JP2007525823A - 不規則面を通しての注入方法 - Google Patents
不規則面を通しての注入方法 Download PDFInfo
- Publication number
- JP2007525823A JP2007525823A JP2006518307A JP2006518307A JP2007525823A JP 2007525823 A JP2007525823 A JP 2007525823A JP 2006518307 A JP2006518307 A JP 2006518307A JP 2006518307 A JP2006518307 A JP 2006518307A JP 2007525823 A JP2007525823 A JP 2007525823A
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- layer
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- 238000000034 method Methods 0.000 title claims abstract description 41
- 230000001788 irregular Effects 0.000 title claims description 45
- 238000002347 injection Methods 0.000 title claims description 24
- 239000007924 injection Substances 0.000 title claims description 24
- 238000002513 implantation Methods 0.000 claims abstract description 51
- 239000010410 layer Substances 0.000 claims description 106
- 239000000463 material Substances 0.000 claims description 36
- 239000011247 coating layer Substances 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 20
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 229910003460 diamond Inorganic materials 0.000 claims description 6
- 239000010432 diamond Substances 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 238000004381 surface treatment Methods 0.000 claims description 3
- -1 Si 3 N 4 Inorganic materials 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 22
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 15
- 229910052799 carbon Inorganic materials 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 230000000694 effects Effects 0.000 description 6
- 238000004088 simulation Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Element Separation (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Recrystallisation Techniques (AREA)
- Formation Of Insulating Films (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
Description
ジャン・ピエール・コリン(Jean-Pierre Colinge)著「シリコン・オン・インシュレータ技術:VLSI材料(Silicon-On-Insulator Technology: Material to VLSI)」第2版、クルーワー研究出版(Kluwer Academic Publishers)、第50〜51頁
・表面250に支持基板をボンディングする工程
・ゾーン23で基板21を分離する工程
・付加的に分離によってゾーン23に形成された面を表面処理する工程
・層21は単結晶シリコンの特性を有している。
・層22は炭素(ダイアモンドに対応する)の特性を有し、不規則面を有する層に対応している。
・層25は次の2つの層からなっている。
・炭素層22の不規則面(この層の不規則性は図3の各シミュレーションにおける種々の炭素層厚みに対応している)上に形成されたシリコン層
・上記シリコン層を被覆しているSiO2層
・例1と例2を比較すると、炭素層の厚さの差が1000Å(100nm)で注入深さに1623Å(162.3nm)の差が生じている。
・例3と例4を比較すると、炭素層の厚さの差が1000Å(100nm)で注入深さに1482Å(148.2nm)の差が生じている。
・例2と例3を比較すると、炭素層22の厚さの差が1000Å(100nm)であるのに注入深さの差は僅か410Å(41nm)である。この例2と例3の比較は、被覆層25の一部を構成しているシリコン層が、このシリコン層を被覆するSiO2層の形成前に平坦化されている状態に対応している。従って例2と例3の比較は、このような平坦化の利点を示している。
・SiO2
・Si
・ゲルマニウム
・炭素(ダイアモンド)
・酸化アルミニウム
Claims (13)
- 凹凸不規則面を有する少なくとも1つの層を備えたウエハ内に前記不規則面を通して原子種を注入する方法において、原子種の注入により脆弱ゾーンとなる注入原子種の最大濃度ゾーンをウエハ内に形成するに際し、原子種の注入に先立ち、注入深さの均一性を向上させるために前記不規則面を被覆層で被覆する被覆工程を備えたことを特徴とする注入方法。
- 前記ウエハが多層ウエハであり、該多層ウエハが少なくとも1つの基板と不規則面を有する層とを含んでいることを特徴とする請求項1に記載の方法。
- 不規則面を有する層を通して原子種の注入を実行することを特徴とする請求項1又は2に記載の方法。
- 被覆層を不規則面上に形成することを特徴とする請求項1〜3のいずれか1項に記載の方法。
- 注入深さの均一性が向上するように被覆層の材質を選択することを特徴とする請求項1〜4のいずれか1項に記載の方法。
- 不規則面を有する層の材料の注入深さ係数と被覆層を構成する材料の注入深さ係数との差が最小となるように被覆層の材質を選択することを特徴とする請求項1〜5のいずれか1項に記載の方法。
- 被覆工程中に被覆層が平滑面となるように被覆層を形成することを特徴とする請求項1〜6のいずれか1項に記載の方法。
- 被覆工程中に被覆層の表面処理を実行することを特徴とする請求項1〜7のいずれか1項に記載の方法。
- 被覆工程中に被覆層の平坦化処理を実行することを特徴とする請求項1〜8のいずれか1項に記載の方法。
- 被覆工程中に被覆層の研磨処理を施すことを特徴とする請求項1〜9のいずれか1項に記載の方法。
- 水素及び/又はヘリウムを注入することを特徴とする請求項1〜10のいずれか1項に記載の方法。
- 注入工程の後にスマートカット(Smartcut:登録商標)法を実行することを特徴とする請求項1〜11のいずれか1項に記載の方法。
- 不規則面を有する層を構成する材料が、ダイアモンド、Si3N4、AlN、又は多結晶シリコンからなることを特徴とする請求項1〜12のいずれか1項に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0308462A FR2857503B1 (fr) | 2003-07-10 | 2003-07-10 | Procede d'implantation au travers d'une surface irreguliere |
PCT/FR2004/001826 WO2005008756A1 (fr) | 2003-07-10 | 2004-07-12 | Procede d’implantation au travers d’une surface irreguliere |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007525823A true JP2007525823A (ja) | 2007-09-06 |
JP4381416B2 JP4381416B2 (ja) | 2009-12-09 |
Family
ID=33522937
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006518307A Expired - Lifetime JP4381416B2 (ja) | 2003-07-10 | 2004-07-12 | 不規則面を通しての注入方法 |
Country Status (9)
Country | Link |
---|---|
US (2) | US7018913B2 (ja) |
EP (1) | EP1644969B1 (ja) |
JP (1) | JP4381416B2 (ja) |
KR (1) | KR100751628B1 (ja) |
CN (1) | CN100419961C (ja) |
AT (1) | ATE467904T1 (ja) |
DE (1) | DE602004027138D1 (ja) |
FR (1) | FR2857503B1 (ja) |
WO (1) | WO2005008756A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011524641A (ja) * | 2008-06-20 | 2011-09-01 | 天錫 李 | 薄膜製造方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1858071A1 (en) * | 2006-05-18 | 2007-11-21 | S.O.I.TEC. Silicon on Insulator Technologies S.A. | Method for fabricating a semiconductor on insulator type wafer and semiconductor on insulator wafer |
US9070709B2 (en) | 2011-06-09 | 2015-06-30 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Method for producing a field effect transistor with implantation through the spacers |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04168764A (ja) * | 1990-11-01 | 1992-06-16 | Nec Yamagata Ltd | 半導体装置の製造方法 |
EP0799495A4 (en) * | 1994-11-10 | 1999-11-03 | Lawrence Semiconductor Researc | SILICON-GERMANIUM-CARBON COMPOSITIONS AND RELATED PROCESSES |
SG67458A1 (en) * | 1996-12-18 | 1999-09-21 | Canon Kk | Process for producing semiconductor article |
JP2967745B2 (ja) * | 1997-02-06 | 1999-10-25 | 日本電気株式会社 | 半導体装置の製造方法 |
US6326279B1 (en) * | 1999-03-26 | 2001-12-04 | Canon Kabushiki Kaisha | Process for producing semiconductor article |
FR2817395B1 (fr) * | 2000-11-27 | 2003-10-31 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede |
-
2003
- 2003-07-10 FR FR0308462A patent/FR2857503B1/fr not_active Expired - Fee Related
-
2004
- 2004-05-05 US US10/840,599 patent/US7018913B2/en not_active Expired - Lifetime
- 2004-07-12 WO PCT/FR2004/001826 patent/WO2005008756A1/fr active Search and Examination
- 2004-07-12 AT AT04767657T patent/ATE467904T1/de not_active IP Right Cessation
- 2004-07-12 EP EP04767657A patent/EP1644969B1/fr not_active Expired - Lifetime
- 2004-07-12 JP JP2006518307A patent/JP4381416B2/ja not_active Expired - Lifetime
- 2004-07-12 KR KR1020067000528A patent/KR100751628B1/ko active IP Right Grant
- 2004-07-12 CN CNB2004800197230A patent/CN100419961C/zh not_active Expired - Fee Related
- 2004-07-12 DE DE602004027138T patent/DE602004027138D1/de not_active Expired - Lifetime
-
2005
- 2005-10-31 US US11/261,785 patent/US7265435B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011524641A (ja) * | 2008-06-20 | 2011-09-01 | 天錫 李 | 薄膜製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP4381416B2 (ja) | 2009-12-09 |
US7018913B2 (en) | 2006-03-28 |
CN100419961C (zh) | 2008-09-17 |
FR2857503A1 (fr) | 2005-01-14 |
DE602004027138D1 (de) | 2010-06-24 |
WO2005008756A1 (fr) | 2005-01-27 |
CN1820354A (zh) | 2006-08-16 |
KR20060029684A (ko) | 2006-04-06 |
FR2857503B1 (fr) | 2005-11-11 |
ATE467904T1 (de) | 2010-05-15 |
US20060051944A1 (en) | 2006-03-09 |
US20050009348A1 (en) | 2005-01-13 |
EP1644969B1 (fr) | 2010-05-12 |
US7265435B2 (en) | 2007-09-04 |
EP1644969A1 (fr) | 2006-04-12 |
KR100751628B1 (ko) | 2007-08-22 |
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