KR20100027736A - Method for bonding probe - Google Patents

Abstract

PURPOSE: A method for bonding a probe is provided to bond the probe on a substrate without the damage of the probe and the substrate using a laser for irradiation with a wavelength between 400nm to 700nm. CONSTITUTION: A substrate including a circuit pattern is prepares(S110). A probe is located on the circuit pattern(S120). Laser is radiated between the circuit pattern and the probe and bonds the probe on the circuit pattern(S130). The wavelength of the laser ranges between 400nm to 700nm. At least one of the circuit pattern and the probe includes gold.

Description

Probe bonding method {METHOD FOR BONDING PROBE}

The present invention relates to a probe bonding method, and more particularly, to a probe bonding method for bonding a probe to a substrate.

In general, semiconductor devices have a fabrication process of forming contact pads for circuit patterns and inspections on a wafer, and an assembly process of assembling wafers having circuit patterns and contact pads into respective semiconductor chips. It is manufactured through.

An inspection process is performed between the fabrication process and the assembly process to inspect the electrical characteristics of the wafer by applying an electrical signal to the contact pads formed on the wafer. This inspection process is performed to inspect a defect of a wafer and to remove a portion of a wafer in which a defect occurs during an assembly process.

In the inspection process, inspection equipment called a tester for applying an electrical signal to a wafer and probe equipment for performing an interface function between the wafer and the tester are mainly used. Among them, the probe card includes a printed circuit board that receives an electrical signal applied from a tester and a plurality of probes in contact with contact pads formed on the wafer.

The plurality of probes are bonded to the printed circuit board using a probe bonding process and connected to the printed circuit board. Bonding between the printed circuit board and the probe is performed using an adhesive member such as lead (Pb) or a bonding tool such as a laser.

In recent years, as the demand for high integrated chips increases, circuit patterns formed on the wafer by the fabrication process and contact pads connected with the circuit patterns are highly integrated. That is, the spacing between neighboring contact pads is very narrow, and the size of the contact pad itself is also finely formed. As a result, the circuit pattern formed on the printed circuit board of the probe card used in the inspection process should have a very small gap between adjacent circuit patterns corresponding to the contact pads of the wafer, and at the same time, the circuit pattern itself should be finely formed. Probes in contact with the contact pads of the wafer have to be formed with a very small gap between neighboring probes corresponding to the contact pads, and at the same time, the size of the probe itself must be minute. As described above, since the circuit pattern and the probe of the printed circuit board must be finely formed, bonding between the circuit pattern and the probe is performed by a bonding tool such as a laser, by using an adhesive member such as lead (Pb). More preferred.

On the other hand, the laser used for bonding between the circuit pattern and the probe mainly uses a laser having a wavelength in the ultraviolet or infrared region.

However, since the circuit pattern and the probe are made of a metal material such as gold (Au) having high electrical conductivity, when the wavelength of the laser is in the ultraviolet region, the circuit pattern or the probe during the bonding process using the laser due to the high energy of the laser itself. Could be damaged by the laser. In addition, when the wavelength of the laser is in the infrared region, there is a problem that the bonding between the circuit pattern and the probe is not smoothly performed by the probe or the circuit pattern reflecting the laser.

One embodiment of the present invention is to solve the above-described problems, an object of the present invention is to provide a probe bonding method that can bond a probe to a substrate without damaging the probe and the substrate when bonding the probe to the substrate.

As a technical means for achieving the above technical problem, the first aspect of the present invention is a method of bonding a probe to a substrate, (a) providing a substrate having a circuit pattern, (b) on the circuit pattern Positioning a probe and (c) irradiating a laser having a wavelength between 400 nm and 700 nm between the circuit pattern and the probe to bond the probe to the circuit pattern.

At least one of the circuit pattern and the probe may include gold (Au).

In addition, a second aspect of the present invention provides a method of bonding a probe to a substrate, the method comprising: (a) providing a substrate on which a circuit pattern is formed, (b) placing an interconnect element on the circuit pattern, (c Irradiating a laser having a wavelength between 400 nm and 700 nm between the circuit pattern and the interconnect element to bond the interconnect element to the circuit pattern, (d) positioning a probe on the interconnect element. And (e) irradiating a laser having a wavelength between 400 nm and 700 nm between the interconnect element and the probe to bond the probe to the interconnect element.

At least one of the circuit pattern, the interconnection element and the probe may comprise gold.

According to one of the problem solving means of the present invention described above, there is an effect that can be bonded to the substrate without damaging the probe and the substrate by using a laser having a wavelength between 400nm to 700nm.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. In the drawings, parts irrelevant to the description are omitted in order to clearly describe the present invention, and like reference numerals designate like parts throughout the specification.

Throughout the specification, when a part is located "on" with another part, this includes not only when a part is in contact with another part, but also when there is another part between the two parts. In addition, when a part is said to "include" a certain component, which means that it may further include other components, except to exclude other components unless otherwise stated.

Hereinafter, a probe bonding method according to a first embodiment of the present invention will be described with reference to FIGS. 1 to 3.

1 is a flowchart illustrating a procedure of a probe bonding method according to a first embodiment of the present invention, and FIGS. 2 and 3 are cross-sectional views illustrating a probe bonding method according to a first embodiment of the present invention.

First, as shown in FIGS. 1 and 2, the substrate 100 on which the circuit pattern 110 is formed is provided (S110).

Specifically, the circuit pattern 110 is formed on an insulating substrate made of an insulating material such as silicon (Si) by using a photolithography process or the like, and forms a circuit pattern 110 made of a conductive material including gold (Au). ) Is provided with a substrate (100).

Next, as shown in FIG. 3, the probe 200 is positioned on the circuit pattern 110 (S120).

Specifically, the probe 200 including a conductive material such as gold is aligned on the circuit pattern 110, and the probe 200 is disposed on the circuit pattern 110 so that the circuit pattern 110 and the probe 200 contact each other. Locate it. When the probe 200 is positioned on the circuit pattern 110, the conductive material such as gold included in the circuit pattern 110 and the conductive material such as gold included in the probe 200 may face each other and contact each other. The probe 200 is manufactured using MEMS (Micro Electro Mechanical System) technology such as a photolithography process, and the inside of the probe 200 may be made of a conductive material having elasticity such as nickel (Ni), The outside of the probe 200 exposed and in contact with the circuit pattern 110 may be made of a highly conductive material such as gold.

Next, the probe 200 is bonded to the circuit pattern 110 by using a laser (S130).

Specifically, the probe 200 is bonded to the circuit pattern 110 by irradiating a laser having a wavelength of 400 nm to 700 nm between the circuit pattern 110 and the probe 200 by using the laser device 10.

When irradiating a laser having a wavelength of 400 nm to 700 nm between the circuit pattern 110 and the probe 200 in which conductive materials such as gold contact each other, the circuit pattern 110 and the probe 200 corresponding to the portion to which the laser is irradiated ) Will stably absorb the laser. In the circuit pattern 110 and the probe 200 corresponding to the portion absorbed by the laser by the absorption of the irradiated laser, the enthalpy and entropy of the molecules constituting each of them are rapidly increased so that the circuit pattern 110 is increased. ) And Gibbs Free Energy of the probe 200 are rapidly increased. As the Gibbs free energy of the circuit pattern 110 and the probe 200 rises sharply, the molecules constituting each of the molecules move actively and change to a stable state, whereby the circuit pattern corresponding to the portion to which the laser is irradiated ( 110 and the probe 200 are bonded to each other as a whole. That is, the circuit pattern 110 and the probe 200 are stably bonded by a laser having a wavelength of 400 nm to 700 nm.

In another embodiment, between the circuit pattern 110 and the probe 200, a conductive paste made of a conductive material such as gold is placed to place the circuit pattern 110 and the probe using a laser having a wavelength between 400 nm and 700 nm. Bonding between 200 may be possible.

On the other hand, when the laser having a wavelength in the ultraviolet region, which is a laser having a wavelength of less than 400nm between the circuit pattern 110 and the probe 200, the laser having a wavelength of less than 400nm has a high energy, so According to the conductive material included in the pattern 110 and the probe 200, minute adjustment of the laser irradiation angle and wavelength is essential. If the above conditions are not met, the circuit pattern 110 or the probe There is a problem that the 200 is damaged by the laser.

In addition, when irradiating a laser having a wavelength in the infrared region, which is a laser having a wavelength greater than 700 nm, between the circuit pattern 110 and the probe 200, the conductive material included in the circuit pattern 110 and the probe 200. Accordingly, the circuit pattern 110 and the probe 200 may have a greater amount of reflection than an amount hopping a laser having a wavelength greater than 700 nm. In particular, when the circuit pattern 110 and the probe 200 include gold having high electrical conductivity, when the laser having a wavelength greater than 700 nm is irradiated between the circuit pattern 110 and the probe 200, the circuit pattern 110 may be used. And more lasers reflected by the circuit pattern 110 and the probe 200 than the lasers absorbed by the probe 200. Due to the laser reflection by the circuit pattern 110 and the probe 200, only the outer surface of the circuit pattern 110 and the probe 200 corresponding to the portion to which the laser is irradiated is bonded to each other, and the circuit pattern 110 And the inside of the probe 200 are not bonded. That is, the circuit pattern 110 and the probe 200 are not stably bonded by the laser having a wavelength greater than 700 nm.

As described above, the probe 200 is stably bonded to the circuit pattern 110 by irradiating a laser having a wavelength between 400 nm and 700 nm to a portion where the probe 200 and the circuit pattern 110 contact each other. The probe 200 may be stably bonded to the substrate 100 without damaging the 200 and the substrate 100.

Hereinafter, a probe bonding method according to a second exemplary embodiment of the present invention will be described with reference to FIGS. 4 to 6. Hereinafter, only the characteristic parts distinguished from the first embodiment will be described and described, and the description thereof will be omitted according to the first embodiment. In addition, in the second embodiment of the present invention, for the convenience of description, the same components will be described using the same reference numerals as in the first embodiment.

4 is a flowchart illustrating a procedure of a probe bonding method according to a second embodiment of the present invention, and FIGS. 5 and 6 are cross-sectional views illustrating a probe bonding method according to a second embodiment of the present invention.

First, as shown in FIGS. 4 and 5, the substrate 100 on which the circuit pattern 110 is formed is provided (S210).

Next, the interconnection element 300 is positioned on the circuit pattern 110 (S220).

Specifically, the interconnection element 300 including a conductive material such as gold is aligned on the circuit pattern 110, and the circuit element 110 and the interconnection element 300 are in contact with each other. Position the interconnect element 300. When the interconnection element 300 is positioned on the circuit pattern 110, the conductive material such as gold included in the circuit pattern 110 and the conductive material such as gold included in the interconnection element 300 face each other to contact each other. do. Interconnect element 300 may be fabricated using MEMS techniques, such as a photolithography process. The interior of the interconnection element 300 may be made of a conductive material having elasticity such as nickel (Ni), and the exterior of the interconnection element 300 exposed to the outside and in contact with the circuit pattern 110 may be made of gold or the like. It may be made of a highly conductive material.

Next, the interconnect element 300 is bonded to the circuit pattern 110 by using a laser (S230).

Specifically, the laser device 10 is used to irradiate a laser having a wavelength of 400 nm to 700 nm between the circuit pattern 110 and the interconnect element 300 to bond the interconnect element 300 to the circuit pattern 110.

When irradiating a laser having a wavelength of 400 nm to 700 nm between the circuit pattern 110 and the interconnection element 300 in which conductive materials such as gold are in contact with each other, the circuit pattern 110 corresponding to the portion to which the laser is irradiated The connection element 300 will stably absorb the laser. In the circuit pattern 110 and the interconnection element 300 corresponding to the portion absorbed by the laser by the absorption of the irradiated laser, the enthalpy and entropy of the molecules constituting each of them are rapidly increased so that the circuit pattern 110 and the interconnection are increased. The Gibbs free energy of element 300 will rise rapidly. As the Gibbs free energy of the circuit pattern 110 and the interconnection element 300 rises sharply, the molecules constituting each of the molecules move actively with each other and change to a stable state, so that the circuit corresponding to the portion irradiated with the laser is irradiated. The pattern 110 and the interconnection element 300 are bonded to each other as a whole. In other words, the laser having a wavelength of 400 nm to 700 nm causes the circuit pattern 110 and the interconnection element 300 to be stably bonded.

In another embodiment, a conductive paste made of a conductive material, such as gold, is placed between circuit pattern 110 and interconnect element 300 to interconnect with circuit pattern 110 using a laser having a wavelength between 400 nm and 700 nm. Bonding between the connection elements 300 can be made.

Next, as shown in FIG. 6, the probe 200 is positioned on the interconnection element 300 (S240).

Specifically, the probe 200 including a conductive material such as gold is aligned on the interconnect element 300, and the probe on the interconnect element 300 is in contact with the interconnect element 300 and the probe 200. Place 200. When the probe 200 is positioned on the interconnection element 300, a conductive material such as gold included in the interconnection element 300 and a conductive material such as gold included in the probe 200 face each other and contact each other.

Next, the probe 200 is bonded to the interconnection element 300 using a laser (S250).

Specifically, the laser device 10 is used to irradiate a laser having a wavelength of 400 nm to 700 nm between the interconnect element 300 and the probe 200 to bond the probe 200 to the interconnect element 300.

When irradiating a laser having a wavelength of 400 nm to 700 nm between the interconnection element 300 and the probe 200 in which conductive materials such as gold contact each other, the interconnection element 300 and the probe corresponding to the portion to which the laser is irradiated 200 will stably absorb the laser. The interconnection element 300 and the probe 200 corresponding to the portion absorbed by the laser by the absorption of the irradiated laser are rapidly enthalpy and entropy of the molecules constituting each of them, the interconnection element 300 and the probe The Gibbs free energy of 200 rises sharply. As the Gibbs free energy of the interconnect element 300 and the probe 200 rises sharply, the molecules constituting each of them move actively with each other and each changes to a stable state, thereby interconnecting the portion irradiated with the laser. The element 300 and the probe 200 will adhere to each other as a whole. That is, the bonding between the interconnect element 300 and the probe 200 is stably bonded by a laser having a wavelength of 400 nm to 700 nm.

In another embodiment, a conductive paste made of a conductive material, such as gold, is placed between the interconnect element 300 and the probe 200 to utilize the laser having a wavelength between 400 nm and 700 nm to connect the interconnect element 300 and the probe ( 200).

As described above, the laser having a wavelength between 400 nm and 700 nm is irradiated to the portion where the circuit pattern 110 and the interconnect element 300 contact each other to stably bond the interconnect element 300 to the circuit pattern 110. The substrate 100 by stably bonding the probe 200 to the interconnect element 300 by irradiating a laser having a wavelength between 400 nm and 700 nm to a portion where the interconnect element 300 and the probe 200 are in contact with each other. ), The probe 200 can be stably bonded to the substrate 100 without damaging the interconnect element 300 and the probe 200.

In the probe bonding method according to the second exemplary embodiment of the present invention, the probe element may be formed by a plurality of inspection processes by interposing the interconnection element 300 between the circuit pattern 110 and the probe 200 formed on the substrate 100. When the 200 is damaged, since the probe 200 is separated from the interconnection element 300, the damage of the circuit pattern 110 formed on the substrate 100 may not occur by the separation process of the probe 200. In particular, when the substrate 100 is an expensive substrate 100 formed of a multi-layer ceramic substrate (MLC), a circuit pattern that may occur due to a process of separating the probe 200 from the substrate 100 ( Maintenance cost is minimized because the replacement of the substrate 100 is not performed due to the damage of 110. That is, in the probe bonding method according to the second embodiment of the present invention, since the probe 200 may be separated from the substrate 100 so that the substrate 100 is not damaged, maintenance costs are minimized.

The foregoing description of the present invention is intended for illustration, and it will be understood by those skilled in the art that the present invention may be easily modified in other specific forms without changing the technical spirit or essential features of the present invention. will be. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive. For example, each component described as a single type may be implemented in a distributed manner, and similarly, components described as distributed may be implemented in a combined form.

The scope of the present invention is shown by the following claims rather than the above description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included in the scope of the present invention. do.

1 is a flowchart illustrating a procedure of a probe bonding method according to a first embodiment of the present invention.

2 and 3 are cross-sectional views for explaining a probe bonding method according to a first embodiment of the present invention,

4 is a flowchart illustrating a procedure of a probe bonding method according to a second embodiment of the present invention.

5 and 6 are cross-sectional views illustrating a probe bonding method according to a second exemplary embodiment of the present invention.

Claims (4)

In the method of bonding the probe to the substrate, (a) preparing a substrate having a circuit pattern formed thereon; (b) positioning a probe on the circuit pattern; and (c) bonding the probe to the circuit pattern by irradiating a laser having a wavelength between 400 nm and 700 nm between the circuit pattern and the probe Probe bonding method comprising a. The method of claim 1, At least one of the circuit pattern and the probe comprises gold (Au). In the method of bonding the probe to the substrate, (a) preparing a substrate having a circuit pattern formed thereon; (b) positioning an interconnect element on the circuit pattern, (c) bonding the interconnect element to the circuit pattern by irradiating a laser having a wavelength between 400 nm and 700 nm between the circuit pattern and the interconnect element, (d) positioning a probe on the interconnect element and (e) irradiating a laser having a wavelength between 400 nm and 700 nm between the interconnect element and the probe to bond the probe to the interconnect element Probe bonding method comprising a. The method of claim 3, wherein At least one of the circuit pattern, the interconnect element and the probe comprises gold.

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