JP2007500443A5 - - Google Patents

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Publication number
JP2007500443A5
JP2007500443A5 JP2006521869A JP2006521869A JP2007500443A5 JP 2007500443 A5 JP2007500443 A5 JP 2007500443A5 JP 2006521869 A JP2006521869 A JP 2006521869A JP 2006521869 A JP2006521869 A JP 2006521869A JP 2007500443 A5 JP2007500443 A5 JP 2007500443A5
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JP
Japan
Prior art keywords
layer
forming
arc
organic
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006521869A
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English (en)
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JP4677407B2 (ja
JP2007500443A (ja
Filing date
Publication date
Priority claimed from US10/628,668 external-priority patent/US6972255B2/en
Application filed filed Critical
Publication of JP2007500443A publication Critical patent/JP2007500443A/ja
Publication of JP2007500443A5 publication Critical patent/JP2007500443A5/ja
Application granted granted Critical
Publication of JP4677407B2 publication Critical patent/JP4677407B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Claims (5)

  1. 半導体装置を製造する方法であって、
    半導体基板を提供するステップと、
    前記半導体基板上に絶縁層を形成するステップと、
    前記絶縁層上に導電層を形成するステップと、
    前記導電層上に有機反射防止膜（ＡＲＣ）層を形成するステップと、
    前記有機反射防止膜層上にオルトケイ酸テトラエチル（ＴＥＯＳ）層を成膜するステップと、
    前記ＴＥＯＳ層上にフォトレジスト層を成膜するステップと、
    前記フォトレジスト層をパターニングして、パターニングフォトレジスト構造体を形成するステップと、
    を備える方法。
  2. 請求項１記載の方法において、
    前記有機ＡＲＣ層は非晶質炭素を含む方法。
  3. 請求項１記載の方法において、
    前記有機ＡＲＣ層を約３０〜７０ｎｍの厚さに成膜する方法。
  4. 半導体基板と、
    前記半導体基板上に形成された絶縁層と、
    前記絶縁層上に形成された導電層と、
    前記導電層上に形成された有機反射防止膜（ＡＲＣ）層と、
    前記有機（ＡＲＣ）層上に形成されたオルトケイ酸テトラエチル（ＴＥＯＳ）層と、
    前記ＴＥＯＳ層上に形成されたパターニングフォトレジスト層と、
    を備える半導体装置。
  5. 半導体装置を製造する方法であって、
    半導体基板を提供するステップと、
    前記半導体基板上に絶縁層を形成するステップと、
    前記絶縁層上に導電層を形成するステップと、
    前記導電層上に有機反射防止膜（ＡＲＣ）層を形成するステップと、
    前記有機ＡＲＣ層上に有機シラン系前駆体を用いて酸化ケイ素キャップ層を成膜するステップと、
    前記フォトレジスト層をパターニングして、パターニングフォトレジスト構造体を形成するステップと、
    を備える方法。
JP2006521869A 2003-07-28 2004-07-13 有機反射防止膜（ａｒｃ）を有する半導体装置の製造方法 Expired - Lifetime JP4677407B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/628,668 US6972255B2 (en) 2003-07-28 2003-07-28 Semiconductor device having an organic anti-reflective coating (ARC) and method therefor
PCT/US2004/022434 WO2005013320A2 (en) 2003-07-28 2004-07-13 A semiconductor device having an organic anti-reflective coating (arc) and method therefor

Publications (3)

Publication Number Publication Date
JP2007500443A JP2007500443A (ja) 2007-01-11
JP2007500443A5 true JP2007500443A5 (ja) 2007-08-23
JP4677407B2 JP4677407B2 (ja) 2011-04-27

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006521869A Expired - Lifetime JP4677407B2 (ja) 2003-07-28 2004-07-13 有機反射防止膜（ａｒｃ）を有する半導体装置の製造方法

Country Status (7)

Country Link
US (3) US6972255B2 (ja)
EP (1) EP1652225A4 (ja)
JP (1) JP4677407B2 (ja)
KR (1) KR101164690B1 (ja)
CN (1) CN100461350C (ja)
TW (1) TWI348777B (ja)
WO (1) WO2005013320A2 (ja)

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