JP2008063186A - 錫ドープ酸化インジウムナノ粒子 - Google Patents
錫ドープ酸化インジウムナノ粒子 Download PDFInfo
- Publication number
- JP2008063186A JP2008063186A JP2006242794A JP2006242794A JP2008063186A JP 2008063186 A JP2008063186 A JP 2008063186A JP 2006242794 A JP2006242794 A JP 2006242794A JP 2006242794 A JP2006242794 A JP 2006242794A JP 2008063186 A JP2008063186 A JP 2008063186A
- Authority
- JP
- Japan
- Prior art keywords
- tin
- ito
- indium oxide
- nanoparticles
- doped indium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002105 nanoparticle Substances 0.000 title claims abstract description 100
- 229910003437 indium oxide Inorganic materials 0.000 title claims abstract description 13
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 title claims abstract description 13
- 238000010304 firing Methods 0.000 claims abstract description 56
- 239000011164 primary particle Substances 0.000 claims abstract description 17
- 230000005540 biological transmission Effects 0.000 claims abstract description 4
- 239000002994 raw material Substances 0.000 claims description 37
- 239000002245 particle Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 239000000428 dust Substances 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 4
- 238000002441 X-ray diffraction Methods 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- 238000004438 BET method Methods 0.000 claims description 2
- 238000003860 storage Methods 0.000 claims description 2
- 239000012789 electroconductive film Substances 0.000 abstract 1
- 238000001812 pycnometry Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 14
- 239000011248 coating agent Substances 0.000 description 13
- 238000000576 coating method Methods 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 12
- 239000010408 film Substances 0.000 description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 238000001816 cooling Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 229910001882 dioxygen Inorganic materials 0.000 description 5
- 230000004927 fusion Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000002791 soaking Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000008188 pellet Substances 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 206010021143 Hypoxia Diseases 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 238000005065 mining Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000005169 Debye-Scherrer Methods 0.000 description 1
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 150000002471 indium Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G15/00—Compounds of gallium, indium or thallium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G19/00—Compounds of tin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/50—Solid solutions
- C01P2002/52—Solid solutions containing elements as dopants
- C01P2002/54—Solid solutions containing elements as dopants one element only
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/10—Solid density
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
- C01P2006/62—L* (lightness axis)
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
- C01P2006/63—Optical properties, e.g. expressed in CIELAB-values a* (red-green axis)
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
- C01P2006/64—Optical properties, e.g. expressed in CIELAB-values b* (yellow-blue axis)
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Conductive Materials (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
【解決手段】錫ドープ酸化インジウムナノ粒子は、透過型電子顕微鏡による観察で測定された一次粒子の平均粒径が5〜100nmであり、ピクノメーター法で測定された真密度が6.8〜7.2g/cm3であることを特徴とする。300℃大気焼成後の圧粉抵抗値が2Ω・cm未満であり、引き続き室温で300時間保存した後の圧粉抵抗値の変化率が10%以下であることが好ましい。
【選択図】図2
Description
図1に示す装置を用いてITOナノ粒子を製造した。10cmの均熱帯12を有する縦型管状炉11内にアルミナ管14を設置した。このとき、アルミナ管14のほぼ中央部に均熱帯12が位置するようにした。アルミナ管14は全長800mm、外径13mm、内径9mmのものであった。均熱帯12は1380℃に加熱されていた。アルミナ管14内には酸素ガスを100ml/minで上から下に向けて吹き込んだ。ホッパー15に備えられている電磁フィーダーにより原料であるITOナノ粒子を0.5g/minの速度でアルミナ管の上部から投入した。原料ナノ粒子としては、三井金属鉱業株式会社製のパストランITO(TYPE−B)を用いた。このITO粒子は還元処理された青色系のものであり、Snの含有量がSnO2換算で8重量%、一次粒子の平均粒径が30nmであった。原料ナノ粒子はアルミナ管内を自由落下し、均熱帯12を通過するときに瞬間焼成された。このようにして得られたITOナノ粒子はうぐいす色を呈していた。
実施例1で用いた原料ITOナノ粒子(三井金属鉱業株式会社製のパストランITO(TYPE−B))を、大気中、静置炉で焼成した。昇温速度は600℃/分、焼成温度は1380℃、焼成時間は1分とした。焼成後の冷却は自然冷却とした。このようにして得られたITOのSEM像を図3に示す。図3は図2と同倍率である。図3に示す結果から明らかなように、得られたITOにおいては原料ナノ粒子の融着が甚だしく、もはやナノ粒子と呼べない状態になっていることが判る。
11 縦型焼成炉
12 加熱手段
13 焼成ゾーン
14 管体
15 ホッパー
Claims (6)
- 透過型電子顕微鏡による観察で測定された一次粒子の平均粒径が5〜100nmであり、ピクノメーター法で測定された真密度が6.8〜7.2g/cm3であることを特徴とする錫ドープ酸化インジウムナノ粒子。
- 300℃大気焼成後の圧粉抵抗値が2Ω・cm未満であり、引き続き室温(25℃,相対湿度50%)で300時間保存した後の圧粉抵抗値の変化率が10%以下である請求項1記載の錫ドープ酸化インジウムナノ粒子。
- X線回折で測定された結晶子径が2〜70nmであり、BET法によって測定された比表面積が15〜35m2/gである請求項1又は2記載の錫ドープ酸化インジウムナノ粒子。
- L*a*b*系表色系色座標においてL値が60〜85、a値が−5〜−30、b値が−5〜30である請求項1ないし3の何れかに記載の錫ドープ酸化インジウムナノ粒子。
- Snの含有量が、SnO2換算で2〜20重量%である請求項1ないし4の何れかに記載の錫ドープ酸化インジウムナノ粒子。
- 完全酸化状態にない錫ドープ酸化インジウムナノ粒子の原料粉末を、酸素雰囲気下、該錫ドープ酸化インジウムの完全酸化が可能な温度以上で且つ該錫ドープ酸化インジウム中の錫が昇華する温度未満の温度範囲で、瞬間焼成して得られたものである請求項1ないし5の何れかに記載の錫ドープ酸化インジウムナノ粒子。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006242794A JP5074727B2 (ja) | 2006-09-07 | 2006-09-07 | 錫ドープ酸化インジウムナノ粒子 |
PCT/JP2007/060865 WO2008029543A1 (ja) | 2006-09-07 | 2007-05-29 | 錫ドープ酸化インジウムナノ粒子 |
KR1020097003513A KR20090103990A (ko) | 2006-09-07 | 2007-05-29 | 주석 도프 산화인듐 나노입자 |
TW096120642A TW200812914A (en) | 2006-09-07 | 2007-06-08 | Tin-doped indium oxide nanoparticle |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006242794A JP5074727B2 (ja) | 2006-09-07 | 2006-09-07 | 錫ドープ酸化インジウムナノ粒子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008063186A true JP2008063186A (ja) | 2008-03-21 |
JP5074727B2 JP5074727B2 (ja) | 2012-11-14 |
Family
ID=39156988
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006242794A Expired - Fee Related JP5074727B2 (ja) | 2006-09-07 | 2006-09-07 | 錫ドープ酸化インジウムナノ粒子 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5074727B2 (ja) |
KR (1) | KR20090103990A (ja) |
TW (1) | TW200812914A (ja) |
WO (1) | WO2008029543A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010007105A (ja) * | 2008-06-25 | 2010-01-14 | Mitsui Mining & Smelting Co Ltd | 高結晶性金属又は金属酸化物粒子の製造方法。 |
JP2011523928A (ja) * | 2008-05-27 | 2011-08-25 | イノブナノ−マテリアイス アバンサドス,ソシエダッド アノニマ | ナノメートルサイズのセラミック材料、その合成法及びその使用 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109279873B (zh) * | 2018-11-21 | 2021-05-25 | 郑州大学 | 氧化铟锡靶材的超低温制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01290527A (ja) * | 1988-05-16 | 1989-11-22 | Tosoh Corp | 透明導電性顔料及びその製造方法 |
JPH11157837A (ja) * | 1997-12-02 | 1999-06-15 | Mitsui Mining & Smelting Co Ltd | Ito微粉末及びその製造方法 |
JP2002068744A (ja) * | 2000-08-30 | 2002-03-08 | Mitsui Mining & Smelting Co Ltd | 酸化錫添加酸化インジウム粉末及びその製造方法 |
-
2006
- 2006-09-07 JP JP2006242794A patent/JP5074727B2/ja not_active Expired - Fee Related
-
2007
- 2007-05-29 WO PCT/JP2007/060865 patent/WO2008029543A1/ja active Application Filing
- 2007-05-29 KR KR1020097003513A patent/KR20090103990A/ko not_active Application Discontinuation
- 2007-06-08 TW TW096120642A patent/TW200812914A/zh unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01290527A (ja) * | 1988-05-16 | 1989-11-22 | Tosoh Corp | 透明導電性顔料及びその製造方法 |
JPH11157837A (ja) * | 1997-12-02 | 1999-06-15 | Mitsui Mining & Smelting Co Ltd | Ito微粉末及びその製造方法 |
JP2002068744A (ja) * | 2000-08-30 | 2002-03-08 | Mitsui Mining & Smelting Co Ltd | 酸化錫添加酸化インジウム粉末及びその製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011523928A (ja) * | 2008-05-27 | 2011-08-25 | イノブナノ−マテリアイス アバンサドス,ソシエダッド アノニマ | ナノメートルサイズのセラミック材料、その合成法及びその使用 |
JP2010007105A (ja) * | 2008-06-25 | 2010-01-14 | Mitsui Mining & Smelting Co Ltd | 高結晶性金属又は金属酸化物粒子の製造方法。 |
Also Published As
Publication number | Publication date |
---|---|
KR20090103990A (ko) | 2009-10-05 |
WO2008029543A1 (ja) | 2008-03-13 |
WO2008029543A8 (ja) | 2009-06-04 |
TW200812914A (en) | 2008-03-16 |
JP5074727B2 (ja) | 2012-11-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5071800A (en) | Oxide powder, sintered body, process for preparation thereof and targe composed thereof | |
TWI419838B (zh) | Ito粉末及其製造方法,ito導電膜用塗料,暨透明導電膜 | |
JP4613362B2 (ja) | 導電ペースト用金属粉および導電ペースト | |
TWI778997B (zh) | 銅粉、該銅粉的製造方法、使用該銅粉之導電性糊、及使用該導電性糊之導電性膜的製造方法 | |
KR102512682B1 (ko) | 산화루테늄 분말, 후막 저항체용 조성물, 후막 저항체용 페이스트 및 후막 저항체 | |
JP4617499B2 (ja) | Ito粉体およびその製造方法、透明導電材用塗料、並びに透明導電膜 | |
TWI803486B (zh) | 銅粒子及其製造方法 | |
JPWO2018190246A1 (ja) | 銅粒子混合物及びその製造方法、銅粒子混合物分散液、銅粒子混合物含有インク、銅粒子混合物の保存方法及び銅粒子混合物の焼結方法 | |
WO2016043051A1 (ja) | ナノサイズの真球状フェライト粒子及びその製造方法 | |
JP3936655B2 (ja) | インジウム酸化物粉末、その製造方法及びこれを使用した高密度インジウム錫酸化物ターゲットの製造方法 | |
JPH07258836A (ja) | アルミニウムドープ酸化亜鉛焼結体およびその製造方法並びにその用途 | |
JP5074727B2 (ja) | 錫ドープ酸化インジウムナノ粒子 | |
KR100670621B1 (ko) | 주석-함유 산화인듐, 이의 제조 방법, 그 산화인듐을사용하는 코팅액, 및 그 산화인듐으로부터 형성된 전기전도성 코팅물 | |
JP2008230915A (ja) | 導電性酸化亜鉛粒子及びその製造方法 | |
JP4879762B2 (ja) | 銀粉の製造方法及び銀粉 | |
KR101236246B1 (ko) | 구리 분말 | |
JP4111425B2 (ja) | 導電ペースト用の銅粉及びその銅粉を用いた導電ペースト並びにその導電ペーストを用いた導体を含んだチップ部品 | |
JP2007197836A (ja) | ニッケル粉 | |
JP5285412B2 (ja) | 錫ドープ酸化インジウム粒子及びその製造方法 | |
JP3945740B2 (ja) | ニッケル粉 | |
JP5123755B2 (ja) | 高結晶性金属又は金属酸化物粒子の製造方法。 | |
JP4150638B2 (ja) | 無機酸化物コート金属粉及びその無機酸化物コート金属粉の製造方法 | |
JPH02297813A (ja) | 酸化物焼結体及びその製造方法並びにそれを用いたターゲット | |
JPH02297812A (ja) | 酸化物焼結体及びその製造方法並びにそれを用いたターゲツト | |
JP6952051B2 (ja) | 赤外線遮蔽材、及び酸化スズ粒子の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090901 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120522 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120720 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120814 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120824 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150831 Year of fee payment: 3 |
|
LAPS | Cancellation because of no payment of annual fees |