JP4791456B2 - 低ｋ材料上にＴａＮ拡散バリア領域を堆積する方法（低ｋ材料上のＴａＮ拡散バリア領域のＰＥ−ＡＬＤ） - Google Patents

低ｋ材料上にＴａＮ拡散バリア領域を堆積する方法（低ｋ材料上のＴａＮ拡散バリア領域のＰＥ−ＡＬＤ） Download PDF

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JP4791456B2
JP4791456B2 JP2007515460A JP2007515460A JP4791456B2 JP 4791456 B2 JP4791456 B2 JP 4791456B2 JP 2007515460 A JP2007515460 A JP 2007515460A JP 2007515460 A JP2007515460 A JP 2007515460A JP 4791456 B2 JP4791456 B2 JP 4791456B2
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tantalum
low
protective layer
diffusion barrier
layer
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JP2008502147A (ja
JP2008502147A5 (https=
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ダン、デレン、エヌ
キム、ヒュンジュン
ロスナーガル、スティーヴン、エム
セオ、スン−チェオン
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/035—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics combinations of barrier, adhesion or liner layers, e.g. multi-layered barrier layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof

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  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2007515460A 2004-06-02 2005-05-31 低ｋ材料上にＴａＮ拡散バリア領域を堆積する方法（低ｋ材料上のＴａＮ拡散バリア領域のＰＥ−ＡＬＤ） Expired - Fee Related JP4791456B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/709,865 US7211507B2 (en) 2004-06-02 2004-06-02 PE-ALD of TaN diffusion barrier region on low-k materials
US10/709,865 2004-06-02
PCT/US2005/018953 WO2005122253A2 (en) 2004-06-02 2005-05-31 PE-ALD OF TaN DIFFUSION BARRIER REGION ON LOW-K MATERIALS

Publications (3)

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JP2008502147A JP2008502147A (ja) 2008-01-24
JP2008502147A5 JP2008502147A5 (https=) 2008-05-15
JP4791456B2 true JP4791456B2 (ja) 2011-10-12

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JP2007515460A Expired - Fee Related JP4791456B2 (ja) 2004-06-02 2005-05-31 低ｋ材料上にＴａＮ拡散バリア領域を堆積する方法（低ｋ材料上のＴａＮ拡散バリア領域のＰＥ−ＡＬＤ）

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Country Link
US (1) US7211507B2 (https=)
EP (1) EP1756856B1 (https=)
JP (1) JP4791456B2 (https=)
CN (1) CN100447955C (https=)
TW (1) TWI345273B (https=)
WO (1) WO2005122253A2 (https=)

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US20050183740A1 (en) * 2004-02-19 2005-08-25 Fulton John L. Process and apparatus for removing residues from semiconductor substrates
US7211507B2 (en) * 2004-06-02 2007-05-01 International Business Machines Corporation PE-ALD of TaN diffusion barrier region on low-k materials
KR100552820B1 (ko) * 2004-09-17 2006-02-21 동부아남반도체 주식회사 반도체 소자의 제조 방법
US7482289B2 (en) * 2006-08-25 2009-01-27 Battelle Memorial Institute Methods and apparatus for depositing tantalum metal films to surfaces and substrates
US7595270B2 (en) * 2007-01-26 2009-09-29 Asm America, Inc. Passivated stoichiometric metal nitride films
US7598170B2 (en) * 2007-01-26 2009-10-06 Asm America, Inc. Plasma-enhanced ALD of tantalum nitride films
JP5358893B2 (ja) * 2007-04-03 2013-12-04 三菱電機株式会社 トランジスタ
DE602007013386D1 (de) * 2007-07-17 2011-05-05 St Microelectronics Srl Verfahren zur Herstellung eines kupferkompatiblen Phasenwechselspeicherelements und entsprechendes Phasenwechselspeicherelement
KR101540077B1 (ko) * 2008-04-16 2015-07-28 에이에스엠 아메리카, 인코포레이티드 알루미늄 탄화수소 화합물들을 이용한 금속 카바이드 막들의 원자층 증착법
US20100055442A1 (en) * 2008-09-03 2010-03-04 International Business Machines Corporation METHOD OF PE-ALD OF SiNxCy AND INTEGRATION OF LINER MATERIALS ON POROUS LOW K SUBSTRATES
CN101740369B (zh) * 2008-11-19 2011-12-07 中国科学院微电子研究所 一种制备金属性金属氮化物薄膜的方法
US9177826B2 (en) * 2012-02-02 2015-11-03 Globalfoundries Inc. Methods of forming metal nitride materials
US8736056B2 (en) 2012-07-31 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Device for reducing contact resistance of a metal
US8962473B2 (en) 2013-03-15 2015-02-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming hybrid diffusion barrier layer and semiconductor device thereof
CN104109844B (zh) * 2013-04-18 2016-07-06 中芯国际集成电路制造(上海)有限公司 一种基于原子层沉积技术的氮化钽薄膜的制作工艺
KR102216575B1 (ko) 2014-10-23 2021-02-18 에이에스엠 아이피 홀딩 비.브이. 티타늄 알루미늄 및 탄탈륨 알루미늄 박막들
CN106086809B (zh) * 2016-06-17 2018-08-17 艾因斯（北京）钽应用科技有限公司 一种制备耐腐耐磨钽复合涂层的方法
US10008558B1 (en) * 2017-01-05 2018-06-26 International Business Machines Corporation Advanced metal insulator metal capacitor
US10032855B1 (en) 2017-01-05 2018-07-24 International Business Machines Corporation Advanced metal insulator metal capacitor

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JP2002009078A (ja) * 2000-05-15 2002-01-11 Asm Microchemistry Oy 交互層蒸着前の保護層
JP2003536272A (ja) * 2000-06-08 2003-12-02 ジニテック インク． 薄膜形成方法
JP2004165634A (ja) * 2002-08-15 2004-06-10 Interuniv Micro Electronica Centrum Vzw Ａｌｄ表面処理のためのプラズマ処理
JP2004214335A (ja) * 2002-12-27 2004-07-29 Tokyo Electron Ltd 成膜方法
JP2004311545A (ja) * 2003-04-03 2004-11-04 Matsushita Electric Ind Co Ltd 半導体装置の製造方法及び高融点金属膜の堆積装置
JP2005191290A (ja) * 2003-12-25 2005-07-14 Semiconductor Leading Edge Technologies Inc 半導体装置の製造方法
JP2006520106A (ja) * 2003-03-07 2006-08-31 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド バリアで内側が覆われた半導体コンポーネントを製造する方法

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JP2002009078A (ja) * 2000-05-15 2002-01-11 Asm Microchemistry Oy 交互層蒸着前の保護層
JP2003536272A (ja) * 2000-06-08 2003-12-02 ジニテック インク． 薄膜形成方法
JP2004165634A (ja) * 2002-08-15 2004-06-10 Interuniv Micro Electronica Centrum Vzw Ａｌｄ表面処理のためのプラズマ処理
JP2004214335A (ja) * 2002-12-27 2004-07-29 Tokyo Electron Ltd 成膜方法
JP2006520106A (ja) * 2003-03-07 2006-08-31 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド バリアで内側が覆われた半導体コンポーネントを製造する方法
JP2004311545A (ja) * 2003-04-03 2004-11-04 Matsushita Electric Ind Co Ltd 半導体装置の製造方法及び高融点金属膜の堆積装置
JP2005191290A (ja) * 2003-12-25 2005-07-14 Semiconductor Leading Edge Technologies Inc 半導体装置の製造方法

Also Published As

Publication number Publication date
EP1756856A2 (en) 2007-02-28
US20050269703A1 (en) 2005-12-08
CN100447955C (zh) 2008-12-31
US7211507B2 (en) 2007-05-01
TW200540996A (en) 2005-12-16
WO2005122253A3 (en) 2006-12-14
JP2008502147A (ja) 2008-01-24
CN101036217A (zh) 2007-09-12
EP1756856B1 (en) 2013-07-24
TWI345273B (en) 2011-07-11
EP1756856A4 (en) 2010-02-17
WO2005122253A2 (en) 2005-12-22

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