JP2007507897A5 - - Google Patents

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Publication number
JP2007507897A5
JP2007507897A5 JP2006534012A JP2006534012A JP2007507897A5 JP 2007507897 A5 JP2007507897 A5 JP 2007507897A5 JP 2006534012 A JP2006534012 A JP 2006534012A JP 2006534012 A JP2006534012 A JP 2006534012A JP 2007507897 A5 JP2007507897 A5 JP 2007507897A5
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JP
Japan
Prior art keywords
substrate
annealing
image
radiation beam
preheating
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Application number
JP2006534012A
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English (en)
Japanese (ja)
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JP5517396B2 (ja
JP2007507897A (ja
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Publication date
Priority claimed from US10/674,106 external-priority patent/US7148159B2/en
Application filed filed Critical
Publication of JP2007507897A publication Critical patent/JP2007507897A/ja
Publication of JP2007507897A5 publication Critical patent/JP2007507897A5/ja
Application granted granted Critical
Publication of JP5517396B2 publication Critical patent/JP5517396B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2006534012A 2003-09-29 2004-09-28 低濃度ドープシリコン基板のレーザー熱アニール Expired - Fee Related JP5517396B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/674,106 US7148159B2 (en) 2003-09-29 2003-09-29 Laser thermal annealing of lightly doped silicon substrates
US10/674,106 2003-09-29
PCT/US2004/031783 WO2005043696A2 (en) 2003-09-29 2004-09-28 Laser thermal annealing of lightly doped silicon substrates

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012143310A Division JP2012231158A (ja) 2003-09-29 2012-06-26 低濃度ドープシリコン基板のレーザー熱アニール

Publications (3)

Publication Number Publication Date
JP2007507897A JP2007507897A (ja) 2007-03-29
JP2007507897A5 true JP2007507897A5 (enExample) 2009-01-29
JP5517396B2 JP5517396B2 (ja) 2014-06-11

Family

ID=34376795

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2006534012A Expired - Fee Related JP5517396B2 (ja) 2003-09-29 2004-09-28 低濃度ドープシリコン基板のレーザー熱アニール
JP2012143310A Pending JP2012231158A (ja) 2003-09-29 2012-06-26 低濃度ドープシリコン基板のレーザー熱アニール

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2012143310A Pending JP2012231158A (ja) 2003-09-29 2012-06-26 低濃度ドープシリコン基板のレーザー熱アニール

Country Status (4)

Country Link
US (2) US7148159B2 (enExample)
JP (2) JP5517396B2 (enExample)
TW (1) TWI246119B (enExample)
WO (1) WO2005043696A2 (enExample)

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