JP2007535178A - ホットエレクトロン・トランジスタ - Google Patents
ホットエレクトロン・トランジスタ Download PDFInfo
- Publication number
- JP2007535178A JP2007535178A JP2007510882A JP2007510882A JP2007535178A JP 2007535178 A JP2007535178 A JP 2007535178A JP 2007510882 A JP2007510882 A JP 2007510882A JP 2007510882 A JP2007510882 A JP 2007510882A JP 2007535178 A JP2007535178 A JP 2007535178A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- transistor
- emitter
- collector
- base electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002784 hot electron Substances 0.000 title claims abstract description 149
- 238000000034 method Methods 0.000 claims abstract description 106
- 239000012212 insulator Substances 0.000 claims abstract description 91
- 230000005641 tunneling Effects 0.000 claims abstract description 17
- 230000004888 barrier function Effects 0.000 claims description 142
- 229910052751 metal Inorganic materials 0.000 claims description 87
- 239000002184 metal Substances 0.000 claims description 87
- 229910021332 silicide Inorganic materials 0.000 claims description 17
- 230000005428 wave function Effects 0.000 claims description 14
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 11
- 230000005525 hole transport Effects 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 239000010409 thin film Substances 0.000 abstract description 33
- 230000006870 function Effects 0.000 abstract description 24
- 239000010410 layer Substances 0.000 description 115
- 230000008569 process Effects 0.000 description 83
- 238000004519 manufacturing process Methods 0.000 description 42
- 238000010586 diagram Methods 0.000 description 38
- 239000000463 material Substances 0.000 description 22
- 238000009826 distribution Methods 0.000 description 21
- 239000000758 substrate Substances 0.000 description 18
- 239000010953 base metal Substances 0.000 description 13
- 230000010355 oscillation Effects 0.000 description 13
- 238000001020 plasma etching Methods 0.000 description 13
- 238000000151 deposition Methods 0.000 description 12
- 150000002739 metals Chemical class 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 230000008021 deposition Effects 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- 239000010955 niobium Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000001803 electron scattering Methods 0.000 description 8
- 230000006872 improvement Effects 0.000 description 8
- 238000013459 approach Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 7
- 239000002131 composite material Substances 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 238000011161 development Methods 0.000 description 5
- 230000018109 developmental process Effects 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 230000033001 locomotion Effects 0.000 description 4
- 229910052752 metalloid Inorganic materials 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000005546 reactive sputtering Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 150000002738 metalloids Chemical class 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000007493 shaping process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005294 ferromagnetic effect Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000005291 magnetic effect Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000007790 scraping Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 229910018999 CoSi2 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000003877 atomic layer epitaxy Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- -1 but not limited to Substances 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 235000019988 mead Nutrition 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000003534 oscillatory effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/7606—Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US56570004P | 2004-04-26 | 2004-04-26 | |
| PCT/US2005/014249 WO2005106927A2 (fr) | 2004-04-26 | 2005-04-25 | Transistor a electrons chauds |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2007535178A true JP2007535178A (ja) | 2007-11-29 |
Family
ID=35242334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007510882A Pending JP2007535178A (ja) | 2004-04-26 | 2005-04-25 | ホットエレクトロン・トランジスタ |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP1743379A2 (fr) |
| JP (1) | JP2007535178A (fr) |
| KR (1) | KR20070053160A (fr) |
| CN (1) | CN101015066A (fr) |
| WO (1) | WO2005106927A2 (fr) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007258308A (ja) * | 2006-03-22 | 2007-10-04 | Osaka Univ | トランジスタ素子及びその製造方法並びに発光素子及びディスプレイ |
| JP2019525461A (ja) * | 2016-07-07 | 2019-09-05 | アモルフィックス・インコーポレイテッド | アモルファス金属ホットエレクトロントランジスタ |
| US10651255B2 (en) | 2017-07-27 | 2020-05-12 | Samsung Electronics Co. Ltd. | Thin film transistor and method of manufacturing the same |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2608267B1 (fr) * | 2011-12-23 | 2019-02-27 | IHP GmbH-Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik | Transistor de type p avec une base en graphène |
| JP6230593B2 (ja) * | 2012-04-04 | 2017-11-15 | フォルシュングスツェントルム・ユーリッヒ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング | 再現可能なステップエッジ型ジョセフソン接合 |
| US9553163B2 (en) | 2012-04-19 | 2017-01-24 | Carnegie Mellon University | Metal-semiconductor-metal (MSM) heterojunction diode |
| WO2014039550A1 (fr) * | 2012-09-04 | 2014-03-13 | Carnegie Mellon University | Transistor à électrons chauds ayant des bornes en métal |
| EP3039723B1 (fr) * | 2013-08-27 | 2024-07-03 | Georgia State University Research Foundation, Inc. | Photodétecteur à porteurs chauds accordable |
| US9112130B2 (en) * | 2013-11-01 | 2015-08-18 | Samsung Electronics Co., Ltd. | Quantum interference based logic devices including electron monochromator |
| JP2021175027A (ja) * | 2020-04-21 | 2021-11-01 | 株式会社村田製作所 | 電力増幅器、電力増幅回路、電力増幅デバイス |
| CN115389891B (zh) * | 2022-07-26 | 2023-07-25 | 安庆师范大学 | 一种检测分子半导体材料中电学输运带隙的方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2228617A (en) * | 1989-02-27 | 1990-08-29 | Philips Electronic Associated | A method of manufacturing a semiconductor device having a mesa structure |
-
2005
- 2005-04-25 JP JP2007510882A patent/JP2007535178A/ja active Pending
- 2005-04-25 WO PCT/US2005/014249 patent/WO2005106927A2/fr active Application Filing
- 2005-04-25 KR KR1020067023210A patent/KR20070053160A/ko not_active Application Discontinuation
- 2005-04-25 EP EP05739776A patent/EP1743379A2/fr not_active Withdrawn
- 2005-04-25 CN CNA200580013289XA patent/CN101015066A/zh active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007258308A (ja) * | 2006-03-22 | 2007-10-04 | Osaka Univ | トランジスタ素子及びその製造方法並びに発光素子及びディスプレイ |
| JP2019525461A (ja) * | 2016-07-07 | 2019-09-05 | アモルフィックス・インコーポレイテッド | アモルファス金属ホットエレクトロントランジスタ |
| JP7068265B2 (ja) | 2016-07-07 | 2022-05-16 | アモルフィックス・インコーポレイテッド | アモルファス金属ホットエレクトロントランジスタ |
| US10651255B2 (en) | 2017-07-27 | 2020-05-12 | Samsung Electronics Co. Ltd. | Thin film transistor and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2005106927A2 (fr) | 2005-11-10 |
| CN101015066A (zh) | 2007-08-08 |
| KR20070053160A (ko) | 2007-05-23 |
| WO2005106927A3 (fr) | 2005-12-29 |
| EP1743379A2 (fr) | 2007-01-17 |
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