JP2008072091A5 - - Google Patents
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- Publication number
- JP2008072091A5 JP2008072091A5 JP2007183638A JP2007183638A JP2008072091A5 JP 2008072091 A5 JP2008072091 A5 JP 2008072091A5 JP 2007183638 A JP2007183638 A JP 2007183638A JP 2007183638 A JP2007183638 A JP 2007183638A JP 2008072091 A5 JP2008072091 A5 JP 2008072091A5
- Authority
- JP
- Japan
- Prior art keywords
- getter material
- cavity
- cover
- active
- plug
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 17
- 238000007789 sealing Methods 0.000 claims description 11
- 230000004913 activation Effects 0.000 claims description 5
- 239000003989 dielectric material Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 230000003213 activating effect Effects 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052788 barium Inorganic materials 0.000 claims 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 238000002425 crystallisation Methods 0.000 claims 1
- 230000008025 crystallization Effects 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 239000007769 metal material Substances 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 14
- 238000000151 deposition Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0652978 | 2006-07-13 | ||
| FR0652978A FR2903678B1 (fr) | 2006-07-13 | 2006-07-13 | Microcomposant encapsule equipe d'au moins un getter |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008072091A JP2008072091A (ja) | 2008-03-27 |
| JP2008072091A5 true JP2008072091A5 (enExample) | 2014-01-09 |
| JP5452849B2 JP5452849B2 (ja) | 2014-03-26 |
Family
ID=37776793
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007183638A Active JP5452849B2 (ja) | 2006-07-13 | 2007-07-12 | 少なくとも１つのゲッターを備えた密閉超小型部品 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7786561B2 (enExample) |
| EP (1) | EP1878693B1 (enExample) |
| JP (1) | JP5452849B2 (enExample) |
| DE (1) | DE602007002230D1 (enExample) |
| FR (1) | FR2903678B1 (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8159056B1 (en) * | 2008-01-15 | 2012-04-17 | Rf Micro Devices, Inc. | Package for an electronic device |
| US8481365B2 (en) * | 2008-05-28 | 2013-07-09 | Nxp B.V. | MEMS devices |
| FR2933390B1 (fr) * | 2008-07-01 | 2010-09-03 | Commissariat Energie Atomique | Procede d'encapsulation d'un dispositif microelectronique par un materiau getter |
| JP5343969B2 (ja) * | 2008-07-25 | 2013-11-13 | 日本電気株式会社 | 封止パッケージ、プリント回路基板、電子機器及び封止パッケージの製造方法 |
| FR2940588B1 (fr) * | 2008-12-19 | 2011-01-07 | St Microelectronics Grenoble | Ensemble multicomposant blinde a montage en surface |
| DE102009004724A1 (de) * | 2009-01-15 | 2010-07-22 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauteils und optoelektronisches Bauteil |
| FR2947812B1 (fr) | 2009-07-07 | 2012-02-10 | Commissariat Energie Atomique | Cavite etanche et procede de realisation d'une telle cavite etanche |
| EP2470938B1 (en) * | 2009-08-24 | 2017-09-27 | Cavendish Kinetics Inc. | Fabrication of a floating rocker mems device for light modulation |
| FR2950972A1 (fr) * | 2009-10-02 | 2011-04-08 | Commissariat Energie Atomique | Procede et cellule de mesure de la concentration globale en ions d'un fluide corporel |
| US8748206B2 (en) * | 2010-11-23 | 2014-06-10 | Honeywell International Inc. | Systems and methods for a four-layer chip-scale MEMS device |
| US9171964B2 (en) * | 2010-11-23 | 2015-10-27 | Honeywell International Inc. | Systems and methods for a three-layer chip-scale MEMS device |
| FR2976436B1 (fr) * | 2011-06-09 | 2013-07-05 | Commissariat Energie Atomique | Dispositif d'imagerie infrarouge a blindage integre contre des rayonnements infrarouges parasites et procede de fabrication du dispositif. |
| FR2980034B1 (fr) * | 2011-09-08 | 2014-07-04 | Commissariat Energie Atomique | Procede de realisation d'une structure a cavite fermee hermetiquement et sous atmosphere controlee |
| FR2981198B1 (fr) * | 2011-10-11 | 2014-04-04 | Commissariat Energie Atomique | Structure d'encapsulation de dispositif electronique et procede de realisation d'une telle structure |
| FR2981059A1 (fr) * | 2011-10-11 | 2013-04-12 | Commissariat Energie Atomique | Procede d'encapsulation de micro-dispositif par report de capot et depot de getter a travers le capot |
| FR2982073B1 (fr) * | 2011-10-28 | 2014-10-10 | Commissariat Energie Atomique | Structure d'encapsulation hermetique d'un dispositif et d'un composant electronique |
| JP5576542B1 (ja) * | 2013-08-09 | 2014-08-20 | 太陽誘電株式会社 | 回路モジュール及び回路モジュールの製造方法 |
| US9718672B2 (en) * | 2015-05-27 | 2017-08-01 | Globalfoundries Singapore Pte. Ltd. | Electronic devices including substantially hermetically sealed cavities and getter films with Kelvin measurement arrangement for evaluating the getter films and methods for fabricating the same |
| US9567208B1 (en) * | 2015-11-06 | 2017-02-14 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device and method for fabricating the same |
| DE102017210459A1 (de) * | 2017-06-22 | 2018-12-27 | Robert Bosch Gmbh | Mikromechanische Vorrichtung mit einer ersten Kaverne und einer zweiten Kaverne |
| JP7247730B2 (ja) * | 2019-04-23 | 2023-03-29 | 三菱電機株式会社 | 電子モジュール |
| CN111792621B (zh) * | 2020-07-06 | 2024-04-16 | 中国科学院上海微系统与信息技术研究所 | 一种圆片级薄膜封装方法及封装器件 |
| CN116022720A (zh) * | 2021-10-27 | 2023-04-28 | 上海新微技术研发中心有限公司 | 复合吸气剂薄膜结构 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3324395B2 (ja) * | 1995-10-31 | 2002-09-17 | 富士電機株式会社 | 電界型真空管とそれを用いた圧力センサ、加速度センサおよびそれらの製造方法 |
| JPH09148467A (ja) * | 1995-11-24 | 1997-06-06 | Murata Mfg Co Ltd | 動作素子の真空封止の構造およびその製造方法 |
| JP3716501B2 (ja) * | 1996-07-04 | 2005-11-16 | 双葉電子工業株式会社 | 真空気密容器の製造方法 |
| EP1108677B1 (fr) * | 1999-12-15 | 2006-09-27 | Asulab S.A. | Procédé d'encapsulation hermétique in situ de microsystèmes |
| IT1318937B1 (it) | 2000-09-27 | 2003-09-19 | Getters Spa | Metodo per la produzione di dispositivi getter porosi con ridottaperdita di particelle e dispositivi cosi' prodotti |
| US6992375B2 (en) * | 2000-11-30 | 2006-01-31 | Texas Instruments Incorporated | Anchor for device package |
| JP3991689B2 (ja) * | 2002-01-28 | 2007-10-17 | 松下電器産業株式会社 | ガス放電型表示パネル |
| JP3853234B2 (ja) * | 2002-03-05 | 2006-12-06 | 三菱電機株式会社 | 赤外線検出器 |
| US20030183916A1 (en) * | 2002-03-27 | 2003-10-02 | John Heck | Packaging microelectromechanical systems |
| US7429495B2 (en) * | 2002-08-07 | 2008-09-30 | Chang-Feng Wan | System and method of fabricating micro cavities |
| US20050250253A1 (en) * | 2002-10-23 | 2005-11-10 | Cheung Kin P | Processes for hermetically packaging wafer level microscopic structures |
| ITMI20030069A1 (it) | 2003-01-17 | 2004-07-18 | Getters Spa | Dispositivi micromeccanici o microoptoelettronici con deposito di materiale getter e riscaldatore integrato. |
| ITMI20032209A1 (it) * | 2003-11-14 | 2005-05-15 | Getters Spa | Processo per la produzione di dispositivi che richiedono per il loro funzionamento un materiale getter non evaporabile. |
| FR2864341B1 (fr) * | 2003-12-19 | 2006-03-24 | Commissariat Energie Atomique | Microcomposant a cavite hermetique comportant un bouchon et procede de fabrication d'un tel microcomposant |
| JP2006088088A (ja) * | 2004-09-27 | 2006-04-06 | Nissan Motor Co Ltd | ガス吸着素子とこれを用いた赤外線センサ |
| US8043880B2 (en) * | 2005-07-28 | 2011-10-25 | Hewlett-Packard Development, L.P. | Microelectronic device |
| JP5139673B2 (ja) * | 2005-12-22 | 2013-02-06 | セイコーインスツル株式会社 | 三次元配線及びその製造方法、力学量センサ及びその製造方法 |
-
2006
- 2006-07-13 FR FR0652978A patent/FR2903678B1/fr not_active Expired - Fee Related
-
2007
- 2007-07-06 US US11/774,200 patent/US7786561B2/en active Active
- 2007-07-11 DE DE602007002230T patent/DE602007002230D1/de active Active
- 2007-07-11 EP EP07112282A patent/EP1878693B1/fr active Active
- 2007-07-12 JP JP2007183638A patent/JP5452849B2/ja active Active
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