JP2008124111A5 - - Google Patents

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Publication number
JP2008124111A5
JP2008124111A5 JP2006303676A JP2006303676A JP2008124111A5 JP 2008124111 A5 JP2008124111 A5 JP 2008124111A5 JP 2006303676 A JP2006303676 A JP 2006303676A JP 2006303676 A JP2006303676 A JP 2006303676A JP 2008124111 A5 JP2008124111 A5 JP 2008124111A5
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JP
Japan
Prior art keywords
film
gas supply
supply unit
ceiling wall
forming chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006303676A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008124111A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2006303676A priority Critical patent/JP2008124111A/ja
Priority claimed from JP2006303676A external-priority patent/JP2008124111A/ja
Priority to PCT/JP2007/070994 priority patent/WO2008056557A1/ja
Priority to CN2007800416922A priority patent/CN101558473B/zh
Priority to KR1020097009525A priority patent/KR20090066317A/ko
Priority to US12/513,362 priority patent/US20100210093A1/en
Priority to TW097103750A priority patent/TW200932942A/zh
Publication of JP2008124111A publication Critical patent/JP2008124111A/ja
Publication of JP2008124111A5 publication Critical patent/JP2008124111A5/ja
Pending legal-status Critical Current

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JP2006303676A 2006-11-09 2006-11-09 プラズマｃｖｄ法によるシリコン系薄膜の形成方法 Pending JP2008124111A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2006303676A JP2008124111A (ja) 2006-11-09 2006-11-09 プラズマｃｖｄ法によるシリコン系薄膜の形成方法
PCT/JP2007/070994 WO2008056557A1 (en) 2006-11-09 2007-10-29 Method for forming silicon based thin film by plasma cvd method
CN2007800416922A CN101558473B (zh) 2006-11-09 2007-10-29 利用等离子体cvd法的硅系薄膜的形成方法
KR1020097009525A KR20090066317A (ko) 2006-11-09 2007-10-29 플라즈마 ｃｖｄ법에 의한 실리콘계 박막의 형성방법
US12/513,362 US20100210093A1 (en) 2006-11-09 2007-10-29 Method for forming silicon-based thin film by plasma cvd method
TW097103750A TW200932942A (en) 2006-11-09 2008-01-31 Method for forming silicon thin film by plasma cvd method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006303676A JP2008124111A (ja) 2006-11-09 2006-11-09 プラズマｃｖｄ法によるシリコン系薄膜の形成方法

Publications (2)

Publication Number Publication Date
JP2008124111A JP2008124111A (ja) 2008-05-29
JP2008124111A5 true JP2008124111A5 (cg-RX-API-DMAC7.html) 2009-05-21

Family

ID=39364377

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006303676A Pending JP2008124111A (ja) 2006-11-09 2006-11-09 プラズマｃｖｄ法によるシリコン系薄膜の形成方法

Country Status (6)

Country Link
US (1) US20100210093A1 (cg-RX-API-DMAC7.html)
JP (1) JP2008124111A (cg-RX-API-DMAC7.html)
KR (1) KR20090066317A (cg-RX-API-DMAC7.html)
CN (1) CN101558473B (cg-RX-API-DMAC7.html)
TW (1) TW200932942A (cg-RX-API-DMAC7.html)
WO (1) WO2008056557A1 (cg-RX-API-DMAC7.html)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008177419A (ja) * 2007-01-19 2008-07-31 Nissin Electric Co Ltd シリコン薄膜形成方法
US9028924B2 (en) 2010-03-25 2015-05-12 Novellus Systems, Inc. In-situ deposition of film stacks
US8741394B2 (en) * 2010-03-25 2014-06-03 Novellus Systems, Inc. In-situ deposition of film stacks
US8709551B2 (en) * 2010-03-25 2014-04-29 Novellus Systems, Inc. Smooth silicon-containing films
US9165788B2 (en) 2012-04-06 2015-10-20 Novellus Systems, Inc. Post-deposition soft annealing
US9117668B2 (en) 2012-05-23 2015-08-25 Novellus Systems, Inc. PECVD deposition of smooth silicon films
US9388491B2 (en) 2012-07-23 2016-07-12 Novellus Systems, Inc. Method for deposition of conformal films with catalysis assisted low temperature CVD
US8895415B1 (en) 2013-05-31 2014-11-25 Novellus Systems, Inc. Tensile stressed doped amorphous silicon
JP2017092142A (ja) * 2015-11-05 2017-05-25 東京エレクトロン株式会社 被処理体を処理する方法
US20170294289A1 (en) * 2016-04-11 2017-10-12 Aaron Reinicker Boron compositions suitable for ion implantation to produce a boron-containing ion beam current
CN110235248B (zh) * 2017-04-27 2024-03-26 应用材料公司 用于3d nand应用的低介电常数氧化物和低电阻op堆叠
JP7028001B2 (ja) * 2018-03-20 2022-03-02 日新電機株式会社 成膜方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993002468A1 (fr) * 1991-07-16 1993-02-04 Seiko Epson Corporation Appareil de deposition en phase vapeur par procede chimique, procede de formation de films semi-conducteurs et procede de production de dispositifs semi-conducteurs a mince film
DE19711268B4 (de) * 1996-03-18 2004-09-16 Boe-Hydis Technology Co., Ltd. Chemisches Dampfabscheidungsverfahren mit induktiv gekoppeltem Plasma, Verwendung des Verfahrens zum Herstellen von Dünnschichttransistoren und durch das Verfahren hergestellte Dünnschichten aus amorphen Silizium
JP3680677B2 (ja) * 2000-02-08 2005-08-10 セイコーエプソン株式会社 半導体素子製造装置および半導体素子の製造方法
JP2001316818A (ja) * 2000-02-29 2001-11-16 Canon Inc 膜形成方法及び形成装置、並びにシリコン系膜、起電力素子及びそれを用いた太陽電池、センサー及び撮像素子
JP2003068643A (ja) * 2001-08-23 2003-03-07 Japan Advanced Inst Of Science & Technology Hokuriku 結晶性シリコン膜の作製方法及び太陽電池
JP3894862B2 (ja) * 2002-05-29 2007-03-22 京セラ株式会社 Ｃａｔ−ＰＥＣＶＤ法
US7186663B2 (en) * 2004-03-15 2007-03-06 Sharp Laboratories Of America, Inc. High density plasma process for silicon thin films
JP4474596B2 (ja) * 2003-08-29 2010-06-09 キヤノンアネルバ株式会社 シリコンナノ結晶構造体の形成方法及び形成装置
JP4434115B2 (ja) * 2005-09-26 2010-03-17 日新電機株式会社 結晶性シリコン薄膜の形成方法及び装置
JP2007123008A (ja) * 2005-10-27 2007-05-17 Nissin Electric Co Ltd プラズマ生成方法及び装置並びにプラズマ処理装置
JP5162108B2 (ja) * 2005-10-28 2013-03-13 日新電機株式会社 プラズマ生成方法及び装置並びにプラズマ処理装置
JP2008177419A (ja) * 2007-01-19 2008-07-31 Nissin Electric Co Ltd シリコン薄膜形成方法

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