JP2008091628A5 - - Google Patents
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- Publication number
- JP2008091628A5 JP2008091628A5 JP2006270986A JP2006270986A JP2008091628A5 JP 2008091628 A5 JP2008091628 A5 JP 2008091628A5 JP 2006270986 A JP2006270986 A JP 2006270986A JP 2006270986 A JP2006270986 A JP 2006270986A JP 2008091628 A5 JP2008091628 A5 JP 2008091628A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- hole
- substrate
- electrode pad
- resist layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000758 substrate Substances 0.000 claims description 44
- 239000004065 semiconductor Substances 0.000 claims description 16
- 239000004020 conductor Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006270986A JP5103854B2 (ja) | 2006-10-02 | 2006-10-02 | 半導体装置、半導体装置の製造方法、回路基板および電子機器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006270986A JP5103854B2 (ja) | 2006-10-02 | 2006-10-02 | 半導体装置、半導体装置の製造方法、回路基板および電子機器 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012168069A Division JP5655825B2 (ja) | 2012-07-30 | 2012-07-30 | 半導体装置、半導体装置の製造方法、回路基板および電子機器 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008091628A JP2008091628A (ja) | 2008-04-17 |
JP2008091628A5 true JP2008091628A5 (enrdf_load_stackoverflow) | 2012-04-12 |
JP5103854B2 JP5103854B2 (ja) | 2012-12-19 |
Family
ID=39375482
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006270986A Active JP5103854B2 (ja) | 2006-10-02 | 2006-10-02 | 半導体装置、半導体装置の製造方法、回路基板および電子機器 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5103854B2 (enrdf_load_stackoverflow) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010035379A1 (ja) * | 2008-09-26 | 2010-04-01 | パナソニック株式会社 | 半導体装置及びその製造方法 |
EP2338171B1 (en) | 2008-10-15 | 2015-09-23 | ÅAC Microtec AB | Method for making an interconnection via |
JP5596919B2 (ja) * | 2008-11-26 | 2014-09-24 | キヤノン株式会社 | 半導体装置の製造方法 |
US8399354B2 (en) * | 2009-01-13 | 2013-03-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through-silicon via with low-K dielectric liner |
JP5532394B2 (ja) | 2009-10-15 | 2014-06-25 | セイコーエプソン株式会社 | 半導体装置及び回路基板並びに電子機器 |
JP5703556B2 (ja) * | 2009-10-19 | 2015-04-22 | セイコーエプソン株式会社 | 半導体装置及び半導体装置の製造方法、回路基板並びに電子機器 |
US8384225B2 (en) * | 2010-11-12 | 2013-02-26 | Xilinx, Inc. | Through silicon via with improved reliability |
JP5598420B2 (ja) * | 2011-05-24 | 2014-10-01 | 株式会社デンソー | 電子デバイスの製造方法 |
SG11201509673SA (en) * | 2013-06-17 | 2016-01-28 | Applied Materials Inc | Method for copper plating through silicon vias using wet wafer back contact |
JP5765546B2 (ja) * | 2014-03-07 | 2015-08-19 | セイコーエプソン株式会社 | 半導体装置及び回路基板並びに電子機器 |
JP2016225471A (ja) | 2015-05-29 | 2016-12-28 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
US10874426B2 (en) | 2017-02-10 | 2020-12-29 | Covidien Lp | Seal assembly with integral filter and evacuation port |
US11357542B2 (en) | 2019-06-21 | 2022-06-14 | Covidien Lp | Valve assembly and retainer for surgical access assembly |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4110390B2 (ja) * | 2002-03-19 | 2008-07-02 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JP4493516B2 (ja) * | 2004-02-17 | 2010-06-30 | 三洋電機株式会社 | 半導体装置の製造方法 |
JP4376715B2 (ja) * | 2004-07-16 | 2009-12-02 | 三洋電機株式会社 | 半導体装置の製造方法 |
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2006
- 2006-10-02 JP JP2006270986A patent/JP5103854B2/ja active Active