JP4888650B2 - Semiconductor device and method for manufacturing electronic device - Google Patents

Description

  The present invention relates to a semiconductor device, an electronic device, and a method for manufacturing an electronic device.

  In order to reduce the size of the electronic device, the outer shape of the semiconductor device is preferably small. However, as the roles of semiconductor devices have diversified, the integration of integrated circuits formed on semiconductor chips has progressed, and accordingly, the number of pins of semiconductor chips has increased. That is, at present, development of a semiconductor device capable of simultaneously satisfying the demands of miniaturization of a semiconductor device, high integration of an integrated circuit, and an increase in electrodes is in progress.

As a semiconductor device that can meet this demand, a semiconductor device of a type in which wiring is formed on a semiconductor chip has attracted attention. In this type of semiconductor device, the outer shape of the semiconductor device can be made substantially the same as the outer shape of the semiconductor chip, so that the semiconductor device can be reduced in size.
JP-A-2-272737

  If a semiconductor device is miniaturized and highly integrated, it becomes difficult to mount it on a wiring board or the like. However, in order to ensure the reliability of the electronic device, it is important to maintain the reliability of the semiconductor device even after mounting.

  An object of the present invention is to provide a semiconductor device capable of efficiently manufacturing a highly reliable electronic device, a highly reliable electronic device, and a method for efficiently manufacturing a highly reliable electronic device. There is.

(1) A semiconductor device according to the present invention includes:
A semiconductor chip on which an integrated circuit is formed, the electrode having an electrode, and the outer surface of the surface on which the electrode is formed has a rectangular shape;
A first resin protrusion having a plurality of first protrusions disposed in a region near the first side of the surface;
A second resin protrusion having a plurality of second protrusions disposed in a region in the vicinity of the second side facing the first side of the surface;
A wiring electrically connected to the electrode, having an electrical connection formed on the first and second protrusions;
A resin member disposed in the vicinity of the second side;
Including
The number of the first protrusions is larger than that of the second protrusions.

  According to the present invention, the resin member is formed in a region near the second side of the semiconductor chip. Therefore, when the semiconductor device is mounted on a wiring board or the like, the second convex portion can be prevented from being greatly deformed as compared with the first convex portion.

  That is, according to the present invention, it is possible to provide a semiconductor device capable of easily manufacturing a highly reliable electronic device in which the first and second convex portions are uniformly crushed.

(2) In this semiconductor device,
The resin member may have a height different from that of the second convex portion.

  According to this, the flow direction of the resin material can be regulated in the process of mounting the semiconductor device on the wiring board.

(3) A semiconductor device according to the present invention includes:
A semiconductor chip on which an integrated circuit is formed, the electrode having an electrode, and the outer surface of the surface on which the electrode is formed has a rectangular shape;
A plurality of first resin protrusions disposed in a region near the first side of the surface;
A plurality of second resin protrusions arranged in the vicinity of the second side opposite to the first side of the surface, the number of the second resin protrusions being smaller than the first resin protrusions;
A wiring electrically connected to the electrode, having an electrical connection formed on the first and second resin protrusions;
A resin member disposed in the vicinity of the second side;
including.

  According to the present invention, the resin member is formed in a region near the second side of the semiconductor chip. Therefore, when the semiconductor device is mounted on a wiring board or the like, the second resin protrusion can be prevented from being greatly deformed as compared with the first resin protrusion.

  That is, according to the present invention, it is possible to provide a semiconductor device capable of easily manufacturing a highly reliable electronic device in which the first and second resin protrusions are uniformly crushed.

(4) In this semiconductor device,
The resin member may have a height different from that of the second resin protrusion.

  According to this, the flow direction of the resin material can be regulated in the process of mounting the semiconductor device on the wiring board.

(5) In this semiconductor device,
The resin member may have a bottom shape different from that of the second resin protrusion.

(6) In this semiconductor device,
A metal layer covering the resin member may be further included.

(7) In this semiconductor device,
The metal layer may be configured with the same composition as the wiring.

(8) In this semiconductor device,
A metal layer may not be formed on the resin member.

(9) In this semiconductor device,
The first and second resin protrusions may be arranged so as not to overlap with the integrated circuit.

  Thereby, it is possible to prevent the circuit characteristics of the integrated circuit from changing in the process of mounting the semiconductor device on the wiring board.

(10) In this semiconductor device,
The resin member may be arranged so as not to overlap with the integrated circuit.

  Thereby, it is possible to prevent the circuit characteristics of the integrated circuit from changing in the process of mounting the semiconductor device on the wiring board.

(11) In this semiconductor device,
The outer shape of the surface is rectangular,
The first and second sides may be long sides of the rectangle.

(12) In this semiconductor device,
The first and second resin protrusions and the resin member may be made of the same material.

(13) In this semiconductor device,
The resin member may be disposed in a region near a corner of the surface.

(14) An electronic device according to the present invention includes:
A wiring board having a base substrate and a wiring pattern;
A semiconductor chip on which an integrated circuit is formed, and a plurality of first protrusions disposed in a region in the vicinity of the first side of the surface; A first resin protrusion having a portion, a second resin protrusion having a plurality of second protrusions disposed in a region in the vicinity of the second side facing the first side of the surface, A wiring electrically connected to the electrode having an electrical connection formed on the first and second protrusions, and a projecting member disposed in a region near the second side; A semiconductor device mounted on the wiring board so that the electrical connection portion is in contact with the wiring pattern;
An adhesive for bonding the wiring board and the semiconductor device;
Including
The first convex portion has a larger number than the second convex portion,
The protruding member is configured to include a resin member,
The first and second convex portions and the resin member are crushed and elastically deformed by the semiconductor chip and the wiring board.

  According to the present invention, the resin member is formed in a region near the second side of the semiconductor chip. Therefore, the difference in elastic force can be reduced between the vicinity region of the first side and the vicinity region of the second side of the semiconductor chip. Therefore, it is possible to provide a highly reliable electronic device that can prevent non-uniform stress from being generated inside.

(15) An electronic device according to the present invention includes:
A wiring board having a base substrate and a wiring pattern;
A semiconductor chip on which an integrated circuit is formed, the electrode having an electrode and the outer surface of the surface on which the electrode is formed has a rectangular shape; and a plurality of first resin protrusions disposed in a region near the first side of the surface A plurality of second resin protrusions arranged in the vicinity of the second side opposite to the first side of the surface, the number of the second resin protrusions being smaller than the number of the first resin protrusions, A semiconductor device comprising: a wiring electrically connected to the electrode, and a protruding member disposed in a vicinity region of the second side, having an electrical connection portion formed on the second resin protrusion;
An adhesive for bonding the wiring board and the semiconductor device;
Including
The protruding member is configured to include a resin member,
The first and second resin protrusions and the resin member are crushed and elastically deformed by the semiconductor chip and the wiring board.

  According to the present invention, the resin member is formed in a region near the second side of the semiconductor chip. Therefore, the difference in elastic force can be reduced between the vicinity region of the first side and the vicinity region of the second side of the semiconductor chip. Therefore, it is possible to provide a highly reliable electronic device that can prevent non-uniform stress from being generated inside.

(16) A method for manufacturing an electronic device according to the present invention includes:
Preparing a wiring board having a base substrate and a wiring pattern;
A semiconductor chip on which an integrated circuit is formed, and a plurality of first protrusions disposed in a region in the vicinity of the first side of the surface; A first resin protrusion having a portion, a second resin protrusion having a plurality of second protrusions disposed in a region in the vicinity of the second side facing the first side of the surface, A wiring having electrical connection portions formed on the first and second convex portions and electrically connected to the electrode; and a projecting member disposed in a region near the second side. A step of preparing a semiconductor device;
Mounting the semiconductor device on the wiring board and bringing the wiring pattern and the electrical connection portion into contact with each other for electrical connection;
Forming an adhesive for bonding the wiring board and the semiconductor device;
Including
The first convex portion has a larger number than the second convex portion,
The protruding member is configured to include a resin member,
In the step of mounting the semiconductor device on the wiring board, the first and second protrusions and the resin member are elastically deformed by the semiconductor chip and the wiring board.

  In the present invention, the resin member is formed in the vicinity of the second side of the semiconductor chip. In the step of mounting the semiconductor device on the wiring board, the resin member is elastically deformed by the semiconductor chip and the wiring board. Therefore, in the process of mounting the semiconductor device on the wiring board or the like, the deformation amount of the second convex portion can be regulated by the resin member, so that the second convex portion is greatly deformed compared to the first convex portion. This can be prevented.

  That is, according to the present invention, it is possible to easily manufacture a highly reliable electronic device in which the first and second convex portions are uniformly elastically deformed.

(17) An electronic device manufacturing method according to the present invention includes:
Preparing a wiring board having a base substrate and a wiring pattern;
A semiconductor chip on which an integrated circuit is formed, the electrode having an electrode and the outer surface of the surface on which the electrode is formed has a rectangular shape; and a plurality of first resin protrusions disposed in a region near the first side of the surface A plurality of second resin protrusions arranged in the vicinity of the second side opposite to the first side of the surface, the number of the second resin protrusions being smaller than the number of the first resin protrusions, A semiconductor device is provided that includes an electrical connection portion formed on two resin protrusions and includes a wiring electrically connected to the electrode and a protrusion member disposed in the vicinity of the second side. And a process of
Mounting the semiconductor device on the wiring board and bringing the wiring pattern and the electrical connection portion into contact with each other for electrical connection;
Forming an adhesive for bonding the wiring board and the semiconductor device;
Including
The protruding member is configured to include a resin member,
In the step of mounting the semiconductor device on the wiring board, the first and second resin protrusions and the resin member are elastically deformed by the semiconductor chip and the wiring board.

  In the present invention, the resin member is formed in the vicinity of the second side of the semiconductor chip. In the step of mounting the semiconductor device on the wiring board, the resin member is elastically deformed by the semiconductor chip and the wiring board. Therefore, since the deformation amount of the second resin protrusion can be regulated by the resin member in the process of mounting the semiconductor device on the wiring board or the like, the second resin protrusion is largely deformed compared to the first resin protrusion. This can be prevented.

  That is, according to the present invention, it is possible to easily manufacture a highly reliable electronic device in which the first and second resin protrusions are elastically deformed uniformly.

  Embodiments to which the present invention is applied will be described below with reference to the drawings. However, the present invention is not limited to the following embodiments. Moreover, this invention shall include what combined the following content freely.

(First embodiment)
1. Semiconductor Device Hereinafter, a semiconductor device 1 according to a first embodiment to which the present invention is applied will be described. FIGS. 1A to 5C are diagrams for describing the structure of the semiconductor device according to this embodiment and the method for manufacturing the semiconductor device.

(1) Configuration of Semiconductor Device The configuration of the semiconductor device 1 according to the embodiment to which the present invention is applied will be described below. FIG. 1A to FIG. 1C are diagrams for describing the configuration of the semiconductor device 1. Here, FIG. 1A is a top view of the semiconductor device 1. 1B is a partially enlarged view of a cross section taken along line IB-IB of FIG. 1A, and FIG. 1C is a partially enlarged view of a cross section taken along line IC-IC of FIG. is there.

  As shown in FIGS. 1A to 1C, the semiconductor device according to the present embodiment includes a semiconductor chip 10 on which a plurality of electrodes 12 are formed. The semiconductor chip 10 may be a silicon chip, for example. In the present embodiment, the outer shape of the surface 15 on which the electrode 12 is formed in the semiconductor chip 10 is a rectangle (rectangle or square). However, the present invention is not limited to this, and the following configuration may be extended to a semiconductor wafer (see FIG. 2A). An integrated circuit 14 may be formed on the semiconductor chip 10 (see FIG. 1B). The configuration of the integrated circuit 14 is not particularly limited. For example, the integrated circuit 14 may include an active element such as a transistor and a passive element such as a resistor, a coil, and a capacitor.

  As shown in FIGS. 1A and 1B, an electrode 12 is formed on the semiconductor chip 10. The electrode 12 may be electrically connected to the inside of the semiconductor chip 10. The electrode 12 may be electrically connected to the integrated circuit 14. Alternatively, a conductor (conductive pad) that is not electrically connected to the integrated circuit 14 may be referred to as the electrode 12. The electrode 12 may be a part of the internal wiring of the semiconductor substrate. At this time, the electrode 12 may be a portion used for electrical connection with the outside of the internal wiring of the semiconductor substrate. The electrode 12 may be formed of a metal such as aluminum or copper.

  In the present embodiment, the electrode 12 may be disposed only in the vicinity of the long side of the surface 15 (first and second long sides 17 and 19). At this time, the number of the electrodes 12 arranged in the region near the first long side 17 of the surface 15 may be larger than the number of the electrodes 12 arranged in the region near the second long side 19. . In other words, of the two long sides of the surface 15, the one with the larger number of electrodes 12 arranged in the vicinity region is the first long side 17, and the one with the smaller number of electrodes 12 is the second long side 19. You may call it. However, the present invention is not limited to this, and the electrode 12 may be disposed at any position on the surface 15.

  In the present embodiment, the vicinity region of the first long side 17 and the vicinity region of the second long side 19 are the surface 15 and the long side (first and second long sides 17 and 19, respectively). ) And a region on the first long side 17 side and a region on the second long side 19 side when equally divided into two by a straight line parallel to). Alternatively, the vicinity region of the first long side 17 may refer to a region between the first long side 17 and the formation region of the integrated circuit 14. Further, the region near the second long side 19 may refer to a region between the second long side 19 and the formation region of the integrated circuit 14. The first and second long sides 17 and 19 are a pair of opposite sides of the surface 15.

The semiconductor chip 10 may have a passivation film 16 as shown in FIGS. 1B and 1C. The passivation film 16 is formed so as to expose the electrode 12. The passivation film 16 may be formed so as to partially cover the electrode 12. The passivation film 16 may be formed so as to cover the periphery of the electrode 12 as shown in FIG. The passivation film may be, for example, an inorganic insulating film such as SiO ₂ or SiN. Alternatively, the passivation film 16 may be an organic insulating film such as a polyimide resin.

  The semiconductor device according to the present embodiment includes a plurality of resin protrusions 20 as shown in FIGS. The resin protrusion 20 is formed on the surface 15 of the semiconductor chip 10. The resin protrusion 20 may be formed on the passivation film 16 as shown in FIGS. 1 (B) and 1 (C). The resin protrusion 20 may be disposed so as to avoid a region overlapping with the integrated circuit 14 in plan view. In particular, the resin protrusion 20 may be disposed so as not to overlap with an active element (such as a transistor) of the integrated circuit 14.

  The shape of the resin protrusion 20 is not particularly limited. When the outer shape of the surface 15 is rectangular, the resin protrusion 20 may have a shape extending in parallel with any side of the surface 15. For example, when the outer shape of the surface 15 is a rectangle, the resin protrusion 20 may have a shape extending along the long side of the rectangle. And the resin protrusion 20 may be arrange | positioned in the peripheral area | region of the long side of a rectangle.

  In the present embodiment, the resin protrusion 20 extends along the first long side 17, the first resin protrusion 22 disposed in the vicinity of the first long side 17, and the second long side 19. And a second resin protrusion 24 arranged in the vicinity of the second long side 19 extending along the second long side 19. The first and second long sides 17 and 19 are a pair of opposite sides of the surface 15. In the present embodiment, the semiconductor device may have the first and second resin protrusions 22 and 24 one by one. However, the semiconductor device may have a plurality of first and second resin protrusions 22 and 24 (not shown).

  In the present embodiment, the first and second resin protrusions 22 and 24 have a plurality of first and second convex portions 26 and 28, respectively. Here, the first and second convex portions 26 and 28 are portions of the first and second resin protrusions 22 and 24 where an electrical connection portion 32 to be described later is disposed (the electrical connection portion 32 is referred to as the electrical connection portion 32). Supporting part). The first and second convex portions 26 and 28 may have the same cross section (the cross section when cut along a plane orthogonal to the first and second long sides 17 and 19). That is, the cross sections of the first and second convex portions 26 and 28 may have the same base and height. In the present embodiment, as shown in FIG. 1C, the second resin protrusion 24 has a concave portion between adjacent second convex portions 28. Similarly, the first resin protrusion 22 has a concave portion between adjacent first convex portions 26 (see FIG. 1C). That is, the first and second protrusions 26 and 28 are protruding portions of the first and second resin protrusions 22 and 24.

  In the present embodiment, the first and second resin protrusions 22 and 24 are arranged in the vicinity of the first and second long sides 17 and 19 of the surface 15, respectively. The first protrusion 26 is a part of the first resin protrusion 22, and the second protrusion 28 is a part of the second resin protrusion 24. From this, the semiconductor device according to the present embodiment has a plurality of first protrusions 26 arranged in a region near the first long side 17 of the surface 15 and a region near the second long side 19. The plurality of second convex portions 28 are arranged.

  In the present embodiment, the number of the first protrusions 26 is larger than that of the second protrusions 28. That is, the number of convex portions arranged in the vicinity region of the first long side 17 of the surface 15 of the semiconductor chip 10 is larger than the number of convex portions arranged in the vicinity region of the second long side 19. Therefore, in the semiconductor device according to the present embodiment, the electrical connection portion 32 disposed in the vicinity region of the first long side 17 is the electrical connection portion 32 disposed in the vicinity region of the second long side 19. More than.

  The material of the resin protrusion 20 is not particularly limited, and any known material may be applied. For example, the resin protrusion 20 is made of polyimide resin, silicone-modified polyimide resin, epoxy resin, silicone-modified epoxy resin, acrylic resin, phenol resin, silicone resin, modified polyimide resin, benzocyclobutene (BCB), polybenzoxazole (PBO). Polybenzoxazole) or other resin.

  As shown in FIGS. 1A to 1C, the semiconductor device according to this embodiment includes a wiring 30. The wiring 30 is electrically connected to the electrode 12. The wiring 30 is formed so as to pass over the resin protrusion 20. The wiring 30 is formed so as to pass over the first and second convex portions 26 and 28 in the resin protrusion 20. The wiring 30 includes an electrical connection portion 32 disposed on the resin protrusion 20. That is, a region of the wiring 30 that is disposed on the resin protrusion 20 (the upper surface of the resin protrusion 20) may be referred to as an electrical connection portion 32. The electrical connection portion 32 is a portion of the wiring 30 that is used for electrical connection with a conductive portion (such as a wiring pattern on a wiring board) of another electronic component. In the semiconductor device according to the present embodiment, the electrical connection portion 32 is disposed on the first and second convex portions 26 and 28 of the resin protrusion 20.

  The material applicable to the wiring 30 is not particularly limited. The wiring 30 may be made of, for example, Au, TiW, Cu, Ni, Pd, Al, Cr, Ti, W, NiV, lead-free solder, or the like. Further, the structure of the wiring 30 is not particularly limited. For example, the wiring 30 may be formed of a plurality of layers. At this time, the wiring 30 may include a first layer made of titanium tungsten and a second layer (outermost layer) made of gold (not shown). Alternatively, the wiring 30 may be formed of a single layer. The wiring 30 may be formed so as to be in contact with the passivation film 16. The wiring 30 may be formed so as to reach the passivation film 16 from the electrode 12 over the resin protrusion 20. That is, the wiring 30 may be formed on both sides of the resin protrusion 20 so as to be in contact with the passivation film 16 (surface 15).

  The semiconductor device according to the present embodiment includes a resin member 40. The resin member 40 is disposed in the vicinity region of the second long side 19. The resin member 40 may be provided only in the vicinity region of the second long side 19 while avoiding the vicinity region of the first long side 17. The resin member 40 may be arranged so as to avoid a region overlapping the integrated circuit 14 (particularly, an active element such as a transistor) on the surface 15. The resin member 40 may be disposed in the vicinity of the corner of the surface 15 in the vicinity region of the second long side 19. The resin member 40 may be disposed between the second resin protrusion 24 and the short side of the surface 15. In the present embodiment, as shown in FIG. 1A, two resin members 40 may be disposed on both sides of the second resin protrusion 24, respectively. However, the semiconductor device according to the present invention is not limited to this. The semiconductor device may have two or more resin members 40, or may have only one resin member 40.

  In the present embodiment, as shown in FIG. 1C, the height of the resin member 40 may be higher than the height of the resin protrusion 20 (the first and second protrusions 26 and 28). . At this time, the bottom surface (surface facing the surface 15) of the resin member 40 may be wider than the bottom surface of the resin protrusion 20. The height of the resin protrusion 20 and the resin member 40 may be the size of the resin protrusion 20 and the resin member 40 in the thickness direction of the semiconductor chip 10 (direction orthogonal to the surface 15). The height of the resin protrusion 20 may be the height of the resin protrusion 20 from the surface 15 (passivation film 16). Further, the height of the resin member 40 may be the height of the resin member 40 from the surface 15. However, in the semiconductor device according to the present embodiment, the resin member 40 may be lower in height than the resin protrusion 20.

  The material of the resin member 40 is not particularly limited, but any known material may be used. The resin member 40 may be made of the same material as the resin protrusion 20. Alternatively, the resin member 40 may be made of a material harder than the resin protrusion 20. For example, the resin protrusion 20 may be made of phenol resin, and the resin member 40 may be made of polyimide resin or acrylic resin.

  The semiconductor device according to the present embodiment may further include a metal layer 42 that covers the resin member 40. The metal layer 42 may be formed so as to cover the entire surface of the resin member 40. Alternatively, the metal layer 42 may be formed so as to cover only the upper surface of the resin member 40 while avoiding the side surface of the resin member 40. The configuration of the metal layer 42 is not particularly limited, but the metal layer 42 may be configured with the same composition as the wiring 30. The metal layer 42 may be a conductor that is not electrically connected to the inside of the semiconductor chip 10 (the integrated circuit 14). However, the metal layer 42 may be electrically connected to the integrated circuit 14. For example, the metal layer 42 may be electrically connected to a power supply layer or a ground layer of the semiconductor device. Or the semiconductor device which concerns on this Embodiment may be the structure which does not have the metal layer which covers the resin member 40 (not shown).

  In the present embodiment, the resin member 40 and the metal layer 42 may be collectively referred to as a protruding member 45. In the present embodiment, the protruding member 45 may be higher than the first and second convex portions 26 and 28.

  The semiconductor device 1 according to the present embodiment may have the above configuration. Note that the operational effects of the semiconductor device 1 will be described later.

(2) Manufacturing Method of Semiconductor Device Hereinafter, a manufacturing method of the semiconductor device 1 according to the present embodiment will be described. 2A to 5C are views for explaining a method for manufacturing the semiconductor device 1.

  The method for manufacturing a semiconductor device according to the present embodiment includes preparing a semiconductor substrate 11 shown in FIGS. 2 (A) to 2 (C). Here, FIG. 2A is a schematic view of the semiconductor substrate 11, and FIG. 2B is a top view of the semiconductor substrate 11 and shows a region 100. FIG. 2C is a cross-sectional view taken along the line IIC-IIC in FIG.

  As shown in FIG. 2A, the semiconductor substrate 11 has a wafer shape. The wafer-like semiconductor substrate 11 has a region 100 to be a plurality of semiconductor chips 10. However, a semiconductor chip (see FIG. 1A) may be prepared as a semiconductor substrate and the following steps may be performed. As shown in FIGS. 2B and 2C, an electrode 12 is formed on the semiconductor substrate 11. The semiconductor substrate 11 may have a passivation film 16.

  The method for manufacturing a semiconductor device according to the present embodiment includes forming a resin protrusion 20 and a resin member 40 on a semiconductor substrate 11 as shown in FIGS. 3 (A) to 4 (C). Hereinafter, the process of forming the resin protrusion 20 and the resin member 40 will be described.

  First, as shown in FIGS. 3A to 3C, a resin material 25 is provided on the semiconductor substrate 11. The resin material 25 is disposed in a region of the semiconductor substrate 11 where the resin protrusion 20 and the resin member 40 are formed. The method for providing the resin material 25 is not particularly limited. For example, the resin material 25 may be formed by providing a resin material on the entire surface of the semiconductor substrate 11 and then patterning the resin material. The resin material 25 may be a thermosetting material that is cured by heating, for example.

  In the present embodiment, the resin material 25 may be provided such that the bottom surface of the region to be the resin member 40 is wider than the bottom surface of the region to be the resin protrusion 20. Specifically, the resin material 25 may be provided such that the short side W2 of the bottom surface of the region serving as the resin member 40 is longer than the short side W1 of the bottom surface of the region serving as the resin protrusion 20.

  And the resin material 25 is hardened, and the resin protrusion 20 and the resin member 40 are formed as shown in FIGS. 4 (A) to 4 (C). By adjusting the melting conditions and curing conditions of the resin material 25, the shapes of the resin protrusions 20 and the resin member 40 (the shape of the upper surface) can be controlled. For example, the resin material 25 is heated so that only the surface is melted and the center is not melted (to a semi-molten state) and then cured, so that the upper surface becomes a convex curved surface as shown in FIG. Thus, the resin protrusion 20 and the resin member 40 can be formed.

  Further, the resin material 25 is patterned so that the short side W2 of the bottom surface of the region to be the resin member 40 is wider than the short side W1 of the bottom surface of the region to be the resin protrusion 20, as shown in FIG. As described above, the resin member 40 can be formed to be higher than the resin protrusion 20.

  In the present embodiment, the method of forming the resin protrusion 20 and the resin member 40 in a lump has been described, but the present invention is not limited to this. That is, the resin protrusion 20 and the resin member 40 may be formed in separate steps. In addition, the resin protrusion 20 (first and second resin protrusions 22 and 24) and the resin member 40 may be formed of the same material or different materials.

  The method for manufacturing a semiconductor device according to the present embodiment includes forming a wiring 30 and a metal layer 42 as shown in FIGS. 5 (A) to 5 (C). The process of forming the wiring 30 and the metal layer 42 is not particularly limited, and any known method may be applied. For example, the wiring 30 and the metal layer 42 may be formed by forming a metal layer on the semiconductor substrate 11 and patterning the metal layer. Alternatively, the wiring 30 may be formed by applying an inkjet method or a plating method. The wiring 30 and the metal layer 42 may be formed simultaneously, but may be formed in separate steps.

  The manufacturing method of the semiconductor device according to the present embodiment may further include a step of partially removing the exposed region from the wiring 30 in the resin protrusion 20. Thereby, a recessed part is formed in the resin protrusion 20, and the resin protrusion 20 can be formed into a shape having protrusions (first and second protrusions 26, 28) (FIG. 1A to FIG. 1). C)). In addition, when the resin member 40 is covered with the metal layer 42, it can prevent that the resin member 40 is etched by this process. Thereby, the height of the resin member 40 is maintained, and the protruding member 45 can be formed in a shape (height) as designed.

  Then, the semiconductor device 1 shown in FIGS. 1A to 1C can be manufactured through a process of cutting the semiconductor substrate 11 and an inspection process.

2. Electronic Device Hereinafter, an electronic device 2 according to an embodiment to which the present invention is applied will be described. FIG. 6A to FIG. 11 are diagrams for explaining the electronic device 2 according to the embodiment to which the present invention is applied.

(1) Manufacturing Method of Electronic Device Hereinafter, a manufacturing method of the electronic device 2 according to the embodiment to which the present invention is applied will be described. FIGS. 6A to 8B are views for explaining a method for manufacturing an electronic device according to an embodiment to which the present invention is applied.

  The electronic device manufacturing method according to the present embodiment includes preparing the semiconductor device 1. The semiconductor device 1 has one of the configurations described above.

  The method for manufacturing an electronic device according to the present embodiment includes preparing a wiring board 50. Hereinafter, the configuration of the wiring board 50 will be described.

  The wiring substrate 50 includes a base substrate 52 and a wiring pattern 54. The base substrate 52 (wiring substrate 50) may be a part of an electro-optical panel (liquid crystal panel, electroluminescence panel, etc.). At this time, the base substrate 52 may be, for example, a ceramic substrate or a glass substrate. The material of the wiring pattern 54 is not particularly limited. For example, the wiring pattern 54 is formed of a metal film such as ITO (Indium Tin Oxide), Cr, or Al, a metal compound film, or a composite film thereof. Also good. The wiring pattern 54 may be electrically connected to an electrode (scanning electrode, signal electrode, counter electrode, etc.) that drives the liquid crystal. However, the wiring substrate 50 may be a resin substrate.

  The electronic device manufacturing method according to the present embodiment includes mounting the semiconductor device 1 on the wiring board 50. In this step, the semiconductor device 1 is mounted on the wiring board 50, and the electrical connection portion 32 and the wiring pattern 54 are brought into contact and electrically connected. In this step, the protruding member 45 (metal layer 42) may be brought into contact with the wiring board 50. Hereinafter, with reference to FIGS. 6A to 8B, a process of mounting the semiconductor device 1 on the wiring board 50 (a method for manufacturing an electronic device) will be described.

  First, as shown in FIGS. 6A and 7A, the semiconductor device 1 and the wiring board 50 are arranged with a space therebetween, and the two are aligned. For example, the semiconductor device 1 is disposed above the wiring substrate 50 and aligned so that the electrical connection portion 32 (resin protrusion 20) of the semiconductor device 1 and the wiring pattern 54 of the wiring substrate 50 face each other.

  For example, the semiconductor device 1 may be held by a jig (bonding tool) (not shown), and the semiconductor device 1 and the wiring board 50 may be aligned. Note that a heater may be built in the jig, and thereby the semiconductor device 1 may be heated. By heating the semiconductor device 1, the electrical connection portion 32 is heated, and the electrical connection portion 32 and the wiring pattern 54 can be reliably electrically connected.

  Note that an adhesive material 72 may be provided in advance between the semiconductor device 1 and the wiring substrate 50. The adhesive material 72 may be provided in a paste form or a film form. The adhesive material 72 may be an insulating material (NCP, NCF) that does not contain conductive particles or the like. For example, the adhesive material 72 may be provided on the wiring board 50.

  Thereafter, the semiconductor device 1 and the wiring board 50 are brought close to each other. In the present embodiment, the height of the protrusion member 45 is higher than that of the resin protrusion 20 (first and second protrusions 26 and 28). Therefore, when the semiconductor device 1 and the wiring board 50 are brought close to each other, first, the protruding member 45 (metal layer 42) comes into contact with the wiring board 50 as shown in FIG. The protruding member 45 may be in contact with the base substrate 52 of the wiring substrate 50 or may be in contact with the wiring pattern 54.

  In the present embodiment, the semiconductor device 1 and the wiring board 50 are further brought closer together while the resin member 40 is elastically deformed. As a result, as shown in FIGS. 6C and 7B, the wiring 30 (electrical connection portion 32) and the wiring pattern 54 come into contact with each other.

  In the present embodiment, as shown in FIGS. 6D and 7C, the semiconductor device 1 and the wiring board 50 are brought closer to each other, and the resin protrusion 20 (first step) is formed by the semiconductor chip 10 and the wiring board 50. The first and second convex portions 26, 28) are crushed and elastically deformed. According to this, since the electrical connection portion 32 and the wiring pattern 54 can be pressed by the elastic force of the resin protrusion 20 (the first and second convex portions 26 and 28), the electrical connection reliability is high. Electronic devices can be manufactured.

  In this step, the semiconductor device 1 and the wiring substrate 50 are brought close to each other, and the concave portions (regions between the first and second convex portions 26 and 28) of the first and second resin protrusions 22 and 24 are formed on the wiring substrate. 50 may be contacted. In this step, the semiconductor device 1 and the wiring substrate 50 may be brought close to each other while the adhesive material 72 is caused to flow by the semiconductor device 1 and the wiring substrate 50. Thereby, the adhesive material 72 may be filled between the semiconductor device 1 (semiconductor chip 10) and the wiring substrate 50 (see FIGS. 6D and 7C).

  In the present embodiment, the semiconductor device 1 and the wiring substrate 50 may be tilted once in the process of mounting the semiconductor device 1 on the wiring substrate 50. For example, the semiconductor device 1 and the wiring board 50 may be tilted using the fact that the resin member 40 (projection member 45) is higher than the first and second convex portions 26 and 28.

  Specifically, when the semiconductor device 1 and the wiring board 50 are brought close to each other, the protruding member 45 comes into contact with the wiring board 50 (see FIG. 6B). Since the protruding member 45 is disposed in the vicinity of the second long side 19 of the semiconductor chip 10, when the protruding member 45 contacts the wiring substrate 50, the elastic force of the protruding member 45 causes the second long side 19 to be elastic. Is a force that restricts the proximity of the wiring board 50 to the wiring board 50. Therefore, when the semiconductor device 1 and the wiring board 50 are further pressed, the first long side 17 (only) can be brought close to the wiring board 50 as shown in FIG. The substrate 50 can be tilted.

  When the semiconductor device 1 and the wiring substrate 50 are further pressed, the first convex portion 26 comes into contact with the wiring substrate 50, and the elastic force of the first convex portion 26 causes the first long side 17 of the semiconductor chip 10. Is a force that restricts the proximity of the wiring board 50 to the wiring board 50. Therefore, by further pressing the semiconductor device 1 and the wiring board 50, the second long side 19 can be brought close to the wiring board 50, and as shown in FIG. 8B, the semiconductor device 1 and the wiring board. The semiconductor device 1 can be mounted on the wiring board 50 so that the line 50 is parallel to the line 50.

  By passing through this process, the flow direction of the adhesive material 72 can be regulated, so that the adhesive material 72 can be efficiently filled between the semiconductor device 1 and the wiring substrate 50.

  However, in the present invention, a process of mounting the semiconductor device 1 on the wiring board 50 may be performed so that the semiconductor device 1 and the wiring board 50 are always kept parallel (FIGS. 6A to 7D). reference).

  Then, an adhesive 70 is formed between the semiconductor device 1 and the wiring board 50 (see FIGS. 6E and 7D). The adhesive 70 may be formed by curing the adhesive material 72. The semiconductor device 1 and the wiring board 50 are bonded (fixed) with the adhesive 70. The space between the semiconductor chip 10 and the wiring substrate 50 may be maintained by the adhesive 70, and the resin protrusion 20 may be maintained in an elastically deformed state. Further, the resin member 40 may be kept elastically deformed by the adhesive 70. For example, by forming the adhesive 70 in a state where the resin protrusion 20 and the resin member 40 are elastically deformed, the state where the resin protrusion 20 and the resin member 40 are elastically deformed can be maintained.

  Through the above steps, the electronic device 2 may be manufactured as shown in FIGS. 6 (E) and 7 (D).

(2) Configuration of Electronic Device 2 The configuration of the electronic device 2 will be described below.

  The electronic device 2 includes a semiconductor device 1. The electronic device 2 also has a wiring board 50. According to the electronic device 2, the semiconductor device 1 is mounted on the wiring board 50. The semiconductor device 1 is mounted on the wiring board 50 so that the electrical connection portion 32 is in contact with the wiring pattern 54. The semiconductor device 1 is also mounted on the wiring board 50 so that the protruding member 45 (metal layer 42) is in contact with the wiring board 50. The electronic device 2 may include an adhesive 70 that bonds the semiconductor device 1 and the wiring substrate 50. In the electronic device 2, the resin protrusion 20 (first and second convex portions 26 and 28) and the resin member 40 are crushed by the semiconductor chip 10 and the wiring substrate 50 and elastically deformed.

  The electronic device 2 may be a display device (panel module). FIG. 9 shows a schematic diagram of the electronic device 2 as a display device. The display device may be, for example, a liquid crystal display device or an EL (Electrical Luminescence) display device. The semiconductor device 1 (semiconductor chip) may be a driver IC that controls the display device.

  10 and 11 show a notebook personal computer 1000 and a mobile phone 2000 as an example of an electronic apparatus having the electronic device 2.

3. Effect As described above, the semiconductor device 1 includes the plurality of first protrusions 26 and the plurality of second protrusions 28. When the semiconductor device 1 is mounted on the wiring board 50, the first and second convex portions 26 and 28 are pressed and elastically deformed by the semiconductor chip 10 and the wiring board 50. When the numbers of the first protrusions 26 and the second protrusions 28 are different, there is a difference in elastic force between the first protrusions 26 and the second protrusions 28. In the case where the semiconductor device 1 is not provided, in the step of mounting the semiconductor device 1 on the wiring substrate 50, the second convex portion 28 is deformed to be larger than the first convex portion 26, and the semiconductor device 1 is It is expected that there will be a situation where it is mounted at an angle.

  However, according to the semiconductor device 1, the electrical connection portion 32 and the wiring pattern are pressed by pressing the electrical connection portion 32 against the wiring pattern 54 by the elastic force of the resin protrusion 20 (the first and second convex portions 26 and 28). The electrical connection reliability with 54 is ensured. Therefore, in order to increase the reliability of the electronic device, it is preferable that all the electrical connection portions 32 are pressed against the wiring pattern 54 with a uniform force (elastic force). That is, in order to increase the reliability of the electronic device, it is important to mount the semiconductor device 1 on the wiring board 50 so that the semiconductor device 1 and the wiring board 50 are parallel to each other. Further, if the semiconductor device 1 and the wiring substrate 50 are parallel, it can be considered that all the resin protrusions 20 (the first and second protrusions 26 and 28) are uniformly deformed. Therefore, it is possible to prevent a large force from being applied to a part of the resin protrusion 20, and it is possible to prevent the resin protrusion 20 from being broken and the resin protrusion 20 from being plastically deformed. be able to.

  By the way, the semiconductor device 1 has the resin member 40 (projection member 45) arrange | positioned in the vicinity area | region of the 2nd edge | side (2nd long side 19). Therefore, the deformation of the second convex portion 28 can be restricted by the resin member 40, and the semiconductor device 1 can be prevented from being mounted inclined with respect to the wiring substrate 50. Therefore, according to the present invention, it is possible to provide a semiconductor device capable of efficiently manufacturing a highly reliable electronic device in which the semiconductor device and the wiring substrate are parallel.

  When the protruding member 45 (resin member 40) is arranged in a region that does not overlap with the integrated circuit 14, even if the semiconductor device 1 is pressed toward the wiring substrate 50, a large pressure is applied to the integrated circuit 14. Can be prevented. Therefore, the characteristics of the integrated circuit 14 can be maintained, and an electronic device with higher reliability can be manufactured.

  Further, when the height of the protruding member 45 (resin member 40) is higher than that of the resin protrusion 20 (first convex portion 26), the semiconductor device 1 and the wiring are connected in the step of mounting the semiconductor device 1 on the wiring substrate 50. The substrate 50 can be tilted (see FIG. 8A). Thereby, since the flow direction of the adhesive material 72 can be regulated, the adhesive material 72 can be efficiently and surely filled between the semiconductor device 1 and the wiring board 50. Therefore, the adhesive 70 can be formed so as not to have bubbles inside.

  Further, according to the present invention, the electronic device 2 is elastically deformed by the semiconductor chip 10 and the wiring substrate 50 crushed by the first and second convex portions 26 and 28 and the resin member 40. Therefore, even when the numbers of the first and second convex portions 26 and 28 are different, the elastic force in the region near the first long side 17 and the elastic force in the region near the second long side 19 are different. The difference can be reduced. Therefore, it is possible to provide a highly reliable electronic device that can prevent non-uniform stress from being generated inside.

4). Modifications The present invention is not limited to the above-described embodiments, and various modifications can be made. For example, the present invention includes configurations that are substantially the same as the configurations described in the embodiments (for example, configurations that have the same functions, methods, and results, or configurations that have the same objects and effects). In addition, the invention includes a configuration in which a non-essential part of the configuration described in the embodiment is replaced. In addition, the present invention includes a configuration that exhibits the same operational effects as the configuration described in the embodiment or a configuration that can achieve the same object. Further, the invention includes a configuration in which a known technique is added to the configuration described in the embodiment.

  Hereinafter, specific modifications of the embodiment to which the present invention is applied will be described.

(1) First Modification FIG. 12 is a diagram for explaining a configuration of a semiconductor device 3 according to a first modification of the embodiment to which the present invention is applied.

  The semiconductor device 3 has a resin member 60. As shown in FIG. 12, the resin member 60 is lower in height than the second convex portion 28. The height of the resin member 60 may be the same height as the recesses of the resin protrusions 20 (regions between the second protrusions 28). Further, the resin member 60 may not have a metal layer formed thereon. Also by this, since the same effect as the semiconductor device 1 can be obtained, a semiconductor device capable of efficiently manufacturing a highly reliable electronic device can be provided.

  Further, according to the semiconductor device 3, the semiconductor device 3 and the wiring substrate 50 can be tilted in the process of mounting the semiconductor device 3 on the wiring substrate 50. Specifically, in the semiconductor device 3, the number of the first protrusions 26 is larger than that of the second protrusions 28. Therefore, the elastic force of the first convex portion 26 is larger than the elastic force of the second convex portion 28, and the second long side 19 is closer to the wiring substrate 50 than the first long side 17. The device 3 can be tilted. When the semiconductor device 3 and the wiring board 50 are further pressed, the resin member 60 comes into contact with the wiring board 50, so that the elastic force on the second long side 19 side is increased. Thereby, the force that restricts the second long side 19 from approaching the wiring board 50 is increased, and the semiconductor device 3 can be mounted so as to be parallel to the wiring board 50. Therefore, the flow direction of the adhesive material 72 can be controlled in the process of mounting the semiconductor device 3 on the wiring board 50.

(2) Second Modification FIG. 13 is a diagram for explaining a configuration of a semiconductor device 4 according to a second modification of the embodiment to which the present invention is applied.

  The semiconductor device 4 has a resin member 62. As shown in FIG. 13, the resin member 62 is formed at the same height as the second convex portion 28. The upper surface of the resin member 62 is covered with a metal layer 64. In other words, the semiconductor device 4 includes the metal layer 64 that covers the resin member 62. Here, the metal layer 64 may be a so-called dummy wiring. That is, the metal layer 64 may be a conductor that is not electrically connected to the integrated circuit 14. Also by this, since the same effect as the semiconductor device 1 can be obtained, a semiconductor device capable of efficiently manufacturing a highly reliable electronic device can be provided.

(Second Embodiment)
Hereinafter, a second embodiment to which the present invention is applied will be described with reference to the drawings. 14A and 14B are diagrams for explaining the semiconductor device 5 according to the second embodiment to which the present invention is applied. 14A is a plan view of the semiconductor device 5, and FIG. 14B is a partially enlarged view of a cross section taken along line XIVB-XIVB in FIG. 14A.

  As shown in FIG. 14A, the semiconductor device according to the present embodiment includes a plurality of first resin protrusions 82 disposed in a region near the first long side 17 of the semiconductor chip 10, and a second A plurality of second resin protrusions 84 disposed in the vicinity of the long side 19. Note that the number of the first resin protrusions 82 is larger than that of the second resin protrusions 84. As shown in FIG. 14A, the first and second resin protrusions 82 and 84 may be circular in a plan view. The first and second resin protrusions 82 and 84 may be hemispherical. Note that the hemispherical shape mentioned here includes not only a strict hemispherical shape but also a similar shape.

  In the present embodiment, the electrical connection portion 32 is arranged on the first and second resin protrusions 82 and 84 as shown in FIGS. 14A and 14B. In the present embodiment, only one electrical connection portion 32 may be disposed on each of the first and second resin protrusions 82 and 84.

  As shown in FIGS. 14A and 14B, the semiconductor device according to the present embodiment includes a resin member 90. The resin member 90 is disposed in a region near the second side 19 of the surface 15. The resin member 90 may be formed to have a height different from that of the second resin protrusion 84 as shown in FIG. The height of the resin member 90 may be higher than that of the second resin protrusion 84. The bottom surface of the resin member 90 (the surface facing the semiconductor chip 10) may have a shape different from the shape of the bottom surface of the second resin protrusion 84 (first resin protrusion 82). The bottom surface of the resin member 90 and the bottom surface of the second resin protrusion 84 may have a similar shape. For example, the bottom surface of the resin member 90 may be a circle having a larger diameter than the bottom surface of the second resin protrusion 84 (see FIG. 14A). However, the resin member 90 may be the same height as the second resin protrusion 84 or may be lower than the second resin protrusion 84.

  Since this semiconductor device 5 can also achieve the same effect as described above, it is possible to provide a semiconductor device capable of efficiently manufacturing a highly reliable electronic device.

4A and 4B illustrate a semiconductor device according to a first embodiment. 10A and 10B illustrate a method for manufacturing a semiconductor device. 10A and 10B illustrate a method for manufacturing a semiconductor device. 10A and 10B illustrate a method for manufacturing a semiconductor device. 10A and 10B illustrate a method for manufacturing a semiconductor device. The figure for demonstrating the manufacturing method of an electronic device. The figure for demonstrating the manufacturing method of an electronic device. The figure for demonstrating the manufacturing method of an electronic device. The figure which shows the panel module as an example of an electronic device. FIG. 14 illustrates an example of an electronic device. FIG. 14 illustrates an example of an electronic device. 6A and 6B illustrate a semiconductor device according to a modified example. 6A and 6B illustrate a semiconductor device according to a modified example. FIG. 6 is a diagram for explaining a semiconductor device according to a second embodiment.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Semiconductor device, 2 ... Electronic device, 3 ... Semiconductor device, 4 ... Semiconductor device, 5 ... Semiconductor device, 10 ... Semiconductor chip, 11 ... Semiconductor substrate, 12 ... Electrode, 14 ... Integrated circuit, 15 ... Surface, 16 ... Passivation film, 17 ... first long side, 19 ... second long side, 20 ... resin projection, 22 ... first resin projection, 24 ... second resin projection, 25 ... resin material, 26 ... first Projection, 28 ... second projection, 30 ... wiring, 32 ... electric connection, 40 ... resin member, 42 ... metal layer, 45 ... projection member, 50 ... wiring substrate, 52 ... base substrate, 54 ... wiring Pattern, 60 ... resin member, 62 ... resin member, 64 ... metal layer, 70 ... adhesive, 72 ... adhesive material, 82 ... first resin projection, 84 ... second resin projection, 90 ... resin member, 100 ... region

Claims (13)

A semiconductor chip on which an integrated circuit is formed, the electrode having an electrode, and the outer surface of the surface on which the electrode is formed has a rectangular shape;
A first resin protrusion having a plurality of first protrusions disposed in a first region on the first side of the surface;
A second resin protrusion having a plurality of second protrusions disposed in a second region on the second side opposite to the first side of the first region of the surface ;
A wiring electrically connected to the electrode, having an electrical connection formed on the first and second protrusions;
A resin member disposed in the second area,
Including
The first convex portion, the second number than projections rather large,
The resin member is a semiconductor device higher than the second convex portion . A semiconductor chip on which an integrated circuit is formed, the electrode having an electrode, and the outer surface of the surface on which the electrode is formed has a rectangular shape;
A plurality of first resin protrusions disposed in a first region on the first side of the surface;
A plurality of second resin protrusions having a number smaller than that of the first resin protrusions, disposed in a second region on the second side facing the first side of the first region of the surface; ,
A wiring electrically connected to the electrode, having an electrical connection formed on the first and second resin protrusions;
A resin member disposed in the second area,
Only including,
The resin member is a semiconductor device higher than the second resin protrusion . The semiconductor device according to claim 2,
The resin member is a semiconductor device having a bottom shape different from that of the second resin protrusion. The semiconductor device according to any one of claims 1 to 3,
A semiconductor device further comprising a metal layer covering the resin member. The semiconductor device according to claim 4.
The semiconductor device, wherein the metal layer is configured with the same composition as the wiring. The semiconductor device according to any one of claims 1 to 3,
A semiconductor device in which a metal layer is not formed on the resin member. The semiconductor device according to any one of claims 1 to 6,
The semiconductor device in which the first and second resin protrusions are arranged so as not to overlap with the integrated circuit. The semiconductor device according to claim 1,
A semiconductor device in which the resin member is arranged so as not to overlap with the integrated circuit. The semiconductor device according to any one of claims 1 to 8,
The outer shape of the surface is rectangular,
The semiconductor device in which the first and second sides are long sides of the rectangle. The semiconductor device according to any one of claims 1 to 9,
The semiconductor device in which the first and second resin protrusions and the resin member are made of the same material. The semiconductor device according to any one of claims 1 to 12,
The resin member is a semiconductor device disposed at a corner of the surface. Preparing a wiring board having a base substrate and a wiring pattern;
A semiconductor chip on which an integrated circuit is formed, the electrode having an electrode and the outer surface of the surface on which the electrode is formed has a rectangular shape; and a plurality of first elements disposed in a first region on the first side of the surface. And a plurality of second protrusions disposed in a second region on the second side opposite to the first side of the first region of the surface. and the second resin projections with the having a first and electrical connection portions formed on the second protrusion, and electrically connected to the wiring and the electrode is disposed on the second area A step of preparing a semiconductor device including a protruding member;
Mounting the semiconductor device on the wiring board and bringing the wiring pattern and the electrical connection portion into contact with each other for electrical connection;
Forming an adhesive for bonding the wiring board and the semiconductor device;
Including
The first convex portion has a larger number than the second convex portion,
The protruding member is configured to include a resin member,
The resin member is higher than the second resin protrusion,
The adhesive is an insulating material that does not contain conductive particles,
In the step of mounting the semiconductor device on the wiring substrate, an electronic device manufacturing method in which the first and second convex portions and the resin member are elastically deformed by the semiconductor chip and the wiring substrate. Preparing a wiring board having a base substrate and a wiring pattern;
A semiconductor chip on which an integrated circuit is formed, and a plurality of first electrodes disposed in a first region on a first side of the surface, the electrode having an electrode, and the outer surface of the surface on which the electrode is formed has a rectangular shape The resin protrusions and a plurality of second smaller numbers than the first resin protrusions are disposed in the second region on the second side facing the first side of the first region of the surface. and the resin protrusions, having said electrical connecting portions formed on first and second resin on the projections, and electrically connected to the wiring and the electrode, and the protrusion member disposed in the second area A step of preparing a semiconductor device including:
Mounting the semiconductor device on the wiring board and bringing the wiring pattern and the electrical connection portion into contact with each other for electrical connection;
Forming an adhesive for bonding the wiring board and the semiconductor device;
Including
The protruding member is configured to include a resin member,
The resin member is higher than the second resin protrusion,
The adhesive is an insulating material that does not contain conductive particles,
In the step of mounting the semiconductor device on the wiring substrate, an electronic device manufacturing method in which the first and second resin protrusions and the resin member are elastically deformed by the semiconductor chip and the wiring substrate.

Images