JP2007521614A - 膨張熱プラズマを誘導結合するシステム及び方法 - Google Patents
膨張熱プラズマを誘導結合するシステム及び方法 Download PDFInfo
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- JP2007521614A JP2007521614A JP2006517245A JP2006517245A JP2007521614A JP 2007521614 A JP2007521614 A JP 2007521614A JP 2006517245 A JP2006517245 A JP 2006517245A JP 2006517245 A JP2006517245 A JP 2006517245A JP 2007521614 A JP2007521614 A JP 2007521614A
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- plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Cleaning In General (AREA)
Abstract
【選択図】 図3
Description
Claims (10)
- プラズマ生成システム(300)であって、
熱プラズマを生成するプラズマ生成装置(316)を備え、
プラズマ生成装置(316)の外部のプラズマ処理チャンバ(318)が、プラズマ生成装置(316)から熱プラズマを受け取り、且つプラズマ処理チャンバ(318)内で熱プラズマを膨張させるためにプラズマ生成中にプラズマ処理チャンバ(318)をプラズマ生成装置(316)よりも低い圧力に維持するものであり、さらに、
熱プラズマを誘導結合する誘導子システム(330、332、333)を備える、プラズマ生成システム(300)。 - 膨張誘導結合プラズマ(350)が、基板(320)の表面を1以上の皮膜(334)で覆うためにプラズマ処理チャンバ(318)内の表面の方に向けて送られる、請求項1記載のシステム。
- 誘導子システム(330、332、333)が、熱プラズマに近接した1以上の電気コイル(330)及び1以上のコイル(330)を付勢する電源(332、333)を含む、請求項1記載のシステム。
- 1以上の電気コイル(330)が、特定の構成でプラズマ処理チャンバ(318)内に位置し、基板(320)の表面の1以上の皮膜(334)に特定の構成に対応した特定の堆積プロファイルを生成する、請求項3記載のシステム。
- 1以上の電気コイル(330)の特定の構成が、実質的な環状構成である、請求項4記載のシステム。
- 膨張誘導結合プラズマ(350)が、エッチング、粗面化、加熱、洗浄、及び表面への皮膜塗布から成る処理のグループから選択された処理のために表面を処理するように使用される、請求項1記載のシステム。
- プラズマ処理チャンバ(318)が、電子衝撃解離経路及び解離再結合経路に沿った解離のために、膨張誘導結合熱プラズマ(350)と反応する試薬を受け取るポート(326)をさらに備える、請求項1記載のシステム。
- プラズマ生成システム(300)であって、
プラズマを生成する装置(316)と、
生成プラズマを受け取り、且つ生成プラズマの膨張を可能にする装置(318)と、
生成プラズマを誘導結合する装置(330、332、333)と、を備え、
受け取る装置(318)及び誘導結合する装置(330、332、333)が共働して、生成プラズマを膨張誘導結合プラズマ(350)に作り上げる、プラズマ生成システム(300)。 - 生成プラズマを誘導結合する装置(330、332、333)が、生成プラズマに近接した1以上の電気コイル(330)を含む、請求項8記載のシステム。
- 生成プラズマが、熱プラズマである、請求項8記載のシステム。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/609,958 US6969953B2 (en) | 2003-06-30 | 2003-06-30 | System and method for inductive coupling of an expanding thermal plasma |
PCT/US2004/018820 WO2005006386A2 (en) | 2003-06-30 | 2004-06-14 | System and method for inductive coupling of an expanding thermal plasma |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2007521614A true JP2007521614A (ja) | 2007-08-02 |
Family
ID=33540988
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006517245A Pending JP2007521614A (ja) | 2003-06-30 | 2004-06-14 | 膨張熱プラズマを誘導結合するシステム及び方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6969953B2 (ja) |
EP (1) | EP1642314A2 (ja) |
JP (1) | JP2007521614A (ja) |
KR (1) | KR20060082400A (ja) |
CN (1) | CN100517553C (ja) |
WO (1) | WO2005006386A2 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3940095B2 (ja) * | 2003-05-08 | 2007-07-04 | 忠弘 大見 | 基板処理装置 |
US9659758B2 (en) | 2005-03-22 | 2017-05-23 | Honeywell International Inc. | Coils utilized in vapor deposition applications and methods of production |
JP5222940B2 (ja) * | 2007-05-01 | 2013-06-26 | エグザテック・リミテッド・ライアビリティー・カンパニー | プラズマコーティングのエッジヒーリング及び現場修復 |
US20100183825A1 (en) * | 2008-12-31 | 2010-07-22 | Cambridge Nanotech Inc. | Plasma atomic layer deposition system and method |
WO2013004439A1 (de) * | 2011-07-01 | 2013-01-10 | Reinhausen Plasma Gmbh | Vorrichtung und verfahren zur plasmabehandlung von oberflächen |
CN103117201B (zh) * | 2011-11-17 | 2016-06-29 | 中芯国际集成电路制造(上海)有限公司 | Pecvd装置及半导体器件的形成方法 |
US11183373B2 (en) | 2017-10-11 | 2021-11-23 | Honeywell International Inc. | Multi-patterned sputter traps and methods of making |
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JPH05266991A (ja) * | 1992-03-16 | 1993-10-15 | Nippon Steel Corp | 磁気駆動プラズマ反応装置 |
JPH0790556A (ja) * | 1993-09-21 | 1995-04-04 | Jeol Ltd | 高周波誘導プラズマ成膜装置 |
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WO2002062114A1 (de) * | 2001-02-02 | 2002-08-08 | Robert Bosch Gmbh | Plasmaanlage und verfahren zur erzeugung einer funktionsbeschichtung |
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WO2003041146A1 (en) * | 2001-11-07 | 2003-05-15 | Rapt Industries Inc. | Apparatus and method for reactive atom plasma processing for material deposition |
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-
2003
- 2003-06-30 US US10/609,958 patent/US6969953B2/en not_active Expired - Lifetime
-
2004
- 2004-06-14 WO PCT/US2004/018820 patent/WO2005006386A2/en active Application Filing
- 2004-06-14 JP JP2006517245A patent/JP2007521614A/ja active Pending
- 2004-06-14 EP EP04755160A patent/EP1642314A2/en not_active Withdrawn
- 2004-06-14 KR KR1020057025235A patent/KR20060082400A/ko not_active Application Discontinuation
- 2004-06-14 CN CNB2004800158912A patent/CN100517553C/zh not_active Expired - Fee Related
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03211284A (ja) * | 1990-01-17 | 1991-09-17 | Nippon Koshuha Kk | 多段熱プラズマ反応装置 |
JPH05266991A (ja) * | 1992-03-16 | 1993-10-15 | Nippon Steel Corp | 磁気駆動プラズマ反応装置 |
JPH0790556A (ja) * | 1993-09-21 | 1995-04-04 | Jeol Ltd | 高周波誘導プラズマ成膜装置 |
JPH09192479A (ja) * | 1995-11-17 | 1997-07-29 | Toshio Goto | プラズマ処理装置および方法 |
JP2001028298A (ja) * | 1999-04-22 | 2001-01-30 | Applied Materials Inc | 材料処理のための新規なrfプラズマソース |
JP2001118697A (ja) * | 1999-10-18 | 2001-04-27 | Tadahiro Sakuta | 誘導プラズマの発生装置 |
WO2002062114A1 (de) * | 2001-02-02 | 2002-08-08 | Robert Bosch Gmbh | Plasmaanlage und verfahren zur erzeugung einer funktionsbeschichtung |
WO2003018867A1 (en) * | 2001-08-29 | 2003-03-06 | Applied Materials, Inc. | Semiconductor processing using an efficiently coupled gas source |
WO2003041146A1 (en) * | 2001-11-07 | 2003-05-15 | Rapt Industries Inc. | Apparatus and method for reactive atom plasma processing for material deposition |
Also Published As
Publication number | Publication date |
---|---|
WO2005006386A3 (en) | 2005-02-24 |
KR20060082400A (ko) | 2006-07-18 |
EP1642314A2 (en) | 2006-04-05 |
WO2005006386A2 (en) | 2005-01-20 |
CN1802723A (zh) | 2006-07-12 |
CN100517553C (zh) | 2009-07-22 |
US20040263083A1 (en) | 2004-12-30 |
US6969953B2 (en) | 2005-11-29 |
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