JP2008244018A5 - - Google Patents

Download PDF

Info

Publication number
JP2008244018A5
JP2008244018A5 JP2007080301A JP2007080301A JP2008244018A5 JP 2008244018 A5 JP2008244018 A5 JP 2008244018A5 JP 2007080301 A JP2007080301 A JP 2007080301A JP 2007080301 A JP2007080301 A JP 2007080301A JP 2008244018 A5 JP2008244018 A5 JP 2008244018A5
Authority
JP
Japan
Prior art keywords
semiconductor device
manufacturing
oxygen
substrate
transition metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007080301A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008244018A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007080301A priority Critical patent/JP2008244018A/ja
Priority claimed from JP2007080301A external-priority patent/JP2008244018A/ja
Publication of JP2008244018A publication Critical patent/JP2008244018A/ja
Publication of JP2008244018A5 publication Critical patent/JP2008244018A5/ja
Pending legal-status Critical Current

Links

JP2007080301A 2007-03-26 2007-03-26 半導体装置の製造方法 Pending JP2008244018A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007080301A JP2008244018A (ja) 2007-03-26 2007-03-26 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007080301A JP2008244018A (ja) 2007-03-26 2007-03-26 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2008244018A JP2008244018A (ja) 2008-10-09
JP2008244018A5 true JP2008244018A5 (zh) 2010-01-21

Family

ID=39915019

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007080301A Pending JP2008244018A (ja) 2007-03-26 2007-03-26 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP2008244018A (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5096294B2 (ja) * 2008-11-08 2012-12-12 独立行政法人科学技術振興機構 抵抗変化型不揮発性メモリー素子
JP2010199104A (ja) * 2009-02-23 2010-09-09 National Institute For Materials Science ノンポーラ型不揮発性メモリー素子
JP2010251352A (ja) * 2009-04-10 2010-11-04 Panasonic Corp 不揮発性記憶素子及びその製造方法
JP2013510438A (ja) * 2009-11-06 2013-03-21 ラムバス・インコーポレーテッド 三次元メモリアレイ積層構造体
JP5390715B2 (ja) * 2010-12-01 2014-01-15 キヤノンアネルバ株式会社 不揮発性記憶素子およびその製造方法
WO2012169194A1 (ja) 2011-06-08 2012-12-13 株式会社アルバック 抵抗変化素子の製造方法およびその製造装置
JPWO2013069274A1 (ja) 2011-11-10 2015-04-02 パナソニック株式会社 有機表示パネル、有機表示装置、有機発光装置、それらの製造方法、および薄膜形成方法
US20150056373A1 (en) 2012-08-09 2015-02-26 Ulvac, Inc. Deposition method and deposition apparatus
JP6230184B2 (ja) * 2013-10-10 2017-11-15 株式会社アルバック 成膜装置、成膜方法及び金属酸化物薄膜の製造方法
JP2015157996A (ja) * 2014-02-25 2015-09-03 東京エレクトロン株式会社 遷移金属膜の酸化処理方法および酸化処理装置
WO2016094010A1 (en) * 2014-12-09 2016-06-16 Symetrix Memory, Llc Transition metal oxide resistive switching device with doped buffer region

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2587426B2 (ja) * 1987-08-21 1997-03-05 石塚電子株式会社 薄膜サ−ミスタの製造方法
JPH0193088A (ja) * 1987-10-02 1989-04-12 Fujitsu Ltd 強誘電薄膜の形成方法
KR100363081B1 (ko) * 1999-09-16 2002-11-30 삼성전자 주식회사 박막 형성장치
JP2005203463A (ja) * 2004-01-14 2005-07-28 Sharp Corp 不揮発性半導体記憶装置
WO2005101420A1 (en) * 2004-04-16 2005-10-27 Matsushita Electric Industrial Co. Ltd. Thin film memory device having a variable resistance
JP4358760B2 (ja) * 2005-02-10 2009-11-04 日本電信電話株式会社 ＬｉＮｂＯ３結晶薄膜成膜方法
JP2007042784A (ja) * 2005-08-02 2007-02-15 Nippon Telegr & Teleph Corp <Ntt> 金属酸化物素子及びその製造方法

Similar Documents

Publication Publication Date Title
JP2008244018A5 (zh)
JP2006156608A5 (zh)
WO2007147020A3 (en) Cobalt precursors useful for forming cobalt-containing films on substrates
EP1555700A3 (en) Method for manufacturing a nonvolatile memory device with a variable resistor
US20070048990A1 (en) Method of buffer layer formation for RRAM thin film deposition
JP2019009307A5 (zh)
US20070238246A1 (en) Resistance random access memory devices and method of fabrication
SG141351A1 (en) Epitaxial ferroelectric and magnetic recording structures including graded lattice matching layers
TW200746388A (en) Complex oxide laminate, method of manufacturing complex oxide laminate, and device
JP2006524439A5 (zh)
WO2008142768A1 (ja) 半導体装置およびその製造方法
WO2007142167A8 (en) Semiconductor device including an oxide semiconductor thin film layer of zinc oxide and manufacturing method thereof
JP2008034814A5 (zh)
EP1905086A4 (en) METHOD FOR FORMING A MULTILAYER BINAROIDIDE FILM FOR USE IN RESISTANCE DIRECT ACCESS MEMORY
JP2011521477A5 (zh)
JP2011049539A5 (zh)
JP2011009728A5 (zh)
NO20073230L (no) Fremgangsmate for kontroll av krymping og porositet under sintring av flerskiktsstrukturer
TWI456629B (zh) 形成複數個間隔特徵之方法
JP2009508700A5 (zh)
WO2008136504A1 (ja) Ｉｉｉ族窒化物半導体発光素子の製造方法
WO2011084297A3 (en) Silicon thin film solar cell having improved underlayer coating
WO2007101136A3 (en) High-throughput formation of semiconductor layer by use of chalcogen and inter-metallic material
DE602005015374D1 (de) Verfahren zur Herstellung eines piezoelektrischen Films, laminierte Struktur aus Substrat und piezoelektrischem Film, piezoelektrischer Aktor und Verfahren zu seiner Herstellung
TW200740289A (en) Organic electroluminescent element and its manufacturing method