JP2007500943A - 銅を化学的機械的に平滑化するためのスラリーおよび方法 - Google Patents

銅を化学的機械的に平滑化するためのスラリーおよび方法 Download PDF

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Publication number
JP2007500943A
JP2007500943A JP2006521994A JP2006521994A JP2007500943A JP 2007500943 A JP2007500943 A JP 2007500943A JP 2006521994 A JP2006521994 A JP 2006521994A JP 2006521994 A JP2006521994 A JP 2006521994A JP 2007500943 A JP2007500943 A JP 2007500943A
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JP
Japan
Prior art keywords
slurry
moo
salt
polishing
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006521994A
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English (en)
Japanese (ja)
Other versions
JP2007500943A5 (fr
Inventor
バブ，エス・ヴイ
ヘッジ，シャラス
ジャ，スニル
パトリ，ウダヤ・ビー
ホン，ヤンキ
Original Assignee
クライマックス・エンジニアード・マテリアルズ・エルエルシー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/631,698 external-priority patent/US20050022456A1/en
Application filed by クライマックス・エンジニアード・マテリアルズ・エルエルシー filed Critical クライマックス・エンジニアード・マテリアルズ・エルエルシー
Publication of JP2007500943A publication Critical patent/JP2007500943A/ja
Publication of JP2007500943A5 publication Critical patent/JP2007500943A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2006521994A 2003-07-30 2004-07-27 銅を化学的機械的に平滑化するためのスラリーおよび方法 Pending JP2007500943A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/631,698 US20050022456A1 (en) 2003-07-30 2003-07-30 Polishing slurry and method for chemical-mechanical polishing of copper
US10/846,718 US20050026444A1 (en) 2003-07-30 2004-05-13 Slurry and method for chemical-mechanical planarization of copper
PCT/US2004/024143 WO2005012451A2 (fr) 2003-07-30 2004-07-27 Suspensions aqueuses et procedes pour la planarisation chimico-mecanique du cuivre

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011234230A Division JP2012084895A (ja) 2003-07-30 2011-10-25 銅の化学的機械的平滑化のためのスラリー及び方法

Publications (2)

Publication Number Publication Date
JP2007500943A true JP2007500943A (ja) 2007-01-18
JP2007500943A5 JP2007500943A5 (fr) 2011-04-21

Family

ID=34119220

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006521994A Pending JP2007500943A (ja) 2003-07-30 2004-07-27 銅を化学的機械的に平滑化するためのスラリーおよび方法

Country Status (4)

Country Link
EP (1) EP1648974A4 (fr)
JP (1) JP2007500943A (fr)
KR (1) KR20060118396A (fr)
WO (1) WO2005012451A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011523207A (ja) * 2008-05-23 2011-08-04 キャボット マイクロエレクトロニクス コーポレイション 安定な高濃度ケイ素スラリー

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7186653B2 (en) * 2003-07-30 2007-03-06 Climax Engineered Materials, Llc Polishing slurries and methods for chemical mechanical polishing

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6330321A (ja) * 1986-07-19 1988-02-09 Tokyo Tungsten Co Ltd 二酸化モリブデン粉末及びその製造方法
JPH11204474A (ja) * 1998-01-09 1999-07-30 Sony Corp フッ素を含む膜の研磨方法
JP2000108004A (ja) * 1998-10-07 2000-04-18 Canon Inc 研磨装置
JP2000158331A (ja) * 1997-12-10 2000-06-13 Canon Inc 基板の精密研磨方法および装置
JP2001189295A (ja) * 1999-12-28 2001-07-10 Nec Corp 金属配線形成方法
JP2001237202A (ja) * 2000-12-25 2001-08-31 Nec Corp 半導体装置の製造方法
JP2001342454A (ja) * 2000-06-01 2001-12-14 Hitachi Ltd 研磨剤、研磨方法及び半導体装置の製造方法
JP2002025953A (ja) * 2000-06-30 2002-01-25 Jsr Corp 化学機械研磨用水系分散体
JP2002184734A (ja) * 2000-12-19 2002-06-28 Tokuyama Corp 半導体装置の製造方法
JP2002523327A (ja) * 1998-08-19 2002-07-30 ナノグラム・コーポレーション 酸化アルミニウム粒子
JP2003510802A (ja) * 1999-09-23 2003-03-18 ロデール ホールディングス インコーポレイテッド 銅又はタングステンの研磨用スラリー溶液

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6290735B1 (en) * 1997-10-31 2001-09-18 Nanogram Corporation Abrasive particles for surface polishing
US6142855A (en) * 1997-10-31 2000-11-07 Canon Kabushiki Kaisha Polishing apparatus and polishing method
JP4273475B2 (ja) * 1999-09-21 2009-06-03 株式会社フジミインコーポレーテッド 研磨用組成物
US6348076B1 (en) * 1999-10-08 2002-02-19 International Business Machines Corporation Slurry for mechanical polishing (CMP) of metals and use thereof
WO2001032799A1 (fr) * 1999-11-04 2001-05-10 Nanogram Corporation Dispersions de particules
US6569222B2 (en) * 2000-06-09 2003-05-27 Harper International Corporation Continuous single stage process for the production of molybdenum metal
JP3837277B2 (ja) * 2000-06-30 2006-10-25 株式会社東芝 銅の研磨に用いる化学機械研磨用水系分散体及び化学機械研磨方法

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6330321A (ja) * 1986-07-19 1988-02-09 Tokyo Tungsten Co Ltd 二酸化モリブデン粉末及びその製造方法
JP2000158331A (ja) * 1997-12-10 2000-06-13 Canon Inc 基板の精密研磨方法および装置
JPH11204474A (ja) * 1998-01-09 1999-07-30 Sony Corp フッ素を含む膜の研磨方法
JP2002523327A (ja) * 1998-08-19 2002-07-30 ナノグラム・コーポレーション 酸化アルミニウム粒子
JP2000108004A (ja) * 1998-10-07 2000-04-18 Canon Inc 研磨装置
JP2003510802A (ja) * 1999-09-23 2003-03-18 ロデール ホールディングス インコーポレイテッド 銅又はタングステンの研磨用スラリー溶液
JP2001189295A (ja) * 1999-12-28 2001-07-10 Nec Corp 金属配線形成方法
JP2001342454A (ja) * 2000-06-01 2001-12-14 Hitachi Ltd 研磨剤、研磨方法及び半導体装置の製造方法
JP2002025953A (ja) * 2000-06-30 2002-01-25 Jsr Corp 化学機械研磨用水系分散体
JP2002184734A (ja) * 2000-12-19 2002-06-28 Tokuyama Corp 半導体装置の製造方法
JP2001237202A (ja) * 2000-12-25 2001-08-31 Nec Corp 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011523207A (ja) * 2008-05-23 2011-08-04 キャボット マイクロエレクトロニクス コーポレイション 安定な高濃度ケイ素スラリー

Also Published As

Publication number Publication date
WO2005012451A3 (fr) 2006-05-18
EP1648974A2 (fr) 2006-04-26
EP1648974A4 (fr) 2008-04-23
KR20060118396A (ko) 2006-11-23
WO2005012451A2 (fr) 2005-02-10

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