JP2007500443A5 - - Google Patents
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- Publication number
- JP2007500443A5 JP2007500443A5 JP2006521869A JP2006521869A JP2007500443A5 JP 2007500443 A5 JP2007500443 A5 JP 2007500443A5 JP 2006521869 A JP2006521869 A JP 2006521869A JP 2006521869 A JP2006521869 A JP 2006521869A JP 2007500443 A5 JP2007500443 A5 JP 2007500443A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- forming
- arc
- organic
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims 29
- 239000006117 anti-reflective coating Substances 0.000 claims 11
- 239000004065 semiconductor Substances 0.000 claims 9
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims 6
- 229920002120 photoresistant polymer Polymers 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- 238000000151 deposition Methods 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000000059 patterning Methods 0.000 claims 2
- 229910003481 amorphous carbon Inorganic materials 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 150000001282 organosilanes Chemical class 0.000 claims 1
- OZAIFHULBGXAKX-UHFFFAOYSA-N precursor Substances N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
Claims (5)
- 半導体装置を製造する方法であって、
半導体基板を提供するステップと、
前記半導体基板上に絶縁層を形成するステップと、
前記絶縁層上に導電層を形成するステップと、
前記導電層上に有機反射防止膜(ARC)層を形成するステップと、
前記有機反射防止膜層上にオルトケイ酸テトラエチル(TEOS)層を成膜するステップと、
前記TEOS層上にフォトレジスト層を成膜するステップと、
前記フォトレジスト層をパターニングして、パターニングフォトレジスト構造体を形成するステップと、
を備える方法。 - 請求項1記載の方法において、
前記有機ARC層は非晶質炭素を含む方法。 - 請求項1記載の方法において、
前記有機ARC層を約30〜70nmの厚さに成膜する方法。 - 半導体基板と、
前記半導体基板上に形成された絶縁層と、
前記絶縁層上に形成された導電層と、
前記導電層上に形成された有機反射防止膜(ARC)層と、
前記有機(ARC)層上に形成されたオルトケイ酸テトラエチル(TEOS)層と、
前記TEOS層上に形成されたパターニングフォトレジスト層と、
を備える半導体装置。 - 半導体装置を製造する方法であって、
半導体基板を提供するステップと、
前記半導体基板上に絶縁層を形成するステップと、
前記絶縁層上に導電層を形成するステップと、
前記導電層上に有機反射防止膜(ARC)層を形成するステップと、
前記有機ARC層上に有機シラン系前駆体を用いて酸化ケイ素キャップ層を成膜するステップと、
前記フォトレジスト層をパターニングして、パターニングフォトレジスト構造体を形成するステップと、
を備える方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/628,668 US6972255B2 (en) | 2003-07-28 | 2003-07-28 | Semiconductor device having an organic anti-reflective coating (ARC) and method therefor |
PCT/US2004/022434 WO2005013320A2 (en) | 2003-07-28 | 2004-07-13 | A semiconductor device having an organic anti-reflective coating (arc) and method therefor |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007500443A JP2007500443A (ja) | 2007-01-11 |
JP2007500443A5 true JP2007500443A5 (ja) | 2007-08-23 |
JP4677407B2 JP4677407B2 (ja) | 2011-04-27 |
Family
ID=34103421
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006521869A Expired - Lifetime JP4677407B2 (ja) | 2003-07-28 | 2004-07-13 | 有機反射防止膜(arc)を有する半導体装置の製造方法 |
Country Status (7)
Country | Link |
---|---|
US (3) | US6972255B2 (ja) |
EP (1) | EP1652225A4 (ja) |
JP (1) | JP4677407B2 (ja) |
KR (1) | KR101164690B1 (ja) |
CN (1) | CN100461350C (ja) |
TW (1) | TWI348777B (ja) |
WO (1) | WO2005013320A2 (ja) |
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CN102867742B (zh) * | 2012-09-17 | 2015-06-24 | 上海华力微电子有限公司 | 一种消除形貌变形的等离子刻蚀方法 |
US9640430B2 (en) | 2015-09-17 | 2017-05-02 | Nxp Usa, Inc. | Semiconductor device with graphene encapsulated metal and method therefor |
US10297445B2 (en) | 2016-06-14 | 2019-05-21 | QROMIS, Inc. | Engineered substrate structure for power and RF applications |
US10510582B2 (en) | 2016-06-14 | 2019-12-17 | QROMIS, Inc. | Engineered substrate structure |
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-
2003
- 2003-07-28 US US10/628,668 patent/US6972255B2/en not_active Expired - Lifetime
-
2004
- 2004-07-13 WO PCT/US2004/022434 patent/WO2005013320A2/en active Application Filing
- 2004-07-13 EP EP04778107A patent/EP1652225A4/en not_active Withdrawn
- 2004-07-13 KR KR1020067001728A patent/KR101164690B1/ko active IP Right Grant
- 2004-07-13 JP JP2006521869A patent/JP4677407B2/ja not_active Expired - Lifetime
- 2004-07-13 CN CNB2004800173895A patent/CN100461350C/zh not_active Expired - Lifetime
- 2004-07-19 TW TW093121522A patent/TWI348777B/zh active
-
2005
- 2005-04-06 US US11/100,163 patent/US7199429B2/en not_active Expired - Lifetime
-
2007
- 2007-02-16 US US11/676,100 patent/US8039389B2/en active Active
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