JP2007505451A - 直線プラズマ放電開口部を有するｅｃｒプラズマ源 - Google Patents

直線プラズマ放電開口部を有するｅｃｒプラズマ源 Download PDF

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Publication number
JP2007505451A
JP2007505451A JP2006525621A JP2006525621A JP2007505451A JP 2007505451 A JP2007505451 A JP 2007505451A JP 2006525621 A JP2006525621 A JP 2006525621A JP 2006525621 A JP2006525621 A JP 2006525621A JP 2007505451 A JP2007505451 A JP 2007505451A
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Japan
Prior art keywords
plasma
partial
discharge opening
ecr
plasma discharge
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JP2006525621A
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English (en)
Japanese (ja)
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JP2007505451A5 (enExample
Inventor
マイ・ヨアヒム
ロート・ディートマル
Original Assignee
ロート・ウント・ラウ・アクチェンゲゼルシャフト
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Publication of JP2007505451A publication Critical patent/JP2007505451A/ja
Publication of JP2007505451A5 publication Critical patent/JP2007505451A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/02—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma
    • H05H1/16—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied electric and magnetic fields
    • H05H1/18—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied electric and magnetic fields wherein the fields oscillate at very high frequency, e.g. in the microwave range, e.g. using cyclotron resonance

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Particle Accelerators (AREA)
JP2006525621A 2003-09-08 2004-09-08 直線プラズマ放電開口部を有するｅｃｒプラズマ源 Pending JP2007505451A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10341239A DE10341239B4 (de) 2003-09-08 2003-09-08 ECR-Plasmaquelle mit linearer Plasmaaustrittsöffnung
PCT/DE2004/002027 WO2005027595A2 (de) 2003-09-08 2004-09-08 Ecr-plasmaquelle mit linearer plasmaaustrittsöffnung

Publications (2)

Publication Number Publication Date
JP2007505451A true JP2007505451A (ja) 2007-03-08
JP2007505451A5 JP2007505451A5 (enExample) 2011-04-14

Family

ID=34305603

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006525621A Pending JP2007505451A (ja) 2003-09-08 2004-09-08 直線プラズマ放電開口部を有するｅｃｒプラズマ源

Country Status (7)

Country Link
US (1) US20060254521A1 (enExample)
EP (1) EP1665324B1 (enExample)
JP (1) JP2007505451A (enExample)
CN (1) CN100530509C (enExample)
AT (1) ATE352862T1 (enExample)
DE (2) DE10341239B4 (enExample)
WO (1) WO2005027595A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011142125A1 (ja) * 2010-05-13 2011-11-17 パナソニック株式会社 プラズマ処理装置及び方法
JP2012524376A (ja) * 2009-04-16 2012-10-11 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド 幅広リボンビームの生成および制御のための複合型ｉｃｐおよびｅｃｒプラズマ源

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8203199B2 (en) * 2009-12-10 2012-06-19 National Semiconductor Corporation Tie bar and mold cavity bar arrangements for multiple leadframe stack package
FR2995493B1 (fr) 2012-09-11 2014-08-22 Hydromecanique & Frottement Dispositif pour generer un plasma presentant une etendue importante le long d'un axe par resonnance cyclotronique electronique rce a partir d'un milieu gazeux
CN105088196A (zh) * 2015-08-26 2015-11-25 中国科学院等离子体物理研究所 一种大面积、高密度微波等离子体产生装置
EP3309815B1 (de) 2016-10-12 2019-03-20 Meyer Burger (Germany) AG Plasmabehandlungsvorrichtung mit zwei, miteinander gekoppelten mikrowellenplasmaquellen sowie verfahren zum betreiben einer solchen plasmabehandlungsvorrichtung
DE102018127716A1 (de) 2018-11-07 2020-05-07 Meyer Burger (Germany) Gmbh Membranherstellungsanlage
CN117894653A (zh) * 2022-12-19 2024-04-16 广东省新兴激光等离子体技术研究院 引出带状离子束的离子源

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01159937A (ja) * 1987-12-16 1989-06-22 Hitachi Ltd 負イオン源
JPH0225574A (ja) * 1988-07-14 1990-01-29 Canon Inc 堆積膜形成装置
JPH0270063A (ja) * 1988-09-02 1990-03-08 Nippon Telegr & Teleph Corp <Ntt> プラズマ／イオン生成源およびプラズマ／イオン処理装置
JPH02130923A (ja) * 1988-11-11 1990-05-18 Mitsubishi Electric Corp プラズマ反応装置
JPH0322413A (ja) * 1989-06-19 1991-01-30 Matsushita Electric Ind Co Ltd マイクロ波プラズマ源および処理装置
JPH03150377A (ja) * 1989-11-02 1991-06-26 Ricoh Co Ltd プラズマ処理装置
JPH03191068A (ja) * 1989-12-20 1991-08-21 Matsushita Electric Ind Co Ltd マイクロ波プラズマ装置
JPH03263799A (ja) * 1990-03-12 1991-11-25 Fuji Electric Co Ltd プラズマ処理装置ならびにその運転方法
JPH0417675A (ja) * 1990-05-10 1992-01-22 Ricoh Co Ltd Ｅｃｒプラズマｃｖｄ装置
DE19812558A1 (de) * 1998-03-21 1999-09-30 Roth & Rau Oberflaechentechnik Vorrichtung zur Erzeugung linear ausgedehnter ECR-Plasmen

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR920000591B1 (ko) * 1985-10-14 1992-01-16 가부시끼가이샤 한도다이 에네르기 겐뀨소 마이크로파 강화 cvd시스템
JPH0770519B2 (ja) * 1986-02-28 1995-07-31 日本電信電話株式会社 プラズマ処理装置
CN1023239C (zh) * 1988-07-14 1993-12-22 佳能株式会社 利用分别生成的多种活性气体制备大面积沉积膜的装置
DE3923390A1 (de) * 1988-07-14 1990-01-25 Canon Kk Vorrichtung zur bildung eines grossflaechigen aufgedampften films unter verwendung von wenigstens zwei getrennt gebildeten aktivierten gasen
FR2711035B1 (fr) * 1993-10-04 1995-12-29 Plasmion Dispositif et procédé pour former un plasma par application de micro-ondes.
US5466295A (en) * 1993-10-25 1995-11-14 Board Of Regents Acting For The Univ. Of Michigan ECR plasma generation apparatus and methods
DE19603685C1 (de) * 1996-02-02 1997-08-21 Wu Jeng Ming Mikrowellengerät
JPH11214196A (ja) * 1998-01-29 1999-08-06 Mitsubishi Electric Corp プラズマ発生装置
JPH11297673A (ja) * 1998-04-15 1999-10-29 Hitachi Ltd プラズマ処理装置及びクリーニング方法
DE19925493C1 (de) * 1999-06-04 2001-01-18 Fraunhofer Ges Forschung Linear ausgedehnte Anordnung zur großflächigen Mikrowellenbehandlung und zur großflächigen Plasmaerzeugung
SE521904C2 (sv) * 1999-11-26 2003-12-16 Ladislav Bardos Anordning för hybridplasmabehandling
TW521540B (en) * 2001-10-03 2003-02-21 Hau-Ran Ni An ECR plasma reactor system with multiple exciters

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01159937A (ja) * 1987-12-16 1989-06-22 Hitachi Ltd 負イオン源
JPH0225574A (ja) * 1988-07-14 1990-01-29 Canon Inc 堆積膜形成装置
JPH0270063A (ja) * 1988-09-02 1990-03-08 Nippon Telegr & Teleph Corp <Ntt> プラズマ／イオン生成源およびプラズマ／イオン処理装置
JPH02130923A (ja) * 1988-11-11 1990-05-18 Mitsubishi Electric Corp プラズマ反応装置
JPH0322413A (ja) * 1989-06-19 1991-01-30 Matsushita Electric Ind Co Ltd マイクロ波プラズマ源および処理装置
JPH03150377A (ja) * 1989-11-02 1991-06-26 Ricoh Co Ltd プラズマ処理装置
JPH03191068A (ja) * 1989-12-20 1991-08-21 Matsushita Electric Ind Co Ltd マイクロ波プラズマ装置
JPH03263799A (ja) * 1990-03-12 1991-11-25 Fuji Electric Co Ltd プラズマ処理装置ならびにその運転方法
JPH0417675A (ja) * 1990-05-10 1992-01-22 Ricoh Co Ltd Ｅｃｒプラズマｃｖｄ装置
DE19812558A1 (de) * 1998-03-21 1999-09-30 Roth & Rau Oberflaechentechnik Vorrichtung zur Erzeugung linear ausgedehnter ECR-Plasmen

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012524376A (ja) * 2009-04-16 2012-10-11 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド 幅広リボンビームの生成および制御のための複合型ｉｃｐおよびｅｃｒプラズマ源
WO2011142125A1 (ja) * 2010-05-13 2011-11-17 パナソニック株式会社 プラズマ処理装置及び方法
JP4889834B2 (ja) * 2010-05-13 2012-03-07 パナソニック株式会社 プラズマ処理装置及び方法
US8703613B2 (en) 2010-05-13 2014-04-22 Panasonic Corporation Plasma processing apparatus and plasma processing method

Also Published As

Publication number Publication date
CN1849690A (zh) 2006-10-18
CN100530509C (zh) 2009-08-19
DE10341239A1 (de) 2005-04-14
DE10341239B4 (de) 2006-05-24
HK1096490A1 (zh) 2007-06-01
US20060254521A1 (en) 2006-11-16
WO2005027595A3 (de) 2005-06-16
ATE352862T1 (de) 2007-02-15
WO2005027595A2 (de) 2005-03-24
EP1665324A2 (de) 2006-06-07
EP1665324B1 (de) 2007-01-24
DE502004002806D1 (de) 2007-03-15

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