JP2008124445A5 - - Google Patents
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- Publication number
- JP2008124445A5 JP2008124445A5 JP2007267546A JP2007267546A JP2008124445A5 JP 2008124445 A5 JP2008124445 A5 JP 2008124445A5 JP 2007267546 A JP2007267546 A JP 2007267546A JP 2007267546 A JP2007267546 A JP 2007267546A JP 2008124445 A5 JP2008124445 A5 JP 2008124445A5
- Authority
- JP
- Japan
- Prior art keywords
- photocatalytic
- layer
- conductive layer
- forming
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000001699 photocatalysis Effects 0.000 claims 16
- 238000013032 photocatalytic reaction Methods 0.000 claims 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 7
- 239000004065 semiconductor Substances 0.000 claims 7
- 238000000034 method Methods 0.000 claims 5
- 230000001678 irradiating effect Effects 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 239000011787 zinc oxide Substances 0.000 claims 4
- 239000007788 liquid Substances 0.000 claims 3
- 239000000463 material Substances 0.000 claims 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims 3
- 229910001887 tin oxide Inorganic materials 0.000 claims 3
- 238000007599 discharging Methods 0.000 claims 2
- 238000010304 firing Methods 0.000 claims 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 125000000217 alkyl group Chemical group 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 150000001282 organosilanes Chemical class 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007267546A JP5254589B2 (ja) | 2006-10-17 | 2007-10-15 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006282296 | 2006-10-17 | ||
| JP2006282296 | 2006-10-17 | ||
| JP2007267546A JP5254589B2 (ja) | 2006-10-17 | 2007-10-15 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008124445A JP2008124445A (ja) | 2008-05-29 |
| JP2008124445A5 true JP2008124445A5 (OSRAM) | 2010-11-18 |
| JP5254589B2 JP5254589B2 (ja) | 2013-08-07 |
Family
ID=39508821
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007267546A Expired - Fee Related JP5254589B2 (ja) | 2006-10-17 | 2007-10-15 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5254589B2 (OSRAM) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100984256B1 (ko) * | 2009-08-17 | 2010-09-30 | (주) 파루 | 자기 정렬 그라비어인쇄를 이용한 중첩정밀도 제어 방법 |
| KR101943293B1 (ko) | 2009-10-16 | 2019-01-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 표시 장치 및 전자 장치 |
| KR101894898B1 (ko) * | 2011-02-11 | 2018-09-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 발광 장치를 사용한 전자 기기 |
| CN103688601A (zh) | 2012-04-27 | 2014-03-26 | 松下电器产业株式会社 | 陶瓷基板复合体及陶瓷基板复合体的制造方法 |
| EP2867928B1 (en) * | 2012-06-29 | 2018-08-15 | Lumileds Holding B.V. | Ii-vi based light emitting semiconductor device |
| JP6184234B2 (ja) * | 2013-08-02 | 2017-08-23 | 富士フイルム株式会社 | 有機薄膜トランジスタ、有機半導体薄膜および有機半導体材料 |
| DE102014008963A1 (de) * | 2014-06-23 | 2016-01-07 | Merck Patent Gmbh | Additiv für LDS-Kunststoffe |
| CN114656804B (zh) * | 2022-03-03 | 2022-12-09 | 江苏圣天新材料有限公司 | 一种覆铜板用软性复合硅微粉的制备方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003298062A (ja) * | 2002-03-29 | 2003-10-17 | Sharp Corp | 薄膜トランジスタ及びその製造方法 |
| JP4324355B2 (ja) * | 2002-09-13 | 2009-09-02 | 大日本印刷株式会社 | パターン形成体の製造方法 |
| JP4498715B2 (ja) * | 2003-09-26 | 2010-07-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5116212B2 (ja) * | 2004-03-19 | 2013-01-09 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
| JP5110785B2 (ja) * | 2004-10-08 | 2012-12-26 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| JP4613044B2 (ja) * | 2004-10-26 | 2011-01-12 | 大日本印刷株式会社 | 有機エレクトロルミネッセント素子用基板 |
-
2007
- 2007-10-15 JP JP2007267546A patent/JP5254589B2/ja not_active Expired - Fee Related
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