JP2008159993A5 - - Google Patents
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- JP2008159993A5 JP2008159993A5 JP2006349364A JP2006349364A JP2008159993A5 JP 2008159993 A5 JP2008159993 A5 JP 2008159993A5 JP 2006349364 A JP2006349364 A JP 2006349364A JP 2006349364 A JP2006349364 A JP 2006349364A JP 2008159993 A5 JP2008159993 A5 JP 2008159993A5
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- JP
- Japan
- Prior art keywords
- semiconductor device
- height
- length
- along
- wiring board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims 23
- 239000011347 resin Substances 0.000 claims 4
- 229920005989 resin Polymers 0.000 claims 4
- 230000001070 adhesive Effects 0.000 claims 3
- 239000000853 adhesive Substances 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 3
- 239000000463 material Substances 0.000 claims 2
Claims (8)
前記半導体チップにおける前記電極が形成された面に形成された、第１の高さを有する第１の部分と、前記第１の部分の前記第１の高さよりも高さが低い第２の高さを有する第２の部分と、を含む樹脂突起と、
前記第１の部分に配置された電気的接続部と、
前記第１の部分に配置された前記電気的接続部と、前記電極と、を電気的に接続する配線と、
を有し、
前記第１の部分と、前記第２の部分とが、一方向に沿って配置され、
前記第１の部分と前記第２の部分とが一方向に沿って配置された方向と、直交する方向の、前記半導体チップの前記面における前記第２の部分の長さは、前記第１の部分と前記第２の部分とが一方向に沿って配置された方向と、直交する方向の、前記半導体チップの前記面における前記第１の部分の長さよりも短いことを特徴とする、半導体装置。 A semiconductor chip on which electrodes are formed;
Wherein the electrode of the semiconductor chip is formed on the formed face, first a first portion having a height, before Symbol second first part is lower in height than said first height A resin protrusion including a second portion having a height of
An electrical connection disposed in the first portion;
Said first part worth to disposed the said electrical connections, the wiring for electrically connecting, said electrode,
Have
The first part and the second part are arranged along one direction,
The length of the second portion in the surface of the semiconductor chip in the direction orthogonal to the direction in which the first portion and the second portion are arranged along one direction is the first portion. A semiconductor device characterized in that a length of the first portion in the surface of the semiconductor chip in a direction orthogonal to a direction in which the portion and the second portion are arranged along one direction is shorter .
前記第１の部分を前記第１の部分と前記第２の部分とが一方向に沿って配置された方向と直交する面で切断した断面と、前記第２の部分を前記第１の部分と前記第２の部分とが一方向に沿って配置された方向と直交する面で切断した断面とは相似形である半導体装置。 The semiconductor device according to claim 1,
A cross-section of the first portion and the first portion and the second portion taken along a plane you perpendicular to the direction that is disposed along one direction, said second portion first portion a semiconductor device which is similar figure to the cross section and the second portion taken along a plane you perpendicular to the direction that is disposed along one direction.
前記樹脂突起は、
前記第２の部分の側方に配置された、前記第２の部分の前記第２の高さよりも高さが低い第３の高さを有する第３の部分をさらに含む半導体装置。 The semiconductor device according to claim 1 or 2,
The resin protrusion is
A semiconductor device further comprising a third portion disposed at a side of the second portion and having a third height that is lower than the second height of the second portion.
前記第３の部分の底面の長さは、前記第２の部分の底面の長さよりも短い半導体装置。 The semiconductor device according to claim 3.
The length of the bottom surface of the third portion is a semiconductor device shorter than the length of the bottom surface of the second portion.
前記第２の部分を前記第１の部分と前記第２の部分とが一方向に沿って配置された方向と直交する平面で切断した断面と、前記第３の部分を前記第１の部分と前記第２の部分とが一方向に沿って配置された方向と直交する平面で切断した断面とは相似形である半導体装置。 The semiconductor device according to claim 4.
A cross-section obtained by cutting the second portion along a plane orthogonal to the direction in which the first portion and the second portion are arranged along one direction, and the third portion as the first portion. A semiconductor device having a similar shape to a cross section cut along a plane orthogonal to a direction in which the second portion is disposed along one direction .
前記第１の部分の上面は、凸曲面である半導体装置。 The semiconductor device according to any one of claims 1 to 5,
A semiconductor device in which an upper surface of the first portion is a convex curved surface.
電極が形成された半導体チップと、前記半導体チップにおける前記電極が形成された面において、一方向に沿って配列され、第１の高さを有する、複数の第１の部分と、前記第１の部分の側方において、前記一方向に沿って配置され、前記第１の部分よりも高さが低い第２の高さを有する、第２の部分と、前記第２の部分の側方おいて、前記一方向に沿って配置され、前記第２の部分よりも高さが低い第３の高さを有する第３の部分とを含む樹脂突起と、前記第１の部分上に配置された電気的接続部を有する前記電極と電気的に接続された配線と、を有する半導体装置を用意する工程と、
前記半導体装置と前記配線基板との間に配置された接着材料を流動させながら前記半導体装置と前記配線基板とを近接させて、前記電気的接続部と前記配線パターンとを接触させて電気的に接続する工程と、
前記接着材料を硬化させて、前記半導体装置と前記配線基板とを接着する接着剤を形成する工程と、
を含み、
前記半導体装置と前記配線基板とを近接させる工程では、
前記樹脂突起の前記第２の部分が前記配線基板に接触するように、かつ、前記第３の部分が前記配線基板に接触しないように、前記半導体装置と前記配線基板とを近接させる電子デバイスの製造方法。 Preparing a wiring board having a base board and a wiring pattern formed on the base board;
A semiconductor chip on which electrodes are formed, and the Oite the surface on which the electrodes are formed in the semiconductor chip, are arranged along one direction, having a first height, a plurality of first portions, the first Oite on the side of the first portion, disposed along said one direction, have a height lower second height than the first portion, a second portion, said second portion lateral Oite, disposed along said one direction, the resin protrusion and a third portion having a height lower third height than the second portion, on the first portion before Symbol electrode and electrically connected to the wiring that having a arranged electrical connections, providing a semiconductor device having,
While causing the adhesive material disposed between the semiconductor device and the wiring board to flow, the semiconductor device and the wiring board are brought close to each other to bring the electrical connection portion and the wiring pattern into contact with each other electrically. Connecting, and
Curing the adhesive material to form an adhesive that bonds the semiconductor device and the wiring board;
Including
In the step of bringing the semiconductor device and the wiring board close together,
An electronic device for bringing the semiconductor device and the wiring board close to each other so that the second part of the resin protrusion is in contact with the wiring board and the third part is not in contact with the wiring board. Production method.
前記第２の部分の底面における前記第１の部分と前記第２の部分とが一方向に沿って配置された方向と直交する方向の長さは、前記第１の部分の底面における前記第１の部分と前記第２の部分とが一方向に沿って配置された方向と直交する方向の長さよりも短く、
前記第３の部分の底面における前記第１の部分と前記第２の部分とが一方向に沿って配置された方向と直交する方向の長さは、前記第２の部分の底面における前記第１の部分と前記第２の部分とが一方向に沿って配置された方向と直交する方向の長さよりも短い電子デバイスの製造方法。 In the manufacturing method of the electronic device of Claim 7,
The length in the direction orthogonal to the direction in which the first part and the second part are arranged along one direction on the bottom surface of the second part is the first length on the bottom surface of the first part. shorter than the portion and the direction of the length of the second portion and is orthogonal to the direction that is disposed along one direction,
The length in the direction orthogonal to the direction in which the first portion and the second portion are arranged along one direction on the bottom surface of the third portion is the first length on the bottom surface of the second portion . A method of manufacturing an electronic device that is shorter than a length in a direction orthogonal to a direction in which the portion and the second portion are arranged along one direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006349364A JP4858161B2 (en) | 2006-12-26 | 2006-12-26 | Semiconductor device and method for manufacturing electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006349364A JP4858161B2 (en) | 2006-12-26 | 2006-12-26 | Semiconductor device and method for manufacturing electronic device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008159993A JP2008159993A (en) | 2008-07-10 |
| JP2008159993A5 true JP2008159993A5 (en) | 2010-02-18 |
| JP4858161B2 JP4858161B2 (en) | 2012-01-18 |
Family
ID=39660553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006349364A Expired - Fee Related JP4858161B2 (en) | 2006-12-26 | 2006-12-26 | Semiconductor device and method for manufacturing electronic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4858161B2 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3998014B2 (en) * | 2004-09-29 | 2007-10-24 | セイコーエプソン株式会社 | Semiconductor device, mounting structure, electro-optical device, method of manufacturing electro-optical device, and electronic apparatus |
| JP4635676B2 (en) * | 2005-03-25 | 2011-02-23 | セイコーエプソン株式会社 | Manufacturing method of semiconductor device |
-
2006
- 2006-12-26 JP JP2006349364A patent/JP4858161B2/en not_active Expired - Fee Related
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