JP2008502147A5 - - Google Patents
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- Publication number
- JP2008502147A5 JP2008502147A5 JP2007515460A JP2007515460A JP2008502147A5 JP 2008502147 A5 JP2008502147 A5 JP 2008502147A5 JP 2007515460 A JP2007515460 A JP 2007515460A JP 2007515460 A JP2007515460 A JP 2007515460A JP 2008502147 A5 JP2008502147 A5 JP 2008502147A5
- Authority
- JP
- Japan
- Prior art keywords
- tantalum
- chamber
- protective layer
- substrate
- evacuating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 13
- 229910052715 tantalum Inorganic materials 0.000 claims 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 6
- 239000002243 precursor Substances 0.000 claims 6
- 239000011241 protective layer Substances 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- 238000009792 diffusion process Methods 0.000 claims 4
- 239000000463 material Substances 0.000 claims 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 4
- 230000004888 barrier function Effects 0.000 claims 3
- 229910052757 nitrogen Inorganic materials 0.000 claims 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 239000012159 carrier gas Substances 0.000 claims 2
- 239000010410 layer Substances 0.000 claims 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910004529 TaF 5 Inorganic materials 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 238000000231 atomic layer deposition Methods 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- YRGLXIVYESZPLQ-UHFFFAOYSA-I tantalum pentafluoride Chemical compound F[Ta](F)(F)(F)F YRGLXIVYESZPLQ-UHFFFAOYSA-I 0.000 claims 1
- MISXNQITXACHNJ-UHFFFAOYSA-I tantalum(5+);pentaiodide Chemical compound [I-].[I-].[I-].[I-].[I-].[Ta+5] MISXNQITXACHNJ-UHFFFAOYSA-I 0.000 claims 1
- GCPVYIPZZUPXPB-UHFFFAOYSA-I tantalum(v) bromide Chemical compound Br[Ta](Br)(Br)(Br)Br GCPVYIPZZUPXPB-UHFFFAOYSA-I 0.000 claims 1
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical group Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/709,865 US7211507B2 (en) | 2004-06-02 | 2004-06-02 | PE-ALD of TaN diffusion barrier region on low-k materials |
| US10/709,865 | 2004-06-02 | ||
| PCT/US2005/018953 WO2005122253A2 (en) | 2004-06-02 | 2005-05-31 | PE-ALD OF TaN DIFFUSION BARRIER REGION ON LOW-K MATERIALS |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008502147A JP2008502147A (ja) | 2008-01-24 |
| JP2008502147A5 true JP2008502147A5 (https=) | 2008-05-15 |
| JP4791456B2 JP4791456B2 (ja) | 2011-10-12 |
Family
ID=35446788
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007515460A Expired - Fee Related JP4791456B2 (ja) | 2004-06-02 | 2005-05-31 | 低ｋ材料上にＴａＮ拡散バリア領域を堆積する方法（低ｋ材料上のＴａＮ拡散バリア領域のＰＥ−ＡＬＤ） |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7211507B2 (https=) |
| EP (1) | EP1756856B1 (https=) |
| JP (1) | JP4791456B2 (https=) |
| CN (1) | CN100447955C (https=) |
| TW (1) | TWI345273B (https=) |
| WO (1) | WO2005122253A2 (https=) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050183740A1 (en) * | 2004-02-19 | 2005-08-25 | Fulton John L. | Process and apparatus for removing residues from semiconductor substrates |
| US7211507B2 (en) * | 2004-06-02 | 2007-05-01 | International Business Machines Corporation | PE-ALD of TaN diffusion barrier region on low-k materials |
| KR100552820B1 (ko) * | 2004-09-17 | 2006-02-21 | 동부아남반도체 주식회사 | 반도체 소자의 제조 방법 |
| US7482289B2 (en) * | 2006-08-25 | 2009-01-27 | Battelle Memorial Institute | Methods and apparatus for depositing tantalum metal films to surfaces and substrates |
| US7595270B2 (en) * | 2007-01-26 | 2009-09-29 | Asm America, Inc. | Passivated stoichiometric metal nitride films |
| US7598170B2 (en) * | 2007-01-26 | 2009-10-06 | Asm America, Inc. | Plasma-enhanced ALD of tantalum nitride films |
| JP5358893B2 (ja) * | 2007-04-03 | 2013-12-04 | 三菱電機株式会社 | トランジスタ |
| DE602007013386D1 (de) * | 2007-07-17 | 2011-05-05 | St Microelectronics Srl | Verfahren zur Herstellung eines kupferkompatiblen Phasenwechselspeicherelements und entsprechendes Phasenwechselspeicherelement |
| KR101540077B1 (ko) * | 2008-04-16 | 2015-07-28 | 에이에스엠 아메리카, 인코포레이티드 | 알루미늄 탄화수소 화합물들을 이용한 금속 카바이드 막들의 원자층 증착법 |
| US20100055442A1 (en) * | 2008-09-03 | 2010-03-04 | International Business Machines Corporation | METHOD OF PE-ALD OF SiNxCy AND INTEGRATION OF LINER MATERIALS ON POROUS LOW K SUBSTRATES |
| CN101740369B (zh) * | 2008-11-19 | 2011-12-07 | 中国科学院微电子研究所 | 一种制备金属性金属氮化物薄膜的方法 |
| US9177826B2 (en) * | 2012-02-02 | 2015-11-03 | Globalfoundries Inc. | Methods of forming metal nitride materials |
| US8736056B2 (en) | 2012-07-31 | 2014-05-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Device for reducing contact resistance of a metal |
| US8962473B2 (en) | 2013-03-15 | 2015-02-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of forming hybrid diffusion barrier layer and semiconductor device thereof |
| CN104109844B (zh) * | 2013-04-18 | 2016-07-06 | 中芯国际集成电路制造(上海)有限公司 | 一种基于原子层沉积技术的氮化钽薄膜的制作工艺 |
| KR102216575B1 (ko) | 2014-10-23 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | 티타늄 알루미늄 및 탄탈륨 알루미늄 박막들 |
| CN106086809B (zh) * | 2016-06-17 | 2018-08-17 | 艾因斯（北京）钽应用科技有限公司 | 一种制备耐腐耐磨钽复合涂层的方法 |
| US10008558B1 (en) * | 2017-01-05 | 2018-06-26 | International Business Machines Corporation | Advanced metal insulator metal capacitor |
| US10032855B1 (en) | 2017-01-05 | 2018-07-24 | International Business Machines Corporation | Advanced metal insulator metal capacitor |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2359825A (en) * | 1998-11-12 | 2001-09-05 | Applied Materials Inc | Improved tantalum-containing barrier layers for copper using high purity tantalum targets for sputtering |
| US6482733B2 (en) * | 2000-05-15 | 2002-11-19 | Asm Microchemistry Oy | Protective layers prior to alternating layer deposition |
| EP1292970B1 (en) * | 2000-06-08 | 2011-09-28 | Genitech Inc. | Thin film forming method |
| KR100386034B1 (ko) * | 2000-12-06 | 2003-06-02 | 에이에스엠 마이크로케미스트리 리미티드 | 확산 방지막의 결정립계를 금속산화물로 충진한 구리 배선구조의 반도체 소자 제조 방법 |
| US6428859B1 (en) * | 2000-12-06 | 2002-08-06 | Angstron Systems, Inc. | Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |
| US20020117399A1 (en) * | 2001-02-23 | 2002-08-29 | Applied Materials, Inc. | Atomically thin highly resistive barrier layer in a copper via |
| US6916398B2 (en) * | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
| US6972267B2 (en) * | 2002-03-04 | 2005-12-06 | Applied Materials, Inc. | Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor |
| US20040071878A1 (en) * | 2002-08-15 | 2004-04-15 | Interuniversitair Microelektronica Centrum (Imec Vzw) | Surface preparation using plasma for ALD Films |
| JP3935428B2 (ja) * | 2002-12-27 | 2007-06-20 | 東京エレクトロン株式会社 | 成膜方法および成膜装置 |
| US20040175926A1 (en) * | 2003-03-07 | 2004-09-09 | Advanced Micro Devices, Inc. | Method for manufacturing a semiconductor component having a barrier-lined opening |
| KR100674279B1 (ko) * | 2003-03-25 | 2007-01-24 | 동경 엘렉트론 주식회사 | 처리장치 및 처리방법 |
| JP2004311545A (ja) * | 2003-04-03 | 2004-11-04 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法及び高融点金属膜の堆積装置 |
| US7186446B2 (en) * | 2003-10-31 | 2007-03-06 | International Business Machines Corporation | Plasma enhanced ALD of tantalum nitride and bilayer |
| JP2005191290A (ja) * | 2003-12-25 | 2005-07-14 | Semiconductor Leading Edge Technologies Inc | 半導体装置の製造方法 |
| US7211507B2 (en) * | 2004-06-02 | 2007-05-01 | International Business Machines Corporation | PE-ALD of TaN diffusion barrier region on low-k materials |
| JP2006128542A (ja) * | 2004-11-01 | 2006-05-18 | Nec Electronics Corp | 電子デバイスの製造方法 |
-
2004
- 2004-06-02 US US10/709,865 patent/US7211507B2/en not_active Expired - Lifetime
-
2005
- 2005-05-30 TW TW094117722A patent/TWI345273B/zh not_active IP Right Cessation
- 2005-05-31 JP JP2007515460A patent/JP4791456B2/ja not_active Expired - Fee Related
- 2005-05-31 EP EP05755089.9A patent/EP1756856B1/en not_active Expired - Lifetime
- 2005-05-31 WO PCT/US2005/018953 patent/WO2005122253A2/en not_active Ceased
- 2005-05-31 CN CNB2005800180516A patent/CN100447955C/zh not_active Expired - Lifetime
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