WO2004075278A9 - 液相エッチング方法および液相エッチング装置 - Google Patents
液相エッチング方法および液相エッチング装置Info
- Publication number
- WO2004075278A9 WO2004075278A9 PCT/JP2004/002073 JP2004002073W WO2004075278A9 WO 2004075278 A9 WO2004075278 A9 WO 2004075278A9 JP 2004002073 W JP2004002073 W JP 2004002073W WO 2004075278 A9 WO2004075278 A9 WO 2004075278A9
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- liquid
- spraying
- phase etching
- liquid phase
- etching
- Prior art date
Links
- 238000005530 etching Methods 0.000 title claims abstract description 107
- 239000007788 liquid Substances 0.000 title claims abstract description 99
- 238000000034 method Methods 0.000 title claims abstract description 46
- 239000000463 material Substances 0.000 claims abstract description 20
- 238000007664 blowing Methods 0.000 claims abstract 4
- 239000007791 liquid phase Substances 0.000 claims description 37
- 238000005507 spraying Methods 0.000 claims description 29
- 230000007797 corrosion Effects 0.000 claims description 15
- 238000005260 corrosion Methods 0.000 claims description 15
- 239000002245 particle Substances 0.000 claims description 15
- 239000000126 substance Substances 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 13
- 239000004094 surface-active agent Substances 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 9
- 230000005684 electric field Effects 0.000 claims description 6
- 239000010408 film Substances 0.000 claims description 5
- 239000007921 spray Substances 0.000 claims description 4
- 238000009834 vaporization Methods 0.000 claims description 4
- 230000008016 vaporization Effects 0.000 claims description 4
- 230000035939 shock Effects 0.000 claims description 3
- 230000001133 acceleration Effects 0.000 claims description 2
- 230000007423 decrease Effects 0.000 claims 1
- 230000001939 inductive effect Effects 0.000 claims 1
- 239000007787 solid Substances 0.000 abstract description 17
- 239000004065 semiconductor Substances 0.000 description 22
- 238000010586 diagram Methods 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 239000000758 substrate Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000010419 fine particle Substances 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- 239000003513 alkali Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000003993 interaction Effects 0.000 description 3
- 230000003213 activating effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
Definitions
- the present invention relates to a liquid phase etching method and a liquid phase etching apparatus.
- the present invention is a technical field of processing a surface of an object to be processed such as a solid, and a field of forming a fine shape, for example, manufacturing of a semiconductor device, an EMS (Micro-Electro-Mechanic a System) device, and the like.
- the present invention relates to a liquid phase etching method and a liquid crystal etching apparatus according to the above. Background art
- a semiconductor is processed into a desired shape by irradiating a reactive gas onto a semiconductor surface in a plasma state.
- a vacuum pump 2 for generating a vacuum is connected to the vacuum chamber 11.
- An object to be processed for example, a silicon wafer 3 is placed in the vacuum chamber 1 and a desired gas is introduced. After that, a plasma 4 is generated to generate an interaction with the surface of the object to be processed, and the object is processed.
- the workpiece is etched.
- the reason for using plasma for etching is to enable the anisotropy of etching in order to meet the demand for higher precision in fine processing.
- the etching method according to the present invention is characterized in that a chemically reactive liquid is sprayed at a predetermined speed onto a solid or an aggregate of solids or a jell-shaped object as an object to be processed to perform etching.
- the etching method of the present invention also includes spraying a chemically reactive liquid by using a nozzle mechanism on an object to be processed installed in a vacuum chamber, wherein the degree of vacuum when processing the object to be processed is as follows: It is characterized in that the degree of vacuum is sufficient to prevent the generation of shock waves, etc. exceeding the speed of sound when the liquid is jetted.
- the etching method of the present invention further comprises applying an electric charge to the ejected liquid particles to apply an electric field to the liquid particles charged on the surface of the solid, the aggregate of solids, or the jewel-shaped object to be processed. Alternatively, it is characterized by acceleration and attraction or deceleration by a magnetic field to cause collision.
- the etching method of the present invention further comprises the step of covering a part of the surface of the solid or the solid aggregate with a resin material or the like to form a mask, and spraying a chemically reactive liquid on a portion exposed from the mask to form the solid or the solid aggregate. Is selectively processed.
- An etching apparatus is characterized by having a mechanism for holding an object to be processed and a nozzle structure for spraying a chemically reactive liquid onto the held object to be processed.
- FIG. 1 is a conceptual sectional view of a liquid phase etching apparatus according to an embodiment of the present invention.
- FIGS. 2A to 2D are process diagrams showing other processing steps according to the embodiment of the present invention.
- 3A to 3C are process diagrams showing other processing steps according to the embodiment of the present invention.
- FIG. 4 is a conceptual cross-sectional view of the liquid phase etching apparatus according to the embodiment of the present invention.
- FIG. 5 is a conceptual sectional view of still another liquid phase etching apparatus according to the embodiment of the present invention.
- FIG. 6 is a conceptual sectional view of still another liquid phase etching apparatus according to the embodiment of the present invention.
- FIG. 7 is a conceptual sectional view of another liquid phase etching apparatus according to the embodiment of the present invention.
- FIG. 8 is a conceptual sectional view of another liquid phase etching apparatus according to the embodiment of the present invention.
- FIG. 9 is a cross-sectional view of the structure of a conventional plasma etching apparatus. BEST MODE FOR CARRYING OUT THE INVENTION
- the present invention is mainly based on the technology of spraying a liquid onto an object to be processed at an extremely high speed.
- High-speed etching by using a liquid (2) Anisotropic etching by using a plasma, This feature simultaneously realizes both of these features, and can provide processing technology that enables high-speed processing and possesses extremely sharp anisotropy.
- the present invention makes it possible to convert the current "etching process" using plasma to processing in a liquid phase with high throughput, thereby increasing productivity by several to one orders of magnitude.
- the semiconductor industry requires enormous investment in manufacturing equipment. It is very difficult to realize a chip price that matches the investment, and it is extremely difficult to respond to the so-called silicon cycle. Therefore, if the etching processing time can be improved by an order of magnitude, it is expected that productivity will be improved and the industrial structure will be completely changed.
- embodiments of the present invention will be described with reference to the drawings. In each figure, the same numbers are given to portions having the same basic function.
- FIG. 1 is a diagram illustrating a liquid phase etching apparatus used in the embodiment.
- a vacuum pump 20 for generating a vacuum is connected to the vacuum chamber 10.
- Keep in vacuum chamber 10 A support 40 and a plurality of nozzles 50 are installed.
- the holding table 40 can hold an object to be processed 30 such as a solid, a solid aggregate, or a girder-shaped object.
- the nozzle 50 is connected to a liquid supply device 60 that supplies a desired liquid, and is capable of spraying the chemically reactive liquid 70 in a particulate form onto the processing object 30.
- a solvent suitable for each object to be processed is selected and used from various liquids 70 capable of etching the object to be processed 30.
- the vacuum chamber is maintained at a degree of vacuum (ie, low pressure) higher than about I E-3 Tor, and the liquid 70 is sprayed from the nozzle 50 at a speed of more than 100 km / h.
- the sprayed liquid 70 adheres to the surface 31 of the workpiece and is etched at the same time.
- a surfactant is sprayed onto the surface of the non-treated material from the spraying section 81 of the surfactant supply device 80.
- the surfactant may be sprayed before or simultaneously with the spraying of the liquid 70, or may be sprayed immediately after the spraying of the liquid 70. Due to the presence of the surfactant, the liquid 70 spreads over the surface 31 to be processed, and the etching is performed uniformly.
- the liquid 70 is accelerated to a speed of 10,000 km / h or more and reaches the object 30 to be processed, some liquid components may obtain high energy and turn into plasma.
- the generated plasma has the effect of activating the surface 31 to be processed and further accelerating the etching processing speed.
- the material for forming the nozzle is not always a substance having excellent corrosion resistance. If the nozzle is made of a material that does not have sufficient corrosion resistance, form the nozzle body using a material suitable for processing the nozzle, and then directly contact the etching liquid on the surface with a corrosion-resistant substance. Need to be coated. The coating is performed by directly irradiating the nozzle surface with plasma mainly composed of a desired corrosion-resistant substance, or by applying plasma that reacts with a base substance to produce a corrosion-resistant substance on the nozzle surface. Irradiation. By coating the nozzle surface with a corrosion-resistant substance, it is possible to greatly improve the corrosion resistance to the etching solution used. Next, another processing step according to the embodiment of the present invention will be described using Example 2. FIG.
- FIGS. 2A-2D are process diagrams showing a process using a photoresist according to the second embodiment as a mask and a semiconductor as an object to be processed
- FIGS. 3A-3D are masks using the coating material according to the second embodiment as a mask.
- FIG. 4 is a process diagram showing processing when a semiconductor is used as an object to be processed
- FIG. 4 is a diagram illustrating an etching apparatus according to the second embodiment when a semiconductor is used as an object to be processed.
- Example 2 a nozzle 50 for forming fine particles smaller than 0.2 micron and a supersonic nozzle (Supersonic Nozzle) 51 for forming liquid fine particles at a higher speed as shown in FIG. Use the provided etching equipment.
- the supersonic nozzle sprays liquid fine particles at a speed of 100 km / h or more. More preferably, the liquid fine particles are sprayed at a speed of at least 300 km / h.
- the semiconductor substrate to be processed will be described with reference to FIG.
- a silicon wafer 90 on which a thin film 100 of a substance necessary for forming a semiconductor element is formed is used as an example of the semiconductor substrate.
- the semiconductor substrates to be processed include a silicon substrate, a silicon oxide film, a silicon nitride film, a rare earth oxide film, and a silicon substrate on which a metal film such as aluminum or copper is formed.
- Various liquids can be used for etching the thin film 100 of the material to be processed, but a solvent suitable for the material of the semiconductor substrate to be processed is selected and used.
- the degree of vacuum in the vacuum chamber 10 is maintained at a degree higher than about 1 E-3 Torr, and the liquid 70 is sprayed from the nozzle 50 at a speed of about 100 km / h or more. Etching is performed at the same time that the sprayed liquid adheres to the surface 31 of the workpiece.
- a surfactant in the relationship between the surface 31 of the workpiece and the liquid 70 the liquid spreads over the surface 31 of the workpiece and exerts an effect on uniform etching. If the liquid 70 on the surface 31 of the workpiece has poor wetting properties, the liquid 70 spreads over the entire surface 31 of the workpiece by spraying a surfactant onto the surface of the non-processed workpiece. The etching is performed uniformly.
- the liquid 70 when the liquid 70 reaches the object at a high speed exceeding approximately 10,000 km / h, some liquid components may obtain high energy and turn into plasma.
- the plasma generated in this way has the effect of activating the surface of the object to be processed and further accelerating the etching speed.
- a photoresist 110 is formed on the thin film 100, and the photoresist is used as a mask, and a process with a desired pattern and dimensions is performed by a so-called lithography method. Can be realized.
- lithography method a process with a desired pattern and dimensions is performed by a so-called lithography method.
- the plasma 120 considers the case of a plasma using a rare gas, the interaction with the material constituting the photoresist 110, and the interaction with the etching liquid 70 such as a solvent, an acid, or an alkali used. To determine the optimal plasma. Depending on the combination of the solvent used and the etching solution 70 such as an acid or an alkali, a photoresist 110 mainly composed of an organic substance may not always be able to obtain sufficient corrosion resistance.
- a coating material 130 composed of a material having sufficient corrosion resistance is applied to the surface of the object 100 to be treated, and the coating material 130 is Liquid phase etching is performed using the mask.
- the object to be processed corresponds to the thin film 100 formed on the surface of the silicon substrate 90.
- the coating material 130 is etched using an etchant 70 such as a solvent, an acid, or an alkali capable of etching the coating material 130.
- an etchant 70 such as a solvent, an acid, or an alkali capable of etching the coating material 130.
- an etching solution 7 such as a solvent, an acid, or an alkali for etching the workpiece 100 in the vacuum chamber 10.
- 0 is sprayed from the supersonic nozzle 51 to subject the object to be processed 100 to liquid phase etching and perform desired processing.
- the vacuum chamber in the vacuum chamber 10 is maintained at a degree of vacuum (that is, low pressure) higher than 1 E-3 Torr, and the liquid is discharged from the nozzle 50 at a speed of 100 km / h or more at a speed of 100 km / h or more. Spray.
- the reason why the degree of vacuum is maintained as described above is to prevent the generation of shock waves or the like exceeding the speed of sound when the chemically reactive liquid is jetted.
- a semiconductor substrate and a thin film to be processed can be processed very finely according to a mask pattern. Further, still another processing step according to the embodiment of the present invention will be described using a third embodiment.
- the formation of an overhang or taper of an etching groove deteriorates processing accuracy. Therefore, there is a strong demand for an etching method in which a trench is dug vertically from a flat solid surface.
- FIG. 5 is a diagram illustrating an etching apparatus according to a third embodiment of the present invention in which an electric field is applied to accelerate the liquid 70 by applying an electric field
- FIG. 6 is a diagram illustrating a magnetic field applied to the vacuum chamber according to the third embodiment of the present invention.
- FIG. 9 is a diagram for explaining an etching apparatus in which a liquid 70 is accelerated in a rotation direction by adding liquid.
- a charging mechanism 140 is provided at or near the outlet of the nozzle 50 to apply a charge to the micronized liquid (ie, liquid particles) 70 to be ejected.
- a voltage application mechanism 150 capable of applying a voltage to a holding table for holding a semiconductor solid is provided.
- the liquid 70 blown out from the nozzle 50 is given a charge by the charging mechanism 140, accelerated by the voltage applying mechanism 150, and reaches the workpiece 30.
- the voltage that can be applied is limited by the discharge and leakage due to the structure of the device and the electrical characteristics of the liquid used. This problem will be described later in a fifth embodiment.
- the liquid 71 can be accelerated in the rotation direction, and the moving trajectory can be changed. Yes, you can freely control the direction. It is a liquid whose orbit is rotated up to 7 U.
- FIG. 7 is a diagram illustrating a structure of an etching apparatus according to a fourth embodiment of the present invention, in which a nozzle is provided for each semiconductor chip.
- FIG. 7 It is a figure explaining the etching device in which the nozzle was installed.
- a plurality of chips 170 are formed at intervals of about 1 cm.
- the variation in the angle of the liquid 70 can be minimized. It is also possible to further reduce the effect of angle changes by installing multiple nozzles for each chip.
- a nozzle 52 made by applying MEMS or micromachining may be used, and the nozzles may be arranged at intervals of several microns.
- the nozzle can be spread over the area corresponding to the entire surface area of the object to be processed, or the nozzle can be etched by installing a fixed area nozzle and moving the nozzle itself or the object to be processed. The entire surface of the processed object can be etched.
- each nozzle is enlarged.
- still another processing step according to the embodiment of the present invention will be described using Example 5.
- the time required for the liquid used for etching to evaporate in the vacuum chamber 10 varies depending on the characteristics of the etching solution such as a solvent, acid, or alkali used for liquid phase etching.
- the liquid supply device 60 has an intermittent ejection circuit or an intermittent ejection device (not shown), and intermittently ejects the liquid from the nozzle. Therefore, it is desirable to provide a time period necessary for the liquid that is once blown out and then supplied to the etching to evaporate.
- the spraying of the chemically reactive liquid is preferably performed at a supersonic speed, but may be performed at a speed at which some or most of the liquid components are turned into plasma.
- the present invention provides a liquid-etching method in which a liquid used for etching is sprayed onto an object at a high speed, and provides fine processing performance such as anisotropy of dry etching. While maintaining this, the etching rate can be greatly improved.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/546,015 US7378031B2 (en) | 2003-02-21 | 2004-02-23 | Liquid phase etching method and liquid phase etching apparatus |
JP2005502805A JP4680058B2 (ja) | 2003-02-21 | 2004-02-23 | 液相エッチング方法 |
US12/109,623 US20080196834A1 (en) | 2003-02-21 | 2008-04-25 | Liquid phase etching method and liquid phase etching apparatus |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003044550 | 2003-02-21 | ||
JP2003-044550 | 2003-02-21 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/109,623 Division US20080196834A1 (en) | 2003-02-21 | 2008-04-25 | Liquid phase etching method and liquid phase etching apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004075278A1 WO2004075278A1 (ja) | 2004-09-02 |
WO2004075278A9 true WO2004075278A9 (ja) | 2005-05-26 |
Family
ID=32905455
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2004/002073 WO2004075278A1 (ja) | 2003-02-21 | 2004-02-23 | 液相エッチング方法および液相エッチング装置 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7378031B2 (ja) |
JP (2) | JP4680058B2 (ja) |
CN (1) | CN100370588C (ja) |
TW (1) | TW200425327A (ja) |
WO (1) | WO2004075278A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8177993B2 (en) * | 2006-11-05 | 2012-05-15 | Globalfoundries Singapore Pte Ltd | Apparatus and methods for cleaning and drying of wafers |
JP5592083B2 (ja) * | 2009-06-12 | 2014-09-17 | アイメック | 基板処理方法およびそれを用いた半導体装置の製造方法 |
US8860424B1 (en) * | 2011-03-10 | 2014-10-14 | Solar Junction Corporation | Apparatus and method for highly accelerated life testing of solar cells |
CN104064638B (zh) * | 2014-06-26 | 2017-12-15 | 圆融光电科技有限公司 | Led透明导电层的粗化方法及真空设备 |
CN105063922B (zh) * | 2015-07-15 | 2017-03-29 | 苏州市丹纺纺织研发有限公司 | 一种紊流式整烫装置 |
JP2017059654A (ja) * | 2015-09-16 | 2017-03-23 | 富士通株式会社 | 回路基板、回路基板の製造方法及び電子デバイス実装装置の製造方法 |
JP2020155614A (ja) * | 2019-03-20 | 2020-09-24 | 株式会社Screenホールディングス | 基板処理装置、基板処理方法、および、半導体製造方法 |
JP6623349B1 (ja) * | 2019-03-29 | 2019-12-25 | 国立研究開発法人産業技術総合研究所 | 電子部品の製造方法 |
KR102619877B1 (ko) | 2019-09-11 | 2024-01-03 | 삼성전자주식회사 | 기판 처리 장치 |
CN111031691B (zh) * | 2019-12-24 | 2022-11-22 | 前海益科电子(深圳)有限公司 | 一种利用真空现象进行蚀刻电路板的装置 |
CN111704364B (zh) * | 2020-06-30 | 2022-11-25 | 福建省卓成环保科技有限公司 | 用于化学法生产局部磨砂玻璃的腐蚀装置及其腐蚀方法 |
CN115724591A (zh) * | 2021-08-31 | 2023-03-03 | 广东艾檬电子科技有限公司 | 基于电场控制的微孔加工方法 |
CN114574862B (zh) * | 2022-03-03 | 2022-09-02 | 东莞赛诺高德蚀刻科技有限公司 | 一种风力辅助非等深结构蚀刻加工装置及加工方法 |
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US7393385B1 (en) * | 2007-02-28 | 2008-07-01 | Corning Incorporated | Apparatus and method for electrostatically depositing aerosol particles |
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- 2004-02-23 CN CNB2004800041468A patent/CN100370588C/zh not_active Expired - Fee Related
- 2004-02-23 US US10/546,015 patent/US7378031B2/en not_active Expired - Fee Related
- 2004-02-23 JP JP2005502805A patent/JP4680058B2/ja not_active Expired - Fee Related
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TW200425327A (en) | 2004-11-16 |
US20080196834A1 (en) | 2008-08-21 |
WO2004075278A1 (ja) | 2004-09-02 |
US7378031B2 (en) | 2008-05-27 |
JP4845936B2 (ja) | 2011-12-28 |
CN1751383A (zh) | 2006-03-22 |
US20060049140A1 (en) | 2006-03-09 |
JP4680058B2 (ja) | 2011-05-11 |
TWI315085B (ja) | 2009-09-21 |
JPWO2004075278A1 (ja) | 2006-06-01 |
CN100370588C (zh) | 2008-02-20 |
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