JP2007535169A5 - - Google Patents

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Publication number
JP2007535169A5
JP2007535169A5 JP2007510718A JP2007510718A JP2007535169A5 JP 2007535169 A5 JP2007535169 A5 JP 2007535169A5 JP 2007510718 A JP2007510718 A JP 2007510718A JP 2007510718 A JP2007510718 A JP 2007510718A JP 2007535169 A5 JP2007535169 A5 JP 2007535169A5
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JP
Japan
Prior art keywords
dry cleaning
processing system
cleaning process
plasma processing
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2007510718A
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English (en)
Japanese (ja)
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JP2007535169A (ja
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Publication date
Priority claimed from US10/834,370 external-priority patent/US20050241669A1/en
Application filed filed Critical
Publication of JP2007535169A publication Critical patent/JP2007535169A/ja
Publication of JP2007535169A5 publication Critical patent/JP2007535169A5/ja
Withdrawn legal-status Critical Current

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JP2007510718A 2004-04-29 2005-02-17 処理チャンバを乾式洗浄する方法およびシステム Withdrawn JP2007535169A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/834,370 US20050241669A1 (en) 2004-04-29 2004-04-29 Method and system of dry cleaning a processing chamber
PCT/US2005/005208 WO2005111265A1 (en) 2004-04-29 2005-02-17 Method and system of dry cleaning a processing chamber

Publications (2)

Publication Number Publication Date
JP2007535169A JP2007535169A (ja) 2007-11-29
JP2007535169A5 true JP2007535169A5 (https=) 2008-02-28

Family

ID=34961726

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007510718A Withdrawn JP2007535169A (ja) 2004-04-29 2005-02-17 処理チャンバを乾式洗浄する方法およびシステム

Country Status (4)

Country Link
US (1) US20050241669A1 (https=)
JP (1) JP2007535169A (https=)
TW (1) TWI290743B (https=)
WO (1) WO2005111265A1 (https=)

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US7449416B2 (en) * 2004-09-01 2008-11-11 Axcelis Technologies, Inc. Apparatus and plasma ashing process for increasing photoresist removal rate
US7959984B2 (en) * 2004-12-22 2011-06-14 Lam Research Corporation Methods and arrangement for the reduction of byproduct deposition in a plasma processing system
US20060218680A1 (en) * 2005-03-28 2006-09-28 Bailey Andrew D Iii Apparatus for servicing a plasma processing system with a robot
JP2007158230A (ja) * 2005-12-08 2007-06-21 Nec Electronics Corp プラズマエッチング装置のクリーニング方法、およびプラズマエッチング装置
US20070234955A1 (en) * 2006-03-29 2007-10-11 Tokyo Electron Limited Method and apparatus for reducing carbon monoxide poisoning at the peripheral edge of a substrate in a thin film deposition system
JP4162094B2 (ja) * 2006-05-30 2008-10-08 三菱重工業株式会社 常温接合によるデバイス、デバイス製造方法ならびに常温接合装置
CN100587902C (zh) 2006-09-15 2010-02-03 北京北方微电子基地设备工艺研究中心有限责任公司 在线预测刻蚀设备维护的方法
TW200930135A (en) * 2007-08-31 2009-07-01 Tokyo Electron Ltd Organic electronic device, organic electronic device manufacturing method, organic electronic device manufacturing apparatus, substrate processing system, protection film structure and storage medium with control program stored therein
JP5688227B2 (ja) * 2010-02-26 2015-03-25 株式会社日立ハイテクノロジーズ エッチング装置、制御シミュレータ、及び半導体装置製造方法
JP5997555B2 (ja) * 2012-09-14 2016-09-28 東京エレクトロン株式会社 エッチング装置およびエッチング方法
CN106414789A (zh) * 2013-11-21 2017-02-15 恩特格里斯公司 用于在等离子体系统中使用的室组件的表面涂层
JP6544902B2 (ja) * 2014-09-18 2019-07-17 東京エレクトロン株式会社 プラズマ処理装置
CN109075066B (zh) * 2016-03-31 2023-08-04 东京毅力科创株式会社 使用无晶片干式清洗发射光谱来控制干式蚀刻过程的方法
US10043641B2 (en) * 2016-09-22 2018-08-07 Applied Materials, Inc. Methods and apparatus for processing chamber cleaning end point detection
KR102520779B1 (ko) 2016-11-18 2023-04-11 도쿄엘렉트론가부시키가이샤 제조 공정에서 입자 유도 아크 검출을 위한 조성 발광 분광법
CN110431655A (zh) 2017-03-17 2019-11-08 东京毅力科创株式会社 用于蚀刻度量改进的表面改性控制
CN109216241B (zh) * 2018-09-04 2021-03-12 上海华力微电子有限公司 一种刻蚀副产物智能自清洁方法
KR102054147B1 (ko) * 2019-10-21 2019-12-12 주식회사 아이엠티 테스트 장치
US12306044B2 (en) 2022-09-20 2025-05-20 Tokyo Electron Limited Optical emission spectroscopy for advanced process characterization
US12158374B2 (en) 2022-10-25 2024-12-03 Tokyo Electron Limited Time-resolved OES data collection
US12362158B2 (en) 2022-10-25 2025-07-15 Tokyo Electron Limited Method for OES data collection and endpoint detection

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JPS59142839A (ja) * 1983-02-01 1984-08-16 Canon Inc 気相法装置のクリ−ニング方法
US4563367A (en) * 1984-05-29 1986-01-07 Applied Materials, Inc. Apparatus and method for high rate deposition and etching
JPH07169693A (ja) * 1993-12-16 1995-07-04 Mitsubishi Electric Corp 横型減圧ｃｖｄ装置及びそのクリーニング方法
JP3193265B2 (ja) * 1995-05-20 2001-07-30 東京エレクトロン株式会社 プラズマエッチング装置
US5846373A (en) * 1996-06-28 1998-12-08 Lam Research Corporation Method for monitoring process endpoints in a plasma chamber and a process monitoring arrangement in a plasma chamber
JP3667893B2 (ja) * 1996-09-24 2005-07-06 川崎マイクロエレクトロニクス株式会社 半導体装置の製造方法
US6443165B1 (en) * 1996-11-14 2002-09-03 Tokyo Electron Limited Method for cleaning plasma treatment device and plasma treatment system
US6274058B1 (en) * 1997-07-11 2001-08-14 Applied Materials, Inc. Remote plasma cleaning method for processing chambers
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WO2002000962A1 (en) * 2000-06-28 2002-01-03 Mks Instruments, Inc. System and method for in-situ cleaning of process monitor of semi-conductor wafer fabricator
JP2002057143A (ja) * 2000-08-07 2002-02-22 Hitachi Ltd 浮遊異物検出装置
US6852242B2 (en) * 2001-02-23 2005-02-08 Zhi-Wen Sun Cleaning of multicompositional etchant residues
US20030005943A1 (en) * 2001-05-04 2003-01-09 Lam Research Corporation High pressure wafer-less auto clean for etch applications
WO2002090615A1 (en) * 2001-05-04 2002-11-14 Lam Research Corporation Duo-step plasma cleaning of chamber residues
TW200410337A (en) * 2002-12-02 2004-06-16 Au Optronics Corp Dry cleaning method for plasma reaction chamber

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