JP2008176095A - パターン形成方法及び薄膜トランジスタの作製方法 - Google Patents
パターン形成方法及び薄膜トランジスタの作製方法 Download PDFInfo
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- JP2008176095A JP2008176095A JP2007009926A JP2007009926A JP2008176095A JP 2008176095 A JP2008176095 A JP 2008176095A JP 2007009926 A JP2007009926 A JP 2007009926A JP 2007009926 A JP2007009926 A JP 2007009926A JP 2008176095 A JP2008176095 A JP 2008176095A
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- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017177152A (ja) * | 2016-03-30 | 2017-10-05 | 古河電気工業株式会社 | レーザ光遮蔽材 |
| CN112271195A (zh) * | 2020-10-22 | 2021-01-26 | Oppo广东移动通信有限公司 | 发光元件及其制备方法、显示屏和电子设备 |
| CN112992929A (zh) * | 2019-12-17 | 2021-06-18 | 弗莱克英纳宝有限公司 | 半导体装置 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0535207A (ja) * | 1991-08-02 | 1993-02-12 | Fuji Xerox Co Ltd | Ｅｌ駆動装置 |
| JP2006106118A (ja) * | 2004-09-30 | 2006-04-20 | Semiconductor Energy Lab Co Ltd | 液晶表示装置の作製方法 |
| JP2006128650A (ja) * | 2004-09-30 | 2006-05-18 | Semiconductor Energy Lab Co Ltd | 表示装置の作製方法 |
| JP2006148082A (ja) * | 2004-10-19 | 2006-06-08 | Semiconductor Energy Lab Co Ltd | 配線基板及び半導体装置の作製方法 |
| JP2006245557A (ja) * | 2005-02-03 | 2006-09-14 | Semiconductor Energy Lab Co Ltd | 半導体装置、電子機器および半導体装置の作製方法 |
| JP2006352087A (ja) * | 2005-05-20 | 2006-12-28 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタ及び半導体デバイスの作製方法 |
-
2007
- 2007-01-19 JP JP2007009926A patent/JP2008176095A/ja not_active Withdrawn
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0535207A (ja) * | 1991-08-02 | 1993-02-12 | Fuji Xerox Co Ltd | Ｅｌ駆動装置 |
| JP2006106118A (ja) * | 2004-09-30 | 2006-04-20 | Semiconductor Energy Lab Co Ltd | 液晶表示装置の作製方法 |
| JP2006128650A (ja) * | 2004-09-30 | 2006-05-18 | Semiconductor Energy Lab Co Ltd | 表示装置の作製方法 |
| JP2006148082A (ja) * | 2004-10-19 | 2006-06-08 | Semiconductor Energy Lab Co Ltd | 配線基板及び半導体装置の作製方法 |
| JP2006245557A (ja) * | 2005-02-03 | 2006-09-14 | Semiconductor Energy Lab Co Ltd | 半導体装置、電子機器および半導体装置の作製方法 |
| JP2006352087A (ja) * | 2005-05-20 | 2006-12-28 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタ及び半導体デバイスの作製方法 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017177152A (ja) * | 2016-03-30 | 2017-10-05 | 古河電気工業株式会社 | レーザ光遮蔽材 |
| CN112992929A (zh) * | 2019-12-17 | 2021-06-18 | 弗莱克英纳宝有限公司 | 半导体装置 |
| CN112271195A (zh) * | 2020-10-22 | 2021-01-26 | Oppo广东移动通信有限公司 | 发光元件及其制备方法、显示屏和电子设备 |
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