KR100972995B1 - Method for bonding probe - Google Patents

Method for bonding probe Download PDF

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Publication number
KR100972995B1
KR100972995B1 KR1020080077733A KR20080077733A KR100972995B1 KR 100972995 B1 KR100972995 B1 KR 100972995B1 KR 1020080077733 A KR1020080077733 A KR 1020080077733A KR 20080077733 A KR20080077733 A KR 20080077733A KR 100972995 B1 KR100972995 B1 KR 100972995B1
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South Korea
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probe
substrate
alignment
pattern
probes
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KR1020080077733A
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Korean (ko)
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KR20100018960A (en
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유정희
한정섭
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윌테크놀러지(주)
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Abstract

A method of bonding a probe to a substrate may include preparing a substrate including a circuit pattern, forming an alignment pattern on the circuit pattern, providing a probe including an alignment portion, and attaching the probe to the substrate. Aligning on a circuit pattern and bonding the probe to the substrate.

Probe, Board, Bonding

Description

Probe bonding method {METHOD FOR BONDING PROBE}

The present invention relates to a probe bonding method, and more particularly, to a probe bonding method for bonding a probe to a substrate.

In general, semiconductor devices have a fabrication process of forming contact pads for circuit patterns and inspections on a wafer, and an assembly process of assembling wafers having circuit patterns and contact pads into respective semiconductor chips. It is manufactured through.

An inspection process is performed between the fabrication process and the assembly process to inspect the electrical characteristics of the wafer by applying an electrical signal to the contact pads formed on the wafer. This inspection process is performed to inspect a defect of a wafer and to remove a portion of a wafer in which a defect occurs during an assembly process.

In the inspection process, inspection equipment called a tester for applying an electrical signal to a wafer and probe equipment for performing an interface function between the wafer and the tester are mainly used. Among them, the probe card includes a printed circuit board that receives an electrical signal applied from a tester and a plurality of probes in contact with contact pads formed on the wafer.

In recent years, as the demand for high integrated chips increases, circuit patterns formed on the wafer by the fabrication process and contact pads connected with the circuit patterns are highly integrated. That is, the spacing between neighboring contact pads is very narrow, and the size of the contact pad itself is also finely formed. As a result, since the probe of the probe card used in the inspection process must be in contact with the contact pad, the distance between neighboring probes corresponding to the contact pad must be formed very narrowly, and the size of the probe itself must also be finely formed.

Hereinafter, a method of manufacturing a conventional probe card will be described with reference to FIGS. 1 to 3.

1 to 3 are diagrams for explaining a conventional method of manufacturing a probe card.

First, as shown in FIG. 1, an opening 11 is formed in a sacrificial substrate 10 using photolithography technology, and a probe 20 is formed by filling a conductive material in the opening 11.

Next, as shown in FIG. 2, the probe card is completed by bonding each probe 20 to the circuit pattern 31 formed on the substrate 30.

Since the conventional method of manufacturing a probe card as described above bonds each probe 20 to a circuit pattern 31 formed on the substrate 30, each probe 20 is accurately placed on the circuit pattern 31. Since the alignment is difficult, the time for bonding each probe 20 to the substrate 30 is increased.

In addition, in the conventional method of manufacturing a probe card, when the bonding state of the probe 20 to the substrate 30 is poor or the surface flatness of the substrate 30 is poor, an error occurs between neighboring probes 20. Therefore, alignment between neighboring probes 20 must be performed. When performing alignment between neighboring probes 20, the outermost ends of neighboring probes 20 are adjusted so that the outermost ends of neighboring probes 20 in contact with contact pads formed on the wafer are located on the same parallel line. As a result, alignment between neighboring probes 20 is completed. As described above, in the conventional method of manufacturing a probe card, it is difficult to align the probe 20 with respect to the substrate 30, and after bonding the probe 20 to the substrate 30, additional alignment between neighboring probes 20 is performed. Since it should be, there was a problem that the manufacturing period and manufacturing cost increases.

Hereinafter, another conventional method of manufacturing a probe card for solving the above problems will be described.

First, as shown in FIG. 1, an opening 11 is formed in a sacrificial substrate 10 using photolithography technology, and a probe 20 is formed by filling a conductive material in the opening 11.

Next, as shown in FIG. 3, the probe 20 formed on the sacrificial substrate 10 is bonded to the circuit pattern 31 formed on the substrate 30.

Next, as shown in FIG. 2, the probe card is completed by separating the sacrificial substrate 10 from the probe 20.

As described above, another conventional method of manufacturing a probe card uses a photolithography technique used to form a pattern of a semiconductor, so that the size of the probe 20 itself can be finely formed, and the interval between neighboring probes 20 can be achieved. It can also be formed in the printed circuit board 30 very narrowly.

However, according to another conventional method for manufacturing a probe card, the plurality of probes 20 are collectively bonded to the circuit pattern 31 formed on the substrate 30, so that some probes 20 or the entire probes 20 Failure to align correctly on the circuit pattern 31 may occur. In this case, after bonding the plurality of probes 20 to the substrate 30, the alignment state of the plurality of probes 20 is inspected by an additional process to remove the probes 20 when the alignment state is poor. The problem arises in that the alignment must be correctly bonded again. This is a factor that increases the manufacturing period and manufacturing cost.

In addition, according to another conventional method of manufacturing a probe card, when the surface flatness of the substrate 30 is poor, an error occurs in the alignment between neighboring probes 20 due to the poor surface flatness of the substrate 30. In this case, alignment between neighboring probes 20 must be further performed to adjust the outermost ends of neighboring probes 20 so that the outermost ends of neighboring probes 20 are on the same parallel line. That is, another method for manufacturing a probe card according to the conventional method of manufacturing a probe card described above, if the surface flatness of the substrate 30 is poor, it is necessary to additionally perform alignment between neighboring probes 20. There is a problem. This is a factor that increases the manufacturing period and manufacturing cost.

In addition, another conventional method of manufacturing a probe card is that when the shape of the substrate 30 or the circuit pattern 31 formed on the substrate 30 is changed, the substrate 30 or the circuit pattern 31 formed on the substrate 30 It is necessary to change the shape of the sacrificial substrate 10 in accordance with the shape. That is, since the probe 20 may be bonded to only one type of substrate 30 and a circuit pattern 31 that are determined using one sacrificial substrate 10, one sacrificial substrate 10 may be formed of another type. There is a problem that cannot be applied to the substrate and the circuit pattern.

Meanwhile, according to another conventional method of manufacturing a probe card, when bonding the probe 20 to the substrate 30, the surface flatness of the substrate 30 is made constant so that neighboring probes 20 are aligned with each other. Another conventional method of manufacturing a probe card uses a physical process such as a sanding process or a chemical process using a chemical solution, etc. to make the surface flatness of the substrate 30 constant. Treatment to make the surface flatness of the substrate 30 constant, or use the flatness adjusting screw on the substrate 30 to adjust the surface flatness of the substrate 30 to make the surface flatness of the substrate 30 constant. have.

However, according to another conventional method of manufacturing a probe card, as the size of an inspected object such as a wafer increases, the size of the substrate 30 increases to correspond to the inspected object such as a wafer. By treating the surface of the substrate 30, it is difficult to make the surface flatness of the large substrate 30 uniform. If the surface flatness of the substrate 30 is adjusted using the flatness adjusting screw, the flatness adjusting screw may be removed. When adjusting the surface flatness of the substrate 30 by using, there is a problem that it is difficult to make the surface flatness of the substrate 30 constant due to the rumbling of the substrate 30 having a larger size.

One embodiment of the present invention is to solve the above-described problems, when bonding the probe to the substrate, it is possible to perform the alignment of the probe with respect to the substrate and the alignment between neighboring probes, regardless of the surface flatness of the substrate It is an object to provide a probe bonding method.

In addition, an object of the present invention is to provide a probe bonding method capable of bonding probes to various types of substrates and circuit patterns, thereby improving versatility.

Another object of the present invention is to provide a probe bonding method capable of performing alignment between neighboring probes regardless of the size of the substrate.

As a technical means for achieving the above-described technical problem, the first aspect of the present invention is a method for bonding a probe to a substrate, (a) a circuit pattern having a first height from the substrate body portion and the surface of the substrate body portion (B) forming an alignment pattern having a second height higher than the first height from the surface of the substrate main body on the circuit pattern, and (c) corresponding to the alignment pattern Providing a probe including an alignment portion, (d) contacting the alignment portion of the probe with the alignment pattern such that the outermost end of the probe facing the alignment portion is positioned on one parallel line Aligning the pattern on the circuit pattern of the substrate and (e) melting the alignment pattern between the alignment pattern and the circuit pattern and the alignment The adhesion between the pattern and the probe provides a probe bonding method comprising the step of bonding the probes to the substrate.

Step (b) or step (c) may be performed using a photolithography process.

Step (d) may be performed using a robot in which the program related to the alignment is stored.

The step (e) may be performed by increasing the Gibbs free energy of the alignment pattern.

The step (e) may be performed with the alignment pattern facing the ground.

The surface of the substrate main body may be uneven.

In addition, a second aspect of the present invention provides a method of bonding a probe to a substrate, comprising the steps of: (a) providing a substrate comprising a substrate body portion and a plurality of circuit patterns having a first height from a surface of the substrate body portion, (b) forming an alignment pattern having a second height higher than the first height from the surface of the substrate main body on each of the circuit patterns, and (c) a plurality of alignment parts including an alignment part corresponding to the alignment pattern. (D) contacting the alignment portion formed on each of the circuit patterns so that the outermost ends of the plurality of probes facing the alignment portion are aligned on one parallel line; Arranging the plurality of probes on the plurality of circuit patterns of the substrate so as to be located at (e) melting the alignment pattern and the alignment pattern; Bonding the plurality of probes to the substrate by bonding between the circuit patterns and between the alignment pattern and the probe.

One or more of the steps (b), (c), (d) and (e) may be performed using a single process.

Step (b) or step (c) may be performed using a photolithography process.

Step (d) may be performed using a robot in which the program related to the alignment is stored.

The step (e) may be performed by increasing the Gibbs free energy of the alignment pattern.

The step (e) may be performed with the alignment pattern facing the ground.

The surface of the substrate main body may be uneven.

According to one of the above-described problem solving means of the present invention, by bonding the probe to the substrate using an alignment pattern, when bonding the probe to the substrate, the alignment and neighborhood of the probe with respect to the substrate, regardless of the surface flatness of the substrate There is an effect that can perform the alignment between the probes.

In addition, by bonding the probe to the substrate using the alignment pattern, it is possible to bond the probe to various types of substrates and circuit patterns, thereby improving the versatility.

In addition, by bonding the probe to the substrate using an alignment pattern, there is an effect that alignment between neighboring probes may be performed regardless of the size of the substrate.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. In the drawings, parts irrelevant to the description are omitted in order to clearly describe the present invention, and like reference numerals designate like parts throughout the specification.

Throughout the specification, when a part is located "on" with another part, this includes not only when a part is in contact with another part, but also when there is another part between the two parts. In addition, when a part is said to "include" a certain component, which means that it may further include other components, except to exclude other components unless otherwise stated.

Hereinafter, the probe bonding method according to the first embodiment of the present invention will be described with reference to FIGS. 4 to 9.

4 is a flowchart illustrating a procedure of a probe bonding method according to a first embodiment of the present invention, and FIGS. 5 to 9 are cross-sectional views illustrating a probe bonding method according to a first embodiment of the present invention.

First, as shown in FIGS. 4 and 5, the substrate 100 is prepared (S110).

Specifically, the substrate 100 may be formed of a printed circuit board (PCB) or a multi-layer ceramic substrate (MLC) as a space transformer, and the substrate main body 110 and the substrate main body. A circuit pattern 120 having a first height L ′ from the surface of 110. The circuit pattern 120 may be formed on the surface of the substrate main body 110 using a photolithography process. The surface of the substrate main body 110 is irregular and uneven, and the surface of the circuit pattern 120 formed on the surface of the substrate main body 110 is uneven along the surface of the substrate main body 110.

The surface of the substrate 100 provided by the probe bonding method according to the first embodiment of the present invention is a concave-convex shape, but in another embodiment, the surface of the substrate 100 is not limited to the concave-convex shape, the flat form Can be. In addition, the shape of the circuit pattern 120 formed on the surface of the substrate main body 110 is a rectangular shape of irregularities, but in another embodiment, the shape of the circuit pattern 120 is not limited to the rectangular shape of the irregularities and is rectangular or circular. Or it may be formed in other shapes such as complex pattern shape.

Next, as shown in FIG. 6, the alignment pattern 200 is formed (S120).

Specifically, the alignment pattern 200 having a second height L₂ higher than the first height L ′ from the surface of the substrate main body 110 on the circuit pattern 120 formed on the substrate main body 110. To form. The alignment pattern 200 may be formed on the circuit pattern 120 using a photolithography process or the like. The surface of the alignment pattern 200 is bumpy along the surface of the circuit pattern 120.

The alignment pattern 200 formed by the probe bonding method according to the first exemplary embodiment of the present invention has two irregularities formed at an end portion of the circuit pattern 120 in a rectangular shape. The shape of the phosphorus pattern 200 is not limited to a concave-convex quadrangular shape, but may be formed in one or three or more portions at a central portion or a periphery of the circuit pattern 120 in another shape such as a rectangular or circular shape or a complicated pattern shape.

Next, as shown in FIG. 7, a probe 300 is prepared (S130).

In detail, the probe 300 may be manufactured finely using a photolithography process, or the like, or may be manufactured on a sacrificial substrate or by etching the conductive material itself. For example, the probe 300 may be formed in a vertical type or a cantilever type. The probe 300 includes an alignment part 310 formed to correspond to the alignment pattern 200. The alignment unit 310 may be formed in a shape corresponding to the alignment pattern 200, and the shape of the alignment unit 310 may vary according to the shape of the alignment pattern 200.

Next, the probe 300 is aligned on the substrate 100 (S140).

Specifically, the alignment unit 310 on the alignment pattern 200 so that the alignment unit 310 of the probe 300 corresponds to the shape of the alignment pattern 200 formed on the circuit pattern 120 of the substrate 100. Touch to align the probe 300 on the circuit pattern 120. That is, the probe 300 is aligned with respect to the substrate 100 using the alignment pattern 200 and the alignment unit 310. The outermost end 320 of the probe 300, which is in alignment with the probe 300 with respect to the substrate 100 and in contact with the contact pad formed on the object under test, such as a wafer, is positioned on one parallel line 400. That is, the end of the outermost end 320 of the probe 300 is matched with one parallel line 400.

Next, as shown in FIGS. 8 and 9, the alignment pattern 200 is melted to bond the probe 300 to the substrate 100 (S150).

Specifically, as shown in FIG. 8, while the probe 300 is aligned with respect to the substrate 100, the end of the outermost end 320 of the probe 300 is aligned with one parallel line 400. In addition, by applying an energy source such as a laser or heat to the alignment pattern 200 which is in contact with the alignment unit 310 of the probe 300, the Gibbs free energy of the alignment pattern 200 is raised to freeze. The phosphorus pattern 200 is melted. Increasing the Gibbs free energy of the alignment pattern 200, the enthalpy and entropy of the molecules constituting the alignment pattern 200 increases, the alignment pattern 200 changes to an unstable state Done. Therefore, the alignment pattern 200 is spread on the circuit pattern 120 to move to a space between the probe 300 and the circuit pattern 120 in order to change to a stable state. Due to the sudden change of the alignment pattern 200 in the reversible direction due to the increase in the Gibbs free energy, the alignment pattern 200 is hardened and between the alignment pattern 200 and the circuit pattern 120 and the alignment pattern. Between the 200 and the probe 300 is bonded. That is, the circuit pattern 120 and the probe 300 are bonded by the alignment pattern 200, and the probe 300 is bonded to the substrate 100.

Here, the change in the reversible direction means that the substance changes to a stable state.

Alternatively, as shown in FIG. 9, by applying an energy source such as a laser or heat to the alignment pattern 200 with the alignment pattern 200 facing the ground, the Gibbs free energy of the alignment pattern 200 is increased. When the alignment pattern 200 is melted, the alignment pattern 200 is moved between the probe 300 and the circuit pattern 120 by the gravity and in the direction of the ground that surrounds the probe 300. Due to the sudden change in the reversible direction of the alignment pattern 200 due to the increase in the free energy of the cast, the alignment pattern 200 is hardened in the state in which the probe 300 is wrapped, and thus the circuit pattern is formed by the alignment pattern 200. The probe 120 is bonded between the 120 and the probe 300, and the probe 300 is bonded to the substrate 100.

Meanwhile, the probe 300 and the circuit pattern 120 manufactured by using the photolithography process are very fine, and the alignment pattern 200 formed on the circuit pattern 120 and the alignment part 310 formed on the probe 300 are very fine. ) Is also very fine, the substrate 100 by using the alignment pattern 200 and the alignment unit 310 in the state that the end of the outermost end 320 of the probe 300 is aligned with one parallel line 400. And a program for aligning the probe 300 with respect to the substrate 300, and using a robot or the like having a bonding tool such as a laser irradiation device capable of increasing the Gibbs free energy of the alignment pattern 200 on the substrate 100. It is desirable to bond the probe 300.

As described above, the bonding of the probe 300 to the substrate 100 and the alignment of the probe 300 with respect to the substrate 100 and the alignment between neighboring probes 300 are performed.

As described above, the probe bonding method according to the first embodiment of the present invention aligns each probe 300 with respect to the substrate 100 by using the alignment pattern 200 and the alignment unit 310. By melting the alignment pattern 200 in a state where the end of the outermost end 320 of the probe 300 is aligned with the same parallel line 400, the respective probes 300 are bonded to the substrate 100, respectively. The alignment of the probe 300 on the circuit pattern 120 to shorten the time for aligning the probe 300 with respect to the substrate 100, and at the same time the surface flatness of the substrate 100 and the size of the substrate 100. Regardless, since the outermost end 320 of the neighboring probe 300 coincides with one parallel line 400, alignment between neighboring probes 300 is automatically performed, so that an additional alignment process between neighboring probes 300 is required. none. That is, the probe bonding method according to the first embodiment of the present invention shortens the manufacturing period and manufacturing cost.

In addition, since each probe 300 is bonded to the substrate 100, the probe 300 may be bonded to the substrate 100 regardless of the size of the substrate 100. That is, the size of the wafer and the number of contact pads in contact with the probe 300 may be elastically corresponding.

In addition, since the probe 300 is bonded to the circuit pattern 120 using the alignment pattern 200, the probe 300 may be connected to the circuit pattern 120 regardless of the shape of the substrate 100 and the circuit pattern 120. ) Can be bonded. That is, the probe 300 may be bonded to various types of substrates 100 and circuit patterns 120. This improves the versatility of the process of bonding the probe 300 to the substrate 100.

Hereinafter, a probe bonding method according to a second exemplary embodiment of the present invention will be described with reference to FIGS. 10 to 15.

Hereinafter, only the characteristic parts distinguished from the first embodiment will be described and described, and the descriptions thereof will be omitted according to the first embodiment. In addition, in the second embodiment of the present invention, for the convenience of description, the same components will be described using the same reference numerals as in the first embodiment.

10 is a flowchart illustrating a procedure of a probe bonding method according to a second embodiment of the present invention, and FIGS. 11 to 15 are cross-sectional views illustrating a probe bonding method according to a second embodiment of the present invention.

First, as shown in FIGS. 10 and 11, the substrate 100 is prepared (S210).

Specifically, the substrate 100 includes a substrate main body 110 and a plurality of circuit patterns 120 having a first height L ′ from the surface of the substrate main body 110.

The shape of the plurality of circuit patterns 120 formed on the surface of the substrate main body 110 by the probe bonding method according to the second embodiment of the present invention is a rectangular shape of irregularities, but in another embodiment the plurality of circuit patterns 120 ) Is not limited to the rectangular shape of the concave-convex shape and some or more of the plurality of circuit patterns 120 may be formed in other shapes such as rectangular or circular or complex pattern shape.

Next, as shown in FIG. 12, the alignment pattern 200 is formed (S220).

Specifically, the second height L₂ higher than the first height L ′ from the surface of the substrate main body 110 on each circuit pattern 120 among the plurality of circuit patterns 120 formed on the substrate main body 110. To form an alignment pattern 200.

Next, as shown in FIG. 13, a plurality of probes 300 are prepared (S230).

In detail, the plurality of probes 300 may be manufactured at the same time using a single process using a photolithography process or the like. The plurality of probes 300 includes an alignment unit 310 formed to correspond to the alignment pattern 200. The alignment unit 310 may be formed in a shape corresponding to the alignment pattern 200, and the shape of the alignment unit 310 may vary according to the shape of the alignment pattern 200.

Next, the plurality of probes 300 are aligned on the substrate 100 (S240).

Specifically, the alignment pattern such that the alignment unit 310 of the probe 300 corresponds to the shape of the alignment pattern 200 formed on each circuit pattern 120 of the plurality of circuit patterns 120 of the substrate 100. The alignment unit 310 is contacted with the 200 to align the plurality of probes 300 on the plurality of circuit patterns 120 using a single process. That is, the plurality of probes 300 are aligned with respect to the substrate 100 using the alignment pattern 200 and the alignment unit 310. The outermost end 320 of each probe 300 in contact with the contact pad formed on the object under test, such as a wafer, while aligning the plurality of probes 300 with respect to the substrate 100, is positioned on one parallel line 400. Do it. That is, the plurality of probes 300 are aligned on the substrate 100 using one process of matching the ends of the outermost ends 320 of the plurality of probes 300 with one parallel line 400.

Next, as shown in FIGS. 14 and 15, the alignment pattern 200 is melted to bond the plurality of probes 300 to the substrate 100 (S250).

Specifically, as shown in FIG. 14, the ends of the outermost end 320 of the plurality of probes 300 are aligned on one parallel line 400 while aligning the plurality of probes 300 with respect to the substrate 100. In the matched state, an energy source such as a laser or heat is applied to the alignment pattern 200 formed on each circuit pattern 120 which is in contact with the alignment unit 310 of each probe 300 to align the alignment pattern ( By raising the Gibbs free energy of the 200, the alignment pattern 200 is melted so that the alignment pattern 200 spreads on each circuit pattern 120 to bond between each probe 300 and each circuit pattern 120. . As a result, the plurality of probes 300 are bonded to the substrate 100.

Alternatively, as shown in FIG. 15, by raising the Gibbs free energy of the alignment pattern 200 by applying an energy source such as a laser or heat to the alignment pattern 200 with the alignment pattern 200 facing the ground. The plurality of probes 300 are bonded to the substrate 100 by allowing the alignment pattern 200 to surround each probe 300 by gravity.

Bonding of the plurality of probes 300 to the plurality of circuit patterns 120 as described above may be performed using a single process.

Meanwhile, the plurality of probes 300 and the plurality of circuit patterns 120 manufactured using the photolithography process are very fine, and the alignment pattern 200 and the respective probes 300 formed on the circuit patterns 120 are very fine. Since the alignment portion 310 formed in the microstructure is also very fine, each alignment pattern 200 and each alignment portion in the state where the ends of the outermost ends 320 of the plurality of probes 300 coincide with one parallel line 400. A program for aligning the plurality of probes 300 with respect to the substrate 100 using the 310 is stored, and it is possible to increase the Gibbs free energy of the alignment pattern 200 formed on each circuit pattern 120. It is preferable to bond the plurality of probes 300 to the substrate 100 by using a robot having a bonding tool such as a laser irradiation apparatus.

By the method described above, the plurality of probes 300 are aligned with the substrate 100 and the plurality of probes 300 are aligned while bonding the plurality of probes 300 to the substrate 100.

As described above, the probe bonding method according to the second exemplary embodiment of the present invention aligns the plurality of probes 300 with respect to the substrate 100 using the alignment pattern 200 and the alignment unit 310 at a time. By melting the alignment pattern 200 in a state where the ends of the outermost end 320 of the plurality of probes 300 coincide with one parallel line 400, the plurality of probes 300 are bonded to the substrate 100. Time to align the plurality of probes 300 on the circuit pattern 120 to align the plurality of probes 300 with respect to the substrate 100, and at the same time, the surface flatness of the substrate 100 and the surface of the substrate 100 Since the ends of the outermost end 320 of the plurality of probes 300 coincide with one parallel line 400 regardless of the size, alignment between the plurality of probes 300 is automatically performed to align the additional neighboring probes 300. There is no need for this. That is, the probe bonding method according to the second embodiment of the present invention shortens the manufacturing period and manufacturing cost.

The foregoing description of the present invention is intended for illustration, and it will be understood by those skilled in the art that the present invention may be easily modified in other specific forms without changing the technical spirit or essential features of the present invention. will be. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. For example, each component described as a single type may be implemented in a distributed manner, and similarly, components described as distributed may be implemented in a combined form.

The scope of the present invention is shown by the following claims rather than the above description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included in the scope of the present invention. do.

1 to 3 are cross-sectional views for explaining a method of manufacturing a conventional probe card,

4 is a flowchart illustrating a procedure of a probe bonding method according to a first embodiment of the present invention.

5 to 9 are cross-sectional views illustrating a probe bonding method according to a first embodiment of the present invention.

10 is a flowchart illustrating a procedure of a probe bonding method according to a second embodiment of the present invention.

11 to 15 are cross-sectional views illustrating a probe bonding method according to a second embodiment of the present invention.

Claims (13)

In the method of bonding the probe to the substrate, (a) providing a substrate comprising a substrate body portion and a circuit pattern having a first height from a surface of the substrate body portion, (b) forming an alignment pattern having a second height higher than the first height on the circuit pattern from the surface of the substrate body; (c) providing a probe including an alignment part corresponding to the alignment pattern; (d) aligning the probe on the circuit pattern of the substrate such that the alignment portion of the probe is in contact with the alignment pattern such that the outermost end of the probe facing the alignment portion is located on one parallel line. And (e) melting the alignment pattern to bond the probe to the substrate by adhering between the alignment pattern and the circuit pattern and between the alignment pattern and the probe, In step (e), It is performed by increasing the Gibbs free energy of the alignment pattern (Gibbs free energy) Probe bonding method. The method of claim 1, Step (b) or step (c) is, A probe bonding method performed by using a photolithography process. The method of claim 1, In step (d), Probe bonding method is performed using a robot that stores the program related to the alignment. delete The method of claim 1, In step (e), And performing the alignment pattern to face the ground. The method of claim 1, Surface of the substrate main body portion is unevenness probe bonding method. In the method of bonding the probe to the substrate, (a) providing a substrate comprising a substrate body portion and a plurality of circuit patterns having a first height from a surface of the substrate body portion, (b) forming an alignment pattern having a second height higher than the first height from the surface of the substrate main body on each of the circuit patterns; (c) providing a plurality of probes including an alignment part corresponding to the alignment pattern; (d) the plurality of probes such that the outermost ends of the plurality of probes facing the alignment portions are positioned on one parallel line by contacting the alignment portions of each of the probes with the alignment patterns formed on the circuit patterns. Arranging on the plurality of circuit patterns of the substrate and (e) bonding the plurality of probes to the substrate by melting the alignment pattern and adhering between the alignment pattern and the circuit pattern and between the alignment pattern and the probe, In step (e), To increase the Gibbs free energy of the alignment pattern Probe bonding method. The method of claim 7, wherein At least one of the steps (b), (c), (d) and (e), Probe bonding method that is performed using one process. The method of claim 7, wherein Step (b) or step (c) is, A probe bonding method performed by using a photolithography process. The method of claim 7, wherein In step (d), Probe bonding method is performed using a robot that stores the program related to the alignment. delete The method of claim 7, wherein In step (e), And performing the alignment pattern to face the ground. The method of claim 7, wherein Surface of the substrate main body portion is unevenness probe bonding method.
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US11061052B2 (en) 2018-09-11 2021-07-13 Samsung Electronics Co., Ltd. Probe including an alignment key protruded from a side of an alignment beam and a probe card including the same

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US11061052B2 (en) 2018-09-11 2021-07-13 Samsung Electronics Co., Ltd. Probe including an alignment key protruded from a side of an alignment beam and a probe card including the same

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