JP2005340485A - Manufacturing method and correction tool of substrate for inspection - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve the positional precision of bump terminals and isolated pad terminals in a sheet with a bump constituting a substrate for inspection (probe card). <P>SOLUTION: The sheet 10 is formed with the bump consisting of a polyimide film 12, the plurality of bump terminals 15, and the plurality of isolated pad terminals 11a. Thereafter, the tension of the polyimide film 12 by a second rigid ring 14 is adjusted by a bump position correction tool 30, so that the position of each bump terminal 15 at the polyimide film 12 may match with a prescribed position. Subsequently, a first rigid ring 16 to be used originally is adhered to the inside of the second rigid ring 14 at the polyimide film 12 so as to hold the position of each bump terminal 15 corrected to the prescribed position. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an inspection substrate manufacturing method and an inspection substrate correction jig capable of collectively inspecting (testing) a plurality of semiconductor chips formed on a semiconductor wafer in a wafer state, and more particularly to the configuration of an inspection substrate. The present invention relates to a bumped sheet manufacturing method and a bump position correcting jig.

  2. Description of the Related Art In recent years, electronic devices equipped with semiconductor integrated circuit devices (hereinafter referred to as “semiconductor devices”) have made remarkable progress in downsizing and cost reduction. Accordingly, there is a strong demand for downsizing and cost reduction of semiconductor devices. It has become.

  In a semiconductor device, normally, a semiconductor chip and a lead frame are electrically connected by a bonding wire, and further, the semiconductor chip and the lead frame are supplied in a state of being sealed with resin or ceramic, and mounted on a printed circuit board. . However, due to the demand for downsizing of electronic devices, a method of directly mounting a semiconductor chip cut out from a semiconductor wafer, a so-called bare chip, on a circuit board has been developed. Such a bare chip is directly mounted on the circuit board. In order to cope with the mounting method mounted above, it is desired to supply bare chips with guaranteed quality at a low price.

  In order to guarantee the quality of the bare chip, it is necessary to inspect a plurality of semiconductor chips formed on the semiconductor wafer such as burn-in at the wafer level (wafer state). However, since it takes a lot of time to inspect a plurality of semiconductor chips on a semiconductor wafer one by one or several times, it is not realistic in terms of time and cost. Therefore, it is required to perform an inspection such as burn-in on all the semiconductor chips on the semiconductor wafer at the wafer level.

  In order to inspect a plurality of semiconductor chips at the same time at the wafer level, a power supply voltage and a signal are simultaneously applied to the inspection electrodes of the plurality of semiconductor chips formed on the semiconductor wafer, and the plurality of semiconductor chips It is necessary to operate the chip simultaneously. For this purpose, it is necessary to prepare a test substrate having a very large number (usually several thousand or more) of probe terminals. To do this, the conventional needle-type test substrate has the number of pins. Neither from the point of view nor from the point of price.

  Thus, an inspection substrate has been proposed in which a plurality of probe terminals made of bumps can be simultaneously contacted with a plurality of inspection electrodes of a plurality of semiconductor chips on a semiconductor wafer (see, for example, Patent Document 1).

  Hereinafter, a conventional inspection substrate will be described with reference to a partial sectional view of FIG.

  As shown in FIG. 7, a semiconductor wafer 102 on which a plurality of semiconductor elements are formed for each chip formation region is held on a wafer tray 101, and a plurality of semiconductor wafers 102 are provided on the main surface (upper surface) of the semiconductor wafer 102. An inspection electrode 103 is formed.

  The bumped sheet 401 has a plurality of bump terminals 402 formed at positions facing the inspection electrode 103 on the semiconductor wafer 102, and is electrically connected to the bump terminals 402 on the surface facing the wiring substrate 201. A plurality of isolated pad terminals 403 are formed.

  An elastic sheet member 301 made of, for example, rubber is provided between the wiring substrate 201 and the bumped sheet 401. The elastic sheet member 301 includes a plurality of lower layer wirings 202, upper layers formed on the lower surface of the wiring substrate 201. It is formed so as to cover the wiring 203 and the substrate electrode 204.

  Each substrate electrode 204 is provided at a position corresponding to each of the isolated pad terminals 403 formed on the bumped sheet 401, and each substrate electrode 204 and each isolated pad terminal 403 is in the thickness direction of the bumped sheet 401. Are electrically connected by a plurality of conductive particle arrays (conductors) 302 connected in a chain.

  At the time of inspection, the inspection substrate 200 having the wiring substrate 201 and the bumped sheet 401 is pressed against the semiconductor wafer 102, and each inspection electrode 103 of the semiconductor wafer 102 and the bump terminal 402 of the bumped sheet 401 contact each other. Is done.

  Here, the portion of the elastic sheet member 301 where the conductive particle row 302 is formed forms a protruding portion that protrudes toward the bumped sheet 401, and the bump terminal 402 of the bumped sheet 401 is formed by the protruding portion on the semiconductor wafer. The bump terminals 402 and the inspection electrodes are pressed over the entire main surface of the semiconductor wafer 102 even when the semiconductor wafer 102 is pressed by the inspection electrode 103 provided on the semiconductor wafer 102 and has a stepped portion or warped. Secure contact with 103 can be ensured.

  Next, a method for manufacturing a bumped sheet 401, which is a component constituting the inspection substrate 200, has been proposed (see, for example, Patent Document 2).

  Hereinafter, a conventional method for manufacturing a sheet with bumps will be described with reference to the cross-sectional view of FIG.

  As shown in FIG. 8 (a), after casting a polyimide precursor to a thickness of about 25 μm on a copper foil 404 having a thickness of about 18 μm, the polyimide precursor is heated and dried and cured to obtain a copper foil. A laminated film 406 obtained by bonding 404 and a polyimide film 405 is prepared. Next, a thermosetting adhesive is thinly and uniformly applied to one surface of a planar ring-shaped rigid ring 501 having a diameter of about 300 mm (12 inches) and a thickness of about 4 mm, for example, to a thickness of 50 μm to 100 μm. Here, as the thermosetting adhesive, an adhesive that cures at a temperature about 0 to 50 degrees higher than the set temperature (80 ° C. to 150 ° C.) of the burn-in test is used. Subsequently, the laminated film 406 and the rigid ring 501 are bonded to each other by heating at a temperature equal to or higher than a set temperature (80 ° C. to 150 ° C.) for inspection such as burn-in, for example, at 200 ° C. for about 2.5 hours. Next, the bonded laminated film 406 and the rigid ring 501 are cooled to room temperature and contracted to a state before heating. Subsequently, the outer portion of the rigid ring 501 in the laminated film 406 is cut and removed along the outer periphery with a cutter.

  Next, as shown in FIG. 8B, a plurality of bump holes 405a having a diameter of about 30 μm are formed at predetermined positions on the polyimide film 405 constituting the laminated film 406 using an excimer laser.

  Next, as shown in FIG. 8C, after protecting (masking) the surface of the copper foil 404 constituting the laminated film 406 so as not to be plated, one of the electrodes for plating is connected to the copper foil 404 to form nickel. (Ni) is electroplated. At this time, after the nickel plating grows so as to fill the bump holes 405a, when it reaches the surface of the polyimide film 405, it isotropically spreads and grows into a substantially hemispherical shape. Bump terminals 402 are formed.

  Next, as shown in FIG. 8 (d), a resist is applied on the copper foil 404, and the applied resist is selectively exposed and developed, whereby the formation region of each isolated pad terminal is formed. A covering resist pattern 408 is formed.

  Next, as shown in FIG. 8E, a plurality of isolated pad terminals 403 are formed from the copper foil 404 by etching the copper foil 404 using the formed resist pattern 408 as a mask. Through the above steps, the bumped sheet 401 is manufactured.

In this manner, the sheet 401 with bumps is attached to a rigid ring 501 having a thermal expansion coefficient close to that of silicon while maintaining tension, so that the heat of the polyimide film 405 can be increased even at a burn-in temperature (for example, about 120 ° C.). Regardless of expansion, it can follow the thermal expansion and contraction of the rigid ring 501.
Japanese Patent Laid-Open No. 7-231019 Japanese Patent Laid-Open No. 11-67856

  However, the bump-equipped sheet 401 in the conventional inspection substrate 200 is given tension in a state in which the laminated film 406 formed by bonding the copper foil 404 and the polyimide film 405 is thermally expanded, and the rigid ring 501 in this state. Therefore, the shrinkage tension of the copper foil 404 is applied in the center direction of the rigid ring 501 when the temperature is returned to room temperature after bonding. At this time, the rigid ring 501 contracts by about 50 μm to 150 μm in the radial direction due to the tension of the copper foil 404, for example, when the diameter of the rigid ring is 12 inches (300 mm). Thereafter, when the copper foil 404 is etched to form each isolated pad terminal 403, most of the copper foil 404 is removed by etching, so that the contraction tension applied to the center direction by the copper foil 404 is released. As a result, the rigid ring 501 attempts to return to its original size. At this time, although the tension of the polyimide film 405 remains, it is much smaller than the tension of the copper foil 404, so that the rigid ring 501 returns almost to its original dimension.

  As a result, the flexible polyimide film 405 follows the movement of the rigid ring 501 to return to the original dimension, so that the positions of the bump terminal 402 and the isolated pad terminal 403 on the polyimide film 405 are shifted to the outside, and the pad terminal 402 In addition, there is a problem that the accuracy of the position of the isolated pad terminal 403 is deteriorated.

  In particular, since the pitch of semiconductor devices and the area of pads have been reduced in recent years, the demand for the positional accuracy of the bump terminals 402 has become strict, for example, within ± 10 μm, and the demand can be met. It has become difficult.

  In view of the conventional problems, an object of the present invention is to improve the accuracy of the positions of bump terminals and isolated pad terminals in a sheet with bumps.

  In order to achieve the above object, the present invention provides a method for manufacturing an inspection substrate and a correction jig for an inspection substrate, and after forming bump terminals and isolated pad terminals on a sheet with bumps constituting the inspection substrate, bumps The position of the bump terminal and the isolated pad terminal is corrected by mechanically adjusting the tension of the attached sheet from the outside.

  Specifically, a first inspection substrate manufacturing method according to the present invention is directed to an inspection substrate manufacturing method for collectively inspecting electrical characteristics of a plurality of semiconductor chips at a wafer level, and is insulated from a conductive film. A laminated film is prepared by laminating an adhesive film, and a second rigid ring having an inner diameter larger than the outer diameter of the first rigid ring used during inspection is bonded to the prepared laminated film in a heated state. And after cooling the laminated film bonded to the second rigid ring, forming a plurality of bump holes at predetermined positions of the insulating film, filling each bump hole with a conductive material, and insulating Forming a plurality of bump terminals on the exposed surface of the conductive film and patterning the conductive film so as to leave a connection portion with each bump terminal. By forming the isolated pad terminals, the step of forming a sheet with bumps made of an insulating film, a plurality of bump terminals and a plurality of isolated pad terminals coincides with the position of each bump terminal in the insulating film. As described above, the step of adjusting the tension by the second rigid ring of the insulating film by the bump position correcting jig, and the second position of the insulating film so as to hold the position of each bump terminal corrected to a predetermined position. And a step of adhering the first rigid ring to the inside of the rigid ring.

  According to the first inspection substrate manufacturing method, after the bumped sheet is formed, the second position of the insulating film is adjusted by the bump position correcting jig so that the position of each bump terminal in the insulating film matches the predetermined position. Adjusting the tension by the rigid ring, and bonding the first rigid ring inside the second rigid ring in the insulating film so as to hold the position of each bump terminal corrected to a predetermined position; Therefore, after forming a plurality of isolated pad terminals from the conductive film, the second rigid ring returns to the original dimensions, and the positions of the bump terminals and the isolated pad terminals on the insulating film are outside. Even if they are misaligned, the tension of the second rigid ring of the insulating film is adjusted by the bump position correcting jig, and the position of each bump terminal on the insulating film is adjusted. It can be a match with the predetermined position.

  A second inspection substrate manufacturing method according to the present invention is directed to an inspection substrate manufacturing method for collectively inspecting electrical characteristics of a plurality of semiconductor chips at a wafer level, and includes a conductive film and an insulating film. A laminated film prepared is prepared, a step of bonding the rigid ring to the prepared laminated film in a heated state, and after cooling the laminated film bonded to the rigid ring, a plurality of films are provided at predetermined positions on the insulating film. Forming each bump hole, filling each bump hole with a conductive material to form a plurality of bump terminals on the exposed surface of the insulating film, and each bump terminal with respect to the conductive film By patterning so as to leave a connection portion of the conductive film, and forming a plurality of isolated pad terminals from the conductive film, an insulating film, a plurality of bump terminals, and a plurality of A step of forming a sheet with bumps composed of standing pad terminals, and a step of adjusting the tension by the rigid ring of the insulating film by a bump position correcting jig so that the position of each bump terminal in the insulating film coincides with a predetermined position. And a step of fixing the insulating film and the rigid ring with a holding member so as to hold the position of each bump terminal corrected to a predetermined position.

  According to the second inspection substrate manufacturing method, after forming the sheet with bumps, the bump position correcting jig is used to fix the rigid ring of the insulating film so that the position of each bump terminal in the insulating film matches the predetermined position. And a step of fixing the insulating film and the rigid ring with a holding member so as to hold the position of each bump terminal corrected to a predetermined position. After forming multiple isolated pad terminals, even if the rigid ring returns to its original dimensions and the positions of the bump terminals and isolated pad terminals on the insulating film are shifted outward, the bump position correction jig By adjusting the tension by the rigid ring of the insulating film, the position of each bump terminal in the insulating film can be matched with the predetermined position.

  In the second method for manufacturing a test substrate, the holding member is preferably made of the same material as the rigid ring.

  In addition, the first or second inspection substrate manufacturing method includes a bump position correction mark used for correcting the position of each bump terminal on the insulating film before the step of adjusting the tension of the insulating film. It is preferable that the method further includes the step of forming.

  The inspection substrate correction jig according to the present invention corrects the position of the plurality of bump terminals formed on the bumped sheet of the inspection substrate that collectively inspects the electrical characteristics of the plurality of semiconductor chips at the wafer level. In the sheet with bumps, a rigid ring and an insulating film are bonded to each other, and a plurality of bump terminals and a position of the plurality of bump terminals are corrected in a region inside the rigid ring. Bump position correction marks are formed, and the inspection substrate correction jig adjusts the tension due to the rigid ring of the insulating film while holding the insulating film, so that each bump terminal in the insulating film is adjusted. A bump position adjustment unit that matches a position with a predetermined position, and a bump position correction reference mark that indicates a position that serves as a reference for the bump position correction mark are provided.

  According to the inspection substrate correction jig of the present invention, the inspection substrate correction jig adjusts the tension by the rigid ring of the insulating film while holding the insulating film, and each bump terminal in the insulating film. A bump position adjustment section that matches the position of the bump position with a predetermined position and a bump position correction reference mark that indicates a position that serves as a reference for the bump position correction mark, so that after forming a plurality of isolated pad terminals on the insulating film Even if the rigid ring returns to its original dimensions and the position of the bump terminal on the insulating film is shifted to the outside, the bump position adjuster adjusts the tension by the rigid ring of the insulating film to the bump position correction mark. To adjust the position of each bump terminal on the insulating film. It can be matched with the position.

  According to the inspection substrate manufacturing method and the inspection substrate correction jig according to the present invention, the bump terminal and the isolated pad terminal formed on the bumped sheet by mechanically adjusting the tension of the bumped sheet from the outside. The accuracy of each position can be improved.

(First embodiment)
A first embodiment of the present invention will be described with reference to the drawings.

  1 (a) to 1 (d) and FIGS. 2 (a) to 2 (c) are steps of a method for manufacturing a bumped sheet, which is a component of the inspection substrate according to the first embodiment of the present invention. A cross-sectional configuration in order is shown.

  Hereinafter, the manufacturing method of the sheet | seat with a bump which comprises the board | substrate for a test | inspection which concerns on 1st Embodiment is demonstrated using FIG.1 and FIG.2.

  First, as shown in FIG. 1A, after casting a polyimide precursor to a thickness of about 25 μm on a copper foil 11 having a thickness of about 18 μm, the cast polyimide precursor is heated and dried and cured. Thus, a laminated film 13 in which a copper foil 11 as a conductive film and a polyimide film 12 as an insulating film are bonded together is prepared. Subsequently, a temporary second rigid ring 14 having an inner diameter larger than that of the first rigid ring having a diameter of about 300 mm (12 inches) and a thickness of about 4 mm originally used for the inspection is prepared. The thermosetting adhesive is thinly applied on one surface thereof, for example, uniformly applied to a thickness of 50 μm to 100 μm. Here, as the thermosetting adhesive, an adhesive that cures at a temperature about 0 to 50 degrees higher than the set temperature (80 ° C. to 150 ° C.) of the burn-in test is used. Subsequently, the laminated film 13 and the second rigid ring 14 are bonded to each other by heating at a temperature equal to or higher than a set temperature (80 ° C. to 150 ° C.) for inspection such as burn-in, for example, 200 ° C. for about 3 hours. Thereafter, the laminated film 13 and the second rigid ring 14 bonded are cooled to room temperature, and the laminated film 13 and the second rigid ring 14 are contracted to a state before heating. Subsequently, the outer portion of the second rigid ring 14 in the laminated film 13 is cut and removed along the outer periphery by a cutter (not shown).

  Next, as shown in FIG. 1B, a plurality of bump holes 12a having a diameter of about 30 μm are formed at the bump hole formation positions in the polyimide film 12 constituting the laminated film 13 using, for example, an excimer laser. . At this time, a plurality of bump position correction marks 12b are formed in a region outside the bump hole formation position in the polyimide film 12 and inside the first rigid ring originally used.

  Next, although not shown, after protecting (masking) the surface of the copper foil 11 and each bump position correction mark 12b with a resist or the like so as not to be plated, one of the plating electrodes is connected to the copper foil 11 As shown in FIG. 1C, electroplating of nickel (Ni) is performed. After the nickel, which is a conductive material by this electroplating, grows so as to fill each bump hole 12a, when it reaches the surface of the polyimide film 12, it then expands isotropically and grows into a substantially hemispherical shape, A plurality of bump terminals 15 each made of a hard nickel alloy having a cylindrical lower portion and a hemispherical upper portion are formed.

  Next, as shown in FIG. 1 (d), a resist is applied on the surface of the copper foil 11, and the applied resist is selectively exposed and developed, thereby forming each isolated pad terminal forming region. A resist pattern 21 is formed to cover the substrate.

  Next, as shown in FIG. 2A, a plurality of isolated pad terminals 11 a are formed from the copper foil 11 by etching the copper foil 11 using the formed resist pattern 21 as a mask.

  Next, as shown in FIG. 2 (b), bump position correction marks 12 b formed in advance on the polyimide film 12 using the bump position correction jig 30, and each bump provided on the bump position correction jig 30. The position of each bump terminal 15 is corrected by aligning the bump position correction reference mark which is a reference (index) of the predetermined position of the terminal 15 with each other. Thereafter, in order to fix the position of each bump terminal 15 whose position has been corrected, the originally used first rigid ring 16 is placed in the region inside the second rigid ring 14 in the polyimide film 12 and the second rigid ring 16 is used. Bonding is performed in the same manner as the rigid ring 14.

  The specific configuration of the bump position correction jig 30 will be described in detail in the third embodiment. The bump position correction jig 30 is provided on the bump position correction mark 12b formed on the polyimide film 12 and the bump position correction jig 30. Tension is applied to the polyimide film 12 outward or inward in the in-plane direction (radial direction) so that the bump position correction reference mark matches.

  Next, as shown in FIG.2 (c), the outer part of the 1st rigid ring 16 in the polyimide film 12 is cut | disconnected and removed along the outer periphery with a cutter (not shown). Thereby, the sheet | seat 10 with a bump | vamp with which each position of the bump terminal 15 and the isolated pad terminal 11a was correct | amended can be obtained.

  According to the first embodiment, since the positions of the bump terminals 15 and the isolated pad terminals 11a formed on the bumped sheet 10 are corrected to predetermined positions, the inspection electrodes formed on the bump terminals 15 and the semiconductor wafer. It is possible to prevent the occurrence of defects that cause poor electrical connection with the.

  In the first embodiment, copper foil is used for the conductive film, polyimide film is used for the insulating film, and nickel plating is used as the conductive material. However, the present invention is not limited to these materials, Other materials can be used as long as they have the respective characteristics.

  Further, as the constituent material of each of the rigid rings 14 and 16, for example, silicon carbide (SiC) or low expansion glass or metal having a thermal expansion coefficient close to that of silicon (Si) can be used.

(Second Embodiment)
Hereinafter, a second embodiment of the present invention will be described with reference to the drawings.

  3 (a) to 3 (d), FIG. 4 (a) and FIG. 4 (b) show a method for manufacturing a bumped sheet which is a component constituting an inspection substrate according to the second embodiment of the present invention. The cross-sectional structure in the order of processes is shown.

  Hereinafter, the manufacturing method of the sheet | seat with a bump which comprises the board | substrate for an inspection which concerns on 2nd Embodiment is demonstrated, referring sectional drawing of FIG.3 and FIG.4.

  First, as shown in FIG. 3A, after casting a polyimide precursor to a thickness of about 25 μm on a copper foil 11 having a thickness of about 18 μm, the cast polyimide precursor is heated and dried and cured. Thus, a laminated film 13 in which a copper foil 11 as a conductive film and a polyimide film 12 as an insulating film are bonded together is prepared. Subsequently, a thermosetting adhesive is thinly formed on one surface of the rigid ring 26 having a plane ring shape diameter of about 300 mm (12 inches) and a thickness of about 4 mm, for example, uniformly to a thickness of 50 μm to 100 μm. Apply. Here, as the thermosetting adhesive, an adhesive that cures at a temperature about 0 to 50 degrees higher than the set temperature (80 ° C. to 150 ° C.) of the burn-in test is used. Subsequently, the laminated film 13 and the rigid ring 26 are bonded to each other by heating at a temperature equal to or higher than the set temperature (80 ° C. to 150 ° C.) for inspection such as burn-in, for example, at 200 ° C. for about 3 hours. Thereafter, the laminated film 13 and the rigid ring 26 bonded are cooled to room temperature, and the laminated film 13 and the rigid ring 26 are contracted to a state before heating. Subsequently, the outer portion of the rigid ring 26 in the laminated film 13 is cut and removed along the outer periphery with a cutter (not shown).

  Next, as shown in FIG. 3B, a plurality of bump holes 12 a having a diameter of about 30 μm are formed at the formation positions of the bump holes in the polyimide film 12 constituting the laminated film 13 using, for example, an excimer laser. . At this time, a plurality of bump position correction marks 12b are formed in a region outside the bump hole formation position in the polyimide film 12.

  Next, although not shown, after protecting (masking) the surface of the copper foil 11 and each bump position correction mark 12b with a resist or the like so as not to be plated, one of the plating electrodes is connected to the copper foil 11 As shown in FIG. 3C, electroplating of nickel (Ni) is performed. After this electroplating, nickel, which is a conductive material, grows so as to fill each bump hole 12a, and then reaches the surface of the polyimide film 12, it then expands isotropically and grows into a substantially hemispherical shape, A plurality of bump terminals 15 each made of a hard nickel alloy having a cylindrical lower portion and a hemispherical upper portion are formed.

  Next, as shown in FIG. 3 (d), a resist is applied on the surface of the copper foil 11, and the applied resist is selectively exposed and developed to thereby form each isolated pad terminal formation region. A resist pattern 21 is formed to cover the substrate.

  Next, as shown in FIG. 4A, a plurality of isolated pad terminals 11 a are formed from the copper foil 11 by etching the copper foil 11 using the formed resist pattern 21 as a mask.

  Next, using the bump position correction jig 30 shown in FIG. 2B of the first embodiment, the bump position correction mark 12b formed in advance on the polyimide film 12 and the bump position correction jig 30 are provided. In addition, the position of each bump terminal 15 is corrected by aligning the bump position correction reference marks, which serve as a reference (indicator) for the predetermined position of each bump terminal 15, with each other. Thereafter, in order to fix the position of each bump terminal 15 whose position has been corrected, it is made of the same material as that of the rigid ring 26, and is in the shape of a flat ring and comes into contact with the polyimide film 12 at the inner portion thereof, and at the outer portion, A holding member 41 having a bent portion in a cross section is fixed to the polyimide film 12 and the rigid ring 26 so as to be in contact with each other. Thereby, the sheet | seat 10 with a bump | vamp with which each position of the bump terminal 15 and the isolated pad terminal 11a was correct | amended can be obtained.

  According to the second embodiment, since the positions of the bump terminals 15 and the isolated pad terminals 11a formed on the bumped sheet 10 are corrected to predetermined positions, the bump terminals 15 and the inspection electrodes formed on the semiconductor wafer. It is possible to prevent the occurrence of defects that cause poor electrical connection with the.

  In the second embodiment, copper foil is used as the conductive film, polyimide film is used as the insulating film, and nickel plating is used as the conductive material. However, the present invention is not limited to these materials. Other materials can be used as long as they have the respective characteristics.

  Further, as the constituent material of the rigid ring 26 and the holding member 41, for example, silicon carbide (SiC) or low expansion glass or metal having a thermal expansion coefficient close to that of silicon (Si) can be used.

(Third embodiment)
Hereinafter, a third embodiment of the present invention will be described with reference to the drawings.

  5, FIG. 6 (a) and FIG. 6 (b) show a sectional configuration of a correction jig for an inspection substrate and a method for manufacturing an inspection substrate using the same according to the third embodiment of the present invention in order of steps. ing. 5 and 6, the same components as those shown in FIG. 1 are denoted by the same reference numerals, and description thereof is omitted.

  As shown in FIG. 5, the bump position correction jig 30 according to the third embodiment is a correction jig that corrects the position of the bump terminal 15 formed on the bumped sheet 10, for example, aluminum (Al The plate-shaped correction jig main body 31 and the polyimide film 12 constituting the bumped sheet 10 are sandwiched from the front and back surfaces of the second correction jig main body 31 and the correction jig main body 31. A bump position adjusting unit 32 that corrects the position of each bump terminal 15 by adjusting the tension of the polyimide film 12 stretched on the rigid ring 14. Here, only one end of the bumped sheet 10 is shown enlarged.

  A bump position correction reference mark 36 indicating the reference position of the bump position correction mark 12b formed on the peripheral edge of the bumped sheet 10 is provided in the inner region of the bump position adjustment unit 31 on the correction jig main body 31. ing.

  The bump position adjustment unit 32 includes a lower mechanism unit 33 that is movably provided in a peripheral direction of the correction jig body 31 in a direction parallel to the main surface of the correction jig body 31 by a cam mechanism or the like, and the lower mechanism unit 33. Is composed of an upper mechanism portion 34 connected by a hinge portion 35.

  A lower pinching portion 33a and an upper pinching portion 34a are formed at the opposite ends of the hinge portion 35 in the lower mechanism portion 33 and the upper mechanism portion 34 so as to sandwich the bumped sheet 10 therebetween. . Here, the upper mechanism 34 in the bump position adjusting unit 32 is divided so that the bumped sheet 10 can be attached to and detached from the correction jig body 31.

  Further, the correction jig body 31 has an elevating part having an elevating mechanism for adhering the originally used first rigid ring 16 to the back surface of the bumped sheet 10 inside the second rigid ring 14 of the bumped sheet 10. 37 is provided. Here, it is preferable that the elevating part 37 has a heating means so that the thermosetting adhesive can be cured.

  Hereinafter, a method of correcting the bump terminals 15 of the bumped sheet 10 using the bump position correcting jig 30 will be described with reference to FIGS.

  First, as shown in FIG. 5, the bumped sheet 10 is placed and held on the correction jig body 31 of the bump position correction jig 30. Subsequently, using the microscope 40 or the like, the bump position adjustment unit 12a is arranged so that the bump position correction mark 12a provided on the bumped sheet 10 and the bump position correction reference mark 36 provided on the correction jig body 31 overlap each other. The position of each bump terminal 15 is adjusted by moving 32 to the inside or outside in the radial direction and adjusting the tension of the polyimide film 12 by the second rigid ring 14.

  Next, as shown in FIG. 6A, in order to fix the position of the corrected bump terminal 15 to the polyimide film 12, the first rigid ring 16 is bonded by driving the elevating part 37 upward. To do.

  When the holding member 41 is used instead of the temporary second rigid ring as in the second embodiment, a mechanism capable of raising and lowering the holding member 41 and bonding the correction member main body 31 is provided. .

  Next, as shown in FIG. 6B, the upper mechanism 34 of the bump position adjusting unit 32 is opened, and the completed bumped sheet 10 is removed from the bump position correcting jig 30.

  Thereby, the sheet | seat 10 with a bump | vamp with which each position of the bump terminal 15 and the isolated pad terminal 11a was correct | amended can be obtained.

  INDUSTRIAL APPLICABILITY The inspection substrate manufacturing method and inspection substrate correction jig according to the present invention can further improve the accuracy of the positions of bump terminals and isolated pad terminals, and in particular, a plurality of semiconductors formed on a semiconductor wafer. It is useful as an inspection substrate for collectively inspecting the electrical characteristics of a chip in a wafer state.

(A)-(d) is the manufacturing method of the board | substrate for a test | inspection which concerns on the 1st Embodiment of this invention, Comprising: It is a structure sectional drawing of the order of a process which shows the manufacturing method of a sheet | seat with a bump. (A)-(c) is the manufacturing method of the board | substrate for an inspection which concerns on the 1st Embodiment of this invention, Comprising: It is a structure sectional drawing of the order of a process which shows the manufacturing method of a sheet | seat with a bump. (A)-(d) is the manufacturing method of the board | substrate for a test | inspection which concerns on the 2nd Embodiment of this invention, Comprising: It is a structure sectional drawing of the order of a process which shows the manufacturing method of a sheet | seat with a bump. (A) And (b) is the manufacturing method of the board | substrate for an inspection which concerns on the 2nd Embodiment of this invention, Comprising: It is a structure sectional drawing of the order of a process which shows the manufacturing method of a sheet | seat with a bump. It is a partial composition sectional view showing a manufacturing method of a substrate for inspection using a bump position amendment jig concerning a 3rd embodiment of the present invention. (A) And (b) is a partial structure sectional view showing a manufacturing method of a substrate for inspection using a bump position amendment jig concerning a 3rd embodiment of the present invention. It is a fragmentary sectional view showing a conventional inspection substrate and a semiconductor wafer to be inspected. It is composition sectional drawing of the order of a process which shows the manufacturing method of the conventional board | substrate for a test | inspection.

Explanation of symbols

10 Bumped sheet 11 Copper foil (conductive film)
11a Isolated pad terminal 12 Polyimide film (insulating film)
12a Bump hole 12b Bump position correction mark 13 Laminated film 14 Second rigid ring 15 Bump terminal 16 First rigid ring 21 Resist pattern 26 Rigid ring 30 Bump position correction jig 31 Correction jig main body 32 Bump position adjustment section 33 Lower part Mechanism part 33a Lower clip part 34 Upper mechanism part 34a Upper clip part 35 Hinge part 36 Bump position correction reference mark 37 Lifting part 41 Holding member

Claims (5)

A method for manufacturing an inspection substrate for collectively inspecting electrical characteristics of a plurality of semiconductor chips at a wafer level,
A laminated film in which a conductive film and an insulating film are laminated is prepared, and a second rigidity having an inner diameter larger than the outer diameter of the first rigid ring used at the time of inspection is prepared for the prepared laminated film. Bonding the ring in a heated state;
After cooling the laminated film bonded to the second rigid ring, forming a plurality of bump holes at predetermined positions of the insulating film;
Filling each bump hole with a conductive material and forming a plurality of bump terminals on the exposed surface of the insulating film; and
The insulating film and the plurality of bumps are formed by patterning the conductive film so as to leave connection portions with the bump terminals and forming a plurality of isolated pad terminals from the conductive film. Forming a bumped sheet comprising a terminal and the plurality of isolated pad terminals;
Adjusting the tension due to the second rigid ring of the insulating film by a bump position correction jig so that the position of each bump terminal in the insulating film matches the predetermined position;
Adhering the first rigid ring to the inner side of the second rigid ring in the insulating film so as to hold the position of each bump terminal corrected to the predetermined position. A method for manufacturing an inspection substrate. A method for manufacturing an inspection substrate for collectively inspecting electrical characteristics of a plurality of semiconductor chips at a wafer level,
Preparing a laminated film in which a conductive film and an insulating film are laminated, and bonding the rigid ring to the prepared laminated film in a heated state;
After cooling the laminated film bonded to the rigid ring, forming a plurality of bump holes at predetermined positions of the insulating film;
Filling each bump hole with a conductive material, and forming a plurality of bump terminals on the exposed surface of the insulating film;
The insulating film and the plurality of bumps are formed by patterning the conductive film so as to leave connection portions with the bump terminals and forming a plurality of isolated pad terminals from the conductive film. Forming a bumped sheet comprising a terminal and the plurality of isolated pad terminals;
Adjusting the tension due to the rigid ring of the insulating film by a bump position correction jig so that the position of each bump terminal in the insulating film matches the predetermined position;
And a step of fixing the insulating film and the rigid ring with a holding member so as to hold the position of each bump terminal corrected to the predetermined position. .   The method for manufacturing an inspection substrate according to claim 2, wherein the holding member is made of the same material as the rigid ring. Before the step of adjusting the tension of the insulating film,
3. The method of manufacturing an inspection substrate according to claim 1, further comprising a step of forming a bump position correction mark used for correcting the position of each bump terminal on the insulating film. . An inspection substrate correction jig for correcting the positions of a plurality of bump terminals formed on a bumped sheet of an inspection substrate for collectively inspecting electrical characteristics of a plurality of semiconductor chips at a wafer level,
The sheet with bumps is formed by bonding a rigid ring and an insulating film to each other, and a plurality of bump terminals in a region inside the rigid ring and bump positions for correcting the positions of the bump terminals A correction mark is formed,
The inspection substrate correction jig is:
In a state where the insulating film is held firmly, a tension by the rigid ring of the insulating film is adjusted, and a bump position adjusting unit that matches a position of each bump terminal in the insulating film with a predetermined position;
A correction jig for an inspection substrate, comprising: a bump position correction reference mark indicating a position serving as a reference for the bump position correction mark.

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