JP2008121062A5 - - Google Patents

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JP2008121062A5
JP2008121062A5 JP2006305598A JP2006305598A JP2008121062A5 JP 2008121062 A5 JP2008121062 A5 JP 2008121062A5 JP 2006305598 A JP2006305598 A JP 2006305598A JP 2006305598 A JP2006305598 A JP 2006305598A JP 2008121062 A5 JP2008121062 A5 JP 2008121062A5
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plating solution
plating
substrate
solution injection
injection port
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Description

本願請求項1に記載の発明は、基板と、前記基板の被めっき面に対向して配置されるアノードと、前記基板と前記アノードの間を遮断するように設置される抵抗体と、前記基板と前記抵抗体との間の隙間にめっき液を噴射してこの隙間にめっき液を流通させる複数のめっき液噴射口を有するめっき液流通機構とを具備し、前記めっき液流通機構は、前記めっき液噴射口による前記基板と前記抵抗体の間の隙間へのめっき液の噴射と、前記隙間に満たされためっき液の排出により、この隙間にめっき液を流通させる構成であることを特徴とするめっき装置にある。 The invention according to claim 1 of the present application includes a substrate, an anode disposed to face a surface to be plated of the substrate, a resistor disposed so as to block between the substrate and the anode, and the substrate And a plating solution distribution mechanism having a plurality of plating solution injection ports for injecting the plating solution into a gap between the resistor and the plating solution, and the plating solution distribution mechanism includes the plating solution distribution mechanism. The plating solution is circulated through the gap by spraying the plating solution into the gap between the substrate and the resistor through the liquid jetting port and discharging the plating solution filled in the gap. It is in the plating equipment.

本願請求項2に記載の発明は、前記複数のめっき液噴射口は、前記抵抗体の周囲または前記基板の外周部に沿って配置されていることを特徴とする請求項1に記載のめっき装置にある。 The invention described in the claims 2, wherein the plurality of plating solution injection port, the plating apparatus according to claim 1, characterized in that disposed along the outer periphery of or around the substrate of the resistor It is in.

本願請求項3に記載の発明は、前記めっき液噴射口は、このめっき液噴射口から噴射されるめっき液が、基板の被めっき面の中央に向かって直線状又は扇状に広がって流れるように構成されていることを特徴とする請求項1又は2に記載のめっき装置にある。 The invention described in the claims 3, wherein the plating solution injection port, the plating solution injected from the plating solution injection port, flow spreads in a straight line or fan towards the center of the plated surface of the base plate in the plating apparatus according to claim 1 or 2, characterized in that it is configured to.

本願請求項4に記載の発明は、前記めっき液流通機構は、前記複数のめっき液噴射口を切り替えてこれら複数のめっき液噴射口の全部又は一部からめっき液を噴射させる切替機構を有することを特徴とする請求項1乃至の内の何れかに記載のめっき装置にある。 In the invention according to claim 4 of the present application, the plating solution circulation mechanism has a switching mechanism that switches the plurality of plating solution injection ports and injects the plating solution from all or a part of the plurality of plating solution injection ports. The plating apparatus according to any one of claims 1 to 3 , wherein:

本願請求項5に記載の発明は、前記切替機構は、めっき液を噴射させるめっき液噴射口を複数組に分け、これら各組のめっき液噴射口を順番に切り替えてめっき液を順番に噴射させる構成であることを特徴とする請求項4に記載のめっき装置にある。In the invention according to claim 5 of the present application, the switching mechanism divides the plating solution injection holes for injecting the plating solution into a plurality of sets, and sequentially switches the plating solution injection ports of these sets to inject the plating solution in order. It is a structure, It exists in the plating apparatus of Claim 4.
本願請求項6に記載の発明は、前記切替機構は、めっき液を噴射していないめっき液噴射口からめっき液を排出させる機構であることを特徴とする請求項5に記載のめっき装置にある。The invention according to claim 6 of the present application is the plating apparatus according to claim 5, wherein the switching mechanism is a mechanism for discharging the plating solution from a plating solution injection port not spraying the plating solution. .

本願請求項7に記載の発明は、基板の被めっき面をめっき液に接触させて配置すると共に、前記基板の被めっき面に対向させてアノードを配置し、前記基板と前記アノードとの間に抵抗体を配置し、さらに前記基板と前記抵抗体との間の隙間にめっき液を噴射して流通させる複数のめっき液噴射口を配置し、前記めっき液噴射口から基板の被めっき面の中央へ向けてめっき液を噴射すると同時に前記隙間に満たされためっき液を隙間の外部に排出しながら、前記アノードと前記基板との間にめっき電流を通電して基板の被めっき面にめっきを行うことを特徴とするめっき方法にある。 The invention described in the claims 7, as well as placed in contact with the plated surface of the base plate to the liquid Ki Tsu order, the anode was placed to face the surface to be plated of the substrate, before Symbol substrate and the place the resistor between the anode and further disposing a plurality of plating liquid jets injected by circulating the plating liquid in the gap between the substrate and the resistor substrate from the plating solution injection port While spraying the plating solution toward the center of the surface to be plated, and simultaneously discharging the plating solution filled in the gap to the outside of the gap, a plating current is passed between the anode and the substrate to cover the substrate. A plating method is characterized in that the plating surface is plated.

本願請求項8に記載の発明は、前記複数のめっき液噴射口を、前記抵抗体の周囲または前記基板の外周部に沿って配置することを特徴とする請求項7に記載のめっき方法にある。 The invention according to claim 8 of the present application is the plating method according to claim 7, wherein the plurality of plating solution injection holes are arranged around the resistor or along the outer periphery of the substrate. .

本願請求項9に記載の発明は、前記めっき液噴射口から噴射されるめっき液を、基板の被めっき面の中央に向かって直線状又は扇状に流すことを特徴とする請求項7又は8に記載のめっき方法にある。 The invention described in the claims 9, the plating solution ejected from the plating solution injection port, claim 7, wherein the flow linearly or fan towards the center of the plated surface of the base plate or 8 It is in the plating method of description.

本願請求項11に記載の発明は、めっき液を噴射させるめっき液噴射口を複数組に分け、これら各組のめっき液噴射口を順番に切り替えてめっき液を順番に噴射させることを特徴とする請求項10に記載のめっき装置にある。The invention according to claim 11 of the present application is characterized in that the plating solution injection ports for injecting the plating solution are divided into a plurality of sets, and the plating solution injection ports of these sets are switched in order to inject the plating solution in order. It exists in the plating apparatus of Claim 10.
本願請求項12に記載の発明は、めっき液を噴射していないめっき液噴射口からめっき液を排出させることを特徴とする請求項11に記載のめっき装置にある。The invention according to claim 12 of the present application is the plating apparatus according to claim 11, wherein the plating solution is discharged from a plating solution injection port that is not spraying the plating solution.

本願請求項1に記載の発明によれば、電流の整流作用の高い抵抗体を用いたので、基板の被めっき面上の電流密度の均一化が図れ、めっき膜厚の均一化が図れる。
まためっき液噴射口から基板と抵抗体の間の隙間にめっき液を噴射してこの隙間のめっき液を攪拌・流通するので、例え基板と抵抗体間の隙間が狭くても、容易にめっき液を攪拌・流通させることができ、めっき表面の均一性が図れる。特に基板と抵抗体との間隔が6mm未満の場合、有効である
According to the first aspect of the present invention, since the resistor having a high current rectifying function is used, the current density on the surface to be plated of the substrate can be made uniform, and the plating film thickness can be made uniform.
In addition, since the plating solution is sprayed from the plating solution injection port into the gap between the substrate and the resistor, and the plating solution in this gap is stirred and distributed, the plating solution can be easily used even if the gap between the substrate and the resistor is narrow. Can be stirred and distributed, and the uniformity of the plating surface can be achieved. This is particularly effective when the distance between the substrate and the resistor is less than 6 mm .

本願請求項1に記載の発明によれば、めっき液噴射口から基板と抵抗体の間の隙間へ噴射されためっき液をスムーズにその外部ヘ排出することができ、この隙間へのめっき液の流通が良好になる。 According to the first aspect of the present invention, the plating solution sprayed from the plating solution injection port into the gap between the substrate and the resistor can be smoothly discharged to the outside. Distribution is good.

本願請求項2,請求項3に記載の発明によれば、めっき液噴射口から噴射されためっき液が基板の被めっき面の周囲から中央に向かうので、抵抗体の周囲を回り込むことなく、基板と抵抗体間の隙間に確実にめっき液を流し込むことができ、基板の被めっき面全面にわたってよどむことなくめっき液を流通させることができる。 According to the invention described in claims 2 and 3 of the present application, since the plating solution sprayed from the plating solution spray port is directed from the periphery of the surface to be plated of the substrate toward the center, the substrate does not wrap around the resistor. The plating solution can be surely poured into the gap between the resistor and the resistor, and the plating solution can be distributed without stagnation over the entire surface to be plated of the substrate.

本願請求項4に記載の発明によれば、めっき液にランダムな流れを与えることができ、めっき表面の均一性をさらに高めることができる。 According to the fourth aspect of the present invention, a random flow can be given to the plating solution, and the uniformity of the plating surface can be further enhanced.

Claims (12)

基板と、
前記基板の被めっき面に対向して配置されるアノードと、
前記基板と前記アノードの間を遮断するように設置される抵抗体と、
前記基板と前記抵抗体との間の隙間にめっき液を噴射してこの隙間にめっき液を流通させる複数のめっき液噴射口を有するめっき液流通機構とを具備し、
前記めっき液流通機構は、前記めっき液噴射口による前記基板と前記抵抗体の間の隙間へのめっき液の噴射と、前記隙間に満たされためっき液の排出により、この隙間にめっき液を流通させる構成であることを特徴とするめっき装置。
A substrate,
An anode disposed opposite the surface to be plated of the substrate;
A resistor installed to block between the substrate and the anode;
; And a plating solution circulating mechanism having a plurality of plating solution injection port by injecting the plating solution into the gap circulating a plating solution into the gap between the resistor and the substrate,
The plating solution distribution mechanism distributes the plating solution into the gap by spraying the plating solution into the gap between the substrate and the resistor through the plating solution injection port and discharging the plating solution filled in the gap. A plating apparatus characterized by having a structure to be made .
前記複数のめっき液噴射口は、前記抵抗体の周囲または前記基板の外周部に沿って配置されていることを特徴とする請求項1に記載のめっき装置。 The plating apparatus according to claim 1, wherein the plurality of plating solution injection ports are arranged around the resistor or along an outer peripheral portion of the substrate. 前記めっき液噴射口は、このめっき液噴射口から噴射されるめっき液が、基板の被めっき面の中央に向かって直線状又は扇状に広がって流れるように構成されていることを特徴とする請求項1又は2に記載のめっき装置。 The plating solution injection port, the plating solution injected from the plating solution injection port, characterized in that it is configured to flow spreads in a straight line or fan towards the center of the plated surface of the base plate The plating apparatus according to claim 1 or 2 . 前記めっき液流通機構は、前記複数のめっき液噴射口を切り替えてこれら複数のめっき液噴射口の全部又は一部からめっき液を噴射させる切替機構を有することを特徴とする請求項1乃至の内の何れかに記載のめっき装置。 The plating solution circulation mechanism, according to claim 1 to 3, characterized in that a switching mechanism for ejecting the plating solution from all or some of the plurality of plating solution injection port by switching the plurality of plating solution injection port The plating apparatus in any one of. 前記切替機構は、めっき液を噴射させるめっき液噴射口を複数組に分け、これら各組のめっき液噴射口を順番に切り替えてめっき液を順番に噴射させる構成であることを特徴とする請求項4に記載のめっき装置。The switching mechanism is configured to divide the plating solution injection holes for injecting the plating solution into a plurality of sets, and to sequentially switch the plating solution injection ports of these sets to inject the plating solution in order. 4. The plating apparatus according to 4. 前記切替機構は、めっき液を噴射していないめっき液噴射口からめっき液を排出させる機構であることを特徴とする請求項5に記載のめっき装置。The plating apparatus according to claim 5, wherein the switching mechanism is a mechanism that discharges the plating solution from a plating solution injection port that is not spraying the plating solution. 板の被めっき面をめっき液に接触させて配置すると共に、
前記基板の被めっき面に対向させてアノードを配置し、
記基板と前記アノードとの間に抵抗体を配置し、
さらに前記基板と前記抵抗体との間の隙間にめっき液を噴射して流通させる複数のめっき液噴射口を配置し、
前記めっき液噴射口から基板の被めっき面の中央へ向けてめっき液を噴射すると同時に前記隙間に満たされためっき液を隙間の外部に排出しながら、前記アノードと前記基板との間にめっき電流を通電して基板の被めっき面にめっきを行うことを特徴とするめっき方法。
Together placed in contact with the plated surface of the base plate to the liquid Ki Tsu fit,
The anode was placed to face the surface to be plated of the substrate,
Place the resistor between the front Stories substrate and the anode,
Further, a plurality of plating solution injection ports for injecting and distributing the plating solution into the gap between the substrate and the resistor are arranged,
A plating current is injected between the anode and the substrate while discharging the plating solution filled in the gap from the plating solution injection port toward the center of the surface to be plated of the substrate. The plating method is characterized in that the surface to be plated is plated by energizing the substrate.
前記複数のめっき液噴射口を、前記抵抗体の周囲または前記基板の外周部に沿って配置することを特徴とする請求項7に記載のめっき方法。 The plating method according to claim 7, wherein the plurality of plating solution injection ports are arranged around the resistor or along an outer peripheral portion of the substrate. 前記めっき液噴射口から噴射されるめっき液を、基板の被めっき面の中央に向かって直線状又は扇状に流すことを特徴とする請求項7又は8に記載のめっき方法。 The plating method according to claim 7 or 8, characterized in that flow the plating solution ejected from the plating solution injection port, a linear or fan towards the center of the plated surface of the base plate. めっき液を噴射する前記複数のめっき液噴射口を切り替えることによって、これら複数のめっき液噴射口の全部又は一部からめっき液を噴射させることを特徴とする請求項7乃至9の内の何れかに記載のめっき方法。   The plating solution is sprayed from all or a part of the plurality of plating solution injection ports by switching the plurality of plating solution injection ports for injecting the plating solution. The plating method described in 1. めっき液を噴射させるめっき液噴射口を複数組に分け、これら各組のめっき液噴射口を順番に切り替えてめっき液を順番に噴射させることを特徴とする請求項10に記載のめっき装置。11. The plating apparatus according to claim 10, wherein the plating solution injection ports for injecting the plating solution are divided into a plurality of groups, and the plating solution injection ports are sequentially switched to spray the plating solution in order. めっき液を噴射していないめっき液噴射口からめっき液を排出させることを特徴とする請求項11に記載のめっき装置。The plating apparatus according to claim 11, wherein the plating solution is discharged from a plating solution injection port that is not spraying the plating solution.
JP2006305598A 2006-11-10 2006-11-10 Plating device and plating method Pending JP2008121062A (en)

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JP2009263758A (en) * 2008-04-30 2009-11-12 Ebara Corp Electroplating device and electroplating method
JP5840894B2 (en) * 2011-08-19 2016-01-06 株式会社荏原製作所 Substrate processing apparatus and substrate processing method
JP6092653B2 (en) * 2012-02-27 2017-03-08 株式会社荏原製作所 Substrate cleaning apparatus and cleaning method
CN103938257A (en) * 2014-05-08 2014-07-23 中国科学院宁波材料技术与工程研究所 Multipurpose electrochemical cell device as well as electroplating and analysis method
KR102518086B1 (en) * 2021-06-04 2023-04-06 가부시키가이샤 에바라 세이사꾸쇼 plating device

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JP3830272B2 (en) * 1998-03-05 2006-10-04 株式会社荏原製作所 Substrate plating equipment
JP2000087299A (en) * 1998-09-08 2000-03-28 Ebara Corp Substrate plating apparatus
JP2005264339A (en) * 2000-04-20 2005-09-29 Toshiba Corp Electrolytic treatment method and apparatus therefor
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