JP4858161B2 - Semiconductor device and method for manufacturing electronic device - Google Patents

Description

  The present invention relates to a semiconductor device and an electronic device manufacturing method.

  In order to reduce the size of the electronic device, the outer shape of the semiconductor device is preferably small. However, as the roles of semiconductor devices have diversified, the integration of integrated circuits formed on semiconductor chips has progressed, and accordingly, the number of pins of semiconductor chips has increased. That is, at present, development of a semiconductor device capable of simultaneously satisfying the demands of miniaturization of a semiconductor device, high integration of an integrated circuit, and an increase in electrodes is in progress.

As a semiconductor device that can meet this demand, a semiconductor device of a type in which wiring is formed on a semiconductor chip has attracted attention. In this type of semiconductor device, the outer shape of the semiconductor device can be made substantially the same as the outer shape of the semiconductor chip, so that the semiconductor device can be reduced in size.
JP-A-2-272737

  If the semiconductor device is downsized, it becomes difficult to mount it on a wiring board or the like. However, in order to ensure the reliability of the electronic device, it is important to maintain the reliability of the semiconductor device even after mounting.

  An object of the present invention is to provide a semiconductor device capable of efficiently manufacturing a highly reliable electronic device and a method for efficiently manufacturing a highly reliable electronic device.

(1) A semiconductor device according to the present invention includes:
A semiconductor chip on which electrodes are formed;
A plurality of first portions arranged along a virtual straight line formed on a surface of the semiconductor chip on which the electrodes are formed; and the first portions arranged on the sides of the first portions. A resin protrusion including a second portion having a lower height than the portion;
A wiring electrically connected to the electrode having an electrical connection disposed on the first portion;
Have
The width of the bottom surface of the second portion in the direction orthogonal to the virtual straight line is narrower than the width of the bottom surface of the first portion in the direction orthogonal to the virtual straight line.

  According to the present invention, the width of the second portion is narrower than the width of the first portion. Therefore, compared with the case where the width of the second portion is the same as the width of the first portion, the restriction received by the first portion from the second portion is reduced, and the first portion is easily deformed. Therefore, when the semiconductor device is mounted on the wiring board, the stress generated in the first portion is reduced, so that it is possible to prevent wiring cracks and plastic deformation of the resin protrusions.

(2) In this semiconductor device,
A cross section obtained by cutting the first portion along a plane orthogonal to the virtual straight line and a cross section obtained by cutting the second portion along a plane orthogonal to the virtual straight line may be similar.

  According to this, the fluidity of the adhesive material can be increased when the semiconductor device is mounted on the wiring board. Therefore, a semiconductor device capable of manufacturing a highly reliable electronic device can be provided.

(3) In this semiconductor device,
The resin protrusion is
You may further contain the 3rd part arrange | positioned at the side of the said 2nd part and whose height is lower than the said 1st part.

  According to this, it is possible to provide a semiconductor device excellent in mountability in which the adhesive material easily flows.

(4) In this semiconductor device,
The width of the bottom surface of the third portion may be narrower than the width of the bottom surface of the second portion.

(5) In this semiconductor device,
A cross section obtained by cutting the second portion along a plane orthogonal to the virtual straight line may be similar to a cross section obtained by cutting the third portion along a plane orthogonal to the virtual straight line.

(6) In this semiconductor device,
The upper surface of the first portion may be a convex curved surface.

  At this time, the upper surfaces of the second part and the third part may also be convex curved surfaces.

(7) An electronic device manufacturing method according to the present invention includes:
Preparing a wiring board having a base board and a wiring pattern formed on the base board;
A semiconductor chip on which an electrode is formed; a plurality of first parts arranged on a virtual straight line formed on a surface of the semiconductor chip on which the electrode is formed; and a side of the first part A second portion having a height lower than that of the first portion, and a third portion having a height lower than that of the second portion disposed on the side of the second portion. Providing a semiconductor device having a resin protrusion including, and a wiring electrically connected to the electrode having an electrical connection portion disposed on the first portion;
While causing the adhesive material disposed between the semiconductor device and the wiring board to flow, the semiconductor device and the wiring board are brought close to each other, and the electrical connection portion and the wiring pattern are brought into contact with each other electrically. Connecting, and
Curing the adhesive material to form an adhesive that bonds the semiconductor device and the wiring board;
Including
In the step of bringing the semiconductor device and the wiring board close together,
The semiconductor device and the wiring substrate are brought close to each other so that the second portion of the resin protrusion is in contact with the wiring substrate and the third portion is not in contact with the wiring substrate.

  According to the present invention, the adhesive material can easily flow between the semiconductor device and the wiring board in the step of mounting the semiconductor device on the wiring board. Therefore, bubbles are less likely to be generated inside the adhesive, and a highly reliable electronic device can be efficiently manufactured.

(8) In this electronic device manufacturing method,
The width in the direction perpendicular to the virtual line on the bottom surface of the second part is narrower than the width in the direction perpendicular to the virtual line on the bottom surface of the first part,
A width of the bottom surface of the third portion in a direction orthogonal to the virtual straight line may be narrower than a width of the bottom surface of the second portion in a direction orthogonal to the virtual straight line.

  Embodiments to which the present invention is applied will be described below with reference to the drawings. However, the present invention is not limited to the following embodiments. Moreover, this invention shall include what combined the following content freely.

  Hereinafter, the configuration of the semiconductor device 1 will be described with reference to FIGS. Here, FIG. 1A is a top view of the semiconductor device 1, FIG. 1B is a perspective view of the semiconductor device 1, and FIG. 1C is an IC-IC line in FIG. FIG. 1D is a partially enlarged view of a cross section taken along the line ID-ID in FIG. FIG. 2 is an enlarged perspective view showing the first portion 21 of the resin protrusion 20 and the wiring 40.

  The semiconductor device 1 according to the present embodiment has a semiconductor chip 10. The semiconductor chip 10 may be a silicon chip, for example. An integrated circuit 12 may be formed on the semiconductor chip 10 (see FIG. 1C). The configuration of the integrated circuit 12 is not particularly limited, and may include, for example, an active element such as a transistor or a passive element such as a resistor, a coil, or a capacitor.

  An electrode 14 is formed on the semiconductor chip 10. The electrode 14 may be electrically connected to the inside of the semiconductor chip 10. The electrode 14 may be electrically connected to the integrated circuit 12. Alternatively, a conductor (conductive pad) that is not electrically connected to the integrated circuit 12 may be referred to as the electrode 14. The electrode 14 may be a part of the internal wiring of the semiconductor chip 10. At this time, the electrode 14 may be a portion of the internal wiring of the semiconductor chip 10 that is used for electrical connection with the outside. The electrode 14 may be formed of a metal such as aluminum or copper. Further, a cap layer such as TiN or Ni may be provided on the surface of the electrode 14. The surface 15 on which the electrode 14 is formed in the semiconductor chip 10 may be rectangular (rectangular or square).

As shown in FIGS. 1C and 1D, the semiconductor chip 10 may have a passivation film 16. The passivation film 16 is formed so as to expose the electrode 14. An opening that exposes the electrode 14 may be formed in the passivation film 16. The passivation film 16 may be formed so as to partially cover the electrode 14. The passivation film 16 may be formed so as to cover the periphery of the electrode 14 as shown in FIG. The passivation film may be, for example, an inorganic insulating film such as SiO ₂ or SiN. Alternatively, the passivation film 16 may be an organic insulating film such as a polyimide resin.

  The semiconductor device according to the present embodiment includes a resin protrusion 20 as shown in FIGS. 1 (A) to 1 (D). The resin protrusion 20 is formed on the surface 15 on which the electrode 14 of the semiconductor chip 10 is formed. The resin protrusion 20 may be formed on the passivation film 16 as shown in FIGS. 1 (C) and 1 (D).

  As shown in FIG. 1A, the resin protrusion 20 may have a shape extending along a virtual straight line 100. The straight line 100 may be a straight line parallel to any side of the surface 15 of the semiconductor chip 10. For example, the straight line 100 may be a straight line parallel to the long side 17 of the surface 15. The resin protrusion 20 may be disposed in the peripheral region of the long side 17 on the surface 15. However, the virtual straight line may be a straight line parallel to the short side of the surface 15.

  The resin protrusion 20 includes a plurality of first portions 21 arranged along the straight line 100, and a second portion 22 disposed on the side of the first portion 21 (FIG. 1B and FIG. 1 (D)). As shown in FIG. 1D, the resin protrusion 20 has a height h <b> 1 of the first portion 21 higher than a height h <b> 2 of the second portion 22. In addition, the height said here may be the width | variety of the thickness direction (direction orthogonal to the surface 15) of the semiconductor chip 10 of the resin protrusion 20. FIG. The height of the first portion 21 may be the distance from the surface 15 (passivation film 16) to the apex of the first portion 21. Further, the height of the second portion 22 may be a distance from the surface 15 (passivation film 16) to the apex of the second portion 22. The height h1 of the first portion 21 and the height h2 of the second portion 22 may satisfy the relationship of h1-h2 ≦ 5 μm.

  The first portion 21 may have a shape in which the height h1 and the width W of the bottom surface satisfy the relationship of h1 <W / 2 (see FIG. 2). Here, the width of the bottom surface is a length in a direction perpendicular to the straight line 100 on the bottom surface. Alternatively, the width of the bottom surface may be the length of the bottom surface in the direction in which a wiring 40 described later extends. In the present embodiment, the shape of the first portion 21 may be h1 ≦ 20 μm and W ≦ 50 μm. The shape of the first portion 21 may also be h1 ≧ 5 μm and W ≧ 15 μm. Further, the upper surface of the first portion 21 may have a convex curved surface. The upper surface of the first portion 21 may be a part of an arc. Alternatively, the upper surface of the first portion 21 may be a part of an elliptical arc.

  In the present embodiment, the width of the bottom surface of the second portion 22 is narrower than the width of the bottom surface of the first portion 21 as shown in FIGS. 1 (A) and 1 (B). The cross-sectional shape obtained by cutting the second portion 22 along a plane orthogonal to the straight line 100 may be similar to the cross-sectional shape obtained by cutting the first portion 21 along a plane orthogonal to the straight line 100.

  The resin protrusion 20 may further include a third portion 23 disposed on the side of the second portion 22. The third portion 23 is lower in height than the second portion 22. That is, if the height of the third portion 23 is h3, the relationship of h2> h3 is satisfied. Further, the width of the third portion 23 is narrower than the width of the second portion 22. The second portion 22 and the third portion 23 may have similar cross-sectional shapes cut along a plane orthogonal to the straight line 100. However, the present invention is not limited to this, and may have a structure without the third portion 23.

  The material of the resin protrusion 20 is not particularly limited, and any known material may be applied. For example, the resin protrusion 20 is made of polyimide resin, silicone-modified polyimide resin, epoxy resin, silicone-modified epoxy resin, acrylic resin, phenol resin, silicone resin, modified polyimide resin, benzocyclobutene (BCB), polybenzoxazole (PBO). Polybenzoxazole) or other resin.

  The semiconductor device according to this embodiment includes a wiring 40 as shown in FIGS. The wiring 40 is electrically connected to the electrode 14. The wiring 40 may be formed so as to extend from the electrode 14 to the passivation film 16 over the resin protrusion 20. That is, the wiring 40 may be formed on both sides of the resin protrusion 20 so as to be in contact with the passivation film 16 (surface 15). A portion of the resin protrusion 20 that overlaps the wiring 40 is the first portion 21. In other words, the second and third portions 22 and 23 of the resin protrusion 20 are portions exposed from the wiring 40.

  The wiring 40 includes an electrical connection portion 42. Here, the electrical connection portion 42 is a region disposed on the resin protrusion 20 (first portion 21) in the wiring 40. The electrical connection portion 42 is a portion of the wiring 40 that is used for electrical connection with a conductive portion (such as a wiring pattern of a wiring board) of another electronic component. In the present embodiment, a region of the wiring 40 that is disposed at a position higher than the second portion 22 (a region protruding from the second portion 22) may be referred to as the electrical connection portion 42. .

  The material applicable to the wiring 40 is not particularly limited. The wiring 40 may be made of, for example, Au, TiW, Cu, Ni, Pd, Al, Cr, Ti, W, NiV, lead-free solder, or the like. Further, the structure of the wiring 40 is not particularly limited. For example, the wiring 40 may be formed of a plurality of layers. At this time, the wiring 40 may include a first layer formed of titanium tungsten and a second layer formed of gold (not shown). Alternatively, the wiring 40 may be formed of a single layer.

  The semiconductor device 1 may have the above configuration.

  Although the method for manufacturing the semiconductor device 1 is not particularly limited, an example of a method for manufacturing the semiconductor device 1 will be described below.

  First, the semiconductor substrate 11 shown in FIGS. 3A to 3C is prepared. Here, FIG. 3A is a schematic view of the semiconductor substrate 11, and FIG. 3B is a partially enlarged view of a cross-sectional view of the semiconductor substrate 11. FIG. 3C is a partially enlarged view of the top view (plan view) of the semiconductor substrate 11.

  As shown in FIG. 3A, the semiconductor substrate 11 has a wafer shape. The wafer-like semiconductor substrate 11 has a region 200 to be a plurality of semiconductor chips (semiconductor chips 10). However, a semiconductor chip (see FIG. 1A) may be prepared as a semiconductor substrate and the following steps may be performed.

  As shown in FIGS. 3B and 3C, an electrode 14 is formed on the semiconductor substrate 11. The semiconductor substrate 11 may have a passivation film 16 that exposes the electrode 14.

  Next, the resin member 27 is formed on the semiconductor substrate 11. The method for forming the resin member 27 is not particularly limited, but an example thereof will be described with reference to FIGS. 4 (A) to 4 (D).

  First, the resin material 25 is provided on the semiconductor substrate 11 (see FIG. 4 (A)), the resin material 25 is patterned (see FIG. 4 (B)), and the resin member 27 is cured (for example, thermosetting). (See FIGS. 4C and 4D). The resin member 27 is a member that becomes the resin protrusion 20 by an etching process described later. The bottom surface and height of the resin member 27 can be controlled by adjusting the height and width of the resin material 25, the curing conditions, and the like.

  Next, the wiring 40 is formed, and the resin protrusion 25 is formed by patterning the resin material 25. FIG. 5A to FIG. 9B are diagrams for explaining these steps.

  First, as shown in FIGS. 5A to 5C, a metal layer 45 is formed on the semiconductor substrate 11. The metal layer 45 may be formed so as to cover the electrode 14, the passivation film 16, and the resin member 27. The metal layer 45 may be formed so as to be electrically connected to the electrode 14. The metal layer 45 can be formed by sputtering, for example. The metal layer 45 may be a single metal layer or a plurality of metal layers.

  6A and 6B, a part of the metal layer 45 is removed, and an opening 46 that exposes a part of the resin member 27 is formed in the metal layer 45. In this step, the opening 46 is formed so as to expose (overlapping) the region to be the third portion 23 in the resin member 27. The method for forming the opening 46 in the metal layer 45 is not particularly limited, and any known method may be applied. For example, the opening 46 may be formed in the metal layer 45 by forming a mask having an opening in the metal layer 45 and removing the exposed portion of the metal layer 45 from the mask.

  Then, as shown in FIGS. 7A and 7B, the exposed region from the opening 46 in the resin member 27 is etched to remove a part thereof. In this step, a part of the exposed portion of the resin member 27 is removed, and as shown in FIGS. 7A and 7B, the height of the exposed portion is lowered and the width of the exposed portion is narrowed. To do. By performing isotropic etching, such a process becomes possible.

  Then, as shown in FIGS. 8A and 8B, the metal layer 45 is patterned to form the wiring 40. The method for patterning the metal layer 45 is not particularly limited, and any known method may be applied. For example, the wiring 40 may be formed by forming a mask on the metal layer 45 and patterning the metal layer 45. In this case, the shape of the wiring 40 can be controlled by adjusting the shape of the mask.

  Then, as shown in FIGS. 9A and 9B, the exposed portion of the resin member 27 from the wiring 40 is etched to remove a part thereof. In this step, by etching the exposed portion of the resin member 27 from the wiring 40, the height of the exposed portion is reduced and the width thereof is reduced. By performing isotropic etching, such a process becomes possible.

  Note that the width and height of the second portion 22 and the third portion 23 can be controlled by adjusting the etching solution, the etching time, or the plasma etching conditions and the plasma etching time. Then, by adjusting the etching conditions of the resin member 27, the resin protrusion 20 can be formed so that the cross sections of the first to third portions 21, 22, and 23 have similar shapes.

  Then, the semiconductor device 1 shown in FIGS. 1A to 1D can be manufactured through a process of cutting the semiconductor substrate 11 and dividing it into individual pieces, an inspection process, and the like.

  Next, a process of mounting the semiconductor device 1 according to the present embodiment on the wiring board 50 will be described. FIG. 10A to FIG. 11D are diagrams for explaining a process of mounting the semiconductor device 1 on the wiring board 50.

  First, the configuration of the wiring board 50 will be described. The wiring substrate 50 includes a base substrate 52 and a wiring pattern 54. The base substrate 52 (wiring substrate 50) may be a part of an electro-optical panel (liquid crystal panel, electroluminescence panel, etc.). At this time, the base substrate 52 may be, for example, a ceramic substrate or a glass substrate. The material of the wiring pattern 54 is not particularly limited. For example, the wiring pattern 54 is formed of a metal film such as ITO (Indium Tin Oxide), Cr, or Al, a metal compound film, or a composite film thereof. Also good. The wiring pattern 54 may be electrically connected to an electrode (scanning electrode, signal electrode, counter electrode, etc.) that drives the liquid crystal. However, the wiring substrate 50 may be a resin substrate.

  In the step of mounting the semiconductor device 1 on the wiring substrate 50, first, as shown in FIGS. 10A and 11A, the semiconductor device 1 and the wiring substrate 50 are opposed to each other with a space therebetween. Here, the semiconductor device 1 is arranged so that the surface 15 of the semiconductor chip 10 faces the wiring substrate 50. Further, the positions of the semiconductor device 1 and the wiring substrate 50 are such that the electrical connection portion 42 (the first portion 21 of the resin protrusion 20) of the semiconductor device 1 and the wiring pattern 54 of the wiring substrate 50 face (overlap). Align. For example, the semiconductor device 1 may be held by a jig (bonding tool) (not shown), and the semiconductor device 1 and the wiring board 50 may be aligned. At this time, the semiconductor device 1 may be held such that the surface 15 is parallel to the wiring substrate 50. Note that a heater may be built in the jig, and thereby the semiconductor device 1 may be heated. By heating the semiconductor device 1, the electrical connection portion 42 is heated, and the electrical connection portion 42 and the wiring pattern 54 can be reliably electrically connected.

  Note that an adhesive material 72 may be provided between the semiconductor device 1 and the wiring board 50 in advance as shown in FIGS. 10 (A) and 11 (A). The adhesive material 72 may be provided in a paste form or a film form. The adhesive material 72 may be an insulating material (NCP, NCF) that does not contain conductive particles or the like. For example, the adhesive material 72 may be provided on the wiring board 50.

  Thereafter, as shown in FIG. 10B and FIG. 10C, or FIG. 11B and FIG. 11C, the semiconductor device 1 and the wiring substrate 50 are brought close to each other and the electrical connection portion 42 is connected. The wiring pattern 54 is brought into contact with each other to electrically connect them. In this step, the resin protrusion 20 may be crushed by the semiconductor chip 10 and the wiring substrate 50 to elastically deform the resin protrusion 20 (first portion 21) (FIGS. 10C and 11C). . According to this, since the electrical connection part 42 and the wiring pattern 54 can be pressed by the elastic force of the resin protrusion 20, an electronic device with high electrical connection reliability can be manufactured.

  In this step, as shown in FIG. 10B, after the electrical connection portion 42 and the wiring pattern 54 are brought into contact, the second portion 22 may be brought into contact with the wiring board 50 (FIG. C)). That is, in this step, the semiconductor device 1 (semiconductor chip 10) and the wiring board 50 may be brought close to each other until the second portion 22 contacts the wiring board 50. At this time, the second portion 22 may be brought into contact with the base substrate 52 of the wiring substrate 50. Alternatively, the second portion 22 may be brought into contact with the wiring pattern 54 of the wiring board 50.

  In this step, the distance between the semiconductor device 1 and the wiring board 50 may be controlled so that the third portion 23 does not contact the wiring board 50 (see FIG. 10C). Thereby, the fluidity of the adhesive material 72 can be improved in the process of mounting the semiconductor device 1 on the wiring board 50.

  In this step, the adhesive material 72 may be caused to flow by the semiconductor device 1 and the wiring substrate 50. Thereby, the adhesive material 72 may be filled between the semiconductor device 1 (semiconductor chip 10) and the wiring substrate 50 (see FIGS. 10C and 11C).

  Then, as shown in FIGS. 10D and 11D, an adhesive 70 is formed. The adhesive 70 can be formed by curing the adhesive material 72. The semiconductor device 1 and the wiring board 50 are bonded (fixed) with the adhesive 70. The distance between the semiconductor chip 10 and the wiring substrate 50 may be maintained by the adhesive 70. That is, the adhesive protrusion 70 may maintain the resin protrusion 20 in an elastically deformed state. For example, by forming the adhesive 70 in a state where the resin protrusion 20 is elastically deformed, the state where the resin protrusion 20 is elastically deformed can be maintained.

  Through the above steps, the electronic device 2 shown in FIG. 10D or FIG. 11D may be manufactured.

  The electronic device 2 may be a display device (panel module). In FIG. 12, the schematic of the electronic device 2 as a display device is shown. The display device may be, for example, a liquid crystal display device or an EL (Electrical Luminescence) display device. The semiconductor device 1 (semiconductor chip) may be a driver IC that controls the display device.

  13 and 14 show a notebook personal computer 1000 and a mobile phone 2000 as an example of an electronic apparatus having the electronic device 2.

  Hereinafter, the effect which semiconductor device 1 concerning an embodiment to which the present invention is applied shows is explained.

  As described above, in the electronic device 2, the electrical connection portion 42 is pressed against the wiring pattern 54 by the elastic force of the resin protrusion 20 (first portion 21), and thereby the electrical connection reliability between the two. Can be maintained. That is, in order to manufacture a highly reliable electronic device, it is preferable that the resin protrusion 20 (first portion 21) is pressed and elastically deformed by the semiconductor chip 10 and the wiring substrate 50.

  By the way, according to the semiconductor device 1 according to the present embodiment, the resin protrusion 20 includes the first portion 21 that presses the electrical connection portion 42 against the wiring pattern 54, and the second height that is lower than the first portion 21. Part 22. The second portion 22 is narrower than the first portion 21. For this reason, according to the resin protrusion 20, the restriction that the first portion 21 receives from the second portion 22 is smaller than when the first portion and the second portion have the same width. Therefore, according to the semiconductor device 1, the first portion 21 is easily deformed, and local large stress is hardly generated in the first portion 21 when the first portion 21 is mounted on the wiring board 50. Therefore, it is possible to provide a semiconductor device capable of preventing cracks from occurring in the wiring 40 (electrical connection portion 42) when mounted on the wiring board 50. Moreover, since it becomes difficult to generate | occur | produce a big stress in the 1st part 21, it can prevent that the 1st part 21 (resin protrusion 20) deforms plastically. Therefore, it is possible to manufacture a highly reliable electronic device in which the electrical connection portion 42 and the wiring pattern 54 are pressed by the elastic force of the resin protrusion 20 (first portion 21).

  In addition, since the second portion 22 is narrower than the first portion 21, the surface area of the resin protrusion 20 is larger than when both widths are the same. Therefore, according to the present invention, a contact area between the resin protrusion 20 and the adhesive 70 is widened, and a highly reliable electronic device with high adhesion between the resin protrusion 20 and the adhesive 70 can be manufactured. .

  Further, since the second portion 22 is narrower than the first portion 21, the surface distance of the resin protrusion is increased between the adjacent wirings 40 (electrical connection portions 42). Therefore, according to the present invention, it is possible to manufacture a highly reliable electronic device that can prevent migration.

  Further, when the resin protrusion 20 has the third portion 23, the adhesive material 72 is interposed between the third portion 23 and the wiring substrate 50 even after the second portion 22 contacts the wiring substrate 50. It can be made to flow. Therefore, the adhesive 70 can be formed so that bubbles are not generated inside.

  Further, when the resin protrusion 20 (first to third portions 21, 22, 23) has a shape having a similar cross section when cut along a plane orthogonal to the straight line 100, the semiconductor device 1 is used as a wiring board. In the mounting process, the adhesive material 72 easily flows. Therefore, it becomes difficult to generate bubbles in the adhesive 70, and it becomes possible to efficiently manufacture a highly reliable electronic device.

  Further, when the semiconductor device 1 is mounted on the wiring board 50, if the second portion 22 comes into contact with the wiring board 50, the resin protrusion 20 is hardly deformed further. Therefore, according to the semiconductor device 1, the distance between the semiconductor chip 10 (semiconductor device 1) and the wiring substrate 50 can be regulated by the second portion 22. Therefore, according to the semiconductor device 1, it is possible to manufacture an electronic device in which the semiconductor chip 10 and the wiring substrate 50 are arranged with an interval as designed. That is, according to the present invention, it is possible to provide a semiconductor device that can efficiently manufacture a highly reliable electronic device in which the electrical connection portion 42 and the wiring pattern 54 are pressed with a load as designed.

  The present invention is not limited to the above-described embodiments, and various modifications can be made. For example, the present invention includes configurations that are substantially the same as the configurations described in the embodiments (for example, configurations that have the same functions, methods, and results, or configurations that have the same objects and effects). In addition, the invention includes a configuration in which a non-essential part of the configuration described in the embodiment is replaced. In addition, the present invention includes a configuration that exhibits the same operational effects as the configuration described in the embodiment or a configuration that can achieve the same object. Further, the invention includes a configuration in which a known technique is added to the configuration described in the embodiment.

4A and 4B illustrate a structure of a semiconductor device. 4A and 4B illustrate a structure of a semiconductor device. 10A and 10B illustrate a method for manufacturing a semiconductor device. 10A and 10B illustrate a method for manufacturing a semiconductor device. 10A and 10B illustrate a method for manufacturing a semiconductor device. 10A and 10B illustrate a method for manufacturing a semiconductor device. 10A and 10B illustrate a method for manufacturing a semiconductor device. 10A and 10B illustrate a method for manufacturing a semiconductor device. 10A and 10B illustrate a method for manufacturing a semiconductor device. The figure for demonstrating the manufacturing method of an electronic device. The figure for demonstrating the manufacturing method of an electronic device. The figure which shows the display device as an example of an electronic device. FIG. 14 illustrates an example of an electronic device. FIG. 14 illustrates an example of an electronic device.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Semiconductor device, 2 ... Electronic device, 10 ... Semiconductor chip, 11 ... Semiconductor substrate, 12 ... Integrated circuit, 14 ... Electrode, 15 ... Surface, 16 ... Passivation film, 17 ... Long side, 20 ... Resin protrusion, 21 ... 1st part, 22 ... 2nd part, 23 ... 3rd part, 25 ... Resin material, 27 ... Resin part, 27 ... Resin part, 27 ... Resin member, 40 ... Wiring, 42 ... Electrical connection part, 45 ... Metal layer, 46 ... Opening, 50 ... Wiring substrate, 52 ... Base substrate, 54 ... Wiring pattern, 70 ... Adhesive, 72 ... Adhesive material, 100 ... Linear, 200 ... Region

Claims (5)

A semiconductor chip on which electrodes are formed;
Wherein the electrode of the semiconductor chip is formed on the formed face, a first part component having a first height, have a second height had lower than said first height, and the second second part component in contact with the first portion, said second height has a low third height than, and a third portion in contact with said second portion, and a resin protrusion including,
A wiring for electrically connecting the electrical connection portion disposed in the first portion and the electrode;
Have
The first portion, the second portion, and the third portion are disposed along a first direction;
Perpendicular to said surface of said semiconductor chip, and in a second direction perpendicular to the first direction, the length of the second portion in the surface of the semiconductor chip is in the plane of the front Symbol semiconductor chip the first rather short than the length of the portion, the length of the third portion of the surface of the semiconductor chip, wherein the short Ikoto than a length of the second portion in the surface of the semiconductor chip It shall be the semi-conductor device. The semiconductor device according to claim 1,
Wherein a cross-section of the first portion taken along a plane perpendicular to the first direction, the semiconductor device is a similar figure to the cross section of the second portion taken along a plane perpendicular to the first direction. The semiconductor device according to claim 1 or 2,
A semiconductor device in which a cross section obtained by cutting the second portion along a plane perpendicular to the first direction and a cross section obtained by cutting the third portion along a plane orthogonal to the first direction are similar to each other. The semiconductor device according to any one of claims 1 to 3,
A semiconductor device in which an upper surface of the first portion is a convex curved surface. Preparing a wiring board having a base board and a wiring pattern formed on the base board;
A semiconductor chip on which an electrode is formed, and a first portion having a first height and arranged in a first direction on the surface of the semiconductor chip on which the electrode is formed, in the first direction A second portion that is disposed along the first direction and has a second height that is lower than the first height, the second portion contacting the first portion, and the second height. A resin protrusion including a third portion having a third height lower than the third portion and in contact with the second portion; an electrical connection portion disposed in the first portion; and the electrode. A step of preparing a semiconductor device having a wiring to be electrically connected;
While causing the adhesive material disposed between the semiconductor device and the wiring board to flow, the semiconductor device and the wiring board are brought close to each other, and the electrical connection portion and the wiring pattern are brought into contact with each other electrically. Connecting, and
Curing the adhesive material to form an adhesive that bonds the semiconductor device and the wiring board;
Including
In the step of bringing the semiconductor device and the wiring board close together,
An electronic device for bringing the semiconductor device and the wiring board close to each other so that the second part of the resin protrusion is in contact with the wiring board and the third part is not in contact with the wiring board. Production method.

Images