JP2008177551A5 - - Google Patents

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Publication number
JP2008177551A5
JP2008177551A5 JP2007318581A JP2007318581A JP2008177551A5 JP 2008177551 A5 JP2008177551 A5 JP 2008177551A5 JP 2007318581 A JP2007318581 A JP 2007318581A JP 2007318581 A JP2007318581 A JP 2007318581A JP 2008177551 A5 JP2008177551 A5 JP 2008177551A5
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JP
Japan
Prior art keywords
electrode
gain medium
cladding
oscillation element
electrical contact
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Application number
JP2007318581A
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English (en)
Japanese (ja)
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JP2008177551A (ja
JP4873746B2 (ja
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Priority to JP2007318581A priority Critical patent/JP4873746B2/ja
Priority claimed from JP2007318581A external-priority patent/JP4873746B2/ja
Publication of JP2008177551A publication Critical patent/JP2008177551A/ja
Publication of JP2008177551A5 publication Critical patent/JP2008177551A5/ja
Application granted granted Critical
Publication of JP4873746B2 publication Critical patent/JP4873746B2/ja
Expired - Fee Related legal-status Critical Current
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JP2007318581A 2006-12-21 2007-12-10 発振素子 Expired - Fee Related JP4873746B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007318581A JP4873746B2 (ja) 2006-12-21 2007-12-10 発振素子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006344565 2006-12-21
JP2006344565 2006-12-21
JP2007318581A JP4873746B2 (ja) 2006-12-21 2007-12-10 発振素子

Publications (3)

Publication Number Publication Date
JP2008177551A JP2008177551A (ja) 2008-07-31
JP2008177551A5 true JP2008177551A5 (enExample) 2010-03-04
JP4873746B2 JP4873746B2 (ja) 2012-02-08

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ID=39202173

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007318581A Expired - Fee Related JP4873746B2 (ja) 2006-12-21 2007-12-10 発振素子

Country Status (5)

Country Link
US (1) US7889015B2 (enExample)
EP (1) EP2067217B1 (enExample)
JP (1) JP4873746B2 (enExample)
CN (1) CN101512850B (enExample)
WO (1) WO2008075795A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4871816B2 (ja) 2007-08-31 2012-02-08 キヤノン株式会社 レーザ素子
JP4807707B2 (ja) * 2007-11-30 2011-11-02 キヤノン株式会社 波形情報取得装置
JP5506258B2 (ja) * 2008-08-06 2014-05-28 キヤノン株式会社 整流素子
JP5665305B2 (ja) * 2008-12-25 2015-02-04 キヤノン株式会社 分析装置
JP5632599B2 (ja) 2009-09-07 2014-11-26 キヤノン株式会社 発振器
JP5632598B2 (ja) 2009-09-07 2014-11-26 キヤノン株式会社 発振回路及び発振器
JP5612842B2 (ja) 2009-09-07 2014-10-22 キヤノン株式会社 発振器
US8532152B2 (en) * 2009-11-03 2013-09-10 Massachusetts Institute Of Technology Frequency tunable wire lasers
KR20120087631A (ko) 2011-01-28 2012-08-07 삼성전자주식회사 나노 구조화된 음향광학 소자, 및 상기 음향광학 소자를 이용한 광 스캐너, 광 변조기 및 홀로그래픽 디스플레이 장치
JP6280310B2 (ja) 2012-06-06 2018-02-14 キヤノン株式会社 発振器
JP2014175533A (ja) * 2013-03-11 2014-09-22 Canon Inc レーザ素子
JP6373010B2 (ja) 2013-03-12 2018-08-15 キヤノン株式会社 発振素子
JP2014207654A (ja) * 2013-03-16 2014-10-30 キヤノン株式会社 導波路素子
JP6464895B2 (ja) * 2015-04-03 2019-02-06 住友電気工業株式会社 量子カスケード半導体レーザ
KR101910983B1 (ko) * 2017-10-24 2018-10-23 삼성전자주식회사 나노 구조화된 음향광학 소자, 및 상기 음향광학 소자를 이용한 광 스캐너, 광 변조기 및 홀로그래픽 디스플레이 장치
US11031753B1 (en) * 2017-11-13 2021-06-08 The Government Of The United States Of America As Represented By The Secretary Of The Air Force Extracting the fundamental mode in broad area quantum cascade lasers

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JP3210159B2 (ja) 1993-12-10 2001-09-17 キヤノン株式会社 半導体レーザ、光源装置、光通信システム及び光通信方法
JPH07307530A (ja) 1994-03-17 1995-11-21 Canon Inc 偏波変調可能な半導体レーザ
US5659560A (en) 1994-05-12 1997-08-19 Canon Kabushiki Kaisha Apparatus and method for driving oscillation polarization selective light source, and optical communication system using the same
US5764670A (en) * 1995-02-27 1998-06-09 Canon Kabushiki Kaisha Semiconductor laser apparatus requiring no external modulator, method of driving semiconductor laser device, and optical communication system using the semiconductor laser apparatus
US5978397A (en) * 1997-03-27 1999-11-02 Lucent Technologies Inc. Article comprising an electric field-tunable semiconductor laser
US6301282B1 (en) 1998-07-29 2001-10-09 Lucent Technologies Inc. Long wavelength semiconductor lasers incorporating waveguides based on surface plasmons
JP2001042170A (ja) 1999-07-28 2001-02-16 Canon Inc 光配線装置、その駆動方法およびそれを用いた電子機器
US7630588B2 (en) 2003-06-25 2009-12-08 Canon Kabushiki Kaisha High frequency electrical signal control device and sensing system
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JP4136858B2 (ja) 2003-09-12 2008-08-20 キヤノン株式会社 位置検出装置、及び情報入力装置
JP2005157601A (ja) 2003-11-25 2005-06-16 Canon Inc 電磁波による積層状物体計数装置及び計数方法
JP4217646B2 (ja) 2004-03-26 2009-02-04 キヤノン株式会社 認証方法及び認証装置
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JP4250573B2 (ja) 2004-07-16 2009-04-08 キヤノン株式会社 素子
JP4546326B2 (ja) 2004-07-30 2010-09-15 キヤノン株式会社 センシング装置
JP4390147B2 (ja) 2005-03-28 2009-12-24 キヤノン株式会社 周波数可変発振器
JP4250603B2 (ja) 2005-03-28 2009-04-08 キヤノン株式会社 テラヘルツ波の発生素子、及びその製造方法
JP2006275910A (ja) 2005-03-30 2006-10-12 Canon Inc 位置センシング装置及び位置センシング方法
US7349456B2 (en) * 2005-10-07 2008-03-25 Agilent Technologies, Inc. Gain-coupled distributed quantum cascade laser
JP4773839B2 (ja) 2006-02-15 2011-09-14 キヤノン株式会社 対象物の情報を検出する検出装置
JP5132146B2 (ja) 2006-03-17 2013-01-30 キヤノン株式会社 分析方法、分析装置、及び検体保持部材
JP4481946B2 (ja) 2006-03-17 2010-06-16 キヤノン株式会社 検出素子及び画像形成装置
JP4898472B2 (ja) 2006-04-11 2012-03-14 キヤノン株式会社 検査装置
JP4709059B2 (ja) 2006-04-28 2011-06-22 キヤノン株式会社 検査装置及び検査方法
JP4857027B2 (ja) * 2006-05-31 2012-01-18 キヤノン株式会社 レーザ素子
JP5196750B2 (ja) 2006-08-25 2013-05-15 キヤノン株式会社 発振素子

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