JP2008277751A - 半導体装置の製造方法、および半導体装置 - Google Patents

半導体装置の製造方法、および半導体装置 Download PDF

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Publication number
JP2008277751A
JP2008277751A JP2008029858A JP2008029858A JP2008277751A JP 2008277751 A JP2008277751 A JP 2008277751A JP 2008029858 A JP2008029858 A JP 2008029858A JP 2008029858 A JP2008029858 A JP 2008029858A JP 2008277751 A JP2008277751 A JP 2008277751A
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Prior art keywords
semiconductor device
bonding
wire
ball
wires
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JP2008029858A
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Japanese (ja)
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JP2008277751A5 (enrdf_load_stackoverflow
Inventor
Akira Koga
彰 小賀
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Panasonic Corp
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Panasonic Corp
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Priority to JP2008029858A priority Critical patent/JP2008277751A/ja
Priority to US12/060,484 priority patent/US20080246129A1/en
Publication of JP2008277751A publication Critical patent/JP2008277751A/ja
Priority to US12/929,160 priority patent/US20110151622A1/en
Publication of JP2008277751A5 publication Critical patent/JP2008277751A5/ja
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  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Wire Bonding (AREA)
JP2008029858A 2007-04-04 2008-02-12 半導体装置の製造方法、および半導体装置 Withdrawn JP2008277751A (ja)

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US12/060,484 US20080246129A1 (en) 2007-04-04 2008-04-01 Method of manufacturing semiconductor device and semiconductor device
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010238946A (ja) * 2009-03-31 2010-10-21 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP2012044034A (ja) * 2010-08-20 2012-03-01 Stanley Electric Co Ltd 半導体発光装置および半導体発光装置の製造方法
US8692370B2 (en) 2009-02-27 2014-04-08 Semiconductor Components Industries, Llc Semiconductor device with copper wire ball-bonded to electrode pad including buffer layer
WO2014132826A1 (ja) * 2013-03-01 2014-09-04 住友電気工業株式会社 半導体装置
JP2015146393A (ja) * 2014-02-03 2015-08-13 カルソニックカンセイ株式会社 超音波ウェッジボンディング構造

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8008785B2 (en) * 2009-12-22 2011-08-30 Tessera Research Llc Microelectronic assembly with joined bond elements having lowered inductance
CN102339766A (zh) * 2010-07-22 2012-02-01 上海华虹Nec电子有限公司 线路修复中的超长距离连线方法
CN102820236B (zh) * 2011-06-08 2015-08-26 无锡华润安盛科技有限公司 一种预塑封引线框的引线键合方法
JP6824448B2 (ja) * 2018-02-07 2021-02-03 三菱電機株式会社 ウェッジツール、ボンディング装置、および、ボンディング検査方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8692370B2 (en) 2009-02-27 2014-04-08 Semiconductor Components Industries, Llc Semiconductor device with copper wire ball-bonded to electrode pad including buffer layer
JP2010238946A (ja) * 2009-03-31 2010-10-21 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP2012044034A (ja) * 2010-08-20 2012-03-01 Stanley Electric Co Ltd 半導体発光装置および半導体発光装置の製造方法
WO2014132826A1 (ja) * 2013-03-01 2014-09-04 住友電気工業株式会社 半導体装置
JP2015146393A (ja) * 2014-02-03 2015-08-13 カルソニックカンセイ株式会社 超音波ウェッジボンディング構造

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