JP2008294461A - 液相エッチング装置 - Google Patents
液相エッチング装置 Download PDFInfo
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- JP2008294461A JP2008294461A JP2008183012A JP2008183012A JP2008294461A JP 2008294461 A JP2008294461 A JP 2008294461A JP 2008183012 A JP2008183012 A JP 2008183012A JP 2008183012 A JP2008183012 A JP 2008183012A JP 2008294461 A JP2008294461 A JP 2008294461A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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Abstract
【解決手段】真空チェンバー10と、前記真空チェンバー内に備えられ、真空雰囲気で、被処理物30に化学反応性液体を吹き付けるノズル50機構を有する液相エッチング装置であって、少なくとも前記ノズル機構が、耐腐食性処理されており、前記耐腐食性処理が、前記ノズル機構の露出部に前記液体に対する腐食耐性を有する物質の薄膜を形成する処理であって、前記処理が、プラズマを用いた表面処理であることを特徴とする液相エッチング装置。
【選択図】図1
Description
本発明の一実施の形態を、実施例1を用いて説明する。図1は、実施の形態に用いる液相エッチング装置を説明する図である。以下、図1を参照しながら、実施例1に係るエッチング装置の概略を説明する。真空チェンバー10には真空を作り出すための真空ポンプ20が接続されている。真空チェンバー10内に、保持台40と複数のノズル50が設置される。保持台40は、固体もしくは固体の集合体あるいはジェル状の物体などの被処理物30を保持できる。ノズル50は、所望の液体を供給する液体供給装置60に接続されており、被処理物30に化学反応性の液体70を粒子状にして吹き付けることが出来る。被処理物30をエッチング出来る種々の液体70の内から、それぞれの被処理物に適した溶剤を選択して使用する。
ズル50からおよそ時速1000km以上の速度で液体70を吹き付ける。吹き付けられた液体が被処理物表面31に付着すると同時にエッチングが行われる。被処理物表面31と液体70の関係で界面活性剤を利用する事によって液体が被処理物表面31に行き渡り均質なエッチングに効果を発揮する。被処理物表面31での液体70のヌレ性が悪い場合には、界面活性剤を非処理物表面に吹き付けることによって、液体70が被処理物の表面31の全体に行き渡り、エッチングが均一に行われる。
一部の液体成分が高いエネルギーを得てプラズマ化する事がある。このようにして発生するプラズマは被処理物表面を活性化させ、エッチング速度を一層加速させる効果がある。
20 真空ポンプ
30 被処理物
31 被処理物表面
40 保持台
50 ノズル
51 超音速ノズル
52 マイクロノズル
60 液体供給装置
70 液体
71 軌道を回転した液体
80 界面活性剤供給装置
81 吹き出し部
90 シリコンウエーハ
100 薄膜
101 エッチング処理された薄膜
110 フォトレジスト
111 耐腐食性のフォトレジスト
120 プラズマ
130 被覆物質
131 パターニングされた被覆物質
140 荷電機構
150 電圧印加機構
160 磁界印加機構
170 チップ
Claims (10)
- 真空チェンバーと、前記真空チェンバー内に備えられ、真空雰囲気で、被処理物に化学反応性液体を吹き付けるノズル機構を有する液相エッチング装置であって、少なくとも前記ノズル機構が、耐腐食性処理されており、前記耐腐食性処理が、前記ノズル機構の露出部に前記液体に対する腐食耐性を有する物質の薄膜を形成する処理であって、前記処理が、プラズマを用いた表面処理であることを特徴とする液相エッチング装置。
- さらに、前記被処理物の保持台と、前記ノズル機構の出口に設けられる荷電機構と、前記保持台に電圧を印加する電圧印加機構とを有し、前記荷電機構は吹き出された前記液体の粒子に電荷を与え、前記電圧印加機構は電荷を与えられた前記液体粒子を加速することが出来る請求項1記載の液相エッチング装置。
- 磁界印加機構をさらに有し、前記磁界印加機構は、前記液体粒子の軌道を制御することが出来ることを特徴とする請求項1記載の液相エッチング装置。
- 液体供給装置をさらに有し、前記液体供給装置は、前記ノズル機構に対し、前記液体を連続的または間歇的に供給することを特徴とする請求項1記載の液相エッチング装置。
- 界面活性剤供給機構をさらに有し、前記界面活性剤供給機構は、前記被処理物に界面活性剤を吹き付ける吹き出し部と、前記吹き出し部に前記界面活性剤を供給する供給装置を有することを特徴とする請求項1記載の液相エッチング装置。
- 前記真空雰囲気が、1E−3Torrより高真空の真空雰囲気であることを特徴とする請求項1記載の液相エッチング装置。
- 前記ノズル機構は、被処理物に化学反応性液体を時速1万Km以上で吹き付けるように構成された請求項1記載の液相エッチング装置。
- 前記ノズル機構は、前記被処理物に、前記液体を、クリティカルディメンジョンの大きさよりも小さな液体粒子として吹き付けるように構成された請求項1記載の液相エッチング装置。
- 前記ノズル機構は、前記液体の粒子に電荷を与える工程と、前記荷電された液体粒子に電界または磁界を作用させ、前記対象物の表面に前記液体粒子を加速誘引あるいは減速させて衝突させるように構成された請求項1記載の液相エッチング装置。
エッチング方法。 - 保持機構を有し、前記保持機構と電気的に絶縁される前記被処理物については、前記被処理物の表面に必要な電子を供給するように構成された請求項9記載の液相エッチング装置。
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US (2) | US7378031B2 (ja) |
JP (2) | JP4680058B2 (ja) |
CN (1) | CN100370588C (ja) |
TW (1) | TW200425327A (ja) |
WO (1) | WO2004075278A1 (ja) |
Cited By (2)
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WO2020203521A1 (ja) * | 2019-03-29 | 2020-10-08 | 国立研究開発法人産業技術総合研究所 | 電子部品の製造方法 |
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US8177993B2 (en) * | 2006-11-05 | 2012-05-15 | Globalfoundries Singapore Pte Ltd | Apparatus and methods for cleaning and drying of wafers |
JP5592083B2 (ja) | 2009-06-12 | 2014-09-17 | アイメック | 基板処理方法およびそれを用いた半導体装置の製造方法 |
US8860424B1 (en) * | 2011-03-10 | 2014-10-14 | Solar Junction Corporation | Apparatus and method for highly accelerated life testing of solar cells |
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JP2020155614A (ja) * | 2019-03-20 | 2020-09-24 | 株式会社Screenホールディングス | 基板処理装置、基板処理方法、および、半導体製造方法 |
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CN114574862B (zh) * | 2022-03-03 | 2022-09-02 | 东莞赛诺高德蚀刻科技有限公司 | 一种风力辅助非等深结构蚀刻加工装置及加工方法 |
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- 2004-02-23 CN CNB2004800041468A patent/CN100370588C/zh not_active Expired - Fee Related
- 2004-02-23 JP JP2005502805A patent/JP4680058B2/ja not_active Expired - Fee Related
- 2004-02-23 US US10/546,015 patent/US7378031B2/en not_active Expired - Fee Related
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WO2020203521A1 (ja) * | 2019-03-29 | 2020-10-08 | 国立研究開発法人産業技術総合研究所 | 電子部品の製造方法 |
CN111031691A (zh) * | 2019-12-24 | 2020-04-17 | 瞿勇 | 一种利用真空现象进行蚀刻电路板的装置 |
Also Published As
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TWI315085B (ja) | 2009-09-21 |
US20060049140A1 (en) | 2006-03-09 |
JP4680058B2 (ja) | 2011-05-11 |
WO2004075278A1 (ja) | 2004-09-02 |
CN1751383A (zh) | 2006-03-22 |
US7378031B2 (en) | 2008-05-27 |
US20080196834A1 (en) | 2008-08-21 |
JPWO2004075278A1 (ja) | 2006-06-01 |
CN100370588C (zh) | 2008-02-20 |
WO2004075278A9 (ja) | 2005-05-26 |
JP4845936B2 (ja) | 2011-12-28 |
TW200425327A (en) | 2004-11-16 |
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