記バリア層は、チタンから構成されている、請求項3記載のデバイス。
- 前記導電製本体は、少なくとも約10〜約25ミクロンの厚さである、請求項1記載のデバイス。
- 前記半導体デバイスは、パワー半導体デバイスであり、前記電極は、前記パワー半導体デバイスのパワー電極である、請求項1記載のデバイス。
- 前記半導体デバイスは、パワー半導体デバイスであり、前記電極は、前記パワー半導体デバイスの制御電極である、請求項1記載のデバイス。
- 前記半導体デバイスは、パワーMOSFETであり、前記電極は、前記パワーMOSFETのソース電極である、請求項1記載のデバイス。
- 前記半導体デバイスは、パワーMOSFETであり、前記電極は、前記パワーMOSFETのゲート電極である、請求項1記載のデバイス。
- 前記導電製本体の上に設けられたハンダ付け可能な本体を更に含む、請求項1記載のデバイス。
- 前記ハンダ付け可能な本体は、前記銅の本体の上に設けられたニッケル層と、前記ニッケル層の上に設けられた鉛スズ層とから構成されている、請求項10記載のデバイス。
- 前記ハンダ付け可能な本体は、NiAgまたはNiAuのいずれかから構成されている、請求項10記載のデバイス。
- 前記ハンダ付け可能な本体の上に形成された、少なくとも1つの開口部を有するパッシベーション本体を更に含む、請求項10記載のデバイス。
- 前記電極と反対の表面に配置された別の電極を更に備え、この別の電極は、導電性カンの内側表面に、電気的かつ機械的に接続されている、請求項1記載のデバイス。
- 前記電極と反対の表面に配置された別の電極を更に備え、この別の電極は、リードフレームの導電性パッドまたは基板のいずれかに、電気的かつ機械的に取り付けられている、請求項1記載のデバイス。
- 第1の導電性の材料から構成された、半導体デバイスの電極の表面にバリア層を形成するステップと、
前記第1の材料の電気抵抗率よりも電気抵抗率が低い第2の導電性の材料から構成されたシード層を、前記バリア層の上に形成するステップと、
前記第2の材料から構成された前記シード層の上に導電製本体を形成するステップとを有する、半導体デバイスを製造するための方法。 - 前記電極を、アルミから構成する、請求項16記載の方法。
- 前記バリア層を、チタンから構成する、請求項16記載の方法。
- 前記第2の材料を、銅から構成する、請求項10記載の方法。
- 前記導電製本体は、少なくとも約10〜約25ミクロンの厚さである、請求項19記載の方法。
- 前記半導体デバイスは、パワー半導体デバイスであり、前記電極は、前記パワー半導体デバイスのパワー電極である、請求項16記載の方法。
- 前記半導体デバイスは、パワー半導体デバイスであり、前記電極は、前記パワー半導体デバイスの制御電極である、請求項16記載の方法。
- メッキにより、前記導電製本体を形成する、請求項16記載の方法。
- 電気メッキにより、前記導電製本体を形成する、請求項17記載の方法。
- 無電解メッキにより、前記導電製本体を形成する、請求項17記載の方法。
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US11/144,483 US7678680B2 (en) | 2004-06-03 | 2005-06-02 | Semiconductor device with reduced contact resistance |
PCT/US2005/019439 WO2005122236A2 (en) | 2004-06-03 | 2005-06-03 | Semiconductor device with reduced contact resistance |
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US20050272257A1 (en) | 2005-12-08 |
WO2005122236A2 (en) | 2005-12-22 |
DE112005001296B4 (de) | 2012-08-16 |
US7678680B2 (en) | 2010-03-16 |
US20060049514A1 (en) | 2006-03-09 |
DE112005001296T5 (de) | 2007-04-26 |
WO2005122236A3 (en) | 2007-05-10 |
US7382051B2 (en) | 2008-06-03 |
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