JP2008098564A - Manufacturing method of electronic device, and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an efficient manufacturing method of an electronic device with high reliability, and to provide a semiconductor device excellent in mounting capability. <P>SOLUTION: The method of manufacturing an electronic device comprises: a process for preparing a semiconductor device 1 having a semiconductor chip 10 wherein an electrode 14 is formed, two or more first portions 21 formed in the surface 15 of the semiconductor chip 10, a resin projection 20 which is arranged between the first portions 21 and includes second portions 22 whose height is lower than that of the first portion 21, and wiring 40 which has an electric connection area 42 arranged on the first portion 21; a process for preparing a wiring substrate 50 having a base substrate 52 and a wiring pattern 54; and a process for mounting the semiconductor device 1 in the wiring substrate 50 and for carrying out electric connection by bringing the electric connection area and the wiring pattern in to contact. In the process for mounting the semiconductor device in the wiring substrate, the second portion 22 is brought into contact with the wiring substrate 50, after bringing the electric connection area and the wiring pattern into contact. <P>COPYRIGHT: (C)2008,JPO&amp;INPIT

Description

  The present invention relates to an electronic device manufacturing method and a semiconductor device.

  In order to reduce the size of the electronic device, the outer shape of the semiconductor device is preferably small. However, as the roles of semiconductor devices have diversified, the integration of integrated circuits formed on semiconductor chips has progressed, and accordingly, the number of pins of semiconductor chips has increased. That is, at present, development of a semiconductor device capable of simultaneously satisfying the demands of miniaturization of a semiconductor device, high integration of an integrated circuit, and an increase in electrodes is in progress.

As a semiconductor device that can meet this demand, a semiconductor device of a type in which wiring is formed on a semiconductor chip has attracted attention. In this type of semiconductor device, the outer shape of the semiconductor device can be made substantially the same as the outer shape of the semiconductor chip, so that the semiconductor device can be downsized.
JP-A-2-272737

  If the semiconductor device is downsized, it becomes difficult to mount it on a wiring board or the like. However, in order to ensure the reliability of the electronic device, it is important to maintain the reliability of the semiconductor device even after mounting.

  An object of the present invention is to provide a method for efficiently manufacturing a highly reliable electronic device and a semiconductor device capable of efficiently manufacturing a highly reliable electronic device.

(1) An electronic device manufacturing method according to the present invention includes:
A semiconductor chip on which an electrode is formed; a plurality of first portions arranged along a virtual straight line formed on a surface of the semiconductor chip on which the electrode is formed; and two adjacent first first parts The electrode having a resin protrusion including a second portion disposed between the portions and having a second height lower than that of the first portion; and an electrical connection portion disposed on the first portion; A step of preparing a semiconductor device having electrically connected wiring;
Preparing a wiring board having a base board and a wiring pattern formed on the base board;
Mounting the semiconductor device on the wiring board and bringing the electrical connection portion and the wiring pattern into contact with each other to electrically connect;
Including
In the step of mounting the semiconductor device on the wiring board,
After the electrical connection portion and the wiring pattern are brought into contact with each other, the second portion is brought into contact with the wiring board.

  According to the present invention, the second portion of the resin protrusion is brought into contact with the wiring board in the step of mounting the semiconductor device on the wiring board. When the second portion of the resin protrusion comes into contact with the wiring board, the semiconductor device (semiconductor chip) and the wiring board are unlikely to approach each other even if the semiconductor device and the wiring board are pressed further. That is, the distance between the semiconductor device (semiconductor chip) and the wiring board can be regulated by the second portion.

  Therefore, according to the present invention, it is possible to easily regulate the distance between the semiconductor device (semiconductor chip) and the wiring board, and to manufacture a highly reliable electronic device. A method can be provided.

(2) In this electronic device manufacturing method,
In the resin protrusion of the semiconductor device, the height H of the first portion and the width W of the bottom surface of the first portion in the direction perpendicular to the imaginary straight line satisfy the relationship of H <W / 2. The shape to satisfy | fill may be sufficient.

  According to this, since the contact area between the electrical connection portion and the wiring pattern can be increased without greatly deforming the resin protrusion (first portion), a highly reliable electronic device can be manufactured. .

(3) In this electronic device manufacturing method,
H ≦ 20 μm and
W ≦ 50 μm may be satisfied.

(4) In this electronic device manufacturing method,
H ≧ 5 μm and
W ≧ 15 μm may be satisfied.

(5) In this electronic device manufacturing method,
The resin protrusion of the semiconductor device may have a shape in which a height H of the first portion and a height h of the second portion satisfy a relationship of Hh ≦ 5 μm.

(6) In this electronic device manufacturing method,
The upper surface of the first portion may be a convex curved surface.

  Note that the upper surface of the first portion may be a part of an arc. Alternatively, the upper surface of the first part may be a part of an elliptical arc.

(7) In this electronic device manufacturing method,
In the resin protrusion of the semiconductor device, the bottom surface of the second part may be narrower than the bottom surface of the first part.

(8) In this electronic device manufacturing method,
The semiconductor device further includes a resin portion formed on the surface and having a height lower than that of the first portion,
In the step of mounting the semiconductor device on the wiring board,
You may make the said resin part contact the said wiring board.

  According to this, the distance between the semiconductor device (semiconductor chip) and the wiring board can be regulated by the resin portion. Therefore, it becomes possible to manufacture an electronic device with higher reliability.

(9) In this electronic device manufacturing method,
The resin portion may be the same height as the second portion.

(10) A semiconductor device according to the present invention includes:
A semiconductor chip on which electrodes are formed;
A plurality of first portions arranged along an imaginary straight line formed on a surface of the semiconductor chip on which the electrodes are formed, and the two first portions arranged adjacent to each other; A resin protrusion including a second portion having a height lower than that of the first portion;
A wiring electrically connected to the electrode having an electrical connection disposed on the first portion;
Have
The height H of the first portion and the width W of the bottom surface of the first portion in the direction perpendicular to the virtual line satisfy the relationship of H <W / 2.

  According to the present invention, it is possible to provide a semiconductor device capable of increasing the contact area between the electrical connection portion and the wiring pattern without greatly deforming the resin protrusion (first portion).

(11) In this semiconductor device,
H ≦ 20 μm and
W ≦ 50 μm may be satisfied.

(12) In this semiconductor device,
H ≧ 5 μm and
W ≧ 15 μm may be satisfied.

(13) In this semiconductor device,
The height H of the first portion and the height h of the second portion may satisfy a relationship of Hh ≦ 5 μm.

(14) In this semiconductor device,
The upper surface of the first portion may be a convex curved surface.

(15) In this semiconductor device,
The width of the bottom surface of the second portion may be narrower than the width of the bottom surface of the first portion.

(16) In this semiconductor device,
You may further have the resin part formed on the said surface and whose height is lower than the said 1st part.

(17) In this semiconductor device,
The resin portion may be the same height as the second portion.

  Embodiments to which the present invention is applied will be described below with reference to the drawings. However, the present invention is not limited to the following embodiments. Moreover, this invention shall include what combined the following content freely.

  FIG. 1A to FIG. 10 are diagrams for explaining a method of manufacturing an electronic device according to an embodiment to which the present invention is applied.

(1) About Semiconductor Device 1 The method of manufacturing an electronic device according to the present embodiment includes preparing the semiconductor device 1. Hereinafter, the configuration of the semiconductor device 1 will be described with reference to FIGS. Here, FIG. 1A is a top view of the semiconductor device 1, FIG. 1B is a perspective view of the semiconductor device 1, and FIG. 1C is the IC-IC line of FIG. FIG. 1D is a partially enlarged view of a cross section taken along the line ID-ID in FIG. FIG. 2 is an enlarged perspective view showing the first portion 21 of the resin protrusion 20 and the wiring 40.

  The semiconductor device 1 includes a semiconductor chip 10. The semiconductor chip 10 may be a silicon chip, for example. An integrated circuit 12 may be formed on the semiconductor chip 10 (see FIG. 1C). The configuration of the integrated circuit 12 is not particularly limited. For example, the integrated circuit 12 may include an active element such as a transistor and a passive element such as a resistor, a coil, and a capacitor.

  An electrode 14 is formed on the semiconductor chip 10. The electrode 14 may be electrically connected to the inside of the semiconductor chip 10. The electrode 14 may be electrically connected to the integrated circuit 12. Alternatively, a conductor (conductive pad) that is not electrically connected to the integrated circuit 12 may be referred to as the electrode 14. The electrode 14 may be a part of the internal wiring of the semiconductor chip 10. At this time, the electrode 14 may be a portion of the internal wiring of the semiconductor chip 10 that is used for electrical connection with the outside. The electrode 14 may be formed of a metal such as aluminum or copper. Further, a cap layer such as TiN or Ni may be provided on the surface of the electrode 14. Note that the surface of the semiconductor chip 10 on which the electrodes 14 are formed may be rectangular (rectangular or square).

As shown in FIGS. 1C and 1D, the semiconductor chip 10 may have a passivation film 16. The passivation film 16 is formed so as to expose the electrode 14. An opening that exposes the electrode 14 may be formed in the passivation film 16. The passivation film 16 may be formed so as to partially cover the electrode 14. The passivation film 16 may be formed so as to cover the periphery of the electrode 14 as shown in FIG. The passivation film may be, for example, an inorganic insulating film such as SiO ₂ or SiN. Alternatively, the passivation film 16 may be an organic insulating film such as a polyimide resin.

  The semiconductor device according to the present embodiment includes a resin protrusion 20 as shown in FIGS. 1 (A) to 1 (D). The resin protrusion 20 is formed on the surface 15 on which the electrode 14 of the semiconductor chip 10 is formed. The resin protrusion 20 may be formed on the passivation film 16 as shown in FIGS. 1 (C) and 1 (D).

  As shown in FIG. 1A, the resin protrusion 20 may have a shape extending along a virtual straight line 100. At this time, the straight line 100 may be a straight line parallel to any side of the surface 15 of the semiconductor chip 10. For example, the straight line 100 may be a straight line parallel to the long side 17 of the surface 15. The resin protrusion 20 may be disposed in the peripheral region of the long side 17 on the surface 15. However, the virtual straight line may be a straight line parallel to the short side of the surface 15.

  The resin protrusion 20 includes a plurality of first portions 21 arranged along the straight line 100, and a second portion 22 disposed between two adjacent first portions 21 (FIG. 1B). ) And FIG. 1 (D)). The first portion 21 is a portion overlapping with a wiring 40 described later, and the second portion 22 is a portion exposed from the wiring 40.

  In the present embodiment, the resin protrusion 20 has a height H of the first portion 21 higher than a height h of the second portion 22 as shown in FIG. In addition, the height said here may be the width | variety of the thickness direction (direction orthogonal to the surface 15) of the semiconductor chip 10 of the resin protrusion 20. FIG. The height of the first portion 21 may be the distance from the surface 15 (passivation film 16) to the apex of the first portion 21. Further, the height of the second portion 22 may be a distance from the surface 15 (passivation film 16) to the apex of the second portion 22. The height H of the first portion 21 and the height h of the second portion 22 may satisfy the relationship of Hh ≦ 5 μm.

  The first portion 21 may have a shape in which the height H and the width W of the bottom surface satisfy the relationship of H <W / 2 (see FIG. 2). Here, the width of the bottom surface is a length in a direction perpendicular to the straight line 100 on the bottom surface. Alternatively, the width of the bottom surface may be the length of the bottom surface in the direction in which a wiring 40 described later extends. In the present embodiment, the shape of the first portion 21 may be H ≦ 20 μm and W ≦ 50 μm. The shape of the first portion 21 may also be H ≧ 5 μm and W ≧ 15 μm. Further, the upper surface of the first portion 21 may have a convex curved surface. The upper surface of the first portion 21 may be a part of an arc. Alternatively, the upper surface of the first portion 21 may be a part of an elliptical arc.

  In the present embodiment, the width w of the bottom surface of the second portion 22 may be narrower than the width W of the bottom surface of the first portion 21 as shown in FIG. At this time, the cross-sectional shape obtained by cutting the second portion 22 along a plane orthogonal to the straight line 100 may be similar to the cross-sectional shape obtained by cutting the first portion 21 along a plane orthogonal to the straight line 100. However, the width of the bottom surface of the second portion 22 may be the same as the width of the bottom surface of the first portion 21 (not shown).

  In addition, the material of the resin protrusion 20 is not particularly limited, and any known material may be applied. For example, the resin protrusion 20 is made of polyimide resin, silicone-modified polyimide resin, epoxy resin, silicone-modified epoxy resin, acrylic resin, phenol resin, silicone resin, modified polyimide resin, benzocyclobutene (BCB), polybenzoxazole (PBO). Polybenzoxazole) or other resin.

  The semiconductor device according to the present embodiment may include a resin portion 30 as shown in FIGS. 1 (A) to 1 (C). The resin part 30 is formed on the surface 15 of the semiconductor chip 10. The resin portion 30 may be formed on the passivation film 16 as shown in FIG. The height of the resin portion 30 may be lower than the height of the first portion 21. The resin portion 30 may be the same height as the second portion 22. The cross-sectional shape obtained by cutting the resin portion 30 along a plane orthogonal to the straight line 100 may be the same as the cross-sectional shape obtained by cutting the second portion 22 along a plane orthogonal to the straight line 100. However, the semiconductor device may be configured without the resin portion 30 (not shown).

  The material of the resin portion 30 is not particularly limited, but may be formed of the same material as the resin protrusion 20.

  The semiconductor device according to the present embodiment includes a wiring 40 as shown in FIGS. The wiring 40 is electrically connected to the electrode 14. The wiring 40 may be formed so as to extend from the electrode 14 to the passivation film 16 beyond the resin protrusion 20. That is, the wiring 40 may be formed on both sides of the resin protrusion 20 so as to be in contact with the passivation film 16 (surface 15). A portion of the resin protrusion 20 that overlaps the wiring 40 is the first portion 21.

  The wiring 40 includes an electrical connection portion 42. Here, the electrical connection portion 42 is a region disposed on the resin protrusion 20 (first portion 21) in the wiring 40. The electrical connection portion 42 is a portion of the wiring 40 that is used for electrical connection with a conductive portion (such as a wiring pattern on a wiring board) of another electronic component. In the present embodiment, a region of the wiring 40 that is disposed at a position higher than the second portion 22 (a region protruding from the second portion 22) may be referred to as the electrical connection portion 42. .

  The material applicable to the wiring 40 is not particularly limited. The wiring 40 may be made of, for example, Au, TiW, Cu, Ni, Pd, Al, Cr, Ti, W, NiV, lead-free solder, or the like. Further, the structure of the wiring 40 is not particularly limited. For example, the wiring 40 may be formed of a plurality of layers. At this time, the wiring 40 may include a first layer formed of titanium tungsten and a second layer formed of gold (not shown). Alternatively, the wiring 40 may be formed of a single layer.

  The semiconductor device 1 may have the above configuration.

  Although the method for manufacturing the semiconductor device 1 is not particularly limited, an example of a method for manufacturing the semiconductor device 1 will be described below.

  First, the semiconductor substrate 11 shown in FIGS. 3A and 3B is prepared. Here, FIG. 3A is a schematic view of the semiconductor substrate 11, and FIG. 3B is a partially enlarged view of a cross-sectional view of the semiconductor substrate 11.

  As shown in FIG. 3A, the semiconductor substrate 11 has a wafer shape. The wafer-like semiconductor substrate 11 has a region 200 to be a plurality of semiconductor chips (semiconductor chips 10). However, a semiconductor chip (see FIG. 1A) may be prepared as a semiconductor substrate and the following steps may be performed.

  An electrode 14 is formed on the semiconductor substrate 11 as shown in FIG. The semiconductor substrate 11 may have a passivation film 16 that exposes the electrode 14.

  Next, a resin material 25 is provided on the semiconductor substrate 11 (see FIG. 4A), the resin material 25 is patterned (see FIG. 4B), and this is cured (for example, thermosetting) to form the first and Second resin members 27 and 29 are formed (see FIG. 4C). In addition, the 1st and 2nd resin members 27 and 29 are members used as the resin protrusion 20 and the resin part 30 by the etching process mentioned later. The bottom surface and height of the first and second resin members 27 and 29 can be controlled by adjusting the height and width of the resin material 25, the curing conditions, and the like.

  Next, the wiring 40 is formed. FIG. 5A to FIG. 5C are diagrams for explaining a process of forming the wiring 40.

  First, as shown in FIG. 5A, a metal layer 45 is formed. The metal layer 45 may be formed so as to cover the electrode 14, the passivation film 16, the first resin member 27, and the second resin member 29. The metal layer 45 can be formed by sputtering, for example. The metal layer 45 may be a single metal layer or a plurality of metal layers.

  Then, as shown in FIG. 5B, a mask 47 is formed on the metal layer 45. The mask 47 may be patterned so as to cover only the region of the metal layer 45 that becomes the wiring 40.

  Then, as illustrated in FIG. 5C, the wiring 40 can be formed by removing the exposed region from the mask 47 in the metal layer 45.

  However, the method of forming the wiring 40 is not limited to this, and any known method may be applied. The wiring 40 may be formed by applying, for example, an inkjet method or a plating method.

  Next, the exposed portion from the wiring 40 in the first resin member 27 is etched, the height of the exposed portion from the wiring 40 is lowered, and the first and second portions 21 and 22 having different heights are formed. The resin protrusion 20 is formed (see FIGS. 1A to 1D). In this step, the exposed portion of the first resin member 27 from the wiring 40 may be etched to reduce the width of the exposed portion (see FIG. 1B). Note that the width and height of the second portion 22 can be controlled by adjusting the etching solution, the etching time, or the plasma etching conditions and the plasma etching time.

  Further, the second resin member 29 is etched to reduce the height of the second resin member 29 to form the resin portion 30 (see FIGS. 1A to 1C). Thereby, the resin part 30 whose height is lower than that of the first portion 21 can be formed. Note that the step of etching the second resin member 29 may be performed simultaneously with the step of etching the first resin member 27. By simultaneously etching the first resin member 27 and the second resin member 29, the exposed portion (second portion 22) from the wiring 40 in the first resin member 27 and the resin portion 30 are the same. It can be formed in a shape (same height).

  Then, the semiconductor device 1 shown in FIGS. 1A to 1D can be manufactured through a process of cutting the semiconductor substrate 11 and dividing it into individual pieces, an inspection process, and the like.

(2) Wiring Board 50 The electronic device manufacturing method according to the present embodiment includes a step of preparing the wiring board 50. Hereinafter, the configuration of the wiring board 50 will be described.

  The wiring substrate 50 includes a base substrate 52 and a wiring pattern 54. The base substrate 52 (wiring substrate 50) may be a part of an electro-optical panel (liquid crystal panel, electroluminescence panel, etc.). At this time, the base substrate 52 may be, for example, a ceramic substrate or a glass substrate. The material of the wiring pattern 54 is not particularly limited. For example, the wiring pattern 54 is formed of a metal film such as ITO (Indium Tin Oxide), Cr, or Al, a metal compound film, or a composite film thereof. Also good. The wiring pattern 54 may be electrically connected to an electrode (scanning electrode, signal electrode, counter electrode, etc.) that drives the liquid crystal. However, the wiring substrate 50 may be a resin substrate.

(3) About the process of mounting the semiconductor device 1 on the wiring board 50 The manufacturing method of the electronic device according to the present embodiment includes the process of mounting the semiconductor device 1 on the wiring board 50. Hereinafter, this process will be described with reference to the drawings.

  First, as shown in FIGS. 6A and 7A, the semiconductor device 1 and the wiring board 50 are opposed to each other with an interval therebetween. Here, the semiconductor device 1 is arranged so that the surface 15 of the semiconductor chip 10 faces the wiring substrate 50. In addition, the semiconductor device 1 and the wiring substrate 50 are aligned so that the electrical connection portion 42 (resin protrusion 20) of the semiconductor device 1 and the wiring pattern 54 of the wiring substrate 50 face (overlap). For example, the semiconductor device 1 may be held by a jig (bonding tool) (not shown), and the semiconductor device 1 and the wiring board 50 may be aligned. At this time, the semiconductor device 1 may be held such that the surface 15 is parallel to the wiring substrate 50. Note that a heater may be built in the jig, and thereby the semiconductor device 1 may be heated. By heating the semiconductor device 1, the electrical connection portion 42 is heated, and the electrical connection portion 42 and the wiring pattern 54 can be reliably electrically connected.

  Note that an adhesive material 72 may be provided between the semiconductor device 1 and the wiring board 50 in advance as shown in FIGS. 6A and 7A. The adhesive material 72 may be provided in a paste form or a film form. The adhesive material 72 may be an insulating material (NCP, NCF) that does not contain conductive particles or the like. For example, the adhesive material 72 may be provided on the wiring board 50.

  Thereafter, as shown in FIG. 6B and FIG. 6C, or FIG. 7B and FIG. 7C, the semiconductor device 1 and the wiring substrate 50 are brought close to each other and the electrical connection portion 42 is connected. The wiring pattern 54 is brought into contact with each other to electrically connect them. In this step, the resin protrusions 20 may be crushed by the semiconductor chip 10 and the wiring substrate 50 to elastically deform the resin protrusions 20 (FIGS. 6C and 7C). According to this, since the electrical connection part 42 and the wiring pattern 54 can be pressed by the elastic force of the resin protrusion 20, an electronic device with high electrical connection reliability can be manufactured.

  In this step, after the electrical connection portion 42 and the wiring pattern 54 are brought into contact with each other, the second portion 22 is brought into contact with the wiring board 50 (see FIG. 6C). That is, in this step, the semiconductor device 1 (semiconductor chip 10) and the wiring board 50 are brought close to each other until the second portion 22 contacts the wiring board 50. At this time, the second portion 22 may be brought into contact with the base substrate 52 of the wiring substrate 50. Alternatively, the second portion 22 may be brought into contact with the wiring pattern 54 of the wiring board 50.

  In this step, the resin portion 30 may be brought into contact with the wiring board 50 after the electrical connection portion 42 and the wiring pattern 54 are brought into contact (see FIG. 7C).

  In this step, the adhesive material 72 may be caused to flow by the semiconductor device 1 and the wiring substrate 50. Thereby, the adhesive material 72 may be filled between the semiconductor device 1 (semiconductor chip 10) and the wiring substrate 50 (see FIGS. 6C and 7C).

  Then, as shown in FIGS. 6C and 7C, an adhesive 70 is formed. The adhesive 70 can be formed by curing the adhesive material 72. The semiconductor device 1 and the wiring board 50 are bonded (fixed) with the adhesive 70. The distance between the semiconductor chip 10 and the wiring substrate 50 may be maintained by the adhesive 70. That is, the adhesive protrusion 70 may maintain the resin protrusion 20 in an elastically deformed state. For example, by forming the adhesive 70 in a state where the resin protrusion 20 is elastically deformed, the state where the resin protrusion 20 is elastically deformed can be maintained.

  Through the above steps, the electronic device 2 shown in FIG. 6C or FIG. 7C may be manufactured.

  The electronic device 2 may be a display device (panel module). In FIG. 8, the schematic of the electronic device 2 as a display device is shown. The display device may be, for example, a liquid crystal display device or an EL (Electrical Luminescence) display device. The semiconductor device 1 (semiconductor chip) may be a driver IC that controls the display device.

  9 and 10 show a notebook personal computer 1000 and a mobile phone 2000 as an example of an electronic apparatus having the electronic device 2.

(4) Operational Effects Hereinafter, the operational effects exhibited by the present invention will be described.

  As described above, according to the electronic device 2, the electrical connection portion 42 is pressed against the wiring pattern 54 by the elastic force of the resin protrusion 20 (first portion 21). Sex can be maintained. That is, in order to manufacture a highly reliable electronic device, it is necessary to press the resin protrusion 20 (first portion 21) between the semiconductor chip 10 and the wiring substrate 50. However, if the semiconductor chip 10 and the wiring substrate 50 are too close, the resin protrusion 20 may be destroyed. Therefore, in order to manufacture a highly reliable electronic device, it is necessary to control the distance between the semiconductor chip 10 and the wiring substrate 50. Conversely, if the distance between the semiconductor chip 10 and the wiring substrate 50 can be controlled, a highly reliable electronic device can be manufactured.

  By the way, according to the semiconductor device 1 described above, the resin protrusion 20 has the second portion 22 having a height lower than that of the first portion 21. Then, in the step of mounting the semiconductor device 1 on the wiring board 50, the second portion 22 of the resin protrusion 20 is brought into contact with the wiring board 50. When the second portion 22 comes into contact with the wiring substrate 50, the resin protrusion 20 is less likely to be deformed. Therefore, according to the semiconductor device 1, the distance between the semiconductor chip 10 (semiconductor device 1) and the wiring substrate 50 can be regulated by the second portion 22. Therefore, according to the semiconductor device 1, it is possible to manufacture an electronic device in which the semiconductor chip 10 and the wiring substrate 50 are arranged with an interval as designed. That is, according to the present invention, it is possible to provide a method for efficiently manufacturing a highly reliable electronic device in which the electrical connection portion 42 and the wiring pattern 54 are pressed with a load as designed, and the reliability is improved. A semiconductor device capable of efficiently manufacturing a high electronic device can be provided.

  In the process of mounting the semiconductor device 1 on the wiring board 50, when the resin protrusion 20 is pressed against the wiring board 50 (wiring pattern 54), the shape of the resin protrusion 20 follows the shape of the wiring board 50 (wiring pattern 54). And change. Specifically, as shown in FIG. 7C, the upper end surface of the first portion 21 of the resin protrusion 20 changes so as to face the wiring pattern 54, and the portion formed on the upper end surface of the wiring 40 ( The electrical connection portion 42) is in electrical contact with the wiring pattern 54. Therefore, the larger the area facing the wiring substrate 50 (wiring pattern 54) in the upper surface of the first portion 21, the larger the contact area between the wiring 40 and the wiring pattern 54, and the electrical connection between them. Reliability can be increased.

  By the way, when the height H of the first portion 21 and the width W of the bottom surface of the first portion 21 satisfy the relationship of H <W / 2, the first portion 21 is not greatly deformed. The connection area (contact area) between the electrical connection portion 42 (wiring 40) and the wiring pattern 54 can be increased. Therefore, an electronic device with high electrical connection reliability can be manufactured without applying a great stress to the resin protrusion 20 (first portion 21). Further, even when the first and second portions 21 and 22 use the resin protrusion 20 satisfying the relationship of Hh ≦ 5 μm, the electrical connection reliability between the electrical connection portion 42 and the wiring pattern 54 is improved. It becomes possible to secure. That is, a semiconductor device capable of ensuring the electrical connection reliability between the electrical connection portion 42 and the wiring pattern 54 even when the collapse amount of the first portion 21 is 5 μm or less (about 5 μm) is provided. can do.

  The present invention is not limited to the above-described embodiments, and various modifications can be made. For example, the present invention includes configurations that are substantially the same as the configurations described in the embodiments (for example, configurations that have the same functions, methods, and results, or configurations that have the same objects and effects). In addition, the invention includes a configuration in which a non-essential part of the configuration described in the embodiment is replaced. In addition, the present invention includes a configuration that exhibits the same operational effects as the configuration described in the embodiment or a configuration that can achieve the same object. Further, the invention includes a configuration in which a known technique is added to the configuration described in the embodiment.

4A and 4B illustrate a semiconductor device. 4A and 4B illustrate a semiconductor device. 10A and 10B illustrate a method for manufacturing a semiconductor device. 10A and 10B illustrate a method for manufacturing a semiconductor device. 10A and 10B illustrate a method for manufacturing a semiconductor device. The figure for demonstrating the manufacturing method of an electronic device. The figure for demonstrating the manufacturing method of an electronic device. The figure for demonstrating the manufacturing method of an electronic device. FIG. 14 illustrates an example of an electronic device. FIG. 14 illustrates an example of an electronic device.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Semiconductor device, 2 ... Electronic device, 10 ... Semiconductor chip, 11 ... Semiconductor substrate, 12 ... Integrated circuit, 14 ... Electrode, 16 ... Passivation film, 17 ... Long side, 20 ... Resin protrusion, 21 ... 1st part 22 ... second part, 25 ... resin material, 27 ... first resin member, 29 ... second resin member, 30 ... resin part, 40 ... wiring, 42 ... electrical connection part, 45 ... metal layer, 47 ... Mask, 50 ... Wiring substrate, 52 ... Base substrate, 54 ... Wiring pattern, 70 ... Adhesive, 72 ... Adhesive material, 100 ... Straight line, 200 ... Region

Claims (17)

A semiconductor chip on which an electrode is formed; a plurality of first portions arranged along a virtual straight line formed on a surface of the semiconductor chip on which the electrode is formed; and two adjacent first first parts The electrode having a resin protrusion including a second portion disposed between the portions and having a second height lower than that of the first portion; and an electrical connection portion disposed on the first portion; A step of preparing a semiconductor device having electrically connected wiring;
Preparing a wiring board having a base board and a wiring pattern formed on the base board;
Mounting the semiconductor device on the wiring board and bringing the electrical connection portion and the wiring pattern into contact with each other to electrically connect;
Including
In the step of mounting the semiconductor device on the wiring board,
A method for manufacturing an electronic device, wherein the second portion is brought into contact with the wiring board after the electrical connection portion and the wiring pattern are brought into contact with each other. In the manufacturing method of the electronic device of Claim 1,
In the resin protrusion of the semiconductor device, the height H of the first portion and the width W of the bottom surface of the first portion in the direction perpendicular to the imaginary straight line satisfy the relationship of H <W / 2. A manufacturing method of an electronic device having a shape to be filled. In the manufacturing method of the electronic device of Claim 2,
H ≦ 20 μm and
A method for manufacturing an electronic device in which W ≦ 50 μm. In the manufacturing method of the electronic device of Claim 2 or Claim 3,
H ≧ 5 μm and
An electronic device manufacturing method in which W ≧ 15 μm. In the manufacturing method of the electronic device in any one of Claims 1-4,
The method of manufacturing an electronic device, wherein the resin protrusion of the semiconductor device has a shape in which a height H of the first portion and a height h of the second portion satisfy a relationship of Hh ≦ 5 μm. In the manufacturing method of the electronic device in any one of Claims 1-5,
The method for manufacturing an electronic device, wherein the upper surface of the first portion is a convex curved surface. In the manufacturing method of the electronic device in any one of Claims 1-6,
In the method of manufacturing an electronic device, the resin protrusion of the semiconductor device has a bottom surface width of the second portion that is narrower than a bottom surface width of the first portion. In the manufacturing method of the electronic device in any one of Claims 1-7,
The semiconductor device further includes a resin portion formed on the surface and having a height lower than that of the first portion,
In the step of mounting the semiconductor device on the wiring board,
A method for manufacturing an electronic device, wherein the resin portion is brought into contact with the wiring board. In the manufacturing method of the electronic device of Claim 8,
The method of manufacturing an electronic device, wherein the resin portion has the same height as the second portion. A semiconductor chip on which electrodes are formed;
A plurality of first portions arranged along an imaginary straight line formed on a surface of the semiconductor chip on which the electrodes are formed, and the two adjacent first portions; A resin protrusion including a second portion having a height lower than that of the first portion;
A wiring electrically connected to the electrode having an electrical connection disposed on the first portion;
Have
The height H of the first portion and the width W of the bottom surface of the first portion in the direction orthogonal to the imaginary straight line satisfy the relationship of H <W / 2. The semiconductor device according to claim 10.
H ≦ 20 μm and
A semiconductor device in which W ≦ 50 μm. The semiconductor device according to claim 10 or 11,
H ≧ 5 μm and
A semiconductor device in which W ≧ 15 μm. The semiconductor device according to any one of claims 10 to 12,
The height H of the first portion and the height h of the second portion are semiconductor devices that satisfy a relationship of H−h ≦ 5 μm. The semiconductor device according to any one of claims 10 to 13,
A semiconductor device in which an upper surface of the first portion is a convex curved surface. The semiconductor device according to any one of claims 10 to 14,
The width of the bottom surface of the second portion is a semiconductor device narrower than the width of the bottom surface of the first portion. The semiconductor device according to any one of claims 10 to 15,
A semiconductor device further comprising a resin portion formed on the surface and having a height lower than that of the first portion. The semiconductor device according to claim 16.
The resin part is a semiconductor device having the same height as the second part.

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