JP5211737B2 - Epoxy resin composition for semiconductor encapsulation and semiconductor device - Google Patents

Description

  The present invention relates to an epoxy resin composition for semiconductor encapsulation and a semiconductor device.

  Along with the market trend of downsizing, weight reduction, and high performance of electronic devices, higher integration of semiconductor elements is progressing year by year, and surface mounting of semiconductor devices is being promoted. Under such circumstances, the demand for a resin composition for encapsulating a semiconductor has become increasingly severe. In particular, surface mounting of semiconductor devices is becoming common, and moisture-absorbing semiconductor devices are exposed to high temperatures during solder processing, and cracks occur in the semiconductor devices due to the explosive stress of vaporized water vapor, or semiconductor elements As a result of the occurrence of peeling at the interface between the lead frame and the cured product of the resin composition for encapsulating a semiconductor, defects that greatly impair the electrical reliability of the semiconductor device occur. Improving performance is a major issue.

In addition, the use of lead-free solder, which has a higher melting point than before, has been increasing due to the move to eliminate the use of lead against the background of environmental problems. By applying this lead-free solder, it is necessary to increase the temperature at the time of the soldering process by about 20 ° C. compared to the prior art, and the above-described cracks and interfacial delamination are likely to occur. The problem which falls remarkably compared with has arisen. As a method for improving the reliability of this semiconductor device, a method is disclosed in which a dicyclopentadiene type epoxy resin or a low-viscosity crystalline epoxy resin is applied and more inorganic fillers are blended (for example, patent literature) 1, Patent Document 2 and Patent Document 3).
However, in recent advanced applications, semiconductor devices are becoming thinner and multi-layered, and encapsulating resins are required to have further improved flow characteristics and improved solder resistance. Was not obtained.

Japanese Patent No. 3478315 JP-A-7-130919 JP-A-8-20673

  The present invention provides an epoxy resin composition for semiconductor encapsulation having an excellent balance between fluidity and solder resistance, and a semiconductor device having excellent reliability obtained by encapsulating a semiconductor element with a cured product thereof. .

  The epoxy resin composition for semiconductor encapsulation of the present invention comprises (A) an epoxy resin comprising a compound represented by the following general formula (1) and its impurities, and (B) a compound containing two or more phenolic hydroxyl groups, (C) an inorganic filler, wherein the epoxy resin (A) exhibits a melt viscosity of 1.0 dPa · sec or less in a melt viscosity measurement at 150 ° C. using an ICI viscometer, and an RI detector In the gel permeation chromatography (GPC) measurement using T, the peak top retention time corresponding to n = 1 body of general formula (1) is T1, the detection value is L1, and n = 2 of general formula (1). If the retention time of the peak top corresponding to the body is T2, and the detected value at the retention time T0 (where T0 = 0.65 × T1 + 0.35 × T2) is L0, And satisfying 0.6 ≦ L0 / L1 ≦ 1.1.

(However, in the said General formula (1), R1 and R2 are respectively C1-C6 hydrocarbon groups, and may mutually be same or different. A is an integer of 0-4. And b is an integer of 0 to 3. n is an integer of 0 to 20.)

  In the epoxy resin composition for semiconductor encapsulation of the present invention, the component detected at the retention time T0 in the gel permeation chromatography (GPC) measurement using the RI detector of the epoxy resin (A) is the general formula. It can be a by-product in producing the compound represented by (1).

  The epoxy resin composition for semiconductor encapsulation of the present invention comprises a compound represented by the general formula (1) and an impurity thereof and an epoxy resin (A) composed of the impurity represented by the following general formula (2) and the impurity. It can be an epoxy resin.

(However, in the said General formula (2), n is an integer of 0-20.)

  The semiconductor device of the present invention is characterized in that a semiconductor element is sealed with a cured product of the above-described epoxy resin composition for semiconductor sealing.

  According to the present invention, it is possible to obtain a highly reliable semiconductor device in which a semiconductor element is sealed with a resin composition excellent in balance with solder resistance and a cured product thereof without impairing fluidity.

The present invention comprises (A) a compound represented by the general formula (1) and its impurities, n in melt viscosity at 150 ° C. and gel permeation chromatography (GPC) measurement.
An epoxy resin in which the L0 / L1 ratio defining the amount of by-products detected between = 1 body and n = 2 body is a specific range, and (B) a compound containing two or more phenolic hydroxyl groups, (C) By including an inorganic filler, an epoxy resin composition for semiconductor encapsulation excellent in the balance between fluidity and solder resistance and a semiconductor device excellent in reliability can be obtained. Hereinafter, the present invention will be described in detail.

  First, the epoxy resin composition for semiconductor encapsulation will be described. In the epoxy resin composition for semiconductor encapsulation of the present invention, an epoxy resin (A) composed of a compound represented by the following general formula (1) and impurities thereof is used as the epoxy resin. Since the epoxy resin (A) has a cyclic alicyclic structure, a cured product of an epoxy resin composition using the epoxy resin has a low water absorption and excellent adhesion, and the cyclic alicyclic structure is a dicyclopentadiene structure. Thus, the resin can be produced industrially easily and at low cost.

(However, in the said General formula (1), R1 and R2 are respectively C1-C6 hydrocarbon groups, and may mutually be same or different. A is an integer of 0-4. And b is an integer of 0 to 3. n is an integer of 0 to 20.)

The epoxy resin (A) comprising the compound represented by the general formula (1) and its impurities used in the epoxy resin composition for semiconductor encapsulation of the present invention is gel permeation chromatography (GPC) using an RI detector. In the measurement, the peak top retention time corresponding to n = 1 body of the general formula (1) is T1, the detection value is L1, and the peak top retention time corresponding to n = 2 body of the general formula (1) is T2. When the detection value at the retention time T0 (where T0 = 0.65 × T1 + 0.35 × T2) is L0, the lower limit of the L0 / L1 ratio is preferably 0.6 or more. More preferably, it is more preferably 0.7 or more, and particularly preferably 0.8 or more. As the epoxy resin (A) comprising the compound represented by the general formula (1) and its impurities, for example, Nippon Kayaku Co., Ltd. XD-1000, XD-1000-L and the like were available. These had an L0 / L1 ratio of less than 0.6. For this reason, the crosslink density of the cured product of the epoxy resin composition is high, and the internal stress during heat may be high, and as a result, the solder resistance in the semiconductor device may be insufficient. On the other hand, if the L0 / L1 ratio of the epoxy resin (A) composed of the compound represented by the general formula (1) and its impurities is equal to or higher than the lower limit, the elastic modulus in the temperature region where the solder melts is Epoxy resin composition that is reasonably low and excellent in low-stress property can be obtained, and epoxy that is particularly excellent in solder resistance combined with the good adhesion and low water absorption inherent in the epoxy resin (A) A resin composition and a highly reliable semiconductor device can be obtained. Here, in the gel permeation chromatography (GPC) measurement using the RI detector of the epoxy resin (A) composed of the compound represented by the general formula (1) and its impurities, the component detected at the retention time T0 is , A by-product produced when the compound represented by the general formula (1) is produced. For example, from the measurement of FD-MS, the compounds represented by the following general formulas (3) to (5) and the hydroxyl groups of the following compounds: It is presumed that a compound having a glycidyl group added thereto exists. Although the reason why the low stress property and the solder resistance are good when the L0 / L1 ratio is equal to or higher than the above lower limit value is not clear, these components detected at the retention time T0 are represented by the general formula (1). Compared to compounds, it has the characteristics that the distance between cross-linking points is long or the skeleton is flexible, so that by including these components in appropriate amounts, an appropriate stress reduction effect, elastic modulus reduction effect, etc. It is thought that it is expressed.

(However, in said formula (3)-(5), R1, R2 is respectively a C1-C6 hydrocarbon group, and may mutually be same or different. A is 0-4. And b is an integer of 0 to 3.)

Moreover, the upper limit of said L0 / L1 ratio is 1. for the epoxy resin (A) comprising the compound represented by the general formula (1) and its impurities used in the epoxy resin composition for semiconductor encapsulation of the present invention. A value of 1 or less is preferred, a value of 1.0 or less is more preferred, and a value of 0.9 or less is particularly preferred. If the L0 / L1 ratio of the epoxy resin (A) composed of the compound represented by the general formula (1) and its impurities is not more than the above upper limit, the subcomponent detected at the retention time T0 will not be excessive, An epoxy resin composition excellent in heat resistance, moisture resistance and curability can be obtained. In order to make the L0 / L1 ratio of the epoxy resin (A) composed of the compound represented by the general formula (1) and its impurities into the above range higher than the conventional range, it can be adjusted by a method described later.

  Moreover, the epoxy resin (A) which consists of the compound represented by the said General formula (1) used with the epoxy resin composition for semiconductor sealing of this invention, and its impurity, and said L0 / L1 ratio is in the said range. However, it is preferably 1.0 dPa · sec or less, more preferably 0.7 dPa · sec or less, and particularly preferably 0.6 dPa · sec or less in melt viscosity measurement at 150 ° C. The method for measuring the melt viscosity of the epoxy resin (A) at 150 ° C. is based on an ICI viscometer. If the melt viscosity of the epoxy resin (A) comprising the compound represented by the general formula (1) and its impurities and having the L0 / L1 ratio within the above range is not more than the above upper limit, the fluidity is excellent, and An epoxy resin composition having excellent low stress properties can be obtained.

The epoxy resin (A) comprising the compound represented by the general formula (1) and its impurities used in the epoxy resin composition for semiconductor encapsulation of the present invention is obtained by polyaddition reaction of phenols and dicyclopentadiene. After obtaining a phenol resin composed of a compound represented by the following general formula (6) and its impurities, it can be obtained by glycidyl etherification with epihalohydrin. In the gel permeation chromatography (GPC) measurement using an RI detector, in order to set the L0 / L1 ratio that defines the amount of the component detected at the retention time T0 within the above range, an epoxy resin ( It can be adjusted in two processes, a step of synthesizing a phenol resin as a precursor of A) and a step of producing an epoxy resin (A) from the phenol resin as a precursor. Dicyclopentadiene has an advantage that it can be produced relatively easily and inexpensively from cyclopentadiene contained in the C5 fraction.

(However, in the said General formula (6), R1 and R2 are respectively C1-C6 hydrocarbon groups, and may mutually be same or different. A is an integer of 0-4. And b is an integer of 0 to 3. n is an integer of 0 to 20.)

  Although it does not specifically limit as phenols used for manufacture of the phenol resin used as the precursor of an epoxy resin (A), For example, phenol, o-cresol, p-cresol, m-cresol, phenylphenol , Ethylphenol, n-propylphenol, iso-propylphenol, t-butylphenol, xylenol, methylpropylphenol, methylbutylphenol, dipropylphenol, dibutylphenol, nonylphenol, mesitol, 2,3,5-trimethylphenol, 2,3 , 6-trimethylphenol and the like. Among these, phenol and o-cresol are preferable, and phenol is more preferable. These may be used alone or in combination of two or more.

  The method for synthesizing the phenol resin as a precursor of the epoxy resin (A) is not particularly limited, and examples thereof include a method of co-condensation using an acidic catalyst in the presence of phenols and dicyclopentadiene. You may use a cyclopentadiene type phenol resin.

  In order to obtain an epoxy resin (A) having a specific L0 / L1 ratio defined in the present invention, adjustment may be made by a technique such as reducing the amount of acidic catalyst used in the polyaddition reaction or lowering the reaction temperature. it can.

The method for synthesizing the epoxy resin (A) comprising the compound represented by the general formula (1) and its impurities used in the epoxy resin composition for semiconductor encapsulation of the present invention is not particularly limited. For example, an epoxy resin (A 1) is dissolved in an excess of epichlorohydrin, and then dissolved in the presence of an alkali metal hydroxide such as sodium hydroxide or potassium hydroxide, preferably at 50 to 150 ° C., preferably 60 to 120 ° C. The method etc. which are made to react for 10 hours are mentioned. After completion of the reaction, excess epichlorohydrin is distilled off, the residue is dissolved in a solvent such as toluene, methyl isobutyl ketone, filtered, washed with water to remove inorganic salts, and then the epoxy resin ( A) can be obtained. In order to obtain an epoxy resin (A) having a specific L0 / L1 ratio defined in the present invention, the compounding amount of epihalohydrin is reduced within a range that does not increase the molecular weight by self-polymerization during synthesis, or a halogen adduct in the epoxy resin, It can be adjusted by a technique such as reducing the blending amount and blending concentration of the alkali metal hydroxide as long as the unclosed epoxy group does not become excessive. Moreover, it stipulates in the present invention by appropriately combining known purification methods such as column chromatography fractionation, molecular distillation, recrystallization and the like with the epoxy resin represented by the general formula (1) synthesized or marketed by a known method. You may adjust to specific L0 / L1 ratio. For example, a component detected at a retention time T0 is purified and extracted from a commercially available dicyclopentadiene type epoxy resin by a liquid column chromatography method, and this is commercially available or synthesized by an epoxy resin represented by the general formula (1) The method of adjusting specific L0 / L1 ratio by adding to is mentioned.

  The gel permeation chromatography (GPC) measurement of the present invention is performed as follows. The GPC apparatus is composed of a pump, an injector, a guard column, a column, and a detector, and tetrahydrofuran (THF) is used as a solvent. The pump flow rate is 0.5 ml / min. A flow rate higher than this is not preferable because the detection accuracy of the target molecular weight is lowered. In order to accurately measure at the above flow rate, it is necessary to use a pump with good flow rate accuracy, and the flow rate accuracy is preferably 0.10% or less. A commercially available guard column (for example, TSK GUARDCOLUMN HHR-L: diameter 6.0 mm, tube length 40 mm) manufactured by Tosoh Corporation, and a commercially available polystyrene gel column (TSK-GEL GMHHR- manufactured by Tosoh Corporation) are used for the guard column. L: diameter 7.8 mm, tube length 30 mm) are connected in series. A differential refractometer (RI detector, for example, a differential refractive index (RI) detector W2414 manufactured by WATERS) is used as the detector. Prior to measurement, the guard column, the column, and the inside of the detector are kept stable at 40 ° C. As a sample, a THF solution of an epoxy resin (A) adjusted to a concentration of 3 to 4 mg / ml is prepared, and this is injected from an about 50 to 150 μl injector to perform measurement.

In the epoxy resin composition for semiconductor encapsulation of the present invention, other epoxy resins are used as long as the effect of using the epoxy resin (A) comprising the compound represented by the general formula (1) and its impurities is not impaired. Can be used together. Examples of the epoxy resin that can be used in combination include crystalline epoxy resins such as biphenyl type epoxy resins, bisphenol type epoxy resins, and stilbene type epoxy resins; novolac type epoxy resins such as phenol novolac type epoxy resins and cresol novolac type epoxy resins; Type epoxy resin, polyfunctional epoxy resin such as alkyl-modified triphenolmethane type epoxy resin; phenol aralkyl type epoxy resin having phenylene skeleton, phenol aralkyl type epoxy resin having biphenylene skeleton, naphthol aralkyl type epoxy resin having phenylene skeleton, etc. Aralkyl-type epoxy resin; dihydroxynaphthalene-type epoxy resin, dihydroxynaphthalene and / or dihydroxynaphthalene dimer Naphthol type epoxy resin having an epoxy resin obtained by Le of; triglycidyl isocyanurate include triazine nucleus-containing epoxy resins such as monoallyl diglycidyl isocyanurate. Considering moisture resistance reliability as an epoxy resin composition for semiconductor encapsulation, it is preferable that Na ⁺ ions and Cl ⁻ ions as ionic impurities are as small as possible. From the viewpoint of curability, the epoxy equivalent is 100 g / eq or more and 500 g. / Eq or less is preferable.

  When the other epoxy resin is used in combination, the compounding ratio of the compound represented by the general formula (1) and the epoxy resin (A) composed of impurities thereof is 40% by weight or more based on the total epoxy resin. Preferably, it is more preferably 60% by weight or more, and particularly preferably 70% by weight or more. When the blending ratio is within the above range, it is possible to obtain an effect of improving adhesion, low water absorption, solder resistance and the like. In particular, when the epoxy resin of the epoxy resin composition for semiconductor encapsulation of the present invention is composed only of the epoxy resin (A), the above effects can be remarkably obtained.

  Although it does not specifically limit about the lower limit of the mixture ratio of the whole epoxy resin, It is preferable that it is 2 weight% or more in the epoxy resin composition for whole semiconductor sealing, and it is more preferable that it is 4 weight% or more. When the lower limit value of the blending ratio is within the above range, sufficient fluidity can be obtained. Further, the upper limit of the blending ratio of the whole epoxy resin is not particularly limited, but is preferably 15% by weight or less, more preferably 13% by weight or less in the total epoxy resin composition for semiconductor encapsulation. preferable. When the upper limit of the blending ratio is within the above range, good solder resistance can be obtained.

  In the epoxy resin composition for semiconductor encapsulation of the present invention, a compound (B) containing two or more phenolic hydroxyl groups is used as a curing agent from the viewpoint of flame resistance, moisture resistance, electrical properties, curability, storage stability, and the like. . The compound (B) containing two or more phenolic hydroxyl groups is a monomer, oligomer or polymer in general having two or more phenolic hydroxyl groups in one molecule, and its molecular weight and molecular structure are not particularly limited. For example, novolak type resins such as phenol novolac resin and cresol novolak resin; polyfunctional phenol resins such as triphenolmethane type phenol resin; modified phenol resins such as terpene modified phenol resin and dicyclopentadiene modified phenol resin; Or aralkyl type resins such as phenol aralkyl resins having a biphenylene skeleton, phenylene and / or naphthol aralkyl resins having a biphenylene skeleton; bisphenol compounds such as bisphenol A and bisphenol F, etc. Type may be used in combination of two or more be used alone. Among these, the hydroxyl equivalent is preferably 90 g / eq or more and 250 g / eq or less from the viewpoint of curability.

  The lower limit of the blending ratio of the entire compound (B) containing two or more phenolic hydroxyl groups is not particularly limited, but is preferably 1.5% by weight or more in the total epoxy resin composition for semiconductor encapsulation. More preferably, it is 2.5% by weight or more. When the lower limit value of the blending ratio is within the above range, sufficient fluidity can be obtained. Further, the upper limit of the blending ratio of the entire compound (B) containing two or more phenolic hydroxyl groups is not particularly limited, but is preferably 10% by weight or less in the total epoxy resin composition for semiconductor encapsulation. 8% by weight or less is more preferable. When the upper limit of the blending ratio is within the above range, good solder resistance can be obtained.

  Moreover, as a compounding ratio with the whole epoxy resin and the compound (B) whole containing 2 or more phenolic hydroxyl groups, the number of epoxy groups (EP) of the whole epoxy resin and the whole compound (B) containing 2 or more phenolic hydroxyl groups are included. The equivalent ratio (EP) / (OH) to the number of phenolic hydroxyl groups (OH) is preferably 0.8 or more and 1.3 or less. When the equivalent ratio is within this range, sufficient curability can be obtained during molding of the epoxy resin composition for semiconductor encapsulation. Moreover, when the equivalent ratio is within this range, good physical properties in the resin cured product can be obtained.

  In the epoxy resin composition for semiconductor encapsulation of the present invention, (C) an inorganic filler is used. As an inorganic filler (C) used for the epoxy resin composition for semiconductor encapsulation of the present invention, those generally used for resin compositions for semiconductor encapsulation can be used, for example, fused silica, spherical silica. , Crystalline silica, alumina, silicon nitride, aluminum nitride and the like. The particle size of the inorganic filler (C) is preferably 0.01 μm or more and 150 μm or less in consideration of the filling property to the mold.

  As a lower limit of the content rate of an inorganic filler (C), it is preferable that it is 80 weight% or more of the whole epoxy resin composition for semiconductor sealing, It is more preferable that it is 82 weight% or more, 84 weight% or more It is particularly preferred that When the lower limit of the content ratio of the inorganic filler (C) is within the above range, the moisture absorption does not increase or the strength does not decrease as the cured product physical property of the epoxy resin composition for semiconductor encapsulation. Good solder crack resistance can be obtained. Further, the upper limit of the content of the inorganic filler (C) is preferably 92% by weight or less, more preferably 91% by weight or less, and more preferably 90% by weight based on the entire epoxy resin composition for semiconductor encapsulation. % Or less is particularly preferable. When the upper limit value of the content ratio of the inorganic filler (C) is within the above range, the flowability is not impaired and good moldability can be obtained.

In the epoxy resin composition for semiconductor encapsulation of the present invention, a curing accelerator (D) can be further used. The curing accelerator (D) only needs to promote the reaction between the epoxy group of the epoxy resin and the phenolic hydroxyl group of the compound containing two or more phenolic hydroxyl groups. You can use what is being used. Specific examples include phosphorus-containing compounds such as organic phosphines, tetra-substituted phosphonium compounds, phosphobetaine compounds, adducts of phosphine compounds and quinone compounds, adducts of phosphonium compounds and silane compounds; 1,8-diazabicyclo (5 , 4, 0) Undecene-7, benzyldimethylamine, nitrogen atom-containing compounds such as 2-methylimidazole. Of these, phosphorus atom-containing compounds are preferred. From the viewpoint of the balance between fluidity and curability, tetra-substituted phosphonium compounds, phosphobetaine compounds, adducts of phosphine compounds and quinone compounds, and additions of phosphonium compounds and silane compounds. A catalyst having latency such as a product is more preferable. In view of fluidity, tetra-substituted phosphonium compounds are particularly preferred, and in view of the low modulus of heat when cured epoxy resin compositions for semiconductor encapsulation are adducts of phosphobetaine compounds, phosphine compounds and quinone compounds. In view of the latent curing property, an adduct of a phosphonium compound and a silane compound is particularly preferable.

  Examples of the organic phosphine that can be used in the epoxy resin composition for semiconductor encapsulation of the present invention include a first phosphine such as ethylphosphine and phenylphosphine, a second phosphine such as dimethylphosphine and diphenylphosphine, trimethylphosphine, triethylphosphine, Third phosphine such as tributylphosphine and triphenylphosphine can be used.

  Examples of the tetra-substituted phosphonium compound that can be used in the semiconductor sealing epoxy resin composition of the present invention include compounds represented by the following general formula (7).

(However, in the said General formula (7), P represents a phosphorus atom. R4, R5, R6, and R7 represent an aromatic group or an alkyl group. A is a functional group chosen from a hydroxyl group, a carboxyl group, and a thiol group. Represents an anion of an aromatic organic acid having at least one of the following: AH is an aromatic organic acid having at least one functional group selected from a hydroxyl group, a carboxyl group, and a thiol group in the aromatic ring X and y are integers of 1 to 3, z is an integer of 0 to 3, and x = y.

  Although the compound represented by General formula (7) is obtained as follows, for example, it is not limited to this. First, a tetra-substituted phosphonium halide, an aromatic organic acid and a base are mixed in an organic solvent and mixed uniformly to generate an aromatic organic acid anion in the solution system. Then, when water is added, the compound represented by the general formula (7) can be precipitated. In the compound represented by the general formula (7), R4, R5, R6 and R7 bonded to the phosphorus atom are phenyl groups, and AH is a compound having a hydroxyl group in an aromatic ring, that is, phenols, and A Is preferably an anion of the phenol.

As a phosphobetaine compound which can be used with the epoxy resin composition for semiconductor encapsulation of this invention, the compound etc. which are represented, for example by following General formula (8) are mentioned.
(However, in the said General formula (8), X1 represents a C1-C3 alkyl group, Y1 represents a hydroxyl group. F is an integer of 0-5, and g is an integer of 0-3.)

  The compound represented by the general formula (8) is obtained as follows, for example. First, it is obtained through a step of bringing a triaromatic substituted phosphine, which is a third phosphine, into contact with a diazonium salt and replacing the triaromatic substituted phosphine with a diazonium group of the diazonium salt. However, the present invention is not limited to this.

Examples of the adduct of a phosphine compound and a quinone compound that can be used in the epoxy resin composition for semiconductor encapsulation of the present invention include compounds represented by the following general formula (9).
(However, in the said General formula (9), P represents a phosphorus atom. R8, R9, and R10 represent a C1-C12 alkyl group or a C6-C12 aryl group, and they are mutually the same. R11, R12 and R13 each represent a hydrogen atom or a hydrocarbon group having 1 to 12 carbon atoms and may be the same or different from each other, and R11 and R12 are bonded to form a cyclic structure. May be.)

  Examples of the phosphine compound used as an adduct of a phosphine compound and a quinone compound include an aromatic ring such as triphenylphosphine, tris (alkylphenyl) phosphine, tris (alkoxyphenyl) phosphine, trinaphthylphosphine, and tris (benzyl) phosphine. Those having a substituent such as a substituent or an alkyl group or an alkoxyl group are preferred, and examples of the substituent such as an alkyl group and an alkoxyl group include those having 1 to 6 carbon atoms. From the viewpoint of availability, triphenylphosphine is preferable.

  In addition, examples of the quinone compound used for the adduct of the phosphine compound and the quinone compound include o-benzoquinone, p-benzoquinone, and anthraquinones. Among them, p-benzoquinone is preferable from the viewpoint of storage stability.

  As a method for producing an adduct of a phosphine compound and a quinone compound, the adduct can be obtained by contacting and mixing in a solvent capable of dissolving both organic tertiary phosphine and benzoquinone. The solvent is preferably a ketone such as acetone or methyl ethyl ketone, which has low solubility in the adduct. However, the present invention is not limited to this.

  In the compound represented by the general formula (9), R8, R9 and R10 bonded to the phosphorus atom are phenyl groups, and R11, R12 and R13 are hydrogen atoms, that is, 1,4-benzoquinone and triphenyl A compound to which phosphine is added is preferable in that it reduces the thermal elastic modulus of the cured product of the epoxy resin composition for semiconductor encapsulation.

Examples of the adduct of a phosphonium compound and a silane compound that can be used in the epoxy resin composition for semiconductor encapsulation of the present invention include compounds represented by the following general formula (10).
(In the above general formula (10), P represents a phosphorus atom and Si represents a silicon atom. R14, R15, R16 and R17 are each an organic group having an aromatic ring or a heterocyclic ring, or an aliphatic group. X2 is an organic group bonded to the groups Y2 and Y3, where X3 is an organic group bonded to the groups Y4 and Y5. And Y3 represent a group formed by releasing a proton from a proton donating group, and groups Y2 and Y3 in the same molecule are bonded to a silicon atom to form a chelate structure, and Y4 and Y5 are proton donating groups. The group represents a group formed by releasing a proton, and the groups Y4 and Y5 in the same molecule are bonded to a silicon atom to form a chelate structure.X2 and X3 are the same or different from each other. Well Y2, Y3, Y4, and Y5 is .Z1 which may be the same or different from each other is an organic group or an aliphatic group, an aromatic ring or a heterocyclic ring.)

  In the general formula (10), as R14, R15, R16 and R17, for example, phenyl group, methylphenyl group, methoxyphenyl group, hydroxyphenyl group, naphthyl group, hydroxynaphthyl group, benzyl group, methyl group, ethyl group, n-butyl group, n-octyl group, cyclohexyl group, and the like. Among these, an aromatic group having a substituent such as phenyl group, methylphenyl group, methoxyphenyl group, hydroxyphenyl group, hydroxynaphthyl group, or the like. A substituted aromatic group is more preferred.

Moreover, in General formula (10), X2 is an organic group couple | bonded with Y2 and Y3. Similarly, X3 is an organic group bonded to the groups Y4 and Y5. Y2 and Y3 are groups formed by proton-donating groups releasing protons, and groups Y2 and Y3 in the same molecule are combined with a silicon atom to form a chelate structure. Similarly, Y4 and Y5 are groups formed by proton-donating groups releasing protons, and groups Y4 and Y5 in the same molecule are combined with a silicon atom to form a chelate structure. The groups X2 and X3 may be the same or different from each other, and the groups Y2, Y3, Y4, and Y5 may be the same or different from each other. The groups represented by -Y2-X2-Y3- and -Y4-X3-Y5- in general formula (10) are composed of groups in which a proton donor releases two protons. Examples of proton donors include catechol, pyrogallol, 1,2-dihydroxynaphthalene, 2,3-dihydroxynaphthalene, 2,2′-biphenol, 1,1′-bi-2-naphthol, and salicylic acid. 1-hydroxy-2-naphthoic acid, 3-hydroxy-2-naphthoic acid, chloranilic acid, tannic acid, 2-hydroxybenzyl alcohol, 1,2-cyclohexanediol, 1,2-propanediol and glycerin. Among these, catechol, 1,2-dihydroxynaphthalene, and 2,3-dihydroxynaphthalene are more preferable.

  Z1 in the general formula (10) represents an organic group or an aliphatic group having an aromatic ring or a heterocyclic ring. Specific examples thereof include a methyl group, an ethyl group, a propyl group, a butyl group, and a hexyl group. Reactions of aliphatic hydrocarbon groups such as octyl and octyl groups, aromatic hydrocarbon groups such as phenyl, benzyl, naphthyl and biphenyl, glycidyloxypropyl, mercaptopropyl, aminopropyl and vinyl Among them, a methyl group, an ethyl group, a phenyl group, a naphthyl group, and a biphenyl group are more preferable from the viewpoint of thermal stability.

  As a method for producing an adduct of a phosphonium compound and a silane compound, a silane compound such as phenyltrimethoxysilane and a proton donor such as 2,3-dihydroxynaphthalene are added to a flask containing methanol and dissolved, and then room temperature. Sodium methoxide-methanol solution is added dropwise with stirring. Furthermore, when a solution prepared by dissolving a tetra-substituted phosphonium halide such as tetraphenylphosphonium bromide in methanol in methanol is added dropwise with stirring at room temperature, crystals are precipitated. The precipitated crystals are filtered, washed with water, and vacuum dried to obtain an adduct of a phosphonium compound and a silane compound. However, it is not limited to this.

  The blending ratio of the curing accelerator (D) that can be used in the epoxy resin composition for semiconductor encapsulation of the present invention is more preferably 0.1% by weight or more and 1% by weight or less in the total epoxy resin composition. . Sufficient curability can be acquired as the compounding quantity of a hardening accelerator (D) exists in the said range. Moreover, sufficient fluidity | liquidity can be acquired as the compounding quantity of a hardening accelerator (D) is in the said range.

  In the epoxy resin composition for semiconductor encapsulation of the present invention, an adhesion assistant (E) such as a silane coupling agent can be added in order to improve the adhesion between the epoxy resin and the inorganic filler (C). . Examples thereof include, but are not limited to, epoxy silane, amino silane, ureido silane, mercapto silane, etc., which react between the epoxy resin and the inorganic filler to improve the interfacial strength between the epoxy resin and the inorganic filler. If it is.

  More specifically, examples of the epoxy silane include γ-glycidoxypropyltriethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, β- (3,4- And epoxycyclohexyl) ethyltrimethoxysilane. Examples of the aminosilane include γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, and N-β (aminoethyl) γ-aminopropyl. Methyldimethoxysilane, N-phenylγ-aminopropyltriethoxysilane, N-phenylγ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltriethoxysilane, N-6- (aminohexyl) 3 -Aminopropyltrimethoxysilane, N- (3- (trimethoxysilylpropyl) -1,3-benzenedimethanane, etc. In addition, examples of ureidosilane include γ-ureidopropyltriethoxysilane, hexa Methyl disilazane, etc. In addition, mercap Examples of tosilane include γ-mercaptopropyltrimethoxysilane, etc. These silane coupling agents may be used alone or in combination of two or more.

The blending ratio of the adhesion assistant (E) such as a silane coupling agent that can be used in the epoxy resin composition for semiconductor encapsulation of the present invention is 0.01% by weight or more and 1% by weight in the total epoxy resin composition. The following is preferable, more preferably 0.05% by weight or more and 0.8% by weight or less, and particularly preferably 0.1% by weight or more and 0.6% by weight or less. If the blending amount of the adhesion assistant (E) such as a silane coupling agent is not less than the above lower limit value, the interface strength between the epoxy resin and the inorganic filler will not decrease, and good solder crack resistance in the semiconductor device Can be obtained. Moreover, if the blending amount of the adhesion assistant (E) such as a silane coupling agent is within the above range, the water absorption of the cured product of the epoxy resin composition does not increase, and good solder crack resistance in the semiconductor device. Sex can be obtained.

  In the epoxy resin composition for semiconductor encapsulation of the present invention, in addition to the components described above, colorants such as carbon black, bengara and titanium oxide; natural wax such as carnauba wax; synthetic wax such as polyethylene wax; stearic acid and stearic acid Release agents such as higher fatty acids such as zinc and metal salts thereof or paraffin; low-stress additives such as silicone oil and silicone rubber; inorganic ion exchangers such as bismuth oxide hydrate; aluminum hydroxide and magnesium hydroxide Additives such as metal hydroxides and flame retardants such as zinc borate, zinc molybdate, phosphazene, and antimony trioxide may be appropriately blended.

  The epoxy resin composition for semiconductor encapsulation of the present invention is obtained by uniformly mixing the components (A) to (C) and other additives at room temperature using, for example, a mixer, and then a heating roll. In addition, it is possible to use a material in which the degree of dispersion, the fluidity, and the like are appropriately adjusted as necessary, such as melt kneading using a kneader such as a kneader or an extruder, followed by cooling and pulverization.

  Next, the semiconductor device of the present invention will be described. To manufacture a semiconductor device by sealing a semiconductor element with a cured product of the epoxy resin composition for semiconductor sealing of the present invention, for example, a lead frame mounted with a semiconductor element, a circuit board or the like is placed in a mold cavity. Then, what is necessary is just to shape-harden the epoxy resin composition for semiconductor sealing by shaping | molding methods, such as a transfer mold, a compression mold, and an injection mold.

  The semiconductor element sealed with the semiconductor device of the present invention is not particularly limited, and examples thereof include an integrated circuit, a large-scale integrated circuit, a transistor, a thyristor, a diode, and a solid-state imaging element.

  The form of the semiconductor device of the present invention is not particularly limited. For example, the dual in-line package (DIP), the plastic lead chip carrier (PLCC), the quad flat package (QFP), the low profile package, and the like. Quad Flat Package (LQFP), Small Outline Package (SOP), Small Outline J Lead Package (SOJ), Thin Small Outline Package (TSOP), Thin Quad Flat Package (TQFP), Examples include a tape carrier package (TCP), a ball grid array (BGA), and a chip size package (CSP).

  The semiconductor device of the present invention in which a semiconductor element is encapsulated with a cured product of an epoxy resin composition for encapsulating a semiconductor by a molding method such as transfer molding is used as it is or at a temperature of about 80 to 200 ° C. for about 10 minutes to 10 hours. After being fully cured over a period of time, it is mounted on an electronic device or the like.

  FIG. 1 is a view showing a cross-sectional structure of an example of a semiconductor device using the epoxy resin composition for semiconductor encapsulation according to the present invention. The semiconductor element 1 is fixed on the die pad 3 via the die bond material cured body 2. The electrode pad of the semiconductor element 1 and the lead frame 5 are connected by a gold wire 4. The semiconductor element 1 is sealed with a cured body 6 of an epoxy resin composition for semiconductor sealing.

  EXAMPLES Hereinafter, although an Example demonstrates this invention concretely, this invention is not limited at all by these Examples. Hereinafter, the blending ratio is parts by weight. The components used in Examples and Comparative Examples are shown below.

In addition, the gel permeation chromatography (GPC) measurement of the epoxy resin (A) and the calculation of the L0 / L1 ratio were performed under the following conditions. 6 ml of solvent tetrahydrofuran (THF) was added to 20 mg of epoxy resin and sufficiently dissolved, and subjected to GPC measurement. The GPC system includes WATERS module W2695, Tosoh TSK GUARDCOLUMN HHR-L (diameter 6.0 mm, tube length 40 mm, guard column), Tosoh TSK-GEL GMHHR-L (diameter 7.8 mm, A tube having a tube length of 30 mm and two polystyrene gel columns) and a differential refractive index (RI) detector W2414 manufactured by WATERS, in series, was used. The flow rate of the pump was 0.5 ml / min, the temperature in the column and the differential refractometer was 40 ° C., and measurement was performed by injecting the measurement solution from a 100 μl injector. After the measurement, when the retention time of the peak top corresponding to n = 1 body is T1 and the retention time of the peak top corresponding to n = 2 body is T2 in the general formula (1), it is expressed by the following formula. The detection value L0 of the differential refractometer at the retention time T0 and the detection value L1 at T1 were analyzed, and the L0 / L1 ratio was calculated.
T0 = 0.65 × T1 + 0.35 × T2

(Epoxy resin)
Epoxy resin 1: dicyclopentadiene type phenol resin 1 represented by the following formula (11) (manufactured by Nippon Petrochemical Co., Ltd., DPP-6095L, hydroxyl equivalent 168, softening point 89 ° C.) 100 parts by weight of epichlorohydrin 264. Add 3 parts by weight, heat to 75 ° C., add 47.6 parts by weight of 50% by weight aqueous sodium hydroxide over 3 hours, react at the same temperature for 1 hour, let stand, and Rejected. Then, the remaining epichlorohydrin was distilled off by subjecting the oil layer to a reduced pressure treatment at 125 ° C. The residual solid was dissolved by adding 260 parts by weight of methyl isobutyl ketone, and after adding 260 parts by weight of distilled water and shaking, the aqueous layer was discarded. This washing operation was repeated until the washing water became neutral, then heated to 70 ° C., 24 parts by weight of a 10 wt% aqueous sodium hydroxide solution was added over 1 hour, and the reaction was further continued for 1 hour. After allowing this to stand, the aqueous layer was discarded. After repeating the operation (water washing) of adding 260 parts by weight of distilled water to the oil layer and discarding the shaking water layer until the washing water becomes neutral, methyl isobutyl ketone is distilled off by heating and depressurization, and epoxy resin 1 (Epoxy resin comprising a compound represented by the following formula (2) and impurities thereof (GPC chart is shown in FIG. 2. L0 / L1 ratio 0.8 in GPC, epoxy equivalent 246, softening point 52 ° C., ICI at 150 ° C. A viscosity of 0.34 dPa · s) was obtained.

Epoxy resin 2: Epoxy resin composed of a compound represented by the following formula (2) and impurities (XD-1000-2L manufactured by Nippon Kayaku Co., Ltd., L0 / L1 ratio 0.50 in GPC, epoxy equivalent 242, softening Tetrahydrofuran was added to an ICI viscosity of 0.59 dPa · s at 57 ° C. and 150 ° C. to prepare a 10% sample solution, which was subjected to column chromatography fractionation. The separation column uses a column container having an inner diameter of 80 mm and a length of 300 mm packed with polystyrene gel (manufactured by Yamazen Co., Ltd., particle diameter: 40 μm, pore size: 60 A), a separatory funnel, column, refractive index (RI) detector, Separating and collecting valves were connected in series. After supplying the sample solution from the separatory funnel, the tetrahydrofuran eluent is supplied, the refractive index (RI) chart is monitored, the second RI peak (n = 2 peaks of the compound of formula (2)) from the top , was collected extraction solution until detecting the start of the fourth peak (formula (n = 1 body peaks of compound 2)). After repeating the classification operation, 100 parts by weight of XD-1000-2L manufactured by Nippon Kayaku Co., Ltd. was added to 100 parts by weight of the extraction solution and dissolved, and then tetrahydrofuran was distilled off by heating under reduced pressure to obtain epoxy resin 2 (the following formula ( 2) and epoxy resin comprising the compound and its impurities (GPC chart is shown in FIG. 3. L0 / L1 ratio 0.6 in GPC, epoxy equivalent 259, softening point 58 ° C., ICI viscosity 0.6 dPa at 150 ° C. Obtained s).

Epoxy resin 3: dicyclopentadiene type phenol resin 1 represented by the following formula (11) (manufactured by Nippon Petrochemical Co., Ltd., DPP-6095L, hydroxyl equivalent 168, softening point 89 ° C.) 100 parts by weight of epichlorohydrin 291.9 1 part by weight and 310 parts by weight of dimethyl sulfoxide were added and dissolved, then heated to 40 ° C., 22.6 parts by weight of sodium hydroxide (solid fine granular, 99% purity reagent) was added over 2 hours, and the temperature was raised to 50 ° C. The temperature was raised to 70 ° C. for 2 hours, and the reaction was allowed to proceed for 2 hours. After the reaction, the operation of discarding the aqueous layer after adding 150 parts by weight of distilled water and shaking (washing) was repeated until the washing water became neutral, and then the oil layer was treated under reduced pressure at 125 ° C. to treat epichlorohydrin and dimethyl The sulfoxide was distilled off. The obtained solid was dissolved by adding 260 parts by weight of methyl isobutyl ketone, heated to 70 ° C., 18 parts by weight of 10% by weight aqueous sodium hydroxide solution was added over 1 hour, reacted for another 1 hour, and then allowed to stand. And
The water layer was discarded. After 260 parts by weight of distilled water was added to the oil layer and washed with water, the same washing operation was repeated until the washed water became neutral, and then methyl isobutyl ketone was distilled off by heating under reduced pressure to obtain epoxy resin 3 (the following formula Epoxy resin comprising the compound represented by (2) and its impurities (GPC chart is shown in FIG. 4. L0 / L1 ratio 0.6 in GPC, epoxy equivalent 241, softening point 53 ° C., ICI viscosity at 150 ° C. 38 dPa · s) was obtained.

Epoxy resin 4: Epoxy resin composed of a compound represented by the following formula (2) and impurities thereof (Nippon Kayaku Co., Ltd. XD-1000-2L, GPC chart is shown in Fig. 5. L0 / L1 ratio in GPC is 0 .4 , epoxy equivalent 242, softening point 57 ° C., ICI viscosity at 150 ° C. 0.59 dPa · s).

Epoxy resin 5: epoxy resin composed of a compound represented by the following formula (2) and impurities thereof (Nippon Kayaku Co., Ltd. XD-1000, GPC chart is shown in Fig. 6. L0 / L1 ratio in GPC 0.3 , Epoxy equivalent 254, softening point 74 ° C., ICI viscosity 2.8 dPa · s at 150 ° C.).

  Epoxy resin 6: Epoxy resin composed of a compound represented by the following formula (2) and impurities thereof (Epicron HP-7200H, manufactured by Dainippon Ink & Chemicals, Inc., GPC chart is shown in Fig. 7. L0 / L1 ratio in GPC 0.5, epoxy equivalent 278, softening point 80 ° C., ICI viscosity at 150 ° C. 4.11 dPa · s).

Epoxy resin 7: Biphenyl type crystalline epoxy resin (manufactured by Japan Epoxy Resins Co., Ltd., YX4000K. Epoxy equivalent 185, melting point 105 ° C., ICI viscosity 0.13 dPa · s at 150 ° C.).
Epoxy resin 8: flame retardant epoxy resin having a tetrabromobisphenol A structure (Dainippon Ink & Chemicals, Inc. Epicron 152S, epoxy equivalent 359, softening point 61, ICI viscosity at 150 ° C. of 1.08 dPa · s).
Epoxy resin 9: Orthocresol novolak type epoxy resin (Epicron N660 manufactured by Dainippon Ink & Chemicals, Inc., epoxy equivalent 210, softening point 62 ° C., ICI viscosity 2.34 dPa · s at 150 ° C.).

(Compounds containing two or more phenolic hydroxyl groups)
Phenol resin 1: Phenol novolak resin (manufactured by Sumitomo Bakelite Co., Ltd., PR-HF-3. Hydroxyl equivalent 104, softening point 80 ° C.)
Phenol resin 2: Phenol aralkyl resin having a phenylene skeleton (Maywa Kasei Co., Ltd., MEH-7800SS. Hydroxyl equivalent 175, softening point 67 ° C.)

(Inorganic filler)
Inorganic filler: fused spherical silica (average particle size 30 μm)

(Curing accelerator)
Curing accelerator: Triphenylphosphine

(Silane coupling agent)
Silane coupling agent 1: γ-glycidoxypropyltrimethoxysilane Silane coupling agent 2: γ-mercaptopropyltrimethoxysilane

(Other additives)
Colorant: Carbon black Mold release agent: Carnauba wax Flame retardant: Antimony trioxide

Example 1
Epoxy resin 1 7.98 parts by weight Phenolic resin 1 3.37 parts by weight Inorganic filler 85.50 parts by weight Curing accelerator 0.20 parts by weight Silane coupling agent 1 0.30 parts by weight Silane coupling agent 2 0.30 Part by weight Colorant 0.30 part by weight Release agent 0.55 part by weight Flame retardant 1.50 parts by weight are mixed at room temperature with a mixer, melt-kneaded with a heating roll at 80 to 100 ° C., cooled and crushed, and epoxy A resin composition was obtained. It evaluated by the following method using the obtained epoxy resin composition. The evaluation results are shown in Table 1.

  Spiral flow: Using a low-pressure transfer molding machine (KTS-15, manufactured by Kotaki Seiki Co., Ltd.), a spiral flow measurement mold according to EMMI-1-66 was applied at 175 ° C., injection pressure 6.9 MPa, holding pressure The epoxy resin composition was injected under the condition of time 120 seconds, and the flow length was measured. The spiral flow is a fluidity parameter, and the larger the value, the better the fluidity. The unit is cm.

Elastic modulus during heat: Using a transfer molding machine, a test piece of 80 mm × 10 mm × 4 mm was molded at a mold temperature of 175 ° C., an injection pressure of 6.9 MPa, and a curing time of 90 seconds, and post-cured at 175 ° C. for 2 hours. After that, the flexural modulus was measured at 260 ° C. according to JIS K 6911. The unit is MPa (N / mm ² ).

  Solder resistance test 1: Epoxy resin composition using a low pressure transfer molding machine (Daiichi Seiko Co., Ltd., GP-ELF) under conditions of a mold temperature of 180 ° C., an injection pressure of 7.4 MPa, and a curing time of 120 seconds. A lead frame or the like on which a semiconductor element (silicon chip) is mounted is sealed by molding, and 80 pQFP (Cu lead frame, the size is 14 × 20 mm × thickness 2.00 mm, the semiconductor element is 7 × 7 mm × A semiconductor device having a thickness of 0.35 mm and the semiconductor element and the inner lead portion of the lead frame are bonded with a gold wire having a diameter of 25 μm. Six semiconductor devices heat-treated at 175 ° C. for 4 hours as post-cure were humidified for 40 hours at 60 ° C. and 60% relative humidity, and then subjected to IR reflow treatment (260 ° C., according to JEDEC conditions). The presence or absence of peeling and cracks in the semiconductor device was observed with an ultrasonic flaw detector (manufactured by Hitachi Construction Machinery Finetech Co., Ltd., mi-scope 10), and the occurrence of either peeling or cracking was regarded as defective. When the number of defective semiconductor devices is n, n / 6 is displayed. The epoxy resin composition obtained in Example 1 showed a good reliability of 0/6.

  Solder resistance test 2: The test was performed in the same manner as the solder resistance test 1 except that the humidification treatment conditions of the solder resistance test 1 described above were humidified at 60 ° C. and a relative humidity of 60% for 120 hours. The epoxy resin composition obtained in Example 1 showed a good reliability of 0/6.

Examples 2-7, Comparative Examples 1-4
According to the composition of Table 1, an epoxy resin composition was produced in the same manner as in Example 1 and evaluated in the same manner as in Example 1. The evaluation results are shown in the table.

Examples 1 to 7 include a compound represented by the general formula (1) and an epoxy resin (A) composed of impurities thereof, a compound (B) containing two or more phenolic hydroxyl groups, and an inorganic filler (C). The melt viscosity at 150 ° C. of the epoxy resin (A) and L0 / in GPC measurement
The L1 ratio and the type of the compound (B) containing two or more phenolic hydroxyl groups are changed. In any case, the fluidity (spiral flow) is good, the thermal elastic modulus is moderately low, and the solder resistance is high. It is possible to obtain an epoxy resin composition for semiconductor encapsulation having excellent properties. Moreover, since the semiconductor device is sealed with the cured product of the above-described epoxy resin composition for semiconductor sealing, a semiconductor device with excellent reliability can be obtained.

  According to the present invention, it is possible to obtain an epoxy resin composition excellent in the balance between fluidity and solder resistance at a low cost, and a highly reliable semiconductor device in which a semiconductor element is sealed with a cured product thereof. Therefore, it is suitable for semiconductor device sealing, particularly for semiconductor devices for surface mounting using lead-free solder.

It is the figure which showed the cross-section about an example of the semiconductor device using the epoxy resin composition for semiconductor sealing which concerns on this invention. 2 is a GPC chart of epoxy resin 1. 3 is a GPC chart of epoxy resin 2. 3 is a GPC chart of epoxy resin 3. 3 is a GPC chart of epoxy resin 4. 3 is a GPC chart of epoxy resin 5. 3 is a GPC chart of epoxy resin 6.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 Die-bonding material hardening body 3 Die pad 4 Gold wire 5 Lead frame 6 Hardening body of epoxy resin composition for semiconductor sealing

Claims (4)

(A) an epoxy resin composed of a compound represented by the following general formula (1) and its impurities;
(B) a compound containing two or more phenolic hydroxyl groups;
(C) an inorganic filler,
In the melt viscosity measurement at 150 ° C. using an ICI viscometer, the epoxy resin (A) exhibits a melt viscosity of 1.0 dPa · sec or less,
In addition, in gel permeation chromatography (GPC) measurement using an RI detector, the peak top retention time corresponding to n = 1 body of general formula (1) is T1, the detection value is L1, and general formula (1) When the peak top retention time corresponding to n = 2 bodies is T2, and the detection value at the retention time T0 (where T0 = 0.65 × T1 + 0.35 × T2) is L0, the retention time T0 The component detected in (2) is a by-product in producing the compound represented by the general formula (1), and satisfies 0.6 ≦ L0 / L1 ≦ 1.1 An epoxy resin composition for sealing. (However, T0, T1, T2, L0, and L1 are relative values that vary depending on column conditions, and values measured under the same conditions are used.)
(However, in the said General formula (1), R1 and R2 are respectively C1-C6 hydrocarbon groups, and may mutually be same or different. A is an integer of 0-4. And b is an integer of 0 to 3. n is an integer of 0 to 20.) The epoxy resin (A) comprising the compound represented by the general formula (1) and its impurities is an epoxy resin comprising the compound represented by the following general formula (2) and its impurities. The epoxy resin composition for semiconductor encapsulation as described in 2.
(However, in the said General formula (2), n is an integer of 0-20.) The semiconductor encapsulation according to claim 1 or 2, wherein the gel permeation chromatography (GPC) measurement is a measurement using a polystyrene gel column (TSK-GELGMHHR-L manufactured by Tosoh Corporation). Stopping epoxy resin composition. A semiconductor device comprising a semiconductor element sealed with a cured product of the epoxy resin composition for semiconductor sealing according to any one of claims 1 to 3 .