WO2005012451A3 - Suspensions aqueuses et procedes pour la planarisation chimico-mecanique du cuivre - Google Patents

Suspensions aqueuses et procedes pour la planarisation chimico-mecanique du cuivre Download PDF

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Publication number
WO2005012451A3
WO2005012451A3 PCT/US2004/024143 US2004024143W WO2005012451A3 WO 2005012451 A3 WO2005012451 A3 WO 2005012451A3 US 2004024143 W US2004024143 W US 2004024143W WO 2005012451 A3 WO2005012451 A3 WO 2005012451A3
Authority
WO
WIPO (PCT)
Prior art keywords
copper
chemical
mechanical planarization
slurries
methods
Prior art date
Application number
PCT/US2004/024143
Other languages
English (en)
Other versions
WO2005012451A2 (fr
Inventor
Suryadevara V Babu
Sharath Hegde
Sunil Jha
Udaya B Patri
Youngki Hong
Original Assignee
Climax Engineered Mat Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/631,698 external-priority patent/US20050022456A1/en
Application filed by Climax Engineered Mat Llc filed Critical Climax Engineered Mat Llc
Priority to JP2006521994A priority Critical patent/JP2007500943A/ja
Priority to EP04779276A priority patent/EP1648974A4/fr
Publication of WO2005012451A2 publication Critical patent/WO2005012451A2/fr
Publication of WO2005012451A3 publication Critical patent/WO2005012451A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

Cette invention concerne une nouvelle suspension aqueuse pour la planarisation chimico-mécanique apte au polissage du cuivre à des vitesses de polissage élevées. Cette suspension aqueuse comprend des particules de MoO2 ou MoO3 et un agent d'oxydation. Un procédé de polissage du cuivre par planarisation chimico-mécanique consiste à mettre le cuivre en contact avec un tampon de polissage et une suspension aqueuse comprenant des particules de MoO2 ou MoO3 et un agent d'oxydation.
PCT/US2004/024143 2003-07-30 2004-07-27 Suspensions aqueuses et procedes pour la planarisation chimico-mecanique du cuivre WO2005012451A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006521994A JP2007500943A (ja) 2003-07-30 2004-07-27 銅を化学的機械的に平滑化するためのスラリーおよび方法
EP04779276A EP1648974A4 (fr) 2003-07-30 2004-07-27 Suspensions aqueuses et procedes pour la planarisation chimico-mecanique du cuivre

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/631,698 US20050022456A1 (en) 2003-07-30 2003-07-30 Polishing slurry and method for chemical-mechanical polishing of copper
US10/631,698 2003-07-30
US10/846,718 US20050026444A1 (en) 2003-07-30 2004-05-13 Slurry and method for chemical-mechanical planarization of copper
US10/846,718 2004-05-13

Publications (2)

Publication Number Publication Date
WO2005012451A2 WO2005012451A2 (fr) 2005-02-10
WO2005012451A3 true WO2005012451A3 (fr) 2006-05-18

Family

ID=34119220

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/024143 WO2005012451A2 (fr) 2003-07-30 2004-07-27 Suspensions aqueuses et procedes pour la planarisation chimico-mecanique du cuivre

Country Status (4)

Country Link
EP (1) EP1648974A4 (fr)
JP (1) JP2007500943A (fr)
KR (1) KR20060118396A (fr)
WO (1) WO2005012451A2 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7186653B2 (en) * 2003-07-30 2007-03-06 Climax Engineered Materials, Llc Polishing slurries and methods for chemical mechanical polishing
US8017524B2 (en) * 2008-05-23 2011-09-13 Cabot Microelectronics Corporation Stable, high rate silicon slurry

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6348076B1 (en) * 1999-10-08 2002-02-19 International Business Machines Corporation Slurry for mechanical polishing (CMP) of metals and use thereof
US6423125B1 (en) * 1999-09-21 2002-07-23 Fujimi Incorporated Polishing composition
US6471930B2 (en) * 1997-10-31 2002-10-29 Nanogram Corporation Silicon oxide particles
US6569222B2 (en) * 2000-06-09 2003-05-27 Harper International Corporation Continuous single stage process for the production of molybdenum metal

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6330321A (ja) * 1986-07-19 1988-02-09 Tokyo Tungsten Co Ltd 二酸化モリブデン粉末及びその製造方法
US20090255189A1 (en) * 1998-08-19 2009-10-15 Nanogram Corporation Aluminum oxide particles
US6142855A (en) * 1997-10-31 2000-11-07 Canon Kabushiki Kaisha Polishing apparatus and polishing method
JP2000158331A (ja) * 1997-12-10 2000-06-13 Canon Inc 基板の精密研磨方法および装置
JPH11204474A (ja) * 1998-01-09 1999-07-30 Sony Corp フッ素を含む膜の研磨方法
JP2000108004A (ja) * 1998-10-07 2000-04-18 Canon Inc 研磨装置
JP2003510802A (ja) * 1999-09-23 2003-03-18 ロデール ホールディングス インコーポレイテッド 銅又はタングステンの研磨用スラリー溶液
WO2001032799A1 (fr) * 1999-11-04 2001-05-10 Nanogram Corporation Dispersions de particules
JP3490038B2 (ja) * 1999-12-28 2004-01-26 Ｎｅｃエレクトロニクス株式会社 金属配線形成方法
JP3945964B2 (ja) * 2000-06-01 2007-07-18 株式会社ルネサステクノロジ 研磨剤、研磨方法及び半導体装置の製造方法
JP3837277B2 (ja) * 2000-06-30 2006-10-25 株式会社東芝 銅の研磨に用いる化学機械研磨用水系分散体及び化学機械研磨方法
JP4743941B2 (ja) * 2000-06-30 2011-08-10 Ｊｓｒ株式会社 化学機械研磨用水系分散体
JP2002184734A (ja) * 2000-12-19 2002-06-28 Tokuyama Corp 半導体装置の製造方法
JP3507794B2 (ja) * 2000-12-25 2004-03-15 日本電気株式会社 半導体装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6471930B2 (en) * 1997-10-31 2002-10-29 Nanogram Corporation Silicon oxide particles
US6423125B1 (en) * 1999-09-21 2002-07-23 Fujimi Incorporated Polishing composition
US6348076B1 (en) * 1999-10-08 2002-02-19 International Business Machines Corporation Slurry for mechanical polishing (CMP) of metals and use thereof
US6569222B2 (en) * 2000-06-09 2003-05-27 Harper International Corporation Continuous single stage process for the production of molybdenum metal

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1648974A4 *

Also Published As

Publication number Publication date
EP1648974A4 (fr) 2008-04-23
EP1648974A2 (fr) 2006-04-26
KR20060118396A (ko) 2006-11-23
JP2007500943A (ja) 2007-01-18
WO2005012451A2 (fr) 2005-02-10

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