JP2008034569A - Semiconductor integrated circuit checking probe card and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve position precision of a probe electrode of a probe card used for collective wafer level burn-in measurement. <P>SOLUTION: In the semiconductor integrated circuit checking probe card, a plurality of probe electrodes such as bump electrodes 5 are formed on one main face and a thin film sheet 9 fixed to a support such as a ceramic ring 7 at an outer periphery is arranged. Tension distortion occurs in the thin film sheet 9 fixed to the ceramic ring 7 by forming a local tension changing portion 12. The sheet is arranged in a prescribed position where a plurality of bump electrodes 5 are electrically connected to electrodes of the semiconductor integrated circuit elements of a semiconductor wafer. Tension distortion of the thin film sheet 9 is positively and continuously changed. Thus, the bump electrodes 5 can be rearranged in the desired positions. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a probe card for semiconductor integrated circuit inspection for batch inspection and screening of a plurality of semiconductor integrated circuit elements formed on a semiconductor wafer in a wafer state, and a manufacturing method thereof, and more particularly to an electrode of a semiconductor integrated circuit element. The present invention relates to a technique for correcting the position of a probe electrode to be electrically connected.

  In general, a plurality of semiconductor integrated circuit elements are formed on a semiconductor wafer through a diffusion process and divided into individual semiconductor devices. The divided semiconductor device is electrically connected to the lead frame by a bonding wire, and is molded with a resin or ceramic to become a product.

  As semiconductor manufacturing circuit elements become more miniaturized and multifunctional, burn-in (screening) tests are indispensable to ensure product quality and prevent problems after mounting. ing. The burn-in test applies a temperature and an electric load to a semiconductor integrated circuit element, and has conventionally been performed in a product state. However, the number of semiconductor integrated circuit elements sold as single devices (chips) has increased, and quality assurance in the wafer state has become important, so a batch burn-in test in the wafer state has also been carried out. According to batch burn-in, in addition to finding defects in the process before assembling and shortening the inspection time in the post-process, the burn-in cost can also be reduced, so that the productivity can be improved and the inspection cost can be reduced.

  In order to perform batch burn-in, it is necessary to apply power supply power to the electrodes (AL pads) necessary for burn-in inspection of each of a plurality of semiconductor integrated circuit elements on a semiconductor wafer. The 70,000 or more electrodes are collectively contacted. For this purpose, a probe card that can contact a large number of electrodes on the wafer at once, that is, a medium in which a large number of probe electrodes are arranged so as to face a large number of electrodes distributed over the entire surface of the wafer has been proposed and used (for example, (See Patent Document 1).

  Since the probe card performs simultaneous contact with a large number of electrodes distributed on the entire surface of the wafer as described above, the probe electrode is required to have very high positional accuracy. However, as the diameter of the wafer increases, it becomes more difficult to pursue the positional accuracy of the probe electrode. As a method for improving the positional accuracy, a desired positional accuracy is obtained by temporarily applying a tension to the contact sheet on which the probe electrode is formed on the outside or the inside, and fixing the state with another rigid ring or a correction jig. Has been proposed (see, for example, Patent Document 2).

  FIG. 13 shows a typical structure of the probe card. A semiconductor wafer 31 has a plurality of pad electrodes (hereinafter simply referred to as electrodes) 32. The probe card 1 is composed of a contact sheet 2, a localized anisotropic conductive rubber 3, and a glass wiring board 4. The contact sheet 2 has a bump electrode 5 as a probe electrode for contacting simultaneously with a plurality of electrodes 32 of the semiconductor wafer 31 on one surface, and an isolated pattern electrode so as to make a pair with each bump electrode 5 on the back surface. 6 is formed, and the isolated pattern electrode 6 is connected to the electrode of the glass wiring board 4 through the localized anisotropic conductive rubber 3.

  The manufacturing method of the contact sheet 2 is shown in FIG. First, as shown in FIGS. 14A and 14B, a two-layer base material 10 composed of a Cu layer 8 and a polyimide layer 9 is bonded to a ceramic ring 7 having a low coefficient of thermal expansion. At this time, the two-layer base material 10 is heated to about 200 ° C. to be thermally expanded and bonded to the ceramic ring 7.

  Next, as shown in FIG. 14C, bump forming holes 11 are formed in the two-layer base material 10 by laser, and bump electrodes 5 are formed by plating growth in the holes 11 as shown in FIG. 14D. Then, as shown in FIG. 14E, the Cu layer 8 is removed leaving a predetermined size to form an isolated pattern electrode 6 (refer to Patent Document 1 for details).

FIG. 14 (f) shows the completed contact sheet 2. Bump electrodes 5 and isolated pattern electrodes 6 (see FIG. 14E) are formed on the front and back of a polyimide layer 9 (hereinafter referred to as a thin film sheet 9). The outer periphery of the contact sheet 2 (thin film sheet 9 with bumps) is fixed to a ceramic ring 7. The two-layer base material 10 was first thermally expanded when it was bonded to the ceramic ring 7 because the thin film sheet 9 remaining when the Cu layer 8 (Cu thermal expansion coefficient was 16 ppm / ° C.) was removed had a constant tension. This is because no slack is produced even when the temperature is raised to the burn-in temperature.
JP-A-7-231019 JP-A-2005-340485

  However, in the structure of the conventional probe card 1, when the two-layer base material 10 is bonded to the ceramic ring 7 as described above, the ceramic ring 7 receives a large force inward due to the tension of Cu, and the ceramic ring 7 is caused by this force. Shrinks isotropically and at the same time distorts into an ellipse. The amount of distortion generated at this time is a large amount of 10 times or more compared to the amount of shrinkage. Since the direction of strain is determined by slight variations in manufacturing the ceramic ring 7 and the two-layer base material 10, it is extremely difficult to predict the direction. For this reason, the bump electrode 5 formed on the two-layer base material 10 is practically impossible to obtain an accuracy that is more difficult to predict than variations in elliptical distortion, no matter how high the accuracy of the hole 11 is.

  The holes 11 themselves are also slightly deviated locally due to the influence of heat received by the two-layer base material 10 from the laser beam, that is, due to the influence of the processing sequence, processing time, and processing environment. This deviation is also very difficult to control, and becomes an obstacle to the positional accuracy of the bump electrode 5 formed for each hole 11.

  In the method of Patent Document 2, as described above, the contact sheet 2 is temporarily corrected to apply a tension to the outside or the inside, but a sufficient area necessary for the correction needs to be secured in advance. There are some problems.

  In view of the above problems, an object of the present invention is to improve the positional accuracy of probe electrodes (bump electrodes) of a probe card.

  In order to achieve the above object, the present invention improves the positional accuracy by relocating the probe electrode to a desired position by actively and continuously changing the tensile strain of the thin film sheet on which the probe electrode is formed. It is something to be made.

  In other words, the probe card for testing a semiconductor integrated circuit according to the present invention has a plurality of probe electrodes for forming a plurality of semiconductor integrated circuit elements formed on a semiconductor wafer in an electrically conductive manner on one main surface, and a support on the outer periphery. A probe card for inspecting a semiconductor integrated circuit having a thin film sheet fixed to the thin film sheet, wherein the thin film sheet fixed to the support has a tensile strain generated by forming a local tension changing portion, The probe electrode is disposed at a predetermined position electrically connected to the electrode of each semiconductor integrated circuit element of the semiconductor wafer.

  In the probe card for testing a semiconductor integrated circuit according to the present invention, a plurality of probe electrodes for electrically conducting a plurality of semiconductor integrated circuit elements formed on a semiconductor wafer are formed on one main surface, and in a state having tension. A probe card for inspecting a semiconductor integrated circuit having a thin film sheet fixed to a support at the outer periphery, wherein the support to which the thin film sheet is fixed is ring-shaped, and is at least one direction of the surface direction of the support A plurality of probe electrodes of the thin film sheet are arranged at predetermined positions electrically connected to the electrodes of the semiconductor integrated circuit elements of the semiconductor wafer. It is characterized by being.

  When manufacturing the semiconductor integrated circuit test probe card having the above first configuration, a local strain that generates a tensile strain in a thin film sheet with a probe electrode fixed to a frame-shaped support that is the same as or different from the support. By forming at least one typical tension changing portion, the positions of the plurality of probe electrodes of the thin film sheet can be corrected to predetermined positions that are electrically connected to the electrodes of the semiconductor integrated circuit elements of the semiconductor wafer. it can.

  Further, when manufacturing the semiconductor integrated circuit test probe card of the second configuration, the frame-like support body to which the thin film sheet with the probe electrode is fixed is applied with a strain that generates a tensile strain on the thin film sheet. The position of the plurality of probe electrodes of the thin film sheet can be corrected to a predetermined position that is electrically connected to the electrode of each semiconductor integrated circuit element of the semiconductor wafer.

  A thin film sheet with a probe electrode comprises a step of fixing a multilayer base material having a conductor layer and an insulating elastic material layer on the front and back in a state where tension is applied to a frame-like support at the outer periphery thereof, and the multilayer base material Forming a hole reaching the conductor layer from the insulating elastic material layer side at a predetermined plurality of locations, and forming a plurality of probe electrodes by arranging a conductor material so as to conduct to the conductor layer at each hole location And at least a step of forming a plurality of second electrodes electrically connected to each of the plurality of probe electrodes by etching the conductor layer so as to leave the conductor layer at the positions of the holes. Can be manufactured.

  In fixing the thin film sheet to the frame-like support with tension, the temperature of the thin film sheet is preferably raised. The thermal expansion of the thin film sheet is almost dominated by the conductor layer, and the frame-like support is made of ceramics and the like, so its coefficient of thermal expansion is usually smaller than each material of the thin film sheet. If the entire thin film sheet is stretched using the elongation of the conductor layer and fixed to a frame-like support, and the temperature is restored, the thin film sheet will be in tension.

  When the second electrode is formed on the thin film sheet thus fixed by etching and removing the conductor layer as described above, the frame-like support is slightly attached by attaching the thin film sheet with tension. The force that was to be distorted is released along with the removal of the conductor layer, and the release of the tension causes the frame-shaped support to return to its original state, causing the probe electrode to be rearranged as described above. is there. At that time, the return of the frame-shaped support usually does not occur isotropically, and if it is a ring-shaped support, it becomes an ellipse, and the tension of the thin film sheet attached thereto changes, and accordingly As described above, the probe electrode to be rearranged deviates from the expected position.

  If the probe electrode is deviated from the expected position for such a cause or other cause, a tension changing portion is formed as described above in the direction of correcting the probe electrode, or a frame-like By adopting an assembly method in which the support is positively distorted and fixed to the wiring substrate while pulling the thin film sheet, the probe electrode can be rearranged at the expected position.

  It is preferable that the tension changing portion of the thin film sheet is generated on the outer peripheral side of the plurality of probe electrode formation regions and at a position up to the fixing portion to the support. This is because the rearrangement of the bumps can continuously and gradually occur.

As the tension changing portion, a heat shrinkage portion or an elastic modulus lowering portion can be formed.
In order to form the heat-shrinkable portion, a material having a heat-shrink characteristic, for example, a polymer material such as polyimide resin is selected in advance. Then, the temperature is locally raised to the glass transition temperature to cause larger heat shrinkage than other portions. This makes it possible to increase the tension, pull the other part, and reposition the probe electrode.

  When the thin film sheet is heated to form the heat shrinkage part, it is desirable to control the heating amount (heat amount / time) and the heating position (location / range) while measuring the position of the probe electrode. While confirming the effect of heat shrinkage, heating is performed until the desired state can be corrected. Hot air, an electric heater, a laser, or a halogen lamp can be used as a heat source. When using a halogen lamp, the light is preferably condensed by an optical fiber. This is because only the necessary part can be locally heated.

  In order to form the elastic modulus lowering portion, a plurality of holes may be formed in the thin film sheet by physical means. Physical means include lasers, needles and punches. When using a laser, a heat-resistant material is provided on the base of the thin film sheet. This is to prevent damage to other members on the transmission side. In order to form the elastic modulus lowering portion, the thin film sheet may be thinned by mechanical polishing or chemical etching.

  The distortion of the frame-shaped support is generated in the surface direction of the thin film sheet, and the limit is the amount that the support itself is not damaged. For example, when a ceramic ring having a diameter of 300 mm is used as the support, it is appropriate that the amount of strain is less than 100 μm. The distortion of such a frame-like support can be given by joining desired portions with tape. This tape may be removed after the ring-shaped rigid body is fixed to the wiring board.

  A position correction apparatus for correcting positions of a plurality of probe electrodes of the thin film sheet to predetermined positions electrically connected to electrodes of each semiconductor integrated circuit element of the semiconductor wafer, the semiconductor wafer and the support body A stage for holding the thin film sheet fixed to the same or different frame-shaped support, a recognition means for recognizing an arbitrary position of the semiconductor wafer and the thin film sheet held on the stage, and the thin film sheet A heat source unit and a heat quantity controller for applying heat; a moving means for moving at least one of the stage and the heat source unit to arrange the thin film sheet at a heating position by the heat source unit; and an X, Y, Z position controller; The semiconductor integrated circuit corresponding to the position of the probe electrode of the thin film sheet recognized by the recognition means. Based on the amount of deviation from the position of the electrode of the element, the heating position and heating are set in the X, Y, Z position controller and the heat quantity controller so as to form a local heating contraction part that generates a tensile strain in the thin film sheet. A position correction apparatus including an integrated control apparatus that commands time also constitutes the present invention.

  Since the probe card of the present invention corrects the position of the probe electrode by positively and continuously changing the tensile strain of the thin film sheet on which the probe electrode is formed, the position accuracy can be improved and the semiconductor wafer can be improved. It is possible to eliminate a connection failure with respect to and a waste of re-inspection caused thereby, lead time can be shortened and cost can be reduced, and stable wafer burn-in measurement can be realized.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. Since the probe card according to the present invention has basically the same configuration and manufacturing method as the conventional probe card described with reference to FIGS. 13 and 14, FIG. 13 and FIG. 14 are cited. explain.

  In FIG. 13, reference numeral 31 denotes a semiconductor wafer having a plurality of pad electrodes (hereinafter simply referred to as electrodes) 32. The probe card 1 is composed of a contact sheet 2, a localized anisotropic conductive rubber 3, and a glass wiring board 4. The glass wiring board 4 has electrodes for supplying power for inspection and signals on one main surface, and has rigidity.

  In the contact sheet 2, a plurality of bump electrodes 5 as probe electrodes for making contact at the same time with a plurality of electrodes 32 of the semiconductor wafer 31 are formed on one surface, and a pair with each bump electrode 5 is formed on the back side thereof. A ring such as a ceramics ring 7 (which preferably has a thermal expansion coefficient of about 3-4 ppm / ° C. or less such as SiN or SiC) integrated with the glass wiring substrate 4 is formed. Fixed to the support. Each of the isolated pattern electrodes 6 is directly electrically connected to the bump electrode 5 and is connected to the electrode of the glass wiring substrate 1 through the localized anisotropic conductive rubber 3. However, it may be directly connected to the electrode of the glass wiring board 1 without using the localized anisotropic conductive rubber 3.

  When the contact sheet 2 is manufactured, as shown in FIGS. 14 (a) and 14 (b), a two-layer base material having a metal conductor layer such as a Cu layer 8 and an insulating elastic material layer such as a polyimide layer 9 on both sides. 10 (may be a substrate of three or more layers with an adhesive layer or the like interposed therebetween) is bonded to a ceramic ring 7 having an inner periphery larger than that of the semiconductor wafer 31. At this time, the two-layer base material 10 is heated to about 200 ° C. and thermally expanded.

  Next, as shown in FIG. 14 (c), holes 11 reaching the Cu layer 8 from the polyimide layer 9 side are formed by laser at a predetermined plurality of locations of the two-layer base material 10, and as shown in FIG. 14 (d). Bump electrodes 5 are formed by plating growth at the positions of the holes 11 and etched away leaving the Cu layer 8 in the region to be the isolated pattern electrode 6 as shown in FIG.

  FIG. 14 (f) shows the completed contact sheet 2. Bump electrodes 5 and isolated pattern electrodes 6 (see FIG. 14E) are formed on the front and back of a polyimide layer 9 (hereinafter referred to as a thin film sheet 9). The outer periphery of the contact sheet 2 (thin film sheet 9 with bumps) is fixed to a ceramic ring 7. The thin film sheet 9 with bumps is fixed in a tensioned state by thermally expanding when the two-layer base material 10 is first bonded to the ceramic ring 7.

  The difference between the probe card 1 of the present invention and the conventional one will be described with reference mainly to the contact sheet 2 shown in FIG. The contact sheet 2 is a part of the thin film sheet 9, here a region 9B on the outer peripheral side of the bump forming region 9A (hereinafter referred to as the outer peripheral region 9B), and a portion 12 (hereinafter referred to as a tension different from the other portions). The tension changing portion 12 is formed and is fixed to the ceramic ring 7 in a state where tensile strain is generated, whereby the positions of the plurality of bump electrodes 5 are the electrodes of each semiconductor integrated circuit element of the semiconductor wafer 31. 32 is corrected to a predetermined position where it is electrically connected to 32.

  In this specification, the tension refers to a stress that works to pull the cross sections perpendicular to each other in the object, and the tension strain appears when an external force (based on non-uniform tension) is applied to the object. A change in shape or volume. In the contact sheet 2 described above, the thin film sheet 9 (the state in which the tension is kept uniform) attached to the ceramic ring 7 is processed by some means to partially break the tension balance (tension changing unit 12). The bump electrode 5 is moved to a desired position by utilizing the fact that the thin film sheet 9 tries to be in a uniform tension state again at that time. .

  This will be described with reference to FIG. FIG. 2A shows the tension at each position of the thin film sheet 9 when the tension of the tension changing unit 12 is larger than that of the other parts in the direction of the straight line AA ′. FIG. 2B shows the direction of movement of the bump electrode 5 (that is, the direction of displacement of each position of the thin film sheet 9) and the amount caused by the change in tension strain. Thus, by locally increasing the tension of the thin film sheet 9, the bump electrodes 5 on the thin film sheet 9 are rearranged in a direction in which the tension of the entire thin film sheet 9 becomes uniform. In this case, since the tension is increased by the tension changing section 12 in the outer peripheral region 9B, the rearrangement in which the bump electrode 5 on the AA ′ line (and its vicinity) moves to the outer peripheral side of the thin film sheet 9 is performed. Made.

  On the contrary, even if the tension of the thin film sheet 9 is locally reduced, the rearrangement of the bump electrodes 5 occurs. When the tension of the tension changing unit 12 described above is reduced, rearrangement is performed in which the bump electrode 5 on the AA ′ line (and its vicinity) moves to the center side of the thin film sheet 9.

  Note that changing the tension in the outer peripheral region 9B is characterized by causing relatively uniform rearrangement. Therefore, it is effective in correcting a gentle position shift as a whole, not a steep position shift. Complex rearrangement can be realized by locally changing the tension in the bump formation region 9A. In particular, the effect increases by narrowing and steepening the region where the tension is changed.

  In causing a local change in tension, the thin film sheet 9 is formed using a base material mainly composed of a polymer material such as polyimide as described above, and the polymer material generally has a glass transition temperature around the glass transition temperature. Since the heat shrinks when the temperature is raised to a temperature, a tensile strain can be generated in a desired portion by heat using this characteristic.

  FIG. 3 is a heat shrinkage characteristic diagram. In a sheet made of a polymer material, while the amount of heat applied (determined by the heating temperature and time) is within a certain range, the shrinkage rate increases with the increase, and when the amount exceeds that range, the shrinkage amount is saturated. When the amount of heat per unit time is constant, the same characteristic diagram is obtained even with time on the horizontal axis. By using such heat shrinkage characteristics, the amount of correction can be determined by selecting the amount of heat within a range where the shrinkage rate depends on the amount of heat (preferably proportional), and by grasping in advance the shrinkage rate corresponding to the amount of heat. (Movement amount) can be predicted and selected. In the case of polyimide, heat shrinkage of about 0.45% occurs at 350 ° C. for about 10 minutes.

  FIG. 1 shows a state in which the hot air is contracted by a stainless steel nozzle and concentrated in a necessary range to cause thermal contraction in the tension changing unit 12. Although the hot air is squeezed by the nozzle, it is blown over a relatively wide range, and the tension strain continuously changes as shown in the tension changing portion 12 in light and shade. If the heating control that adjusts the temperature, location, and time of heating is performed while monitoring (measuring) the position of the bump near the location to be heat-shrinked through a camera, etc., the target correction can be performed more accurately. Can do. Local changes in tension can be caused by chemicals and mechanical processing as well as heat.

Hereinafter, a method for generating local tension strain will be described more specifically.
FIG. 4 is a conceptual diagram showing a method of correcting the position using a positioning bump electrode 5 generally provided on the contact sheet 2 for positioning with respect to the semiconductor wafer. Bump electrodes 5 for positioning are formed at eight locations on the thin film sheet 9, and the thin film sheet 9 is attached to the ceramic ring 7 with a certain tension or more as a whole. When the positioning bump electrode 5 is located at a broken line position deviated from a predetermined position as shown in the drawing, the thin film sheet is heated by the warm air from the heat source 13 in the outer peripheral region 9B and in the vicinity of the bump electrode 5. 9 is caused to undergo thermal contraction (tension changing portion 12), and the bump electrode 5 can be moved to a predetermined position in a direction approaching the heating location.

  This will be described in detail. In FIG. 5, when it is desired to correct the position of the bump electrode 5 on the thin film sheet 9 from the position 5a to the position 5b by the movement amount Y ′, the heating area 12a on the straight line connecting the original position 5a and the destination position 5b is displayed. Heat by the heat source 13a. At that time, the position of the heat source 13a can be accurately corrected to the position 5b at the coordinate of the movement amount Y ′ by controlling the heating while recognizing the movement amount of the bump electrode 5. When it is desired to correct the position of the bump electrode 5 from the position 5a to the position 5c by the movement amounts X ″ and Y ″, the heating area 12b on the straight line connecting the original position 5a and the destination position 5c is heated by the heat source 13b. . Also at this time, the position of the heat source 13b can be accurately corrected to the position 5c at the coordinates of the movement amounts X ″ and Y ″ by controlling the heating while recognizing the movement amount of the bump electrode 5.

  The example using warm air as a heat source has been described above, but it is also effective to use a heater. When using a soldering iron-like heater with a flat tip of about 5 mmφ, the temperature distribution in the surface direction is steeper compared to warm air, giving a steep tension strain, in other words, a stepwise strain. It becomes possible. Laser light may be used as a heat source, which makes it possible to cause local thermal contraction in a further minute area. In order to efficiently convert laser light into heat, a better result can be obtained by applying a material having a high laser absorption rate in advance. It is also effective to use a light source such as a halogen lamp as a heat source. In order to efficiently cause heat shrinkage at a specific location, it is preferable to narrow down with an optical fiber or the like. A method of applying a material having a high light absorption rate only to a portion where heat shrinkage is desired and applying a strong light to the entire surface is also simple. Whichever heat source is used, it is possible to arrange a material having excellent heat resistance and a high heat insulating effect on the back side of the thin film sheet 9 in order to efficiently cause heat shrinkage and to protect the back side. It is preferable.

FIG. 6 shows the configuration of the position correction apparatus.
In the contact sheet 2, a plurality of bump electrodes 5 and isolated pattern electrodes (not shown) that are paired with the bump electrodes 5 are formed on a transparent thin film sheet 9, and are fixed to the ceramic ring 7 at the outer peripheral portion of the thin film sheet 9. Has been. Reference numeral 14 denotes a ring-shaped seizure prevention plate disposed between the contact sheet 2 and the semiconductor wafer 31. Reference numeral 15 denotes an aluminum wafer tray which integrally holds the semiconductor wafer 31, the anti-seize plate 14, and the contact sheet 2.

  16 is an XY table for moving the wafer tray 15 in the X and Y directions, 17 is a recognition camera for recognizing arbitrary positions of the semiconductor wafer 31 and the contact sheet 2 held on the wafer tray 15 from above, and 18 is A heat source unit for applying heat to the thin film sheet 9 and having a vertical mechanism (Z direction), 19 is a heat quantity controller for controlling the amount of heat applied by the heat source unit 18, and 20 is for heating the thin film sheet 9 by the heat source unit 18. An XY table 16 and an X, Y, and Z position controller 21 for moving the heat source unit 18 to be arranged at positions are an integrated PC that performs image processing and integrated control for a recognition camera.

  When the wafer tray 15 holding the semiconductor wafer 31, the anti-seize plate 14 and the contact sheet 2 together is installed on the XY table 16, the X, Y, Z position controller 20, X− The Y table 16 automatically moves to the heating area by the heat source unit 18.

  Then, for example, the positioning bump electrode 5 on the contact sheet 2 and the corresponding electrode of the semiconductor wafer 31 on the contact sheet 2 are monitored at a time from above by the recognition camera 17, and the position of the electrode of the semiconductor wafer 31 is subjected to image processing. Is used as a reference, and the displacement amount of the positioning bump electrode 5 is obtained.

  Then, feedback control of the heating position (location, range) and heating amount (heating temperature, heating time) is performed on the X, Y, Z position controller 20 and the heat quantity controller 19 so as to eliminate the deviation, and the thin film sheet 9 is formed with the above-mentioned local heat-shrinkable portion, and a tensile strain is generated, so that the positioning bump electrode 5 and the bump electrode 5 in the vicinity thereof are rearranged at appropriate positions. The seizure of the semiconductor wafer 31 is prevented by the seizure prevention plate 14.

  At the start of monitoring by the recognition camera 17, the position of the positioning bump electrode 5 on the entire surface of the thin film sheet 9 is first observed. If there are a plurality of bump electrodes 5 that need to be corrected and are close to each other, a tensile strain is caused at a position that seems to be optimum in consideration of the relative positions of the bump electrodes 5. For example, when a bump electrode having the largest correction amount (hereinafter referred to as a first correction bump electrode) is first corrected, a movement direction in which another bump electrode (hereinafter referred to as a second correction bump electrode) moves is predicted. In addition, when correcting the first correction bump electrode while considering the movement amount of the second correction bump electrode and subsequently correcting the second correction bump electrode, the direction and the movement amount of the first correction bump electrode itself are moved. After that, the second correction bump electrode is corrected so that the bumps at the respective positions are at optimum positions.

  Of course, as described above, both the contact sheet 2 and the semiconductor wafer 31 are not observed at once with the single recognition camera 17, but are separately observed with a single or a plurality of recognition cameras and superimposed on the image. Also good.

  Further, as illustrated, the contact sheet 2 fixed to the ceramic ring 7 is preferably processed alone, that is, in a state where it is not integrated with the wiring substrate 4. When it is necessary to process the wiring board 4 above, a light shielding / heat insulating sheet is disposed so as not to damage the wiring board 4 with a laser beam or the like.

  Next, as described above, the tension of a part of the thin film sheet 9 is not increased, but a part of the tension is relaxed to cause a strain in the thin film sheet 9 and the bump electrode 5 is rearranged. The method to perform is demonstrated.

  In the contact sheet 2 shown in FIG. 7, it is assumed that the bump electrode 5 on the thin film sheet 9 whose outer peripheral portion is fixed to the ceramic ring 7 is formed on the right side from the original design position. The thin film sheet 9 is initially attached with tension throughout.

  In such a case, as shown in the drawing, the tension is relaxed by making a hole 23 in the thin film sheet 9. That is, with the needle 24, the hole 23 is opened on the opposite side of the direction of movement of the bump electrode 5 to be corrected. When the hole 23 is opened, the tension of the portion is reduced and stretched (apparent elastic modulus is lowered), so that the bump electrode 5 moves in the direction opposite to the hole 23.

  The number and size of the holes 23 may be arbitrarily adjusted according to the required correction amount, and the bump electrodes 5 can be moved gradually if the holes 23 are formed in small portions. This is a technique that is simple and easy to process, can control the amount of tensile strain, and can easily correct in the center direction by processing the outer peripheral region of the thin film sheet 9.

  The shape of the hole 23 is not necessarily circular, but it is formed in the thin film sheet 9 having tension. Therefore, the smooth shape is less likely to break from the corner, and the thin film sheet has higher tension. Application to is possible. A perfect circle or a shape close to it is preferable.

  The needle 24 preferably has a needle tip of about 0.3 mm to 3 mm, and a dispenser needle, an injection needle, or the like is used with its tip sharpened conically. Thereby, a hole 23 having a perfect circle and a shape close thereto is formed. For simplicity, the tip is sharpened with a scissors or the like while the needle 24 is fixed and rotated on the rotating part of a rotary instrument such as a drill. It is better to smooth the surface of the needle tip by chemical etching.

  Instead of the needle 24, excimer or carbon dioxide laser light (not shown) may be used. According to the laser light, since the thin film sheet 9 is melted to form the hole 23, the shape of the hole 23 becomes smooth, and the tear of the thin film sheet 9 starting from the hole 23 is less than when the needle 24 is used. Hard to occur.

  As another method for relaxing the tension of the thin film sheet 9, there is a method in which a part of the thin film sheet 9 is mechanically polished and thinned. In the contact sheet 2 shown in FIG. 8, the bump electrode 5 on the thin film sheet 9 whose outer peripheral portion is fixed to the ceramic ring 7 is formed on the right side from the original design position, as described with reference to FIG. Has been.

  In this case as well, the side opposite to the direction of movement is processed with respect to the bump electrode 5 to be corrected. The portion 28 where tension is to be relaxed is thinned by polishing with a mechanical polishing file 27 having a tip 26 attached to the tip of the rotary shaft 25. Since the tension of the thinned portion 28 decreases and extends, the bump electrode 5 moves in the direction opposite to that portion 28.

  As still another method for relaxing the tension of the thin film sheet 9, there is a method in which a part of the thin film sheet 9 is chemically etched and thinned. In the contact sheet 2 shown in FIG. 9, the bump electrode 5 on the thin film sheet 9 whose outer peripheral portion is fixed to the ceramic ring 7 is formed on the right side from the original design position, as described with reference to FIG. Has been.

  In this case as well, the side opposite to the direction of movement is processed with respect to the bump electrode 5 to be corrected. The portion 28 where the tension is to be relaxed is thinned by supplying the etching solution 29 by a method such as dropping or coating, and is washed away with a large amount of water at an appropriate time. Since the tension of the thinned portion 28 is lowered and extended, the bump electrode 5 moves in the direction opposite to the portion 28. The etching rate can be adjusted by the amount of the etchant 29, the degree of dilution, and the temperature.

  Heretofore, it has been described that the position of the bump electrode 5 on the thin film sheet 9 fixed to the ceramic ring 7 is corrected and the ceramic ring 7 is fixed to the wiring board. However, the ceramic ring 7 is fixed to the wiring board. Instead, a frame-like support similar to the ceramic ring 7 may be used as a jig for correcting the position of the bump electrode 5. In this case, as shown in FIG. 10, only the position-corrected thin film sheet 9 fixed to a jig (not shown) is attached to the attachment position of the wiring board 4 (ring-shaped region indicated by a virtual line). Attach and remove the jig.

  As shown in FIG. 11A, the probe card 1 may be assembled by applying distortion to the ceramic ring 7 to which the contact sheet 2 is fixed. In this way, the position of the bump electrode 5 on the thin film sheet 9 can also be corrected. A one-dot chain line in the figure indicates a position when the ceramic ring 7 is assembled in an original elliptical shape. As indicated by the solid line, the ceramics ring 7 is distorted by contracting in the direction BB ′ and extending in a direction perpendicular to the BB ′ direction by applying an inward force in the direction along the line BB ′. It is in.

  For example, when an 8 inch wafer is burned in, if the contact sheet 2 is fixed to an SiC ceramic ring 7 having an outer diameter of 240 mm, an inner diameter of 222 mm, and a thickness of 2 mm, the force applied inward to the ceramic ring 7 is from several kg. If it is about several tens of kg, the degree of distortion at the outermost periphery is about several um to 100 um. Since ceramics cause cracking when an external pressure of a certain level or more is applied, a strain of less than 100 μm is appropriate.

  In order to keep the degree of distortion as high as possible, it is preferable to remove the scratches by polishing the surface of the ceramic with fine particles, and it is preferable to remove sharp scratches by chemical etching or the like.

  Note that if the probe card 1 is assembled with the ceramic ring 7 simply being distorted, the ceramic ring 7 is deformed in a direction that relaxes the distortion, that is, returns to its original state. In order to prevent this, it is necessary to fix the ceramic ring 7 to the wiring board 4 with an adhesive or the like, or to fix it on the wiring board 4 with a pressing jig or the like. FIG. 11A shows a state where the adhesive is fixed.

  FIG. 11B shows a state in which the ceramic ring 7 to which the contact sheet 2 is fixed is distorted and its shape is fixed by the tape 30, and then the ceramic ring 7 is fixed to the wiring board 4. Pull the adhesive tape 30 having high tension, such as Kapton tape, at the ends of the ceramics ring 7 in the most extended direction (in this case, the intersection with BB ') so that the ends at the ends are pulled toward each other. It is effective to stick. The tape 30 may be removed after the fixing to the wiring board 4 is completed.

  As described above, the effect of correcting the position by applying distortion to the ceramic ring 7 was examined. Specifically, for the contact sheet 2 (ceramics ring 7 + thin film sheet 9 with bumps) of the probe card 1 corresponding to a 300 mm wafer, eight bump electrodes 5 on the outermost periphery as shown in the figure, that is, Eight bump electrodes 5 at 45 degree intervals located vertically and horizontally and obliquely with respect to the design center corresponding to the wafer center were selected, and the bump positions before and after correction were measured.

  FIG. 12 shows the measurement results. On the vertical axis, the difference between the distance from the design center of the probe card 1 (actual value) and the corresponding design distance (design value) was taken. With the movement of the bump electrode 5 to the outside as a plus and the movement to the inside as a minus, the measurement results before correction are plotted with circles, and the measurement results after correction are plotted with squares. A one-dot chain line represents a sine curve fitted to each measurement point. It is obvious that the position correction approaches the design value.

  If the probe card 1 in which the bump electrode 5 is corrected as described above is used, there is no contact failure with the electrode 32 of the semiconductor wafer 31, no reinspection is required, the inspection lead time is shortened, and the quality is improved. Leads to.

  The bump electrode 5 is given as a representative example of the probe electrode, and may be, for example, an acicular or pyramidal electrode. The ceramic ring 7 may also be a frame-like support body (support jig) made of ceramics or other materials.

  The probe card for semiconductor integrated circuit inspection and the manufacturing method thereof according to the present invention can improve the positional accuracy of the probe electrode, so that the burn-in is performed by connecting to the microelectrode of the semiconductor wafer which is being miniaturized with high accuracy. Useful for.

The top view which shows schematic structure of the contact sheet in the probe card in one Embodiment of this invention Correlation diagram between in-plane tension distribution and displacement of contact sheet in Fig. 1 Thermal shrinkage characteristics of polymer materials used in the present invention and conventional contact sheets The top view explaining the 1st method of the present invention which carries out position correction of the probe electrode of a contact sheet Conceptual diagram for further explaining the position correction method of FIG. Configuration diagram of position correction apparatus of the present invention The top view explaining the 2nd method of the present invention which carries out position correction of the probe electrode of a contact sheet The top view explaining the 3rd method of the present invention which carries out position correction of the probe electrode of a contact sheet The top view explaining the 4th method of the present invention which carries out position correction of the probe electrode of a contact sheet The disassembled perspective view which shows schematic structure of the probe card in other embodiment of this invention. The top view explaining the schematic structure of the probe card in other embodiments of the present invention, and the fifth method of the present invention for correcting the position of the probe electrode The figure which shows the effect of the method of FIG. Configuration diagram of a conventional probe card Manufacturing process diagram of contact sheet in probe card of FIG.

Explanation of symbols

1 Probe card 2 Contact sheet (thin film with bumps)
4 Wiring board 5 Bump electrode (probe electrode)
6 Isolated pattern electrode (second electrode)
7 Ceramics ring 8 Cu layer 9 Thin film sheet
10 Two-layer substrate
12 Tension change section
13 Heat source
14 Seizing prevention plate
15 Wafer tray
16 XY moving stage
17 Recognition camera
18 Heat source unit
31 Semiconductor wafer
32 pad electrode

Claims (16)

For testing a semiconductor integrated circuit having a thin film sheet formed on a main surface and having a plurality of probe electrodes for conducting a plurality of semiconductor integrated circuit elements formed on a semiconductor wafer in a lump on one main surface and fixed to a support at an outer peripheral portion A probe card,
The thin film sheet fixed to the support is subjected to tension strain by forming a local tension changing portion, and the plurality of probe electrodes are electrically connected to the electrodes of the semiconductor integrated circuit elements of the semiconductor wafer. A probe card for testing a semiconductor integrated circuit disposed at a predetermined position to be connected.   2. The probe card for testing a semiconductor integrated circuit according to claim 1, wherein the tension changing portion of the thin film sheet is formed on the outer peripheral side with respect to the formation region of the plurality of probe electrodes. A plurality of probe electrodes for electrically conducting a plurality of semiconductor integrated circuit elements formed on a semiconductor wafer at a time are formed on one main surface, and have a thin film sheet fixed to a support at an outer peripheral portion in a tensioned state. A probe card for testing a semiconductor integrated circuit,
The support to which the thin film sheet is fixed is ring-shaped, and is fixed to a rigid wiring board that is distorted in at least one direction of the surface of the support, and a plurality of probes of the thin film sheet A probe card for testing a semiconductor integrated circuit, wherein the electrode is disposed at a predetermined position where the electrode is electrically connected to the electrode of each semiconductor integrated circuit element of the semiconductor wafer. For testing a semiconductor integrated circuit having a thin film sheet formed on a main surface and having a plurality of probe electrodes for conducting a plurality of semiconductor integrated circuit elements formed on a semiconductor wafer in a lump on one main surface and fixed to a support at an outer peripheral portion When manufacturing probe cards,
By forming at least one local tension changing portion that generates a tensile strain on the thin film sheet fixed to the same or different frame-shaped support as the support, the positions of the plurality of probe electrodes of the thin film sheet are determined. A method of manufacturing a probe card for testing a semiconductor integrated circuit, wherein the probe is corrected to a predetermined position electrically connected to an electrode of each semiconductor integrated circuit element of the semiconductor wafer.   5. The method of manufacturing a probe card for testing a semiconductor integrated circuit according to claim 4, wherein a heat shrinkage portion or an elastic modulus lowering portion is formed as the tension changing portion.   6. The method of manufacturing a probe card for testing a semiconductor integrated circuit according to claim 5, wherein when the thin film sheet is heated to form the heat shrinkage portion, the heating amount and the heating position are controlled while measuring the position of the probe electrode.   7. The semiconductor integrated circuit according to claim 5, wherein a hot air, an electric heater, a laser, or a halogen lamp is used as a heat source when the thin film sheet is heated to form the heat shrinkage portion. Manufacturing method of probe card for inspection.   8. The method of manufacturing a probe card for testing a semiconductor integrated circuit according to claim 7, wherein the light is condensed by an optical fiber when a halogen lamp is used.   6. The method for manufacturing a probe card for testing a semiconductor integrated circuit according to claim 5, wherein holes are formed in the thin film sheet by physical means in order to form the elastic modulus lowering portion.   10. The method for manufacturing a probe card for testing a semiconductor integrated circuit according to claim 9, wherein when a laser is used as a physical means, a heat-resistant material is provided on the base of the thin film sheet.   6. The method of manufacturing a probe card for testing a semiconductor integrated circuit according to claim 5, wherein the thin film sheet is thinned by mechanical polishing or chemical etching in order to form the elastic modulus lowering portion. For testing a semiconductor integrated circuit having a thin film sheet formed on a main surface and having a plurality of probe electrodes for conducting a plurality of semiconductor integrated circuit elements formed on a semiconductor wafer in a lump on one main surface and fixed to a support at an outer peripheral portion When manufacturing probe cards,
By fixing the frame-shaped support body to which the thin film sheet is fixed to a wiring board having a rigidity by applying a strain that generates a tensile strain to the thin film sheet, the positions of the plurality of probe electrodes of the thin film sheet are determined. A method of manufacturing a probe card for testing a semiconductor integrated circuit, wherein the probe is corrected to a predetermined position electrically connected to an electrode of each semiconductor integrated circuit element of the semiconductor wafer.   13. The method of manufacturing a probe card for testing a semiconductor integrated circuit according to claim 12, wherein the distortion of the frame-shaped support is less than 100 um in the surface direction of the thin film sheet.   13. The method of manufacturing a probe card for testing a semiconductor integrated circuit according to claim 12, wherein the distortion of the frame-shaped support is applied by joining desired portions with a tape. Thin film sheet with probe electrode
Fixing a multilayer base material having a conductor layer and an insulating elastic material layer on the front and back in a state where tension is applied to a frame-like support at the outer periphery thereof;
Forming a hole reaching the conductor layer from the insulating elastic material layer side in a predetermined plurality of locations of the multilayer substrate;
A step of forming a plurality of probe electrodes by arranging a conductor material so as to be electrically connected to the conductor layer at each hole; and
Forming at least a plurality of second electrodes that are electrically connected to each of the plurality of probe electrodes by etching the conductor layer so as to leave the conductor layer at each hole. A method for manufacturing a probe card for testing a semiconductor integrated circuit according to claim 4. For testing a semiconductor integrated circuit having a thin film sheet formed on a main surface and having a plurality of probe electrodes for conducting a plurality of semiconductor integrated circuit elements formed on a semiconductor wafer in a lump on one main surface and fixed to a support at an outer peripheral portion A position correction device for correcting the positions of a plurality of probe electrodes of the thin film sheet to predetermined positions electrically connected to the electrodes of each semiconductor integrated circuit element of the semiconductor wafer when manufacturing a probe card, ,
A stage for holding the thin film sheet fixed to the same or different frame-shaped support as the semiconductor wafer and the support;
A recognition means for recognizing an arbitrary position of the semiconductor wafer and the thin film sheet held on the stage;
A heat source unit and a heat quantity controller for applying heat to the thin film sheet;
A moving means for moving at least one of the stage and the heat source unit in order to place the thin film sheet at a heating position by the heat source unit, and an X, Y, Z position controller;
Based on the amount of deviation between the position of the probe electrode of the thin film sheet recognized by the recognition means and the position of the corresponding electrode of the semiconductor integrated circuit element, a local heating contraction part that generates a tensile strain in the thin film sheet is formed. A position correction apparatus comprising: an integrated control device that commands a heating position and a heating time to the X, Y, Z position controller and the heat quantity controller.

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