JP2008140956A - 露光装置 - Google Patents

露光装置 Download PDF

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Publication number
JP2008140956A
JP2008140956A JP2006325229A JP2006325229A JP2008140956A JP 2008140956 A JP2008140956 A JP 2008140956A JP 2006325229 A JP2006325229 A JP 2006325229A JP 2006325229 A JP2006325229 A JP 2006325229A JP 2008140956 A JP2008140956 A JP 2008140956A
Authority
JP
Japan
Prior art keywords
exposure
wavelength
light
light source
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006325229A
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English (en)
Japanese (ja)
Other versions
JP2008140956A5 (enExample
Inventor
Tadahiro Asaishi
忠弘 浅石
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2006325229A priority Critical patent/JP2008140956A/ja
Priority to US11/877,482 priority patent/US7456934B2/en
Priority to TW096140486A priority patent/TW200827940A/zh
Priority to KR1020070110095A priority patent/KR20080050305A/ko
Publication of JP2008140956A publication Critical patent/JP2008140956A/ja
Publication of JP2008140956A5 publication Critical patent/JP2008140956A5/ja
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2006325229A 2006-12-01 2006-12-01 露光装置 Pending JP2008140956A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006325229A JP2008140956A (ja) 2006-12-01 2006-12-01 露光装置
US11/877,482 US7456934B2 (en) 2006-12-01 2007-10-23 Exposure apparatus and device manufacturing method
TW096140486A TW200827940A (en) 2006-12-01 2007-10-26 Exposure apparatus and device manufacturing method
KR1020070110095A KR20080050305A (ko) 2006-12-01 2007-10-31 노광장치 및 디바이스의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006325229A JP2008140956A (ja) 2006-12-01 2006-12-01 露光装置

Publications (2)

Publication Number Publication Date
JP2008140956A true JP2008140956A (ja) 2008-06-19
JP2008140956A5 JP2008140956A5 (enExample) 2009-01-22

Family

ID=39475312

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006325229A Pending JP2008140956A (ja) 2006-12-01 2006-12-01 露光装置

Country Status (4)

Country Link
US (1) US7456934B2 (enExample)
JP (1) JP2008140956A (enExample)
KR (1) KR20080050305A (enExample)
TW (1) TW200827940A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011166143A (ja) * 2010-02-12 2011-08-25 Asml Netherlands Bv リソグラフィ装置及び方法
JP2017522582A (ja) * 2014-06-04 2017-08-10 サイマー リミテッド ライアビリティ カンパニー パルス光ビームのスペクトル特徴推定
WO2023135658A1 (ja) * 2022-01-11 2023-07-20 ギガフォトン株式会社 電子デバイスの製造方法、レーザ装置、及び波長シーケンス算出システム

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8149319B2 (en) * 2007-12-03 2012-04-03 Ricoh Co., Ltd. End-to-end design of electro-optic imaging systems for color-correlated objects
CN109616405A (zh) * 2018-12-05 2019-04-12 上海华力微电子有限公司 半导体刻蚀工艺真空腔体设备及刻蚀方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2619473B2 (ja) * 1987-06-17 1997-06-11 株式会社日立製作所 縮小投影露光方法
JPH11135426A (ja) * 1998-08-17 1999-05-21 Nikon Corp 回路パターンの製造方法
WO2002093700A1 (en) * 2001-05-11 2002-11-21 Cymer, Inc. Laser spectral engineering for lithographic process
WO2003011595A2 (en) * 2001-07-27 2003-02-13 Cymer, Inc. Laser spectral engineering for lithographic process
WO2005046011A2 (en) * 2003-11-03 2005-05-19 Cymer, Inc. Relax gas discharge laser lithography light source
WO2006009905A1 (en) * 2004-06-23 2006-01-26 Cymer, Inc. Laser output beam wavefront splitter for bandwidth spectrum control
JP2006179935A (ja) * 2004-12-23 2006-07-06 Asml Netherlands Bv リソグラフィ装置、エキシマ・レーザ及びデバイス製造方法
JP2006179937A (ja) * 2004-12-23 2006-07-06 Asml Netherlands Bv リソグラフィ装置、エキシマ・レーザ、およびデバイス製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4937619A (en) 1986-08-08 1990-06-26 Hitachi, Ltd. Projection aligner and exposure method
JP3175180B2 (ja) * 1990-03-09 2001-06-11 キヤノン株式会社 露光方法及び露光装置
US5097291A (en) * 1991-04-22 1992-03-17 Nikon Corporation Energy amount control device
JP2852169B2 (ja) 1993-02-25 1999-01-27 日本電気株式会社 投影露光方法および装置
JPH11162824A (ja) 1997-12-02 1999-06-18 Sony Corp 露光装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2619473B2 (ja) * 1987-06-17 1997-06-11 株式会社日立製作所 縮小投影露光方法
JPH11135426A (ja) * 1998-08-17 1999-05-21 Nikon Corp 回路パターンの製造方法
WO2002093700A1 (en) * 2001-05-11 2002-11-21 Cymer, Inc. Laser spectral engineering for lithographic process
WO2003011595A2 (en) * 2001-07-27 2003-02-13 Cymer, Inc. Laser spectral engineering for lithographic process
WO2005046011A2 (en) * 2003-11-03 2005-05-19 Cymer, Inc. Relax gas discharge laser lithography light source
WO2006009905A1 (en) * 2004-06-23 2006-01-26 Cymer, Inc. Laser output beam wavefront splitter for bandwidth spectrum control
JP2006179935A (ja) * 2004-12-23 2006-07-06 Asml Netherlands Bv リソグラフィ装置、エキシマ・レーザ及びデバイス製造方法
JP2006179937A (ja) * 2004-12-23 2006-07-06 Asml Netherlands Bv リソグラフィ装置、エキシマ・レーザ、およびデバイス製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011166143A (ja) * 2010-02-12 2011-08-25 Asml Netherlands Bv リソグラフィ装置及び方法
US8717540B2 (en) 2010-02-12 2014-05-06 Asml Netherlands B.V. Calculating a laser metric within a lithographic apparatus and method thereof
JP2017522582A (ja) * 2014-06-04 2017-08-10 サイマー リミテッド ライアビリティ カンパニー パルス光ビームのスペクトル特徴推定
WO2023135658A1 (ja) * 2022-01-11 2023-07-20 ギガフォトン株式会社 電子デバイスの製造方法、レーザ装置、及び波長シーケンス算出システム
JPWO2023135658A1 (enExample) * 2022-01-11 2023-07-20
JP7751664B2 (ja) 2022-01-11 2025-10-08 ギガフォトン株式会社 電子デバイスの製造方法、レーザ装置、及び波長シーケンス算出システム

Also Published As

Publication number Publication date
US7456934B2 (en) 2008-11-25
TW200827940A (en) 2008-07-01
US20080129974A1 (en) 2008-06-05
KR20080050305A (ko) 2008-06-05

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