JP2008172238A - 半導体構造および半導体構造の形成方法(フィールド・シールドを有する半導体構造およびその構造の形成方法) - Google Patents
半導体構造および半導体構造の形成方法(フィールド・シールドを有する半導体構造およびその構造の形成方法) Download PDFInfo
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Abstract
【解決手段】このフィールド・シールドは、ウエハ上で上下の絶縁分離層にはさまれている。ローカル相互接続が、上側絶縁分離層を通って延在しており、デバイスの選択されたドープした半導体領域(例えば、FETのソース/ドレイン領域またはダイオードのカソードもしくはアノード)にフィールド・シールドを接続する。例えば、BEOLで帯電している間にデバイス内に流入する電流は、ローカル相互接続によって、上側絶縁分離層を離れフィールド・シールド内へと分流される。その結果、電荷は、上側絶縁分離層内に蓄積されるのではなく、フィールド・シールドから下側絶縁分離層内へ、そしてその下の基板内に流れ込む。このフィールド・シールドはさらに、下側絶縁分離層または基板内に閉じ込められた電荷に対する防護障壁を提供する。
【選択図】図2
Description
101 基板ウエハ
102 埋込み酸化物(BOX)層
111、112 ソース/ドレイン領域
120 電荷
150 オンウエハ・ワイヤ
160 電流
200 構造
201 基板
203 第1の絶縁分離層
204 第2の絶縁分離層
205 シャロー・トレンチ・アイソレーション構造
207 トレンチ
208 スタック
211、212 ソース/ドレイン領域
213 チャネル領域
215 金属ストラップ
220 電荷
230 導電性パッド
231 誘電性側壁スペーサ
232 側壁
233 開口部
235 ローカル相互接続
260 電流
270 半導体層
275 電界効果トランジスタ
280 ゲート
300 構造
311、312 アノード/カソード
375 pn接合ダイオード
380 分離構造
Claims (14)
- 基板と、
前記基板上の第1の絶縁分離層と、
前記第1の絶縁分離層上の導電性パッドと、
前記導電性パッド上の第2の絶縁分離層と、
ドープした半導体領域を有し、前記第2の絶縁分離層上にあるデバイスとを含み、前記導電性パッドが、前記ドープした半導体領域に電気的に結合され、前記基板から電気的に絶縁されている、半導体構造。 - 前記ドープした半導体領域に隣接し、前記第2の絶縁分離層を通って前記導電性パッドまで垂直に延在し、前記導電性パッドを前記ドープした半導体領域に電気的に結合する導体をさらに含む、請求項1に記載の半導体構造。
- 前記第2の絶縁分離層内での電荷の蓄積を防止するために、前記導体が電流を前記デバイスを通過させて前記導電性パッドへと分流させ、
前記導電性パッドが、前記第1の絶縁分離層および前記基板内に蓄積される電荷から前記デバイスを保護する、請求項2に記載の半導体構造。 - 前記デバイスが電界効果トランジスタを含み、前記ドープした半導体領域が、前記電界効果トランジスタのソース/ドレイン領域を含む、請求項1に記載の半導体構造。
- 前記デバイスがダイオードを含み、前記ドープした半導体領域が、前記ダイオードのアノードおよびカソードのうちの一方を含む、請求項1に記載の半導体構造。
- 前記導体および前記ドープした半導体領域に隣接する金属ストラップをさらに含む、請求項2に記載の半導体構造。
- 基板と、
前記基板上の第1の絶縁分離層と、
前記第1の絶縁分離層上の導電性パッドと、
前記導電性パッド上の第2の絶縁分離層と、
ソース/ドレイン領域を有し、前記第2の絶縁分離層上にある電界効果トランジスタとを含み、前記導電性パッドが、前記ソース/ドレイン領域のうちの一方に電気的に結合され、前記基板から電気的に絶縁されている、半導体構造。 - 前記ソース/ドレイン領域のうちの前記一方に隣接し、前記第2の絶縁分離層を通って前記導電性パッドまで垂直に延在し、前記導電性パッドを前記ソース/ドレイン領域のうちの前記一方に電気的に結合する導体をさらに含む、請求項7に記載の半導体構造。
- 前記第2の絶縁分離層内での電荷の蓄積を防止するために、前記導体が電流を前記電界効果トランジスタを通過させて前記導電性パッドへと分流させ、
前記導電性パッドが、前記第1の絶縁分離層および前記基板内に蓄積される電荷から前記電界効果トランジスタを保護する、請求項8に記載の半導体構造。 - 前記導体および前記ソース/ドレイン領域のうちの前記一方に隣接する金属ストラップをさらに含む、請求項8に記載の半導体構造。
- 基板と、前記基板上の第1の絶縁分離層と、前記第1の絶縁分離層上の導電層と、前記導電層上の第2の絶縁分離層と、前記第2の絶縁分離層上の半導体層とを含むウエハを準備するステップと、
前記第1の絶縁分離層上にスタックを形成するために、前記ウエハにおいて前記半導体層を通り前記第1の絶縁分離層までトレンチをエッチングするステップと、
前記スタックの側壁に隣接してスペーサを形成するステップと、
前記スペーサの前記形成ステップの後で、前記トレンチを誘電材料で充填するステップと、
前記側壁に隣接して開口部を設けるために前記スペーサを選択的に除去するステップと、
前記開口部に導体を堆積させるステップと、
前記第2の絶縁分離層の上方に半導体デバイスを形成するステップとを含み、前記半導体デバイスの前記形成ステップがドープした半導体領域を前記導体に隣接して形成するステップを含む、半導体構造の形成方法。 - 前記導体と前記ドープした半導体領域とを接続する金属ストラップを形成するステップをさらに含む、請求項11に記載の方法。
- 基板と、前記基板上の第1の絶縁分離層と、前記第1の絶縁分離層上の導電層と、前記導電層上の第2の絶縁分離層と、前記第2の絶縁分離層上の半導体層とを含むウエハを準備するステップと、
前記第1の絶縁分離層上にスタックを形成するために、前記ウエハにおいて前記半導体層を通り前記第1の絶縁分離層までトレンチをエッチングするステップと、
導体を含むスペーサを前記スタックの側壁に隣接して形成するステップと、
前記スペーサの前記形成ステップの後で、前記トレンチを誘電材料で充填するステップと、
前記第2の絶縁分離層の上方にデバイスを形成するステップとを含み、前記デバイスの前記形成ステップがドープした半導体領域を前記導体に隣接して形成するステップを含む、半導体構造の形成方法。 - 前記導体と前記ドープした半導体領域に隣接して金属ストラップを形成するステップをさらに含む、請求項13に記載の方法。
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- 2008-01-14 CN CN2008100015887A patent/CN101226923B/zh not_active Expired - Fee Related
- 2008-05-28 US US12/127,850 patent/US20090127595A1/en not_active Abandoned
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WO2017061544A1 (en) * | 2015-10-07 | 2017-04-13 | Inter-University Research Institute Corporation High Energy Accelerator Research Organization | Radiation-damage-compensation-circuit and soi-mosfet |
US10418985B2 (en) | 2015-10-07 | 2019-09-17 | Inter-University Research Institute Corporation | Radiation-damage-compensation-circuit and SOI-MOSFET |
Also Published As
Publication number | Publication date |
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US20080265316A1 (en) | 2008-10-30 |
JP5505895B2 (ja) | 2014-05-28 |
US20090127595A1 (en) | 2009-05-21 |
US7400015B1 (en) | 2008-07-15 |
CN101226923B (zh) | 2012-03-21 |
US20080169518A1 (en) | 2008-07-17 |
CN101226923A (zh) | 2008-07-23 |
US20100047972A1 (en) | 2010-02-25 |
US7932134B2 (en) | 2011-04-26 |
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