WO2017077763A1 - 放射線像変換パネル、放射線像変換パネルの製造方法、放射線イメージセンサ及び放射線イメージセンサの製造方法 - Google Patents
放射線像変換パネル、放射線像変換パネルの製造方法、放射線イメージセンサ及び放射線イメージセンサの製造方法 Download PDFInfo
- Publication number
- WO2017077763A1 WO2017077763A1 PCT/JP2016/075704 JP2016075704W WO2017077763A1 WO 2017077763 A1 WO2017077763 A1 WO 2017077763A1 JP 2016075704 W JP2016075704 W JP 2016075704W WO 2017077763 A1 WO2017077763 A1 WO 2017077763A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- radiation image
- conversion panel
- image conversion
- metal oxide
- Prior art date
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
- G01T1/2023—Selection of materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B42/00—Obtaining records using waves other than optical waves; Visualisation of such records by using optical means
- G03B42/02—Obtaining records using waves other than optical waves; Visualisation of such records by using optical means using X-rays
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K4/00—Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K4/00—Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens
- G21K2004/06—Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens with a phosphor layer
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K4/00—Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens
- G21K2004/12—Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens with a support
Definitions
- the present disclosure relates to a radiation image conversion panel, a method for manufacturing a radiation image conversion panel, a radiation image sensor, and a method for manufacturing a radiation image sensor.
- Patent Document 1 discloses a radiation image conversion panel that converts radiation into light.
- metal oxide is formed as a coating layer on the surface of the member constituting the radiation image conversion panel in order to prevent foreign matters such as dust from adhering to the member surface due to charging during manufacture.
- the metal oxide coating layer formed in order to prevent foreign matters such as dust from adhering to the surface of the member is joined when other members are joined using the surface of the metal oxide coating layer as a joining surface. There is a possibility that other members to be bonded may be peeled off due to low adhesion to the other member.
- a radiation image conversion panel including a conductive metal oxide layer, radiation having improved adhesion between the metal oxide layer and another member formed on the surface thereof.
- a radiation image conversion panel is formed on a substrate, a metal oxide layer formed on the substrate, having conductivity and a rough surface, and the surface of the metal oxide layer.
- the first organic resin layer and a phosphor layer that is formed on the first organic resin layer and includes a plurality of columnar crystals and emits light according to incident radiation.
- the radiation image conversion panel may include a metal reflective layer between the substrate and the metal oxide layer, and the metal oxide layer may be transparent to light emitted by the phosphor layer.
- Light emitted from the phosphor layer is output from a light output surface that is the upper surface of the phosphor layer.
- part of the light emitted from the phosphor layer is output in the reverse direction (substrate direction).
- the light output from the phosphor layer toward the substrate is reflected toward the light output surface by the metal reflection layer formed between the substrate and the metal oxide layer. For this reason, the radiation image conversion panel can increase the amount of light to be output.
- the radiation image conversion panel may include a dielectric layer between the metal reflection layer and the metal oxide layer.
- the light output from the phosphor layer toward the substrate is reflected by the dielectric layer toward the light output surface that is the upper surface of the phosphor layer. For this reason, the radiation image conversion panel can further increase the amount of light to be output.
- the radiation image conversion panel may include a second organic resin layer that covers the substrate, the metal reflection layer, the dielectric layer, the metal oxide layer, the first organic resin layer, and the phosphor layer. Thereby, the radiation conversion panel is protected from the outside.
- the material of the substrate may be glass or resin.
- the radiation image conversion panel and the radiation image conversion panel are bonded together.
- the difference in coefficient of thermal expansion with the light detection unit is reduced. For this reason, it is prevented that a photon detection part peels from a radiation image conversion panel by the difference in a thermal expansion coefficient.
- the metal oxide layer may be a layer formed of ITO, FTO, SnO 2 , ATO, AZO, GZO, IZO, or IGZO.
- the metal oxide layer is formed of ITO, and the surface thereof has a crystal grain region structure composed of crystal grains and crystallites, a polycrystalline structure composed of crystal grains, or a porous structure. Good.
- the radiation image conversion panel causes an anchor effect between the metal oxide layer and the first organic resin layer formed on the surface thereof, and the adhesion between the metal oxide layer and the first organic resin layer. Can be improved.
- a radiation image sensor includes the above-described radiation image conversion panel and a light detection unit that is disposed to face the phosphor layer side and detects light emitted from the phosphor layer. Thereby, the radiation image sensor can detect the light output by the radiation image conversion panel according to the incidence of radiation by the light detection unit.
- a method of manufacturing a radiation image conversion panel includes: a metal oxide layer forming step of forming a metal oxide layer on a substrate by a sputtering method, a vapor deposition method, or a dip coating method; A first organic resin layer forming step for forming a first organic resin layer on the surface by a vapor deposition method; and a phosphor layer forming step for forming a phosphor layer on the first organic resin layer by a vapor deposition method.
- the surface of the metal oxide layer can be roughened by forming a film by sputtering, vapor deposition, or dip coating. For this reason, in this manufacturing method, an anchor effect is generated between the metal oxide layer and the first organic resin layer formed on the surface, and the adhesion between the metal oxide layer and the first organic resin layer is increased. Can be improved.
- the method for manufacturing a radiation image conversion panel includes a metal reflective layer forming step of forming a metal reflective layer on a substrate by a vapor deposition method before the metal oxide layer forming step, and the metal oxide layer forming step includes: It may be a step of forming a metal oxide layer on the substrate and on the metal reflective layer. Thereby, the light output toward the substrate from the phosphor layer is reflected toward the light output surface which is the upper surface of the phosphor layer. For this reason, this manufacturing method can increase the light quantity which a radiation image conversion panel outputs.
- the manufacturing method of the radiation image conversion panel has a dielectric layer forming step of forming a dielectric layer on the metal reflective layer by a vapor deposition method after the metal reflective layer forming step, and the metal oxide layer forming step includes: It may be a step of forming a metal oxide layer on the substrate and on the dielectric layer. The light output from the phosphor layer toward the substrate is reflected by the dielectric layer toward the light output surface that is the upper surface of the phosphor layer. For this reason, this manufacturing method can further increase the amount of light output from the radiation image conversion panel.
- the second organic resin layer covering the substrate, the metal reflective layer, the dielectric layer, the metal oxide layer, the first organic resin layer, and the phosphor layer is formed after the phosphor layer forming step.
- the manufacturing method of a radiation image sensor has the photon detection part arrangement
- this manufacturing method can detect the light emitted according to a radiation from a radiation image conversion panel with a photon detection part.
- a radiation image conversion panel including a conductive metal oxide layer, radiation having improved adhesion between the metal oxide layer and another member formed on the surface thereof
- An image conversion panel, a method for manufacturing a radiation image conversion panel, a radiation image sensor, and a method for manufacturing a radiation image sensor can be provided.
- FIG. 1 is an overall view showing a configuration of a radiation image system having a radiation image conversion panel according to the first embodiment.
- FIG. 2 is a side view of the radiation image sensor according to the first embodiment.
- FIG. 3 is a partially broken perspective view of the radiation image conversion panel according to the first embodiment.
- 4 is a cross-sectional view taken along line IV-IV in FIG.
- FIG. 5 is an enlarged cross-sectional view showing the surface structure of the metal oxide layer.
- FIG. 6 is a flowchart showing a method for manufacturing the radiation image conversion panel and the radiation image sensor according to the first embodiment.
- FIG. 7 is an overall view showing a configuration of a radiation image system having a radiation image conversion panel according to the second embodiment.
- FIG. 1 is an overall view showing a configuration of a radiation image system 100 having a radiation image conversion panel according to the first embodiment.
- a radiation image system 100 shown in FIG. 1 is a system that irradiates a subject with radiation and converts the transmitted radiation into an image (radiation image).
- the radiation image system 100 is used for image diagnosis in the medical field or industrial nondestructive inspection.
- the radiation image system 100 includes a radiation image sensor 1, a radiation source 2, an electronic device 3, and an information processing device 4.
- the radiation source 2 is a radiation source of radiation I X and outputs, for example, X-rays.
- the radiation image sensor 1 receives the radiation IX output from the radiation source 2.
- a subject (not shown) is disposed between the radiation image sensor 1 and the radiation source 2.
- the radiation image sensor 1 includes a radiation image conversion panel 10 and a light detection unit 40.
- the radiation image conversion panel 10 is a flat member and outputs light corresponding to the incident radiation IX . Details of the radiation image conversion panel 10 will be described later.
- the light detection unit 40 is disposed to face the phosphor layer 17 side of the radiation image conversion panel 10 to be described later, and detects light emitted from the phosphor layer 17 (see FIG. 3).
- the light detection unit 40 includes an imaging surface 40a (see FIG. 2) on which light is incident.
- the light detection unit 40 outputs an electrical signal IE according to the light incident on the imaging surface 40a.
- a TFT panel in which a photodiode (PD) and a thin film transistor (TFT) are arranged on a substrate, a CCD (Charge-Coupled Device) or a CMOS (Complementary MOS) is used.
- a solid-state imaging device such as a metal oxide semiconductor, an imaging tube or the like can be used.
- the radiation image sensor 1 outputs an electrical signal IE corresponding to the radiation IX transmitted through the subject to the electronic device 3.
- a fiber optic plate FOP: an optical device in which optical fibers of several microns are bundled, for example, manufactured by Hamamatsu Photonics Co., Ltd. J5734
- FOP an optical device in which optical fibers of several microns are bundled, for example, manufactured by Hamamatsu Photonics Co., Ltd. J5734
- the electronic device 3 performs predetermined processing (for example, digitization) on the electrical signal IE output from the radiation image sensor 1 and outputs the processed signal to the information processing device 4.
- the electric signal IE may be sent as an analog signal to the information processing apparatus 4 or may be converted into a digital signal by the light detection unit 40. Further, the electronic device 3 is not limited to digitizing the acquired electrical signal IE , and may perform other processes. Further, the electronic device 3 may control the operation of the light detection unit 40.
- the information processing apparatus 4 includes a calculation unit such as a CPU (Central Processing Unit), a storage unit such as a ROM (Read Only Memory), a RAM (Random Access Memory) and a HDD (Hard Disk Drive), a display unit such as a display device, and the like. And a computer including an operation unit such as a mouse and a keyboard.
- the information processing apparatus 4 converts the electrical signal IE output from the electronic device 3 into image information and displays it as a radiation image on the display unit, executes image processing, or outputs the electrical signal IE output from the electronic device 3.
- the information corresponding to is stored in the storage unit.
- a radiation image is acquired as follows. First, the radiation IX output from the radiation source 2 passes through the subject and enters the radiation image conversion panel 10. The radiation I X is converted into light by the radiation image conversion panel 10. The light enters the imaging surface 40 a of the light detection unit 40. Then, an electrical signal IE corresponding to the light is output from the light detection unit 40. The output electrical signal IE is sent to the information processing apparatus 4 via the electronic device 3, and a predetermined process is performed to obtain a radiation image. In the information processing apparatus 4, a radiographic image is displayed on the display unit, and image information is stored in the storage unit.
- FIG. 2 is a side view of the radiation image sensor 1 according to the first embodiment.
- the radiation image sensor 1 includes a radiation image conversion panel 10 and a light detection unit 40 (TFT panel).
- the radiation image sensor 1 is formed by directly joining the upper surface 10 a on the light output surface side of the radiation image conversion panel 10 and the imaging surface 40 a of the light detection unit 40.
- the radiation image conversion panel 10 and the light detection unit 40 may be joined by an adhesive, or an optical coupling material (refractive index matching material) may be used to reduce light loss.
- the radiation image conversion panel 10 and the light detection unit 40 do not have to be joined. For example, both may be mechanically combined using a fixing member. Further, the radiation image conversion panel 10 and the light detection unit 40 do not necessarily need to be in contact with each other, and may be arranged apart from each other.
- the radiation image sensor 1 can integrate the radiation image conversion panel 10 and the light detection unit 40, the radiation image sensor 1 can be easily handled and can be easily adjusted by omitting the optical system. .
- FIG. 3 is a partially broken perspective view of the radiation image conversion panel 10 according to the first embodiment.
- 4 is a cross-sectional view taken along line IV-IV in FIG.
- the radiation image conversion panel 10 includes a substrate 11, a metal reflective layer 12, a dielectric layer 13, a protective layer 14, a metal oxide layer 15, a first organic resin layer 16, and a phosphor. It is comprised as a laminated body provided with the layer 17 and the 2nd organic resin layer 18.
- the substrate 11 has a front surface 11 a and a back surface 11 b and functions as a support substrate for the phosphor layer 17.
- the laminate includes a phosphor layer 17 that is made of a plurality of columnar crystals and emits light in response to incident radiation IX .
- the phosphor layer 17 is provided on the substrate 11 and on the surface 11 a side of the substrate 11. “On the substrate” means above the substrate 11 and means not only that it is provided in contact with the surface 11 a of the substrate 11 but also that a layer or a space may be interposed between the substrate 11 and the substrate 11. To do.
- the metal reflective layer 12, the dielectric layer 13, the protective layer 14, the metal oxide layer 15, and the first organic resin layer 16 are interposed between the substrate 11 and the phosphor layer 17.
- the phosphor layer 17 includes a phosphor that converts the radiation IX into light.
- the light is, for example, visible light, infrared light, ultraviolet light, or the like.
- the upper surface (surface 17a) of the phosphor layer 17 is a light output surface that outputs light.
- the phosphor layer 17 is composed of CsI (cesium iodide) columnar crystals doped with Tl (thallium) or Na (sodium).
- the phosphor layer 17 is made of NaI (sodium iodide) doped with Tl, KI (potassium iodide) doped with Tl, or LiI (lithium iodide) doped with Eu (europium). May be formed.
- the thickness of the phosphor layer 17 is, for example, 100 to 1000 ⁇ m, but is not limited to this.
- the thickness of the phosphor layer 17 may be 400 to 700 ⁇ m.
- the average needle diameter of the columnar crystals constituting the phosphor layer 17 may be 3 to 10 ⁇ m.
- the size of the phosphor layer 17 is smaller than that of the substrate 11 when viewed from the thickness direction of the substrate 11.
- the positional relationship between the phosphor layer 17 and the substrate 11 in the direction orthogonal to the thickness direction is appropriately set within a range in which the phosphor layer 17 and the substrate 11 overlap when viewed from the thickness direction of the radiation image conversion panel 10.
- the radiation IX is incident from the back surface 11 b side of the substrate 11. That is, the back surface 11b of the substrate 11 is a radiation incident surface.
- the substrate 11 is formed of a material having radiation transparency.
- the material of the substrate 11 is glass. Examples of the glass include alkali-free glass, quartz glass, and chemically tempered glass.
- Resin may be sufficient. Examples of the resin include PET (polyethylene terephthalate) and PI (polyimide). Alternatively, amorphous carbon or Al (aluminum) may be used as the material of the substrate 11.
- the thickness of the substrate 11 is, for example, 0.02 to 0.6 mm.
- a metal oxide layer 15 and a first organic resin layer 16 are formed between the substrate 11 and the phosphor layer 17.
- the metal oxide layer 15 is formed on the substrate 11 and has conductivity.
- the metal oxide layer 15 has a rough surface 15a.
- the rough surface is a surface of a crystal grain region structure (grain-subgrain structure) composed of crystal grains (grains) and crystallites (subgrains), a surface of a polycrystalline structure composed of crystal grains, or a surface of a porous structure.
- FIG. 5 is an enlarged cross-sectional view showing the surface structure of the metal oxide layer 15.
- FIG. 5A shows a crystal grain region structure. In the crystal grain region structure, the surface is covered with crystal grains and crystallites. The crystal grains may be composed of crystallites.
- the grain size of the crystal grains is, for example, about 200 to 350 nm, and the grain size of the crystallite is, for example, about 20 to 50 nm.
- the height h 1 of the unevenness is about Ra 2.6 to 6.0 nm in terms of arithmetic average roughness.
- FIG. 5B shows a polycrystalline structure. In the polycrystalline structure, the surface is covered with crystal grains.
- the height h 2 of the unevenness is about Ra 0.9 to 1.5 nm in terms of arithmetic average roughness.
- FIG. 5C shows a porous structure. In the porous structure, a plurality of pores are formed on the surface.
- the metal oxide layer 15 is formed of a material that is transparent to the light emitted from the phosphor layer 17.
- the metal oxide layer 15 is made of, for example, ITO (indium tin oxide).
- the metal oxide layer 15 includes FTO (adding fluorine to tin oxide as a dopant), SnO 2 (tin oxide), ATO (adding antimony to tin oxide as a dopant), AZO (adding aluminum to zinc oxide as a dopant). ), GZO (adding gallium as a dopant to zinc oxide), IZO (adding indium as a dopant to zinc oxide) or IGZO (adding indium and gallium as a dopant to zinc oxide).
- the metal oxide layer 15 is a thin film having a thickness of about 10 to 300 nm.
- the first organic resin layer 16 is a protective layer formed on the surface 15 a of the metal oxide layer 15. “On the surface” means being in contact with the surface. The phosphor layer 17 described above is formed on the first organic resin layer 16. “On the first organic resin layer” means above the first organic resin layer 16 and is not only provided in contact with the surface of the first organic resin layer 16 but also with the first organic resin layer 16. It means that a layer or a space may be interposed between them.
- the material of the first organic resin layer 16 is, for example, polyparaxylylene.
- the material of the first organic resin layer 16 is xylylene such as polymonochloroparaxylylene, polydichloroparaxylylene, polytetrachloroparaxylylene, polyfluoroparaxylylene, polydimethylparaxylylene, polyjetylparaxylylene, etc. It may be a system material, polyurea, polyimide, acrylic resin, urethane acrylic resin, or the like. In the present embodiment, the thickness of the first organic resin layer 16 is about 10 ⁇ m, but is not limited thereto.
- a metal reflective layer 12 is formed between the substrate 11 and the metal oxide layer 15.
- the metal reflection layer 12 reflects the light emitted from the phosphor layer 17.
- the metal reflection layer 12 reflects light emitted from the phosphor layer 17 toward the substrate 11 toward the light output surface that is the surface 17 a of the phosphor layer 17.
- the metal reflection layer 12 is formed of a metal such as Au (gold), Ag (silver), or Al. Considering the balance between the light reflectance of the metal reflection layer 12 and the radiation intensity incident on the phosphor layer 17, the thickness of the metal reflection layer 12 may be, for example, 50 nm or more and 200 nm or less.
- a dielectric layer 13 is formed between the metal reflective layer 12 and the metal oxide layer 15.
- the dielectric layer 13 is formed on the surface of the metal reflective layer 12.
- the dielectric layer 13 is a multilayer structure in which at least one first dielectric layer 131 and second dielectric layer 132 are alternately stacked.
- the first dielectric layer 131 and the second dielectric layer 132 are dielectrics having different refractive indexes.
- the first dielectric layer is made of, for example, SiO 2 (silicon dioxide)
- the second dielectric layer is made of, for example, TiO 2 (titanium oxide) or Nb 2 O 5 (niobium oxide).
- the dielectric layer 13 reflects the light emitted from the phosphor layer 17 toward the substrate 11 toward the light output surface that is the surface 17 a of the phosphor layer 17.
- the radiation image conversion panel 10 may not include at least one of the metal reflection layer 12 and the dielectric layer 13.
- the metal oxide layer 15 may not be formed of a material that is transparent to the light emitted by the phosphor layer 17. .
- a protective layer 14 is formed between the dielectric layer 13 and the metal oxide layer 15.
- the protective layer 14 is formed on the surface of the dielectric layer 13.
- the material of the protective layer 14 is, for example, SiO 2.
- the radiation image conversion panel 10 may not include the protective layer 14.
- the first organic resin layer 16 not only covers the surface of the metal oxide layer 15 but also includes the substrate 11, the metal reflection layer 12, the dielectric layer 13, the protective layer 14, and the metal oxide layer 15. It is provided so that the whole 1st laminated body may be covered.
- the first organic resin layer 16 is the entire first stacked body including the substrate 11, the metal reflection layer 12, the dielectric layer 13, and the metal oxide layer 15. Can be covered.
- the 1st organic resin layer 16 does not need to cover the whole 1st laminated body mentioned above. That is, a partial region of the first stacked body may not be covered with the first organic resin layer 16.
- the second organic resin layer is provided around the first laminated body covered with the first organic resin layer 16 and the phosphor layer 17 provided on the upper surface of the first laminated body. 18 is provided. That is, the second organic resin layer 18 is a second laminated body including the substrate 11, the metal reflection layer 12, the dielectric layer 13, the protective layer 14, the metal oxide layer 15, the first organic resin layer 16, and the phosphor layer 17. It is provided to cover the whole.
- the second organic resin layer 18 includes the substrate 11, the metal reflective layer 12, the dielectric layer 13, the metal oxide layer 15, the first organic resin layer 16, and What is necessary is just to cover the whole 2nd laminated body which consists of the fluorescent substance layer 17.
- the 2nd organic resin layer 18 does not need to cover the whole 2nd laminated body mentioned above. That is, a partial region of the second stacked body may not be covered with the second organic resin layer 18.
- the second organic resin layer 18 may be formed using the same material as the first organic resin layer 16, or may be formed using a different material.
- the thickness of the second organic resin layer 18 is, for example, 10 ⁇ m.
- the radiation image conversion panel 10 may not include the second organic resin layer 18.
- the radiation IX incident on the back surface side of the radiation image conversion panel 10 is the second organic resin layer 18, the first organic resin layer 16, the substrate 11, the metal reflection layer 12, the dielectric layer 13, the protective layer 14, and the metal oxide.
- the light passes through the layer 15 and the first organic resin layer 16 in this order, and enters the phosphor layer 17.
- the phosphor layer 17 light is emitted according to the incident radiation IX .
- light corresponding to the radiation IX is output from the surface 17 a that is the upper surface of the phosphor layer 17.
- a part of the light emitted from the phosphor layer 17 is output in the reverse direction (substrate 11 side). Since the metal oxide layer 15 is formed of a material that is transparent to the light emitted from the phosphor layer 17, the light output to the substrate 11 side passes through the metal oxide layer 15 and passes through the dielectric layer. 13 or the metal reflection layer 12 is reached. The reached light is reflected toward the light output surface by the dielectric layer 13 or the metal reflection layer 12. For this reason, the radiation image conversion panel 10 can increase the light quantity of the output light.
- the radiation image conversion panel 10 glass is used as the material of the substrate 11.
- the radiation image conversion panel 10 and the light detection unit 40 The difference in the coefficient of thermal expansion is small.
- the radiation image conversion panel 10 can prevent the light detection unit 40 from being separated from the radiation image conversion panel 10 due to a difference in thermal expansion coefficient.
- the light detection unit 40 is bonded to the upper surface on the light output surface side of the radiation image conversion panel 10 and the substrate material of the light detection unit 40 is a resin
- a resin is used as the material of the substrate 11.
- the difference in coefficient of thermal expansion between the radiation image conversion panel 10 and the light detection unit 40 is reduced.
- the radiation image conversion panel 10 can prevent the light detection unit 40 from being separated from the radiation image conversion panel 10 due to a difference in thermal expansion coefficient.
- the material of the radiation image conversion panel 10 is made of glass or resin, and by reducing the difference in coefficient of thermal expansion from the light detection unit 40, fine scratches on the substrate 11 and the phosphor layer 17 are deposited by heat during operation. Therefore, it is possible to prevent a flaw that occurs between the light detection unit 40 and the imaging surface 40a from moving due to the abnormal growth portion that occurs when the layer is formed. For this reason, the radiation image conversion panel 10 can avoid a troublesome calibration.
- the radiation image conversion panel 10 can improve the flatness of each layer formed on the substrate 11.
- substrate 11 is formed with glass, it is easy to generate
- the radiation image conversion panel 10 is manufactured, foreign matters such as dust may adhere to the surface of the members constituting the radiation image conversion panel 10 due to static electricity.
- the first organic resin layer 16 is formed on the uneven surface due to the adhesion of foreign matters such as dust, the surface of the first organic resin layer 16 is uneven along the foreign matters such as dust. There is a case.
- the phosphor layer 17 is formed on the surface of the first organic resin layer 16 that is uneven, the columnar crystals constituting the phosphor layer 17 may grow abnormally and a defective image may be generated. .
- the radiation image conversion panel 10 includes the conductive metal oxide layer 15 to remove static electricity and prevent foreign matters such as dust from adhering to the surface due to electrification. Thereby, the radiation image conversion panel 10 can avoid the abnormal shadow which arises when a foreign material mixes between the radiation entrance plane and the phosphor layer 17. Furthermore, the radiation image conversion panel 10 can ensure the flatness of the phosphor layer 17 by preventing foreign matter from adhering to the underlying layer of the phosphor layer 17. That is, the radiation image conversion panel 10 can suppress abnormal growth of columnar crystals constituting the phosphor layer 17 formed on the first organic resin layer 16 and can avoid generation of a defective image. .
- the radiation image conversion panel 10 can suppress the absorption of the radiation IX of the metal oxide layer 15. Since the metal oxide layer 15 is a thin film and is made of a material that is transparent to the light emitted from the phosphor layer 17, the radiation image conversion panel 10 is reflected by the metal reflection layer 12. Light transmittance can be ensured.
- the radiation image conversion panel 10 since the surface 15a of the metal oxide layer 15 is a rough surface, the radiation image conversion panel 10 has an anchor effect between the metal oxide layer 15 and the first organic resin layer 16 formed on the surface 15a. As a result, the adhesion between the metal oxide layer 15 and the first organic resin layer 16 can be improved. Since the phosphor layer 17 is formed on the surface of the first organic resin layer 16, the first organic resin layer 16, which is a base layer, comes into close contact with the metal oxide layer 15, and as a result, the phosphor layer 17. Also, the structure is difficult to peel off from the metal oxide layer 15. That is, the radiation image conversion panel 10 can improve impact resistance.
- the height h 1 of the surface roughness of the crystal grain structure is about Ra 2.6 to 6.0 nm in terms of arithmetic average roughness, and the surface roughness height of the polycrystalline structure of the crystal grain is high.
- the height h 2 is about Ra 0.9 to 1.5 nm in terms of arithmetic average roughness. That is, the size of the unevenness is very small compared to a foreign matter of about several ⁇ m. For this reason, even if the surface 15a of the metal oxide layer 15 is rough, the columnar crystal of the phosphor layer 17 does not grow abnormally.
- the dielectric layer 13 when the dielectric layer 13 is formed by vapor deposition, a minute pinhole may occur.
- the components of the phosphor layer 17 reach the metal reflecting layer 12 through minute pinholes existing in the dielectric layer 13, and the metal reflecting layer 12 is corroded. And can cause deterioration.
- the radiation image conversion panel 10 since the first organic resin layer 16 is present, the radiation image conversion panel 10 can block the pinhole even when a pinhole is generated when the dielectric layer 13 is formed. For this reason, the radiation image conversion panel 10 can suppress the components of the phosphor layer 17 from reaching the metal reflection layer 12. Furthermore, since the radiation image conversion panel 10 is entirely covered, the components of the phosphor layer 17 can also be prevented from reaching the metal reflection layer 12 from the side surface side of the substrate 11.
- the second organic resin layer 18 is formed so as to cover at least the substrate 11, the metal reflection layer 12, the dielectric layer 13, the metal oxide layer 15, the first organic resin layer 16, and the phosphor layer 17. . That is, even if the phosphor layer 17 is formed of a material having deliquescence, the second organic resin layer 18 can prevent moisture from entering the phosphor layer 17. Further, the second organic resin layer 18 can protect the radiation image conversion panel 10 from the outside.
- the metal reflection layer 12, the dielectric layer 13, the protective layer 14, and the metal oxide layer 15 are formed of an inorganic material, the difference in coefficient of thermal expansion in each layer can be reduced. it can. For this reason, it becomes the radiation image conversion panel 10 excellent in thermal shock resistance.
- FIG. 6 is a flowchart showing a method for manufacturing the radiation image conversion panel 10 and the radiation image sensor 1 according to the first embodiment.
- the manufacturing method of the radiation image conversion panel 10 includes substrate setting processing (S1: substrate setting step), metal reflecting layer forming processing (S2: metal reflecting layer forming step), dielectric layer forming processing ( S3: dielectric layer forming step), protective layer forming process (S4: protective layer forming step), metal oxide layer forming process (S5: metal oxide layer forming step), first organic resin layer forming process (S6: first) 1 organic resin layer forming step), phosphor layer forming process (S7: phosphor layer forming step), and second organic resin layer forming process (S8: second organic resin layer forming step).
- the manufacturing method of the radiation image conversion panel 10 is performed using a general-purpose film forming apparatus.
- the substrate 11 is prepared as a substrate setting process (S1).
- the substrate 11 is placed on the substrate holder in the chamber of the film forming apparatus.
- the metal reflection layer 12 is formed on the surface of the substrate 11 by a vapor deposition method.
- the vapor deposition method includes a physical vapor deposition method and a chemical vapor deposition method.
- the physical vapor deposition method is a sputtering method or a vapor deposition method.
- a material target is prepared in a chamber, a discharge is performed between the substrate and the material target in an inert gas atmosphere, a cation generated by the discharge is made to collide with the material target, and a material substance is sputtered. This is a method of depositing a material substance on a substrate.
- the vapor deposition method is a method in which a material substance is deposited on a substrate by heating and evaporating the material substance.
- the chemical vapor deposition method is a film forming method in which a material gas is introduced into a chamber, decomposed by heat or plasma, and deposited on a substrate surface.
- the dielectric layer 13 is formed on the surface of the metal reflective layer 12 by a vapor deposition method.
- the dielectric layers 13 are formed by alternately laminating the first dielectric layers 131 and the second dielectric layers 132 one by one.
- the protective layer 14 is formed on the surface of the dielectric layer 13 by a vapor deposition method.
- the metal oxide layer 15 is formed on the surface of the protective layer 14 by sputtering, vapor deposition, or dip coating.
- the ITO film is formed by sputtering, the surface of the crystal grain region structure shown in FIG.
- the ITO film is formed by vapor deposition, the surface of the polycrystalline structure shown in FIG. That is, this manufacturing method can make the surface of the metal oxide layer 15 rough.
- the dip coating method is a method in which a thin film is formed by immersing a substrate in a solvent solution of a material substance in a state where the substrate is erected vertically, and then lifting and drying and baking.
- the substrate 11 is taken out from the chamber.
- the ITO film is formed by the dip coating method, the surface of the porous structure shown in FIG. The rough surface described above can also be formed when ITO, FTO, SnO 2 , ATO, AZO, GZO, IZO, or IGZO is adopted as the material of the metal oxide layer 15.
- the first organic resin layer 16 is formed on the surface of the metal oxide layer 15 by a vapor deposition method.
- the first organic resin layer 16 is formed so as to cover the surface, side surface, and bottom surface of the first laminate including the substrate 11, the metal reflection layer 12, the dielectric layer 13, the protective layer 14, and the metal oxide layer 15.
- Such deposition can be realized, for example, by floating and fixing the substrate 11 from the substrate holder (for example, US Pat. No. 6,777,690).
- the phosphor layer 17 is formed on the surface of the first organic resin layer 16 by a vapor deposition method.
- substrate 11, the metal reflection layer 12, the dielectric material layer 13, the protective layer 14, the metal oxide layer 15, the 1st organic resin layer 16, and the fluorescent substance layer 17 are covered.
- the second organic resin layer 18 is formed by a vapor deposition method.
- the deposition method the same method as in the first organic resin layer forming process (S6) can be employed. This completes the manufacture of the radiation image conversion panel 10.
- the manufacturing method of the radiation image sensor 1 includes a light detection unit arrangement process (S19: light detection unit arrangement step) in addition to the steps S1 to S8 of the method of manufacturing the radiation image conversion panel 10 described above. ).
- an adhesive is applied to the upper surface 10a (here, the surface of the second organic resin layer 18) on the light output surface side of the radiation image conversion panel 10, and the imaging surface 40a of the light detection unit 40 is applied. Bonded to the side.
- the production of the radiation image sensor 1 is completed, and the radiation image sensor 1 shown in FIG. 2 is completed.
- the manufacturing method of the radiation image conversion panel 10 and the radiation image sensor 1 according to the present embodiment, radiation having improved adhesion between the metal oxide layer 15 and the first organic resin layer 16 formed on the surface thereof.
- the image conversion panel 10 and the radiation image sensor 1 can be manufactured.
- the radiation image sensor 1 ⁇ / b> A according to the second embodiment further includes a reduction optical system as compared with the radiation image sensor 1 described in the first embodiment, and emits light from the upper surface on the light output surface side of the radiation image conversion panel 10.
- positions in the state which separated the detection part 40 differs.
- the description will focus on the differences from the first embodiment, and a duplicate description will be omitted.
- FIG. 7 is an overall view showing a configuration of a radiation image system 100A having the radiation image conversion panel 10 according to the second embodiment.
- the radiation image sensor 1 ⁇ / b> A according to this embodiment includes a radiation image conversion panel 10, a mirror 20, a lens 30, and a light detection unit 40.
- the radiation image storage panel 10 is a flat member, and outputs the light I L corresponding to the radiation I X incident.
- the output side of the light I L of the radiation image conversion panel 10, a mirror 20, a lens 30 and a light detecting portion 40 are disposed in order.
- Mirror 20 and the lens 30, by reducing the light I L functions as a reducing optical system for guiding to the light detector 40.
- the reduction optical system is not limited to the illustrated configuration. For example, you may comprise only the mirror 20 or the lens 30.
- FIG. The mirror 20 and the lens 30 may be singular or plural.
- a prism and other optical components may be used.
- a small photodetection unit 40 can be used by using a reduction optical system.
- the light detection unit 40 detects light emitted from the phosphor layer 17 (see FIG. 3) of the radiation image conversion panel 10.
- Light detecting unit 40 includes an imaging surface for incident light I L that has been reduced by a mirror 20 and a lens 30.
- Light detection unit 40 outputs an electrical signal I E according to the light I L that is incident on the imaging surface.
- a radiation image is acquired as follows. First, the radiation IX output from the radiation source 2 passes through the subject and enters the radiation image conversion panel 10. Radiation I X is converted into light I L by the radiation image convertor panel 10. The light IL is reduced by the mirror 20 and the lens 30 and guided to the imaging surface of the light detection unit 40. Then, the electric signal I E from the light detector 40 corresponding to the light I L is output. The output electrical signal IE is sent to the information processing apparatus 4 via the electronic device 3, and a predetermined process is performed to obtain a radiation image. In the information processing apparatus 4, a radiographic image is displayed on the display unit, and image information is stored in the storage unit.
- the manufacturing method of the radiation image conversion panel 10 according to the present embodiment includes steps S1 to S8 similar to those of the first embodiment as shown in FIG.
- the manufacturing method of the radiation image sensor 1A according to the present embodiment includes the step of arranging the mirror 20 and the lens 30 after step S8, in addition to steps S1 to S9 similar to those of the first embodiment as shown in FIG. The arrangement step is further included.
- the radiation image sensor 1 ⁇ / b> A provides adhesion between the metal oxide layer 15 and the first organic resin layer 16 formed on the surface thereof, similarly to the radiation image sensor 1 described in the first embodiment. Can be improved.
- the substrate 11, the metal reflective layer 12, the dielectric layer 13, the protective layer 14, the metal oxide layer 15, the first organic resin layer 16, and the phosphor layer 17 are stacked in this order.
- the metal oxide layer 15 may be laminated on the surface of the substrate 11, and the first organic resin layer 16 may be laminated on the surface of the metal oxide layer 15.
- the dielectric layer 13 is an example of a multilayer structure in which the first dielectric layers 131 and the second dielectric layers 132 are alternately stacked at least one layer. Only one of the dielectric layer 131 and the second dielectric layer 132 may be formed.
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Measurement Of Radiation (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Conversion Of X-Rays Into Visible Images (AREA)
- Apparatus For Radiation Diagnosis (AREA)
Abstract
Description
図1は、第1実施形態に係る放射線像変換パネルを有する放射線イメージシステム100の構成を示す全体図である。図1に示される放射線イメージシステム100は、放射線を被写体へ照射し、透過した放射線を画像(放射線画像)へ変換するシステムであり、例えば医療分野における画像診断や工業用非破壊検査などに用いられる。図1に示されるように、放射線イメージシステム100は、放射線イメージセンサ1、放射線源2、電子機器3及び情報処理装置4を備えている。
第2実施形態に係る放射線イメージセンサ1Aは、第1実施形態で説明した放射線イメージセンサ1と比べて、縮小光学系を更に備えており、放射線像変換パネル10の光出力面側の上面から光検出部40を離した状態で配置する点が相違する。第2実施形態では、第1実施形態との相違点を中心に説明し、重複する説明は省略する。
Claims (13)
- 基板と、
前記基板上に形成され、導電性を有し、表面が粗面である金属酸化物層と、
前記金属酸化物層の表面上に形成された第1有機樹脂層と、
前記第1有機樹脂層上に形成され、複数の柱状結晶からなり、入射された放射線に応じて光を発する蛍光体層と、
を備える放射線像変換パネル。 - 前記基板と前記金属酸化物層との間に金属反射層を備え、
前記金属酸化物層は、前記蛍光体層により発される前記光に対して透明である、
請求項1に記載の放射線像変換パネル。 - 前記金属反射層と前記金属酸化物層との間に誘電体層を備える請求項2に記載の放射線像変換パネル。
- 前記基板、前記金属反射層、前記誘電体層、前記金属酸化物層、前記第1有機樹脂層及び前記蛍光体層を覆う第2有機樹脂層を備える請求項3に記載の放射線像変換パネル。
- 前記基板の材料は、ガラス又は樹脂である請求項1~4の何れか一項に記載の放射線像変換パネル。
- 前記金属酸化物層は、ITO、FTO、SnO2、ATO、AZO、GZO、IZO又はIGZOで形成された層である請求項1~5の何れか一項に記載の放射線像変換パネル。
- 前記金属酸化物層は、ITOで形成され、その表面が、結晶粒及び結晶子からなる結晶粒領域構造、結晶粒からなる多結晶構造、又は、多孔質構造である請求項1~5の何れか一項に記載の放射線像変換パネル。
- 請求項1~7の何れか一項に記載の前記放射線像変換パネルと、
前記蛍光体層側に対向して配置され、前記蛍光体層から発される前記光を検出する光検出部と、
を備える放射線イメージセンサ。 - 基板上に、スパッタ法、蒸着法又はディップコート法によって金属酸化物層を形成する金属酸化物層形成ステップと、
前記金属酸化物層の表面上に気相堆積法によって第1有機樹脂層を形成する第1有機樹脂層形成ステップと、
前記第1有機樹脂層上に気相堆積法によって蛍光体層を形成する蛍光体層形成ステップと、
を有する放射線像変換パネルの製造方法。 - 前記金属酸化物層形成ステップの前に、前記基板上に気相堆積法によって金属反射層を形成する金属反射層形成ステップを有し、
前記金属酸化物層形成ステップは、前記基板上であって前記金属反射層上に前記金属酸化物層を形成するステップである請求項9に記載の放射線像変換パネルの製造方法。 - 前記金属反射層形成ステップの後に、前記金属反射層上に気相堆積法によって誘電体層を形成する誘電体層形成ステップを有し、
前記金属酸化物層形成ステップは、前記基板上であって前記誘電体層上に前記金属酸化物層を形成するステップである請求項10に記載の放射線像変換パネルの製造方法。 - 前記蛍光体層形成ステップの後に、前記基板、前記金属反射層、前記誘電体層、前記金属酸化物層、前記第1有機樹脂層及び前記蛍光体層を覆う第2有機樹脂層を、気相堆積法によって形成する第2有機樹脂層形成ステップを有する請求項11に記載の放射線像変換パネルの製造方法。
- 請求項1~7の何れか一項に記載の放射線像変換パネルの前記蛍光体層側に、前記放射線像変換パネルの前記蛍光体層から発される前記光を検出する光検出部を配置する光検出部配置ステップを有する放射線イメージセンサの製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/772,201 US10261198B2 (en) | 2015-11-05 | 2016-09-01 | Radiation image conversion panel, method for producing radiation image conversion panel, radiation image sensor, and method for producing radiation image sensor |
EP16861832.0A EP3373308B1 (en) | 2015-11-05 | 2016-09-01 | Radiation image conversion panel, method for producing radiation image conversion panel, radiation image sensor, and method for producing radiation image sensor |
KR1020187015369A KR102541335B1 (ko) | 2015-11-05 | 2016-09-01 | 방사선상 변환 패널, 방사선상 변환 패널의 제조 방법, 방사선 이미지 센서 및 방사선 이미지 센서의 제조 방법 |
CN201680064511.7A CN108352208A (zh) | 2015-11-05 | 2016-09-01 | 放射线图像变换面板、放射线图像变换面板的制造方法、放射线图像传感器及放射线图像传感器的制造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015217793A JP6504997B2 (ja) | 2015-11-05 | 2015-11-05 | 放射線像変換パネル、放射線像変換パネルの製造方法、放射線イメージセンサ及び放射線イメージセンサの製造方法 |
JP2015-217793 | 2015-11-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2017077763A1 true WO2017077763A1 (ja) | 2017-05-11 |
Family
ID=58661853
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2016/075704 WO2017077763A1 (ja) | 2015-11-05 | 2016-09-01 | 放射線像変換パネル、放射線像変換パネルの製造方法、放射線イメージセンサ及び放射線イメージセンサの製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10261198B2 (ja) |
EP (1) | EP3373308B1 (ja) |
JP (1) | JP6504997B2 (ja) |
KR (1) | KR102541335B1 (ja) |
CN (1) | CN108352208A (ja) |
TW (1) | TWI699547B (ja) |
WO (1) | WO2017077763A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7292868B2 (ja) * | 2018-12-18 | 2023-06-19 | キヤノン株式会社 | 検出器 |
CN111193851B (zh) * | 2020-01-07 | 2022-03-15 | 中北大学 | 一种大视场高分辨率成像装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62174700A (ja) * | 1985-10-14 | 1987-07-31 | 富士写真フイルム株式会社 | 放射線像変換パネル |
JP2000241595A (ja) * | 1999-02-23 | 2000-09-08 | Fuji Photo Film Co Ltd | 放射線像変換パネル |
WO2011089946A1 (ja) * | 2010-01-25 | 2011-07-28 | コニカミノルタエムジー株式会社 | 放射線画像変換パネルとそれを用いた放射線画像検出器 |
JP2013217904A (ja) * | 2012-03-13 | 2013-10-24 | Fujifilm Corp | 放射線画像検出装置 |
JP2014021005A (ja) * | 2012-07-20 | 2014-02-03 | Hamamatsu Photonics Kk | シンチレータパネル及び放射線検出器 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7034306B2 (en) * | 1998-06-18 | 2006-04-25 | Hamamatsu Photonics K.K. | Scintillator panel and radiation image sensor |
US7372046B2 (en) * | 2004-10-04 | 2008-05-13 | Konica Minolta Medical & Graphic, Inc. | Radiation image conversion panel |
JP2007139604A (ja) * | 2005-11-18 | 2007-06-07 | Konica Minolta Medical & Graphic Inc | 放射線用シンチレータプレート |
DE102007002416A1 (de) * | 2006-04-13 | 2007-10-18 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Körper und Verfahren zur Herstellung eines strahlungsemittierenden Körpers |
JP4886488B2 (ja) | 2006-12-02 | 2012-02-29 | インフォビジョン オプトエレクトロニクス ホールデングズ リミティッド | 液晶表示装置用の液晶パネル |
EA013284B1 (ru) * | 2007-06-15 | 2010-04-30 | Хамамацу Фотоникс К.К. | Панель преобразования радиационного изображения и датчик радиационного изображения |
US20080311484A1 (en) * | 2007-06-15 | 2008-12-18 | Hamamatsu Photonicfs K.K. | Radiation image conversion panel, scintillator panel, and radiation image sensor |
US7468514B1 (en) * | 2007-06-15 | 2008-12-23 | Hamamatsu Photonics K.K. | Radiation image conversion panel, scintillator panel, and radiation image sensor |
US7465932B1 (en) | 2007-06-15 | 2008-12-16 | Hamamatsu Photonics K.K. | Radiation image conversion panel, scintillator panel, and radiation image sensor |
US7732788B2 (en) * | 2007-10-23 | 2010-06-08 | Hamamatsu Photonics K.K. | Radiation image converting panel, scintillator panel and radiation image sensor |
JP2012202831A (ja) * | 2011-03-25 | 2012-10-22 | Fujifilm Corp | 放射線画像検出装置及び放射線画像検出装置の製造方法 |
JP5922518B2 (ja) * | 2012-07-20 | 2016-05-24 | 浜松ホトニクス株式会社 | シンチレータパネル及び放射線検出器 |
-
2015
- 2015-11-05 JP JP2015217793A patent/JP6504997B2/ja active Active
-
2016
- 2016-09-01 EP EP16861832.0A patent/EP3373308B1/en active Active
- 2016-09-01 US US15/772,201 patent/US10261198B2/en active Active
- 2016-09-01 CN CN201680064511.7A patent/CN108352208A/zh active Pending
- 2016-09-01 KR KR1020187015369A patent/KR102541335B1/ko active IP Right Grant
- 2016-09-01 WO PCT/JP2016/075704 patent/WO2017077763A1/ja active Application Filing
- 2016-09-12 TW TW105129606A patent/TWI699547B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62174700A (ja) * | 1985-10-14 | 1987-07-31 | 富士写真フイルム株式会社 | 放射線像変換パネル |
JP2000241595A (ja) * | 1999-02-23 | 2000-09-08 | Fuji Photo Film Co Ltd | 放射線像変換パネル |
WO2011089946A1 (ja) * | 2010-01-25 | 2011-07-28 | コニカミノルタエムジー株式会社 | 放射線画像変換パネルとそれを用いた放射線画像検出器 |
JP2013217904A (ja) * | 2012-03-13 | 2013-10-24 | Fujifilm Corp | 放射線画像検出装置 |
JP2014021005A (ja) * | 2012-07-20 | 2014-02-03 | Hamamatsu Photonics Kk | シンチレータパネル及び放射線検出器 |
Also Published As
Publication number | Publication date |
---|---|
TWI699547B (zh) | 2020-07-21 |
KR20180080264A (ko) | 2018-07-11 |
EP3373308A1 (en) | 2018-09-12 |
EP3373308B1 (en) | 2020-05-20 |
US10261198B2 (en) | 2019-04-16 |
JP6504997B2 (ja) | 2019-04-24 |
EP3373308A4 (en) | 2019-06-26 |
KR102541335B1 (ko) | 2023-06-08 |
JP2017090125A (ja) | 2017-05-25 |
CN108352208A (zh) | 2018-07-31 |
TW201727263A (zh) | 2017-08-01 |
US20180313963A1 (en) | 2018-11-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101022150B1 (ko) | 방사선상 변환 패널, 신틸레이터 패널 및 방사선 이미지센서 | |
US7468514B1 (en) | Radiation image conversion panel, scintillator panel, and radiation image sensor | |
US8829447B2 (en) | Photoelectric conversion substrate, radiation detector, radiographic image capture device, and manufacturing method of radiation detector | |
US20050205797A1 (en) | Scintillator panel, method of manufacturing scintillator panel, radiation detection device, and radiation detection system | |
JP2014002115A (ja) | 放射線検出装置、その製造方法及び撮像システム | |
US20130048960A1 (en) | Photoelectric conversion substrate, radiation detector, and radiographic image capture device | |
WO2017077763A1 (ja) | 放射線像変換パネル、放射線像変換パネルの製造方法、放射線イメージセンサ及び放射線イメージセンサの製造方法 | |
US20080311484A1 (en) | Radiation image conversion panel, scintillator panel, and radiation image sensor | |
KR100945615B1 (ko) | 신틸레이터 패널 및 방사선 이미지 센서 | |
EP2012181B1 (en) | Radiation image conversion panel, scintillator panel, and radiation image sensor | |
JP2009025075A (ja) | 放射線用シンチレータパネルおよびフラットパネルディテクター | |
EP2012141B1 (en) | Radiation image converting panel and radiation image sensor | |
JP2023032732A (ja) | シンチレータパネル及び放射線検出器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 16861832 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 15772201 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20187015369 Country of ref document: KR Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2016861832 Country of ref document: EP |