JP2008074941A - Resin composition for semiconductor sealing and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a resin composition for semiconductor sealing use having excellent soldering resistance and flame retardancy and exhibiting excellent high-temperature storage property or low warpage. <P>SOLUTION: The resin composition for semiconductor sealing use contains an epoxy resin expressed by general formula (1), a compound having ≥2 phenolic hydroxyl groups, an inorganic filler and a cure accelerator. In the formula, R1 is a hydrocarbon group; OG is a glycidyl ether group and n1 is an integer of 0-5. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a semiconductor sealing resin composition and a semiconductor device.

  In recent years, electronic devices have become more and more compact in size, light weight, and high in performance, and semiconductor elements (hereinafter referred to as “elements” and “chips”) have been increasingly integrated, and semiconductor devices (hereinafter “ The demand for an epoxy resin composition for encapsulating a semiconductor (hereinafter also referred to as “encapsulant” or “encapsulant”) is becoming increasingly severe as surface mounting of a package is also promoted. It has become. In particular, surface mounting of semiconductor devices has become common, and moisture-absorbed semiconductor devices are exposed to high temperatures during soldering, and cracks are generated in the semiconductor devices due to the explosive stress of vaporized water vapor, or semiconductors The occurrence of delamination at the interface between the element or lead frame and the cured product of the epoxy resin composition for semiconductor encapsulation causes a defect that greatly impairs the electrical reliability of the semiconductor device. Improvement of solder resistance is a major issue. Furthermore, the use of lead-free solder, which has a higher melting point than before, has been increasing due to the abolition of the use of lead. By using this lead-free solder, it is necessary to increase the mounting temperature by about 20 ° C. compared to the conventional case, and there has been a problem that the reliability of the semiconductor device after mounting is significantly reduced compared to the current situation. Moreover, the request | requirement which provides flame resistance, without using flame retardants, such as a Br compound and antimony oxide, from the environmental problem is also increasing. For improving solder resistance and flame resistance, the former can reduce water absorption and the latter can reduce flammable resin by increasing the filling of the inorganic filler, which is effective as an improved technique for both. Against this background, the trend of recent epoxy resin compositions for semiconductor encapsulation is becoming more likely to apply a resin with a lower viscosity and to mix more inorganic fillers.

In order to maintain a low viscosity and a high fluidity at the time of molding, a resin having a low melt viscosity is used (for example, refer to Patent Document 1), or an inorganic filler is added to a silane cup in order to increase the blending amount of the inorganic filler. A method of performing a surface treatment with a ring agent is known (for example, see Patent Document 2). However, these methods alone cannot provide both solder resistance and flame resistance at the time of mounting, and a technique for achieving both of them has been demanded.
Therefore, the present applicant has proposed a biphenylene skeleton-containing phenol aralkyl type epoxy resin excellent in solder resistance and flame resistance, and an epoxy resin composition for semiconductor encapsulation using a biphenylene skeleton-containing phenol aralkyl type curing agent (for example, And Patent Document 3). Since this epoxy resin composition for semiconductor encapsulation contains a large amount of aromatic rings in the molecular skeleton, during combustion, a carbonized layer is formed on the surface of the molded product, thereby suppressing further combustion and exhibiting excellent flame resistance. Moreover, the improvement in hydrophobicity due to the inclusion of the aromatic ring structure and the reduction in elastic modulus at high temperatures due to the increase in the distance between cross-linking points contributes to the improvement in solder resistance.

On the other hand, the advancement of semiconductor electronics has promoted the mounting of a large number of semiconductor devices on outdoor equipment such as automobiles, and demanded more strict reliability in the temperature environment than when used in indoor equipment. In particular, there is storage reliability (hereinafter referred to as “high temperature storage characteristics”) that allows the semiconductor device to maintain its function even under a high temperature atmosphere of about 150 ° C., which is an essential requirement for in-vehicle applications. A cured product of an epoxy resin composition for semiconductor encapsulation using an aralkyl type epoxy resin or a phenol aralkyl type curing agent containing a biphenylene skeleton does not have a high glass transition temperature (hereinafter also referred to as “Tg”), and does not have high-temperature storage characteristics. In some cases, it was sufficient.
From the above, in the lead frame package, there has been a demand for a technique that can satisfy the requirements for high-temperature storage characteristics without impairing the solder resistance and the flame resistance.

Furthermore, in the market trend of downsizing, weight reduction, and high functionality of electronic devices, semiconductors have been increasingly integrated and the surface mounting of semiconductor packages has been promoted. Developed and starting to migrate from traditionally structured packages.
The area surface mount type semiconductor package is typically a ball grid array (hereinafter referred to as “BGA”) or a chip size package (hereinafter referred to as “CSP”) in pursuit of further miniaturization. These are high-pin counts that are approaching the limit in conventional surface mount packages such as quad flat packages (hereinafter referred to as “QFP”) and small outline packages (hereinafter referred to as “SOP”).・ It was developed to meet the demand for higher speed. The structure is one side of a rigid circuit board typified by bismaleimide triazine (hereinafter referred to as “BT”) resin / copper foil circuit board or a flexible circuit board typified by polyimide resin film / copper foil circuit board. A semiconductor element is mounted on the element, and only the element mounting surface, that is, one side of the substrate is molded and sealed with a resin composition for semiconductor sealing. In addition, solder balls are formed in parallel in a grid pattern on the surface opposite to the element mounting surface of the substrate, and the package is bonded to a mother board that is surface-mounted. Furthermore, a structure using a metal substrate such as a lead frame in addition to the organic circuit substrate has been devised as a substrate on which elements are mounted.

  The structure of these area surface mount type semiconductor packages is in the form of single-side sealing in which only the element mounting surface of the substrate is sealed with a resin composition for semiconductor sealing, and the solder ball forming surface side is not sealed. In rare cases, when a metal substrate such as a lead frame is used as a substrate on which an element is mounted, a sealing resin layer of about several tens of μm may exist on the solder ball formation surface, but on the element mounting surface, Since a sealing resin layer of about 100 μm to several mm is formed, it is substantially single-side sealed. For this reason, due to mismatch of thermal expansion / shrinkage between the organic substrate or metal substrate and the cured resin composition for semiconductor encapsulation, or due to curing shrinkage during molding / curing of the semiconductor encapsulation resin composition. Due to the influence, the area surface mount type semiconductor package is likely to warp immediately after molding. In addition, when solder bonding is performed on a mother board on which an area surface mount type semiconductor package is mounted, a heating process of 200 ° C. or more is performed, but at this time, warping of the package occurs, and a large number of solder balls do not become flat, There is a case where a problem arises that the electrical connection reliability is lowered due to floating from the motherboard on which the package is mounted.

In a package in which only one surface on a substrate such as the area surface mount semiconductor package is sealed with a resin composition for semiconductor encapsulation, the shrinkage of the resin composition for semiconductor encapsulation is reduced in order to reduce warpage. Two methods for reducing the linear expansion coefficient of the substrate and the linear expansion coefficient of the cured resin composition for semiconductor encapsulation are important.
In the organic substrate, resins having a high glass transition temperature such as BT resin and polyimide resin are widely used, and these have a Tg higher than around 170 ° C. which is the molding temperature of the resin composition for semiconductor encapsulation. Accordingly, these organic substrates thermally shrink only in the region where the linear expansion coefficient of the organic substrate is α1 during the cooling process from the molding temperature of the resin composition for semiconductor encapsulation to room temperature. Therefore, if the Tg of the cured product of the resin composition for semiconductor encapsulation is high, the α1 of the cured product is about the same as that of the circuit board, and the cure shrinkage is zero, the warping of the package becomes almost zero. Conceivable. For this reason, a technique has been proposed in which Tg is increased by a combination of a triphenolmethane type epoxy resin and a triphenolmethane type phenol resin, and the curing shrinkage of the resin composition for semiconductor encapsulation is reduced (for example, Patent Document 4). reference.). On the other hand, a method of matching α1 with a substrate by increasing the blending amount of the inorganic filler using a resin having a low melt viscosity has been proposed (for example, see Patent Document 5). It has also been proposed to use a resin having a naphthalene ring skeleton that can reduce the linear expansion coefficient (see, for example, Patent Document 6). However, although these semiconductor sealing resin compositions are unlikely to warp, the cured product has a high water absorption rate, so that cracks are likely to occur during soldering. Moreover, the flame resistance may not be practically used unless a flame retardant is used.
From the above, there has been a demand for a technology that can satisfy the demand for low warpage without losing solder resistance and flame resistance in the area surface mount semiconductor package.
As described above, in both the lead frame package and the area surface mount semiconductor package, the high-temperature storage characteristics and low warpage properties are obtained while satisfying the required high level of solder resistance and flame resistance. Development was desired.

JP-A-7-130919 JP-A-8-20673 JP-A-11-140277 Japanese Patent Laid-Open No. 11-147940 Japanese Patent Laid-Open No. 11-1541 JP 2001-233936 A

  The present invention provides a resin composition for encapsulating a semiconductor excellent in solder resistance and flame resistance and excellent in high-temperature storage characteristics or low warpage, and a semiconductor device using the same.

（ただし、上記一般式（１）において、Ｒ１は炭素数１ないし２０の炭化水素基であり、互いに同じであっても異なっていても良い。ＯＧはグリシジルエーテル基である。ＯＧ及びＲ１の結合位置は、−Ｏ−が結合している芳香環側及び他方の芳香環側のいずれであってもよい。ｎ１は０ないし５の整数であり、全体の平均値は０より大きく、５より小さい正数である。ｍ１は０ないし６の整数、ｋ１は１又は２である。） The present invention
[1] An epoxy resin (A) represented by the following general formula (1), a compound (B) containing two or more phenolic hydroxyl groups, an inorganic filler (C), a curing accelerator (D), A resin composition for semiconductor encapsulation, comprising:

(In the general formula (1), R1 is a hydrocarbon group having 1 to 20 carbon atoms, and may be the same or different. OG is a glycidyl ether group. Bond of OG and R1) The position may be either the aromatic ring side to which —O— is bonded or the other aromatic ring side, n1 is an integer of 0 to 5, and the overall average value is larger than 0 and smaller than 5. (M1 is an integer from 0 to 6, and k1 is 1 or 2.)

（ただし、上記一般式（２）において、−Ｒ２−はフェニレン基、ビフェニレン基又はナフチレン基である。−Ｒ３（ＯＨ）−はヒドロキシフェニレン基又は１−ヒドロキシナフチレン基、２−ヒドロキシナフチレン基である。Ｒ４、Ｒ５は、それぞれＲ３、Ｒ２に導入される基で、炭素数１ないし１０の炭化水素基であり、それらは互いに同じであっても異なっていても良い。ｎ２の平均値は１以上、１０以下の正数、ｋ２は０ないし５の整数、ｍ２は０ないし８の整数である。） [2] The resin composition for encapsulating a semiconductor according to [1] above, wherein the compound (B) containing two or more phenolic hydroxyl groups contains a compound represented by the following general formula (2). A semiconductor sealing resin composition,

(In the general formula (2), -R2- is a phenylene group, a biphenylene group, or a naphthylene group. -R3 (OH)-is a hydroxyphenylene group, a 1-hydroxynaphthylene group, or a 2-hydroxynaphthylene group. R4 and R5 are groups introduced into R3 and R2, respectively, and are hydrocarbon groups having 1 to 10 carbon atoms, which may be the same or different from each other. A positive number of 1 or more and 10 or less, k2 is an integer of 0 to 5, and m2 is an integer of 0 to 8.)

（ただし、上記一般式（３）において、Ｒ４、Ｒ５は、炭素数１ないし１０の炭化水素基であり、それらは互いに同じであっても異なっていても良い。ｎ３の平均値は１以上、１０以下の正数、ｋ３は０ないし３の整数、ｍ３は０ないし４の整数である。） [3] In the resin composition for encapsulating a semiconductor according to [1] or [2], the compound (B) containing two or more phenolic hydroxyl groups is represented by the following general formula (3). A semiconductor sealing resin composition comprising a compound,

(However, in the general formula (3), R4 and R5 are hydrocarbon groups having 1 to 10 carbon atoms, and they may be the same or different. The average value of n3 is 1 or more, A positive number of 10 or less, k3 is an integer of 0 to 3, and m3 is an integer of 0 to 4.)

（ただし、上記一般式（４）において、Ｒ４、Ｒ５は、炭素数１ないし１０の炭化水素基であり、それらは互いに同じであっても異なっていても良い。ｎ４の平均値は１以上、１０以下の正数、ｋ４は０ないし５の整数、ｍ４は０ないし４の整数である。） [4] In the resin composition for encapsulating a semiconductor according to [1] or [2], the compound (B) containing two or more phenolic hydroxyl groups is represented by the following general formula (4). A semiconductor sealing resin composition comprising a compound,

(However, in the general formula (4), R4 and R5 are hydrocarbon groups having 1 to 10 carbon atoms, and they may be the same or different. The average value of n4 is 1 or more. A positive number of 10 or less, k4 is an integer of 0 to 5, and m4 is an integer of 0 to 4.)

（ただし、上記一般式（５）において、Ｐはリン原子を表す。Ｒ６、Ｒ７、Ｒ８及びＲ９は芳香族基、又はアルキル基を表す。Ａはヒドロキシル基、カルボキシル基、チオール基から選ばれる官能基のいずれかを芳香環に少なくとも１つ有する芳香族有機酸のアニオンを表す。ＡＨはヒドロキシル基、カルボキシル基、チオール基から選ばれる官能基のいずれかを芳香環に少なくとも１つ有する芳香族有機酸を表す。ａ、ｂは１ないし３の整数、ｃは０ないし３の整数であり、かつａ＝ｂである。） [5] In the resin composition for semiconductor encapsulation according to any one of [1] to [4], the curing accelerator (D) is a compound represented by the following general formula (5): A semiconductor represented by the following general formula (6), a compound represented by the following general formula (7), and a compound represented by the following general formula (8): Sealing resin composition,

(However, in the said General formula (5), P represents a phosphorus atom. R6, R7, R8, and R9 represent an aromatic group or an alkyl group. A is a function chosen from a hydroxyl group, a carboxyl group, and a thiol group. An anion of an aromatic organic acid having at least one of the groups in the aromatic ring AH represents an aromatic organic having at least one functional group selected from a hydroxyl group, a carboxyl group, and a thiol group in the aromatic ring. Represents an acid, a and b are integers of 1 to 3, c is an integer of 0 to 3, and a = b.

（ただし、上記一般式（６）において、Ｐはリン原子を表す。Ｘ１は水素又は炭素数１ないし３のアルキル基、Ｙ１は水素又はヒドロキシル基を表す。ｍ６、ｎ６は１ないし３の整数。）

(However, in the said General formula (6), P represents a phosphorus atom. X1 represents hydrogen or a C1-C3 alkyl group, Y1 represents hydrogen or a hydroxyl group. M6 and n6 are integers of 1-3. )

（ただし、上記一般式（７）において、Ｐはリン原子を表す。Ｒ１０、Ｒ１１及びＲ１２は炭素数１ないし１２のアルキル基又は炭素数６ないし１２のアリール基を表し、互いに同一であっても異なっていてもよい。Ｒ１３、Ｒ１４及びＲ１５は水素原子又は炭素数１ないし１２の炭化水素基を表し、互いに同一であっても異なっていてもよく、Ｒ１３とＲ１４が結合して環状構造となっていてもよい。）

(In the above general formula (7), P represents a phosphorus atom. R10, R11 and R12 represent an alkyl group having 1 to 12 carbon atoms or an aryl group having 6 to 12 carbon atoms, and may be the same as each other). R13, R14 and R15 each represents a hydrogen atom or a hydrocarbon group having 1 to 12 carbon atoms and may be the same or different from each other, and R13 and R14 are bonded to form a cyclic structure. May be.)

（ただし、上記一般式（８）において、Ａ１は窒素原子又はリン原子を表す。Ｓｉは珪素原子を表す。Ｒ１６、Ｒ１７、Ｒ１８及びＲ１９は、それぞれ、芳香環又は複素環を有する有機基、或いは脂肪族基を表し、互いに同一であっても異なっていてもよい。Ｘ２は、基Ｙ２及びＹ３と結合する有機基である。Ｘ３は、基Ｙ４及びＹ５と結合する有機基である。Ｙ２及びＹ３は、プロトン供与性置換基がプロトンを放出してなる基であり、それらは互いに同一であっても異なっていてもよく、同一分子内の基Ｙ２、及びＹ３が珪素原子と結合してキレート構造を形成するものである。Ｙ４及びＹ５は、プロトン供与性置換基がプロトンを放出してなる基であり、同一分子内の基Ｙ４及びＹ５が珪素原子と結合してキレート構造を形成するものである。Ｘ２、及びＸ３は互いに同一であっても異なっていてもよく、Ｙ２、Ｙ３、Ｙ４、及びＹ５は互いに同一であっても異なっていてもよい。Ｚ１は芳香環又は複素環を有する有機基或いは脂肪族基を表す。）

(In the above general formula (8), A1 represents a nitrogen atom or a phosphorus atom. Si represents a silicon atom. R16, R17, R18 and R19 are each an organic group having an aromatic ring or a heterocyclic ring, or Represents an aliphatic group, which may be the same or different from each other, X2 represents an organic group bonded to the groups Y2 and Y3, and X3 represents an organic group bonded to the groups Y4 and Y5. Y3 is a group formed by releasing a proton from a proton-donating substituent, which may be the same or different from each other, and the groups Y2 and Y3 in the same molecule are bonded to a silicon atom to form a chelate. Y4 and Y5 are groups formed by proton-donating substituents releasing protons, and groups Y4 and Y5 in the same molecule are combined with a silicon atom to form a chelate structure. X2 and X3 may be the same or different from each other, and Y2, Y3, Y4 and Y5 may be the same or different from each other, and Z1 is an organic having an aromatic ring or a heterocyclic ring. Represents a group or an aliphatic group.)

[6] The resin composition for semiconductor encapsulation according to any one of [1] to [5], further comprising a silane coupling agent (E) and two or more adjacent members constituting an aromatic ring. A resin composition for encapsulating a semiconductor, comprising a compound (F) in which a hydroxyl group is bonded to each carbon atom,
[7] In the resin composition for encapsulating a semiconductor according to [6], the compound (F) is a compound in which a hydroxyl group is bonded to each of two adjacent carbon atoms constituting an aromatic ring. A resin composition for encapsulating a semiconductor,
[8] In the resin composition for encapsulating a semiconductor according to [6], the compound (F) is a compound in which a hydroxyl group is bonded to each of two or more adjacent carbon atoms constituting a naphthalene ring. A resin composition for encapsulating a semiconductor,
[9] In the resin composition for encapsulating a semiconductor according to [6], the compound (F) is a compound in which a hydroxyl group is bonded to each of two adjacent carbon atoms constituting a naphthalene ring. A resin composition for encapsulating a semiconductor,
[10] In the resin composition for semiconductor encapsulation according to any one of [6] to [9], the compound (F) is contained in an amount of 0.01% by weight or more based on the total amount of the resin composition. A resin composition for encapsulating a semiconductor, comprising:
[11] The resin composition for semiconductor encapsulation according to any one of [6] to [10], wherein the silane coupling agent (E) is 0.01% by weight of the resin composition as a whole. Or more, 1 wt% or less, a semiconductor sealing resin composition,
[12] In the resin composition for encapsulating a semiconductor according to any one of [1] to [11], the inorganic filler (C) is 80% by weight or more of the total resin composition, 92 A resin composition for encapsulating a semiconductor, comprising:
[13] A semiconductor device, wherein a semiconductor element is sealed with a cured product of the resin composition for semiconductor sealing according to any one of [1] to [12],
[14] A semiconductor device used for an electronic component that requires operation guarantee in a high-temperature environment exceeding 150 ° C., which is obtained by curing the resin composition for semiconductor encapsulation according to the above [3]. A semiconductor device characterized by sealing a semiconductor element;
[15] A semiconductor element is mounted on one side of the substrate, and substantially only one side of the substrate surface on which the semiconductor element is mounted is made of a cured product of the resin composition for semiconductor encapsulation according to the above [4]. An area surface-mounting semiconductor device, characterized by being sealed;
It is.

  It is possible to obtain a resin composition for encapsulating a semiconductor which is excellent in solder resistance and flame resistance and excellent in high temperature storage characteristics or low warpage.

The present invention relates to an epoxy resin (A) represented by the general formula (1), a compound (B) containing two or more phenolic hydroxyl groups, an inorganic filler (C), a curing accelerator (D), By containing, it is possible to obtain a resin composition for encapsulating a semiconductor that is excellent in high solder resistance and flame resistance, and also excellent in high-temperature storage characteristics or low warpage.
Hereinafter, each component will be described in detail.

  Since the epoxy resin (A) represented by the following general formula (1) used in the present invention has a naphthalene skeleton in the molecule, it is bulky and has high rigidity. The glass transition temperature of the cured product is increased, and the semiconductor device having excellent high-temperature storage characteristics can be obtained. Further, by containing a naphthalene skeleton, the linear expansion coefficient of the cured product of the epoxy resin composition using the skeleton is reduced, and there is an effect that an area surface mounting type semiconductor device excellent in low warpage can be obtained. The epoxy resin (A) is a mixture of compounds in which the value of n1 in the following general formula (1) is an integer of 0 to 5, preferably a mixture of compounds in which the value of n1 is an integer of 1 to 2. The main component is desirable. As a result, the number of epoxy groups in the main component becomes 2 to 3, and the elastic modulus of the cured product of the epoxy resin composition using the epoxy group can be lowered, and a semiconductor device having excellent solder resistance can be obtained. Moreover, R1 in the following general formula (1) is a hydrocarbon group containing an alkyl group or an aromatic group, and may be the same or different from each other, but is a hydrocarbon group containing an aromatic group Is preferred. Thereby, in addition to the naphthalene skeleton, the aromatic ring carbon further increases, and the cured product of the epoxy resin composition using the skeleton has an effect of particularly excellent flame resistance. Examples of the epoxy resin (A) represented by the following general formula (1) used in the present invention include compounds represented by the following formula (9). There is no particular limitation. The method for producing the epoxy resin (A) represented by the following general formula (1) used in the present invention is not particularly limited. For example, a naphthalene compound having two or more hydroxyl groups is converted into an ether by a dehydration reaction. Then, it can be obtained by a method in which a hydroxyl group that has not been etherified is glycidyl etherified.

（ただし、上記一般式（１）において、Ｒ１は炭素数１ないし２０の炭化水素基であり、互いに同じであっても異なっていても良い。ＯＧはグリシジルエーテル基である。ＯＧ及びＲ１の結合位置は、−Ｏ−が結合している芳香環側及び他方の芳香環側のいずれであってもよい。ｎ１は０ないし５の整数であり、全体の平均値は０より大きく、５より小さい正数である。ｍ１は０ないし６の整数、ｋ１は１又は２である。）

（ただし、上記式（９）において、ｎ９は０ないし５の整数である。）

(In the general formula (1), R1 is a hydrocarbon group having 1 to 20 carbon atoms, and may be the same or different. OG is a glycidyl ether group. Bond of OG and R1) The position may be either the aromatic ring side to which —O— is bonded or the other aromatic ring side, n1 is an integer of 0 to 5, and the overall average value is larger than 0 and smaller than 5. (M1 is an integer from 0 to 6, and k1 is 1 or 2.)

(However, in the above formula (9), n9 is an integer of 0 to 5.)

In this invention, another epoxy resin can be used together in the range by which the effect by using the epoxy resin (A) represented by the said General formula (1) is not impaired. Examples of epoxy resins that can be used in combination include biphenyl type epoxy resins, bisphenol type epoxy resins, stilbene type epoxy resins, phenol novolac type epoxy resins, cresol novolac type epoxy resins, triphenolmethane type epoxy resins, and phenol aralkyl type epoxy resins having a phenylene skeleton. Resin, phenol aralkyl type epoxy resin having biphenylene skeleton, naphthol type epoxy resin, alkyl modified triphenol methane type epoxy resin, triazine nucleus-containing epoxy resin, dicyclopentadiene modified phenol type epoxy resin, dihydroanthrahydroquinone glycidyl etherified epoxy resin Etc. In consideration of moisture resistance reliability as an epoxy resin composition for semiconductor encapsulation, it is preferable that Na ions and Cl ions, which are ionic impurities, be as small as possible. From the viewpoint of curability, the epoxy equivalent is 100 g / eq or more and 500 g / The thing below eq is preferable.
The blending ratio of the epoxy resin (A) represented by the general formula (1) when used in combination is preferably 10% by weight or more, more preferably 30% by weight or more, particularly with respect to the total epoxy resin. Preferably it is 50 weight% or more. When the blending ratio of the epoxy resin (A) is within the above range, an effect of improving high-temperature storage characteristics due to an increase in glass transition temperature and an effect of improving low warpage due to a decrease in linear expansion coefficient can be obtained.

  In the present invention, a compound (B) containing two or more phenolic hydroxyl groups is used as a curing agent from the viewpoints of flame resistance, moisture resistance, electrical properties, curability, storage stability, and the like. The compound (B) containing two or more phenolic hydroxyl groups is a monomer, oligomer or polymer in general having two or more phenolic hydroxyl groups in one molecule, and its molecular weight and molecular structure are not particularly limited. For example, phenol novolak resin, cresol novolak resin, triphenolmethane type phenol resin, terpene modified phenol resin, dicyclopentadiene modified phenol resin, phenol aralkyl resin having phenylene skeleton and / or biphenylene skeleton, phenylene skeleton and / or biphenylene skeleton Examples thereof include naphthol aralkyl resins, bisphenol compounds, and the like, and these may be used alone or in combination of two or more. Among these, the hydroxyl equivalent is preferably 90 g / eq or more and 300 g / eq or less from the viewpoint of curability.

Moreover, in this invention, it is preferable that the compound represented by following General formula (2) is included as a compound (B) containing two or more phenolic hydroxyl groups. Since the compound represented by the following general formula (2) has an aralkyl group (—CH ₂ —R ₂ —CH ₂ —) containing a phenylene, biphenylene, or naphthylene skeleton, the distance between cross-linking points as compared with a novolak type phenol resin. Therefore, the cured product of the epoxy resin composition using these has a low elastic modulus at a high temperature and the content ratio of the phenolic hydroxyl group is small. Water absorption can also be realized. The manifestation of these characteristics can contribute to the improvement of solder resistance. Further, in a compound containing a naphthylene skeleton, low warpage in an area surface mount type semiconductor package due to an increase in Tg due to rigidity due to the naphthalene ring and a decrease in linear expansion coefficient due to intermolecular interaction due to its planar structure. Can be improved. In the compound represented by the following general formula (2), the aromatic group (-R3 (OH)-) containing a phenolic hydroxyl group may be a hydroxyphenylene group, a 1-hydroxynaphthylene group, or 2-hydroxy. Any of the naphthylene groups may be used, but in particular, in the case of the hydroxy naphthylene group, similarly to the compound containing the naphthylene skeleton, an increase in Tg and a linear expansion coefficient in the cured product of the epoxy resin composition using the naphthylene skeleton are used. As a result of the reduction, the effect of improving the low warpage is obtained, and further, since it has a large amount of aromatic carbon, it is also possible to realize an improvement in flame resistance in a cured product of an epoxy resin composition using the same.
Examples of the compound represented by the following general formula (2) used in the present invention include a phenol aralkyl resin containing a phenylene skeleton, a phenol aralkyl resin containing a biphenylene skeleton represented by the following general formula (3), and naphthylene. Examples thereof include a phenol aralkyl resin containing a skeleton and a naphthol aralkyl resin containing a phenylene skeleton represented by the following general formula (4). However, the structure is not particularly limited as long as the structure is the following general formula (2).

（ただし、上記一般式（２）において、−Ｒ２−はフェニレン基、ビフェニレン基又はナフチレン基である。−Ｒ３（ＯＨ）−はヒドロキシフェニレン基又は１−ヒドロキシナフチレン基、２−ヒドロキシナフチレン基である。Ｒ４、Ｒ５は、それぞれＲ３、Ｒ２に導入される基で、炭素数１ないし１０の炭化水素基であり、それらは互いに同じであっても異なっていても良い。ｎ２の平均値は１以上、１０以下の正数、ｋ２は０ないし５の整数、ｍ２は０ないし８の整数である。）

(In the general formula (2), -R2- is a phenylene group, a biphenylene group, or a naphthylene group. -R3 (OH)-is a hydroxyphenylene group, a 1-hydroxynaphthylene group, or a 2-hydroxynaphthylene group. R4 and R5 are groups introduced into R3 and R2, respectively, and are hydrocarbon groups having 1 to 10 carbon atoms, which may be the same or different from each other. A positive number of 1 or more and 10 or less, k2 is an integer of 0 to 5, and m2 is an integer of 0 to 8.)

（ただし、上記一般式（３）において、Ｒ４、Ｒ５は、炭素数１ないし１０の炭化水素基であり、それらは互いに同じであっても異なっていても良い。ｎ３の平均値は１以上、１０以下の正数、ｋ３は０ないし３の整数、ｍ３は０ないし４の整数である。）

(However, in the general formula (3), R4 and R5 are hydrocarbon groups having 1 to 10 carbon atoms, and they may be the same or different. The average value of n3 is 1 or more, A positive number of 10 or less, k3 is an integer of 0 to 3, and m3 is an integer of 0 to 4.)

（ただし、上記一般式（４）において、Ｒ４、Ｒ５は、炭素数１ないし１０の炭化水素基であり、それらは互いに同じであっても異なっていても良い。ｎ４の平均値は１以上、１０以下の正数、ｋ４は０ないし５の整数、ｍ４は０ないし４の整数である。）

(However, in the general formula (4), R4 and R5 are hydrocarbon groups having 1 to 10 carbon atoms, and they may be the same or different. The average value of n4 is 1 or more. A positive number of 10 or less, k4 is an integer of 0 to 5, and m4 is an integer of 0 to 4.)

  In the present invention, the mixing ratio of the compound represented by the general formula (2) is not particularly limited, but is preferably 10 with respect to the total amount of the compound (B) containing two or more phenolic hydroxyl groups. % By weight or more, more preferably 30% by weight or more, and particularly preferably 50% by weight or more. When the compounding ratio of the compound represented by the general formula (2) is within the above range, an effect of improving the flame resistance can be obtained.

  The blending ratio between the total amount of the epoxy resin used in the present invention and the total amount of the compound containing two or more phenolic hydroxyl groups is the number of epoxy groups (EP) of the epoxy resin and the number of phenolic hydroxyl groups of the compound containing two or more phenolic hydroxyl groups. The ratio (EP / OH) to (OH) is preferably 0.6 or more and 1.5 or less, and more preferably 0.8 or more and 1.3 or less. When the equivalent ratio is within the above range, there is little possibility that the curability of the epoxy resin composition is lowered. Further, when the equivalent ratio is within the above range, the cured product of the epoxy resin composition is less likely to cause a decrease in glass transition temperature, a decrease in moisture resistance reliability, and the like.

  As the inorganic filler (C) used in the present invention, those generally used in a resin composition for semiconductor encapsulation can be used. For example, fused silica, spherical silica, crystalline silica, alumina, silicon nitride And aluminum nitride. The particle size of the inorganic filler (C) is preferably 0.01 μm or more and 150 μm or less in consideration of the filling property to the mold. Further, the content of the inorganic filler (C) is preferably 80% by weight or more and 92% by weight or less, more preferably 82% by weight or more and 91% by weight or less, and particularly preferably 84% by weight of the entire epoxy resin composition. % To 90% by weight. When the content of the inorganic filler (C) is within the above range, the amount of water absorption of the cured product of the epoxy resin composition increases and there is little possibility of causing a decrease in solder resistance due to a decrease in strength. Further, when the content of the inorganic filler (C) is within the above range, there is little possibility of causing defects on the molding surface due to the loss of fluidity.

  The curing accelerator (D) used in the present invention is not limited as long as it promotes the reaction between the epoxy group of the epoxy resin and the phenolic hydroxyl group of the compound containing two or more phenolic hydroxyl groups. What is used for the epoxy resin composition can be utilized. Specific examples include organic phosphines, tetra-substituted phosphonium compounds, phosphobetaine compounds, phosphorus atom-containing compounds such as adducts of phosphine compounds and quinone compounds, 1,8-diazabicyclo (5,4,0) undecene-7, benzyl Nitrogen atom-containing compounds such as dimethylamine and 2-methylimidazole can be mentioned. Among these, a phosphorus atom-containing compound is preferable, and a tetra-substituted phosphonium compound is particularly preferable in consideration of fluidity, and a phosphobetaine compound and a phosphine compound in consideration of a low elastic modulus when cured of an epoxy resin composition. An adduct of quinone compound and a quinone compound is preferable, and an adduct of a phosphonium compound and a silane compound is preferable in consideration of latent curing property.

  Examples of the organic phosphine include a first phosphine such as ethylphosphine and phenylphosphine, a second phosphine such as dimethylphosphine and diphenylphosphine, and a third phosphine such as trimethylphosphine, triethylphosphine, tributylphosphine, and triphenylphosphine.

  Examples of the tetra-substituted phosphonium compound include compounds represented by the following general formula (5).

（ただし、上記一般式（５）において、Ｐはリン原子を表す。Ｒ６、Ｒ７、Ｒ８及びＲ９は芳香族基、又はアルキル基を表す。Ａはヒドロキシル基、カルボキシル基、チオール基から選ばれる官能基のいずれかを芳香環に少なくとも１つ有する芳香族有機酸のアニオンを表す。ＡＨはヒドロキシル基、カルボキシル基、チオール基から選ばれる官能基のいずれかを芳香環に少なくとも１つ有する芳香族有機酸を表す。ａ、ｂは１ないし３の整数、ｃは０ないし３の整数であり、かつａ＝ｂである。）

(However, in the said General formula (5), P represents a phosphorus atom. R6, R7, R8, and R9 represent an aromatic group or an alkyl group. A is a function chosen from a hydroxyl group, a carboxyl group, and a thiol group. An anion of an aromatic organic acid having at least one of the groups in the aromatic ring AH represents an aromatic organic having at least one functional group selected from a hydroxyl group, a carboxyl group, and a thiol group in the aromatic ring. Represents an acid, a and b are integers of 1 to 3, c is an integer of 0 to 3, and a = b.

  The compound represented by the general formula (5) is obtained as follows, for example, but is not limited thereto. First, a tetra-substituted phosphonium halide, an aromatic organic acid and a base are mixed in an organic solvent and mixed uniformly to generate an aromatic organic acid anion in the solution system. Subsequently, when water is added, the compound represented by the general formula (5) can be precipitated. In the compound represented by the general formula (5), R6, R7, R8 and R9 bonded to the phosphorus atom are phenyl groups, and AH is a compound having a hydroxyl group in an aromatic ring, that is, phenols, and A is preferably an anion of the phenol.

（ただし、上記一般式（６）において、Ｐはリン原子を表す。Ｘ１は水素又は炭素数１ないし３のアルキル基、Ｙ１は水素又はヒドロキシル基を表す。ｍ６、ｎ６は１ないし３の整数。） Examples of the phosphobetaine compound include compounds represented by the following general formula (6).

(However, in the said General formula (6), P represents a phosphorus atom. X1 represents hydrogen or a C1-C3 alkyl group, Y1 represents hydrogen or a hydroxyl group. M6 and n6 are integers of 1-3. )

  The compound represented by the general formula (6) is obtained, for example, as follows. First, it is obtained through a step of bringing a triaromatic substituted phosphine, which is a third phosphine, into contact with a diazonium salt and replacing the triaromatic substituted phosphine with a diazonium group of the diazonium salt. However, the present invention is not limited to this.

（ただし、上記一般式（７）において、Ｐはリン原子を表す。Ｒ１０、Ｒ１１及びＲ１２は炭素数１ないし１２のアルキル基又は炭素数６ないし１２のアリール基を表し、互いに同一であっても異なっていてもよい。Ｒ１３、Ｒ１４及びＲ１５は水素原子又は炭素数１ないし１２の炭化水素基を表し、互いに同一であっても異なっていてもよく、Ｒ１３とＲ１４が結合して環状構造となっていてもよい。） Examples of the adduct of the phosphine compound and the quinone compound include a compound represented by the following general formula (7).

(In the above general formula (7), P represents a phosphorus atom. R10, R11 and R12 represent an alkyl group having 1 to 12 carbon atoms or an aryl group having 6 to 12 carbon atoms, and may be the same as each other). R13, R14 and R15 each represents a hydrogen atom or a hydrocarbon group having 1 to 12 carbon atoms and may be the same or different from each other, and R13 and R14 are bonded to form a cyclic structure. May be.)

Examples of the phosphine compound used for the adduct of the phosphine compound and the quinone compound include triphenylphosphine, tris (alkylphenyl) phosphine, tris (alkoxyphenyl) phosphine, trinaphthylphosphine, and tris (benzyl) phosphine. Those having a substituent or a substituent such as an alkyl group or an alkoxyl group are preferred, and examples of the organic group of the alkyl group and the alkoxyl group include those having 1 to 6 carbon atoms. From the viewpoint of availability, triphenylphosphine is preferable.
Examples of the quinone compound used for the adduct of the phosphine compound and the quinone compound include o-benzoquinone, p-benzoquinone, and anthraquinones. Among them, p-benzoquinone is preferable from the viewpoint of storage stability.
As a method for producing the adduct of the phosphine compound and the quinone compound, the adduct can be obtained by contacting and mixing in a solvent in which both the organic tertiary phosphine and the benzoquinone can be dissolved. The solvent is preferably a ketone such as acetone or methyl ethyl ketone, which has low solubility in the adduct. However, the present invention is not limited to this.
In the compound represented by the general formula (7), R10, R11 and R12 bonded to the phosphorus atom are phenyl groups, and R13, R14 and R15 are hydrogen atoms, that is, 1,4-benzoquinone and tri A compound to which phenylphosphine is added is preferable in that the elastic modulus of the cured epoxy resin composition when heated is lowered.

（ただし、上記一般式（８）において、Ａ１は窒素原子又はリン原子を表す。Ｓｉは珪素原子を表す。Ｒ１６、Ｒ１７、Ｒ１８及びＲ１９は、それぞれ、芳香環又は複素環を有する有機基、或いは脂肪族基を表し、互いに同一であっても異なっていてもよい。Ｘ２は、基Ｙ２及びＹ３と結合する有機基である。Ｘ３は、基Ｙ４及びＹ５と結合する有機基である。Ｙ２及びＹ３は、プロトン供与性置換基がプロトンを放出してなる基であり、それらは互いに同一であっても異なっていてもよく、同一分子内の基Ｙ２、及びＹ３が珪素原子と結合してキレート構造を形成するものである。Ｙ４及びＹ５は、プロトン供与性置換基がプロトンを放出してなる基であり、同一分子内の基Ｙ４及びＹ５が珪素原子と結合してキレート構造を形成するものである。Ｘ２、及びＸ３は互いに同一であっても異なっていてもよく、Ｙ２、Ｙ３、Ｙ４、及びＹ５は互いに同一であっても異なっていてもよい。Ｚ１は芳香環又は複素環を有する有機基或いは脂肪族基を表す。） Examples of the adduct of the phosphonium compound and the silane compound include compounds represented by the following general formula (8).

(In the above general formula (8), A1 represents a nitrogen atom or a phosphorus atom. Si represents a silicon atom. R16, R17, R18 and R19 are each an organic group having an aromatic ring or a heterocyclic ring, or Represents an aliphatic group, which may be the same or different from each other, X2 represents an organic group bonded to the groups Y2 and Y3, and X3 represents an organic group bonded to the groups Y4 and Y5. Y3 is a group formed by releasing a proton from a proton-donating substituent, which may be the same or different from each other, and the groups Y2 and Y3 in the same molecule are bonded to a silicon atom to form a chelate. Y4 and Y5 are groups formed by proton-donating substituents releasing protons, and groups Y4 and Y5 in the same molecule are combined with a silicon atom to form a chelate structure. X2 and X3 may be the same or different from each other, and Y2, Y3, Y4 and Y5 may be the same or different from each other, and Z1 is an organic having an aromatic ring or a heterocyclic ring. Represents a group or an aliphatic group.)

In the general formula (8), examples of R16, R17, R18, and R19 include phenyl group, methylphenyl group, methoxyphenyl group, hydroxyphenyl group, naphthyl group, hydroxynaphthyl group, benzyl group, methyl group, and ethyl group. , N-butyl group, n-octyl group, cyclohexyl group and the like, among these, an aromatic group having a substituent such as phenyl group, methylphenyl group, methoxyphenyl group, hydroxyphenyl group, hydroxynaphthyl group, or the like An unsubstituted aromatic group is more preferable.
Moreover, in the said General formula (8), X2 is an organic group couple | bonded with Y2 and Y3. Similarly, X3 is an organic group bonded to the groups Y4 and Y5. Y2 and Y3 are groups formed by proton-donating substituents releasing protons, and groups Y2 and Y3 in the same molecule are bonded to a silicon atom to form a chelate structure. Similarly, Y4 and Y5 are groups formed by proton-donating substituents releasing protons, and groups Y4 and Y5 in the same molecule are combined with a silicon atom to form a chelate structure. The groups X2 and X3 may be the same or different from each other, and the groups Y2, Y3, Y4, and Y5 may be the same or different from each other.
Such groups represented by -Y2-X2-Y3- and -Y4-X3-Y5- in the general formula (8) are constituted by a group in which a proton donor releases two protons. Examples of proton donors include catechol, pyrogallol, 1,2-dihydroxynaphthalene, 2,3-dihydroxynaphthalene, 2,2′-biphenol, 1,1′-bi-2-naphthol, Salicylic acid, 1-hydroxy-2-naphthoic acid, 3-hydroxy-2-naphthoic acid, chloranilic acid, tannic acid, 2-hydroxybenzyl alcohol, 1,2-cyclohexanediol, 1,2-propanediol, glycerin, etc. Among these, catechol, 1,2-dihydroxynaphthalene, and 2,3-dihydroxynaphthalene are more preferable.

  Z1 in the general formula (8) represents an organic group or an aliphatic group having an aromatic ring or a heterocyclic ring. Specific examples thereof include a methyl group, an ethyl group, a propyl group, a butyl group, and a hexyl group. Reactions of aliphatic hydrocarbon groups such as octyl and octyl groups, aromatic hydrocarbon groups such as phenyl, benzyl, naphthyl and biphenyl, glycidyloxypropyl, mercaptopropyl, aminopropyl and vinyl Among them, a methyl group, an ethyl group, a phenyl group, a naphthyl group, and a biphenyl group are more preferable from the viewpoint of thermal stability.

  As a method for producing an adduct of the phosphonium compound and the silane compound, a silane compound such as phenyltrimethoxysilane and a bivalent or higher proton donor such as 2,3-dihydroxynaphthalene are added to a flask containing methanol. Then, sodium methoxide-methanol solution is added dropwise with stirring at room temperature. Furthermore, when a solution prepared by dissolving a tetra-substituted phosphonium halide such as tetraphenylphosphonium bromide in methanol in methanol is added dropwise with stirring at room temperature, crystals are precipitated. The precipitated crystals are filtered, washed with water, and vacuum dried to obtain an adduct of a phosphonium compound and a silane compound. However, it is not limited to this.

  As for the compounding quantity of the hardening accelerator (D) used for this invention, 0.1 to 1 weight% is preferable in all the epoxy resin compositions. There is little possibility of causing curability fall that the compounding quantity of a hardening accelerator (D) exists in the said range. Moreover, there is little possibility of causing a fluid fall as the compounding quantity of a hardening accelerator (D) exists in the said range.

  The silane coupling agent (E) that can be used in the present invention is preferably epoxy silane, amino silane, ureido silane, mercapto silane, etc., but is not particularly limited thereto, and reacts between the epoxy resin and the inorganic filler. Any material that improves the interface strength between the epoxy resin and the inorganic filler may be used. Further, the compound (F) (hereinafter also referred to as “compound (F)”) in which a hydroxyl group is bonded to each of two or more adjacent carbon atoms constituting an aromatic ring described later is the silane coupling agent (E). Therefore, the silane coupling agent (E) is also effective for obtaining the effect of the compound (F) sufficiently because it has the effect of lowering the viscosity of the epoxy resin composition and improving the fluidity. Examples of the epoxy silane include γ-glycidoxypropyltriethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, β- (3,4 epoxycyclohexyl) ethyltrimethoxysilane. Examples of aminosilanes include γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, and N-β (aminoethyl) γ. -Aminopropylmethyldimethoxysilane, N-phenylγ-aminopropyltriethoxysilane, N-phenylγ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltriethoxysilane, N-6- (amino (Hexyl) 3-aminopropyl Examples include trimethoxysilane and N- (3- (trimethoxysilylpropyl) -1,3-benzenedimethanane. Examples of ureidosilane include γ-ureidopropyltriethoxysilane and hexamethyldisilazane. Examples of the mercaptosilane include γ-mercaptopropyltrimethoxysilane, etc. These silane coupling agents (E) may be used alone or in combination of two or more. The amount of the silane coupling agent (E) that can be used in the present invention is preferably 0.01% by weight or more and 1% by weight or less, more preferably 0.05% by weight or more, 0% in the total epoxy resin composition. 0.8 wt% or less, particularly preferably 0.1 wt% or more and 0.6 wt% or less, and the blending amount of the silane coupling agent (E) is in the above range. When the content of the silane coupling agent (E) is within the range, a sufficient viscosity reduction and fluidity improvement effect of the epoxy resin composition can be obtained due to a synergistic effect with the compound (F). If it is within the range, there is little risk of causing a decrease in solder resistance in the semiconductor device due to a decrease in the interface strength between the epoxy resin and the inorganic filler, and the amount of the silane coupling agent (E) is within the above range. If it is inside, there is little possibility of causing the fall of solder resistance by the water absorption of the hardened | cured material of an epoxy resin composition increasing.

  A compound (F) (hereinafter also referred to as “compound (F)”) in which a hydroxyl group is bonded to each of two or more adjacent carbon atoms constituting an aromatic ring that can be used in the present invention is used. It has the effect of lowering the melt viscosity of the epoxy resin composition and improving fluidity. As the compound (F), a monocyclic compound represented by the following general formula (10) or a polycyclic compound represented by the following general formula (11) can be used. It may have a substituent.

（ただし、上記一般式（１０）において、Ｒ２０、Ｒ２４はどちらか一方が水酸基であり、片方が水酸基のとき他方は水素、水酸基又は水酸基以外の置換基である。Ｒ２１、Ｒ２２、及びＲ２３は水素、水酸基又は水酸基以外の置換基である。）

(However, in the general formula (10), one of R20 and R24 is a hydroxyl group, and when one is a hydroxyl group, the other is hydrogen, a hydroxyl group or a substituent other than a hydroxyl group. R21, R22, and R23 are hydrogen. , A hydroxyl group or a substituent other than a hydroxyl group.)

（ただし、上記一般式（１１）において、Ｒ２５、Ｒ３１はどちらか一方が水酸基であり、片方が水酸基のとき他方は水素、水酸基又は水酸基以外の置換基である。Ｒ２６、Ｒ２７、Ｒ２８、Ｒ２９、及びＲ３０は水素、水酸基又は水酸基以外の置換基である。）

(However, in the general formula (11), one of R25 and R31 is a hydroxyl group, and when one is a hydroxyl group, the other is hydrogen, a hydroxyl group or a substituent other than a hydroxyl group. R26, R27, R28, R29, And R30 is hydrogen, a hydroxyl group or a substituent other than a hydroxyl group.)

  Specific examples of the monocyclic compound represented by the general formula (10) include catechol, pyrogallol, gallic acid, gallic acid ester, and derivatives thereof. Specific examples of the polycyclic compound represented by the general formula (11) include 1,2-dihydroxynaphthalene, 2,3-dihydroxynaphthalene, and derivatives thereof. Among these, a compound in which a hydroxyl group is bonded to each of two adjacent carbon atoms constituting an aromatic ring is preferable because of easy control of fluidity and curability. In consideration of volatilization in the kneading step, it is more preferable that the mother nucleus is a compound having a low volatility and a highly stable weighing naphthalene ring. In this case, specifically, the compound (F) can be a compound having a naphthalene ring such as 1,2-dihydroxynaphthalene, 2,3-dihydroxynaphthalene and derivatives thereof. These compounds (F) may be used individually by 1 type, or may use 2 or more types together.

  The compounding amount of the compound (F) is preferably 0.01% by weight or more and 1% by weight or less, more preferably 0.03% by weight or more and 0.8% by weight or less in the total epoxy resin composition. Particularly preferably, it is 0.05% by weight or more and 0.5% by weight or less. When the compounding amount of the compound (F) is within the above range, a sufficient viscosity reduction and fluidity improvement effect of the epoxy resin composition can be obtained due to a synergistic effect with the silane coupling agent (E). Moreover, there is little possibility of causing the fall of sclerosis | hardenability of an epoxy resin composition, and the fall of physical property of hardened | cured material as the compounding quantity of a compound (F) is in the said range.

  The epoxy resin composition of the present invention has the components (A) to (F) as main components, but in addition to this, natural wax such as carnauba wax, synthetic wax such as polyethylene wax, stearic acid, Release agents such as higher fatty acids such as zinc stearate and its metal salts or paraffin; Colorants such as carbon black and Bengala; Low stress additives such as silicone oil and silicone rubber; Inorganic ion exchange such as bismuth oxide hydrate An additive such as a metal hydroxide such as aluminum hydroxide and magnesium hydroxide, a flame retardant such as zinc borate, zinc molybdate, and phosphazene may be appropriately blended.

  The resin composition for semiconductor encapsulation of the present invention is obtained by mixing the components (A) to (F) and other additives uniformly at room temperature using, for example, a mixer, and then heating roll, kneader Or what knead | mixed and kneaded using kneading machines, such as an extruder, and cooled and grind | pulverized subsequently, etc., what adjusted dispersion degree, fluidity | liquidity, etc. suitably can be used as needed.

  To manufacture a semiconductor device by sealing a semiconductor element with a cured product of the epoxy resin composition of the present invention, for example, after installing a lead frame or the like on which the semiconductor element is mounted in a mold cavity, the epoxy resin composition What is necessary is just to shape-harden a thing with shaping | molding methods, such as a transfer mold, a compression mold, and an injection mold.

The semiconductor element that performs sealing in the present invention is not particularly limited, and examples thereof include an integrated circuit, a large-scale integrated circuit, a transistor, a thyristor, a diode, and a solid-state imaging element.
The form of the semiconductor device of the present invention is not particularly limited. For example, the dual in-line package (DIP), the plastic lead chip carrier (PLCC), the quad flat package (QFP), the small outline, and the like. Package (SOP), Small Outline J Lead Package (SOJ), Thin Small Outline Package (TSOP), Thin Quad Flat Package (TQFP), Tape Carrier Package (TCP), Ball Grid Examples include an array (BGA), a chip size package (CSP), and the like.
A semiconductor device sealed by a molding method such as the above transfer mold is mounted on an electronic device or the like as it is or after being completely cured at a temperature of about 80 ° C. to 200 ° C. for about 10 minutes to 10 hours. Is done.

  FIG. 1 is a view showing a cross-sectional structure of an example of a semiconductor device using the epoxy resin composition according to the present invention. The semiconductor element 1 is fixed on the die pad 3 via the die bond material cured body 2. The electrode pad of the semiconductor element 1 and the lead frame 5 are connected by a gold wire 4. The semiconductor element 1 is sealed with a cured body 6 of a sealing resin composition.

  FIG. 2 is a diagram showing a cross-sectional structure of an example of a single-side sealed semiconductor device using the epoxy resin composition according to the present invention. The semiconductor element 1 is fixed on the substrate 8 through the die bond material cured body 2. The electrode pad of the semiconductor element 1 and the electrode pad on the substrate 8 are connected by a gold wire 4. Only the single side | surface side in which the semiconductor element 1 of the board | substrate 8 was mounted is sealed by the hardening body 6 of the resin composition for sealing. The electrode pads on the substrate 8 are bonded to the solder balls 9 on the non-sealing surface side on the substrate 8 inside.

EXAMPLES Hereinafter, although this invention is demonstrated concretely in an Example, this invention is not limited at all by these Examples. The blending ratio is parts by weight.
<Evaluation of encapsulant for lead frame>
Example 1

Epoxy resin 1: Epoxy resin represented by the following formula (9) (Dai Nippon Ink Chemical Co., Ltd., EXA-7310. Epoxy equivalent 240, softening point 55 ° C. In the following formula (9), n9 is 0-5. An integer, the average value is 1.2.) 6.94 parts by weight

溶融球状シリカ（平均粒径３０μｍ） ８６．００重量部
硬化促進剤１：トリフェニルホスフィン ０．２０重量部
シランカップリング剤１：γ−グリシドキシプロピルトリメトキシシラン
０．３０重量部
２，３−ジヒドロキシナフタレン ０．２０重量部
カルナバワックス ０．２０重量部
カーボンブラック ０．３０重量部
をミキサーにて常温混合し、８０℃以上、１００℃以下の加熱ロールで溶融混練し、冷却後粉砕し、エポキシ樹脂組成物を得た。得られたエポキシ樹脂組成物を用いて以下の方法で評価した。評価結果を表１に示す。 Curing agent 1: Compound represented by the following formula (12) (Maywa Kasei Co., Ltd., MEH-7851SS. Hydroxyl equivalent: 203, softening point: 66 ° C. In the general formula (2): -R2-: biphenylene group, -R3 (OH) -: Hydroxyphenylene group, k2: 0, m2: 0, average value of n12 in the following formula (12): 1.5.) 5.86 parts by weight

Fused spherical silica (average particle size 30 μm) 86.00 parts by weight Curing accelerator 1: 0.20 parts by weight of triphenylphosphine Silane coupling agent 1: γ-glycidoxypropyltrimethoxysilane
0.30 parts by weight 2,3-dihydroxynaphthalene 0.20 parts by weight Carnauba wax 0.20 parts by weight Carbon black 0.30 parts by weight is mixed at room temperature with a mixer and melted with a heating roll at 80 ° C. or higher and 100 ° C. or lower. The mixture was kneaded, cooled and pulverized to obtain an epoxy resin composition. It evaluated by the following method using the obtained epoxy resin composition. The evaluation results are shown in Table 1.

-Spiral flow: Using a low-pressure transfer molding machine (KTS-15, manufactured by Kotaki Seiki Co., Ltd.), a mold for spiral flow measurement conforming to EMMI-1-66, mold temperature 175 ° C, injection pressure 6.9 MPa The epoxy resin composition was injected under the condition of a holding time of 120 seconds, and the flow length was measured. The spiral flow is a fluidity parameter, and the larger the value, the better the fluidity. The unit is cm.

-Moisture absorption rate: An epoxy resin composition is injection-molded using a low-pressure transfer molding machine (KTS-30, manufactured by Kotaki Seiki Co., Ltd.) at a mold temperature of 175 ° C, an injection pressure of 7.4 MP, and a curing time of 120 seconds. A test piece having a diameter of 50 mm and a thickness of 3 mm was prepared and post-cured at 175 ° C. for 8 hours. Thereafter, the obtained test piece was humidified for 168 hours in an environment of 85 ° C. and a relative humidity of 85 ° C., and the weight change before and after the humidification treatment was measured to obtain the moisture absorption rate. The unit is% by weight.

Flame resistance: Epoxy resin using a low-pressure transfer molding machine (KTS-30, KTS-30) under conditions of a mold temperature of 175 ° C., an injection pressure of 9.8 MPa, an injection time of 15 seconds, and a curing time of 120 seconds. The composition was injection molded to produce a 3.2 mm thick flame resistant test piece. Using the prepared test piece, a flame resistance test was performed in accordance with the standard of the UL94 vertical method to determine the flame resistance. The table shows the fire resistance rank after the determination.

Solder resistance 1: An epoxy resin composition was injected using a low-pressure transfer molding machine (Daiichi Seiko, GP-ELF) under conditions of a mold temperature of 180 ° C., an injection pressure of 7.4 MPa, and a curing time of 120 seconds. Then, the lead frame on which the silicon chip is mounted is sealed and molded, and an 80-pin quad flat package (80pQFP; Cu lead frame, package size is 14 × 20mm × thickness 2.0mm, silicon chip size is 7 × 7 mm × thickness 0.35 mm, and the bonding pad of the chip and the circuit board is bonded with a gold wire with a diameter of 25 μm). Six packages heat treated at 175 ° C. for 4 hours as post-cure were humidified for 168 hours at 85 ° C. and 60% relative humidity, and then IR reflow treatment (260 ° C., according to JEDEC / Le1el2 conditions) was performed. The inside of the package after the treatment and the presence or absence of cracks were observed with an ultrasonic scratcher (manufactured by Hitachi Construction Machinery Finetech, mi-scope 10), and any one of the peeling or cracking was regarded as defective. When the number of defective packages is n, n / 6 is displayed.

Glass transition temperature (Tg): Epoxy resin composition using a low-pressure transfer molding machine (KTS-30, manufactured by Kotaki Seiki Co., Ltd.) under conditions of a mold temperature of 175 ° C., an injection pressure of 6.9 MPa, and a curing time of 120 seconds. A test piece (width 2 mm × length 30 mm × thickness 1.0 mm) was prepared by injection molding, and post-cured at 175 ° C. for 4 hours. For the measurement, a dynamic viscoelasticity measurement device (Orientec Co., Ltd., RHEOVIVRON DDV-25FP) is used to measure the dynamic viscoelasticity by applying a strain of a frequency of 10 Hz while raising the temperature at a rate of 5 ° C / min. The glass transition temperature (Tg) was determined from the peak value of tan δ.

-High temperature storage characteristics: TEG chip (chip size: 3.5 x 3.5 mm) with aluminum pad formed is bonded to a lead frame for 42 alloy 16-pin small outline package (16pSOP). Prepare a TEG chip mounting lead frame in which the pad and the lead frame are wire-bonded to form a daisy chain in which the circuit and the wire are connected by a single wire, and a low-pressure transfer molding machine (KTS, manufactured by Kotaki Seiki Co., Ltd.) -125), the TEG chip mounted lead frame was encapsulated with an epoxy resin composition under conditions of a mold temperature of 175 ° C., an injection pressure of 9.8 MPa, and a curing time of 120 seconds to prepare a test package. . The resulting package was post-cured at 175 ° C. for 8 hours, and then subjected to a high-temperature storage test (185 ° C., no voltage applied), and the electrical resistance value between the wirings increased by 20% or more relative to the initial value. Was determined to be defective, and the time until failure was measured. The measurement interval of electrical resistance between wiring is once a week. The defective time is an average value of n = 4 pieces. The unit is time.

Examples 2 to 17, Comparative Examples 1 to 3
According to the composition of Tables 1 and 2, an epoxy resin composition was produced in the same manner as in Example 1, and evaluated in the same manner as in Example 1. The evaluation results are shown in Tables 1 and 2.
Components used in Examples other than Example 1 are shown below.
Epoxy resin 2: phenol aralkyl type epoxy resin having a biphenylene skeleton (manufactured by Nippon Kayaku Co., Ltd., NC-3000, epoxy equivalent 274, softening point 58 ° C.)
Epoxy resin 3: cresol novolac type epoxy resin (epoxy equivalent 196, softening point 60 ° C.)
Epoxy resin 4: Biphenyl type crystalline epoxy resin (manufactured by Japan Epoxy Resin Co., Ltd., YX4000K. Epoxy equivalent 185, melting point 105 ° C.)
Curing agent 3: Phenol aralkyl resin having a phenylene skeleton (Mitsui Chemical Co., Ltd., XLC-4L. Hydroxyl equivalent 165, softening point 65 ° C. In the general formula (2) -R2-: phenylene group, -R3 (OH)- : Hydroxyphenylene group, k2: 0, m2: 0, average value of n2: 3.5.)
Curing agent 4: Phenol novolac resin (manufactured by Sumitomo Bakelite, PR-HF-3, hydroxyl equivalent 104, softening point 80 ° C.)
Curing accelerator 2: 1,8-diazabicyclo (5,4,0) undecene-7
Curing accelerator 3: Curing accelerator represented by the following formula (13)

硬化促進剤４：下記式（１４）で表される硬化促進剤

Curing accelerator 4: Curing accelerator represented by the following formula (14)

硬化促進剤５：下記式（１５）で表される硬化促進剤

Curing accelerator 5: Curing accelerator represented by the following formula (15)

Curing accelerator 6: Curing accelerator represented by the following formula (16)

Silane coupling agent 2: γ-mercaptopropyltrimethoxysilane 1,2-dihydroxynaphthalene catechol pyrogallol

  In Examples 1 to 17, the epoxy resin (A) represented by the general formula (1) is used as an epoxy resin, the compounding ratio of the epoxy resin (A), a compound containing two or more phenolic hydroxyl groups ( B) type and mixing ratio, inorganic filler (C) mixing ratio, curing accelerator (D) type, silane coupling agent (E) type and mixing ratio, and two or more constituting the aromatic ring These include compounds with different types and blending ratios of compounds (F) in which hydroxyl groups are bonded to adjacent carbon atoms, all of which have good fluidity (spiral flow), moisture absorption, flame resistance and solder resistance. As shown, high Tg and good high temperature storage characteristics were obtained.

On the other hand, in Comparative Example 1 using a cresol novolac type epoxy resin as an epoxy resin and a phenol novolac resin as a compound (B) containing two or more phenolic hydroxyl groups, high Tg and good high temperature storage characteristics were obtained. As a result, the moisture absorption rate, flame resistance and solder resistance were inferior. In Comparative Example 2, which differs from Example 1 only in that a phenol aralkyl type epoxy resin having a biphenylene skeleton was used as an epoxy resin, although good results were obtained in moisture absorption, flame resistance and solder resistance, Compared to Example 1, Tg was low, and the high-temperature storage characteristics were inferior. Furthermore, in Comparative Example 3 using a low-viscosity crystalline biphenyl type epoxy resin as the epoxy resin and a phenol aralkyl resin as the compound (B) containing two or more phenolic hydroxyl groups, the epoxy resin composition has a low viscosity. Therefore, it is possible to add a large amount of inorganic filler, and hence the moisture absorption rate is low, but the Tg is low, the high temperature storage characteristics are inferior, and the flame resistance and solder resistance are insufficient. It was.
From the above results, it was found that Examples 1 to 17 had excellent flame resistance and solder resistance, high Tg, and good high-temperature storage characteristics.

<Evaluation of sealing material for BGA>
Example 18
Epoxy resin 1: Epoxy resin represented by the following formula (9) (Dai Nippon Ink Chemical Co., Ltd., EXA-7310. Epoxy equivalent 240, softening point 55 ° C. Average value of n9 in the following formula (9): 1 .2.)
6.83 parts by weight

Curing agent 2: Compound represented by the following formula (17) (manufactured by Nippon Steel Chemical Co., Ltd., SN-485. Hydroxyl equivalent: 210, softening point: 85 ° C. In the general formula (2), -R2-: phenylene group, -R3 ( OH)-: 2-hydroxynaphthylene group, k2: 0, m2: 0, average value of n17 in the following formula (17): 1.5.)
5.97 parts by weight

Fused spherical silica (average particle size 30 μm) 86.00 parts by weight Curing accelerator 1: 0.20 parts by weight of triphenylphosphine Silane coupling agent 1: γ-glycidoxypropyltrimethoxysilane
0.30 parts by weight 2,3-dihydroxynaphthalene 0.20 parts by weight Carnauba wax 0.20 parts by weight Carbon black 0.30 parts by weight is mixed at room temperature with a mixer and melted with a heating roll at 80 ° C. or higher and 100 ° C. or lower. The mixture was kneaded, cooled and pulverized to obtain an epoxy resin composition. The evaluation results are shown in Table 3.

-Spiral flow: Using a low-pressure transfer molding machine (KTS-15, manufactured by Kotaki Seiki Co., Ltd.), a mold for spiral flow measurement conforming to EMMI-1-66, mold temperature 175 ° C, injection pressure 6.9 MPa The epoxy resin composition was injected under the condition of a holding time of 120 seconds, and the flow length was measured. The spiral flow is a fluidity parameter, and the larger the value, the better the fluidity. The unit is cm.

-Moisture absorption rate: An epoxy resin composition is injection-molded using a low-pressure transfer molding machine (KTS-30, manufactured by Kotaki Seiki Co., Ltd.) at a mold temperature of 175 ° C, an injection pressure of 7.4 MP, and a curing time of 120 seconds. A test piece having a diameter of 50 mm and a thickness of 3 mm was prepared and post-cured at 175 ° C. for 8 hours. Thereafter, the obtained test piece was humidified for 168 hours in an environment of 85 ° C. and a relative humidity of 85 ° C., and the weight change before and after the humidification treatment was measured to obtain the moisture absorption rate. The unit is% by weight.

Flame resistance: Epoxy resin using a low-pressure transfer molding machine (KTS-30, KTS-30) under conditions of a mold temperature of 175 ° C., an injection pressure of 9.8 MPa, an injection time of 15 seconds, and a curing time of 120 seconds. The composition was injection molded to produce a 3.2 mm thick flame resistant test piece. Using the prepared test piece, a flame resistance test was performed in accordance with the standard of the UL94 vertical method to determine the flame resistance. The table shows the fire resistance rank after the determination.

Solder resistance 2: Silicone is injected by injecting an epoxy resin composition using a low-pressure transfer molding machine (manufactured by TOWA, Y series) under conditions of a mold temperature of 180 ° C., an injection pressure of 7.4 MPa, and a curing time of 120 seconds. A circuit board on which the chip is mounted is encapsulated, and a 225-pin ball grid array (225pBGA; board is 0.36mm thick, bismaleimide triazine / glass cloth board, package size is 24x24mm, thick The silicon chip is 9 × 9 mm in size, the thickness is 0.35 mm, and the chip and the bonding pad of the circuit board are bonded with a gold wire with a diameter of 25 μm. The average gold wire length is 5 mm. . Eight packages heat treated at 175 ° C. for 8 hours as post-cure were humidified for 168 hours at 85 ° C. and 60% relative humidity, and then IR reflow treatment (260 ° C., according to JEDEC Level 2 conditions) was performed. The inside of the package after the treatment and the presence or absence of cracks were observed with an ultrasonic scratcher (manufactured by Hitachi Construction Machinery Finetech, mi-scope 10), and any one of the peeling or cracking was regarded as defective. When the number of defective packages is n, n / 8 is displayed.

-Thermal expansion amount: epoxy resin composition using a low-pressure transfer molding machine (KTS-30, KTS-30) under conditions of a mold temperature of 175 ° C, an injection pressure of 7.5 x MPa, and a curing time of 120 seconds. A test piece (4 mm × 5 mm × 15 mm) was produced by injection molding. From the chart when the obtained test piece was measured at a measurement temperature range of 0 ° C. to 320 ° C. and a temperature increase rate of 5 ° C./min using a thermomechanical analyzer (manufactured by Seiko Denshi Kogyo Co., Ltd., TMA100), 30 The amount of thermal expansion in the range from ℃ to 175 ℃ was calculated. Units%.

Package warpage amount: Using a low-pressure transfer molding machine (manufactured by TOWA, Y series), a silicon chip was mounted with an epoxy resin composition under conditions of a mold temperature of 180 ° C., an injection pressure of 7.4 MPa, and a curing time of 120 seconds. Circuit board, etc. is sealed and molded, and 225-pin ball grid array (225pBGA; board is 0.36mm thick, bismaleimide triazine / glass cloth board, package size is 24x24mm, thickness is 1.17mm The silicon chip was 9 × 9 mm in size and 0.35 mm in thickness, and the chip and the bonding pad of the circuit board were bonded with a 25 μm diameter gold wire. The obtained package was further heat treated at 175 ° C. for 8 hours as a post cure. After cooling to room temperature, the displacement in the height direction was measured using a surface roughness meter in the diagonal direction from the gate of the package, and the value with the largest displacement difference was taken as the amount of warpage. The unit is μm.

Examples 19 to 34, Comparative Examples 4 to 7
According to the composition of Table 3 and Table 4, an epoxy resin composition was produced in the same manner as in Example 18 and evaluated in the same manner as in Example 18. The evaluation results are shown in Tables 3 and 4.
Components used in Examples other than Example 18 are shown below.
Epoxy resin 2: phenol aralkyl type epoxy resin having a biphenylene skeleton (manufactured by Nippon Kayaku Co., Ltd., NC-3000, epoxy equivalent 274, softening point 58 ° C.)
Epoxy resin 4: Biphenyl type crystalline epoxy resin (manufactured by Japan Epoxy Resin Co., Ltd., YX-4000K. Epoxy equivalent 185, melting point 105 ° C.)
Epoxy resin 5: Triphenolmethane type epoxy resin (manufactured by Japan Epoxy Resin Co., Ltd., E-1032H60. Epoxy equivalent 171, softening point 60 ° C.)
Curing agent 3: Phenol aralkyl resin having a phenylene skeleton (Mitsui Chemical Co., Ltd., XLC-4L. Hydroxyl equivalent 165, softening point 65 ° C. In the general formula (2) -R2-: phenylene group, -R3 (OH)- : Hydroxyphenylene group, k2: 0, m2: 0, average value of n2: 3.4.)
Curing agent 4: Phenol novolac resin (manufactured by Sumitomo Bakelite, PR-HF-3, hydroxyl equivalent 104, softening point 80 ° C.)
Curing agent 5: Triphenolmethane type phenol resin (Maywa Kasei Co., Ltd., MEH-7500. Hydroxyl equivalent 97, softening point 110 ° C.)
Curing accelerator 2: 1,8-diazabicyclo (5,4,0) undecene-7
Curing accelerator 3: Curing accelerator represented by the following formula (13)

硬化促進剤４：下記式（１４）で表される硬化促進剤

Curing accelerator 4: Curing accelerator represented by the following formula (14)

硬化促進剤５：下記式（１５）で表される硬化促進剤

Curing accelerator 5: Curing accelerator represented by the following formula (15)

Curing accelerator 6: Curing accelerator represented by the following formula (16)

Silane coupling agent 2: γ-mercaptopropyltrimethoxysilane 1,2-dihydroxynaphthalene catechol pyrogallol

In Examples 18 to 34, the epoxy resin (A) represented by the general formula (1) was used as an epoxy resin, and the compounding ratio of the epoxy resin (A) and a compound containing two or more phenolic hydroxyl groups ( B) type and mixing ratio, inorganic filler (C) mixing ratio, curing accelerator (D) type, silane coupling agent (E) type and mixing ratio, and two or more constituting the aromatic ring These include compounds with different types and blending ratios of compounds (F) in which hydroxyl groups are bonded to adjacent carbon atoms, all of which have good fluidity (spiral flow), moisture absorption, flame resistance and solder resistance. And good results were obtained in that the amount of thermal expansion and package warpage were low.

On the other hand, in Comparative Example 4 using a triphenolmethane type epoxy resin as the epoxy resin and using a triphenolmethane type phenol resin as the compound (B) containing two or more phenolic hydroxyl groups, the thermal expansion amount and the package warpage amount are low. Although it was good, the results were poor in terms of fluidity, moisture absorption, flame resistance and solder resistance. Further, in Comparative Example 5 using a phenol aralkyl type epoxy resin having a biphenylene skeleton as an epoxy resin and using a phenol aralkyl resin having a biphenylene skeleton as a compound (B) containing two or more phenolic hydroxyl groups, the moisture absorption rate is low, Although high flame resistance and good solder resistance were obtained, the thermal expansion amount and package warpage amount were inferior. Furthermore, in Comparative Example 6 using a low-viscosity crystalline biphenyl type epoxy resin as an epoxy resin and a phenol aralkyl resin as a compound (B) containing two or more phenolic hydroxyl groups, the epoxy resin composition has a low viscosity. Therefore, a large amount of inorganic filler can be blended, and therefore the thermal expansion amount is low and the package warpage amount is good to some extent, but the flame resistance is low and the solder resistance is poor. Furthermore, Comparative Example 7, which differs from Example 18 only in that a triphenolmethane type epoxy resin was used as the epoxy resin, was good in terms of moisture absorption, flame resistance and resistance, although the amount of thermal expansion and package warpage were low and good. The result was inferior in terms of solderability.
From the above results, it was found that Examples 18 to 34 were excellent in flame resistance and solder resistance, had a low thermal expansion amount, and had a good package warpage.

  According to the present invention, an epoxy resin composition for semiconductor encapsulation having excellent solder resistance and flame resistance and excellent high-temperature storage characteristics or low warpage can be obtained. is there. From the viewpoint of excellent low warpage, it is also suitable for an area surface mount type semiconductor device package.

It is the figure which showed the cross-section about an example of the semiconductor device using the epoxy resin composition which concerns on this invention. It is the figure which showed the cross-section about an example of the single-side sealing type semiconductor device using the epoxy resin composition which concerns on this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 Die-bonding material hardening body 3 Die pad 4 Gold wire 5 Lead frame 6 Curing body of the resin composition for sealing 7 Resist 8 Substrate 9 Solder ball

Claims (15)

An epoxy resin (A) represented by the following general formula (1);
A compound (B) containing two or more phenolic hydroxyl groups;
An inorganic filler (C);
A curing accelerator (D);
A resin composition for encapsulating a semiconductor, comprising:

(However, in the above general formula (1), R1 is a hydrocarbon group having 1 to 20 carbon atoms and may be the same or different. OG is a glycidyl ether group. Bond of OG and R1 The position may be on the aromatic ring side to which —O— is bonded or on the other aromatic ring side, n1 is an integer of 0 to 5, and the overall average value is larger than 0 and smaller than 5. (M1 is an integer from 0 to 6, and k1 is 1 or 2) 2. The semiconductor sealing resin composition according to claim 1, wherein the compound (B) containing two or more phenolic hydroxyl groups contains a compound represented by the following general formula (2). Resin composition.

(In the general formula (2), -R2- is a phenylene group, a biphenylene group, or a naphthylene group. -R3 (OH)-is a hydroxyphenylene group, a 1-hydroxynaphthylene group, or a 2-hydroxynaphthylene group. R4 and R5 are groups introduced into R3 and R2, respectively, and are hydrocarbon groups having 1 to 10 carbon atoms, which may be the same or different from each other. A positive number of 1 or more and 10 or less, k2 is an integer of 0 to 5, and m2 is an integer of 0 to 8.) The resin composition for semiconductor encapsulation according to claim 1 or 2, wherein the compound (B) containing two or more phenolic hydroxyl groups contains a compound represented by the following general formula (3). Resin composition for stopping.

(However, in the general formula (3), R4 and R5 are hydrocarbon groups having 1 to 10 carbon atoms, and they may be the same or different. The average value of n3 is 1 or more, A positive number of 10 or less, k3 is an integer of 0 to 3, and m3 is an integer of 0 to 4.) The resin composition for semiconductor encapsulation according to claim 1 or 2, wherein the compound (B) containing two or more phenolic hydroxyl groups contains a compound represented by the following general formula (4). Resin composition for stopping.

(However, in the general formula (4), R4 and R5 are hydrocarbon groups having 1 to 10 carbon atoms, and they may be the same or different. The average value of n4 is 1 or more. A positive number of 10 or less, k4 is an integer of 0 to 5, and m4 is an integer of 0 to 4.) In the resin composition for semiconductor sealing in any one of Claims 1 thru | or 4, the said hardening accelerator (D) is a compound represented by following General formula (5), and following General formula (6) A resin composition for encapsulating a semiconductor, which is at least one selected from a compound represented by the following formula, a compound represented by the following general formula (7), and a compound represented by the following general formula (8).

(However, in the said General formula (5), P represents a phosphorus atom. R6, R7, R8, and R9 represent an aromatic group or an alkyl group. A is a function chosen from a hydroxyl group, a carboxyl group, and a thiol group. An anion of an aromatic organic acid having at least one of the groups in the aromatic ring AH represents an aromatic organic having at least one functional group selected from a hydroxyl group, a carboxyl group, and a thiol group in the aromatic ring. Represents an acid, a and b are integers of 1 to 3, c is an integer of 0 to 3, and a = b.

(However, in the said General formula (6), P represents a phosphorus atom. X1 represents hydrogen or a C1-C3 alkyl group, Y1 represents hydrogen or a hydroxyl group. M6 and n6 are integers of 1-3. )

(In the above general formula (7), P represents a phosphorus atom. R10, R11 and R12 represent an alkyl group having 1 to 12 carbon atoms or an aryl group having 6 to 12 carbon atoms, and may be the same as each other). R13, R14 and R15 each represents a hydrogen atom or a hydrocarbon group having 1 to 12 carbon atoms and may be the same or different from each other, and R13 and R14 are bonded to form a cyclic structure. May be.)

(In the above general formula (8), A1 represents a nitrogen atom or a phosphorus atom. Si represents a silicon atom. R16, R17, R18 and R19 are each an organic group having an aromatic ring or a heterocyclic ring, or Represents an aliphatic group, which may be the same or different from each other, X2 represents an organic group bonded to the groups Y2 and Y3, and X3 represents an organic group bonded to the groups Y4 and Y5. Y3 is a group formed by releasing a proton from a proton-donating substituent, which may be the same or different from each other, and the groups Y2 and Y3 in the same molecule are bonded to a silicon atom to form a chelate. Y4 and Y5 are groups formed by proton-donating substituents releasing protons, and groups Y4 and Y5 in the same molecule are combined with a silicon atom to form a chelate structure. X2 and X3 may be the same or different from each other, and Y2, Y3, Y4 and Y5 may be the same or different from each other, and Z1 is an organic having an aromatic ring or a heterocyclic ring. Represents a group or an aliphatic group.)   6. The resin composition for encapsulating a semiconductor according to claim 1, wherein a hydroxyl group is further bonded to each of the silane coupling agent (E) and two or more adjacent carbon atoms constituting the aromatic ring. The resin composition for semiconductor sealing characterized by including the compound (F) which carried out.   The resin composition for semiconductor encapsulation according to claim 6, wherein the compound (F) is a compound in which a hydroxyl group is bonded to each of two adjacent carbon atoms constituting an aromatic ring. Resin composition for stopping.   7. The semiconductor sealing resin composition according to claim 6, wherein the compound (F) is a compound in which a hydroxyl group is bonded to each of two or more adjacent carbon atoms constituting a naphthalene ring. Resin composition for sealing.   The resin composition for semiconductor encapsulation according to claim 6, wherein the compound (F) is a compound in which a hydroxyl group is bonded to each of two adjacent carbon atoms constituting a naphthalene ring. Resin composition for stopping.   The resin composition for encapsulating a semiconductor according to any one of claims 6 to 9, wherein the compound (F) is contained in an amount of 0.01% by weight or more and 1% by weight or less based on the whole resin composition. A semiconductor sealing resin composition.   The resin composition for semiconductor encapsulation according to any one of claims 6 to 10, wherein the silane coupling agent (E) is contained in an amount of 0.01% by weight or more and 1% by weight or less of the entire resin composition. A resin composition for encapsulating a semiconductor.   12. The resin composition for encapsulating a semiconductor according to claim 1, wherein the inorganic filler (C) is contained in an amount of 80% by weight or more and 92% by weight or less of the entire resin composition. A semiconductor sealing resin composition.   A semiconductor device, wherein a semiconductor element is sealed with a cured product of the resin composition for semiconductor sealing according to claim 1. A semiconductor device used for an electronic component that is required to guarantee operation in a high temperature environment exceeding 150 ° C., wherein the semiconductor element is sealed with a cured product of the resin composition for semiconductor sealing according to claim 3. A semiconductor device characterized by comprising:   A semiconductor element is mounted on one surface of the substrate, and substantially only one surface on the substrate surface side on which the semiconductor element is mounted is sealed with a cured product of the resin composition for semiconductor sealing according to claim 4. An area surface mount type semiconductor device characterized by the above.

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