CN102339766A - 线路修复中的超长距离连线方法 - Google Patents
线路修复中的超长距离连线方法 Download PDFInfo
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- CN102339766A CN102339766A CN2010102335887A CN201010233588A CN102339766A CN 102339766 A CN102339766 A CN 102339766A CN 2010102335887 A CN2010102335887 A CN 2010102335887A CN 201010233588 A CN201010233588 A CN 201010233588A CN 102339766 A CN102339766 A CN 102339766A
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- metal
- long distance
- connection method
- wire
- method during
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010102335887A CN102339766A (zh) | 2010-07-22 | 2010-07-22 | 线路修复中的超长距离连线方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010102335887A CN102339766A (zh) | 2010-07-22 | 2010-07-22 | 线路修复中的超长距离连线方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN102339766A true CN102339766A (zh) | 2012-02-01 |
Family
ID=45515415
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010102335887A Pending CN102339766A (zh) | 2010-07-22 | 2010-07-22 | 线路修复中的超长距离连线方法 |
Country Status (1)
Country | Link |
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CN (1) | CN102339766A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107800398A (zh) * | 2017-11-17 | 2018-03-13 | 中电科技集团重庆声光电有限公司 | 一种控制声表面波器件引线键合点根部微损伤的键合方法 |
CN110729208A (zh) * | 2019-10-12 | 2020-01-24 | 闳康技术检测(上海)有限公司 | 一种高密度打线复位方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020068442A1 (en) * | 2000-12-04 | 2002-06-06 | Fujitsu Limited | Method for manufacturing a semiconductor device |
US20040217488A1 (en) * | 2003-05-02 | 2004-11-04 | Luechinger Christoph B. | Ribbon bonding |
CN1889244A (zh) * | 2006-08-04 | 2007-01-03 | 北京中星微电子有限公司 | 一种聚焦离子束修改集成电路的方法及集成电路 |
CN2886804Y (zh) * | 2006-03-08 | 2007-04-04 | 上海华虹集成电路有限责任公司 | 便于fib修改时定位的集成电路版图结构 |
CN1983541A (zh) * | 2005-12-13 | 2007-06-20 | 天水华天科技股份有限公司 | 长引线低弧度高密度金丝球焊生产方法 |
CN1992196A (zh) * | 2005-12-30 | 2007-07-04 | 宜特科技股份有限公司 | 修改制作电路的方法 |
CN101281876A (zh) * | 2007-04-04 | 2008-10-08 | 松下电器产业株式会社 | 半导体器件的制造方法以及半导体器件 |
-
2010
- 2010-07-22 CN CN2010102335887A patent/CN102339766A/zh active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020068442A1 (en) * | 2000-12-04 | 2002-06-06 | Fujitsu Limited | Method for manufacturing a semiconductor device |
US20040217488A1 (en) * | 2003-05-02 | 2004-11-04 | Luechinger Christoph B. | Ribbon bonding |
CN1983541A (zh) * | 2005-12-13 | 2007-06-20 | 天水华天科技股份有限公司 | 长引线低弧度高密度金丝球焊生产方法 |
CN1992196A (zh) * | 2005-12-30 | 2007-07-04 | 宜特科技股份有限公司 | 修改制作电路的方法 |
CN2886804Y (zh) * | 2006-03-08 | 2007-04-04 | 上海华虹集成电路有限责任公司 | 便于fib修改时定位的集成电路版图结构 |
CN1889244A (zh) * | 2006-08-04 | 2007-01-03 | 北京中星微电子有限公司 | 一种聚焦离子束修改集成电路的方法及集成电路 |
CN101281876A (zh) * | 2007-04-04 | 2008-10-08 | 松下电器产业株式会社 | 半导体器件的制造方法以及半导体器件 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107800398A (zh) * | 2017-11-17 | 2018-03-13 | 中电科技集团重庆声光电有限公司 | 一种控制声表面波器件引线键合点根部微损伤的键合方法 |
CN110729208A (zh) * | 2019-10-12 | 2020-01-24 | 闳康技术检测(上海)有限公司 | 一种高密度打线复位方法 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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TA01 | Transfer of patent application right |
Effective date of registration: 20140108 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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C12 | Rejection of a patent application after its publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20120201 |