JP2008085089A - 樹脂配線基板および半導体装置 - Google Patents
樹脂配線基板および半導体装置 Download PDFInfo
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- JP2008085089A JP2008085089A JP2006263662A JP2006263662A JP2008085089A JP 2008085089 A JP2008085089 A JP 2008085089A JP 2006263662 A JP2006263662 A JP 2006263662A JP 2006263662 A JP2006263662 A JP 2006263662A JP 2008085089 A JP2008085089 A JP 2008085089A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
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Abstract
【解決手段】平板状の樹脂基材12と、樹脂基材12の一方の面に設けた半導体素子搭載領域30および半導体素子搭載領域30の内側またはその周囲に配置した素子接続端子14と、この素子接続端子14と電気的に接続して樹脂基材12の他方の面に配置した外部接続端子16と、一方の面上において素子接続端子14を露出する形状に形成した第1の樹脂膜26と、他方の面において外部接続端子16を露出する形状に形成した第2の樹脂膜28とを備え、第1の樹脂膜26と第2の樹脂膜28とはガラス転移点、硬化収縮率および熱膨張係数の少なくともいずれかが異なる。
【選択図】図1
Description
また、第1の樹脂膜に含むフィラーと第2の樹脂膜に含むフィラーとが無機粒子からなり、前記第1の樹脂膜に含む前記フィラー量が前記第2の樹脂膜に含む前記フィラー量より少ないことによっても、樹脂配線基板の反りを小さくすることができる。この場合において、第1の樹脂膜中のフィラーと第2の樹脂膜中のフィラーとが材質の異なる無機粒子からなるものであってもよい。さらに、第1の樹脂膜と第2の樹脂膜中の樹脂成分が、エポキシ樹脂またはポリイミド樹脂の何れかであってもよい。
本発明の半導体装置は、上述した何れかの構成の樹脂配線基板からなる第1の樹脂配線基板と第2の樹脂配線基板とを備え、前記第1の樹脂配線基板は一方の表面の前記半導体素子搭載領域の外周領域に前記第2の樹脂配線基板と接続するための積層用接続端子を有し、前記積層用接続端子が前記第1の樹脂膜から露出し、前記第2の樹脂配線基板は前記外部接続端子を前記第1の樹脂配線基板の前記積層用接続端子に対応する位置に設けてなり、前記第1の樹脂配線基板および前記第2の樹脂配線基板のそれぞれの前記半導体素子搭載領域に半導体素子を搭載し、前記第1の樹脂配線基板の前記積層用接続端子と前記第2の樹脂配線基板の前記外部接続端子とを積層用突起電極を介して接続したことを特徴とする。
(第1の実施の形態)
図1は本発明の第1の実施の形態にかかる樹脂配線基板の構成を示す図であり、(a)は半導体搭載領域側から見た平面図、(b)は外部接続端子側から見た平面図、(c)は(a)および(b)におけるA−A線に沿った断面図である。
実験例1として、第1の樹脂膜26のフィラーの添加量を5重量%〜10重量%とし、第2の樹脂膜28のフィラーの添加量を30重量%〜50重量%とした樹脂配線基板10を作製した。
比較例2として、第1の樹脂膜および第2の樹脂膜ともにフィラーの添加量を5重量%〜10重量%とした樹脂配線基板を作製した。
すなわち、配線パターン22およびインナービア24が形成されている樹脂基材12の両面に銅箔を貼り付ける。樹脂基材12の厚みは、40μm〜400μmの範囲であり、より望ましくは200μm程度とする。その後、貫通導体20の形成と銅箔の貼り付けおよび銅箔のエッチング加工、さらには必要な箇所に金メッキ等を施すことで、樹脂配線基板10を作製する。
次に、図3(d)に示すように、樹脂基材12の他方の表面に形成されている外部接続端子16上に、例えばスズ(Sn)−銀(Ag)−銅(Cu)系合金からなる接続用突起電極49を載置する。その後、約240℃の温度に加熱して外部接続端子16に接続用突起電極49を接合する。これにより、本実施の形態のBGA構成からなる半導体装置40が実現する。
(第2の実施の形態)
図4は、本発明の第2の実施の形態における樹脂配線基板50の構成を示す図であり、(a)は半導体素子搭載側から見た平面図、(b)は(a)におけるB−B線に沿った断面図である。
(第3の実施の形態)
図6および図7は本発明の第3の実施の形態にかかる樹脂配線基板の構成を示すものであり、主として積層構成の半導体装置を構成するためのものである。図6(a)および図7(a)は半導体素子搭載側から見た平面図、図6(b)は図6(a)におけるC−C線に沿った断面図、図7(b)は図7(a)におけるD−D線に沿った断面図である。
図6に示すように、第1の樹脂配線基板100は、平板状の樹脂基材102と、樹脂基材102の一方の面上に設けた半導体素子搭載領域122の内側に配置した素子接続端子104と、素子接続端子104と電気的に接続して樹脂基材102の他方の面上にアレイ状に配置した外部接続端子110と、樹脂基材102の一方の面を覆って、かつ素子接続端子104、配線パターン106、積層用接続端子108を露出させて形成した第1の樹脂膜118と、他方の面上において外部接続端子110を露出させて、かつ他の領域を覆って形成した第2の樹脂膜120とを備えている。
第1の樹脂膜118と第2の樹脂膜120とは、ガラス転移点、硬化収縮率および熱膨張係数の少なくとも何れかが異なる材料からなる。ここでは、第1の樹脂膜118の硬化収縮率を第2の樹脂膜120の硬化収縮率より大きく、かつ第1の樹脂膜118の熱膨張係数を第2の樹脂膜120の熱膨張係数より大きく設定している。
図8に示すように、第1の半導体装置150は第1の樹脂配線基板100の半導体素子搭載領域122上に搭載した半導体素子152を封止樹脂158により第1の樹脂配線基板100に接着している。半導体素子152は電極端子154上に突起電極156を形成しており、電極端子154が突起電極156を介して第1の樹脂配線基板100の素子接続端子104に接続している。
図10に示すように、半導体装置170は、第1の半導体装置150上に第2の半導体装置160を搭載し、第1の半導体装置150の第1の樹脂配線基板100に設けられた積層用接続端子108と第2の半導体装置160の第2の樹脂配線基板130の外部接続端子140とを積層用突起電極174を介して接続した構成からなる。積層用突起電極174は、例えばハンダバンプや表面にハンダ被膜を形成した金属柱や金属球等を用いることができる。
12,62,102,132 樹脂基材
14,64,104,134 素子接続端子
16,66,110,140 外部接続端子
18,22,68,106,114,136 配線パターン
20,72,112,142 貫通導体
24,116 インナービア
26,74,118,144 第1の樹脂膜
28,76,120,146 第2の樹脂膜
30,122 半導体素子搭載領域
40,80,170 半導体装置
42,82,152,162 半導体素子
44,84,154,164 電極端子
46,156 突起電極
48,158 封止樹脂
49,92 接続用突起電極
70,138 ダイパターン
86,166 金属細線
88,168 導電性接着剤
90 封止樹脂
100 第1の樹脂配線基板(樹脂配線基板)
108 積層用接続端子
130 第2の樹脂配線基板(樹脂配線基板)
150 第1の半導体装置(半導体装置)
160 第2の半導体装置(半導体装置)
174 積層用突起電極
Claims (12)
- 平板状の樹脂基材と、前記樹脂基材の一方の面に設けた半導体素子搭載領域および前記半導体素子搭載領域の内側またはその周囲に配置した素子接続端子と、前記素子接続端子と電気的に接続して前記樹脂基材の他方の面上に配置した外部接続端子と、前記樹脂基材の一方の面を覆って、かつ前記素子接続端子および前記半導体素子搭載領域が露出する形状に形成した第1の樹脂膜と、前記樹脂基材の他方の面を覆って、かつ前記外部接続端子が露出する形状に形成した第2の樹脂膜とを備え、前記第1の樹脂膜と前記第2の樹脂膜とが、ガラス転移点、硬化収縮率または熱膨張係数の少なくとも1つが異なることを特徴とする樹脂配線基板。
- 前記外部接続端子は前記樹脂基材の他方の面にアレイ状に配置していることを特徴とする請求項1に記載の樹脂配線基板。
- 前記第1の樹脂膜のガラス転移点が前記第2の樹脂膜のガラス転移点より高いことを特徴とする請求項1または請求項2に記載の樹脂配線基板。
- 前記第1の樹脂膜の硬化収縮率が前記第2の樹脂膜の硬化収縮率より大きいことを特徴とする請求項1から請求項3の何れか1項に記載の樹脂配線基板。
- 前記第1の樹脂膜の熱膨張係数が前記第2の樹脂膜の熱膨張係数より大きいことを特徴とする請求項1から請求項4の何れか1項に記載の樹脂配線基板。
- 前記第1の樹脂膜に含むフィラーと前記第2の樹脂膜に含むフィラーとが無機粒子からなり、前記第1の樹脂膜に含む前記フィラー量が前記第2の樹脂膜に含む前記フィラー量より少ないことを特徴とする請求項1から請求項5の何れか1項に記載の樹脂配線基板。
- 前記第1の樹脂膜に含むフィラーと前記第2の樹脂膜に含むフィラーとが材質の異なる無機粒子からなることを特徴とする請求項6に記載の樹脂配線基板。
- 前記第1の樹脂膜と前記第2の樹脂膜中の樹脂成分が、エポキシ樹脂またはポリイミド樹脂の何れかであることを特徴とする請求項6または請求項7に記載の樹脂配線基板。
- 前記樹脂基材は、ガラスエポキシ樹脂、エポキシ樹脂、ビスマレイミド−トリアジン樹脂(BT樹脂)、アクリルブタジェンスチレン樹脂(ABS樹脂)、ポリイミド樹脂、ポリアミド樹脂またはアクリル樹脂から選択された1種類からなることを特徴とする請求項1から請求項8の何れか1項に記載の樹脂配線基板。
- 請求項1から請求項9の何れか1項に記載の樹脂配線基板と、前記樹脂配線基板の前記半導体素子搭載領域に搭載した半導体素子とを有することを特徴とする半導体装置。
- 請求項1から請求項9の何れか1項に記載の樹脂配線基板からなる第1の樹脂配線基板と第2の樹脂配線基板とを備え、前記第1の樹脂配線基板は一方の表面の前記半導体素子搭載領域の外周領域に前記第2の樹脂配線基板と接続するための積層用接続端子を有し、前記積層用接続端子が前記第1の樹脂膜から露出し、前記第2の樹脂配線基板は前記外部接続端子を前記第1の樹脂配線基板の前記積層用接続端子に対応する位置に設けてなり、前記第1の樹脂配線基板および前記第2の樹脂配線基板のそれぞれの前記半導体素子搭載領域に半導体素子を搭載し、前記第1の樹脂配線基板の前記積層用接続端子と前記第2の樹脂配線基板の前記外部接続端子とを積層用突起電極を介して接続したことを特徴とする半導体装置。
- 前記第1の樹脂配線基板は前記外部接続端子を前記樹脂基材の他方の面にアレイ状に配置していることを特徴とする請求項11に記載の半導体装置。
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