JP2008262206A - フォトレジスト組成物およびこれを用いた薄膜トランジスタ基板の製造方法 - Google Patents
フォトレジスト組成物およびこれを用いた薄膜トランジスタ基板の製造方法 Download PDFInfo
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- JP2008262206A JP2008262206A JP2008103960A JP2008103960A JP2008262206A JP 2008262206 A JP2008262206 A JP 2008262206A JP 2008103960 A JP2008103960 A JP 2008103960A JP 2008103960 A JP2008103960 A JP 2008103960A JP 2008262206 A JP2008262206 A JP 2008262206A
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- dyes
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- binder resin
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- 229920005989 resin Polymers 0.000 claims abstract description 56
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- -1 photoacid generator Substances 0.000 claims abstract description 55
- 239000011230 binding agent Substances 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 31
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- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
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- 125000003342 alkenyl group Chemical group 0.000 description 3
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- 125000003710 aryl alkyl group Chemical group 0.000 description 3
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- 239000003054 catalyst Substances 0.000 description 3
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- VPVSTMAPERLKKM-UHFFFAOYSA-N glycoluril Chemical class N1C(=O)NC2NC(=O)NC21 VPVSTMAPERLKKM-UHFFFAOYSA-N 0.000 description 1
- 229960001867 guaiacol Drugs 0.000 description 1
- 150000002391 heterocyclic compounds Chemical class 0.000 description 1
- CAYGQBVSOZLICD-UHFFFAOYSA-N hexabromobenzene Chemical compound BrC1=C(Br)C(Br)=C(Br)C(Br)=C1Br CAYGQBVSOZLICD-UHFFFAOYSA-N 0.000 description 1
- CKAPSXZOOQJIBF-UHFFFAOYSA-N hexachlorobenzene Chemical compound ClC1=C(Cl)C(Cl)=C(Cl)C(Cl)=C1Cl CKAPSXZOOQJIBF-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical class I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- OVWYEQOVUDKZNU-UHFFFAOYSA-N m-tolualdehyde Chemical compound CC1=CC=CC(C=O)=C1 OVWYEQOVUDKZNU-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000005641 methacryl group Chemical group 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- BKFQHFFZHGUTEZ-UHFFFAOYSA-N methyl 2-butoxyacetate Chemical compound CCCCOCC(=O)OC BKFQHFFZHGUTEZ-UHFFFAOYSA-N 0.000 description 1
- QBVBLLGAMALJGB-UHFFFAOYSA-N methyl 2-butoxypropanoate Chemical compound CCCCOC(C)C(=O)OC QBVBLLGAMALJGB-UHFFFAOYSA-N 0.000 description 1
- PPFNAOBWGRMDLL-UHFFFAOYSA-N methyl 2-ethoxyacetate Chemical compound CCOCC(=O)OC PPFNAOBWGRMDLL-UHFFFAOYSA-N 0.000 description 1
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- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 1
- DMHHINXESLPPMV-UHFFFAOYSA-N methyl 3-propoxypropanoate Chemical compound CCCOCCC(=O)OC DMHHINXESLPPMV-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
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- 229920002866 paraformaldehyde Polymers 0.000 description 1
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- 230000000704 physical effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- JGUCHBHVJZMDEK-UHFFFAOYSA-N propanoic acid;1-propoxypropane Chemical compound CCC(O)=O.CCCOCCC JGUCHBHVJZMDEK-UHFFFAOYSA-N 0.000 description 1
- 125000006233 propoxy propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])OC([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- LVDAGIFABMFXSJ-UHFFFAOYSA-N propyl 2-butoxyacetate Chemical compound CCCCOCC(=O)OCCC LVDAGIFABMFXSJ-UHFFFAOYSA-N 0.000 description 1
- GYOCIFXDRJJHPF-UHFFFAOYSA-N propyl 2-butoxypropanoate Chemical compound CCCCOC(C)C(=O)OCCC GYOCIFXDRJJHPF-UHFFFAOYSA-N 0.000 description 1
- GXKPKHWZTLSCIB-UHFFFAOYSA-N propyl 2-ethoxypropanoate Chemical compound CCCOC(=O)C(C)OCC GXKPKHWZTLSCIB-UHFFFAOYSA-N 0.000 description 1
- ILVGAIQLOCKNQA-UHFFFAOYSA-N propyl 2-hydroxypropanoate Chemical compound CCCOC(=O)C(C)O ILVGAIQLOCKNQA-UHFFFAOYSA-N 0.000 description 1
- FIABMSNMLZUWQH-UHFFFAOYSA-N propyl 2-methoxyacetate Chemical compound CCCOC(=O)COC FIABMSNMLZUWQH-UHFFFAOYSA-N 0.000 description 1
- CYIRLFJPTCUCJB-UHFFFAOYSA-N propyl 2-methoxypropanoate Chemical compound CCCOC(=O)C(C)OC CYIRLFJPTCUCJB-UHFFFAOYSA-N 0.000 description 1
- HJIYVZIALQOKQI-UHFFFAOYSA-N propyl 3-butoxypropanoate Chemical compound CCCCOCCC(=O)OCCC HJIYVZIALQOKQI-UHFFFAOYSA-N 0.000 description 1
- IYVPXMGWHZBPIR-UHFFFAOYSA-N propyl 3-ethoxypropanoate Chemical compound CCCOC(=O)CCOCC IYVPXMGWHZBPIR-UHFFFAOYSA-N 0.000 description 1
- KNCDNPMGXGIVOM-UHFFFAOYSA-N propyl 3-hydroxypropanoate Chemical compound CCCOC(=O)CCO KNCDNPMGXGIVOM-UHFFFAOYSA-N 0.000 description 1
- JCMFJIHDWDKYIL-UHFFFAOYSA-N propyl 3-methoxypropanoate Chemical compound CCCOC(=O)CCOC JCMFJIHDWDKYIL-UHFFFAOYSA-N 0.000 description 1
- YTUFRRBSSNRYID-UHFFFAOYSA-N propyl 3-propoxypropanoate Chemical compound CCCOCCC(=O)OCCC YTUFRRBSSNRYID-UHFFFAOYSA-N 0.000 description 1
- 229940090181 propyl acetate Drugs 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 125000000547 substituted alkyl group Chemical group 0.000 description 1
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- KUCOHFSKRZZVRO-UHFFFAOYSA-N terephthalaldehyde Chemical compound O=CC1=CC=C(C=O)C=C1 KUCOHFSKRZZVRO-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- MLGCXEBRWGEOQX-UHFFFAOYSA-N tetradifon Chemical compound C1=CC(Cl)=CC=C1S(=O)(=O)C1=CC(Cl)=C(Cl)C=C1Cl MLGCXEBRWGEOQX-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 229960000790 thymol Drugs 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- FRGPKMWIYVTFIQ-UHFFFAOYSA-N triethoxy(3-isocyanatopropyl)silane Chemical compound CCO[Si](OCC)(OCC)CCCN=C=O FRGPKMWIYVTFIQ-UHFFFAOYSA-N 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-M triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-M 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- MDTPTXSNPBAUHX-UHFFFAOYSA-M trimethylsulfanium;hydroxide Chemical compound [OH-].C[S+](C)C MDTPTXSNPBAUHX-UHFFFAOYSA-M 0.000 description 1
- KOFQUBYAUWJFIT-UHFFFAOYSA-M triphenylsulfanium;hydroxide Chemical compound [OH-].C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 KOFQUBYAUWJFIT-UHFFFAOYSA-M 0.000 description 1
- CYTQZYFSRPGOJK-UHFFFAOYSA-N tris(2,3-dibromo-3-chloropropyl) phosphate Chemical compound ClC(Br)C(Br)COP(=O)(OCC(Br)C(Cl)Br)OCC(Br)C(Cl)Br CYTQZYFSRPGOJK-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Materials For Photolithography (AREA)
- Phenolic Resins Or Amino Resins (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
【解決手段】本発明のフォトレジスト組成物は、第1のバインダー樹脂、第2のバインダー樹脂、光酸発生剤、架橋剤、および溶媒を含む。該フォトレジスト組成物は、フォトレジストパターンの耐熱性および接着性に優れるので、薄膜トランジスタ基板の開口率が増大し、表示品質を改善することができる。よって、該フォトレジスト組成物は、薄膜トランジスタ基板を製造するための4マスク工程に好適に用いられうる。
【選択図】図10
Description
本発明の好ましい実施形態に係るフォトレジスト組成物は、下記化学式1で示される繰り返し単位を含むバインダー樹脂1〜70質量部と、下記化学式2で示される繰り返し単位を含むバインダー樹脂1〜70質量部と、光酸発生剤0.5〜10質量部と、架橋剤1〜20質量部と、溶媒10〜200質量部とを含む;
本発明の好ましい実施形態に係る薄膜トランジスタ基板の製造方法は、ゲートラインおよびゲート電極が形成されたベース基板上にゲート絶縁膜、アクティブ層、およびデータ金属層を順次形成する段階と、前記データ金属層上に上記の本発明のフォトレジスト組成物を塗布してフォトレジスト膜を形成する段階と、前記フォトレジスト膜を露光および現像して第1フォトレジストパターンを形成する段階と、前記第1フォトレジストパターンをマスクとして利用して前記データ金属層および前記アクティブ層をエッチングしてデータラインおよびチャンネル部を形成する段階と、前記第1フォトレジストパターンの一部を除去して前記データ金属層の一部を露出させる第2フォトレジストパターンを形成する段階と、前記第2フォトレジストパターンを利用して前記データ金属層および前記アクティブ層をエッチングしてソース電極、ドレイン電極、およびオーミックコンタクトパターンを形成する段階とを含む。
<合成例1>
冷却管および攪拌装置を付したフラスコに、m−クレゾール400g、p−クレゾール600g、サリチル酸アルデヒド300g、およびシュウ酸二水和物3.20gを入れて95〜100℃に維持しながら2時間反応させた。その後、100〜105℃で2時間にかけて水を留去し、さらに180℃で10〜30mmHgに減圧することによって、未反応のモノマーおよび水を除去した。これを室温に戻すことによって、ノボラック樹脂I 500gを得た(重量平均分子量7000)。
冷却管および攪拌装置を付したフラスコに、m−クレゾール400g、p−クレゾール600g、37%ホルマリン460g、およびシュウ酸二水和物3.49gを入れて95〜100℃に維持しながら2時間反応させた。その後、100〜105℃で2時間にかけて水を留去し、さらに180℃で10〜30mmHgに減圧することによって、未反応のモノマーおよび水を除去した。これを室温に戻すことによって、アルカリ可溶性のノボラック樹脂II 515gを得た(重量平均分子量4000)。
バインダー樹脂として上記合成例1で合成したノボラック樹脂I 30gおよび上記合成例1で合成したノボラック樹脂II 70g、光酸発生剤として下記化学式4で示される化合物2g、架橋剤としてヘキサメチロールメラミンヘキサメチルエーテル5g、アゾ系色素としてUV yellow 1549 0.6g、アミン添加剤としてトリオクチルアミン1g、溶媒としてプロピレングリコールメチルエーテルプロピオネート400gを混合することによって、フォトレジスト組成物(A)を調製した。
バインダー樹脂として、ノボラック樹脂I 70gおよびノボラック樹脂II 30gを用いたこと以外は、実施例1と同様の方法でフォトレジスト組成物(B)を調製した。
下記化学式5で示される化合物3gをさらに含むこと以外は、実施例1と同様の方法でフォトレジスト組成物(C)を調製した。
上記化学式5で示される化合物6gをさらに含むこと以外は、実施例1と同様の方法でフォトレジスト組成物(D)を調製した。
上記化学式5で示される化合物9gをさらに含むこと以外は、実施例1と同様の方法でフォトレジスト組成物(E)を調製した。
バインダー樹脂としてノボラック樹脂II 100gのみを用いたこと以外は、実施例1と同様の方法でフォトレジスト組成物(F)を調製した。
バインダー樹脂としてノボラック樹脂I 100gのみを用いたこと以外は、実施例1と同様の方法でフォトレジスト組成物(G)を調製した。
[リフロー温度およびスキュー長の測定]
実施例1〜5、比較例1および2のフォトレジスト組成物(A)〜(G)をそれぞれ基板上に塗布してフォトレジスト膜を形成し、これを露光および現像(現像速度25秒)してフォトレジストパターンを形成した。形成されたフォトレジストパターンを加熱して、フォトレジストパターンのリフロー温度を測定した。また、リン酸、硝酸、および酢酸を含むエッチング液を用いて、フォトレジストパターンに対するメタルエッチングテスト(スプレー、40℃、65秒)を行い、各フォトレジストパターンのスキュー長を測定した。なお、スキュー長とは、フォトレジストのエンド端から下部メタル層のエンド端までの距離を意味する。結果を表1に示す。
[走査電子顕微鏡写真]
図9は、従来の技術によるポジティブフォトレジスト組成物(SLDP−5、東進セミケム株式会社製)を利用して形成されたフォトレジストパターンの走査電子顕微鏡写真であり、図10は、実施例3のフォトレジスト組成物を用いて形成されたフォトレジストパターンを用いて形成された走査電子顕微鏡写真である。
120 ゲートパターン、
122 ゲートライン、
124 ゲート電極、
130 ゲート絶縁膜、
140 アクティブ層、
142 半導体層、
144 オーミックコンタクト層、
146 チャンネル部、
148 オーミックコンタクトパターン、
150 データ金属層、
155 データライン、
156 ソース/ドレイン金属パターン、
157 ソース電極、
158 ドレイン電極、
160 第1フォトレジストパターン、
162 第2フォトレジストパターン、
170 保護膜、
172 コンタクトホール、
180 画素電極、
CR チャンネル形成領域、
P 画素、
TFT 薄膜トランジスタ。
Claims (13)
- 下記化学式1で示される繰り返し単位を含む第1のバインダー樹脂1〜70質量部と、
下記化学式2で示される繰り返し単位を含む第2のバインダー樹脂(ただし、第1のバインダー樹脂を除く)1〜70質量部と、
光酸発生剤0.5〜10質量部と、
架橋剤1〜20質量部と、
溶媒10〜200質量部とを含むフォトレジスト組成物;
- 前記第1のバインダー樹脂は、m−クレゾール、p−クレゾール、およびサリチル酸アルデヒド(salicylic aldehyde)を反応させて得られることを特徴とする、請求項1に記載のフォトレジスト組成物。
- 前記第2のバインダー樹脂は、m−クレゾール、p−クレゾール、およびホルムアルデヒドを反応させて得られることを特徴とする、請求項1または2に記載のフォトレジスト組成物。
- 前記第1のバインダー樹脂および化学式2で示される繰り返し単位を含むバインダー樹脂の重量平均分子量が、1000〜10000であることを特徴とする、請求項1〜3のいずれか1項に記載のフォトレジスト組成物。
- 前記光酸発生剤は、オニウム塩、ハロゲン化有機化合物、キノンジアジド化合物、ビス(スルホニル)ジアゾメタン系化合物、スルホン化合物、有機酸エステル化合物、有機酸アミド化合物、および有機酸イミド化合物からなる群から選択される少なくとも1種を含むことを特徴とする、請求項1〜4のいずれか1項に記載のフォトレジスト組成物。
- 前記架橋剤は、アルコキシメチル化尿素樹脂、アルコキシメチル化メラミン樹脂、アルコキシメチル化ウロン樹脂、およびアルコキシメチル化グリコールウリル樹脂からなる群から選択される少なくとも1種を含むことを特徴とする、請求項1〜5のいずれか1項に記載のフォトレジスト組成物。
- 前記溶媒は、グリコールエーテル、エチレングリコールアルキルエーテルアセテート、およびジエチレングリコールからなる群から選択される少なくとも1種を含むことを特徴とする、請求項1〜6のいずれか1項に記載のフォトレジスト組成物。
- 下記化学式3で示される低分子フェノール化合物0.1〜10質量部をさらに含むことを特徴とする、請求項1〜7のいずれか1項に記載のフォトレジスト組成物;
- ピラゾールアゾ系色素、アニリノアゾ系色素、アリールアゾ系色素、トリフェニルメタン系色素、アントラキノン系色素、アントラピリドン系色素、ベンジリデン系色素、オキソノール系色素、ピラゾールトリアゾールアゾ系色素、ピリドンアゾ系色素、シアニン系色素、フェニチアジン系色素、ピロールピラゾールアゾメチン系色素、キサンテン系色素、フタロシアニン系色素、ベンゾピラン系色素、およびインジゴ系色素からなる群から選択される少なくとも1種を含む色素0.1〜5質量部をさらに含むことを特徴とする、請求項1〜8のいずれか1項に記載のフォトレジスト組成物。
- 接着増進剤、界面活性剤、および酸拡散抑制剤からなる群から選択される少なくとも1種を含む添加剤0.1〜10質量部をさらに含むことを特徴とする、請求項1〜9のいずれか1項に記載のフォトレジスト組成物。
- ゲートラインおよびゲート電極が形成されたベース基板上にゲート絶縁膜、アクティブ層、およびデータ金属層を順次形成する段階と、
前記データ金属層上に請求項1〜10のいずれか1項に記載のフォトレジスト組成物を塗布してフォトレジスト膜を形成する段階と、
前記フォトレジスト膜を露光および現像して第1フォトレジストパターンを形成する段階と、
前記第1フォトレジストパターンをマスクとして利用して前記データ金属層および前記アクティブ層をエッチングしてデータラインおよびチャンネル部を形成する段階と、
前記第1フォトレジストパターンの一部を除去して前記データ金属層の一部を露出させる第2フォトレジストパターンを形成する段階と、
前記第2フォトレジストパターンを利用して前記データ金属層および前記アクティブ層をエッチングしてソース電極、ドレイン電極、およびオーミックコンタクトパターンを形成する段階とを含む薄膜トランジスタ基板の製造方法。 - 前記第1フォトレジストパターンが、チャンネル形成領域を有し、前記チャンネル形成領域の前記第1フォトレジストパターンは、前記チャンネル形成領域を除く領域の前記第1フォトレジストパターンよりも厚みが薄いことを特徴とする、請求項11に記載の製造方法。
- 前記データ金属層は、ウェットエッチング工程によってエッチングされることを特徴とする、請求項11または12に記載の製造方法。
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010079672A1 (ja) * | 2009-01-09 | 2010-07-15 | 昭和高分子株式会社 | ノボラック樹脂および熱硬化性樹脂組成物 |
JP2010191423A (ja) * | 2009-02-11 | 2010-09-02 | Samsung Electronics Co Ltd | 薄膜トランジスタ表示板の製造方法およびこれに使用されるネガティブフォトレジスト組成物 |
JP2013108056A (ja) * | 2011-10-25 | 2013-06-06 | Shin-Etsu Chemical Co Ltd | 変性ノボラック型フェノール樹脂及びその製造方法並びにレジスト材料 |
JP2013134346A (ja) * | 2011-12-26 | 2013-07-08 | Hitachi Chemical Co Ltd | 感光性樹脂組成物、パターン硬化膜の製造方法、半導体装置及び電子部品 |
JP2016139149A (ja) * | 2016-04-04 | 2016-08-04 | 日立化成株式会社 | 感光性樹脂組成物、パターン硬化膜の製造方法、半導体装置及び電子部品 |
JP2018028690A (ja) * | 2017-10-31 | 2018-02-22 | 日立化成株式会社 | 感光性樹脂組成物、パターン硬化膜の製造方法、半導体装置及び電子部品 |
JP2018139321A (ja) * | 2008-10-24 | 2018-09-06 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2018139320A (ja) * | 2008-10-24 | 2018-09-06 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20110045418A (ko) * | 2009-10-27 | 2011-05-04 | 삼성전자주식회사 | 포토레지스트 조성물 및 이를 이용한 표시 기판의 제조 방법 |
KR20110129692A (ko) * | 2010-05-26 | 2011-12-02 | 삼성전자주식회사 | 포토레지스트 조성물 및 이를 이용한 포토레지스트 패턴의 형성 방법 |
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TWI467334B (zh) * | 2012-08-29 | 2015-01-01 | Chi Mei Corp | 正型感光性樹脂組成物及其圖案形成方法 |
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WO2021146138A1 (en) * | 2020-01-15 | 2021-07-22 | Lam Research Corporation | Underlayer for photoresist adhesion and dose reduction |
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CN112180682A (zh) * | 2020-08-14 | 2021-01-05 | 陕西彩虹新材料有限公司 | 一种表面性能优越的正性光刻胶添加剂 |
CN113692157B (zh) * | 2021-08-10 | 2023-07-04 | Oppo广东移动通信有限公司 | 壳体、其制备方法及电子设备 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10274853A (ja) * | 1997-03-27 | 1998-10-13 | Tokyo Ohka Kogyo Co Ltd | パターン形成方法およびこれに用いるネガ型ホトレジスト組成物 |
JP2000206684A (ja) * | 1999-01-18 | 2000-07-28 | Nagase Denshi Kagaku Kk | ネガ型感放射線性樹脂組成物 |
WO2001061410A1 (fr) * | 2000-02-21 | 2001-08-23 | Zeon Corporation | Composition de resist |
JP2006317584A (ja) * | 2005-05-11 | 2006-11-24 | Tokyo Ohka Kogyo Co Ltd | g線、i線、KrFエキシマレーザーおよび電子線から選ばれる少なくとも2種の露光光源を用いて露光する工程に用いられるネガ型レジスト組成物およびレジストパターン形成方法 |
JP2007058216A (ja) * | 2005-08-23 | 2007-03-08 | Samsung Electronics Co Ltd | フォトレジスト組成物及びこれを用いる薄膜トランジスタ基板の製造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5216111A (en) * | 1986-12-23 | 1993-06-01 | Shipley Company Inc. | Aromatic novolak resins and blends |
DE69604114T2 (de) * | 1995-04-10 | 2000-03-02 | Shipley Co | Gemische von photoaktiven Zusammensetzungen enthaltendes Fotoresist |
US5709977A (en) * | 1995-07-13 | 1998-01-20 | Fuji Photo Film Co., Ltd. | Positive working photoresist composition |
US5656413A (en) | 1995-09-28 | 1997-08-12 | Hoechst Celanese Corporation | Low metal ion containing 4,4'-[1-[4-[1-(4-Hydroxyphenyl)-1-methylethyl]phenyl]ethylidene]bisphe nol and photoresist compositions therefrom |
JP3929653B2 (ja) * | 1999-08-11 | 2007-06-13 | 富士フイルム株式会社 | ネガ型レジスト組成物 |
KR100846085B1 (ko) | 2001-10-31 | 2008-07-14 | 주식회사 동진쎄미켐 | 액정표시장치 회로용 포토레지스트 조성물 |
US6790582B1 (en) | 2003-04-01 | 2004-09-14 | Clariant Finance Bvi Limited | Photoresist compositions |
JP4569119B2 (ja) * | 2004-02-09 | 2010-10-27 | Jsr株式会社 | 突起および/またはスペーサー形成用の感放射線性樹脂組成物並びに突起および/またはスペーサーの形成方法 |
KR101240643B1 (ko) * | 2005-07-08 | 2013-03-08 | 삼성디스플레이 주식회사 | 포토레지스트 조성물, 상기 포토레지스트 조성물을 이용한 패턴의 형성 방법 및 이를 이용한 박막 트랜지스터표시판의 제조 방법 |
KR101197223B1 (ko) * | 2005-09-09 | 2012-11-02 | 엘지디스플레이 주식회사 | 반사투과형 액정표시장치용 어레이 기판 및 그 제조방법 |
JP2007142388A (ja) * | 2005-11-17 | 2007-06-07 | Samsung Electronics Co Ltd | 薄膜トランジスタ表示板及びその製造方法 |
-
2007
- 2007-04-13 KR KR1020070036565A patent/KR101392291B1/ko active IP Right Grant
-
2008
- 2008-04-11 JP JP2008103960A patent/JP5129003B2/ja active Active
- 2008-04-11 TW TW097113388A patent/TWI494689B/zh active
- 2008-04-11 US US12/082,436 patent/US7638253B2/en not_active Expired - Fee Related
- 2008-04-14 CN CN2008101277073A patent/CN101295135B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10274853A (ja) * | 1997-03-27 | 1998-10-13 | Tokyo Ohka Kogyo Co Ltd | パターン形成方法およびこれに用いるネガ型ホトレジスト組成物 |
JP2000206684A (ja) * | 1999-01-18 | 2000-07-28 | Nagase Denshi Kagaku Kk | ネガ型感放射線性樹脂組成物 |
WO2001061410A1 (fr) * | 2000-02-21 | 2001-08-23 | Zeon Corporation | Composition de resist |
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KR20080092761A (ko) | 2008-10-16 |
JP5129003B2 (ja) | 2013-01-23 |
KR101392291B1 (ko) | 2014-05-07 |
US7638253B2 (en) | 2009-12-29 |
CN101295135B (zh) | 2013-01-23 |
TWI494689B (zh) | 2015-08-01 |
US20080254634A1 (en) | 2008-10-16 |
TW200907572A (en) | 2009-02-16 |
CN101295135A (zh) | 2008-10-29 |
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