JP2008091691A - Semiconductor device, electronic device, and manufacturing method of electronic device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device enabling to efficiently manufacture a highly reliable electronic device, to provide the highly reliable electronic device, and to provide a method of efficiently manufacturing the highly reliable electronic device. <P>SOLUTION: The semiconductor device includes a semiconductor substrate 10 having electrodes 12 formed thereon, resin protrusions 20 formed on a surface 15 where the electrodes 12 of the semiconductor substrate 10 are formed, wirings 30 having electric connection portions 32 disposed on the resin protrusions 20 and electrically connected to the electrodes 12, and resin portions 40 formed on the surface 15 and each having an internal space 42 opened toward a side opposite to the surface 15. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a semiconductor device, an electronic device, and an electronic device manufacturing method.

  In order to reduce the size of the electronic device, the outer shape of the semiconductor device is preferably small. However, as the roles of semiconductor devices have diversified, the integration of integrated circuits formed on semiconductor chips has progressed, and accordingly, the number of pins of semiconductor chips has increased. That is, at present, development of a semiconductor device capable of simultaneously satisfying the demands of miniaturization of a semiconductor device, high integration of an integrated circuit, and an increase in electrodes is in progress.

As a semiconductor device that can meet this demand, a semiconductor device of a type in which wiring is formed on a semiconductor chip has attracted attention. In this type of semiconductor device, the outer shape of the semiconductor device can be made substantially the same as the outer shape of the semiconductor chip, so that the semiconductor device can be downsized.
JP-A-2-272737

  If a semiconductor device is miniaturized and highly integrated, it becomes difficult to mount it on a wiring board or the like. However, in order to ensure the reliability of the electronic device, it is important to maintain the reliability of the semiconductor device even after mounting.

  An object of the present invention is to provide a semiconductor device capable of efficiently manufacturing a highly reliable electronic device, a highly reliable electronic device, and a method for efficiently manufacturing a highly reliable electronic device. is there.

(1) A semiconductor device according to the present invention includes:
A semiconductor substrate on which electrodes are formed;
Resin protrusions formed on the surface of the semiconductor substrate on which the electrodes are formed;
A wiring electrically connected to the electrode having an electrical connection disposed on the resin protrusion;
A resin portion formed in the surface and having an internal space that opens toward the opposite side of the surface;
including.

  According to the present invention, the resin portion is formed on the surface of the semiconductor substrate on which the electrode is formed. The resin portion has an internal space that opens toward the side opposite to the surface on which the electrodes of the semiconductor substrate are formed. Therefore, when the semiconductor device is mounted on a wiring board or the like, an adhesive material can be enclosed (filled) in the internal space of the resin part by the resin part and the wiring board. When the adhesive material is sealed in the internal space of the resin part, the resin part is difficult to deform even if the semiconductor device and the wiring board are pressed further, so the resin part regulates the distance between the semiconductor device and the wiring board. Can do. That is, according to the present invention, it is possible to provide a semiconductor device capable of easily controlling the distance between the semiconductor substrate and the wiring substrate when mounted on the wiring substrate.

(2) In this semiconductor device,
The internal space may be a space defined by a through hole formed in the resin portion.

  Specifically, the resin portion has a shape having a through hole, and the internal space may be a space partitioned by an inner wall surface (an inner wall surface and a semiconductor substrate) of the through hole.

(3) In this semiconductor device,
The internal space may be a space defined by a recess formed from the upper surface side of the resin portion.

  Specifically, the resin part has a shape having a recess, and the internal space may be a space defined by an inner wall surface of the recess.

(4) In this semiconductor device,
The resin portion may be lower in height than the resin protrusion.

  Specifically, the height of the resin portion may be lower than the portion overlapping the wiring (electrical connection portion) in the resin protrusion.

(5) In this semiconductor device,
The width of the resin portion may be narrower than the width of the resin protrusion.

(6) In this semiconductor device,
The resin part and the resin protrusion may be made of the same material.

(7) In this semiconductor device,
You may further include the coating | coated metal layer which coat | covers the at least upper end surface of the said resin part.

(8) In this semiconductor device,
The covering metal layer and the wiring may be made of the same material.

(9) In this semiconductor device,
The outer shape of the surface of the semiconductor substrate is rectangular,
The resin part may be arranged at four corners of the surface.

  According to this, in the process of mounting the semiconductor device on the wiring substrate, the distance between the semiconductor substrate and the wiring substrate is regulated at the four corners of the semiconductor substrate (semiconductor chip). For this reason, it is possible to prevent the semiconductor substrate (semiconductor chip) from being distorted by receiving pressure during mounting. In addition, the semiconductor device can be mounted on the wiring board so that the semiconductor device is parallel to the wiring board.

  One resin portion may be arranged in the peripheral region of each corner of the surface of the semiconductor chip. However, a plurality of resin portions may be arranged in the peripheral region of each corner portion of the surface.

(10) In this semiconductor device,
An integrated circuit is formed on the semiconductor substrate,
The resin portion may be arranged so as not to overlap with the integrated circuit.

  According to this, it is possible to provide a highly reliable semiconductor device capable of preventing a large pressure from being applied to the integrated circuit during mounting.

(11) In this semiconductor device,
The internal space may have a shape that becomes wider as the distance from the semiconductor substrate increases.

  According to this, it becomes easy to fill the internal space of the resin portion with the adhesive material.

(12) In this semiconductor device,
The outer shape of the resin portion may be circular in the top view.

  According to this, the pressure concerning a resin part can be disperse | distributed. Therefore, it is possible to provide a semiconductor device capable of preventing a large pressure from being applied to a specific position of the resin portion.

(13) An electronic device according to the present invention includes:
A wiring board having a base substrate and a wiring pattern;
A semiconductor chip having an electrode, a resin protrusion formed on a surface of the semiconductor chip on which the electrode is formed, and an electrical connection portion disposed on the resin protrusion, and electrically connected to the electrode And a resin portion having an internal space formed on the surface and opening toward the opposite side of the surface, so that the electrical connection portion is in contact with the wiring pattern. And the semiconductor device mounted on the wiring board so that the upper end surface of the resin portion is in contact with the wiring board;
An adhesive for bonding the wiring board and the resin portion;
Including
The adhesive is formed so as to fill the internal space.

  According to the present invention, the distance between the wiring board and the semiconductor device (semiconductor chip) is regulated by the resin portion. Therefore, according to the present invention, it is possible to provide a highly reliable electronic device that can maintain the distance between the wiring board and the semiconductor chip as designed.

(14) In this electronic device,
A coating metal layer is formed on the upper end surface of the resin portion,
The semiconductor device includes:
The covering metal layer may be mounted on the wiring board so as to be in contact with the wiring board.

(15) An electronic device manufacturing method according to the present invention includes:
Preparing a wiring board having a base substrate and a wiring pattern;
A semiconductor chip having an electrode, a resin protrusion formed on a surface of the semiconductor chip on which the electrode is formed, and an electrical connection portion disposed on the resin protrusion, and electrically connected to the electrode A step of preparing a semiconductor device having a wiring formed and a resin portion formed in the surface and having an internal space that opens toward the opposite side of the surface;
A step of facing the semiconductor device and the wiring board through an adhesive material;
The semiconductor device and the wiring board are brought close to each other while flowing the adhesive material, the electrical connection portion and the wiring pattern are brought into contact and electrically connected, and the upper end surface of the resin portion is connected to the wiring board. Filling the inner space with the adhesive material by contacting the inner space;
Curing the adhesive material to form an adhesive that bonds the semiconductor device and the wiring board;
including.

  According to the present invention, the adhesive material is filled into the internal space of the resin portion in the step of mounting the semiconductor device on the wiring board. That is, the adhesive material is sealed in the internal space of the resin portion by the resin portion and the wiring board. When the adhesive material is filled (enclosed) in the internal space of the resin portion, the resin portion is not easily deformed even when the semiconductor device and the wiring board are further pressed. Therefore, the interval between the semiconductor substrate and the wiring substrate can be regulated by the resin portion. That is, according to the present invention, it is possible to provide an electronic device manufacturing method capable of easily controlling the distance between the semiconductor substrate and the wiring substrate and efficiently manufacturing a highly reliable electronic device.

(16) In this electronic device manufacturing method,
A coating metal layer is formed on at least the upper end surface of the resin portion,
The coated metal layer may be brought into contact with the wiring board by bringing the semiconductor device and the wiring board close to each other.

  Embodiments to which the present invention is applied will be described below with reference to the drawings. However, the present invention is not limited to the following embodiments. Moreover, this invention shall include what combined the following content freely.

1. Semiconductor Device Hereinafter, a semiconductor device 1 according to an embodiment to which the present invention is applied will be described. FIG. 1A to FIG. 8 are diagrams for explaining a configuration of a semiconductor device according to the present embodiment and a manufacturing method thereof.

(1) Configuration of Semiconductor Device The configuration of the semiconductor device 1 according to the embodiment to which the present invention is applied will be described below. FIG. 1A to FIG. 1C are diagrams for describing the configuration of the semiconductor device 1. 1A is a top view of the semiconductor device 1, FIG. 1B is a partially enlarged view of the perspective view of the semiconductor device 1, and FIG. 1C is FIG. 1A. It is a partially expanded view of the IC-IC line cross section.

  As shown in FIGS. 1A to 1C, the semiconductor device according to the present embodiment includes a semiconductor substrate 10 on which a plurality of electrodes 12 are formed. The semiconductor substrate 10 may be a silicon substrate, for example. The semiconductor substrate 10 may have a chip shape. In this case, the outer shape of the surface 15 on which the electrode 12 is formed in the semiconductor substrate 10 may be rectangular (rectangular or square) as shown in FIG. However, the semiconductor substrate 10 may have a wafer shape (see FIG. 2A). One or a plurality of integrated circuits 14 (one for a semiconductor chip and a plurality for a semiconductor wafer) may be formed on the semiconductor substrate 10 (see FIG. 1C). The configuration of the integrated circuit 14 is not particularly limited. For example, the integrated circuit 14 may include an active element such as a transistor and a passive element such as a resistor, a coil, and a capacitor.

  As shown in FIGS. 1A and 1C, an electrode 12 is formed on the semiconductor substrate 10. The electrode 12 may be electrically connected to the inside of the semiconductor substrate 10. The electrode 12 may be electrically connected to the integrated circuit 14. Alternatively, a conductor (conductive pad) that is not electrically connected to the integrated circuit 14 may be referred to as the electrode 12. The electrode 12 may be a part of the internal wiring of the semiconductor substrate 10. At this time, the electrode 12 may be a portion of the internal wiring of the semiconductor substrate 10 that is used for electrical connection with the outside. The electrode 12 may be formed of a metal such as aluminum or copper.

The semiconductor substrate 10 may have a passivation film 16 as shown in FIG. The passivation film 16 is formed so as to expose the electrode 12. An opening that exposes the electrode 12 may be formed in the passivation film 16. The passivation film 16 may be formed so as to partially cover the electrode 12. The passivation film 16 may be formed so as to cover the periphery of the electrode 12 as shown in FIG. The passivation film may be, for example, an inorganic insulating film such as SiO ₂ or SiN. Alternatively, the passivation film 16 may be an organic insulating film such as a polyimide resin.

  The semiconductor device according to the present embodiment includes a resin protrusion 20 as shown in FIGS. The resin protrusion 20 is formed on the surface 15 of the semiconductor substrate 10. The resin protrusion 20 may be formed on the passivation film 16 as shown in FIGS. 1 (B) and 1 (C).

  The shape of the resin protrusion 20 is not particularly limited. When the outer shape of the surface 15 is rectangular, the resin protrusion 20 may have a shape extending in parallel with any side of the surface 15. For example, when the outer shape of the surface 15 is a rectangle, the resin protrusion 20 may have a shape extending along the long side of the rectangle. In this case, the resin protrusion 20 may be arranged in the peripheral region of the long side. Alternatively, the resin protrusion 20 may be circular in the top view. In this case, the resin protrusion 20 may have a hemispherical shape. Note that the hemispherical here includes not only a strict hemispherical shape but also a similar shape.

  In addition, the material of the resin protrusion 20 is not particularly limited, and any material that is already known may be applied. For example, the resin protrusion 20 is made of polyimide resin, silicone-modified polyimide resin, epoxy resin, silicone-modified epoxy resin, acrylic resin, phenol resin, silicone resin, modified polyimide resin, benzocyclobutene (BCB), polybenzoxazole (PBO). Polybenzoxazole) or other resin.

  The semiconductor device according to this embodiment includes a wiring 30 as shown in FIGS. The wiring 30 is electrically connected to the electrode 12. The wiring 30 includes an electrical connection portion 32 disposed on the resin protrusion 20. That is, a region of the wiring 30 that is disposed on the resin protrusion 20 (the upper surface of the resin protrusion 20) may be referred to as an electrical connection portion 32. The electrical connection portion 32 is a portion of the wiring 30 that is used for electrical connection with a conductive portion (such as a wiring pattern on a wiring board) of another electronic component. In the present embodiment, the wiring 30 may be referred to as an electrical connection portion 32 by referring to a region above the resin portion 40 described later (a region protruding from the resin portion 40).

  The material applicable to the wiring 30 is not particularly limited. The wiring 30 may be made of, for example, Au, TiW, Cu, Ni, Pd, Al, Cr, Ti, W, NiV, lead-free solder, or the like. Further, the structure of the wiring 30 is not particularly limited. For example, the wiring 30 may be formed of a plurality of layers. At this time, the wiring 30 may include a first layer formed of titanium tungsten and a second layer formed of gold (not shown). Alternatively, the wiring 30 may be formed of a single layer. The wiring 30 may be formed so as to be in contact with the passivation film 16. The wiring 30 may be formed so as to reach the passivation film 16 from the electrode 12 over the resin protrusion 20. That is, the wiring 30 may be formed on both sides of the resin protrusion 20 so as to be in contact with the passivation film 16 (surface 15).

  As shown in FIGS. 1A to 1C, the semiconductor device according to the present embodiment includes a resin portion 40. The resin part 40 is formed on the surface 15 of the semiconductor substrate 10. The resin part 40 may be formed on the passivation film 16.

  The resin portion 40 has an internal space 42 that opens toward the side opposite to the surface 15. For example, the resin portion 40 may have a shape having a through hole, and the internal space 42 may be a space defined by the through hole (the inner wall surface of the through hole and the passivation film 16). The upper end surface 44 of the resin portion 40 may have a shape surrounding a predetermined region. The internal space 42 may communicate with the predetermined area surrounded by the upper end surface 44. That is, an opening communicating with the internal space 42 may be formed in the upper end surface 44 of the resin portion 40. Note that the upper end surface 44 may be a surface parallel to the surface 15 of the semiconductor substrate 10. In addition, it can be said that the resin portion 40 has a shape having a side wall 46 that partitions the internal space 42.

  As shown in FIG. 1C, the resin portion 40 may be lower than the resin protrusion 20. Specifically, the height of the resin portion 40 may be lower than the region of the resin protrusion 20 that overlaps the wiring 30 (electrical connection portion 32). The height of the resin portion 40 may be lower than the resin protrusion 20 and higher than half of the resin protrusion 20. Note that the height of the resin portion 40 referred to here may be the size of the resin portion 40 in the thickness direction of the semiconductor substrate 10 (direction perpendicular to the surface 15). The height of the resin part 40 may be, for example, the height from the surface 15 of the semiconductor substrate 10 (the surface of the passivation film 16).

  The width of the resin portion 40 may be narrower than the width of the resin protrusion 20. Here, the width of the resin portion 40 may be the width of the side wall 46 of the resin portion 40. And in this Embodiment, the width | variety of the bottom face of the resin part 40 (side wall 46) may be narrower than the width | variety of the bottom face of the resin protrusion 20. FIG. That is, in FIG. 1C, L40 that is the width of the bottom surface of the resin portion 40 may be narrower than L20 that is the width of the bottom surface of the resin protrusion 20. The width of the bottom surface of the resin protrusion 20 may be a width in the direction in which the wiring 30 extends on the bottom surface of the resin protrusion 20.

  The internal space 42 of the resin portion 40 may have a shape that becomes wider as the distance from the semiconductor substrate 10 increases. That is, in the resin part 40, the diameter of the opening formed in the upper end surface 44 may be larger than the diameter of the opening formed in the bottom surface. For example, the resin part 40 may have a shape in which the width of the side wall 46 becomes thinner as the distance from the semiconductor substrate 10 increases.

  Note that the diameter of the bottom surface of the internal space 42 (the diameter of the opening formed in the bottom surface of the resin portion 40) may be smaller than the width of the resin protrusion 20. However, the present invention is not limited to this, and the diameter of the bottom surface of the internal space 42 may be larger than the width of the resin protrusion 20. Further, the diameter of the bottom surface of the resin portion 40 may be smaller than the width of the resin protrusion 20 or may be larger than the width of the resin protrusion 20.

  As shown in FIG. 1A, the outer shape of the resin portion 40 may be circular in the top view. At this time, the outer shape of the internal space 42 may also be circular in the top view. According to this, when the adhesive material 72 is filled in the internal space 42, the pressure applied to the resin part 40 can be dispersed. Note that the circular shape here includes not only a perfect circular shape but also a similar shape. However, as a modification, the outer shape of the resin portion 40 may be a polygon such as a rectangle or an ellipse.

  The resin part 40 may be arranged avoiding the integrated circuit 14 (so as not to overlap with the integrated circuit 14). The resin portion 40 may be arranged such that the internal space 42 does not overlap with the integrated circuit 14. According to this, it is possible to prevent a large pressure from being applied to the integrated circuit 14 in the process of mounting the semiconductor device 1 to be described later on the wiring board 50, and thus prevent the characteristics of the integrated circuit 14 from changing. can do. The resin portion 40 may be disposed outside the region where the integrated circuit 14 is formed. However, the resin portion 40 may be disposed on the formation region of the integrated circuit 14.

  The resin portion 40 may also be arranged so as not to overlap the electrode 12 and the resin protrusion 20. The resin portion 40 may be formed so that the internal space 42 does not overlap the electrode 12 and the resin protrusion 20. The resin portion 40 may be disposed in a region outside the region where the electrode 12 (resin protrusion 20) is formed.

  The resin part 40 may be arrange | positioned at the four corners of the rectangular surface 15, as shown to FIG. 1 (A) and FIG. 1 (C). For example, one resin portion 40 may be formed in the peripheral region of each corner of the surface 15. At this time, the semiconductor device may include four resin portions 40. However, the present invention is not limited to this. For example, the semiconductor device may have only one resin portion 40. Alternatively, the semiconductor device may have two, three, or five or more resin portions 40. In addition, when the some resin part 40 is formed, each resin part 40 may be formed in the same height.

  The material of the resin portion 40 is not particularly limited, but the same material as that of the resin protrusion 20 may be used. However, the resin portion 40 may be formed of a material different from that of the resin protrusion 20. The resin part 40 may be formed of a material harder than the resin protrusion 20, for example.

  The semiconductor device 1 according to the present embodiment may have the above configuration. Note that the operational effects of the semiconductor device 1 will be described later.

(2) Manufacturing Method of Semiconductor Device Hereinafter, a manufacturing method of the semiconductor device 1 according to the present embodiment will be described. 2A to 4C are views for explaining a method of manufacturing the semiconductor device 1.

  The method for manufacturing a semiconductor device according to this embodiment includes preparing a semiconductor substrate 11 shown in FIGS. 2 (A) and 2 (B). Here, FIG. 2A is a schematic view of the semiconductor substrate 11, and FIG. 2B is a partially enlarged view of a cross-sectional view of the semiconductor substrate 11.

  As shown in FIG. 2A, the semiconductor substrate 11 has a wafer shape. The wafer-like semiconductor substrate 11 has a region 100 to be a plurality of semiconductor chips (semiconductor substrate 10). However, a semiconductor chip (see FIG. 1A) may be prepared as a semiconductor substrate and the following steps may be performed.

  An electrode 12 is formed on the semiconductor substrate 11 as shown in FIG. The semiconductor substrate 11 may have a passivation film 16 that exposes the electrode 12.

  The manufacturing method of the semiconductor device according to the present embodiment includes forming the resin protrusion 20 and the resin portion 40 as shown in FIGS. In addition, although this embodiment demonstrates the method to form the resin protrusion 20 and the resin part 40 simultaneously, this invention is not limited to this.

  First, as shown in FIG. 3A, a resin material 25 is provided on the semiconductor substrate 11. Thereafter, as shown in FIG. 3B, a part of the resin material 25 is removed and the resin material 25 is patterned. Thereafter, the resin protrusion 25 and the resin portion 40 may be formed by curing (for example, thermosetting) the patterned resin material 25 as shown in FIG. In the present embodiment, the resin material 25 may be patterned so that the width of the portion that becomes the resin portion 40 is narrower than the width of the portion that becomes the resin protrusion 20 (FIG. 3B and FIG. 3 (C)). By curing and shrinking this, the resin portion 40 can be formed to be lower than the resin protrusion 20. However, the resin portion 40 may be formed by forming a resin member having the same height as the resin protrusion 20 and then reducing the height of the resin member. At this time, the step of reducing the height of the resin member may be performed after the step of forming the wiring 30 described later. According to this, the height of the region overlapping the wiring 30 in the resin protrusion 20 can be maintained before and after the step of reducing the height of the resin member.

  The method for manufacturing a semiconductor device according to the present embodiment includes forming a wiring 30 as shown in FIGS. 4A to 4C are diagrams for explaining an example of a process for forming the wiring 30. FIG.

  This step includes forming a metal layer 35 as shown in FIG. The metal layer 35 may be formed so as to cover the electrode 12, the passivation film 16, the resin protrusion 20, and the resin portion 40. The metal layer 35 can be formed by sputtering, for example. The metal layer 35 may be a single metal layer or a plurality of metal layers.

  Then, as shown in FIG. 4B, a mask 37 is formed on the metal layer 35. The mask 37 may be patterned so as to cover only a region of the metal layer 35 that becomes the wiring 30.

  Then, as shown in FIG. 4C, the wiring 30 can be formed by removing the exposed region from the mask 37 in the metal layer 35.

  However, the method of forming the wiring 30 is not limited to this, and any of known methods may be applied. The wiring 30 may be formed by applying, for example, an inkjet method or a plating method.

  Then, the semiconductor device 1 shown in FIGS. 1A to 1C can be manufactured through a process of cutting the semiconductor substrate 11 and an inspection process.

2. Hereinafter, an electronic device 2 according to an embodiment to which the present invention is applied will be described. FIG. 5A to FIG. 8 are diagrams for explaining the electronic device 2 according to the embodiment to which the present invention is applied.

(1) Manufacturing Method of Electronic Device Hereinafter, a manufacturing method of the electronic device 2 according to the embodiment to which the present invention is applied will be described. FIGS. 5A to 5C are diagrams for explaining a method for manufacturing an electronic device according to an embodiment to which the invention is applied.

  The electronic device manufacturing method according to the present embodiment includes preparing the semiconductor device 1. The semiconductor device 1 has one of the configurations described above.

  The method for manufacturing an electronic device according to the present embodiment includes preparing a wiring board 50. Hereinafter, the configuration of the wiring board 50 will be described.

  The wiring substrate 50 includes a base substrate 52 and a wiring pattern 54. The base substrate 52 (wiring substrate 50) may be a part of an electro-optical panel (liquid crystal panel, electroluminescence panel, etc.). At this time, the base substrate 52 may be, for example, a ceramic substrate or a glass substrate. The material of the wiring pattern 54 is not particularly limited. For example, the wiring pattern 54 is formed of a metal film such as ITO (Indium Tin Oxide), Cr, or Al, a metal compound film, or a composite film thereof. Also good. The wiring pattern 54 may be electrically connected to an electrode (scanning electrode, signal electrode, counter electrode, etc.) that drives the liquid crystal. However, the wiring substrate 50 may be a resin substrate.

  The electronic device manufacturing method according to the present embodiment includes mounting the semiconductor device 1 on the wiring board 50. In this step, the semiconductor device 1 is mounted on the wiring board 50, and the electrical connection portion 32 and the wiring pattern 54 are brought into contact and electrically connected. Further, in this step, the resin part 40 is brought into contact with the wiring board 50 and the internal space 42 of the resin part 40 is filled with the adhesive material 72. Hereinafter, the process of mounting the semiconductor device 1 on the wiring board 50 will be described with reference to FIGS.

  First, the semiconductor device 1 and the wiring board 50 are arranged with a space therebetween, and the both are aligned. For example, as shown in FIG. 5A, the semiconductor device 1 is disposed on the wiring substrate 50. Here, the semiconductor device 1 is disposed so that the surface 15 of the semiconductor substrate 10 faces the wiring substrate 50. Then, the semiconductor device 1 and the wiring substrate 50 are aligned so that the electrical connection portion 32 (resin protrusion 20) of the semiconductor device 1 and the wiring pattern 54 of the wiring substrate 50 face (overlap). For example, the semiconductor device 1 may be held by a jig (bonding tool) (not shown), and the semiconductor device 1 and the wiring board 50 may be aligned. At this time, the semiconductor device 1 may be held such that the surface 15 is parallel to the wiring substrate 50. Note that a heater may be built in the jig, and thereby the semiconductor device 1 may be heated. By heating the semiconductor device 1, the electrical connection portion 32 is heated, and the electrical connection portion 32 and the wiring pattern 54 can be reliably electrically connected.

  Note that an adhesive material 72 is provided in advance between the semiconductor device 1 and the wiring substrate 50. The adhesive material 72 may be provided in a paste form or a film form. The adhesive material 72 may be an insulating material (NCP, NCF) that does not contain conductive particles or the like. For example, the adhesive material 72 may be provided on the wiring board 50.

  Thereafter, as shown in FIG. 5B and FIG. 5C, the semiconductor device 1 and the wiring board 50 are brought close to each other to bring the electrical connection portion 32 and the wiring pattern 54 into contact with each other so that they are electrically connected. The resin part 40 is brought into contact with the wiring substrate 50 to fill the internal space 42 with the adhesive material 72. In this step, the resin protrusion 20 may be crushed by the semiconductor substrate 10 and the wiring substrate 50 to elastically deform the resin protrusion 20 as shown in FIG. According to this, since the electrical connection part 32 and the wiring pattern 54 can be pressed by the elastic force of the resin protrusion 20, an electronic device with high electrical connection reliability can be manufactured.

  In this step, the semiconductor device 1 and the wiring substrate 50 are brought close to each other so that the electrical connection portion 32 and the wiring pattern 54 are brought into contact as shown in FIG. 5B, and then the semiconductor device 1 (semiconductor substrate 10). Further, the resin substrate 40 may be brought into contact with the wiring board 50 so that the internal space 42 is filled with the adhesive material 72 (see FIG. 5C). At this time, the resin portion 40 may be brought into contact with the base substrate 52 of the wiring substrate 50. Alternatively, the resin part 40 may be brought into contact with the wiring pattern 54 of the wiring board 50.

  As described above, the resin portion 40 has the internal space 42 that opens toward the side opposite to the surface 15. Therefore, by mounting the semiconductor device 1 on the wiring substrate 50 so that the surface 15 of the semiconductor substrate 10 faces the wiring substrate 50 (facing the wiring substrate 50), an adhesive material is formed in the internal space 42 of the resin portion 40. 72 can be filled. Then, by bringing the semiconductor device 1 and the wiring board 50 close to each other and bringing the resin part 40 (the upper end surface 44 of the resin part 40) into contact with the wiring board 50, the adhesive material 72 filled in the internal space 42 is changed to the inside. It can be enclosed in the space 42. When the adhesive material 72 is enclosed (filled) in the internal space 42, the resin portion 40 is less likely to be deformed, so that the interval between the semiconductor substrate 10 and the wiring substrate 50 can be regulated. Therefore, even when the semiconductor device 1 and the wiring substrate 50 are further pressed, it is possible to prevent excessive deformation of the resin protrusion 20. Moreover, when the resin part 40 is arrange | positioned at the four corners of the semiconductor substrate 10, the semiconductor substrate 10 and the wiring board 50 can be easily arrange | positioned in parallel by the resin part 40. FIG. Therefore, the resin protrusion 20 can be uniformly crushed, and the force with which the electrical connection portion 32 and the wiring pattern 54 are pressed can be controlled uniformly. Furthermore, when the resin part 40 is formed at the four corners of the semiconductor substrate 10 (semiconductor chip), the occurrence of distortion of the semiconductor substrate 10 can be prevented. Moreover, when the height of the resin part 40 is lower than the resin protrusion 20, it becomes possible to make the electrical connection part 32 and the wiring pattern 54 contact reliably, and to improve the electrical connection reliability of both. it can.

  In addition, when the resin part 40 is arrange | positioned in the area | region which does not overlap with the integrated circuit 14, even if it presses the semiconductor device 1 (resin part 40) toward the wiring board 50, a big pressure is applied to the integrated circuit 14. Can be prevented. Therefore, the characteristics of the integrated circuit 14 can be maintained.

  In the step of mounting the semiconductor device 1 on the wiring board 50, the adhesive material 72 may be caused to flow by the semiconductor device 1 and the wiring board 50 (see FIGS. 5B and 5C). Thus, the adhesive material 72 may be filled between the semiconductor device 1 (semiconductor substrate 10) and the wiring substrate 50.

  Then, as shown in FIG. 5C, an adhesive 70 is formed between the semiconductor device 1 and the wiring substrate 50. The adhesive 70 can be formed by curing the adhesive material 72. The adhesive 70 is formed so as to fill the internal space 42. The semiconductor device 1 and the wiring board 50 are bonded (fixed) with the adhesive 70. The distance between the semiconductor substrate 10 and the wiring substrate 50 may be maintained by the adhesive 70. That is, the adhesive protrusion 70 may maintain the resin protrusion 20 in an elastically deformed state. For example, by forming the adhesive 70 in a state where the resin protrusion 20 is elastically deformed, the state where the resin protrusion 20 is elastically deformed can be maintained.

  Through the above steps, the electronic device 2 shown in FIG. 5C may be manufactured.

(2) Configuration of Electronic Device 2 The electronic device 2 has a wiring board 50. The wiring substrate 50 includes a base substrate 52 and a wiring pattern 54. The electronic device 2 includes a semiconductor device 1. According to the electronic device 2, the semiconductor device 1 is mounted on the wiring board 50. The semiconductor device 1 is mounted on the wiring board 50 so that the electrical connection portion 32 is in contact with the wiring pattern 54. The semiconductor device 1 is also mounted on the wiring board 50 so that the resin portion 40 is in contact with the wiring board 50. The electronic device 2 includes an adhesive 70 that bonds the semiconductor device 1 and the wiring substrate 50. The adhesive 70 is formed so as to fill the internal space 42 of the resin portion 40.

  The electronic device 2 may be a display device (panel module). In FIG. 6, the schematic of the electronic device 2 as a display device is shown. The display device may be, for example, a liquid crystal display device or an EL (Electrical Luminescence) display device. The semiconductor device 1 (semiconductor chip) may be a driver IC that controls the display device.

  7 and 8 show a notebook personal computer 1000 and a mobile phone 2000 as an example of an electronic apparatus having the electronic device 2.

3. Effect Hereinafter, the effect which this invention show | plays is demonstrated.

  As described above, the semiconductor device 1 has the resin portion 40. The resin portion 40 has an internal space 42 that opens toward the side opposite to the surface 15 (semiconductor substrate 10). Therefore, the adhesive material 72 can be filled in the internal space 42 by mounting the semiconductor device 1 on the wiring substrate 50 so that the surface 15 faces the wiring substrate 50. Then, the adhesive material 72 can be sealed in the internal space 42 by bringing the upper end surface 44 of the resin portion 40 into contact (pressing) with the wiring substrate 50. When the adhesive material 72 is sealed in the internal space 42, the resin portion 40 is hardly deformed by the pressure of the adhesive material 72. Therefore, according to the semiconductor device 1, the distance between the semiconductor substrate 10 and the wiring substrate 50 can be regulated by the resin portion 40 in the process of mounting the semiconductor device 1 on the wiring substrate 50. That is, according to the semiconductor device 1, since the resin protrusion 20 can be deformed to the designed height, the resin protrusion 20 is not sufficiently broken or deformed due to excessive deformation of the resin protrusion 20. Accordingly, it is possible to prevent a decrease in electrical connection reliability between the electrical connection portion 32 and the wiring pattern 54.

4). Modifications The present invention is not limited to the above-described embodiments, and various modifications can be made. For example, the present invention includes configurations that are substantially the same as the configurations described in the embodiments (for example, configurations that have the same functions, methods, and results, or configurations that have the same objects and effects). In addition, the invention includes a configuration in which a non-essential part of the configuration described in the embodiment is replaced. In addition, the present invention includes a configuration that exhibits the same operational effects as the configuration described in the embodiment or a configuration that can achieve the same object. Further, the invention includes a configuration in which a known technique is added to the configuration described in the embodiment.

  FIG. 9 is a diagram for explaining a semiconductor device 3 according to a modification of the embodiment to which the present invention is applied. As shown in FIG. 9, the semiconductor device 3 includes a covering metal layer 60. The covering metal layer 60 is formed on the surface of the resin protrusion 20. The covering metal layer 60 is formed so as to cover at least the upper end surface 44 of the resin portion 40. That is, it can be said that the coated metal layer 60 is formed on at least the upper end surface 44 of the resin portion 40. The covering metal layer 60 may be formed so as to cover the entire surface of the resin portion 40. At this time, the internal space 42 may be regarded as a space partitioned by the covering metal layer 60.

  The covering metal layer 60 may be electrically connected to the electrode 12 or may not be electrically connected to the electrode 12. The covering metal layer 60 may be electrically connected to the integrated circuit 14 or may not be electrically connected to the integrated circuit 14.

  The material of the covering metal layer 60 is not particularly limited, but the same material as that of the wiring 30 may be used.

  This semiconductor device 3 can also provide the same operational effects as the semiconductor device 1, and thus it is possible to efficiently manufacture highly reliable electronic devices.

  In the step of mounting the semiconductor device 3 on the wiring board 50, the covering metal layer 60 is brought into contact with the wiring board 50. At this time, the covering metal layer 60 may be brought into contact with the wiring pattern 54 of the wiring substrate 50 to electrically connect them. However, the covering metal layer 60 may be brought into contact with the base substrate 52 of the wiring substrate 50.

  Hereinafter, a method for manufacturing the semiconductor device 3 will be described with reference to FIGS. 10 and 11.

  First, the semiconductor substrate 11 (semiconductor substrate 10) is prepared, the resin protrusion 20 and the resin part 40 are formed on the semiconductor substrate 11, and the metal layer 35 is formed (see FIGS. 2A to 4A). .

  Then, as shown in FIG. 10, a mask 38 is formed on the metal layer 35. The mask 38 may be patterned so as to cover a region to be the wiring 30 and a region to be the covering metal layer 60 in the metal layer 35. That is, the mask 38 may be patterned so as to cover the resin portion 40.

  Then, by removing the exposed area from the mask 38 in the metal layer 35, the wiring 30 and the covering metal layer 60 may be formed as shown in FIG.

  Then, the semiconductor device 3 shown in FIG. 9 can be formed by removing the mask 38.

  FIG. 12 is a diagram for explaining a semiconductor device 4 according to another modification. In the present embodiment, the semiconductor device has a resin portion 80 as shown in FIG. The resin portion 80 has a shape having a recess formed from the upper surface side. That is, the internal space 82 of the resin portion 80 is a space defined by the inner wall surface of the recess formed from the upper surface side of the resin portion 80.

  Even this semiconductor device 4 can achieve the same effects as the semiconductor device 1, so that it is possible to efficiently manufacture highly reliable electronic devices.

4A and 4B illustrate a semiconductor device. 10A and 10B illustrate a method for manufacturing a semiconductor device. 10A and 10B illustrate a method for manufacturing a semiconductor device. 10A and 10B illustrate a method for manufacturing a semiconductor device. The figure for demonstrating the manufacturing method of an electronic device. The figure which shows the panel module as an example of an electronic device. An example of an electronic device. An example of an electronic device. 6A and 6B illustrate a semiconductor device according to a modified example. The figure for demonstrating the manufacturing method of the semiconductor device which concerns on a modification. The figure for demonstrating the manufacturing method of the semiconductor device which concerns on a modification. 6A and 6B illustrate a semiconductor device according to a modified example.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Semiconductor device, 2 ... Electronic device, 3 ... Semiconductor device, 4 ... Semiconductor device, 10 ... Semiconductor substrate, 11 ... Semiconductor substrate, 12 ... Electrode, 14 ... Integrated circuit, 15 ... Surface, 16 ... Passivation film, 20 ... Resin protrusion, 25 ... Resin material, 30 ... Wiring, 32 ... Electrical connection part, 35 ... Metal layer, 37 ... Mask, 38 ... Mask, 40 ... Resin part, 42 ... Internal space, 44 ... Upper end surface, 46 ... Side wall 50 ... Wiring substrate 52 ... Base substrate 54 ... Wiring pattern 60 ... Coated metal layer 70 ... Adhesive material 72 ... Adhesive material 80 ... Resin part 82 ... Internal space 100 ... Region

Claims (16)

A semiconductor substrate on which electrodes are formed;
Resin protrusions formed on the surface of the semiconductor substrate on which the electrodes are formed;
A wiring electrically connected to the electrode having an electrical connection disposed on the resin protrusion;
A resin portion formed in the surface and having an internal space that opens toward the opposite side of the surface;
A semiconductor device including: The semiconductor device according to claim 1,
The semiconductor device is a semiconductor device which is a space defined by a through hole formed in the resin portion. The semiconductor device according to claim 1,
The semiconductor device is a semiconductor device that is a space defined by a recess formed from the upper surface side of the resin portion. The semiconductor device according to any one of claims 1 to 3,
The resin part is a semiconductor device whose height is lower than the resin protrusion. The semiconductor device according to any one of claims 1 to 4,
The width of the resin part is a semiconductor device narrower than the width of the resin protrusion. The semiconductor device according to any one of claims 1 to 5,
The resin part and the resin protrusion are semiconductor devices made of the same material. The semiconductor device according to any one of claims 1 to 6,
A semiconductor device further comprising a covering metal layer covering at least an upper end surface of the resin portion. The semiconductor device according to claim 7.
A semiconductor device in which the covering metal layer and the wiring are made of the same material. The semiconductor device according to any one of claims 1 to 8,
The outer shape of the surface of the semiconductor substrate is rectangular,
The said resin part is a semiconductor device arrange | positioned at the four corners of the said surface. The semiconductor device according to any one of claims 1 to 9,
An integrated circuit is formed on the semiconductor substrate,
The semiconductor device is arranged so that the resin portion does not overlap with the integrated circuit. The semiconductor device according to any one of claims 1 to 10,
The semiconductor device has a shape in which the width of the internal space becomes wider as the distance from the semiconductor substrate increases. The semiconductor device according to any one of claims 1 to 11,
The external shape of the resin part is a semiconductor device which is circular in the top view. A wiring board having a base substrate and a wiring pattern;
A semiconductor chip having an electrode, a resin protrusion formed on a surface of the semiconductor chip on which the electrode is formed, and an electrical connection portion disposed on the resin protrusion, and electrically connected to the electrode And a resin portion having an internal space formed on the surface and opening toward the opposite side of the surface, so that the electrical connection portion is in contact with the wiring pattern. And the semiconductor device mounted on the wiring board so that the upper end surface of the resin portion is in contact with the wiring board;
An adhesive for bonding the wiring board and the resin portion;
Including
The adhesive is an electronic device formed to fill the internal space. The electronic device according to claim 13.
A coating metal layer is formed on the upper end surface of the resin portion,
The semiconductor device includes:
An electronic device mounted on the wiring board such that the covering metal layer is in contact with the wiring board. Preparing a wiring board having a base substrate and a wiring pattern;
A semiconductor chip having an electrode, a resin protrusion formed on a surface of the semiconductor chip on which the electrode is formed, and an electrical connection portion disposed on the resin protrusion, and electrically connected to the electrode A step of preparing a semiconductor device having a wiring formed and a resin portion formed in the surface and having an internal space that opens toward the opposite side of the surface;
A step of facing the semiconductor device and the wiring board through an adhesive material;
The semiconductor device and the wiring board are brought close to each other while flowing the adhesive material, the electrical connection portion and the wiring pattern are brought into contact and electrically connected, and the upper end surface of the resin portion is connected to the wiring board. Filling the inner space with the adhesive material by contacting the inner space;
Curing the adhesive material to form an adhesive that bonds the semiconductor device and the wiring board;
A method of manufacturing an electronic device comprising: In the manufacturing method of the electronic device of Claim 15,
A coating metal layer is formed on at least the upper end surface of the resin portion,
A method for manufacturing an electronic device, wherein the semiconductor device and the wiring board are brought close to each other and the covering metal layer is brought into contact with the wiring board.

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