JP2007506992A5 - - Google Patents
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- Publication number
- JP2007506992A5 JP2007506992A5 JP2006517991A JP2006517991A JP2007506992A5 JP 2007506992 A5 JP2007506992 A5 JP 2007506992A5 JP 2006517991 A JP2006517991 A JP 2006517991A JP 2006517991 A JP2006517991 A JP 2006517991A JP 2007506992 A5 JP2007506992 A5 JP 2007506992A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/609,735 US20040265733A1 (en) | 2003-06-30 | 2003-06-30 | Photoacid generators |
| PCT/EP2004/006073 WO2005003858A2 (en) | 2003-06-30 | 2004-06-04 | Compositions comprising photoacid generators |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007506992A JP2007506992A (ja) | 2007-03-22 |
| JP2007506992A5 true JP2007506992A5 (https=) | 2007-08-09 |
Family
ID=33540896
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006517991A Pending JP2007506992A (ja) | 2003-06-30 | 2004-06-04 | 光酸発生剤を含む組成物 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20040265733A1 (https=) |
| EP (1) | EP1642172A2 (https=) |
| JP (1) | JP2007506992A (https=) |
| KR (1) | KR20060025175A (https=) |
| TW (1) | TW200516344A (https=) |
| WO (1) | WO2005003858A2 (https=) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7820369B2 (en) * | 2003-12-04 | 2010-10-26 | International Business Machines Corporation | Method for patterning a low activation energy photoresist |
| US7473512B2 (en) * | 2004-03-09 | 2009-01-06 | Az Electronic Materials Usa Corp. | Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof |
| JP2006078760A (ja) * | 2004-09-09 | 2006-03-23 | Tokyo Ohka Kogyo Co Ltd | 電子線またはｅｕｖ（極端紫外光）用レジスト組成物及びレジストパターン形成方法 |
| JP4505357B2 (ja) * | 2005-03-16 | 2010-07-21 | 富士フイルム株式会社 | 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法 |
| US7723008B2 (en) * | 2005-03-22 | 2010-05-25 | Intel Corporation | Photoactive adhesion promoter in a slam |
| JP4724465B2 (ja) | 2005-05-23 | 2011-07-13 | 富士フイルム株式会社 | 感光性組成物及び該感光性組成物を用いたパターン形成方法 |
| US7255970B2 (en) * | 2005-07-12 | 2007-08-14 | Az Electronic Materials Usa Corp. | Photoresist composition for imaging thick films |
| US20070105040A1 (en) * | 2005-11-10 | 2007-05-10 | Toukhy Medhat A | Developable undercoating composition for thick photoresist layers |
| US20070117041A1 (en) * | 2005-11-22 | 2007-05-24 | Christoph Noelscher | Photosensitive coating for enhancing a contrast of a photolithographic exposure |
| JP4792299B2 (ja) * | 2006-02-07 | 2011-10-12 | 富士フイルム株式会社 | 新規なスルホニウム化合物、該化合物を含有する感光性組成物及び該感光性組成物を用いたパターン形成方法 |
| US7601482B2 (en) * | 2006-03-28 | 2009-10-13 | Az Electronic Materials Usa Corp. | Negative photoresist compositions |
| US7476492B2 (en) * | 2006-05-26 | 2009-01-13 | International Business Machines Corporation | Low activation energy photoresist composition and process for its use |
| JP2007316507A (ja) * | 2006-05-29 | 2007-12-06 | Tokyo Ohka Kogyo Co Ltd | 液浸露光用レジスト組成物およびレジストパターン形成方法 |
| US7488568B2 (en) * | 2007-04-09 | 2009-02-10 | Tokyo Ohka Kogyo Co., Ltd. | Resist composition, method of forming resist pattern, compound and acid generator |
| JP2010134126A (ja) * | 2008-12-03 | 2010-06-17 | Jsr Corp | 感放射線性組樹脂組成物 |
| JP4820914B2 (ja) * | 2010-09-24 | 2011-11-24 | 富士フイルム株式会社 | 感光性組成物及び該感光性組成物を用いたパターン形成方法 |
| JP6049250B2 (ja) * | 2010-11-30 | 2016-12-21 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ | 光酸発生剤 |
| US8906594B2 (en) | 2012-06-15 | 2014-12-09 | Az Electronic Materials (Luxembourg) S.A.R.L. | Negative-working thick film photoresist |
| US9012126B2 (en) | 2012-06-15 | 2015-04-21 | Az Electronic Materials (Luxembourg) S.A.R.L. | Positive photosensitive material |
| JP6209035B2 (ja) * | 2013-09-25 | 2017-10-04 | 旭化成株式会社 | 感光性樹脂組成物、硬化レリーフパターンの製造方法、及び半導体装置の製造方法 |
| US10775697B2 (en) * | 2014-04-22 | 2020-09-15 | Zeon Corporation | Radiation-sensitive resin composition, resin film, and electronic device |
| CN106032369A (zh) * | 2014-12-31 | 2016-10-19 | 浙江九洲药业股份有限公司 | 卤代s-(全氟烷基)-二苯并噻吩盐及其制备方法 |
| TWI731961B (zh) | 2016-04-19 | 2021-07-01 | 德商馬克專利公司 | 正向感光材料及形成正向凸紋影像之方法 |
| KR102261808B1 (ko) | 2016-08-09 | 2021-06-07 | 리지필드 액퀴지션 | 환경적으로 안정한 후막성 화학증폭형 레지스트 |
| EP3761117A4 (en) * | 2018-03-27 | 2021-05-12 | Tokyo Ohka Kogyo Co., Ltd. | METHOD OF MANUFACTURING A PLATED SHAPED BODY |
| EP3847506A1 (en) | 2018-09-05 | 2021-07-14 | Merck Patent GmbH | Positive working photosensitive material |
| FR3120871B1 (fr) * | 2021-03-17 | 2024-04-19 | Bostik Sa | Composition à base de monomères (méth)acrylate |
| WO2022195221A1 (fr) * | 2021-03-17 | 2022-09-22 | Bostik Sa | Composition a base de monomeres (meth)acrylate |
| US20230236507A1 (en) * | 2022-01-26 | 2023-07-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing semiconductor structure and photoresist composition |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4387222A (en) * | 1981-01-30 | 1983-06-07 | Minnesota Mining And Manufacturing Company | Cyclic perfluoroaliphaticdisulfonimides |
| FR2527602A1 (fr) * | 1982-06-01 | 1983-12-02 | Anvar | Bis perhalogenoacyl- ou sulfonyl- imidures de metaux alcalins, leurs solutions solides avec des matieres plastiques et leur application a la constitution d'elements conducteurs pour des generateurs electrochimiques |
| FR2606217B1 (fr) * | 1986-10-30 | 1990-12-14 | Elf Aquitaine | Nouveau materiau a conduction ionique constitue par un sel en solution dans un electrolyte liquide |
| US5162177A (en) * | 1986-10-30 | 1992-11-10 | Hydro-Quebec | Ion conductive material composed of a salt in solution in a liquid electrolyte |
| US5066795A (en) * | 1989-02-10 | 1991-11-19 | Sagami Chemical Research Center | Perfluoroalkyl-containing compound |
| FR2645533B1 (fr) * | 1989-04-06 | 1991-07-12 | Centre Nat Rech Scient | Procede de synthese de sulfonylimidures |
| US5273840A (en) * | 1990-08-01 | 1993-12-28 | Covalent Associates Incorporated | Methide salts, formulations, electrolytes and batteries formed therefrom |
| WO1994024122A1 (fr) * | 1993-04-14 | 1994-10-27 | Daikin Industries, Ltd. | Sulfonate de (haloalkyl)dibenzo-onium, son procede de production, et agent et procede d'haloalkylation |
| US5554664A (en) * | 1995-03-06 | 1996-09-10 | Minnesota Mining And Manufacturing Company | Energy-activatable salts with fluorocarbon anions |
| JPH0954437A (ja) * | 1995-06-05 | 1997-02-25 | Fuji Photo Film Co Ltd | 化学増幅型ポジレジスト組成物 |
| JP3607432B2 (ja) * | 1995-10-12 | 2005-01-05 | 株式会社東芝 | 感光性組成物 |
| US5863699A (en) * | 1995-10-12 | 1999-01-26 | Kabushiki Kaisha Toshiba | Photo-sensitive composition |
| US6280897B1 (en) * | 1996-12-24 | 2001-08-28 | Kabushiki Kaisha Toshiba | Photosensitive composition, method for forming pattern using the same, and method for manufacturing electronic parts |
| JP3431481B2 (ja) * | 1996-12-24 | 2003-07-28 | 株式会社東芝 | 感光性組成物、およびこれを用いたパターン形成方法ならびに電子部品の製造方法 |
| EP0877293B1 (en) * | 1997-05-09 | 2004-01-14 | Fuji Photo Film Co., Ltd. | Positive photosensitive composition |
| KR20040004429A (ko) * | 2000-11-09 | 2004-01-13 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 미세리쏘그래피용 포토레지스트 조성물의 광산 발생제 |
| US6696216B2 (en) * | 2001-06-29 | 2004-02-24 | International Business Machines Corporation | Thiophene-containing photo acid generators for photolithography |
-
2003
- 2003-06-30 US US10/609,735 patent/US20040265733A1/en not_active Abandoned
-
2004
- 2004-05-28 TW TW093115392A patent/TW200516344A/zh unknown
- 2004-06-04 KR KR1020057024067A patent/KR20060025175A/ko not_active Withdrawn
- 2004-06-04 EP EP04736053A patent/EP1642172A2/en not_active Withdrawn
- 2004-06-04 WO PCT/EP2004/006073 patent/WO2005003858A2/en not_active Ceased
- 2004-06-04 JP JP2006517991A patent/JP2007506992A/ja active Pending