JP2009098153A - Method for manufacturing thin film probe - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an inspection apparatus for inspecting semiconductor elements at narrow pitches with a stable contact property and a satisfactory assembling property. <P>SOLUTION: The present invention relates to: a probe card using a probe sheet 6, lined with a metal sheet, which has a first contact terminal 4 that makes electrical contact with electrodes of objects for inspection formed at narrow pitches, a wire extending from the first contact terminal, and a second contact terminal 5 that makes electrical contact with the wire, both of the contact terminals being formed with use of etching holes of crystalline members; and a method for inspecting (method for manufacturing) semiconductor devices with use of the probe card. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a probe sheet, a probe card, a semiconductor inspection apparatus, and a semiconductor device manufacturing method.

  Of the semiconductor device manufacturing process performed after the semiconductor element circuit is formed on the wafer, an example of the flow of the inspection process is mainly shown in the package product, bare chip, and CSP, which are typical shipping forms of the semiconductor device, as an example. It was shown to.

  In the manufacturing process of the semiconductor device, the following three inspections are performed roughly as shown in FIG. First, it is performed in a wafer state in which a semiconductor element circuit and an electrode are formed on the wafer, and a wafer inspection for grasping a conduction state and an electric signal operating state of the semiconductor element, and then the semiconductor element is unstable in a state of high temperature or high applied voltage These include burn-in inspection for extracting a semiconductor element and selection inspection for grasping product performance before shipping a semiconductor device.

  As a prior art of an apparatus (semiconductor inspection apparatus) used for such a semiconductor device inspection, there is Patent Document 1 (hereinafter referred to as Prior Art 1). The technique includes a thin film support frame, a flexible thin film secured to the support frame, and a plurality of test probes provided in the central region of the outer surface of the thin film so as to be pressed onto the contact pads of the device being tested. A contact, a plurality of conductive traces on the membrane connecting each probe contact to the test circuit, and the membrane central region when the probe test contact is pressed onto the contact pad of the device to be tested. Self-rotating means (automatically comprising a pressure plate fixed to the inner surface of the thin film in the central region and a hemispherical pivot post whose head presses the center of the pressure plate in a pivotal manner) A leveling thin film test probe is described.

  As another prior art, there is Patent Document 2 (hereinafter referred to as Prior Art 2). In this technology, a support member and a plurality of contact terminals with a sharpened tip are provided in the probing side region, and a ground is sandwiched between a plurality of lead wires and an insulating layer that are electrically connected to each of the contact terminals. A multi-layer film having a layer, a frame fixed to the back side of the multi-layer film, a pressing member, and a contact pressure for bringing the tip of each contact terminal into contact with each electrode is applied from the support member to the pressing member. And a compliance mechanism in which when the tip surface of the contact terminal group is brought into contact with the surface of the electrode group, the tip surface of the contact terminal group projects parallel to the surface of the electrode group. And an inspection system that performs an inspection by bringing the connection device into contact with an electrode of an object to be inspected.

Japanese Patent Application Laid-Open No. 7-7056 (Japanese Patent Application No. 6-28200) Japanese Patent Laid-Open No. 11-23615 (Japanese Patent Application No. 10-49912)

  However, the prior art 1 is a method in which the peripheral portion of the thin film is fixed to press the contact terminal to press the contact terminal, and the whole thin film is stretched and stretched. Therefore, the parallel placement of the pressure plate and the object to be inspected depends on the tension of the thin film, and when the thin film is extended from the lower surface of the wiring board, a large tensile force is applied to the thin film, so that the wiring is easily disconnected. Therefore, the amount of the thin film is limited. Moreover, since the thin film is in an extended state, the arrangement of the contact terminal tip portion is enlarged, and it is difficult to ensure the tip position accuracy. Further, the pivot post and the pressure plate do not have an initial parallel mechanism, and there is a possibility that the object to be inspected may come into contact with each other in a tilted state, and the object to be inspected is likely to be damaged.

  On the other hand, in the above prior art 2, both the contact pressure load control and the parallel scanning are performed by the spring probe provided around the center pivot. Therefore, it is possible to set the spring pressure so that both control operations are compatible. It is difficult and further has a problem that the pressing member is displaced laterally. In addition, the positional accuracy of the tip of the contact terminal fluctuates in conjunction with the amount of protrusion of the thin film, so that it is difficult to ensure the accuracy of the tip position.

  As described above, in any of the conventional techniques, probing corresponding to the narrow pitch multi-pin accompanying the increase in the density of the test object such as a semiconductor element can be performed without damaging the test object and the contact terminal. It was unsatisfactory with respect to the point of trying to realize a system that secures the positional accuracy of the tip of the contact terminal, is stable at a low load, and is easy to assemble.

  In addition, with the recent high integration of semiconductor elements, the pitch of electrodes (for example, about 0.1 mm or less) and the density increase further, and in addition, the reliability can be grasped more clearly. Since an operation test at a high temperature (for example, 85 ° C. to 150 ° C.) tends to be performed, an inspection apparatus that can cope with these is desired.

  An object of the present invention is to provide an inspection apparatus capable of ensuring the tip position accuracy of a contact terminal and reliably inspecting a semiconductor element having a narrow pitch electrode structure.

  Another object of the present invention is to provide a method of manufacturing a semiconductor device that ensures good connection to peripheral electrodes and has improved reliability.

  Another object of the present invention is to provide a method for manufacturing a semiconductor device that reduces the manufacturing cost of the entire semiconductor device by improving the sheet mounting property, suppressing the assembly cost of the inspection device, and reducing the cost of the inspection process of the semiconductor device. Is to provide.

In order to achieve any of the above objects, the outline of a representative one of the inventions disclosed in the present application will be briefly described as follows.
(1) A probe sheet having a plurality of contact terminals that come into contact with electrodes provided on an object to be inspected, wirings drawn from the contact terminals, and a plurality of peripheral electrodes electrically connected to the wirings The probe terminal is characterized in that the contact terminal and the peripheral electrode have a pyramid shape or a truncated pyramid shape.
(2) A probe sheet having a plurality of contact terminals in contact with electrodes provided on the object to be inspected, wirings drawn from the contact terminals, and a plurality of peripheral electrodes electrically connected to the wirings A probe sheet comprising: a first metal film formed so as to surround the plurality of contact terminals; and a second metal film formed so as to surround the first metal film. .
(3) A probe card having a multilayer wiring board having a plurality of contact terminals in contact with the electrodes provided on the object to be inspected, wirings drawn from the contact terminals, and electrodes electrically connected to the wirings The probe card is characterized in that the electrode of the multilayer wiring board and the wiring are electrically connected via a peripheral electrode having a pyramid shape or a truncated pyramid shape.
(4) A multilayer wiring board that is electrically connected to a tester that inspects the electrical characteristics of the object to be inspected, a plurality of peripheral electrodes that are connected to the electrodes of the multilayer wiring board, and electrodes provided in the object to be inspected A probe sheet having a plurality of contact terminals in contact with each other;
Means for applying a pressing force to a region where the plurality of contact terminals of the probe sheet are formed, wherein the probe sheet is further formed so as to surround the plurality of contact terminals. The first metal film and a second metal film formed so as to surround the first metal film, and the means for applying the pressing force is formed in the region where the second metal film is formed. A probe card, wherein the probe card is disposed so that the region where the first metal film is formed and the region where the plurality of contact terminals are formed can be tilted.
(5) A semiconductor device comprising a step of forming a circuit on a wafer to form a semiconductor element, a step of inspecting the electrical characteristics of the semiconductor element, and a step of dicing the wafer and separating the semiconductor element. A plurality of contact terminals contacting the electrodes of the semiconductor element, and a first metal film formed so as to surround the plurality of contact terminals in the step of inspecting the electrical characteristics of the semiconductor element And a probe sheet having a second metal film formed so as to surround the first metal film, a region of the probe sheet in which the first metal film is formed, and the plurality of contact terminals are formed And a means for applying a pressing force to the formed region, and inspecting the plurality of contact terminals in contact with electrodes provided on the semiconductor element, using the probe card Law.

  The effects obtained by the representative ones of the inventions disclosed in the present application will be briefly described as follows.

  (1) It is possible to provide an inspection apparatus capable of ensuring the tip position accuracy of the contact terminal and reliably inspecting a semiconductor element having a narrow pitch electrode structure.

  (2) It is possible to provide a method for manufacturing a semiconductor device that ensures good connection to electrodes and improves reliability.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that components having the same function are denoted by the same reference symbols throughout the accompanying drawings for describing the embodiment of the invention, and the repetitive description thereof is omitted.

  In this specification, main terms are defined as follows. Regardless of its form, the semiconductor device may be a wafer-formed circuit (for example, FIG. 1A) or a semiconductor element (for example, FIG. 1B). After that, it may be packaged (QFP, BGA, CSP, etc.). FIG. 1 shows an example of an object to be inspected, and it does not matter whether the arrangement of the electrodes 3 is a peripheral electrode arrangement or a full-surface electrode arrangement. The probe sheet refers to a sheet having contact terminals that come into contact with an electrode to be inspected and wiring drawn from the contact terminals. The probe card refers to a structure (for example, the structure shown in FIG. 2) that functions as a connector that is connected to an electrode to be inspected and electrically connects a tester that is a measuring instrument and the object to be inspected. .

  The structure of the probe card according to the present invention will be described with reference to FIGS. FIG. 2A is a cross-sectional view showing the main part of the first embodiment of the probe card according to the present invention, and FIG. 2B is a perspective view showing the main components in an exploded manner. . The probe card according to the first embodiment is fixed to the center of a support member (upper fixing plate) 7 and an intermediate plate 24 screwed to the support member 7 so as to be adjustable in the height direction. A spring probe 12 loaded with a spring 12b that has a protrusion 12a and functions as a center pivot, and that applies a pressing force to the probe sheet 6 via a push piece 22 that is movable with the tip of the protrusion 12a as a fulcrum. Between the frame 21 adhered and fixed to the back surface so as to surround the region where the plurality of contact terminals 4 of the probe sheet 6 are formed, and the back surface of the region where the contact terminals 4 of the probe sheet 6 are formed A cushioning material 23 such as a sheet and a push piece 22 are provided at the center, and an intermediate plate 24 screwed to the frame 21 is included. The support member 7 is parallelized by the parallel adjustment screw 25 provided on the support member 7 so that the surface of the contact terminal 4 of the probe card and the corresponding electrode surface of the semiconductor element are parallel.

  In this probe card, a desired substantially constant pressing force (desired by the spring probe 12) against the pressing piece 22 held so as to be slightly tiltable by the protrusion 12a at the tip of the spring probe 12 installed at the center of the intermediate plate 24. For example, in the case of about 500 pins, the compliance is such that a desired substantially constant pressing force is applied to an area where a plurality of contact terminals are formed by applying (pressing) a pressing amount of about 150 N to about 20 N). The mechanism is used. A conical groove 22 a that engages with the protrusion 12 a is formed at the center of the upper surface of the push piece 22.

  2 (a) and 2 (b), the probe sheet 6 forms a plurality of contact terminals 4 for contacting the electrode group 3 of the semiconductor element 2 in the central region portion on the probing side of the sheet, A metal film 30b is formed in a region corresponding to the metal film 30a and the frame 21 so as to surround the contact terminal 4 doubly, and signal exchange with the multilayer wiring board 50 is performed on the periphery of the four sides of the probe sheet 6. A plurality of peripheral electrodes 5 are formed, a metal film 30c is formed in a region corresponding to the peripheral electrode fixing plate 9 so as to surround the peripheral electrode 5, and a large number between the contact terminals 4 and the peripheral electrodes 5 is formed. It is formed by the probe sheet 6 on which the lead wiring 20 is formed. Further, a frame 21 is bonded and fixed to the back surface of the probe sheet 6 in the region where the contact terminals 4 are formed, and the peripheral electrode is fixed to the back surface of the portion where the peripheral electrode 5 of the probe sheet 6 for signal transmission / reception is formed. The plate 9 is bonded and fixed. Further, the frame 21 is screwed to the intermediate plate 24. The spring plate 12 is fixed to the intermediate plate 24, and the protrusion 12a at the lower end is configured to engage with a conical groove 22a formed at the center of the upper surface of the push piece 22.

  In addition, as shown in FIG. 3B, the metal film 30a may be formed also in the central part when there is a gap in the central part of the group of the plurality of contact terminals 4 as shown in FIG. In addition, assembling can be improved by forming a pattern of positioning knock pin holes 30e and screw insertion holes 30f in the metal film 30c.

  For example, as shown in FIG. 13, the knock pin hole 30e for positioning the metal film 30c, the corresponding knock pin hole 50e of the multilayer wiring board 50, the knock pin hole 33e of the lower pressing plate 33, and the peripheral electrode fixing plate 9 Using the knock pin hole 9e, the whole is positioned by the knock pin 34, and the peripheral electrode fixing plate 9 is fixed to the lower pressing plate 33 with screws. Next, the peripheral holding plate 32 is sandwiched between the peripheral electrode fixing plate 9 fixed to the probe sheet 6 so as to surround the group of the peripheral electrodes 5, the peripheral holding plate 32, the knock pin hole 9 e of the peripheral electrode fixing plate 9 and the peripheral holding plate. Positioning with the knock pin 34 using the knock pin hole 32e of the plate 32 and screwing and fixing to the lower holding plate 33, the group of the peripheral electrodes 5 is pressed against the electrode 50a of the multilayer wiring board 50 through the buffer material 31. Connect.

  Here, by forming a circular metal film 30a and a metal film 30b (in a region corresponding to the frame 21) so as to doublely surround the group of contact terminals 4 of the probe sheet 6, the inner metal film 30a In the probe sheet region having the flexibility without the metal film 30 between the metal film 30b formed in the region corresponding to the frame 21 and the metal film 30a on the inner side thereof, ensuring the positional accuracy of the contact terminal group, It is possible to realize a structure that can perform a copying operation while keeping a portion backed by a metal film on a slight inclination of the wafer surface to be contacted. That is, since the plurality of contact terminals 4 are surrounded by the metal film 30a, it is possible to prevent an excessive stress from being applied to the region where the contact terminals are formed during the inspection operation, and therefore, accurate contact with the electrode to be inspected. Contact can be realized. In addition, by using a material having a linear expansion coefficient substantially equal to that of a silicon wafer such as 42 alloy or Invar, the metal film 30 can be substantially matched with the object to be inspected (silicon wafer), and the high temperature Even at times, the position accuracy of the contact terminal tip can be ensured.

  Further, as described above, by forming the metal film 30c in the region corresponding to the peripheral electrode fixing plate 9 so as to surround the group of the peripheral electrodes 5 in the peripheral portion of the probe sheet 6, the strength of the probe sheet 6 can be ensured, Positional accuracy of the peripheral electrode group can be ensured, and handling during assembly is facilitated. In addition, assembly work can be facilitated by forming positioning holes and screw insertion holes with accurate position accuracy and shape in the metal film 30c by a batch etching process using a photolithography mask.

  Next, a second embodiment of the connection device according to the present invention will be described with reference to FIG. FIG. 3A is a cross-sectional view showing the main part of the second embodiment of the connection device according to the present invention, and FIG. 3B is a perspective view showing the main components in an exploded manner. . The second embodiment of the present connecting device is different from the first embodiment in that, as a means for applying a pressing force to the pressing piece 22, a spring plunger 13 and a protruding pressing pin are used instead of the spring probe 12. 14 or a point using a structure in which the intermediate plate 24 to which the spring plunger 13 is fixed and the support member 7 are held in a movable state by the plate spring 15, or a central portion of the contact terminal group 4 of the metal film 30a. If there is a gap, the metal film 30d is also formed at the center. Any change can be implemented in combination with the structure disclosed in the first embodiment as necessary.

  Note that the compliance mechanism that applies a desired substantially constant pressing force is not limited to the above-described embodiment, and various modifications may be made.

  Next, an example of a probe sheet (structure) used in the probe card will be described with reference to FIG.

  FIG. 4 shows a truncated pyramid shape using, in particular, a truncated pyramidal hole formed by anisotropic etching in a silicon wafer 80 as a mold material in the manufacturing process for forming the probe card shown in FIG. The contact terminal tip and the lead-out wiring 20 were formed integrally with a polyimide sheet, a metal film was bonded to the polyimide sheet with a polyimide adhesive sheet, and the metal film was formed by etching as a reinforcing plate and positioning knock pin holes. A manufacturing process for forming the probe sheet 6 is shown in the order of steps.

  First, the step shown in FIG. In this process, a silicon dioxide film 81 of about 0.5 μm is formed by thermal oxidation on both sides of the (100) surface of a silicon wafer 80 having a thickness of 0.2 to 0.6 mm, a photoresist is applied, and a pyramid is formed by a photolithography process. After forming the pattern in which the photoresist at the position where the trapezoidal hole is to be formed is formed, the silicon dioxide film 81 is etched away with a mixed solution of hydrofluoric acid and ammonium fluoride using the photoresist as a mask, and the silicon dioxide film 81 is removed. As a mask, the silicon wafer 80 is anisotropically etched with a strong alkali solution (for example, potassium hydroxide) to form a truncated pyramid-shaped etching hole 80a surrounded by the (111) plane.

  Here, in this embodiment, the silicon wafer 80 is used as a mold material. However, as the mold material, any material having crystallinity may be used, and various changes can be made within the range. In this embodiment, the hole formed by anisotropic etching has a truncated pyramid shape. However, the shape of the hole may be a truncated pyramid, and the shape of the contact terminal 4 that can secure a stable contact resistance with a small needle pressure can be formed. Various changes can be made within the range. Needless to say, the electrodes to be contacted may be contacted by a plurality of contact terminals.

  Next, the process shown in FIG. 4B is performed. In this process, the silicon dioxide film 81 used as a mask is removed by etching with a mixed solution of hydrofluoric acid and ammonium fluoride, and the entire surface of the silicon wafer 80 is again thermally oxidized in wet oxygen to form the silicon dioxide film 82. About 0.5 μm is formed, and a conductive coating 83 is formed on the surface thereof. Next, a polyimide film 84 is formed on the surface of the conductive coating 83, and then a polyimide film at a position where the contact terminals 4 are to be formed. A step of removing 84 until reaching the surface of the conductive coating 83 is performed.

  As the conductive coating 83, for example, a chromium film having a thickness of about 0.1 μm is formed by forming a chromium film by sputtering or vapor deposition, and copper is sputtered on the surface on which the chromium film is formed. Alternatively, a copper film having a thickness of about 1 μm may be formed by film formation by vapor deposition. A copper film having a thickness of several μm may be formed on the copper film by plating to increase the resistance to laser processing. In order to remove the polyimide film 84, for example, laser drilling or an aluminum mask may be formed on the surface of the polyimide film 84 and dry etching may be used.

  Next, the process shown in FIG. 4C is performed. First, the conductive coating 83 exposed at the opening of the polyimide film 84 is electroplated using the conductive coating 83 as an electrode and a material having high hardness as a main component, so that the contact terminal 4 and the connection electrode portion 4b are integrated. Form as. As the plating material having high hardness, for example, nickel 8a, rhodium 8b, and nickel 8c may be sequentially plated to form the contact terminal portion 8 by integrally connecting the contact terminal 4 and the connection electrode portion 4b.

  Next, a conductive coating 86 is formed on the contact terminal portion 8 and the polyimide film 84, a photoresist mask 87 is formed, and then a wiring material 88 is plated.

  As the conductive coating, for example, chromium is formed by sputtering or vapor deposition to form a chromium film having a thickness of about 0.1 μm, and copper is formed on the surface on which the chromium film is formed by sputtering or vapor deposition. A copper film having a thickness of about 1 μm may be formed by film formation by the method. Further, copper may be used as the wiring material.

  Next, the process shown in FIG. 4D is performed. In this step, the photoresist mask 87 is removed, and the conductive coating 86 is removed by soft etching using the wiring material 88 as a mask. Then, an adhesive layer 89 and the metal film 30 are formed, and a photoresist mask 91 is formed on the metal film 30. Is.

  Here, as the adhesive layer 89, for example, a polyimide adhesive sheet or an epoxy adhesive sheet may be used. Further, as the metal film 30, 42 alloy (a linear expansion coefficient of 4 ppm / ° C. for an alloy of 42% nickel and 58% iron) or invar (for example, an alloy of 36% nickel and 64% iron for a linear expansion coefficient of 1.5 ppm / ° C.). ) And a metal sheet close to the linear expansion coefficient of the silicon wafer (silicon mold material) 80 is bonded to the polyimide film 84 in which the wiring material 88 is formed by the adhesive layer 89, and configured. In addition to improving the strength and area of the probe sheet 6 to be formed, it is possible to ensure positional accuracy under various circumstances such as prevention of displacement due to temperature during inspection. To this end, the metal film 30 may be made of a material having a linear expansion coefficient close to the linear expansion coefficient of the semiconductor element to be inspected in order to ensure the positional accuracy at the time of burn-in inspection.

In the bonding step, for example, the silicon wafer 80 on which the polyimide film 84 on which the contact terminal portion 8 and the wiring material 88 are formed, the adhesive layer 89 and the metal film 30 are overlapped and pressed at 10 to 200 kgf / cm ^2. However, a temperature higher than the glass transition temperature (Tg) of the adhesive layer 89 may be applied and heated and pressed in vacuum.

  Next, the process shown in FIG. In this step, after etching the metal film 30 with the photoresist mask 91, the process ring 95 is fixed to the metal film 30 with an adhesive 96, the protective film 97 is adhered to the process ring 95, and the center is hollowed out. The silicon dioxide 82 is removed by etching with a mixed solution of hydrofluoric acid and ammonium fluoride using the protective film 98 as a mask. When a 42 alloy sheet or Invar sheet is used as the metal film 30, spray etching may be performed with a ferric chloride solution. The photoresist mask may be a liquid resist or a film resist (dry film).

  Next, the process shown in FIG. In this step, the protective films 97 and 98 are peeled off, a silicon etching protection jig 100 is attached, and silicon is removed by etching. For example, the process ring 95 is screwed to the intermediate fixing plate 100d, and is mounted via an O-ring 100c between a stainless steel fixing jig 100a and a stainless steel lid 100b, and a silicon wafer 80, which is a mold material. May be removed by etching with a strong alkaline solution (for example, potassium hydroxide).

  Next, the process shown in FIG. 4G is performed. In this step, the protective jig 100 for silicon etching is removed, a protective film is adhered to the process ring 95 in the same manner as in FIG. 4D, and the silicon dioxide 82, the conductive coating 83 (chrome and copper) and the nickel 8a are etched. After removing the protective film, an adhesive 96b is applied between the probe sheet frame 21 and the metal film 30b, and between the peripheral electrode fixing plate 9 and the metal film 30c. It adheres to the position of.

  The silicon dioxide film 82 may be removed by etching with a mixed solution of hydrofluoric acid and ammonium fluoride, the chromium film may be removed by etching with a potassium permanganate solution, and the copper film and the nickel film 8a may be removed by etching with an alkaline copper etchant. .

  As a result of this series of etching processes, the rhodium plating 8b exposed on the contact terminal surface is not easily attached to the material of the electrode 3, such as solder or aluminum, is harder than nickel, is not easily oxidized, and has a contact resistance. This is because it is stable.

  Next, the polyimide film 84 and the adhesive layer 89 that are integrated along the outer periphery of the probe sheet frame 21 and the peripheral electrode fixing plate 9 are cut out to form the probe card 105 as shown in FIG. It becomes a probe sheet to be attached.

  Next, the manufacturing process of the probe sheet according to the second embodiment, which is slightly different from the above-described probe sheet, will be described with reference to FIG.

  5A to 5E show other manufacturing processes for forming the probe sheet in the order of steps.

  First, a pyramidal etching hole 80a is formed in the silicon wafer 80 shown in FIG. 4A, a silicon dioxide film 82 is formed on the surface thereof, and a connection terminal portion is formed on the surface of the conductive coating 83 formed thereon. A step of forming a photoresist mask 85 so as to open 8 is performed.

  Next, using the photoresist mask 85 shown in FIG. 5B as a mask, the conductive coating 83 is electroplated as a power feeding layer, and the contact terminal 4a and the connection electrode portion 4b are integrally formed. The photoresist mask 85 A step of removing is performed. As the plating material, for example, nickel 8a, rhodium 8b, and nickel 8c may be sequentially plated to form the contact terminal portion 8 integrally with the contact terminal 4a and the connection electrode portion 4b.

  Next, the step shown in FIG. In this step, the polyimide film 84b is formed so as to cover the contact terminal portion 8 and the conductive coating 83, and the polyimide film 84b at the position where the lead wiring connection hole from the contact terminal portion 8 is to be formed is It is removed until reaching the surface of the contact terminal portion 8, a conductive coating 86 is formed on the polyimide film 84b, a photoresist mask 87 is formed, and then a wiring material 88 is plated.

  In order to remove a part of the polyimide film 84b, for example, laser drilling or an aluminum mask may be formed on the surface of the polyimide film 84b and dry etching may be used.

  As the conductive coating, for example, chromium is formed by sputtering or vapor deposition to form a chromium film having a thickness of about 0.1 μm, and copper is formed on the surface on which the chromium film is formed by sputtering or vapor deposition. A copper film having a thickness of about 1 μm may be formed by film formation by the method. As the wiring material, copper plating or a material obtained by nickel plating on copper plating may be used.

  Next, the process shown in FIG. In this step, the photoresist mask 87 is removed, the conductive coating 86 is removed by etching using the wiring material 88 as a mask, the adhesive layer 89 and the metal film 90 are adhered, and the metal film 90 is etched with the photoresist mask. A desired metal film pattern is formed.

  Next, through steps similar to those shown in FIGS. 4E to 4G, a probe sheet attached to the probe card 105 is obtained as shown in FIG. 5E.

  About the manufacturing method of the probe sheet of a 3rd form, the manufacturing process is demonstrated with reference to FIG.

  The method for manufacturing the probe sheet is the same as the method for manufacturing the probe sheet described in FIGS. 4 and 5 except that a plating film for selective etching is initially formed. The selective plating film 61 is used to ensure the height of the contact terminal (the amount of protrusion from the polyimide film). In this manufacturing process, even when creating contact terminals using anisotropic etching holes as the mold material, the height of the contact terminals can be adjusted independently and freely while maintaining a narrow pitch and high density contact terminals. .

  Next, an example of a manufacturing method for forming a probe sheet using the selective plating film 61 will be described with reference to FIG.

  First, the process shown in FIG. In this step, a pyramidal etching hole is formed in the silicon wafer 80 in the same manner as in FIGS. 4A and 4B, and the silicon dioxide film 82 and the conductive coating 83 are formed on the surface thereof. Unlike FIG. 4B, a pattern of a photoresist 60 or a dry film is formed in a portion where the contact terminal portion 8 is formed.

  Next, the process shown in FIG. 6B is performed. The selective plating film 61 is plated using the conductive coating 83 as an electrode. As the selective plating film 61, for example, copper is plated by 10 to 50 μm.

  Next, the process shown in FIG. 6C is performed. In this step, a chromium film is formed on the surface of the photoresist 60 and the selective plating film (copper plating layer) 61, a polyimide film 62 is formed on the surface, and an aluminum mask 63 is formed on the surface of the polyimide film 62. Executed. Here, the reason why the chromium film having a thickness of about 0.1 μm is formed is to secure adhesiveness with the polyimide in the process, and the chromium film can be omitted.

  Next, the process shown in FIG. 6D is performed. In this step, the aluminum mask 63 formed on the surface of the polyimide film 62 is used to remove the polyimide film 62 and the photoresist 60 from the portion corresponding to the portion where the contact terminal portion 8 is formed by laser or dry etching. The

  Next, the process shown in FIG. In this step, the aluminum mask 63 is removed, electroplating is performed using a material having high hardness as a main component, with the conductive coating 83 and the selective plating film 61 as electrodes, and the contact terminal 4a and the connection electrode portion 4b are integrated. To form. As the plating material having high hardness, for example, nickel 8a, rhodium 8b, and nickel 8c may be sequentially plated to form the contact terminal portion 8 integrally with the contact terminal 4a and the connection electrode portion 4b.

  Next, in the same process as FIG. 4C to FIG. 4D, the pattern of the lead-out wiring 88 and the desired metal film 30 shown in FIG. 6F is formed.

  Next, the probe sheet shown in FIG. 6G is formed by the same steps as those in FIGS. 4E to 4G.

  The manufacturing process of the probe sheet according to the fourth embodiment will be described with reference to FIG.

  The probe sheet manufacturing method is the same as that shown in FIG. 6 except that a selective etching plating film is initially formed in order to ensure the height of the contact terminals (amount of protrusion from the polyimide film). This is the same as the probe sheet manufacturing method described in FIG. 6 is different from the process shown in FIG. 6 in that the photoresist 60 formed on the portion where the contact terminal portion 8 is formed is removed and the contact terminal portion is also integrally filled with polyimide.

  Next, an example of a manufacturing method for forming a probe sheet using the selective plating film 61 will be described with reference to FIG.

  First, the process shown in FIG. In this step, a pyramidal etching hole is formed in the silicon wafer 80 in the same manner as in FIGS. 6A and 6B, and the silicon dioxide film 82 and the conductive coating 83 are formed on the surface thereof. A pattern of a photoresist 60 or a dry film is formed on a portion where the contact terminal portion 8 is to be formed, and the selective plating film 61 is plated using the conductive coating 83 as an electrode. Thereafter, the photoresist 60 is completely removed until reaching the surface of the conductive coating 83, and then a chromium film 64 is formed, and a polyimide film in which the contact terminal portions are also integrally filled with the polyimide 62a is formed. In this case, the chromium film can be omitted.

  Next, the probe sheet shown in FIG. 6 (g) is formed by the same steps as those in FIGS. 6 (d) to 6 (g).

  As shown in FIGS. 7C and 7D, using the metal film as a mask, the polyimide adhesive layer and the polyimide film are removed around the contact terminal portion by laser or dry etching, and the metal film is used. A cantilever beam reinforced and a contact terminal portion supported by a wiring material or a cantilever beam as shown in FIG. 7E may be formed. With these doubly-supported or cantilever structures, the amount of variation in the height of the contact surface of the contact terminal can be absorbed. Needless to say, the structure of these cantilever beams or cantilever beams may be similarly formed by other probe sheet manufacturing methods.

  About the manufacturing method of the probe sheet of the 5th form, the manufacturing process is demonstrated with reference to FIG.

  In this probe sheet manufacturing method, the contact terminal portion 8 is formed using the photoresist 65, the photoresist 65 is once removed to expose the contact terminal portion 8, and the polyimide film 84b is covered with the polyimide film 84b. The probe sheet manufacturing method is the same as the probe sheet manufacturing method described in FIG.

  Next, an example of the above manufacturing method will be described with reference to FIG.

  First, the process shown in FIG. This process is the same process as that shown in FIGS. 6A to 6E. Using the pattern of the photoresist 65 on the surface of the selective plating film 61, the pyramidal etching hole formed in the silicon wafer 80 is used as a mold material. The contact terminal portion 8 is formed. Here, instead of the polyimide film 62 in FIG. 6c or the polyimide film 62a in FIG.

  Next, the process shown in FIG. 8B is performed. In this step, the photoresist 65 is removed to expose the opposite surface of the contact terminal portion 8 of the silicon wafer 80 and covered with the polyimide film 84b, and then an aluminum mask 63a is formed.

  Next, the process shown in FIG. 8C is performed. This step uses the aluminum mask 63a to remove the portion of the polyimide film 84b connected to the lead wire 88 up to the surface of the contact terminal portion 8, and then, in the same step as in FIG. The pattern of the adhesive layer 89 and the metal film 30 is formed.

  Next, the probe sheet shown in FIG. 8D is formed by the same steps as those in FIGS. 4E to 4G.

  As mentioned above, although several manufacturing methods of the probe sheet were described, the process can be combined suitably as needed.

  In order to prevent disturbance of the electric signal as much as possible as a probe for high-speed electric signal inspection, the probe sheet surface (both surfaces or one surface) or a probe sheet structure sandwiching a ground layer may be used. For example, a sputtered film of a conductive material is formed on the surface on which the metal film pattern is formed. As the sputtered film material, chromium, titanium, copper, gold, nickel or the like may be used alone or in combination.

  It is also possible to leave the metal film 30 as much as possible and use it as the ground layer 70. Further, as shown in FIG. 9, a copper film may be formed as a multilayer film between the adhesive layer 89 on the lead-out wiring 20 and the metal film 30 and used as the ground layer 70. Further, as shown in FIG. 10, for example, immediately after FIG. 4F, the silicon wafer 80 is removed by etching, and when the conductive coating 83 is exposed on the surface, a photoresist mask is formed to form the conductive coating. It is also possible to form the ground layer 70 at 83.

  As mentioned above, it cannot be overemphasized that it can apply to the probe card of any manufacturing method of the above-mentioned FIGS. 4-8 about the formation method of the ground layer of a probe sheet | seat.

  An example of the probe sheet 6 for installing a mounting component 72 such as a capacitor or a resistor in the vicinity of the contact terminal in order to prevent electrical signal disturbance in order to enable a faster electrical signal inspection. As shown in FIG. FIG. 14A is a cross-sectional view in which the mounting layer 72 is connected to the probe sheet 6 formed by sequentially laminating the ground layer 70 and the power supply layer 71, and FIG. 14B shows the mounting component on the surface of the probe sheet 6. A schematic plan view of 72 connected is shown. For example, when the mounting component 72 is connected to the probe sheet 6 in the state as shown in FIG. 14B, the wiring resistance value is lowered by increasing the wiring width of the ground and power supply wirings as much as possible. Place the power supply wiring next to each other (pair wires), and drill the insulating layer in the part that will be the connection electrode of the components mounted on each wiring using a drilling technology such as laser or dry etching. Then, a via forming hole 72a is provided, and the hole is filled with a conductive material 72b such as solder or plating, and the mounting component 72 is bonded to the probe sheet 6 by solder bonding or metal diffusion bonding.

  The pattern of the peripheral electrode group 5 for conducting the group of the peripheral electrodes 5 of the probe sheet 6 to the electrode group 50a formed on the surface of the multilayer wiring board 50 and the pattern of the electrode group 50a of the multilayer wiring board 50 corresponding thereto An example is shown in FIG.

  The wiring 20 and the peripheral electrode 5 of the probe sheet 6 are formed in such a manner that contact terminals protrude from one surface of the polyimide sheet, for example, by forming a thin film wiring by the manufacturing process of FIGS. Is formed. Therefore, since the wiring 20 is covered with polyimide, the wiring 20 does not come into contact with the electrode group 50a formed on the surface of the multilayer wiring board 50, and a short circuit is not caused. The group of the peripheral electrodes 5 of the probe sheet 6 is positioned by using the knock pin 34 described above to the electrode group 50a connected to the internal wiring 50b of the multilayer wiring board 50 by the through-hole via 50d, and the buffer material 31 is sandwiched between them. The two electrodes are pressed against each other by pressing with the peripheral pressing plate.

  Here, forming a plurality of peripheral electrodes 5 of the probe sheet 6 with respect to the individual electrodes 50a reduces the possibility of contact failure due to abnormality of the contact surface, foreign matter, unevenness, etc., and provides stable contact. This is to ensure. Needless to say, a plurality of contact terminals may be provided on each peripheral electrode 5 if the electrodes have sufficient dimensions, and may be one.

  Here, when the probe sheet 6 is formed by the manufacturing process of FIGS. 4 to 8, the peripheral electrode 5 can be a contact terminal having a pyramid shape or a truncated pyramid shape. Compared with contact between each other, a stable contact characteristic value can be realized at a low contact pressure with a contact terminal having hardness, and a connection with good tip position accuracy can be realized because it is formed by a photolithography process. Since the tip position accuracy is good for the above reason, accurate connection with the electrode group 50a of the multilayer wiring board 50 can be easily realized only by alignment by the positioning holes. Above all, the peripheral electrodes 5 for connection to the electrode group 50a of the multilayer wiring board can be formed together with the contact terminals 4 for wafer electrode connection on the same surface side, which is efficient.

  Next, a semiconductor inspection apparatus using the probe card according to the present invention described above will be described with reference to FIG.

  FIG. 11 is a diagram showing an overall configuration of an inspection system including a semiconductor inspection apparatus according to the present invention. FIG. 11 shows a test apparatus that performs an electrical characteristic inspection by applying a desired load to the surface of the wafer 1. In this state, the load of the spring probe 12 is applied to all the contact terminals, and the contact terminals 4, the lead wires 20, the peripheral electrodes 5, the electrodes 50a of the wiring board 50, the internal wires 50b, and the connection terminals 50c that are in contact with the electrodes 3 of the wafer 1. The electrical signal for inspection is transmitted / received to / from a tester (not shown) for inspecting the electrical characteristics of the semiconductor element.

  In the entire configuration of the inspection system, the probe card is configured as a wafer prober. This inspection system includes a sample support system 160 that supports a semiconductor wafer 1 that is an object to be inspected, a probe card 120 that contacts an electrode 3 of the object to be inspected (wafer) 1 and transmits and receives electrical signals, and a sample support system. A drive control system 150 that controls the operation of 160, a temperature control system 140 that controls the temperature of the object 1 to be inspected, and a tester 170 that inspects the electrical characteristics of the semiconductor element (chip) 2. The semiconductor wafer 1 has a large number of semiconductor elements (chips) arranged, and a plurality of electrodes 3 as external connection electrodes are arranged on the surface of each semiconductor element. The sample support system 160 includes a sample stage 162 that is detachably mounted on the semiconductor wafer 1, is provided substantially horizontally, an elevating shaft 164 that is vertically disposed so as to support the sample stage 162, and the elevating axis. The elevating drive unit 165 that elevates and drives the 164 and the XY stage 167 that supports the elevating drive unit 165 are configured. The XY stage 167 is fixed on the housing 166. The raising / lowering drive part 165 is comprised from a stepping motor etc., for example. The positioning operation of the sample stage 162 in the horizontal and vertical directions is performed by combining the movement operation of the XY stage 167 in the horizontal plane and the vertical movement by the elevating drive unit 165. The sample table 162 is provided with a rotation mechanism (not shown) so that the sample table 162 can be rotated and displaced in the horizontal plane.

  A probe system 120 is disposed above the sample stage 162. That is, for example, the probe card 120 and the multilayer wiring board 50 shown in FIG. 2 are provided in a posture facing the sample stage 162 in parallel. Each contact terminal 4 is provided on the wiring board 50 through the lead wire 20 provided on the probe sheet 6 of the probe card 120 and the peripheral electrode 5 through the electrode 50a and the internal wiring 50b of the multilayer wiring board 50. The connection terminal 50c is connected to the tester 170 via a cable 171 connected to the connection terminal 50c.

  Here, the wafer sheet heated to a desired temperature by the heater and the probe sheet on which the contact terminals for performing the electrical signal inspection in contact with the electrode of the wafer are formed are prevented from being displaced due to the temperature difference, and the alignment is performed. In order to carry out accurately and in a short time, a heating element capable of controlling the temperature may be formed in advance on the surface or inside of the probe sheet or probe card. As the heating element, for example, a metal material having a high resistance value such as Ni-Cr or a conductive resin having a high resistance value is directly formed on the probe sheet or the multilayer wiring board layer, or the sheet on which the material is formed is used as the probe sheet. You can stick it on the probe card. Alternatively, a warmed liquid as a heating element may be flowed through a tube in the heat block to bring the heat block into contact with the probe card.

  Unlike the conventional method in which the temperature of the probe card is determined from the heat radiation from the heated wafer and the contact during probing, the probe sheet is kept at the temperature at the time of inspection independently as described above, so that the wafer and the probe are maintained. It is possible to prevent the occurrence of a temperature difference during inspection between sheets, and it is possible to perform probing with accurate positional accuracy.

  The drive control system 150 is connected to the tester 170 via the cable 172. Further, the drive control system 150 sends a control signal to the actuator of each drive unit of the sample support system 160 to control its operation. That is, the drive control system 150 includes a computer inside, and controls the operation of the sample support system 160 in accordance with the progress information of the test operation of the tester 170 transmitted via the cable 172. Further, the drive control system 150 includes an operation unit 151, and accepts input of various instructions related to drive control, for example, manual operation instructions.

  The sample stage 162 is provided with a heater 141 for heating the semiconductor element 2. The temperature control system 140 controls the temperature of the semiconductor wafer 1 mounted on the sample table 162 by controlling the heater 141 or the cooling jig of the sample table 162. In addition, the temperature control system 140 includes an operation unit 151 and accepts input of various instructions related to temperature control, for example, manual operation instructions. Here, the temperature control may be performed by interlocking the temperature-controllable heating element provided in a part of the probe sheet or the probe card and the heater 141 of the sample stage 162.

  Hereinafter, the operation of the semiconductor inspection apparatus will be described. First, the semiconductor wafer 1 to be inspected is positioned and placed on the sample stage 162, and the XY stage 167 and the rotation mechanism are driven and controlled, and a plurality of semiconductor wafers 1 arranged on the semiconductor wafer 1 are controlled. A group of electrodes 3 formed on the semiconductor element is positioned immediately below a large number of contact terminals 4 arranged in parallel on the probe card 120. Thereafter, the drive control system 150 operates the elevating drive unit 165 until the entire surface of the multiple electrodes (contacted material) 3 comes into contact with the tip of the contact terminal until the sample is pushed up by about 30 to 100 μm. By raising the table 162, the tip of each of the multiple contact terminals 4 in which the flatness is ensured with high accuracy by projecting the region portion 4a where the multiple contact terminals 4 are juxtaposed on the probe sheet 6, Each contacted material (electrode) arranged on the semiconductor wafer 1 by following a parallel mechanism so as to follow the surface of a group (whole) of a large number of electrodes 3 arranged on the semiconductor element by a compliance mechanism (pressing mechanism). ) 3, and contact by pressing based on a uniform load (about 3 to 150 mN per pin) is performed, and a low resistance (0. It will be connected in 1Ω~0.1Ω).

  Furthermore, the operating current and the operation inspection signal are exchanged between the semiconductor element formed on the semiconductor wafer 1 and the tester 170 via the cable 171, the wiring board 50, and the contact terminal 4, and the semiconductor element Determine whether the operating characteristics are acceptable. Further, the series of inspection operations described above is performed for each of the plurality of semiconductor elements formed on the semiconductor wafer 1 to determine whether or not the operation characteristics are acceptable.

  Finally, a semiconductor device manufacturing method including an inspection process or an inspection method using the semiconductor inspection apparatus will be described with reference to FIG.

  The method of manufacturing a semiconductor device according to the present invention includes a step of forming a circuit on a wafer and forming a semiconductor element, and a semiconductor inspection apparatus according to the present invention collectively collecting electrical characteristics of a plurality of semiconductor elements 2 at a wafer level. The method includes a step of inspecting, a step of dicing the wafer and separating the wafer into semiconductor elements, and a step of sealing the semiconductor elements with a resin or the like.

  Another method for manufacturing a semiconductor device according to the present invention includes a step of forming a circuit on a wafer and forming a semiconductor element, and a semiconductor inspection apparatus according to the present invention collectively collecting electrical characteristics of a plurality of semiconductor elements 2 at a wafer level. And inspecting the wafer and dicing the wafer to separate each semiconductor element.

  In another method of manufacturing a semiconductor device according to the present invention, a circuit is formed on a wafer, a semiconductor element is formed, a step of sealing the wafer with resin or the like, and a step of forming the semiconductor device. The present invention includes a step of collectively inspecting the electrical characteristics of the plurality of semiconductor elements 2 by the semiconductor inspection apparatus according to the present invention.

  In another method of manufacturing a semiconductor device according to the present invention, a circuit is formed on a wafer, a semiconductor element is formed, a step of sealing the wafer with resin or the like, and a step of forming the semiconductor device. The method includes a step of collectively inspecting electrical characteristics of a plurality of semiconductor elements 2 by a semiconductor inspection apparatus according to the present invention, and a step of dicing the wafer and separating the semiconductor elements.

  In the step of inspecting the electrical characteristics of the semiconductor element 2 in the semiconductor device manufacturing method described above, good contact characteristics can be obtained with high positional accuracy by using the probe card disclosed in the present application.

  That is, stable contact characteristics at a low contact pressure can be obtained by inspecting using a contact terminal 4 having a pyramid shape or a truncated pyramid shape formed by plating holes formed by anisotropic etching of a substrate having crystallinity as a mold material. It is possible to perform inspection without damaging the semiconductor element in the lower part. Further, since the plurality of contact terminals 4 are surrounded by the metal film 30a, the contact terminals are not subjected to excessive stress even during the inspection operation, and accurate contact with the electrodes of the semiconductor element 2 can be realized. It is also possible to inspect a plurality of semiconductor elements 2 at once.

  Furthermore, since the indentation to the electrode of the semiconductor element 2 is small and becomes a point (a point having a hole in a pyramid shape or a truncated pyramid shape), a flat region having no indentation remains on the electrode surface. As shown in FIG. 12, it is possible to cope with a plurality of inspections by contact.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiment. However, the present invention is not limited to the above embodiment, and various modifications can be made without departing from the scope of the invention. Not too long.

(A) is a perspective view which shows the wafer which is a to-be-contacted object with which the semiconductor element (chip) was arranged, (b) is a perspective view which shows a semiconductor element (chip). (A) is sectional drawing which shows the principal part of the 1st Example of the probe card based on this invention. (B) is the perspective view which decomposed | disassembled and illustrated the main components of FIG. (A) is sectional drawing which shows the principal part of the 2nd Example of the probe card based on this invention. (B) is the perspective view which decomposed | disassembled and illustrated the main components of FIG. (A)-(h) shows the manufacturing process which forms the probe sheet part in the probe card based on this invention in order of a process. (A)-(e) shows the other manufacturing process which forms the probe sheet in the probe card based on this invention in process order. (A)-(g) shows the other manufacturing process which forms the probe sheet in the probe card based on this invention in process order. (A)-(c) shows the other manufacturing process which forms the probe sheet in the probe card based on this invention in order of a process, (d1) and (e1) are the probe cards based on this invention, respectively. FIG. 2 is a partial schematic cross-sectional view of a region in which the contact terminal portion 8 of the probe sheet is formed in (d2) is a portion of the region in which the contact terminal portion 8 of (d1) is formed, (d1) (E2) is a plan view of a part of the region where the contact terminal portion 8 of (e1) is formed as seen from the bottom surface of (e1). (A)-(d) shows the other manufacturing process which forms the probe sheet in the probe card based on this invention in process order. FIG. 9 is a schematic sectional view of a probe sheet on which a ground layer is formed in the probe card according to the present invention. FIG. 10 shows a schematic cross-sectional view of another probe sheet on which a ground layer is formed in the probe card according to the present invention. It is a figure showing the whole schematic composition showing one embodiment of the inspection system concerning the present invention. It is process drawing which shows one Example of the test | inspection process of a semiconductor device. It is the schematic which shows the assembly method of the probe card based on this invention. (A) is sectional drawing which shows the principal part of one Example of the probe card based on this invention. (B) is the plane schematic which expanded and illustrated the wiring of the components mounting part of FIG. 2 shows an example of a peripheral electrode pattern on the surface of a multilayer wiring board and a wiring pattern of a probe sheet according to the present invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Wafer, 2 ... Semiconductor element (chip), 3 ... Electrode (contact material), 4 ... Contact terminal, 4b ... Connection electrode part, 5 ... Peripheral electrode, 6 ... Probe sheet, 7 ... Support member, 8 ... Contact Terminal part, 8a ... Nickel, 8b ... Rhodium, 8c ... Nickel, 9 ... Peripheral electrode fixing plate, 9e ... Knock pin hole, 12 ... Spring probe, Projection part 12a, 12b ... Spring, 13 ... Spring plunger, 14 ... Holding pin 15 ... leaf spring, 20 ... lead wire, 21 ... frame, 22 ... push piece, 22a ... conical groove, 23 ... cushioning material, 24 ... intermediate plate, 25 ... parallel adjustment screw, 30 ... metal film, 30a ... metal 30b ... Metal film, 30d ... Metal film, 30e ... Knock pin hole, 30f ... Screw insertion hole, 31 ... Buffer material, 32 ... Peripheral pressing plate, 32e ... Knock pin hole, 33 ... Bottom Pressed Plate, 33e ... hole for knock pin, 34 ... knock pin, 50 ... multilayer wiring board, 50a ... electrode, 50b ... internal wiring, 50c ... connection terminal, 50d ... through-hole via, 50e ... hole for knock pin, 60 ... photoresist, 60a ... Photoresist, 61 ... selective plating film, 62 ... polyimide film, 62a ... polyimide film, 63 ... aluminum mask, 63a ... aluminum mask, 64 ... chromium film, 65 ... photoresist, 70 ... ground layer, 71 ... power supply layer, 72 ... mounted Parts, 72a ... Hole for forming vias, 72b ... conductive material, 80 ... silicon wafer, 80a ... etching hole, 81 silicon dioxide film, 82 ... silicon dioxide film, 83 ... conductive coating, 84 ... polyimide film, 84b ... polyimide film 86 ... Conductive coating, 87 ... Photoresist mask, 88 ... Wiring material, 89 ... Deposition layer, 91 ... Photoresist mask, 95 ... Process ring, 96 ... Adhesive, 96b ... Adhesive, 97 ... Protective film, 98 ... Protective film, 100 ... Protection jig for silicon etching, 100a ... Fixing jig, 100b ... Lid, 100c ... O-ring, 100d ... intermediate fixing plate, 105 ... probe card, 120 ... probe card, 140 ... temperature control system, 141 ... heater, 150 ... drive control system, 151 ... operating unit, 160 ... sample support system , 162 ... Sample stage, 164 ... Elevating shaft, 165 ... Elevating drive unit, 166 ... Housing, 167 ... XY stage, 170 ... Tester, 171 ... Cable, 172 ... Cable

Claims (21)

A plurality of contact terminals that are in contact with the electrodes provided on the object to be inspected, a wiring drawn from each of the contact terminals, and a plurality of peripherals that are electrically connected to the wiring and connected to the electrodes of the multilayer wiring board A probe sheet having electrodes,
The contact sheet and the peripheral electrode have a pyramid shape or a truncated pyramid shape. A plurality of contact terminals that are in contact with the electrodes provided on the object to be inspected, a wiring drawn from each of the contact terminals, and a plurality of peripherals that are electrically connected to the wiring and connected to the electrodes of the multilayer wiring board A probe sheet having electrodes,
A probe sheet comprising: a first metal film formed so as to surround the plurality of contact terminals; and a second metal film formed so as to surround the first metal film. A plurality of contact terminals that are in contact with the electrodes provided on the object to be inspected, a wiring drawn from each of the contact terminals, and a plurality of peripherals that are electrically connected to the wiring and connected to the electrodes of the multilayer wiring board A probe sheet having electrodes,
The contact terminal and the peripheral electrode have a pyramid shape or a truncated pyramid shape,
A first metal film formed so as to surround the plurality of contact terminals and a second metal formed so as to surround the first metal film between the plurality of contact terminals and the plurality of peripheral electrodes. A probe sheet comprising: a metal film. The probe sheet according to claim 2 or 3,
The probe sheet, wherein the outer periphery of the first metal film is formed in a circular shape. The probe sheet according to claim 2 or 3,
The region between the first metal film and the second metal film of the probe sheet is more flexible than the region where the first metal film or the second metal film of the probe sheet is formed. A probe sheet characterized by that. The probe sheet according to claim 2 or 3,
The probe sheet further includes a third metal film formed so as to surround the plurality of peripheral electrodes, and the third metal film is provided with positioning holes. The probe sheet according to any one of claims 1 to 6,
The contact sheet and the peripheral electrode are formed by plating holes formed by anisotropic etching of a substrate having crystallinity as a mold material. The probe sheet according to claim 7,
The probe sheet, wherein the peripheral electrodes are arranged in a lattice shape. The probe sheet according to any one of claims 1 to 8,
Furthermore, it has a ground layer and a power supply layer electrically connected to the wiring,
A probe sheet, wherein a wiring connected to the ground layer or the power supply layer is formed wider than a wiring connected to neither the ground layer nor the power supply layer. A probe card having a multi-layer wiring board having a plurality of contact terminals in contact with electrodes provided on an object to be inspected, wirings drawn from each of the contact terminals, and electrodes electrically connected to the wirings ,
The probe card, wherein the electrode of the multilayer wiring board and the wiring are electrically connected via a peripheral electrode having a pyramid shape or a truncated pyramid shape. A multilayer wiring board electrically connected to a tester for inspecting the electrical characteristics of the inspected object;
A probe sheet having a plurality of peripheral electrodes connected to the electrodes of the multilayer wiring board and a plurality of contact terminals in contact with the electrodes provided on the object to be inspected;
A probe card having means for applying a pressing force to a region where the plurality of contact terminals of the probe sheet are formed,
The probe sheet further includes a first metal film formed so as to surround the plurality of contact terminals, and a second metal film formed so as to surround the first metal film,
The means for applying the pressing force can tilt the region where the first metal film is formed and the region where the plurality of contact terminals are formed with respect to the region where the second metal film is formed. The probe card is arranged as described above. A multilayer wiring board electrically connected to a tester for inspecting the electrical characteristics of the inspected object;
A probe sheet having a plurality of peripheral electrodes connected to the electrodes of the multilayer wiring board and a plurality of contact terminals in contact with the electrodes provided on the object to be inspected;
A probe card having means for applying a pressing force to a region where the plurality of contact terminals of the probe sheet are formed,
The contact terminal and the peripheral electrode have a pyramid shape or a truncated pyramid shape,
The probe sheet further includes a first metal film formed so as to surround the plurality of contact terminals, and a second metal film formed so as to surround the first metal film,
The means for applying the pressing force can tilt the region where the first metal film is formed and the region where the plurality of contact terminals are formed with respect to the region where the second metal film is formed. The probe card is arranged as described above. The probe card according to claim 11 or 12,
The region between the first metal film and the second metal film is more flexible than the region where the first metal film or the second metal film is formed on the probe sheet. Featured probe card. The probe card according to claim 11 or 12,
The probe sheet further includes a third metal film formed so as to surround the plurality of peripheral electrodes and provided with positioning holes,
The multilayer wiring board further has a positioning hole,
The plurality of peripheral electrodes and the electrodes of the multilayer wiring board are connected by inserting positioning holes provided in the third metal film and knock pins passing through the positioning holes provided in the multilayer wiring board. A probe card characterized by being aligned with each other. The probe card according to claim 14, wherein
The probe card, wherein the plurality of peripheral electrodes and the electrodes of the multilayer wiring board are arranged in a lattice pattern. The probe card according to any one of claims 10 to 15,
The contact card and the peripheral electrode are formed by plating holes formed by anisotropic etching of a substrate having crystallinity as a mold material. A sample stage on which the object to be inspected is placed;
A probe card that has a plurality of contact terminals that come into contact with electrodes provided on the object to be inspected, and is electrically connected to a tester that inspects the electrical characteristics of the object to be inspected;
A semiconductor inspection apparatus comprising:
17. The semiconductor inspection apparatus according to claim 10, wherein the probe card is any one of claims 10 to 16. A method of manufacturing a semiconductor device, comprising: forming a circuit on a wafer to form a semiconductor element; inspecting electrical characteristics of the semiconductor element; and dicing the wafer to separate the semiconductor element. Because
In the step of inspecting the electrical characteristics of the semiconductor element,
A plurality of contact terminals in contact with the electrodes of the semiconductor element; a first metal film formed so as to surround the plurality of contact terminals; and a second metal formed so as to surround the first metal film. Using a probe sheet having a membrane,
The plurality of contact terminals are brought into contact with electrodes provided on the semiconductor element while applying a pressing force to the region where the first metal film is formed and the region where the plurality of contact terminals are formed on the probe sheet. And manufacturing the semiconductor device. A method of manufacturing a semiconductor device, comprising: forming a circuit on a wafer to form a semiconductor element; inspecting electrical characteristics of the semiconductor element; and dicing the wafer to separate the semiconductor element. Because
In the step of inspecting the electrical characteristics of the semiconductor element,
A plurality of contact terminals that contact the electrodes of the semiconductor element, a first metal film formed so as to surround the plurality of contact terminals, and a second metal film formed so as to surround the first metal film A probe sheet having
Means for applying a pressing force to the region where the first metal film of the probe sheet is formed and the region where the plurality of contact terminals are formed;
Using a probe card with
A method for manufacturing a semiconductor device, comprising: inspecting the plurality of contact terminals in contact with electrodes provided on the semiconductor element. A method of manufacturing a semiconductor device according to claim 18 or 19,
The method for manufacturing a semiconductor device, wherein the plurality of contact terminals have a pyramid shape or a truncated pyramid shape. A method of manufacturing a semiconductor device according to claim 20,
The method of manufacturing a semiconductor device, wherein the plurality of contact terminals are formed by plating holes formed by anisotropic etching of a substrate having crystallinity as a mold material.

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