DE10341239B4 - ECR-Plasmaquelle mit linearer Plasmaaustrittsöffnung - Google Patents

ECR-Plasmaquelle mit linearer Plasmaaustrittsöffnung Download PDF

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Publication number
DE10341239B4
DE10341239B4 DE10341239A DE10341239A DE10341239B4 DE 10341239 B4 DE10341239 B4 DE 10341239B4 DE 10341239 A DE10341239 A DE 10341239A DE 10341239 A DE10341239 A DE 10341239A DE 10341239 B4 DE10341239 B4 DE 10341239B4
Authority
DE
Germany
Prior art keywords
plasma
partial
ecr
outlet opening
plasma source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE10341239A
Other languages
German (de)
English (en)
Other versions
DE10341239A1 (de
Inventor
Joachim Mai
Dietmar Dr.-Ing. Roth
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meyer Burger Germany GmbH
Original Assignee
Roth and Rau AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE10341239A priority Critical patent/DE10341239B4/de
Application filed by Roth and Rau AG filed Critical Roth and Rau AG
Priority to HK07103444.9A priority patent/HK1096490B/xx
Priority to AT04786748T priority patent/ATE352862T1/de
Priority to DE502004002806T priority patent/DE502004002806D1/de
Priority to US10/571,161 priority patent/US20060254521A1/en
Priority to JP2006525621A priority patent/JP2007505451A/ja
Priority to PCT/DE2004/002027 priority patent/WO2005027595A2/de
Priority to EP04786748A priority patent/EP1665324B1/de
Priority to CNB2004800257138A priority patent/CN100530509C/zh
Publication of DE10341239A1 publication Critical patent/DE10341239A1/de
Application granted granted Critical
Publication of DE10341239B4 publication Critical patent/DE10341239B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/02—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma
    • H05H1/16—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied electric and magnetic fields
    • H05H1/18—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied electric and magnetic fields wherein the fields oscillate at very high frequency, e.g. in the microwave range, e.g. using cyclotron resonance

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Particle Accelerators (AREA)
DE10341239A 2003-09-08 2003-09-08 ECR-Plasmaquelle mit linearer Plasmaaustrittsöffnung Expired - Fee Related DE10341239B4 (de)

Priority Applications (9)

Application Number Priority Date Filing Date Title
DE10341239A DE10341239B4 (de) 2003-09-08 2003-09-08 ECR-Plasmaquelle mit linearer Plasmaaustrittsöffnung
AT04786748T ATE352862T1 (de) 2003-09-08 2004-09-08 Ecr-plasmaquelle mit linearer plasmaaustrittsöffnung
DE502004002806T DE502004002806D1 (de) 2003-09-08 2004-09-08 Ecr-plasmaquelle mit linearer plasmaaustrittsöffnung
US10/571,161 US20060254521A1 (en) 2003-09-08 2004-09-08 Electron cyclotron resonance (ecr) plasma source having a linear plasma discharge opening
HK07103444.9A HK1096490B (en) 2003-09-08 2004-09-08 Electron cyclotron resonance(ecr) plasma source having a linear plasma discharge opening
JP2006525621A JP2007505451A (ja) 2003-09-08 2004-09-08 直線プラズマ放電開口部を有するｅｃｒプラズマ源
PCT/DE2004/002027 WO2005027595A2 (de) 2003-09-08 2004-09-08 Ecr-plasmaquelle mit linearer plasmaaustrittsöffnung
EP04786748A EP1665324B1 (de) 2003-09-08 2004-09-08 Ecr-plasmaquelle mit linearer plasmaaustrittsöffnung
CNB2004800257138A CN100530509C (zh) 2003-09-08 2004-09-08 具有直线性的等离子体出口的电子回旋共振等离子体源

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10341239A DE10341239B4 (de) 2003-09-08 2003-09-08 ECR-Plasmaquelle mit linearer Plasmaaustrittsöffnung

Publications (2)

Publication Number Publication Date
DE10341239A1 DE10341239A1 (de) 2005-04-14
DE10341239B4 true DE10341239B4 (de) 2006-05-24

Family

ID=34305603

Family Applications (2)

Application Number Title Priority Date Filing Date
DE10341239A Expired - Fee Related DE10341239B4 (de) 2003-09-08 2003-09-08 ECR-Plasmaquelle mit linearer Plasmaaustrittsöffnung
DE502004002806T Expired - Lifetime DE502004002806D1 (de) 2003-09-08 2004-09-08 Ecr-plasmaquelle mit linearer plasmaaustrittsöffnung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE502004002806T Expired - Lifetime DE502004002806D1 (de) 2003-09-08 2004-09-08 Ecr-plasmaquelle mit linearer plasmaaustrittsöffnung

Country Status (7)

Country Link
US (1) US20060254521A1 (enExample)
EP (1) EP1665324B1 (enExample)
JP (1) JP2007505451A (enExample)
CN (1) CN100530509C (enExample)
AT (1) ATE352862T1 (enExample)
DE (2) DE10341239B4 (enExample)
WO (1) WO2005027595A2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7999479B2 (en) * 2009-04-16 2011-08-16 Varian Semiconductor Equipment Associates, Inc. Conjugated ICP and ECR plasma sources for wide ribbon ion beam generation and control
US8203199B2 (en) * 2009-12-10 2012-06-19 National Semiconductor Corporation Tie bar and mold cavity bar arrangements for multiple leadframe stack package
JP4889834B2 (ja) * 2010-05-13 2012-03-07 パナソニック株式会社 プラズマ処理装置及び方法
FR2995493B1 (fr) 2012-09-11 2014-08-22 Hydromecanique & Frottement Dispositif pour generer un plasma presentant une etendue importante le long d'un axe par resonnance cyclotronique electronique rce a partir d'un milieu gazeux
CN105088196A (zh) * 2015-08-26 2015-11-25 中国科学院等离子体物理研究所 一种大面积、高密度微波等离子体产生装置
EP3309815B1 (de) 2016-10-12 2019-03-20 Meyer Burger (Germany) AG Plasmabehandlungsvorrichtung mit zwei, miteinander gekoppelten mikrowellenplasmaquellen sowie verfahren zum betreiben einer solchen plasmabehandlungsvorrichtung
DE102018127716A1 (de) 2018-11-07 2020-05-07 Meyer Burger (Germany) Gmbh Membranherstellungsanlage
CN117894653A (zh) * 2022-12-19 2024-04-16 广东省新兴激光等离子体技术研究院 引出带状离子束的离子源

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995010169A1 (fr) * 1993-10-04 1995-04-13 Plasmion Dispositif et procede pour former un plasma par application de micro-ondes
DE19603685C1 (de) * 1996-02-02 1997-08-21 Wu Jeng Ming Mikrowellengerät
DE19839612A1 (de) * 1998-01-29 1999-08-12 Mitsubishi Electric Corp Plasmaerzeugungsvorrichtung
DE19812558A1 (de) * 1998-03-21 1999-09-30 Roth & Rau Oberflaechentechnik Vorrichtung zur Erzeugung linear ausgedehnter ECR-Plasmen
DE19925493C1 (de) * 1999-06-04 2001-01-18 Fraunhofer Ges Forschung Linear ausgedehnte Anordnung zur großflächigen Mikrowellenbehandlung und zur großflächigen Plasmaerzeugung
WO2001039560A1 (en) * 1999-11-26 2001-05-31 Bardos Ladislav Device for hybrid plasma processing

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR920000591B1 (ko) * 1985-10-14 1992-01-16 가부시끼가이샤 한도다이 에네르기 겐뀨소 마이크로파 강화 cvd시스템
JPH0770519B2 (ja) * 1986-02-28 1995-07-31 日本電信電話株式会社 プラズマ処理装置
JPH01159937A (ja) * 1987-12-16 1989-06-22 Hitachi Ltd 負イオン源
CN1023239C (zh) * 1988-07-14 1993-12-22 佳能株式会社 利用分别生成的多种活性气体制备大面积沉积膜的装置
DE3923390A1 (de) * 1988-07-14 1990-01-25 Canon Kk Vorrichtung zur bildung eines grossflaechigen aufgedampften films unter verwendung von wenigstens zwei getrennt gebildeten aktivierten gasen
JPH0225574A (ja) * 1988-07-14 1990-01-29 Canon Inc 堆積膜形成装置
JPH068510B2 (ja) * 1988-09-02 1994-02-02 日本電信電話株式会社 プラズマ／イオン生成源およびプラズマ／イオン処理装置
JPH07105384B2 (ja) * 1988-11-11 1995-11-13 三菱電機株式会社 プラズマ反応装置
JP2507059B2 (ja) * 1989-06-19 1996-06-12 松下電器産業株式会社 マイクロ波プラズマ源および処理装置
JPH03150377A (ja) * 1989-11-02 1991-06-26 Ricoh Co Ltd プラズマ処理装置
JPH03191068A (ja) * 1989-12-20 1991-08-21 Matsushita Electric Ind Co Ltd マイクロ波プラズマ装置
JP2546405B2 (ja) * 1990-03-12 1996-10-23 富士電機株式会社 プラズマ処理装置ならびにその運転方法
JPH0417675A (ja) * 1990-05-10 1992-01-22 Ricoh Co Ltd Ｅｃｒプラズマｃｖｄ装置
US5466295A (en) * 1993-10-25 1995-11-14 Board Of Regents Acting For The Univ. Of Michigan ECR plasma generation apparatus and methods
JPH11297673A (ja) * 1998-04-15 1999-10-29 Hitachi Ltd プラズマ処理装置及びクリーニング方法
TW521540B (en) * 2001-10-03 2003-02-21 Hau-Ran Ni An ECR plasma reactor system with multiple exciters

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995010169A1 (fr) * 1993-10-04 1995-04-13 Plasmion Dispositif et procede pour former un plasma par application de micro-ondes
DE19603685C1 (de) * 1996-02-02 1997-08-21 Wu Jeng Ming Mikrowellengerät
DE19839612A1 (de) * 1998-01-29 1999-08-12 Mitsubishi Electric Corp Plasmaerzeugungsvorrichtung
DE19812558A1 (de) * 1998-03-21 1999-09-30 Roth & Rau Oberflaechentechnik Vorrichtung zur Erzeugung linear ausgedehnter ECR-Plasmen
DE19925493C1 (de) * 1999-06-04 2001-01-18 Fraunhofer Ges Forschung Linear ausgedehnte Anordnung zur großflächigen Mikrowellenbehandlung und zur großflächigen Plasmaerzeugung
WO2001039560A1 (en) * 1999-11-26 2001-05-31 Bardos Ladislav Device for hybrid plasma processing

Also Published As

Publication number Publication date
CN1849690A (zh) 2006-10-18
CN100530509C (zh) 2009-08-19
DE10341239A1 (de) 2005-04-14
HK1096490A1 (zh) 2007-06-01
US20060254521A1 (en) 2006-11-16
JP2007505451A (ja) 2007-03-08
WO2005027595A3 (de) 2005-06-16
ATE352862T1 (de) 2007-02-15
WO2005027595A2 (de) 2005-03-24
EP1665324A2 (de) 2006-06-07
EP1665324B1 (de) 2007-01-24
DE502004002806D1 (de) 2007-03-15

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee