TWI290743B - Method and system of dry cleaning a processing chamber - Google Patents

Method and system of dry cleaning a processing chamber Download PDF

Info

Publication number
TWI290743B
TWI290743B TW094113311A TW94113311A TWI290743B TW I290743 B TWI290743 B TW I290743B TW 094113311 A TW094113311 A TW 094113311A TW 94113311 A TW94113311 A TW 94113311A TW I290743 B TWI290743 B TW I290743B
Authority
TW
Taiwan
Prior art keywords
cleaning
dry cleaning
plasma
processing system
rate
Prior art date
Application number
TW094113311A
Other languages
English (en)
Chinese (zh)
Other versions
TW200540942A (en
Inventor
Norman Wodecki
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200540942A publication Critical patent/TW200540942A/zh
Application granted granted Critical
Publication of TWI290743B publication Critical patent/TWI290743B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853Hygiene
    • H01J37/32862In situ cleaning of vessels and/or internal parts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32935Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963End-point detection

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW094113311A 2004-04-29 2005-04-26 Method and system of dry cleaning a processing chamber TWI290743B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/834,370 US20050241669A1 (en) 2004-04-29 2004-04-29 Method and system of dry cleaning a processing chamber

Publications (2)

Publication Number Publication Date
TW200540942A TW200540942A (en) 2005-12-16
TWI290743B true TWI290743B (en) 2007-12-01

Family

ID=34961726

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094113311A TWI290743B (en) 2004-04-29 2005-04-26 Method and system of dry cleaning a processing chamber

Country Status (4)

Country Link
US (1) US20050241669A1 (https=)
JP (1) JP2007535169A (https=)
TW (1) TWI290743B (https=)
WO (1) WO2005111265A1 (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7449416B2 (en) * 2004-09-01 2008-11-11 Axcelis Technologies, Inc. Apparatus and plasma ashing process for increasing photoresist removal rate
US7959984B2 (en) * 2004-12-22 2011-06-14 Lam Research Corporation Methods and arrangement for the reduction of byproduct deposition in a plasma processing system
US20060218680A1 (en) * 2005-03-28 2006-09-28 Bailey Andrew D Iii Apparatus for servicing a plasma processing system with a robot
JP2007158230A (ja) * 2005-12-08 2007-06-21 Nec Electronics Corp プラズマエッチング装置のクリーニング方法、およびプラズマエッチング装置
US20070234955A1 (en) * 2006-03-29 2007-10-11 Tokyo Electron Limited Method and apparatus for reducing carbon monoxide poisoning at the peripheral edge of a substrate in a thin film deposition system
JP4162094B2 (ja) * 2006-05-30 2008-10-08 三菱重工業株式会社 常温接合によるデバイス、デバイス製造方法ならびに常温接合装置
CN100587902C (zh) 2006-09-15 2010-02-03 北京北方微电子基地设备工艺研究中心有限责任公司 在线预测刻蚀设备维护的方法
TW200930135A (en) * 2007-08-31 2009-07-01 Tokyo Electron Ltd Organic electronic device, organic electronic device manufacturing method, organic electronic device manufacturing apparatus, substrate processing system, protection film structure and storage medium with control program stored therein
JP5688227B2 (ja) * 2010-02-26 2015-03-25 株式会社日立ハイテクノロジーズ エッチング装置、制御シミュレータ、及び半導体装置製造方法
JP5997555B2 (ja) * 2012-09-14 2016-09-28 東京エレクトロン株式会社 エッチング装置およびエッチング方法
CN106414789A (zh) * 2013-11-21 2017-02-15 恩特格里斯公司 用于在等离子体系统中使用的室组件的表面涂层
JP6544902B2 (ja) * 2014-09-18 2019-07-17 東京エレクトロン株式会社 プラズマ処理装置
CN109075066B (zh) * 2016-03-31 2023-08-04 东京毅力科创株式会社 使用无晶片干式清洗发射光谱来控制干式蚀刻过程的方法
US10043641B2 (en) * 2016-09-22 2018-08-07 Applied Materials, Inc. Methods and apparatus for processing chamber cleaning end point detection
KR102520779B1 (ko) 2016-11-18 2023-04-11 도쿄엘렉트론가부시키가이샤 제조 공정에서 입자 유도 아크 검출을 위한 조성 발광 분광법
CN110431655A (zh) 2017-03-17 2019-11-08 东京毅力科创株式会社 用于蚀刻度量改进的表面改性控制
CN109216241B (zh) * 2018-09-04 2021-03-12 上海华力微电子有限公司 一种刻蚀副产物智能自清洁方法
KR102054147B1 (ko) * 2019-10-21 2019-12-12 주식회사 아이엠티 테스트 장치
US12306044B2 (en) 2022-09-20 2025-05-20 Tokyo Electron Limited Optical emission spectroscopy for advanced process characterization
US12158374B2 (en) 2022-10-25 2024-12-03 Tokyo Electron Limited Time-resolved OES data collection
US12362158B2 (en) 2022-10-25 2025-07-15 Tokyo Electron Limited Method for OES data collection and endpoint detection

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59142839A (ja) * 1983-02-01 1984-08-16 Canon Inc 気相法装置のクリ−ニング方法
US4563367A (en) * 1984-05-29 1986-01-07 Applied Materials, Inc. Apparatus and method for high rate deposition and etching
JPH07169693A (ja) * 1993-12-16 1995-07-04 Mitsubishi Electric Corp 横型減圧cvd装置及びそのクリーニング方法
JP3193265B2 (ja) * 1995-05-20 2001-07-30 東京エレクトロン株式会社 プラズマエッチング装置
US5846373A (en) * 1996-06-28 1998-12-08 Lam Research Corporation Method for monitoring process endpoints in a plasma chamber and a process monitoring arrangement in a plasma chamber
JP3667893B2 (ja) * 1996-09-24 2005-07-06 川崎マイクロエレクトロニクス株式会社 半導体装置の製造方法
US6443165B1 (en) * 1996-11-14 2002-09-03 Tokyo Electron Limited Method for cleaning plasma treatment device and plasma treatment system
US6274058B1 (en) * 1997-07-11 2001-08-14 Applied Materials, Inc. Remote plasma cleaning method for processing chambers
US6534007B1 (en) * 1997-08-01 2003-03-18 Applied Komatsu Technology, Inc. Method and apparatus for detecting the endpoint of a chamber cleaning
US6081334A (en) * 1998-04-17 2000-06-27 Applied Materials, Inc Endpoint detection for semiconductor processes
US6254717B1 (en) * 1998-04-23 2001-07-03 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6010967A (en) * 1998-05-22 2000-01-04 Micron Technology, Inc. Plasma etching methods
WO2002000962A1 (en) * 2000-06-28 2002-01-03 Mks Instruments, Inc. System and method for in-situ cleaning of process monitor of semi-conductor wafer fabricator
JP2002057143A (ja) * 2000-08-07 2002-02-22 Hitachi Ltd 浮遊異物検出装置
US6852242B2 (en) * 2001-02-23 2005-02-08 Zhi-Wen Sun Cleaning of multicompositional etchant residues
US20030005943A1 (en) * 2001-05-04 2003-01-09 Lam Research Corporation High pressure wafer-less auto clean for etch applications
WO2002090615A1 (en) * 2001-05-04 2002-11-14 Lam Research Corporation Duo-step plasma cleaning of chamber residues
TW200410337A (en) * 2002-12-02 2004-06-16 Au Optronics Corp Dry cleaning method for plasma reaction chamber

Also Published As

Publication number Publication date
JP2007535169A (ja) 2007-11-29
TW200540942A (en) 2005-12-16
US20050241669A1 (en) 2005-11-03
WO2005111265A1 (en) 2005-11-24

Similar Documents

Publication Publication Date Title
TWI290743B (en) Method and system of dry cleaning a processing chamber
JP4563584B2 (ja) プラズマ・エッチング工程の精度を改善する方法および装置
TWI375990B (en) Mask etch plasma reactor with cathode providing a uniform distribution of etch rate
JP6033453B2 (ja) 多変量解析を用いたプラズマエンドポイント検出
JP5468113B2 (ja) シリコンに対する誘電材料の選択エッチング方法及びシステム
KR100704108B1 (ko) 무산소 플라즈마 공정에서의 종점 검출 방법
TW418423B (en) Chamber having improved process monitoring window
TW200841380A (en) Method and apparatus for ashing a substrate using carbon dioxide
TWI310223B (en) Low-pressure removal of photoresist and etch residue
CN100595891C (zh) 用于低k刻蚀后的无损灰化工艺和系统
JP4841507B2 (ja) 基板を処理する装置及び方法
TWI270121B (en) System and method for etching a mask
JP2011249841A (ja) エンドポイントを検出するための方法及び装置
JP2005527983A (ja) データハンドリング、ストレージ及び操作のための方法とシステム
TWI280617B (en) Method and system of determining chamber seasoning condition by optical emission
TW200414346A (en) Method and apparatus for determining an etch property using an endpoint signal
TWI298905B (en) Method and apparatus for bilayer photoresist dry development
TWI295815B (en) Method and system for treating a hard mask to improve etch characteristics
TWI278922B (en) Method and system for etching a film stack
US7033518B2 (en) Method and system for processing multi-layer films
JP2007521665A (ja) 基材からフォトレジストを除去する方法及び装置
CN1479352A (zh) 判定半导体制造工艺状态的方法和装置及半导体制造装置
TW200529320A (en) Method and apparatus for etching an organic layer
KR20070032036A (ko) 플라즈마 프로세싱 시스템에서 종료점을 결정하는 방법 및장치

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees