JP2008226912A5 - - Google Patents

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Publication number
JP2008226912A5
JP2008226912A5 JP2007058921A JP2007058921A JP2008226912A5 JP 2008226912 A5 JP2008226912 A5 JP 2008226912A5 JP 2007058921 A JP2007058921 A JP 2007058921A JP 2007058921 A JP2007058921 A JP 2007058921A JP 2008226912 A5 JP2008226912 A5 JP 2008226912A5
Authority
JP
Japan
Prior art keywords
plate
semiconductor chip
lead
bonding electrode
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007058921A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008226912A (ja
JP5026112B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007058921A priority Critical patent/JP5026112B2/ja
Priority claimed from JP2007058921A external-priority patent/JP5026112B2/ja
Publication of JP2008226912A publication Critical patent/JP2008226912A/ja
Publication of JP2008226912A5 publication Critical patent/JP2008226912A5/ja
Application granted granted Critical
Publication of JP5026112B2 publication Critical patent/JP5026112B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2007058921A 2007-03-08 2007-03-08 半導体装置の製造方法。 Expired - Fee Related JP5026112B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007058921A JP5026112B2 (ja) 2007-03-08 2007-03-08 半導体装置の製造方法。

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007058921A JP5026112B2 (ja) 2007-03-08 2007-03-08 半導体装置の製造方法。

Publications (3)

Publication Number Publication Date
JP2008226912A JP2008226912A (ja) 2008-09-25
JP2008226912A5 true JP2008226912A5 (cg-RX-API-DMAC7.html) 2010-04-15
JP5026112B2 JP5026112B2 (ja) 2012-09-12

Family

ID=39845222

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007058921A Expired - Fee Related JP5026112B2 (ja) 2007-03-08 2007-03-08 半導体装置の製造方法。

Country Status (1)

Country Link
JP (1) JP5026112B2 (cg-RX-API-DMAC7.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5026113B2 (ja) * 2007-03-08 2012-09-12 オンセミコンダクター・トレーディング・リミテッド 半導体装置の製造方法。
JP5996873B2 (ja) * 2012-01-19 2016-09-21 新電元工業株式会社 半導体装置の製造方法、半導体装置及び接続子

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0766357A (ja) * 1993-08-25 1995-03-10 Toshiba Corp リ−ドフレ−ムとその製造方法、及び、このリ−ドフレ−ムを用いた半導体装置
JPH1074793A (ja) * 1996-08-30 1998-03-17 Sony Corp 半導体装置と、半導体装置の製造方法と、半導体製造装置
JP3898459B2 (ja) * 2001-04-18 2007-03-28 加賀東芝エレクトロニクス株式会社 半導体装置の製造方法
JP2006032873A (ja) * 2004-07-22 2006-02-02 Toshiba Corp ストラップボンディング装置及びストラップボンディング方法

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