JP2008309771A - 放射線像変換パネル及び放射線イメージセンサ - Google Patents
放射線像変換パネル及び放射線イメージセンサ Download PDFInfo
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- JP2008309771A JP2008309771A JP2007327853A JP2007327853A JP2008309771A JP 2008309771 A JP2008309771 A JP 2008309771A JP 2007327853 A JP2007327853 A JP 2007327853A JP 2007327853 A JP2007327853 A JP 2007327853A JP 2008309771 A JP2008309771 A JP 2008309771A
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- radiation image
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- 230000005855 radiation Effects 0.000 title claims abstract description 87
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 83
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 80
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 79
- 229910052751 metal Inorganic materials 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 42
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 27
- 230000001681 protective effect Effects 0.000 claims description 39
- 239000011651 chromium Substances 0.000 claims description 27
- 229910052804 chromium Inorganic materials 0.000 claims description 25
- 230000002787 reinforcement Effects 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 abstract description 11
- 230000007797 corrosion Effects 0.000 abstract description 11
- 230000005540 biological transmission Effects 0.000 abstract description 5
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- 239000007888 film coating Substances 0.000 abstract 1
- 238000009501 film coating Methods 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- -1 argon ions Chemical class 0.000 description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 238000003384 imaging method Methods 0.000 description 9
- 230000003014 reinforcing effect Effects 0.000 description 9
- 229910052786 argon Inorganic materials 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 238000000992 sputter etching Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000004918 carbon fiber reinforced polymer Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000921 elemental analysis Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229920002396 Polyurea Polymers 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 150000001845 chromium compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 125000006839 xylylene group Chemical group 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B42/00—Obtaining records using waves other than optical waves; Visualisation of such records by using optical means
- G03B42/02—Obtaining records using waves other than optical waves; Visualisation of such records by using optical means using X-rays
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measurement Of Radiation (AREA)
- Conversion Of X-Rays Into Visible Images (AREA)
Abstract
【解決手段】 本発明の放射線像変換パネルは、アルミニウム基板と、アルミニウム基板の表面に形成されたアルマイト層と、アルマイト層を被覆するクロム層と、クロム層上に設けられており放射線透過性及び光反射性を有する金属膜と、金属膜を被覆しており放射線透過性及び光透過性を有する酸化物層と、酸化物層を被覆しており放射線透過性及び光透過性を有する保護膜と、保護膜上に設けられており放射線像を変換する変換部とを備える。
【選択図】 図1
Description
Claims (4)
- アルミニウム基板と、
前記アルミニウム基板の表面に形成されたアルマイト層と、
前記アルマイト層を被覆するクロム層と、
前記クロム層上に設けられており放射線透過性及び光反射性を有する金属膜と、
前記金属膜を被覆しており放射線透過性及び光透過性を有する酸化物層と、
前記酸化物層を被覆しており放射線透過性及び光透過性を有する保護膜と、
前記保護膜上に設けられており放射線像を変換する変換部と、
を備える、放射線像変換パネル。 - 前記変換部は、シンチレータであることを特徴とする請求項1記載の放射線像変換パネル。
- 前記アルミニウム基板に貼り付けられた放射線透過性の補強板を更に備え、前記アルミニウム基板は、前記補強板と前記変換部との間に配置されていることを特徴とする請求項1または2に記載の放射線像変換パネル。
- 請求項1ないし3のいずれかに記載の放射線像変換パネルと、
前記放射線像変換パネルの前記変換部から出射される光を電気信号に変換する撮像素子と、
を備える、放射線イメージセンサ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/812234 | 2007-06-15 | ||
US11/812,234 US7465932B1 (en) | 2007-06-15 | 2007-06-15 | Radiation image conversion panel, scintillator panel, and radiation image sensor |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008309771A true JP2008309771A (ja) | 2008-12-25 |
JP2008309771A5 JP2008309771A5 (ja) | 2011-02-03 |
JP5198841B2 JP5198841B2 (ja) | 2013-05-15 |
Family
ID=39930660
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007327853A Active JP5198841B2 (ja) | 2007-06-15 | 2007-12-19 | 放射線像変換パネル及び放射線イメージセンサ |
Country Status (6)
Country | Link |
---|---|
US (1) | US7465932B1 (ja) |
EP (1) | EP2012181B1 (ja) |
JP (1) | JP5198841B2 (ja) |
KR (1) | KR101026621B1 (ja) |
CN (1) | CN101324672B (ja) |
CA (1) | CA2633785C (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5267458B2 (ja) * | 2007-05-31 | 2013-08-21 | コニカミノルタエムジー株式会社 | シンチレータパネル及び放射線イメージセンサ |
JP5343970B2 (ja) * | 2008-07-25 | 2013-11-13 | コニカミノルタ株式会社 | 放射線画像検出装置 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5922518B2 (ja) * | 2012-07-20 | 2016-05-24 | 浜松ホトニクス株式会社 | シンチレータパネル及び放射線検出器 |
USD806249S1 (en) * | 2014-12-16 | 2017-12-26 | Hamamatsu Photonics K.K. | Radiation image conversion plate |
JP6504997B2 (ja) | 2015-11-05 | 2019-04-24 | 浜松ホトニクス株式会社 | 放射線像変換パネル、放射線像変換パネルの製造方法、放射線イメージセンサ及び放射線イメージセンサの製造方法 |
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2007
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2008
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- 2008-06-11 EP EP08010624.8A patent/EP2012181B1/en active Active
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JP5267458B2 (ja) * | 2007-05-31 | 2013-08-21 | コニカミノルタエムジー株式会社 | シンチレータパネル及び放射線イメージセンサ |
JP5343970B2 (ja) * | 2008-07-25 | 2013-11-13 | コニカミノルタ株式会社 | 放射線画像検出装置 |
Also Published As
Publication number | Publication date |
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CN101324672B (zh) | 2011-09-07 |
KR101026621B1 (ko) | 2011-04-04 |
US20080308734A1 (en) | 2008-12-18 |
EP2012181B1 (en) | 2016-12-28 |
CA2633785A1 (en) | 2008-12-15 |
EP2012181A1 (en) | 2009-01-07 |
CN101324672A (zh) | 2008-12-17 |
US7465932B1 (en) | 2008-12-16 |
CA2633785C (en) | 2012-02-21 |
KR20080110508A (ko) | 2008-12-18 |
JP5198841B2 (ja) | 2013-05-15 |
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