JP5573343B2 - Semiconductor sealing resin composition and semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor sealing resin composition and a semiconductor device.

In recent years, as electronic components such as integrated circuits (ICs), large-scale integrated circuits (LSIs), and very large-scale integrated circuits (VLSIs) and semiconductor devices are becoming more dense and highly integrated, their mounting method is changed from insertion mounting. It is changing to surface mounting. In addition, semiconductor devices represented by surface mount type QFP (Quad Flat Package) and the like have been put into practical use because of demands for miniaturization, weight reduction, and lead pin multi-pinning of semiconductor devices. Since these semiconductor devices have an excellent balance of productivity, cost, reliability, etc., mold molding (sealing) using an epoxy resin composition has become the mainstream.
Conventionally, bromine-containing epoxy resins and antimony oxide have been generally used as flame retardants for the purpose of imparting flame retardancy to semiconductor devices in epoxy resin compositions for sealing. There is a growing movement to regulate the use of halogen-containing compounds that are likely to generate dioxin-like compounds and highly toxic antimony compounds.
Under these circumstances, metal hydroxides such as aluminum hydroxide and magnesium hydroxide have been proposed as flame retardants to replace brominated epoxy resins and antimony compounds. It is easy to cause deterioration of properties, and may not be sufficient in terms of moldability and reliability.
In addition, since lead contained in solder used for conventional mounting is harmful, replacement with lead-free solder is being promoted. The melting point of lead-free solder is higher than that of conventional lead / tin solder, and the temperature during solder mounting such as infrared reflow and solder immersion is increased from the conventional 220 ° C. to 240 ° C. to 240 ° C. to 260 ° C. Due to such an increase in mounting temperature, there is a high possibility that cracks will occur in the resin part during mounting.
Further, since it is necessary to lead the exterior solder plating for the lead frame, a lead frame preliminarily subjected to nickel / palladium plating is being used instead of the exterior solder plating. This nickel / palladium plating has a problem that a conventional sealing material cannot secure sufficient adhesion, and is easily peeled off from the lead frame during mounting.
Semiconductor devices are required to achieve both the above-mentioned environmental friendliness and reliability, especially thin surfaces such as TSOP (thin small outline package) and LQFP (low profile quad flat package). This is an important issue for mounting packages.

From the above situation, biphenylene skeleton-containing phenol aralkyl type epoxy resin, biphenylene skeleton-containing phenol aralkyl are used as epoxy resin compositions for semiconductor encapsulation that can obtain good flame retardancy without adding a flame retardant imparting agent. An epoxy resin composition using a mold curing agent has been proposed (see, for example, Patent Documents 1 and 2).
These epoxy resin compositions have the advantage of being able to obtain a highly reliable semiconductor device with low water absorption, low elastic modulus during heat, high adhesion, excellent flame retardancy, and molding after curing. Since the product is soft and has high lipophilicity, there may be a problem in continuous formability in the sealing process of the semiconductor device, and productivity may be reduced.
For such a problem, a method of adjusting the molecular weight distribution of the curing agent has been proposed (see, for example, Patent Document 3). However, adjustment of the molecular weight distribution described above requires, for example, a step of purifying monomer raw materials in advance of molecular weight classification using a distillation or fractionation column after synthesis or synthesis, after synthesizing a phenol resin. In addition to requiring a large-scale refining facility and a solvent treatment facility, there is a problem that the production cost increases due to a recovery loss.

JP-A-11-140277 Japanese Patent No. 362736 International Publication No. 2005/088783

  Therefore, the present invention has been made in view of such circumstances, and provides a resin composition for semiconductor encapsulation that has good flame resistance and solder resistance, is excellent in continuous moldability, and can be manufactured at low cost. Is.

The resin composition for semiconductor encapsulation of the present invention has the general formula (1)
(In General Formula (1), R1 and R3 are independently a hydrocarbon group having 1 to 10 carbon atoms, and R2 is independently a hydrocarbon group having 1 to 10 carbon atoms or a hydroxyl group. A is an integer of 0 to 3, b and c are integers of 0 to 4, m is an integer of 0 to 10 and includes a component of m ≦ 1, and n is an integer of 0 to 10. (Except for n = 0 only and m = 0 only.)
A phenolic resin having a structure represented by:
Epoxy resin,
An inorganic filler;
A curing accelerator;
With oxidized polyethylene wax,
It is characterized by including.

The resin composition for encapsulating a semiconductor according to the present invention includes a phenol resin including a structure represented by the general formula (1).
The resin composition for semiconductor encapsulation of the present invention is selected from a tetra-substituted phosphonium compound, a phosphobetaine compound, an adduct of a phosphine compound and a quinone compound, and an adduct of a phosphonium compound and a silane compound as a curing accelerator. It contains at least one kind.
The semiconductor device of the present invention is obtained by sealing a semiconductor element with a semiconductor sealing resin composition.

  ADVANTAGE OF THE INVENTION According to this invention, while having favorable flame resistance and solder resistance, it is excellent in fluidity | liquidity and curability, Furthermore, it is excellent in continuous moldability, and can be manufactured at low cost, and the resin composition for semiconductor sealing is provided. .

It is the figure which showed the cross-sectional structure about an example of the semiconductor device using the resin composition for semiconductor sealing which concerns on this invention. 2 is a GPC chart of phenol resin 1. 2 is an FD-MS chart of phenol resin 1. 2 is a GPC chart of phenol resin 2. 3 is a GPC chart of phenol resin 3. 3 is a GPC chart of phenol resin 4.

  DESCRIPTION OF EMBODIMENTS Preferred embodiments of a semiconductor sealing resin composition and a semiconductor device according to the present invention will be described in detail with reference to the drawings. In the description of the drawings, the same reference numerals are assigned to the same elements, and duplicate descriptions are omitted.

The resin composition for semiconductor encapsulation of the present invention comprises a phenol resin containing a structure represented by the general formula (1), an epoxy resin, an inorganic filler, a curing accelerator, and oxidized polyethylene wax. It is a waste.
In the present invention, a phenol resin including a structure represented by the general formula (1) is used. Since the structural unit represented by the repeating number n of the phenol resin has a biphenylene aralkyl skeleton, the resin composition has effects such as improved flame resistance, reduced water absorption, and improved solder resistance. Furthermore, by having a structural unit represented by the number of repetitions m, it is possible to locally increase the density of the phenolic hydroxyl group and to exhibit good reactivity with the epoxy group. As a result, the phenol resin has a low cost. It has the characteristics of having both flame resistance, solder resistance, reactivity and continuous formability.

R1 and R3 in the general formula (1) are hydrocarbon groups having 1 to 10 carbon atoms, which may be the same or different from each other, and are preferably hydrocarbon groups containing an aromatic group. As a result, in addition to the biphenylene skeleton, there are more aromatic rings, and the flame resistance of the cured product of the resin composition using this can be made more excellent. R1 and R3 may be bonded to any position of the benzene ring. a is an integer of 0 to 3, and c is an integer of 0 to 4.
R2 in General formula (1) is a C1-C6 hydrocarbon group or a hydroxyl group, and may be the same or different from each other. R2 may be bonded to any position of the benzene ring. b is an integer of 0-4.

Moreover, n in General formula (1) is an integer of 0-10, and it is desirable that the compound which is n = 1 and 2 is a main component from a fluid viewpoint. Although it does not specifically limit as a lower limit of the content rate of the component which is n = 1 and 2, It is preferable that it is 30 mass% or more with respect to the phenol resin containing the structure represented by General formula (1), 50 More preferably, it is at least mass%. When the lower limit value of the content ratio of the components with n = 1 and 2 is within the above range, the resin composition can exhibit good fluidity. In order to make the content ratio of the components of n = 1 and 2 within the above-mentioned preferable range, it can be adjusted by the method [1] described later.

Further, m in the general formula (1) is an integer of 0 to 10, includes components of m ≦ 1, and is not particularly limited as long as the average value is larger than 0. In general formula (1), m = 0 is a phenol aralkyl resin containing a biphenylene skeleton, which is excellent in flame resistance, low water absorption, and solder crack resistance, but has insufficient reactivity and high lipophilicity. In some cases, the continuous formability is not sufficient. On the other hand, m ≧ 1 and n ≧ 1 have both a biphenylene skeleton and a high-density phenolic hydroxyl group, thereby maintaining good compatibility with the m = 0 component and good reactivity and curing with an epoxy resin. As a result, the resin composition is considered to exhibit good continuous moldability.
In the resin composition for semiconductor encapsulation of the present invention, the phenol resin including the structure represented by the general formula (1) preferably includes a phenol resin of 1 ≦ m ≦ 10 and a phenol resin of m = 0. .

Moreover, the phenol resin containing the structure represented by the general formula (1) has a higher viscosity of the phenol resin itself as the value of m is larger, that is, as the number of high-density phenolic hydroxyl groups is increased. Sexuality is impaired. The phenol resin including the structure represented by the general formula (1) preferably has components of m = 0 and 1 as main components from the viewpoint of achieving both continuous moldability and fluidity.
The content ratio of the “1 ≦ m ≦ 10” component contained in the total mass of the phenol resin including the structure represented by the general formula (1) is (A) mass%, and the content ratio of the “m = 0” component is ( When B)% by mass, the component ratio A / B is preferably 0.05 or more and 1.5 or less, and more preferably 0.1 or more and 1 or less. When the lower limit value of the component ratio A / B is within the above range, the resin composition can exhibit good curability and continuous moldability. When the upper limit value of the component ratio A / B is within the above range, the resin composition can exhibit good fluidity. In order to make the component ratio A / B within the above-mentioned preferable range, it can be adjusted by the method [2] described later.
In particular, the content ratio of the components “1 ≦ m ≦ 10 and n = 1 to 3” contained in the total mass of the phenol resin including the structure represented by the general formula (1) is (a) mass%, “m = When the content ratio of the component “0 and n = 1 to 3” is (b) mass%, the component ratio a / b is preferably 0.05 or more and 0.55 or less, and 0.1 or more and 0.4 or less. It is more preferable that When the lower limit value of the component ratio a / b is within the above range, the resin composition can exhibit good curability and continuous moldability. When the upper limit value of the component ratio a / b is within the above range, the resin composition can exhibit good fluidity. In order to make the component ratio a / b within the above-mentioned preferable range, it can be adjusted by the method [2] described later.

  In the case of the above phenol resin synthesis reaction, the obtained phenol resin contains n = 0 component in the general formula (1) in addition to the phenol resin including the structure represented by the general formula (1). Although the content is not particularly limited, it is preferably 30% by mass or less, more preferably 25% by mass or less, with respect to the phenol resin including the structure represented by the general formula (1). When the upper limit is within the above range, the resulting resin composition has good solder resistance and flame resistance. In order to make the content rate of n = 0 component into the above-mentioned preferable range, it can adjust by the method [3] mentioned later.

The content ratio of m = 0 component and 1 ≦ m ≦ 10 component in the general formula (1) can be calculated as follows. Each component corresponding to the peak detected from the ratio of the detected peak area is obtained by performing gel permeation chromatography (GPC) measurement of the phenol resin to determine the polystyrene equivalent molecular weight of each component corresponding to the detected peak. The content ratio (mass%) of is calculated.
The gel permeation chromatography (GPC) measurement in the present invention is performed as follows. The GPC apparatus is composed of a pump, an injector, a guard column, a column, and a detector, and tetrahydrofuran (THF) is used as a solvent. The flow rate of the pump is measured at 0.5 ml / min. A flow rate higher than this is not preferable because the detection accuracy of the target molecular weight is lowered. In order to accurately measure at the above flow rate, it is necessary to use a pump with good flow rate accuracy, and the flow rate accuracy is preferably 0.10% or less. A commercially available guard column (for example, TSK GUARDCOLUMN HHR-L: diameter 6.0 mm, tube length 40 mm) manufactured by Tosoh Corporation, and a commercially available polystyrene gel column (TSK-GEL GMHHR- manufactured by Tosoh Corporation) are used for the guard column. L: diameter 7.8 mm, tube length 30 mm) are connected in series. A differential refractometer (RI detector, for example, a differential refractive index (RI) detector W2414 manufactured by WATERS) is used as the detector. Prior to measurement, the guard column, the column, and the inside of the detector are kept stable at 40 ° C. As a sample, a THF solution of the above phenol resin adjusted to a concentration of 3 to 4 mg / ml is prepared, and this is injected from about 50 to 150 μl of an injector for measurement. In analyzing the sample, a calibration curve prepared from a monodisperse polystyrene (hereinafter referred to as PS) standard sample is used. For the calibration curve, a logarithmic value of the molecular weight of PS and the peak detection time (retention time) of PS are plotted, and a regression of the cubic equation is used. As standard PS samples for preparing calibration curves, Shodex Standard SL-105 series product numbers S-1.0 (peak molecular weight 1060), S-1.3 (peak molecular weight 1310), S-2 manufactured by Showa Denko K.K. 0.0 (peak molecular weight 1990), S-3.0 (peak molecular weight 2970), S-4.5 (peak molecular weight 4490), S-5.0 (peak molecular weight 5030), S-6.9 (peak molecular weight 6930) ), S-11 (peak molecular weight 10700), S-20 (peak molecular weight 19900). For identifying the peak position of m = 0 component, a commercially available biphenylene skeleton-containing phenol aralkyl resin (for example, MEH-7851 manufactured by Meiwa Kasei Co., Ltd.) is used. For identifying the peak position of n = 0 component, commercially available A triphenylpropane type phenol resin (for example, MEH-7500, manufactured by Meiwa Kasei Co., Ltd.) is measured.

  The phenol resin may contain a structure other than the structure represented by the general formula (1), and is particularly limited as long as it is a structure in which a divalent hydrocarbon group is bonded to an aromatic hydrocarbon having a hydroxyl group. Is not to be done. For example, examples of the aromatic hydrocarbon having a hydroxyl group include structures such as phenol, dihydroxybenzene, trihydroxybenzene, hydroxynaphthalene, dihydroxynaphthalene, trihydroxynaphthalene, hydroxyanthracene, and dihydroxyanthracene. As methylene group, ethylidene group, isopropylidene group, benzylidene group, phenylethylidene group, phenylenebismethylene (xylylene) group, phenylenebisethylidene group, biphenylenebismethylene group, biphenylenebisethylidene group, naphthylenebismethylene group, naphthylene Examples thereof include a bisethylidene group.

  The phenol resin containing the structure represented by the general formula (1) used in the resin composition for encapsulating a semiconductor of the present invention includes, for example, a biphenylene compound represented by the following general formula (2), and the following general formula (3). It can obtain by reacting with the hydroxybenzaldehyde compound represented by these, a phenol compound, and an acidic catalyst.

(In General Formula (2), X represents a hydroxyl group, a halogen atom, or an alkoxy group having 1 to 4 carbon atoms. R3 is independently a hydrocarbon group having 1 to 10 carbon atoms, and c is 0. It is an integer of ~ 4.)

(In general formula (3), R2 is a C1-C10 hydrocarbon group or a hydroxyl group mutually independently, and b is an integer of 0-4.)

The biphenylene compound used for the raw material of the phenol resin containing the structure represented by the general formula (1) is not particularly limited as long as it is a chemical structure represented by the general formula (2).
For example, 4,4′-bischloromethylbiphenyl, 4,4′-bisbromomethylbiphenyl, 4,4′-bisiodomethylbiphenyl, 4,4′-bishydroxymethylbiphenyl, 4,4′-bismethoxymethylbiphenyl 3,3 ′, 5,5′-tetramethyl-4,4′-bischloromethylbiphenyl, 3,3 ′, 5,5′-tetramethyl-4,4′-bisbromomethylbiphenyl, 3,3 ', 5,5'-tetramethyl-4,4'-bisiodomethylbiphenyl, 3,3', 5,5'-tetramethyl-4,4'-bishydroxymethylbiphenyl, 3,3 ', 5 5′-tetramethyl-4,4′-bismethoxymethylbiphenyl and the like can be mentioned.
When X is a halogen atom, hydrogen halide produced as a by-product during the reaction acts as an acidic catalyst, so there is no need to add an acidic catalyst in the reaction system, and a small amount of water can be added. The reaction can be started immediately. Among these, 4,4′-bismethoxymethylbiphenyl and 4,4′-bischloromethylbiphenyl can be obtained relatively inexpensively from the viewpoint of availability. These may be used alone or in combination of two or more.

The hydroxybenzaldehyde used for the raw material of the phenol resin containing the structure represented by the general formula (1) is not particularly limited as long as it is a chemical structure represented by the general formula (3). Specifically, o-hydroxybenzaldehyde, m-hydroxybenzaldehyde, p-hydroxybenzaldehyde, 2,4-dihydroxybenzaldehyde, 2,5-dihydroxybenzaldehyde, 3,5-di-tert-butyl-4-hydroxybenzaldehyde, 2 -Hydroxy-5-methylbenzaldehyde and the like. Among these, o-hydroxybenzaldehyde is preferable because it is easily available industrially. These may be used alone or in combination of two or more.

As a phenol compound used for manufacture of the phenol resin containing the structure represented by the general formula (1), for example, phenol, o-cresol, p-cresol, m-cresol, phenylphenol, ethylphenol, n-propylphenol , Iso-propylphenol, t-butylphenol, xylenol, methylpropylphenol, methylbutylphenol, dipropylphenol, dibutylphenol, nonylphenol, mesitol, 2,3,5-trimethylphenol, 2,3,6-trimethylphenol, etc. However, it is not limited to these.
Among these, from the viewpoint of cost, phenol and o-cresol are preferable, and phenol is more preferable from the viewpoint of reactivity with the epoxy resin. These may be used alone or in combination of two or more.

The method for synthesizing the phenol resin used in the present invention is not particularly limited. For example, the total amount of biphenylene compounds and hydroxybenzaldehydes is 0.1 to 0.8 mol per 1 mol of the phenol compound, and the biphenylene compound. / Hydroxybenzaldehyde ratio (mass ratio) 1 to 10, acidic catalyst such as formic acid, oxalic acid, p-toluenesulfonic acid, hydrochloric acid, sulfuric acid, phosphoric acid, acetic acid, Lewis acid, etc. The reaction is carried out for 2 to 20 hours at a temperature of 180 ° C. while discharging the generated gas and moisture out of the system by nitrogen flow, and unreacted phenol, reaction byproducts (for example, hydrogen halide and methanol) remaining after the reaction, catalyst (For example, hydrochloric acid) can be obtained by distilling off by a method such as vacuum distillation or steam distillation.

Here, examples of a method for bringing the phenol resin into the above-described preferable range include the following methods.
[1] In order to make the content ratio of the components of n = 1 to 2 within the above-mentioned preferable range, the blending amount of the acid catalyst is decreased, the charging ratio of the phenol compound / biphenylene compound is increased, the reaction temperature is decreased, etc. By the method, the content ratio of the component of n = 1 to 2 can be increased.
[2] A method of increasing the biphenylene compound / hydroxybenzaldehyde ratio or adding a separately synthesized m = 0 component before and after the above synthesis in order to make the above component ratio A / B within the above preferred range. Thus, the component ratio A / B can be reduced.
[3] In order to make the content ratio of the n = 0 component within the above-mentioned preferable range, hydroxybenzaldehyde is gradually added to the reaction system from the middle to the end of the reaction while the phenol compound and the biphenylene compound are subjected to a condensation reaction using an acidic catalyst. You may take the method of adding to. In this case, the progress of the reaction is performed by sampling the water, hydrogen halide, and alcohol gas generated by the reaction of the biphenylene compound and phenol, or by sampling the product in the middle of the reaction and measuring the molecular weight by gel permeation chromatography. Can be confirmed.

In the resin composition for semiconductor encapsulation of the present invention, other curing agents can be used in combination as long as the effects of using the phenol resin are not impaired.
Examples of the curing agent that can be used in combination include a polyaddition type curing agent, a catalyst type curing agent, and a condensation type curing agent.
Examples of the polyaddition type curing agent include aliphatic polyamines such as diethylenetriamine, triethylenetetramine, and metaxylylenediamine, aromatic polyamines such as diaminodiphenylmethane, m-phenylenediamine, and diaminodiphenylsulfone, dicyandiamide, organic Polyamine compounds including acid dihydralazide; alicyclic acid anhydrides such as hexahydrophthalic anhydride and methyltetrahydrophthalic anhydride; aromatic acid anhydrides such as trimellitic anhydride, pyromellitic anhydride and benzophenonetetracarboxylic acid Acid anhydride containing; polyphenol compound such as novolac type phenol resin and phenol polymer; polymercaptan compound such as polysulfide, thioester and thioether; isocyanate prepolymer, Isocyanate compounds such as click isocyanate; and organic acids such as carboxylic acid-containing polyester resins.

Examples of the catalyst-type curing agent include tertiary amine compounds such as benzyldimethylamine and 2,4,6-trisdimethylaminomethylphenol; imidazole compounds such as 2-methylimidazole and 2-ethyl-4-methylimidazole; Examples include Lewis acids such as BF ₃ complex.
Examples of the condensation type curing agent include phenolic resin-based curing agents such as novolak type phenolic resin and resol type phenolic resin; urea resin such as methylol group-containing urea resin; melamine resin such as methylol group-containing melamine resin, and the like. Can be mentioned.

  Among these, a phenol resin-based curing agent is preferable from the viewpoint of balance between flame resistance, moisture resistance, electrical characteristics, curability, storage stability, and the like. The phenol resin-based curing agent is a monomer, oligomer, or polymer in general having two or more phenolic hydroxyl groups in one molecule, and its molecular weight and molecular structure are not particularly limited. For example, phenol novolak resin, cresol novolak Resin, novolak resin such as naphthol novolak resin; polyfunctional phenol resin such as triphenolmethane phenol resin; modified phenol resin such as terpene modified phenol resin and dicyclopentadiene modified phenol resin; phenylene skeleton and / or biphenylene skeleton Aralkyl-type resins such as phenol aralkyl resins having phenylene and / or naphthol aralkyl resins having a biphenylene skeleton; bisphenol compounds such as bisphenol A and bisphenol F The recited, they may be used in combination of two or more be used one kind alone. Among these, the hydroxyl equivalent is preferably 90 g / eq or more and 250 g / eq or less from the viewpoint of curability.

In the case of using such other curing agents in combination, the blending ratio of the phenol resin containing the structure represented by the general formula (1) is preferably 15% by mass or more based on the total curing agent, It is more preferably 25% by mass or more, and particularly preferably 35% by mass or more. When the blending ratio is within the above range, it is possible to obtain the effect of improving the flame resistance and solder resistance while maintaining good fluidity and curability.
Although it does not specifically limit about the lower limit of the compounding ratio of the whole hardening | curing agent, It is preferable that it is 0.8 mass% or more in all the resin compositions, and it is more preferable that it is 1.5 mass% or more. When the lower limit value of the blending ratio is within the above range, sufficient fluidity can be obtained. Further, the upper limit of the blending ratio of the entire curing agent is not particularly limited, but is preferably 10% by mass or less, and more preferably 8% by mass or less in the entire resin composition. When the upper limit of the blending ratio is within the above range, good solder resistance can be obtained.

Examples of the epoxy resin used in the resin composition for semiconductor encapsulation of the present invention include crystalline epoxy resins such as biphenyl type epoxy resin, bisphenol type epoxy resin, and stilbene type epoxy resin; phenol novolac type epoxy resin, cresol novolac type Novolak type epoxy resins such as epoxy resins; polyfunctional epoxy resins such as triphenolmethane type epoxy resins and alkyl-modified triphenolmethane type epoxy resins; phenol aralkyl type epoxy resins having a phenylene skeleton, phenol aralkyl type epoxy resins having a biphenylene skeleton Aralkyl-type epoxy resins such as: dihydroxynaphthalene-type epoxy resins, naphthols such as epoxy resins obtained by glycidyl etherification of dihydroxynaphthalene dimers Epoxy resins; triazine nucleus-containing epoxy resins such as triglycidyl isocyanurate and monoallyl diglycidyl isocyanurate; and bridged cyclic hydrocarbon compound-modified phenol type epoxy resins such as dicyclopentadiene-modified phenol type epoxy resins. It is not limited.
Aralkyl type epoxy resins such as phenol aralkyl type epoxy resins having a phenylene skeleton, phenol aralkyl type epoxy resins having a biphenylene skeleton, and these epoxy resins are preferable in terms of excellent balance of solder resistance, flame resistance and continuous moldability, A crystalline epoxy resin is preferable in that it has excellent fluidity. In addition, from the viewpoint of moisture resistance reliability of the obtained resin composition for semiconductor encapsulation, it is preferable to contain as few ionic impurities as Na ions and Cl ions, and from the viewpoint of curability of the semiconductor resin composition, an epoxy resin The epoxy equivalent of is preferably 100 g / eq or more and 500 g / eq or less.

The compounding amount of the epoxy resin in the resin composition for semiconductor encapsulation is preferably 2% by mass or more, more preferably 4% by mass or more, based on the total mass of the resin composition for semiconductor encapsulation. When the lower limit is within the above range, the resulting resin composition has good fluidity. Moreover, the compounding quantity of the epoxy resin in the resin composition for semiconductor encapsulation is preferably 15% by mass or less, more preferably 13% by mass or less, with respect to the total mass of the resin composition for semiconductor encapsulation. . When the upper limit is within the above range, the resulting resin composition has good solder resistance.
The phenol resin and the epoxy resin have an equivalent ratio (EP) / (OH) between the number of epoxy groups (EP) of all epoxy resins and the number of phenolic hydroxyl groups (OH) of all phenol resins, of 0.8 or more, It is preferable to mix | blend so that it may become 1.3 or less. When the equivalent ratio is within the above range, sufficient curing characteristics can be obtained when the resulting resin composition is molded.

As the inorganic filler used in the resin composition for semiconductor encapsulation of the present invention, inorganic fillers generally used in the field can be used.
Examples thereof include fused silica, spherical silica, crystalline silica, alumina, silicon nitride, and aluminum nitride. The particle size of the inorganic filler is desirably 0.01 μm or more and 150 μm or less from the viewpoint of filling properties in the mold cavity.
The amount of the inorganic filler in the resin composition for semiconductor encapsulation is preferably 80% by mass or more, more preferably 83% by mass or more, based on the total mass of the resin composition for semiconductor encapsulation. Preferably it is 86 mass% or more. When the lower limit value is within the above range, an increase in moisture absorption and a decrease in strength due to curing of the resulting resin composition can be reduced, and therefore a cured product having good solder crack resistance can be obtained.
The amount of the inorganic filler in the resin composition for semiconductor encapsulation is preferably 93% by mass or less, more preferably 91% by mass or less, with respect to the total mass of the resin composition for semiconductor encapsulation. More preferably, it is 90 mass% or less. When the upper limit is within the above range, the resulting resin composition has good fluidity and good moldability.
In addition, when using inorganic flame retardants such as metal hydroxides such as aluminum hydroxide and magnesium hydroxide, zinc borate, zinc molybdate and antimony trioxide described later, these inorganic flame retardants and the above It is desirable that the total amount of the inorganic filler is within the above range.

The curing accelerator used in the present invention only needs to promote the reaction between the epoxy group of the epoxy resin and the phenolic hydroxyl group of the compound containing two or more phenolic hydroxyl groups, and is a general epoxy resin composition for semiconductor encapsulation. You can use what is used for.
Specific examples include phosphorus atom-containing curing accelerators such as organic phosphines, tetra-substituted phosphonium compounds, phosphobetaine compounds, adducts of phosphine compounds and quinone compounds, adducts of phosphonium compounds and silane compounds; 1,8-diazabicyclo Nitrogen atom-containing curing accelerators such as (5,4,0) undecene-7, benzyldimethylamine, 2-methylimidazole and the like can be mentioned. Among these, phosphorus atom-containing curing accelerators can obtain preferable curability. . From the viewpoint of the balance between fluidity and curability, tetra-substituted phosphonium compound, phosphobetaine compound, adduct of phosphine compound and quinone compound, adduct of phosphonium compound and silane compound, etc., with phosphorus atom-containing curing acceleration An agent is more preferable. Tetra-substituted phosphonium compounds are particularly preferred when emphasizing the point of fluidity, and phosphobetaine compounds and phosphine compounds when emphasizing the low thermal modulus of the cured resin thermal composition of the semiconductor sealing resin composition. An adduct with a quinone compound is particularly preferred, and an adduct of a phosphonium compound and a silane compound is particularly preferred when importance is attached to latent curing properties.
Examples of the organic phosphine that can be used in the semiconductor sealing resin composition of the present invention include a first phosphine such as ethylphosphine and phenylphosphine; a second phosphine such as dimethylphosphine and diphenylphosphine; trimethylphosphine, triethylphosphine, and tributyl. Third phosphine such as phosphine and triphenylphosphine can be mentioned.

Examples of the tetra-substituted phosphonium compound that can be used in the semiconductor sealing resin composition of the present invention include compounds represented by the following general formula (4).
(In the general formula (4), P represents a phosphorus atom. R4, R5, R6 and R7 each represents an aromatic group or an alkyl group. A represents a functional group selected from a hydroxyl group, a carboxyl group and a thiol group.) Represents an anion of an aromatic organic acid having at least one of the following: AH is an aromatic organic acid having at least one functional group selected from a hydroxyl group, a carboxyl group, and a thiol group in the aromatic ring X and y are integers of 1 to 3, z is an integer of 0 to 3, and x = y.
Although the compound represented by General formula (4) is obtained as follows, for example, it is not limited to this. First, a tetra-substituted phosphonium halide, an aromatic organic acid and a base are mixed in an organic solvent and mixed uniformly to generate an aromatic organic acid anion in the solution system. Then, when water is added, the compound represented by the general formula (4) can be precipitated. In the compound represented by the general formula (4), R4, R5, R6 and R7 bonded to the phosphorus atom are phenyl groups, and AH is a compound having a hydroxyl group in an aromatic ring, that is, phenols, and A Is preferably an anion of the above phenols.

Examples of the phosphobetaine compound that can be used in the resin composition for semiconductor encapsulation of the present invention include compounds represented by the following general formula (5).
(However, in the said General formula (5), X1 represents a C1-C3 alkyl group, Y1 represents a hydroxyl group. F is an integer of 0-5, and g is an integer of 0-4.)
The compound represented by the general formula (5) is obtained, for example, as follows.
First, it is obtained through a step of bringing a triaromatic substituted phosphine, which is a third phosphine, into contact with a diazonium salt and replacing the triaromatic substituted phosphine with a diazonium group of the diazonium salt. However, the present invention is not limited to this.

Examples of the adduct of a phosphine compound and a quinone compound that can be used in the semiconductor sealing resin composition of the present invention include compounds represented by the following general formula (6).
(However, in the said General formula (6), P represents a phosphorus atom. R8, R9, and R10 represent a C1-C12 alkyl group or a C6-C12 aryl group, and even if it is mutually the same, R11, R12 and R13 each represent a hydrogen atom or a hydrocarbon group having 1 to 12 carbon atoms, and may be the same or different from each other, and R11 and R12 are bonded to form a cyclic structure. May be.)

Examples of the phosphine compound used for the adduct of the phosphine compound and the quinone compound include aromatic compounds such as triphenylphosphine, tris (alkylphenyl) phosphine, tris (alkoxyphenyl) phosphine, trinaphthylphosphine, and tris (benzyl) phosphine. Those having a substituent or a substituent such as an alkyl group or an alkoxyl group are preferred, and examples of the substituent such as an alkyl group and an alkoxyl group include those having 1 to 6 carbon atoms. From the viewpoint of availability, triphenylphosphine is preferable.
In addition, examples of the quinone compound used for the adduct of the phosphine compound and the quinone compound include o-benzoquinone, p-benzoquinone, and anthraquinones. Among them, p-benzoquinone is preferable from the viewpoint of storage stability.
As a method for producing an adduct of a phosphine compound and a quinone compound, the adduct can be obtained by contacting and mixing in a solvent capable of dissolving both organic tertiary phosphine and benzoquinone. As the solvent, ketones such as acetone and methyl ethyl ketone which have low solubility in the adduct are preferable. However, the present invention is not limited to this.
In the compound represented by the general formula (6), R8, R9 and R10 bonded to the phosphorus atom are phenyl groups, and R11, R12 and R13 are hydrogen atoms, that is, 1,4-benzoquinone and triphenyl A compound to which phosphine has been added is preferable in that it reduces the thermal elastic modulus of the cured product of the resin composition for semiconductor encapsulation.

Examples of the adduct of a phosphonium compound and a silane compound that can be used in the resin composition for semiconductor encapsulation of the present invention include compounds represented by the following general formula (7).
(In the general formula (7), P represents a phosphorus atom and Si represents a silicon atom. R14, R15, R16 and R17 are each an organic group having an aromatic ring or a heterocyclic ring, or an aliphatic group. X2 is an organic group bonded to the groups Y2 and Y3, where X3 is an organic group bonded to the groups Y4 and Y5. And Y3 represent a group formed by releasing a proton from a proton donating group, and groups Y2 and Y3 in the same molecule are bonded to a silicon atom to form a chelate structure.Y4 and Y5 are proton donating groups. The group represents a group formed by releasing a proton, and groups Y4 and Y5 in the same molecule are bonded to a silicon atom to form a chelate structure.X2 and X3 may be the same or different from each other. May have I, Y2, Y3, Y4, and Y5 is .Z1 may be the same or different from each other is an organic group or an aliphatic group, an aromatic ring or a heterocyclic ring.)
In the general formula (7), as R14, R15, R16 and R17, for example, phenyl group, methylphenyl group, methoxyphenyl group, hydroxyphenyl group, naphthyl group, hydroxynaphthyl group, benzyl group, methyl group, ethyl group, Examples thereof include n-butyl group, n-octyl group and cyclohexyl group. Among these, aromatic group having a substituent such as phenyl group, methylphenyl group, methoxyphenyl group, hydroxyphenyl group, hydroxynaphthyl group or the like. A substituted aromatic group is more preferred.

Moreover, in General formula (7), X2 is an organic group couple | bonded with Y2 and Y3. Similarly, X3 is an organic group that binds to groups Y4 and Y5. Y2 and Y3 are groups formed by proton-donating groups releasing protons, and groups Y2 and Y3 in the same molecule are combined with a silicon atom to form a chelate structure. Similarly, Y4 and Y5 are groups formed by proton-donating groups releasing protons, and groups Y4 and Y5 in the same molecule are combined with a silicon atom to form a chelate structure. The groups X2 and X3 may be the same or different from each other, and the groups Y2, Y3, Y4, and Y5 may be the same or different from each other. The groups represented by -Y2-X2-Y3- and -Y4-X3-Y5- in general formula (7) are composed of groups in which a proton donor releases two protons. Examples of proton donors include catechol, pyrogallol, 1,2-dihydroxynaphthalene, 2,3-dihydroxynaphthalene, 2,2′-biphenol, 1,1′-bi-2-naphthol, and salicylic acid. 1-hydroxy-2-naphthoic acid, 3-hydroxy-2-naphthoic acid, chloranilic acid, tannic acid, 2-hydroxybenzyl alcohol, 1,2-cyclohexanediol, 1,2-propanediol and glycerin. Of these, catechol, 1,2-dihydroxynaphthalene, and 2,3-dihydroxynaphthalene are more preferable.
Z1 in the general formula (7) represents an organic group having an aromatic ring or a heterocyclic ring or an aliphatic group, and specific examples thereof include a methyl group, an ethyl group, a propyl group, a butyl group, and a hexyl group. And aliphatic hydrocarbon groups such as octyl group, aromatic hydrocarbon groups such as phenyl group, benzyl group, naphthyl group and biphenyl group, glycidyloxypropyl group, mercaptopropyl group, aminopropyl group and vinyl group Among them, a methyl group, an ethyl group, a phenyl group, a naphthyl group, and a biphenyl group are more preferable from the viewpoint of thermal stability.

  As a method for producing an adduct of a phosphonium compound and a silane compound, a silane compound such as phenyltrimethoxysilane and a proton donor such as 2,3-dihydroxynaphthalene are added to a flask containing methanol, and then dissolved. Sodium methoxide-methanol solution is added dropwise with stirring. Furthermore, when a solution prepared by dissolving a tetra-substituted phosphonium halide such as tetraphenylphosphonium bromide prepared in methanol in methanol is added dropwise with stirring at room temperature, crystals are precipitated. The precipitated crystals are filtered, washed with water, and vacuum dried to obtain an adduct of a phosphonium compound and a silane compound. However, it is not limited to this.

  The blending ratio of the curing accelerator that can be used in the resin composition for semiconductor encapsulation of the present invention is more preferably 0.1% by mass or more and 1% by mass or less in the total resin composition. When the blending amount of the curing accelerator is within the above range, sufficient curability can be obtained. Moreover, sufficient fluidity | liquidity can be acquired as the compounding quantity of a hardening accelerator is in the said range.

The oxidized polyethylene wax (E) used in the present invention generally has a polar group composed of a carboxylic acid or the like and a nonpolar group composed of a long carbon chain, so that the polar group is oriented on the resin cured product side during molding. On the other hand, the nonpolar group acts as a mold release agent by being oriented on the mold side. The oxidized polyethylene wax (E) used in the present invention is not particularly limited. For example, an oxide of polyethylene wax produced by a low pressure polymerization method, an oxide of polyethylene wax produced by a high pressure polymerization method, And oxides of high density polyethylene polymers. Among these, oxides of high density polyethylene polymers are more preferable. These oxidized polyethylene waxes may be used alone or in combination of two or more.

  The dropping point of the oxidized polyethylene wax (E) used in the present invention is preferably 100 ° C. or higher and 140 ° C. or lower, more preferably 110 ° C. or higher and 130 ° C. or lower. The dropping point can be measured by a method based on ASTM D127. Specifically, using a metal nipple, it is measured as the temperature at which molten wax first drops from the metal nipple. In the following examples, it can be measured by the same method. When the dropping point of the oxidized polyethylene wax (E) is within the above range, the oxidized polyethylene wax (E) is excellent in thermal stability, and the oxidized polyethylene wax (E) is hardly seized during continuous molding. Therefore, it is excellent in the mold release property of the resin cured material from a metal mold | die, and is excellent also in continuous moldability. Furthermore, when it is within the above range, the oxidized polyethylene wax (E) is sufficiently melted when the resin composition is cured. Thereby, the oxidized polyethylene wax (E) is dispersed substantially uniformly in the cured resin. Therefore, segregation of the oxidized polyethylene wax (E) on the surface of the cured resin can be suppressed, and deterioration of the mold stain and the appearance of the cured resin can be reduced.

  The acid value of the oxidized polyethylene wax (E) used in the present invention is preferably 10 mgKOH / g or more and 50 mgKOH / g or less, more preferably 15 mgKOH / g or more and 40 mgKOH / g or less. The acid value affects the compatibility with the cured resin. The acid value can be measured by a method based on JIS K 3504. Specifically, it is measured as the number of milligrams of potassium hydroxide required to neutralize free fatty acids contained in 1 g of waxes. In the following examples, it can be measured by the same method. When the acid value is within the above range, the oxidized polyethylene wax (E) is in a compatible state with the epoxy resin matrix in the cured resin. Thereby, the oxidized polyethylene wax (E) and the epoxy resin matrix do not cause phase separation. Therefore, the segregation of the oxidized polyethylene wax (E) on the surface of the cured resin product is suppressed, and deterioration of the mold stain and the appearance of the cured resin product can be reduced. Furthermore, since the oxidized polyethylene wax (E) is present on the surface of the cured resin, the mold release property of the cured resin from the mold is excellent. On the other hand, if the compatibility between the oxidized polyethylene wax (E) and the epoxy resin matrix is too high, the oxidized polyethylene wax (E) cannot ooze out on the surface of the cured resin, and sufficient releasability can be secured. There are cases where it is not possible.

  The number average molecular weight of the oxidized polyethylene wax (E) used in the present invention is preferably 500 or more and 5000 or less, more preferably 1000 or more and 4000 or less, from the viewpoint of the effect of reducing warpage. The number average molecular weight can be calculated by polystyrene conversion using a GPC apparatus such as HLC-8120 manufactured by Tosoh Corporation. In the following examples, it can be measured by the same method. When the number average molecular weight is within the above range, the oxidized polyethylene wax (E) and the epoxy resin matrix are in a preferable compatible state. Therefore, the cured resin is excellent in releasability from the mold. On the other hand, if the compatibility between the oxidized polyethylene wax (E) and the epoxy resin matrix is high, sufficient releasability may not be obtained. On the other hand, if the compatibility is low, phase separation occurs, which may cause mold stains and deterioration of the appearance of the cured resin.

The density of the oxidized polyethylene wax (E) used in the present invention is preferably 0.94 g / cm ³ or more and 1.03 g / cm ³ or less, more preferably 0.97 g / cm ³ or more and 0.99 g / cm ^3. It is as follows. The density can be calculated by density measurement at 20 ° C., for example, by a floating method based on ASTM D1505. In the following examples, it can be measured by the same method. When the density is within the above range, the oxidized polyethylene wax (E) is excellent in thermal stability, and the oxidized polyethylene wax (E) is hardly seized during continuous molding. Therefore, it is excellent in the mold release property of the resin cured material from a metal mold | die, and is excellent also in continuous moldability. Furthermore, when it is within the above range, the oxidized polyethylene wax (E) is sufficiently melted when the resin composition is cured. Thereby, the oxidized polyethylene wax (E) is dispersed substantially uniformly in the cured resin. Therefore, segregation of the oxidized polyethylene wax (E) on the surface of the cured resin product is suppressed, and the deterioration of the appearance of the mold and the cured resin product can be reduced.

  The average particle diameter of the oxidized polyethylene wax (E) used in the present invention is preferably 20 μm or more and 70 μm or less, more preferably 30 μm or more and 60 μm or less. The average particle size can be measured using, for example, a laser diffraction particle size distribution measuring device such as SALD-7000 manufactured by Shimadzu Corporation as a solvent and water, and a mass-based 50% particle size as an average particle size. it can. In the following examples, it can be measured by the same method. When the average particle size is within the above range, the oxidized polyethylene wax (E) is in a preferable compatible state with the epoxy resin matrix in the cured resin. Thereby, the oxidized polyethylene wax (E) is present on the surface of the cured resin, and the mold release property of the cured resin from the mold is excellent. On the other hand, if the compatibility with the epoxy resin matrix is too high, it cannot be oozed out on the surface of the cured resin and sufficient releasability cannot be ensured. Furthermore, since the oxidized polyethylene wax (E) and the epoxy resin matrix are in a preferable compatible state, segregation of the oxidized polyethylene wax (E) on the surface of the resin cured product is suppressed, and mold contamination and the appearance of the resin cured product are suppressed. Can be reduced. Furthermore, when it is in the above range, the oxidized polyethylene wax (E) is sufficiently melted when the resin composition is cured. Therefore, the resin composition is excellent in fluidity. Moreover, it is preferable that the content rate of the particle | grains with a particle size of 106 micrometers or more in a total oxidation polyethylene wax (E) is 0.1 mass% or less. This content ratio can be measured using, for example, a standard sieve having an opening of 105 μm according to JIS Z8801. In the following examples, it can be measured by the same method. If it is said content rate, an oxidation polyethylene wax (E) will disperse | distribute substantially uniformly, and the deterioration of the external appearance of the stain | pollution | contamination of a metal mold | die or a resin cured material can be suppressed. In addition, when the resin composition is cured, the oxidized polyethylene wax (E) is sufficiently melted, so that the fluidity is excellent.

  The blending ratio of the oxidized polyethylene wax (E) used in the present invention is preferably 0.01% by mass or more and 1% by mass or less, more preferably 0.15% by mass or more and 0.5% by mass in the resin composition. % Or less. It is excellent in the mold release property of the resin cured material from a metal mold | die as it is said mixture ratio. Moreover, when it is within the above range, the adhesion between the cured resin and the lead frame member is not impaired, and the occurrence of peeling between the cured resin and the lead frame member during the soldering process can be suppressed. Furthermore, when it is within the above range, deterioration of mold stains and appearance of the cured resin can be suppressed.

  The production method of the oxidized polyethylene wax (E) used in the present invention is not particularly limited. For example, a polyethylene wax or a high-density polyethylene polymer produced by a known method such as a low pressure polymerization method or a high pressure polymerization method is used. It can be obtained by oxidation according to a known oxidation method. The polyethylene oxide wax (E) used in the present invention is commercially available, and if necessary, a rotating disk mill (pin mill), a screen mill (hammer mill), a centrifugal mill (turbo mill), a jet mill. It can be used by pulverizing and adjusting the particle size using a pulverizer.

  Other release agents can be used in combination as long as the effect of using the oxidized polyethylene wax (E) used in the present invention is not impaired. Examples of release agents that can be used in combination include natural waxes such as carnauba wax, and metal salts of higher fatty acids such as zinc stearate.

In the present invention, a compound in which a hydroxyl group is bonded to each of two or more adjacent carbon atoms constituting an aromatic ring can be used. A compound (F) in which a hydroxyl group is bonded to each of two or more adjacent carbon atoms constituting an aromatic ring (hereinafter also referred to as “compound (F)”) can be used in the general formula (1). Even when a phosphorus atom-containing curing accelerator having no latent property is used as a curing accelerator that promotes a crosslinking reaction between a phenol resin and an epoxy resin containing the represented structure, the resin compound is melt kneaded. Reaction can be suppressed, and the resin composition for semiconductor encapsulation can be obtained stably.
The compound (F) also has an effect of lowering the melt viscosity of the semiconductor sealing resin composition and improving the fluidity. As the compound (F), a monocyclic compound represented by the following general formula (8) or a polycyclic compound represented by the following general formula (9) can be used. It may have a substituent.

(In the general formula (8), one of R18 and R22 is a hydroxyl group, and when one is a hydroxyl group, the other is a hydrogen atom, a hydroxyl group or a substituent other than a hydroxyl group. R19, R20, and R21 are It is a hydrogen atom, a hydroxyl group or a substituent other than a hydroxyl group.)

(In the general formula (9), one of R23 and R29 is a hydroxyl group, and when one is a hydroxyl group, the other is a hydrogen atom, a hydroxyl group or a substituent other than a hydroxyl group. R24, R25, R26, R27) And R28 is a hydrogen atom, a hydroxyl group or a substituent other than a hydroxyl group.)

  Specific examples of the monocyclic compound represented by the general formula (8) include, for example, catechol, pyrogallol, gallic acid, gallic acid ester, and derivatives thereof. Specific examples of the polycyclic compound represented by the general formula (9) include 1,2-dihydroxynaphthalene, 2,3-dihydroxynaphthalene, and derivatives thereof. Among these, a compound in which a hydroxyl group is bonded to each of two adjacent carbon atoms constituting an aromatic ring is preferable because of easy control of fluidity and curability. In consideration of volatilization in the kneading step, it is more preferable that the mother nucleus is a compound having a low volatility and a highly stable weighing naphthalene ring. In this case, specifically, the compound (F) can be a compound having a naphthalene ring such as 1,2-dihydroxynaphthalene, 2,3-dihydroxynaphthalene and derivatives thereof. These compounds (F) may be used individually by 1 type, or may use 2 or more types together.

  The compounding amount of the compound (F) is preferably 0.01% by mass or more and 1% by mass or less, more preferably 0.03% by mass or more and 0.8% by mass in the entire resin composition for encapsulating a semiconductor. % Or less, particularly preferably 0.05% by mass or more and 0.5% by mass or less. When the lower limit value of the compounding amount of the compound (F) is within the above range, it is possible to obtain a sufficient viscosity reduction and fluidity improvement effect of the resin composition for semiconductor encapsulation. Moreover, there exists little possibility of causing the fall of the sclerosis | hardenability of a resin composition for semiconductor sealing, and the fall of physical properties of hardened | cured material as the upper limit of the compounding quantity of a compound (F) is in the said range.

In the resin composition for semiconductor encapsulation of the present invention, an adhesion assistant such as a silane coupling agent can be added in order to improve the adhesion between the epoxy resin and the inorganic filler.
Examples thereof include, but are not limited to, epoxy silane, amino silane, ureido silane, mercapto silane, etc., which react between the epoxy resin and the inorganic filler to improve the interfacial strength between the epoxy resin and the inorganic filler. If it is. Moreover, a silane coupling agent can also raise the effect of the compound (F) of reducing the melt viscosity of a resin composition and improving fluidity | liquidity by using together with the above-mentioned compound (F).
Examples of the epoxy silane include γ-glycidoxypropyltriethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, β- (3,4 epoxycyclohexyl) ethyltrimethoxysilane. Etc.
Examples of the aminosilane include γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, and N-β (aminoethyl) γ-aminopropyl. Methyldimethoxysilane, N-phenylγ-aminopropyltriethoxysilane, N-phenylγ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltriethoxysilane, N-6- (aminohexyl) 3 -Aminopropyltrimethoxysilane, N- (3- (trimethoxysilylpropyl) -1,3-benzenedimethanane, etc. In addition, examples of ureidosilane include γ-ureidopropyltriethoxysilane, hexa And methyldisilazane.
Examples of mercaptosilane include γ-mercaptopropyltrimethoxysilane. These silane coupling agents may be used alone or in combination of two or more.

  The lower limit of the blending ratio of the coupling agent that can be used in the resin composition for encapsulating a semiconductor of the present invention is preferably 0.01% by mass or more, more preferably 0.05% by mass or more in the total resin composition. Especially preferably, it is 0.1 mass% or more. When the lower limit of the blending ratio of the coupling agent is within the above range, the interface strength between the epoxy resin and the inorganic filler is not lowered, and good solder crack resistance in the semiconductor device can be obtained. Moreover, as an upper limit of a coupling agent, 1 mass% or less is preferable in all the resin compositions, More preferably, it is 0.8 mass% or less, Most preferably, it is 0.6 mass% or less. When the upper limit value of the mixing ratio of the coupling agent is within the above range, the interface strength between the epoxy resin and the inorganic filler does not decrease, and good solder crack resistance in the semiconductor device can be obtained. Moreover, if the blending ratio of the coupling agent is within the above range, the water absorption of the cured product of the resin composition does not increase, and good solder crack resistance in the semiconductor device can be obtained.

  In the semiconductor sealing resin composition of the present invention, in addition to the components described above, colorants such as carbon black, bengara and titanium oxide; low-stress additives such as silicone oil and silicone rubber; inorganics such as bismuth oxide hydrate Ion exchangers: Additives such as metal hydroxides such as aluminum hydroxide and magnesium hydroxide, and flame retardants such as zinc borate, zinc molybdate, phosphazene, and antimony trioxide may be appropriately blended.

  The resin composition for encapsulating a semiconductor of the present invention is obtained by using, for example, a mixer, a phenol resin, an epoxy resin and an inorganic filler including the structure represented by the general formula (1), and other components described above. Mix uniformly at room temperature, and then melt-knead using a kneader such as a heating roll, kneader or extruder, if necessary, and then cool and pulverize as necessary. It can be adjusted to fluidity.

Next, the semiconductor device of the present invention will be described.
As a method of manufacturing a semiconductor device using the resin composition for semiconductor encapsulation of the present invention, for example, after a lead frame or a circuit board on which a semiconductor element is mounted is placed in a mold cavity, the resin for semiconductor encapsulation is used. The method of sealing this semiconductor element by shape | molding and hardening | curing a composition with shaping | molding methods, such as a transfer mold, a compression mold, and an injection mold, is mentioned.
Examples of the semiconductor element to be sealed include, but are not limited to, an integrated circuit, a large-scale integrated circuit, a transistor, a thyristor, a diode, and a solid-state imaging element.
As a form of the obtained semiconductor device, for example, dual in-line package (DIP), chip carrier with plastic lead (PLCC), quad flat package (QFP), low profile quad flat package ( LQFP), Small Outline Package (SOP), Small Outline J Lead Package (SOJ), Thin Small Outline Package (TSOP), Thin Quad Flat Package (TQFP), Tape Carrier Package ( TCP), ball grid array (BGA), chip size package (CSP), etc., but are not limited to these.
A semiconductor device in which a semiconductor element is encapsulated by a molding method such as transfer molding of a resin composition for encapsulating a semiconductor is used as it is or at a temperature of about 80 ° C. to 200 ° C. for about 10 minutes to 10 hours. After completely curing the resin composition, it is mounted on an electronic device or the like.
FIG. 1 is a view showing a cross-sectional structure of an example of a semiconductor device using the resin composition for encapsulating a semiconductor according to the present invention. The semiconductor element 1 is fixed on the die pad 3 via the die bond material cured body 2. The electrode pad of the semiconductor element 1 and the lead frame 5 are connected by a gold wire 4. The semiconductor element 1 is sealed with a cured body 6 of a semiconductor sealing resin composition.

  EXAMPLES Hereinafter, although this invention is demonstrated in detail using an Example, this invention is not limited to description of these Examples at all. Unless otherwise specified, the amount of each component described below is part by mass.

The following phenol resins 1 and 2 were used for the phenol resin containing the structure represented by the general formula (1).
Phenol resin 1: phenol (special grade reagent manufactured by Kanto Chemical Co., Inc., phenol, melting point 40.9 ° C., molecular weight 94, purity 99.3%) 100 parts by mass, 4,4′-bischloromethylbiphenyl (Wako Pure Chemical Industries, Ltd.) Co., Ltd., bischloromethylbiphenyl, purity 96%, molecular weight 251) 44.69 parts by mass and pure water 0.5 parts by mass were weighed into a separable flask and heated while replacing with nitrogen to start melting. At the same time, stirring was started. After reacting for 1 hour while maintaining the temperature in the system in the range of 75 ° C. to 85 ° C., salicylaldehyde (salicylaldehyde, Tokyo Chemical Industry Co., Ltd., boiling point 196 ° C., molecular weight 122, purity 98%) 8.56 Mass parts were gradually added to the system over 2 hours, the temperature was further raised to 150 ° C., and the system was reacted for 1 hour while maintaining the system temperature in the range of 145 ° C. to 155 ° C. During the above reaction, hydrochloric acid and water generated in the system by the reaction were discharged out of the system by a nitrogen stream. After completion of the reaction, unreacted components were distilled off under reduced pressure conditions of 150 ° C. and 2 mmHg, and phenol resin 1 having a structure represented by the following formula (10) (hydroxyl equivalent: 161, softening point: 85 ° C., ICI viscosity at 150 ° C. 2.1 dPa · s). A GPC chart is shown in FIG. 2, and an FD-MS chart is shown in FIG.
Phenol resin 2: In the synthesis of phenol resin 1, 14.37 parts by mass of 4,4′-bischloromethyl salicylaldehyde (salicylaldehyde manufactured by Tokyo Chemical Industry Co., Ltd., boiling point 196 ° C., molecular weight 122, purity 98%) A structure represented by the following formula (10) is obtained by performing the same operation as that of the phenol resin 1 with 32.17 parts by mass of biphenyl (bischloromethylbiphenyl manufactured by Wako Pure Chemical Industries, Ltd., purity 96%, molecular weight 251). Phenol resin 2 (hydroxyl equivalent 139, softening point 92 ° C., ICI viscosity 2.7 dPa · s at 150 ° C.) was obtained. A GPC chart is shown in FIG.

As a phenol resin other than the phenol resin including the structure represented by the general formula (1), a phenol resin 3 with m = 0 and a phenol resin 4 with n = 0 were used.
Phenol resin 3: phenol aralkyl resin having a biphenylene skeleton (Maywa Kasei Co., Ltd., MEH-7851SS. Hydroxyl equivalent 203, softening point 67 ° C., ICI viscosity 0.7 dPa · s at 150 ° C.) GPC chart is shown in FIG. .
Phenol resin 4: Triphenylpropane type phenol resin (Maywa Kasei Co., Ltd., MEH-7500. Hydroxyl equivalent 97, softening point 110 ° C., ICI viscosity 5.8 dPa · s at 150 ° C.) GPC chart is shown in FIG.

The GPC measurement of the phenol resins 1 to 4 was performed under the following conditions. 6 ml of the solvent tetrahydrofuran (THF) was added to 20 mg of the phenol resin 1 sample and sufficiently dissolved, and subjected to GPC measurement. The GPC system includes WATERS module W2695, Tosoh Corporation TSK GUARDCOLUMN HHR-L (diameter 6.0 mm, tube length 40 mm, guard column), Tosoh TSK-GEL GMHHR-L (diameter 7. 8 mm, tube length 30 mm, two polystyrene gel columns), and a differential refractive index (RI) detector W2414 manufactured by WATERS, in series, were used. The flow rate of the pump was 0.5 ml / min, the temperature in the column and the differential refractometer was 40 ° C., and measurement was performed by injecting the measurement solution from a 100 μl injector.
The FD-MS measurement of the phenol resin 1 was performed under the following conditions. After adding 1 g of the solvent dimethyl sulfoxide to 10 mg of the phenol resin 1 sample and dissolving it sufficiently, it was applied to the FD emitter and subjected to measurement. The FD-MS system uses an MS-FD15A manufactured by JEOL Ltd. as the ionization unit and an MS-700 model name double-focusing mass spectrometer manufactured by JEOL Ltd. as the detector. Measurement was performed at a detection mass range (m / z) of 50 to 2,000.

Component ratio A between “1 ≦ m ≦ 10” component (A) of the above general formula (1) and component (B) of “m = 0” of the above general formula (1) obtained by measurement by the GPC area method / B was calculated by the following procedure.
(1) GPC measurement of phenol resins 1 to 4 is performed.
(2) The peak position of m = 0 component is confirmed from the chart of the phenol resin 3 (FIG. 5).
(3) The peak position of the n = 0 component is confirmed from the phenol resin 4 chart (FIG. 6).
(4) On the GPC chart of the phenol resins 1 and 2, the peak or shoulder that cannot be attributed to the peak attributed to the phenol resin 3 or 4 is confirmed.
(5) By comparing the molecular weight (M / Z) obtained from the FD / MS analysis result of FIG. 3 with the polystyrene equivalent molecular weight of each peak or shoulder of (4), (n, m) is identified, and mass% is obtained from the area ratio of the chart.
The results of the component ratio A / B of the phenol resins 1 to 3 are shown in Table 1.
In addition, in the GPC measurement of the phenol resins 1 and 2, it was difficult to separate the peaks and analyze the details of components having a molecular weight (m / z) larger than 1108. Therefore, the component ratio is determined from the values of the component (a) “1 ≦ m ≦ 10 and n = 1 to 3” (a) and the component (b) of “m = 0 and n = 1 to 3” that can separate and identify peak areas. a / b was calculated and described as a / b ratio value in Tables 1-3.

The following epoxy resins 1-6 were used for the epoxy resin.
Epoxy resin 1: phenol aralkyl type epoxy resin having a biphenylene skeleton (manufactured by Nippon Kayaku Co., Ltd., NC3000P, epoxy equivalent 275, softening point 60 ° C., ICI viscosity 1.11 dPa · s at 150 ° C.)
Epoxy resin 2: biphenyl type epoxy resin (manufactured by Japan Epoxy Resin Co., Ltd., YX-4000HK, epoxy equivalent 191, melting point 105 ° C., ICI viscosity 0.03 dPa · s at 150 ° C.)
Epoxy resin 3: bisphenol A type epoxy resin (manufactured by Japan Epoxy Resins Co., Ltd., YL6810, epoxy equivalent 172, softening point 45 ° C., softening point 107 ° C., ICI viscosity 0.03 dPa · s at 150 ° C.)
Epoxy resin 4: bisphenol F type epoxy resin (manufactured by Toto Kasei Co., Ltd., YSLV-80XY, epoxy equivalent 190, softening point 80 ° C., ICI viscosity 0.03 dPa · s at 150 ° C.)
Epoxy resin 5: Phenol aralkyl type epoxy resin (Mitsui Chemicals, E-XLC-3L, epoxy equivalent 238, softening point 52 ° C., ICI viscosity 1.20 dPa · s at 150 ° C.).
Epoxy resin 6: Orthocresol novolak type epoxy resin (manufactured by DIC Corporation, N660. Epoxy equivalent 210, softening point 62 ° C., ICI viscosity at 150 ° C. 2.34 dPa · s.

  As the inorganic filler, 80 parts by mass of fused spherical silica FB560 (average particle size 30 μm) manufactured by Denki Kagaku Kogyo Co., Ltd., 10 parts by mass of synthetic spherical silica SO-C2 (average particle size 0.5 μm) manufactured by Admatechs Co., Ltd. A blend of 10 parts by mass of synthetic spherical silica SO-C5 (average particle size 1.5 μm) manufactured by Admatechs Co., Ltd. was used.

The following hardening accelerators 1-4 were used for the hardening accelerator.
Curing accelerator 1: Curing accelerator represented by the following formula (11)

Curing accelerator 2: Curing accelerator represented by the following formula (12)

Curing accelerator 3: Curing accelerator represented by the following formula (13)

Curing accelerator 4: Curing accelerator represented by the following formula (14)

Release agent 1: Oxidized polyethylene wax prepared by the above-described method (dropping point 120 ° C., acid value 20 mg KOH / g, number average molecular weight 2000, density 0.98 g / cm ³ , average particle size 45 μm, particle size 106 μm or more) 0.0% by mass content, high density polyethylene polymer oxide adjusted by jet mill particle size.)
Release agent 2: Oxidized polyethylene wax prepared by the method described above (dropping point 110 ° C., acid value 12 mgKOH / g, number average molecular weight 1200, density 0.97 g / cm ³ , average particle size 50 μm, particle size 106 μm or more 0.0% by mass content, high density polyethylene polymer oxide adjusted by jet mill particle size.)
Release agent 3: Oxidized polyethylene wax prepared by the above-described method (dropping point 120 ° C., acid value 20 mg KOH / g, number average molecular weight 2000, density 0.98 g / cm ³ , average particle size 30 μm, particle size 106 μm or more) 0.0% by mass content, high density polyethylene polymer oxide adjusted by jet mill particle size.)
Mold release agent 4: Carnauba wax (Nikko Fine Co., Ltd., Nikko Carnauba, melting point 83 ° C., acid value 7 mgKOH / g)

As the compound (F), a compound represented by the following formula (15) (manufactured by Tokyo Chemical Industry Co., Ltd., 2,3-naphthalenediol, purity 98%) was used.

As the silane coupling agent, the following silane coupling agents 1 to 3 were used.
Silane coupling agent 1: γ-mercaptopropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., KBM-803)
Silane coupling agent 2: γ-glycidoxypropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., KBM-403)
Silane coupling agent 3: N-phenyl-3-aminopropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., KBM-573)
Carbon black (MA600) manufactured by Mitsubishi Chemical Corporation was used as the colorant.

Example 1
The following components were mixed at room temperature with a mixer, melted and kneaded with a heating roll at 80 ° C. to 100 ° C., then cooled, and then pulverized to obtain a resin composition for semiconductor encapsulation.
Phenolic resin 2 4.38 parts by weight Epoxy resin 1 8.62 parts by weight Inorganic filler 86.00 parts by weight Curing accelerator 1 0.40 parts by weight Release agent 1 0.20 parts by weight Silane coupling agent 1 0.05 Part by mass Silane coupling agent 2 0.05 part by mass Silane coupling agent 3 0.10 part by mass Colorant 0.20 part by mass The obtained resin composition for semiconductor encapsulation was evaluated for the following items. The evaluation results are shown in Table 2.

Spiral flow: Using a low-pressure transfer molding machine (KTS-15, manufactured by Kotaki Seiki Co., Ltd.), a spiral flow measurement mold according to EMMI-1-66 was applied at 175 ° C., injection pressure 6.9 MPa, holding pressure The resin composition for semiconductor encapsulation obtained above was injected under the condition of time 120 seconds, and the flow length was measured. The spiral flow is a fluidity parameter, and the larger the value, the better the fluidity. The unit is cm.
Flame resistance: using a low-pressure transfer molding machine (KTS-30, manufactured by Kotaki Seiki Co., Ltd.) under the conditions of a mold temperature of 175 ° C., an injection time of 15 seconds, a curing time of 120 seconds, and an injection pressure of 9.8 MPa. A stop resin composition was injection molded to produce a 3.2 mm thick flame resistant test piece. About the obtained test piece, the flame resistance test was done according to the specification of UL94 vertical method. The table shows the flame resistance rank.

  Continuous moldability: epoxy resin composition using a low-pressure transfer automatic molding machine (Daiichi Seiko Co., Ltd., GP-ELF) under conditions of a mold temperature of 175 ° C., an injection pressure of 9.8 MPa, and a curing time of 70 seconds. A silicon chip or the like is molded by sealing, and 80-pin QFP (preprating frame: nickel / palladium alloy gold-plated, package outer dimension: 14 mm × 20 mm × 2 mm thickness, pad size: 6.5 mm × 6.5 mm, Molding to obtain a chip size of 6.0 mm × 6.0 mm × 350 μm thickness was continuously performed up to 500 shots. Judgment criteria were ◎ for those that could be continuously molded up to 500 shots without any problems such as unfilling or mold release failure, ◯ for those that could be continuously molded up to 300 shots, and × otherwise.

  Package appearance and mold stain resistance: In the evaluation of the continuous moldability, the package and mold after 300 shots and after 500 shots were visually evaluated for stains. Judgment criteria for package appearance and mold dirtiness are indicated by x for those in which dirt has occurred up to 300 shots, ◯ for those that have not been soiled up to 300 shots, and ◎ that are not dirty up to 500 shots. Further, in the above-mentioned continuous formability, those that could not be formed without any problem up to 500 shots were judged based on the package appearance and mold contamination status when the continuous forming was abandoned.

  Solder resistance: The package formed in the above-described evaluation of continuous formability is post-cured at 175 ° C. for 8 hours, and the resulting package is humidified at 85 ° C. and 60% relative humidity for 168 hours, followed by IR reflow treatment at 260 ° C. Did. For 20 packages, the adhesion state of the interface between the semiconductor element and the cured product of the epoxy resin composition was observed with an ultrasonic flaw detector, and the peeling occurrence rate [(number of peeling occurrence packages) / (total number of packages) × 100] Calculated. Units%. The criteria for determining solder resistance were ◯ when no peeling occurred, Δ when the peeling rate was less than 20%, and x when the peeling rate was 20% or more.

Examples 2-14, Comparative Examples 1-4
According to the formulation of Table 2, a semiconductor sealing resin composition was produced in the same manner as in Example 1, and evaluated in the same manner as in Example 1. The evaluation results are shown in Table 2.

Examples 1-14 are the resin composition for semiconductor sealing containing the phenol resin containing the structure represented by General formula (1), an epoxy resin, and an inorganic filler, and are represented by General formula (1). Modified phenolic resin containing structure, modified mold release agent, modified epoxy resin, modified curing accelerator, or compound (F) Is included.
In any case, excellent results were obtained in the balance of fluidity (spiral flow), flame resistance, solder resistance, and continuous formability. On the other hand, in Comparative Examples 1 to 4 that do not contain the phenol resin and / or the oxidized polyethylene wax having the structure represented by the general formula (1), any of the flame resistance, solder resistance, or continuous formability is inferior. It became.

  According to the present invention, a resin composition for semiconductor encapsulation can be obtained which has good flame resistance and solder resistance, is excellent in fluidity and continuous moldability, and can be produced at low cost. Suitable for use.

DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 Die-bonding material hardening body 3 Die pad 4 Gold wire 5 Lead frame 6 Hardening body of resin composition for semiconductor sealing

Claims (10)

General formula (1)

(In General Formula (1), R1 and R3 are each independently a hydrocarbon group having 1 to 10 carbon atoms, and R2 is independently a hydrocarbon group having 1 to 10 carbon atoms and a hydroxyl group. A is an integer of 0 to 3, b and c are integers of 0 to 4, m is an integer of 0 to 10 and includes a component of m ≦ 1, and n is an integer of 0 to 10. Except for = 0 only and m = 0 only.)
A phenolic resin having a structure represented by:
Epoxy resin,
An inorganic filler;
A curing accelerator;
With oxidized polyethylene wax,
Including
In the phenol resin containing the structure represented by the general formula (1), the total number of moles of the biphenylene compound and the hydroxybenzaldehyde and the biphenylene compound and the hydroxybenzaldehyde is 0.1 with respect to 1 mole of the phenol compound. -0.8 mol, the mass ratio of biphenylene compounds / hydroxybenzaldehyde is obtained by reacting at a ratio of 1-10,
The content ratio (a) mass% of the component of “1 ≦ m ≦ 10 and n = 1 to 3” in the phenol resin including the structure represented by the general formula (1), “m = 0 and n = 1 to 3 "content ratio (b) and a mass ratio a / b to 0.05% by mass is 0.05 or more and 0.55 or less.
A resin composition for encapsulating a semiconductor. The biphenylene compound is represented by the general formula (2),
The hydroxybenzaldehyde compound is represented by the general formula (3).
The resin composition for semiconductor encapsulation according to claim 1.

(In General Formula (2), X represents a hydroxyl group, a halogen atom, or an alkoxy group having 1 to 4 carbon atoms. R3 is independently a hydrocarbon group having 1 to 10 carbon atoms, and c is 0. It is an integer of ~ 4.)

(In general formula (3), R2 is a C1-C10 hydrocarbon group or a hydroxyl group mutually independently, and b is an integer of 0-4.) The biphenylene compound includes 4,4′-bischloromethylbiphenyl, 4,4′-bisbromomethylbiphenyl, 4,4′-bisiodomethylbiphenyl, 4,4′-bishydroxymethylbiphenyl, 4,4′- Bismethoxymethylbiphenyl, 3,3 ′, 5,5′-tetramethyl-4,4′-bischloromethylbiphenyl, 3,3 ′, 5,5′-tetramethyl-4,4′-bisbromomethylbiphenyl 3,3 ′, 5,5′-tetramethyl-4,4′-bisiodomethylbiphenyl, 3,3 ′, 5,5′-tetramethyl-4,4′-bishydroxymethylbiphenyl, 3,3 ', 5,5'-tetramethyl-4,4'-bismethoxymethylbiphenyl, one or more selected from the group consisting of:
The hydroxybenzaldehyde compound includes o-hydroxybenzaldehyde, m-hydroxybenzaldehyde, p-hydroxybenzaldehyde, 2,4-dihydroxybenzaldehyde, 2,5-dihydroxybenzaldehyde, 3,5-di-tert-butyl-4-hydroxybenzaldehyde, 2-hydroxy-5-methylbenzaldehyde, one or more selected from the group consisting of:
The phenol compound is phenol, o-cresol, p-cresol, m-cresol, phenylphenol, ethylphenol, n-propylphenol, iso-propylphenol, t-butylphenol, xylenol, methylpropylphenol, methylbutylphenol, dipropyl. One or more selected from the group consisting of phenol, dibutylphenol, nonylphenol, mesitol, 2,3,5-trimethylphenol, 2,3,6-trimethylphenol,
The resin composition for semiconductor encapsulation according to claim 1 or 2.   The curing accelerator includes at least one selected from a tetra-substituted phosphonium compound, a phosphobetaine compound, an adduct of a phosphine compound and a quinone compound, and an adduct of a phosphonium compound and a silane compound. Item 2. A semiconductor sealing resin composition according to Item 1. The content ratio (A) mass% of the component “1 ≦ m ≦ 10” and the content ratio (B) of the component “m = 0” in the phenol resin including the structure represented by the general formula (1) The resin composition for semiconductor encapsulation according to any one of claims 1 to 4 , wherein a mass ratio A / B with respect to mass% is 0.05 or more and 1.5 or less. The content rate of the component which is n = 1 and 2 in the phenol resin containing the structure represented by the said General formula (1) is 30 mass% or more, Any one of Claims 1-5. A semiconductor sealing resin composition. Phenolic resin containing the structure represented by the general formula (1) is intended to include components of the "n = 0", the semiconductor encapsulating resin composition according to any one of claims 1-6. Phenolic resin having a structure represented by the general formula (1), the content of the component of n = 0 is not more than 30 wt%, a semiconductor sealing according to any one of claims 1-7 Resin composition for stopping. The resin for semiconductor encapsulation according to any one of claims 1 to 8 , wherein the content of the phenol resin including the structure represented by the general formula (1) in the total curing agent is 15% by mass or more. Composition. A semiconductor device obtained by sealing a semiconductor element with the resin composition for sealing a semiconductor according to any one of claims 1 to 9 .